铁氧体表面Cr/Ni/Ag复合薄膜制备及性能研究

目的利用真空镀膜技术对铁氧体电磁感芯表面进行金属化处理,对金属薄膜的结构及性能进行综合分析,为其实现工程应用提供一定的理论基础。方法采用多腔一体式磁控溅射设备在铁氧体磁体表面依次沉积Cr、Ni、Ag,作为铁氧体表面复合金属薄膜。采用扫描电镜对复合薄膜表面、截面形貌进行表征;利用原子力显微镜对复合薄膜表面粗糙度进行测量;利用划格法对复合薄膜附着力进行测试;利用冲压试验对复合薄膜剥离强度进行测试;利用拉伸试验对复合薄膜结合强度进行测试;利用浸锡试验对复合薄膜耐焊性进行测试。结果试验制备的Cr/Ni/Ag复合薄膜各层厚度分别为420、4200、550 nm,Cr层与Ni层有明显柱状晶结构,层间界面清晰、无明显孔隙,Ag层与Ni层紧密结合。复合薄膜表面粗糙度为13 nm,附着力达0B级,结合力为30 N,抗拉强度达42 MPa。复合薄膜经过450℃浸锡18 s后,表面金属薄膜无脱焊或露底。结论采用磁控溅射技术制备的Cr(420 nm)/Ni(4200 nm)/Ag(550 nm)复合金属薄膜结构致密均匀,综合性能优异,达到铁氧体电感磁芯表面金属薄膜技术要求。     

橡胶表面粗糙度对DLC薄膜摩擦学性能的影响

目的 探究三元乙丙橡胶(EPDM)表面粗糙度对DLC薄膜和Cr/DLC的微观结构、附着力、摩擦学性能的影响,并阐明Cr中间层对橡胶表面DLC薄膜的作用。方法 使用砂纸打磨EPDM橡胶得到不同的表面粗糙度。采用非平衡磁控溅射技术在不同粗糙度的橡胶基体表面沉积无中间层的类金刚石碳基薄膜(DLC)及有Cr中间层的类金刚石碳基薄膜(Cr/DLC)。使用二维轮廓仪获得基体及薄膜的表面粗糙度,通过扫描电子显微镜以及拉曼光谱对薄膜的表面形貌和结构成分进行分析,并采用X切割试验和摩擦磨损试验分别评估DLC薄膜的附着力和摩擦学性能。结果 基体表面粗糙度对薄膜的微观结构没有显著影响,但却对薄膜附着力以及摩擦学性能有较大的影响。薄膜附着力随着基体粗糙度的增加呈现先增大后减小的趋势,当基体表面粗糙度为1 100 nm时,DLC薄膜具有最强的附着力和最佳的摩擦学性能。此外,Cr中间层的引入对提高薄膜附着力和承载能力起到了积极的作用。结论 适当增加基体表面粗糙度可以增强DLC薄膜的附着力,改善薄膜的摩擦学性能。Cr中间层可以提高薄膜的承载能力,从而提高薄膜的耐磨性。     

磁控溅射技术制备二氧化钛薄膜研究进展

磁控溅射技术具有溅射速率高、膜基结合力好、易实现工业化生产等技术优势,在二氧化钛薄膜制备方面具有显著优势,但磁控溅射参数对二氧化钛薄膜结构和性能的影响显著,如何通过控制和优化磁控溅射参数,获得高性能二氧化钛薄膜已成为目前的研究热点。概述了不同晶型二氧化钛的结构特点、物理性质和磁控溅射制备二氧化钛薄膜的工作原理,指出成膜过程中的溅射功率、溅射气压、溅射时间、沉积温度和氧分压等是影响薄膜结构和性能的主要因素,并详细阐述了上述五种工艺参数对二氧化钛薄膜沉积速率、膜层厚度、表面粗糙度、相组成和光催化性能等的影响规律和作用机制。此外,还对其他影响薄膜结构和性能的关键因素及影响规律进行了介绍,包括退火温度对膜层组织转变影响的规律,金属元素掺杂和非金属元素掺杂对膜层形貌和性能的影响,以及不同溅射靶材特点及其对成膜过程的影响。最后提出未来磁控溅射技术制备二氧化钛薄膜的研究难点,并对二氧化钛薄膜的下一步研究方向进行了展望。     

电子束蒸发与磁控溅射制备AI／PI复合薄膜的性能研究

利用磁控溅射法和电子束蒸发法在聚酰亚胺（PI）薄膜基底上沉积了铝功能膜。测试了两种方法薄膜的膜厚、附着力、反射率、折射率和电导率。结果表明,磁控溅射法制备的铝膜的综合性能较电子束蒸制备的铝膜的性能优越。     

电子束蒸发与磁控溅射制备Al/PI复合薄膜的性能研究

利用磁控溅射法和电子束蒸发法在聚酰亚胺（PI）薄膜基底上沉积了铝功能膜。测试了两种方法薄膜的膜厚、附着力、反射率、折射率和电导率。结果表明,磁控溅射法制备的铝膜的综合性能较电子束蒸制备的铝膜的性能优越。     

磁控溅射温度与时间对ZrN薄膜附着力的影响

采用非平衡磁控溅射技术在1Cr18Ni9Ti不锈钢上制备了ZrN薄膜。用SEM、EDS观察并分析了薄膜的表面形貌和成分,用光电轮廓仪测量了膜层厚度。并采用划格法测试不同溅射时间和温度制备的薄膜附着力大小。分析不同溅射时间和温度对薄膜附着力的影响规律。结果表明,通过调节磁控溅射时间和温度可以得到具有一定厚度,成分稳定,结构致密的ZrN薄膜,且溅射时间在1～20 min范围内时间越长薄膜附着力越大,溅射时间超过20 min,附着力趋于稳定;溅射温度在30～90℃范围内温度越高薄膜附着力越大,超过90℃溅射温度继续升高附着力减小。     

高功率脉冲磁控溅射管内壁沉积Cr薄膜结构及性能

由于管腔空间限制,物理气相沉积领域中管内壁沉积薄膜的均匀性和质量有待研究和改善。采用高功率脉冲磁控溅射技术(HiPIMS)在直径 40 mm、长度 120 mm 的 20 #碳钢管内表面进行 Cr 薄膜沉积,并探究管内不同位置沉积 Cr 薄膜的结构和力学性能。采用 SEM 分析薄膜的截面形貌和厚度变化,采用 AFM 分析薄膜的表面形貌和表面粗糙度变化,采用 XRD 分析薄膜的晶相结构和晶粒尺寸,采用球-盘式旋转摩擦磨损试验机对薄膜的耐摩擦磨损性能进行测试。结果表明,随着管内深度的增加,距管口距离为 15 mm(位置 1)、45 mm(位置 2)、75 mm(位置 3)和 105 mm(位置 4)位置的膜层厚度分别为 1 690 nm、827 nm、210 nm 和 0 nm。从位置 1 到位置 3,所沉积的 Cr 薄膜表面粗糙度由 12.6 nm 下降到 4.8 nm,晶粒尺寸由 15 nm 增加到 38 nm,摩擦因数由 0.68 上升到 0.89。     

基于硅靶和碳化硅靶的碳化硅薄膜磁控溅射工艺对比

目的 通过基于碳化硅陶瓷靶的直接溅射和基于硅靶与甲烷的反应溅射,在Si(100)基底上沉积碳化硅薄膜,对比两种工艺制备碳化硅薄膜的异同.方法 采用直接磁控溅射与反应磁控溅射工艺制备碳化硅薄膜,通过白光干涉仪、轮廓仪、X光电子能谱仪(XPS)分析薄膜粗糙度、厚度、沉积速率、组分,通过X射线衍射仪和扫描电子显微镜分析薄膜的物相结构和形貌.结果 基于硅靶和甲烷的反应溅射工艺,甲烷流量百分比为20％～70％时,沉积速率从11.3 nm/min升高到36.5 nm/min.甲烷流量百分比为20％～60％时,表面粗糙度Rq值变化不大;甲烷流量百分比为70％时,Rq值有增大的趋势.对于甲烷反应溅射工艺,硅碳元素比例可调,但甲烷气体不易控制.基于碳化硅陶瓷靶工艺,随沉积时间(即膜层沉积厚度)的增加,表面粗糙度Rq变化不大,硅碳原子比接近1:1.两种工艺制备的薄膜均为晶态,且为8H-SiC.结论 比较两种工艺,相同靶功率下,硅靶反应溅射的沉积速率明显快于碳化硅陶瓷靶.硅靶反应溅射的元素比例可调,但甲烷气体不易控制;碳化硅陶瓷靶的沉积过程稳定,硅碳原子比接近1:1.     

热处理对氧化铝陶瓷表面铜膜性能的影响

采用射频磁控溅射方法在Al2O3陶瓷基底上淀积厚度为500 nm的Cu膜,并将其于真空热处理炉中采用30℃/min和5℃/min两个升温速率升温至400℃退火处理2h,研究了退火升温速度对铜膜表面形貌、电阻率及附着力的影响.结果表明:退火热处理使Cu薄膜表面粗糙度增加,铜膜电阻率降低,膜-基结合力增强.且30℃/min快速升温较5℃/min缓慢升温退火热处理,Cu薄膜表面粗糙度低,Cu薄膜表面电阻率低,膜-基结合力差.利用自由电子气理论和扩散理论对退火热处理过程引起的性能变化进行了分析解释.     

磁控溅射法制备TiN/TiO2周期薄膜

采用直流反应磁控溅射法在Si(111)衬底上制备了不同周期数的TiN/TiO2周期薄膜。采用X射线衍射分析仪分析了薄膜的物相结构、原子力显微镜表征了薄膜的表面微观形貌,采用光催化降解甲基橙溶液来评价薄膜光催化性能。结果表明:所制备的TiN/TiO2周期薄膜结晶良好,薄膜由TiO2和TiN两种物相组成,TiO2均属于锐钛矿型。薄膜表面均匀致密,随着周期数的增加,薄膜表面粗糙度增加,1周期薄膜表面粗糙度(Ra)为1.652nm,5周期则为4.339nm,1周期薄膜均方根粗糙度(Rms)为2.138nm,5周期达5.738nm。薄膜具有显著的光催化性能,随着周期数的增加,TiN/TiO2薄膜的光催化性能逐渐增强,5周期薄膜对甲基橙溶液的降解率达到74%。结晶良好、表面均匀致密的具有光催化性能的TiN/TiO2周期薄膜的制备,为高质量TiN/TiO2周期薄膜的制备提供了参考。     

基于原子层沉积的Al_2O_3薄膜微观形貌研究

研究利用原子层沉积获得的小于10 nm Al_2O_3薄膜表面形貌特点。采用该技术获得4和8 nm的Al_2O_3薄膜,利用原子力扫描电镜(AFM)和扫描电镜(SEM)对薄膜表面形貌进行测量,通过最小二乘法和多重分形研究薄膜表面形貌,分析得出利用原子层沉积技术加工超薄Al_2O_3薄膜,其形貌与成膜原理有关,与厚度无关。     

钛合金表面大气压等离子体枪制备类金刚石薄膜

在大气下,采用大气压介质阻挡放电(DBD)等离子体枪在低温下(350℃),以甲烷为单体,氩气为工作气体,在Ti6Al4V钛合金表面制备一层类金刚石薄膜(DLC),以期改善钛合金表面摩擦学性能。利用激光拉曼(Raman)光谱和X射线光电子能谱(XPS)分析了所制备DLC薄膜的结构;利用扫描电子显微镜(SEM)观察DLC薄膜的表面形貌;利用划痕仪测量了DLC薄膜与基体的结合力;利用球-盘摩擦磨损实验仪对DLC薄膜的耐磨性能进行了研究。结果表明:在本实验工艺条件下沉积的类金刚石薄膜厚度约为1.0μm,薄膜均匀且致密,表面粗糙度Ra为13.23nm。类金刚石薄膜与基体结合力的临界载荷达到31.0N。DLC薄膜具有优良的减摩性,Ti6Al4V表面沉积DLC薄膜后摩擦系数为0.15,较Ti6Al4V基体的摩擦系数0.50明显减小,耐磨性能得到提高。     

磁控溅射ZrN薄膜厚度对其色度的影响

采用中频非平衡磁控溅射技术在镜面不锈钢板上制备了ZrN薄膜,通过改变镀膜时间控制ZrN薄膜的厚度。用色差仪测定了不同厚度ZrN薄膜的L*,a*和b*值,绘制出不同厚度ZrN薄膜的L*,a*和b*值的变化曲线图,得出膜层厚度对薄膜色度的影响规律:膜层厚度低于63.7nm时,随着膜层厚度的增加,L*和a*值无变化,b*值呈线性递增,且颜色逐渐趋于金黄色;膜层厚度高于63.7nm时,随着膜层厚度的增加,薄膜颜色坐标未有明显变化,颜色为稳定的金黄色。     

Suppressing the surface roughness and columnar growth of silicon nitride films

The growth and structure evolution of silicon nitride films prepared by radio frequency magnetron sputtering at low pressure were investigated for thickness changes. Grazing-incidence X-ray reflectivity, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy were used to study the structure, surface roughness and composition, respectively, of the films. It was found that with an increase in thickness from 5 to 830 nm, the silicon nitride films have a similar surface structure and their surface roughness only slightly increases. The surface roughness of all the silicon nitride films is only a little more than 0.2 nm, much less than previously reported results. AFM measurement of the fractured film surface indicated that thin silicon nitride films with a thickness below approximately 300 nm have a dense, smooth and uniform structure, and columnar structures gradually appear only in thick films. These results are mainly attributed to the special design of the sputtering system and the energetic particle bombardment of the growing surface, by which the surface roughness and columnar growth were suppressed.     

Ta12W合金表面离子束沉积薄膜与U-Nb合金之间的摩擦性能

采用离子束沉积方法在Ta12W合金表面制备了Sn,In软金属薄膜,Al2O3陶瓷薄膜和In/Al2O3复合薄膜.利用销盘摩擦磨损试验机并结合SEM观察分析了对偶销为U-Nb合金时,试样的摩擦学性能并讨论了摩擦磨损机理.当用SiC对偶进行评价时,Sn,In软金属薄膜降低了Ta12W合金摩擦系数.然而当对偶销改为工程状态的U-Nb合金时,由于用离子束溅射沉积法制备的Sn薄膜太薄、In薄膜与U-Nb合金发生粘着,Sn,In软金属薄膜与In/Al2O3复合薄膜均未降低Ta12W合金的的摩擦系数.当Sn薄膜增加到一定厚度时,摩擦性能得到明显改善.Al2O3陶瓷薄膜与U-Nb合金对偶销摩擦时,与Ta12W合金表面直接摩擦结果一样,由于U-Nb合金容易被磨损而使磨屑转移到试样表面,摩擦系数没有下降.     

Surface morphology and photoluminescence properties of ZnO thin films obtained by PLD

ZnO thin films on Si(111) substrate were deposited by laser ablation of Zn target in oxygen reactive atmosphere, Nd-YAG laser with wavelength of 1 064 nm was used as laser source. XRD and FESEM microscopy were applied to characterize the structure and surface morphology of the deposited ZnO films. The optical properties of the ZnO thin films were characterized by photoluminescence. The UV and deep level (yellow-green) light were observed from the films. The UV light is the intrinsic property and deep level light is attributed to the existence of antisite defects (Ozn). The intensity of UV and deep level light depends strongly on the surface morphology and is explained by the surface roughness of ZnO film. A strongly UV emission can be obtained from ZnO film with surface roughness in nanometer range.     

Effect of Al Film on the Electromagnetic Properties of Glass Fiber Reinforced Resin Matrix CompositeEI北大核心CSCD

Metallic thin films have many properties that bulk metals do not possess, such as high impedance. Recently, increasing attention has been paid to high impedance surface in the design of antennas and absorbers. Metallic thin films used in composite materials can realize the perfect matching of electromagnetic wave in different materials. The use of metallic thin films in electromagnetic functional materials results in significant increase of the absorbing intensity and operating bandwidth. But it usually needs to pay a huge amount of manpower, material resources and a longer period of time to design excellent electromagnetic functional materials with metallic films. So it is greatly significant to understand clearly the electromagnetic influence of metallic film for designing excellent performance materials and saving costs by simulation software. Al film is a typical non-magnetic metal film. In this work, the electromagnetic reflectivity of Al films and glass fiber reinforced resin matrix composite had been studied. High frequency electromagnetic field calculation software FEKO was employed to calculate the reflection coefficient of the composites. The effect of composites' real part of permittivity epsilon(r), dielectric loss tangent tan delta(epsilon), permeability mu(r) and magnetic loss tangent tan delta(mu) on microwave reflectivity had been discussed. The equivalent electromagnetic parameters of glass fiber reinforced resin matrix composite had been obtained through a comparison between simulation and experimental results. Due to resonance phenomena of the embedded Al film in the glass fiber reinforced resin matrix composite with certain thickness, there is an optimum resistance value of Al film that makes the composite structure have minimum reflection. Through the calculation of Al film and glass fiber reinforced resin matrix composite with different structure, the thickness relationship between Al films in calculation and Al films prepared by magnetron sputtering had been obtained. According to the theory of transmission line, the resistance of resonance is analyzed by MATLAB. This method is also applicable to the resistance solution of the homogeneous metal films at any position in the composite or frequency selective surfaces. The equivalent electromagnetic parameters of Al film and glass fiber reinforced resin matrix composite in simulation had been ascertained, and the simulation results agree well with the experimental results.     

SUBSTRATE EFFECT ON HYDROGENATED MICROCRYSTALLINE SILICON FILMS DEPOSITED WITH VHF-PECVD TECHNIQUE

Raman spectra and scanning electron microscope （SEM） techniques were used to determine the structural properties of microcrb＇stalline silicon （μc-Si：H） films deposited on different substrates with the very high frequency plasma-enhanced chemical vapor deposition （VHF-PECVD） technique. Using the Raman spectra, the values of crystalline volume fraction Xc and average grain size d are 86%, 12.3nm; 65%, 5.45nm; and 38%, 4.05nm, for single crystalline silicon wafer, coming 7059 glass, and general optical glass substrates, respectively. The SEM images further demonstrate the substrate effect on the film surface roughness. For the single crystalline silicon wafer and Coming 7059 glass, the surfaces of the μc-Si：H films are fairly smooth because of the homogenous growth or h＇ttle lattice mismatch. But for general optical glass, the surface of the μ-Si： H film is very rough, thus the growing surface roughness affects the crystallization process and determines the average grain size of the deposited material. Moreover, with the measurements of thickness, photo and dark conductivity, photosensitivity and activation energy, the substrate effect on the deposition rate, optical and electrical properties of the μc-Si：H thin films have also been investigated. On the basis of the above results, it can be concluded that the substrates affect the initial growing layers acting as a seed for the formation of a crystalline-like material and then the deposition rates, optical and electrical properties are also strongly influenced, hence, deposition parameter optimization is the key method that can be used to obtain a good initial growing layer, to realize the deposition of μc-Si：H films with device-grade quality on cheap substrates such as general glass.     

脉冲激光能量密度对Mo薄膜生长的影响

用脉冲激光沉积(PLD)法在Si(100)基片上制备金属Mo薄膜,研究薄膜结晶性能与能量密度之间的关系,探讨薄膜生长机制和粒子能量在薄膜生长中的作用。原子力显微镜(AFM)图像显示,薄膜表面平整、光滑,均方根粗糙度小于2 nm。X射线衍射(XRD)分析表明,随着能量密度的增加,Mo薄膜衍射峰宽变窄,薄膜从非晶态逐步变为多晶态,晶粒尺寸逐步变大。