石墨烯-氧化锌纳米棒复合材料的超声法制备及其光催化性能

以鳞片石墨为原料,用浓硝酸对其插层后膨胀制备出膨胀石墨,以滚压振动磨预处理的超细微锌粉为锌源,以蒸馏水和无水乙醇作为分散剂,经30kHz的超声波处理8h即得到复合结构良好的石墨烯-氧化锌纳米棒复合光催化剂(ZnO/G),考察了锌粉和膨胀石墨不同比例对复合材料光催化性能的影响。采用X射线衍射仪(XRD)、激光拉曼仪(Raman)、场发射扫描电子显微镜(SEM)、透射电子显微镜(TEM)和紫外-可见光谱分析仪(UV-Vis)等测试手段对复合光催化剂进行表征,结果表明,复合材料中的氧化锌纳米棒呈现出六方晶系纤锌矿结构,并均匀覆盖在石墨烯表面上,其直径大约为20nm。不同比例制得的复合材料对甲基橙的降解效率差别较大,其中锌粉为1.0g时,复合材料的光催化性能明显优于等量的氧化锌纳米棒材料。     

MnO2/NiCo2O4复合材料的控制合成及其电化学性能研究

采用两步合成法制备了MnO_2/NiCo_2O_4核壳结构纳米棒,使用场发射扫描电子显微镜、X射线衍射和电化学工作站研究了其形貌特征和电化学性能。研究结果表明,在α-MnO_2纳米棒上生长了均匀的NiCo_2O_4纳米片,这种核壳结构纳米棒所制备的电极在充放电电流密度为0.5A/g时比电容达到了434F/g,明显比纯α-MnO_2的比电容(256F/g)高,循环测试2 000次后,比电容保留量为91.8%,表现出了优秀的电化学性能,具有广阔的应用前景。     

用于超级电容器的纳米氧化镍/石墨薄片/银复合电极材料的超声法合成及性能

通过简单超声法制备了球状NiO纳米颗粒、NiO/石墨薄片(NiO/GNS)和NiO/GNS/Ag纳米复合材料。在NiO/GNS和NiO/GNS/Ag复合材料中,GNS作为NiO和Ag纳米颗粒分散的模板,不仅有效避免了NiO和Ag纳米颗粒的团聚,还改善了复合材料的电化学性能。采用场发射扫描电子显微镜(SEM)、透射电子显微镜(TEM)和X射线衍射对样品的成分、形貌和结构进行了表征。NiO/GNS/Ag复合材料(GNS质量分数为0.5%,Ag质量分数为3%)电极表现出优异的电化学性能。在1A/g时,其初始比电容为501.66F/g,2000次循环后其比电容衰减为440.45F/g。这表明所制备的复合材料是一种有应用价值的超级电容器电极材料。     

PANI/MnOC生物质碳基电极材料的制备及电化学性能研究

聚苯胺(PANI)在连续充放电后出现结构塌陷,导致其循环稳定性变差的问题。采用原位聚合技术,使苯胺在生物质碳(MnOC)材料表面发生原位聚合,控制PANI颗粒在MnOC表面有序生长,制备的PANI/MnOC复合电极材料同时具备MnOC双电层电容和PANI法拉第赝电容的特征。对材料的分析测试结果表明,PANI/MnOC复合电极材料由微孔、介孔及大孔的多孔网络构成,有利于电荷的存储及传输。由电化学性能测试结果可知,PANI/MnOC复合电极材料相比于PANI,电流密度为1.0 A/g时比电容为385.0 F/g,高于PANI(158.7 F/g)。在2.0 A/g电流密度下,进行5000次连续循环充放电后,复合电极材料的电容保持率达到82.2%。     

α-Fe2O3/炭纳米纤维电极材料的制备及其电化学性能分析

采用电沉积技术将α-Fe₂O₃均匀负载在静电纺丝炭纳米纤维上，制备α-Fe₂O₃/炭纳米纤维复合材料。利用扫描电镜(SEM)、X射线衍射仪(XRD)以及物理吸附对复合材料进行形貌和结构分析，并通过恒电流充放电、循环伏安、交流阻抗技术考察其作为超级电容器电极材料的电化学性能。结果表明：α-Fe₂O₃/炭纳米纤维(α-Fe₂O₃/CNF-3)复合材料相比单纯炭纳米纤维(CNF)有着更丰富的介孔结构，有利于离子和电子的低电阻传输。同时，α-Fe₂O₃/CNF-3复合电极材料结合了双电层电容和赝电容的优良性能，在电流密度为1A/g下，电解液为6mol/L KOH时，其比电容值可达330.1F/g,是炭纳米纤维电极的3.76倍，并且经过8000次循环后仍能保持91.45%,具有较好的稳定性。     

石墨烯/MnO2纳米片复合薄膜的制备及其超级电容性能研究

采用两步界面组装法制备石墨烯/MnO₂纳米片(GMTF)三维复合薄膜电极，研究了复合薄膜的电化学性能。结果表明，MnO₂的赝电容和石墨烯的双电层电容相互协调，使得GMTF复合薄膜材料比单一的MnO₂纳米片或者石墨烯材料具有更佳的电化学性能。在三电极体系中，GMTF电极的比电容在5mV/s时达156.54mF/cm²,远高于石墨烯(40.24mF/cm²)和MnO₂纳米片(69.03mF/cm²)。此外，在两电极体系中，基于GMTF复合薄膜的固态超级电容器也显示出较高的面积比电容(120.49mF/cm²)和质量比电容(204.22F/g)、优良的循环性能。在功率密度为39mW/cm³时，能量密度能够达到1.735mWh/cm³。     

聚3，4-乙烯二氧噻吩/纳米多孔金复合电极的制备及其在超级电容器中的应用

通过一步法将单体3,4-乙烯二氧噻吩(EDOT)电化学聚合到具有高导电率和大比表面积的纳米多孔金(NPG)上,成功制备了具有完美核壳结构的聚3,4-乙烯二氧噻吩/纳米多孔金（PEDOT/NPG）复合电极材料。通过SEM、TEM、Raman和X射线能谱仪对复合电极材料的形貌、微观结构、振动特性和元素组成进行了分析和表征。使用电化学工作站对其电化学性能进行了系统的研究。在三电极体系中,PEDOT/NPG复合电极材料在3 A/g的低电流密度下,质量比电容可以达到555 F/g,其能量密度和功率密度分别为177.58 W·h/kg和1.73 kW/kg。同时该电极材料经过2 000次循环伏安测试后仍然可以保持最大电容的91.5%,电化学性能优异。      

聚苯胺包覆纤维素纳米晶/石墨烯复合电极材料的制备与性能

首先通过原位聚合的方法制备聚苯胺(PANI)包覆纤维素纳米晶(CNC)(CNC@PANI)纳米复合物,进而采用共混法制备CNC@PANI与rGO的复合电极材料(CNC@PANI/rGO)。研究不同苯胺与CNC的用量比对所得复合电极材料的结构形貌和电化学性能的影响。采用扫描电镜、X射线衍射、红外光谱以及电化学工作站等测试手段对制备的复合电极材料的结构形貌、电化学性能进行分析表征。结果表明,PANI成功地包覆在CNC的表面,且PANI通过在CNC表面的包覆,可明显改善其分散性和比表面积,以及与石墨烯的复合效果。CNC@PANI-1/rGO复合电极材料在20mV/s扫描速率下的比电容可高达309F/g,远远高于PANI/rGO复合电极材料的155F/g。     

聚苯胺包覆纤维素纳米晶/石墨烯复合电极材料的制备与性能EI北大核心CSCD

首先通过原位聚合的方法制备聚苯胺(PANI)包覆纤维素纳米晶(CNC)(CNC@PANI)纳米复合物,进而采用共混法制备CNC@PANI与rGO的复合电极材料(CNC@PANI/rGO)。研究不同苯胺与CNC的用量比对所得复合电极材料的结构形貌和电化学性能的影响。采用扫描电镜、X射线衍射、红外光谱以及电化学工作站等测试手段对制备的复合电极材料的结构形貌、电化学性能进行分析表征。结果表明,PANI成功地包覆在CNC的表面,且PANI通过在CNC表面的包覆,可明显改善其分散性和比表面积,以及与石墨烯的复合效果。CNC@PANI-1/rGO复合电极材料在20mV/s扫描速率下的比电容可高达309F/g,远远高于PANI/rGO复合电极材料的155F/g。     

碳纳米管/聚苯胺柔性自支撑复合电极材料的制备及其电化学性能研究

基于原位化学氧化聚合并结合真空辅助成型获得了聚苯胺(PANI)包裹碳纳米管(CNTs)的CNTs/PANI自支撑复合电极，采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)和傅里叶红外光谱测试仪(FT-IR)对CNTs/PANI复合膜的微观形貌和结构进行表征，并利用电化学工作站对其电化学性能进行了测试。实验结果表明，CNTs被PANI颗粒均匀包覆。CNTs/PANI-15(CNTs与An的质量比为1∶15)复合电极的比电容为387F/g(电流密度为0.5A/g),且在3A/g电流密度下连续循环10000圈时，电容保持率为86%。而纯PANI在8000次循环充放电测试后，电容保持率低至66%,且结构几乎坍塌。其原因在所制备的CNTs/PANI复合电极材料兼具PANI的赝电容和CNTs的双电层电容的双重储能机理，通过二者的协同作用显著改善了CNTs/PANI复合膜的电化学性能。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.     

Tc trend in high-Tc superconductors

In our previous works, we have shown that most existing ceramic superconductors can be considered to be built of superconductor-semiconductor composite and we have estimated the change in phonon spectrum of the intrinsic superconductor unit if a semiconductor unit is attached to it. Moreover, the proximity effect under the size quantization condition has been examined in the superconductor-semiconductor composite. Each of the stated effects by itself could causeT _c enhancement in general as more semiconductor blocks are added to the system. We extend our study in this paper to analyze the combined actions of phonon spectral change and proximity effect without size quantization condition onT _c variation in members of the Tl₁ series of high-T _c superconductors. Our results indicate that an optimumT _c is obtained if the stated effects are included in the idealized unit cells of the superconductors made up of a superconductor-semiconductor array.     

Anomalous Hall Effect in Sn1?x?yMnxEuyTe and Sn1?x?yMnxEryTe Mixed Crystals

The Anomalous Hall Effect (AHE) was investigated in IV–VI ferromagnetic semimagnetic semiconductors of Sn_1–x Mn _x Te codoped with either Eu or Er. The analysis of experimental data is as follows. Hall resistivity and magnetization showed that AHE coefficient R _s depends on temperature and its value decreases with thetemperature increase. We observe that above ferromagnet–paramagnet transition temperature R _s changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of R _s , particularly change of the sign.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Magnetic,electrical and thermal studies on the V1−xMox02

The monoclinic-to-tetragonal structure transition of oxides V_1?xMo_x0₂ with $\text{0≤}\text{x}\text{≤0.20}$ has been studied by means of DTA, X-ray diffraction, magnetic susceptibility (powder samples) and electrical conductivity (single crystals) measurements within the temperature region 80 K to 400 K. A linear decrease of the transition temperature of 11 K per atom % Mo was observed. The magnetic susceptibility of the low temperature phase was found to be temperature independent paramagnetic for all preparations. Electrical conductivity measurements on the same phase showed crystals with $\text{x}\text{? 0.04}$ to be semiconducting, while a metallic behavior was observed in the region $\text{0.10 ?}\text{x}\text{? 0.14}$.