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本文论述了光导纤维及电荷耦合器件(简称 CCD)技术在液体比重测量方面的应用情况。重点介绍了 CCD 器件的工作原理和工作特点及应用注意事项,讨论了光纤 CCD 测量系统在测量液体比重时所能达到的精度。理论和实验表明:光纤 CCD 测量系统具有测量精度高,操作简单、使用方便等特点。 相似文献
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CCD抽样过程对傅里叶变换轮廓术测量的影响 总被引:7,自引:4,他引:3
针对傅里叶变换轮廓术(FTP)测量中的离散过程理论分析存在的不足,讨论了以前被忽略的CCD的取样过程以及CCD像元尺寸对FTP测量的影响,建立了完整的CCD抽样的数学模型,分析了CCD像元的光敏单元尺寸大小对FTP测量的影响,讨论了CCD取样所引起的信号失真和频谱混叠问题,给出了相关的表达式和判断准则,使得基于离散傅里叶变换的FTP分析方法更贴近实际测量。 相似文献
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基于DSP的双线阵CCD红外测宽系统 总被引:3,自引:3,他引:0
研制了一种基于数字信号处理器(DSP)技术的双线阵CCD红外测宽系统。测量系统采用CCD传感器光采样与ADC数据采集、DSP数据处理3级流水线结构,利用板材自身红外辐射进行测量。根据CCD曝光时间与输出模拟电压的关系,自动调整CCD增益,从而在高速数据处理的同时保持信号不失真,提高测量准确度。由于测量系统采用基于立体视觉原理的双线阵CCD测量方法,消除了板材横摆、跳动、倾斜对测量精度的影响,因而在无背光源情况下,实现了宽带钢宽度的高速和高精度测量。 相似文献
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为了大幅提高CCD的测量精度,提出了一种全新的CCD使用方法。该方法是将像素间距为H的CCD器件的像素行沿与被测边缘垂直方向成一定角度α来进行摆放。此时,单线阵CCD的最大测量误差减小为H×cosα,N个线阵CCD等距错排并以α角度斜放,最大测量误差将减小为(Hcosα)/N,当列间距为h的面阵CCD沿被测对象轴向斜放时,最大测量误差减小为h×sinα。分别采用单CCD和双CCD,对直径为5.000,8.000和12.000mm的三个标准杆件的直径进行了测量。结果表明,双CCD斜放,可获得更高的测量精度。该方法可从理论上彻底打破CCD像素间距的限制,并使CCD的测量精度大幅度地提高,进一步拓展CCD的应用范围。 相似文献
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针对直线感应电子加速器(LIA)实验束参数测量技术应用过程中,电荷耦合器件(CCD)在纳秒激光辐照下工作的损伤效应方面进行研究。在分析CCD感光成像原理及其高能粒子测量应用的基础上,通过监测这种辐射下CCD输出信号的变化和实验后CCD的成像,对CCD中发生的软、硬损伤进行探讨,得到CCD能量损伤阈值的光子的响应特性和辐射损伤评估,保证了加速器束参数测量的可靠性。 相似文献
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Nishida Y. Koike J. Ohtake H. Abe M. Yoshikawa S. 《Electron Devices, IEEE Transactions on》1989,36(2):360-366
To achieve a high-performance image sensor for a broadcast TV camera, several studies of the noise characteristics of a CCD image sensor are described. The noise perception limit and the dependence of random noise and fixed pattern noise (FPN) on signal charge in a CCD imager were measured to obtain a correlation between measured noise and subjective noise. A method has been devised to measure FPN and random noise separately. Using this method, it has been confirmed that noise can be reduced to less than the perception limit using new noise-suppression techniques 相似文献
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The variance versus average signal has been measured for a pixel in an electronically shuttered and back-illuminated CCD imaging array. The measurements demonstrate that, over a certain operating range, the electronic shutter modifies the input Poisson distributed photoelectrons during the collection process such that the charge signal accumulated in the CCD well has a sub-Poisson distribution (variance less than the mean). A simple one-dimensional model has been developed that explains the experimental results 相似文献
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Reich R.K. Mountain R.W. McGonagle W.H. Huang J.C.-M. Twichell J.C. Kosicki B.B. Savoye E.D. 《Electron Devices, IEEE Transactions on》1993,40(7):1231-1237
A novel electronic shutter has been integrated into the structure of a back-illuminated frame-transfer charge-coupled device (CCD) to permit short optical exposure times and to reduce the smear that occurs during the transfer of an image from the CCD detection area. The shutter consists of an n+ shutter drain placed in the vertical channel stop regions and stepped p-type buried layers formed by a high-energy implantation (1.0-1.5 MeV) located between the CCD n-type buried channel the and p substrate. These structures create electric fields that direct the photoelectrons to either the CCD detection region or the n+ shutter drain. The ratio of photons detected with the shutter open to photons detected with the shutter closed has been measured to be greater than 75000 for wavelengths below 540 nm. The corresponding shutter rise and fall times are less than 55 ns 相似文献
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激光干扰CCD系统的实验研究 总被引:3,自引:0,他引:3
为了验证激光辐照CCD系统的干扰效果,进行了视场内和视场外He-Ne激光干扰面阵CCD探测器系统的实验研究,测得了像元饱和阈值和局部受辐照时的CCD饱和功率街度阈值.使用Matlab编程处理了视场内干扰图像,得到了激光入射能量与CCD饱和面积比的关系曲线,并对实验中出现的光饱和串音现象进行了理论分析.对视场外干扰图像进... 相似文献
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为了测量生物组织的光学特性参量,采用CCD漫反射法和透射法,通过分析CCD摄取的待测样品表面的漫反射光分布图像,利用漫射近似理论,实现了漫反射法对生物组织模拟液(intralipid-20%稀释液)、牛肌肉、猪肌肉和鸡胸肉光学特性参量的测量,获得了样品的吸收系数和有效散射系数;测量了不同浓度生物组织模拟液的透射光强度,根据Beer-Lambert定律,实现了透射法对光学特性参量的测量,获得了样品的散射系数,进而得到了有效散射系数;并将漫反射法和透射法对同种样品光学特性参量的测量结果以及他人的测量结果进行了比较。结果表明,漫反射法和透射法的测量结果有很好的吻合性,测量生物组织光学特性参量采用的CCD测量装置和处理方法具有较高的精度。 相似文献
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激光对CCD器件破坏时几种阈值的测量 总被引:11,自引:1,他引:10
本文简要回顾了近十年来激光CVD(LCVD)技术的发展概况及其在金属、电介质和半导体薄膜生长方面的应用情况。阐明了这种新发展起来的成膜技术不仅因其生长的低温化能够给器件带来优良的电学特性,同时也可利用其高精度的膜厚控制特性获得新结构的材料和器件。作者还对该技术的广泛的应用前景予以展望和肯定。 相似文献
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Reich R.K. Mountain R.W. Robinson M. McGonagle W.H. Loomis A.H. Kosicki B.B. Savoye E.D. 《Electron Devices, IEEE Transactions on》1997,44(10):1672-1678
A charge modulation device (CMD) has been fabricated in a p-type epitaxial layer grown from the buried-channel silicon region of a charge-coupled device (CCD). Construction of the CMD directly above the CCD buried-channel and over the oxidized CCD transfer gates lowers the effective sense capacitance while providing isolation of the CMD source/drain regions. Responsivity values of 28 and 66 μV/e for feedback and no feedback conditions, respectively, were measured dynamically on test devices. Input-referred noise values of approximately four electrons r.m.s. were calculated from noise spectral density measurements assuming a low-pass filter 3 dB cutoff frequency of 5 MHz and correlated double sampling 相似文献