内耦合型EBCCD的技术研究

电子轰击电荷耦合器件(EBCCD)是一种微弱光信号成像器件,由于采用了内耦合的背照电荷耦合器件(CCD)结构,大大提高了该器件的探测灵敏度以及信噪比,使其探测的弱光下限能更低.采用国产面照CCD,成功研制出了具有背照功能的CCD以及能耐电子轰击的EBCCD.简单介绍了这种器件的工作原理、结构特点以及关键研究内容,并列出了实验分析及结果.     

红外电荷耦合器件计算机自动测试系统的研究

本文在国内首次提出了统计平均的方式为基础的红外电荷耦合器件计算机自动测试方案,概述了测试系统构成和测试结果分析,介绍了新型红外电荷耦合器件驱动电路的设计。     

电荷耦合器件图像传感器在微光成像系统中的应用

本文在对电荷耦合器件图像传感器的原理特性进行分析的基础上，阐述了电荷耦合器件图像传感器在微光成像系统中的应用，重点讨论了使电荷耦合器件具有微光特性所采取的几种方式，并指出了应用当中应该注意的几个问题及解决的途径。     

电荷耦合器件电离辐射损伤的模拟试验研究

利用钴-60源,在不同工作与辐照条件下,开展电荷耦合器件电离辐射损伤模拟试验,分析高低剂量率、器件偏置对器件暗电流信号增大和哑元电压漂移的影响,比较电荷耦合器件光敏单元、输出放大器总剂量效应的敏感性,研究辐射敏感参数与失效模式的差异.为建立电荷耦合器件电离辐射效应规范化的模拟试验与加固评估方法,提供技术基础.     

电子轰击电荷耦合器件的研制

作者采用多碱光电阴极、静电聚焦的电子透镜系统、背照CCD、高密度引脚的玻封结构以及超高真空处理技术,成功研制出了具有实时电子成像功能的电子轰击电荷耦合器件(Electron Bombarded Charge-CoupledDevice,简称EBCCD)。该器件的主要结构和性能参数为:有效光阴极直径18 mm、光谱响应范围400~850nm、光电阴极灵敏度200μA/lm、CCD像素数512×512、暗信号不均匀性18%。图1为该EBCCD样管实物照片,图2为该样管所输出的图像。图1制成的EBCCD样管的实物照片图2 EBCCD的输出图像电子轰击电荷耦合器件是一种对微弱光信号敏感的成像型…     

基于电荷耦合器件的动目标显示雷达滤波器

电荷耦合器件是一种发展前景良好的金属氧化物半导体集成电路.该电路广泛应用于彩色成像、信号处理等相关领域.文中给出了动目标显示雷达杂波滤波器的设计依据以及CCD321型电荷耦合器件的性能和使用方法,还介绍了基于该种型号的电荷藕合器件设计和实现的杂波滤波器电路.其日的是探讨和研究电倚耦合器件在雷达信号处理中的应用.实践证明,用该器件设计的杂波滤波器能有效地滤除地物回波及消极干扰,提高雷达对运动目标的检测能力,杂波对消比可达30 dB.     

电荷耦合器件在雷达恒虚警处理中的应用

文章介绍一种用电荷耦合器件设计和实现的雷达恒虚警处理中的长时间采样保持电路.目的是研究电荷耦合器件在雷达恒虚警处理中的应用效果及可行性.实践证明,用该器件设计的长时间循环采样保持电路比其它模拟方法性能优越,接收机内部噪声起伏可降低到5分贝以下.     

电荷耦合器件在雷达恒虚警处理中的应用

文章介绍一种用电荷耦合器件设计和实现的雷达恒虚警处理中的长时间采样保持电路.目的是研究电荷耦合器件在雷达恒虚警处理中的应用效果及可行性.实践证明,用该器件设计的长时间循环采样保持电路比其它模拟方法性能优越,接收机内部噪声起伏可降低到5分贝以下.     

EBS-CCD背照器件的寿命计算

本文根据背照器件SiO_2层吸收的x射线总剂量所造成的电子损伤,计算了背照器件的寿命。计算值和实验值十分一致。背照器件的有效寿命可达几千小时以上,这在作者的加速寿命试验中得到进一步证实。     

红外焦平面阵列

红外焦平面使用电荷耦合器件(CCD)作传感和信息处理,可提高探测器的密度,并改进其性能。由电荷耦合概念制成的器件使用电荷耦合概念制成的器件有可能在红外成象中应用的有下列几种:InSb电荷注入器件(CID),累积型电荷耦合器件,非     

Two-phase m.n.o.s. charge-coupled device

A 2-phase charge-coupled device (c.c.d.) is proposed. It makes use of charge storage in an m.n.o.s. structure to define in the silicon substrate the asymmetrical potential wells required for unidirectional charge flow. The fabrication and operation of the device are described. The structure permits substantial simplification of the fabrication method as compared with other c.c.d.s.     

基于斜台面工艺的背照式GaN雪崩探测器制备

为了获得高功率高光束质量激光输出,设计并制备了一种780nm波段5发光单元列阵器件,其采用10μm宽窄条形波导,各发光单元中心间距为100μm,填充因子仅为10%。在准连续注入电流由1.2A增加到2.5A条件下,该器件的输出光束侧向光学参量积由0.666mm·mrad增加至0.782mm·mrad。注入电流为2.5A时,该器件实现了单边准连续506mW的高光束质量激光输出。 更多还原     

Dual-gate bucket-brigade devices

The low charge-transfer efficiency of the basic bucket-brigade circuit and the speed limitation of the tetrode approach have so far prevented bucket-brigade devices (BBD's), in spite of their greater fabrication simplicity, from competing with charge-coupled devices, excepting for audio applications. A novel charge-transfer device is presented and experimentally evaluated. The "dual-gate BBD" is a two-step-transfer device (a CCD transfer followed by a BBD transfer), showing operational performances comparable to surface-channel CCD's and, at the same time, enjoying the fabrication simplicity proper to bucket-brigade circuits. The concept is implemented using conventional p-channel aluminum-gate technology combined with an additional shadowed-gap float-off process. The characteristic features and the performance capabilities of the device are discussed.     

InP/InGaAs heterojunction phototransistors

We describe the fabrication and device characteristics of experimental back-illuminated InP/InGaAs n-p-n heterojunction phototransistors. These devices exhibit photoresponse in the wavelength range of0.95-1.6 mum. An optical gain of 40 at an input power of 1 nW (an improvement of 1000 in sensitivity over previously reported phototransistors) has been observed. Gains as high as 1000 have been achieved for higher incident power levels.     

Integrated electronic shutter for back-illuminated charge-coupleddevices

A novel electronic shutter has been integrated into the structure of a back-illuminated frame-transfer charge-coupled device (CCD) to permit short optical exposure times and to reduce the smear that occurs during the transfer of an image from the CCD detection area. The shutter consists of an n⁺ shutter drain placed in the vertical channel stop regions and stepped p-type buried layers formed by a high-energy implantation (1.0-1.5 MeV) located between the CCD n-type buried channel the and p substrate. These structures create electric fields that direct the photoelectrons to either the CCD detection region or the n⁺ shutter drain. The ratio of photons detected with the shutter open to photons detected with the shutter closed has been measured to be greater than 75000 for wavelengths below 540 nm. The corresponding shutter rise and fall times are less than 55 ns     

Novel tapping technique for charge-coupled devices

The letter proposes a useful technique for the nondestructive tapping of charge-coupled devices, with a presentation of both theoretical and experimental results for device operation. The usefulness of the technique lies primarily in its simplicity of fabrication and operation.     

InGaAs/InP p-i-n photodiodes for lightwave communications at the 0.95-1.65 µm wavelength

We summarize our work on back-illuminated photodiodes based on the As-Ga-In-P III-V semiconductor system which, with InP substrates, can provide photodetectors to cover the wavelength range of0.93-1.65 mum. LPE layer growth and material purification techniques are described, as well as the fabrication and characterization of p-i-n photodiodes made from these compounds. The relevant device parameters and their optimization are discussed, and the performance of high-bit-rate optical receivers employing the new detectors is noted. Finally, we suggest some areas where further research might lead both to a better understanding of carrier transport in these heterojunction configurations and to improved devices made from them.     

Simulation and Design of AlGaAs/InGaAs CCDs Based on pHEMT Technology

This paper describes the modeling, design, and fabrication of quarter-micrometer double delta-doped AlGaAs/InGaAs charge-coupled devices (CCDs) whose epitaxial layers and geometry were based around the device structure of commercial pHEMTs. A quasi-2-D physical model has been developed to investigate the properties of this novel 2-D electron gas CCD. This physical model allows the characteristics of the InGaAs transport channel as well as the dc characteristics of the device to be predicted within a reasonable amount of time. This model also shows how "individual" charge packets can be controllably transferred through the device when appropriate clocking voltages are applied to the gates of the CCD. This capacitive gate structure device is then shown to be successfully fabricated using established GaAs heterostructure fabrication techniques to ensure good repeatability. The dc characteristics of the fabricated CCD delay line are included.     

Novel 896-element infrared Schottky detector line array

The application of a mask-level butting technique to the design and fabrication of a very long, monolithic silicide infrared (IR) charge-coupled device (CCD) line array is described. This technique gives a continuous line of 896 IR sensing elements. The number of IR detectors (the length of the array) can be varied as required at the device dicing and packaging stages. The maximum array length is limited only by the silicon wafer size and the processing yield     

Charge-coupled imaging devices: Experimental results

The design and fabrication of a 96-element 3-phase linear charge-coupled device are described. A transfer efficiency of ∼95 percent over 288 transfers at a 1-MHz clock rate was measured. The use of the device as an analog delay line is demonstrated and its imaging properties are illustrated with reproductions of black and white text and a picture with gray scale. The results demonstrate the feasibility of using self-scanned imaging devices in practical applications. Configurations are presented for both an improved linear and an area imaging device. In both cases the problem of image smear, which occurs if stored charge is transferred along the light-sensitive region and if significant light integration takes place during this transfer, can be avoided.