Effect of cobalt oxide on the a.c. conduction mechanism of copper tellurite glasses

Electrical measurements on binary and ternary glasses of compositions 65TeO₂-35CuO and 65TeO₂-34CuO-1CoO (mol%) are reported at temperatures between 293–458 K in the frequency range up to 10^–6 Hz. The measured conductivity shows a frequency dependence obeying the equation () =A ^s withs <1 but taking different values at different temperatures. The capacitance of the glasses shows an increase in value with increase in temperature at low frequencies. The tangent of the loss angle (tan ) and dielectric loss factor _r were found to increase with the increase in temperature and decrease in frequency but the usual Debye loss peaks were absent even at high temperatures. The relative dielectric constant _r was unexpectedly high, approximately 10³, and was found to decrease very slightly with increasing frequency. Overall the effect of a small amount of CoO (ã 1 mol%) is found to have a dominant effect on the dielectric properties of copper tellurite glasses.     

Standard Gibbs' energies of formation of BaCuO2, Y2Cu2O5 and Y2BaCuO5

The Gibbs' energies of formation of BaCuO₂, Y₂Cu₂O₅ and Y₂BaCuO₅ from component oxides have been measured using solid state galvanic cells incorporating CaF₂ as the solid electrolyte under pure oxygen at a pressure of 1.01×10⁵ Pa BaO + CuO BaCuO₂ G _f,ox ^o (± 0.3) (kJ mol^–1)=–63.4–0.0525T(K) Y₂O₃ + 2CuO Y₂Cu₂O₂ G _f,ox ^o (± 0.3) (kJ mol^–1)=18.47–0.0219T(K) Y₂O₃ + BaO + CuO Y₂BaCuO₅ G _f,ox ^o (± 0.7) (kJ mol^–1)=–72.5–0.0793T(K) Because the superconducting compound YBa₂Cu₃O_7– coexists with any two of the phases CuO, BaCuO₂ and Y₂BaCuO₅, the data on BaCuO₂ and Y₂BaCuO₅ obtained in this study provide the basis for the evaluation of the Gibbs' energy of formation of the 1-2-3 compound at high temperatures.     

High-frequency dielectric properties of Mg-Al-Si,Ca-Al-Si and Y-Al-Si oxynitride glasses

Recently developed coaxial line techniques [1] have been used to determine, at room temperature, the values of the real () and imaginary (') parts of the dielectric constants for some Mg-Al-Si, Ca-Al-Si and Y-Al-Si oxynitride glasses over the frequency range 500 MHz to 5 GHz. The frequency dependencies of and ' are consistent with the universal law of dielectric response in that (-_t8)^(n–1) and '^(n–1) for all glass compositions; the high experimental value of the exponent (n=1.0±0.1) suggests the limiting form of lattice loss [2] situation. In this frequency range, as previously reported [3] at longer wavelengths, the addition of nitrogen increases the dielectric constant, (); in both the oxide and oxynitride glasses is also influenced by the cation, being increased with cation type in the order magnesium, yttrium, calcium as at lower frequencies.     

Thermal transport properties of helium near the superfluid transition. II. Dilute3He-4He mixtures in the superfluid phase

Measurements of the average thermal conductivity _exp hQ/T and of the thermal relaxation time to reach steady-state equilibrium conditions are reported in the superfluid phase for dilute mixtures of³He in⁴He. Hereh is the cell height,Q is the heat flux, andT is the temperature difference across the fluid layer. The measurements were made over the impurity range 2×10^–9<X(³He)<3×10^–2 and with heat fluxes 0.3<Q<160 µW/cm². Assuming the boundary resistanceR _b , measured forX<10^–5, to be independent ofX over the whole range ofX, a calculation is given for _exp. ForQ smaller than a well-defined critical heat fluxQ _c (X) X ^0.9, _exp is independent of Q and can be identified with the local conductivity _eff, which is found to be independent of the reduced temperature = (T–T)/T for –10^–2. Its extrapolated value at T is found to depart forX10^–3 from the prediction X ^–1 , tending instead to a weaker divergence X ^–a witha0.08. A finite conductivity asX tends to zero is not excluded by the data, however. ForQ >Q _c (X), a nonlinear regime is entered. ForX10^–6, the measurements with the available temperature resolution are limited to the nonlinear conditions, but can be extrapolated into the linear regime forX2×10^–7. The results for _exp(Q),Q _c (X), and _eff(XX) are found to be internally consistent, as shown by comparison with a theory by Behringer based on Khalatnikov's transport equations. Furthermore, the observed relaxation times (X) in the linear regime are found to be consistent forX>10^–5 with the hydrodynamic calculations using the measured _eff(X). ForX<10^–5, a faster relaxation mechanism than predicted seems to dominate. The transport properties in the nonlinear regimes are presented and unexplained observations are discussed.     

Decomposition of some Si-Al-O-N powders during plasma spheroidization

An attempt to prepare Si-AI-O-N glasses with compositions lying along the mullite-Si₃N₄ junction, by subjecting powders to rapid melting in a nitrogen plasma followed by quenching (10⁶ C sec^–1), resulted in their decomposition. Powders (–53, + 37m) containing SiO₂/Si₃N₄ in the ratio 3/1 tended to decompose to give spheroidized-AI₂O₃/-AI₂O₃ particles, SiO and N₂. For SiO₂/Si₃N₄>3 the particles consisted of-AI₂O₃ stabilized by the presence of SiO₂ in solution, whereas if SiO₂/Si₃N₄<3, the particles consisted predominantly of the AI₂O₃-AIN spinel. Larger particle size powders (–75, + 53m) did not decompose to the same extent and there was evidence that a nitrogen-containing glass was formed with a devitrification temperature of 1100° C compared with 1000° C for AI₂O₃-SiO₂ glasses.     

Radiation of internal waves during vertical motion of a body through a nonuniform liquid

Energy losses to radiation of internal waves during the vertical motion of a point dipole in two-dimensional and three-dimensional cases are computed.Notation _o(z), p_o(z) density and pressure of the ground state - z vertical coordinate - v, p, perturbed velocity, pressure, and density - H(d 1n _o/dz)^–1 characteristic length scale for stratification - N=(gH^–1–g²c _o ^–2 )^1/2 Weisel-Brent frequency - g acceleration of gravity - c_o speed of sound - vertical component of the perturbed velocity - V vector operator - k wave vector - frequency - d vector surface element - W magnitude of the energy losses - (t), (r) (x)(y)(z) Dirac functions - v_o velocity of motion of the source of perturbations - d dipole moment of the doublet - _o,l length dimension parameters - _o intensity of the source Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 39, No. 4, pp. 619–623, October, 1980.     

Deviation from Wiedemann–Franz Law for the Thermal Conductivity of Liquid Tin and Lead at Elevated Temperature

The thermal conductivities of tin and lead in solid and liquid states have been determined using a nonstationary hot wire method. Measurements on tin and lead were carried out over temperature ranges of 293 to 1473 K and 293 to 1373 K, respectively. The thermal conductivity of solid tin is 63.9±1.3 Wm^–1K^–1 at 293 K and decreases with an increase in temperature, with a value of 56.6±0.9 Wm^–1K^–1 at 473 K. For solid lead, the thermal conductivity is 36.1±0.6 Wm^–1K^–1 at 293 K, decreases with an increase in temperature, and has a value of 29.1±1.1 Wm^–1K^–1 at 573 K. The temperature dependences for solid tin and lead are in good agreement with those estimated from the Wiedemann–Franz law using electrical conductivity values. The thermal conductivities of liquid tin displayed a value of 25.7±1.0 Wm^–1K^–1 at 573 K, and then increased, showing a maximum value of about 30.1 Wm^–1K^–1 at 673 K. Subsequently, the thermal conductivities gradually decreased with increasing temperature and the thermal conductivity was 10.1±1.0 Wm^–1K^–1 at 1473 K. In the case of liquid lead, the same tendency, as was the case of tin, was observed. The thermal conductivities of liquid lead displayed a value of 15.4±1.2 Wm^–1K^–1 at 673 K, with a maximum value of about 15.6 Wm^–1K^–1 at 773 K and a minimum value of about 11.4±0.6 Wm^–1K^–1 at 1373 K. The temperature dependence of thermal conductivity values in both liquids is discussed from the viewpoint of the Wiedemann–Franz law. The thermal conductivities for Group 14 elements at each temperature were compared.     

Long-lived induced Raman bands, appearance and ? 4 cm?1 shift of “500” band as a result of pulsed IR(520–640 cm?1) laser irradiation on YBaCuO single crystals

Single crystal YBa₂Cu₃O_6.4 ¯Ec irradiation by CO₂-Ar laser caused (1) a shift of the 500 Raman band (480–490 cm^–1), which means the appearance of the superconducting phase in the focus spot (proved by preliminary results of the inductive method); (2) the increase in intensity of many weakly lived Raman bands that usually look like pedestals of the 500 band (they were observed before as strictly reversible Ar⁺ laser photoinduced bands). The additional (10 components) structure was developed in the region 400–600 cm^–1 on the Raman spectra by comparison of spectra for samples before and after irradiation. By reconstruction of such spectra we analyzed the composition of the sample, which was assumed to be a mixture of microregions with different oxygen content.     

A gradient method of defining smooth solutions to inverse boundary-value problems in thermal conduction

An iterative algorithm is described for solving boundary-value inverse problems in thermal conduction by steepest descent, which utilizes information on the smoothness of the solution.Notation A, B linear operators - u element of solution space U - f exact reference data - f reference data uncertainty - value of reference data uncertainty - A^–1 inverse operator - u^(k)() k-th derivative of function u - _m length of observation interval - _i(t) polynomials of degree i–1 - A^*, B^*, L^* operators conjugate to the operators A, B, L - Jg discrepancy functional gradient - _n descent step along the discrepancy antigradient for the n-th iteration - K( –) kernel of integral equation - q() heat flux - T() measured temperature inside body Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 39, No. 2, pp. 259–263, August, 1980.     

Synthesis of silicon nitride powder through nitrogen gas atomization

The feasibility of synthesizing silicon nitride powder utilizing reactive atomization processing was analysed. The range of times required for the flight time of particles, the cooling rate of the silicon melt, the reaction time of silicon and nitrogen, and the diffusion of nitrogen through silicon nitride layers were obtained and compared. The results of this study indicated that the production of silicon nitride powder through the reactive atomization process would be limited by diffusion of nitrogen through the nitride (ash) layer, assuming the nitride layer was coherent and the unreacted core model was a valid representation of the liquid silicon-silicon nitride system.Nomenclature k(T) reaction rate constant at temperature, T(s^–1) - k ₀ Arrhenius coefficient - E activation energy (kJ mol^–1) - R gas constant - T temperature (K) - fraction of normalized conversion of -phase in time t - fraction of normalized conversion of -phase in time t - k reaction rate constant for -phase (s^–1) - k reaction rate constant for -phase (s^–1) - k ⁱ intrinsic first-order rate constant for -phase (s^–1) - x conversion fraction of -phase in time t - x conversion fraction of -phase in time t - n reaction order for -phase = 1 - n reaction order for -phase = 0.5 - J diffusion flux (mol m^–2 s^–1) - D diffusivity, or diffusion coefficient (m² s^–1 or cm² s^–1) - dC change in concentration (mol m^–3) - dl change in distance, l (m) - A(_g) gaseous reactant A - B reactant B (may be solid or liquid) - P solid product P - b stoichiometric coefficient of reactant B - p stoichiometric coefficient of product P - t time of reaction passed (s) - time for complete reaction of a particle (s) - X _B conversion fraction - r _c core radius (m) - R _p particle radius (m) - _B molar density of reactant B (mol m^–3) - k _g mass transfer coefficient between fluid and particle (m s^–1) - C _Ag concentration of gaseous reactant A (mol m^–3) - D _e effective diffusion coefficient of gaseous reactant in ash layer (m² s^–1)     

Thermal conductivity of methane

This paper reports thermal conductivity data for methane measured in the temperature range 120–400 K and pressure range 25–700 bar with a maximum uncertainty of ± 1%. A simple correlation of these data accurate to within about 3% is obtained and used to prepare a table of recommended values.Nomenclature a _k ,b _ij ,b _k Parameters of the regression model, k= 0 to n; i =0 to m; j =0 to n - P Pressure (MPa or bar) - Q _kl Heat flux per unit length (mW · m^–1) - t time (s) - T Temperature (K) - T _cr Critical temperature (K) - T _r reduced temperature (= T/T _cr) - T _w Temperature rise of wire between times t ₁ and t ₂ (deg K) - T ^* Reduced temperature difference (TT _cr)/T _cr - Thermal conductivity (mW · m^–1 · K^–1) - ₁ Thermal conductivity at 1 bar (mW · m^–1 · K^–1) - _bg Background thermal conductivity (mW · m^–1 · K^–1) - _cr Anomalous thermal conductivity (mW · m^–1 · K^–1) - _e Excess thermal conductivity (mW · m^–1 · K^–1) - Density (g · cm^–3) - _cr Critical density (g · cm^–3) - _r Reduced density (= / _cr) - ^* Reduced density difference (– _cr )/ _cr      

SQUID behavior at liquid nitrogen temperature in high-T c superconductors of the type Y-Ba-Cu-O

Quantum interference at liquid nitrogen temperature in a bulk sample of high-T _c superconductor YBa₂Cu₃O_9–y is described. The SQUID quantization loop is formed at random inside the sintered sample as an internal percolation loop with a Josephson weak link. The estimated values of this multiply connected quantization loop are: the inductance of the loopL _SQ4×10^–10 H, the critical currentI _c1×10^–6 A, the area of the loopA1×10^–8 m², and the hysteresis parameter _L 1. In the flux-locked loop regime the field sensitivity of this liquid nitrogen SQUID with a random loop is 10^–9 T/Hz^1/2 and the resolution is 5×10^–3 ₀/Hz^1/2.     

Fabrication, characterization and sintering of glass-ceramics for low-temperature co-fired ceramic substrates

Cordierite-based glass-ceramics with non-stoichiometric composition doped with rare earth oxide (CeO₂) and heavy metal oxide (Bi₂O₃) respectively were fabricated from glass powders. After sintering and crystallization heat treatment, various physical properties, including compact density and apparent porosity, were examined to evaluate the sintering behavior of cordierite-based glass-ceramics. Results showed both that the additives heavy metal oxide and rare earth oxide promoted the sintering and lowered the phase temperature from - to -cordierite as well as affecting the dielectric properties of sintered glass-ceramics. The complete-densification temperature for samples was as low as 900 °C. This material has a low dielectric constant (5.3), a low dielectric loss (0.2%) and a low thermal expansion coefficient (2.8–3.52×10^–6 K^–1), and can be co-fired with high conductivity metals such as Au, Ag, Cu, Ag/Pd paste at low temperature (below 950 °C), which makes it a promising material for low-temperature co-fired ceramic substrates.     

Dielectric Dispersion in Yttrium and Erbium Formate Dihydrate Crystals

The dielectric properties of Y(HCOO)₃ · 2H₂O and Er(HCOO)₃ · 2H₂O are studied. The frequency dependences (0.01 Hz to 20 kHz) of the real () and imaginary () parts of dielectric permittivity ( = – i) are shown to follow a fractal scaling law for the dielectric response of solids. In the tan versus temperature curves, a number of maxima are revealed in a narrow temperature range. The experimental data are used to evaluate the activation energies of relaxation processes. The observed anomalies are assumed to be associated with changes in the dynamics of protons in hydrogen bonds.     

Some electrical characteristics of lithium and yttrium sialons

Some electrical properties of hot-pressed lithium sialons, Li _x/8Si_6–3x/4Al_5x/8O _x N_8–x havingx<5 and an yttrium sialon were measured between 291 and 775 K; the former consisted essentially of a single crystalline phase whereas the latter contained 98% glassy phase. For lithium sialons, the charging and discharging current followed al(t) t ^–nlaw withn=0.8 at room temperature. The d.c. conductivities were about 10^–13 ohm^–1 cm^–1 at 291 K and rose to 5×10^–7 ohm^–1 cm^–1 at 775 K. At high temperatures electrode polarization effects were observed in d.c. measurements. The variation of the conductivity over the frequency range 200 Hz to 9.3 GHz followed the () ⁿ law. The data also fitted the Universal dielectric law,() ^n–1 well, and approximately fitted the Kramers-Kronig relation()/()– =cot (n/2) withn decreasing from 0.95 at 291 K to 0.4 at 775 K. The temperature variations of conductivities did not fit linearly in Arrhenius plots. Very similar behaviour was observed for yttrium sialon except that no electrode polarization was observed. The results have been compared with those obtained previously for pure sialon; the most striking feature revealed being that _d.c. for lithium sialon can be at least 10³ times higher than that of pure sialon. Interpretation of the data in terms of hopping conduction suggests that very similar processes are involved in all three classes of sialon.     

Effect of nickel on microwave dielectric properties of Ba(Mg1/3Ta2/3)O3

The dielectric and physical properties of the complex perovskite Ba(Mg_1/3Ta_2/3)O₃ system in which magnesium was substituted for nickel from 0.03–0.67 mol%, were investigated in the temperature range 20–110C, and the frequency range 10.5–14.5 GHz. As the nickel content was increased, the dielectric constant, the degree of ordering, and the unloaded Q decreased. The temperature dependence of the dielectric constant and the temperature coefficient of resonant frequency of the specimens annealed at 1500C for 20 h were found to be greater than those of the specimens sintered at 1650C for 2 h. These results are due to the increase in the density, the increase in grain size, and the lattice distortion.     

Relaxation times and mass diffusion in superfluid dilute3He-4He mixtures

Relaxation times are reported from the transients observed during thermal conductivity _eff and thermal diffusionk _T ^* measurements in superfluid mixtures of³He in⁴He with a layer thickness of 1.81 mm. The experiments extend from 1.7 K toT and over a³He concentration range 10^–6X<5×10^–2. The agreement between the measured and the predicted from the two-fluid thermohydrodynamic equations is satisfactory forX>10^–3 but deteriorates for smaller³He concentrations. This situation is similar to that for _eff andk _T ^* results and indicates that the transport properties in very dilute mixtures with layers of finite thickness are not well understood. ForX>10^–3, the mass diffusion coefficientD _iso for isolated³He in⁴He has been determined from and from _eff measurements. There is an inconsistency by a constant numerical factor between these determinations. This problem might be related to the observations that in the superfluid phase, the relaxation times for different cell heightsh do not scale withh ². FromD _iso derived via the _eff data, the³He impurity-roton scattering cross section is determined. Comparisons with previous work are made.     

Eliashberg analysis of the specific heat of Nb0.75Zr0.25

The specific heat of Nb_0.75Zr_0.25 is measured from 1.2 to 50 K in zero magnetic field. A phonon density of statesF() and a spectral electron-phonon coupling function ²()F() are fitted to the data in the normal state and in the superconducting state. The results are compared with a previous similar analysis of the specific heat of pure Nb and with published tunneling data. It is found that in Nb_0.75Zr_0.25, –*=1.13, _log=109 K, and N(0)=0.85 eV^–1 at^–1 spin^–1, compared with the figures 0.84, 146 K, and 0.85 eV^–1 at^–1 spin^–1, respectively, in pure Nb. These data confirm that the increase ofT _c upon the alloying of Nb with Zr is due to phonon softening. They further show that the electronic density of states at the Fermi level is identical in Nb and Nb_0.75Zr_0.25. Dimensionless thermodynamic ratios predicted from tunneling data are entirely confirmed, thus confirming the internal consistency of the Eliashberg theory for superconductivity.     

Dielectric Properties of Melt-Grown Cd1 – xZnxTe Crystals

The real (") and imaginary (") parts of the complex dielectric permittivity of Cd_{1 – x} Zn _x Te (x= 0.1–0.2) crystals are measured as a function of temperature and frequency. The "-vs.-temperature data show a maximum, and " rises rapidly at about the same temperature. This behavior is interpreted in terms of compositional fluctuations, structural defects, and the associated internal electric fields.     

Boundary-layer similarity flows driven by a power-law shear over a permeable plane surface

Summary. The boundary-layer similarity flow driven over a semi-infinite permeable flat plate by a power-law shear with asymptotic velocity profile U(y)=y(y,>0) is considered in the presence of lateral suction or injection of the fluid (y denotes the coordinate normal to the plate). The analytically tractable cases =–2/3 and =–1/2 are examined in detail. It is shown that while for =–2/3 the adjustment of the flow over an impermeable plate to the power-law shear is not possible, in the permeable cases the presence of suction allows for a family of boundary-layer solutions with the proper algebraic decay. The value of the skin friction corresponding to this family of solutions is given by the parameter s=9³/(4f_w), where f_w denotes the suction parameter. In the limiting case of a vanishing suction and a properly vanishing value of the parameter (such that s=finite), this family of algebraically decaying solutions goes over into the (exponentially decaying) Glauert-jet. In the case =–1/2, solutions showing the proper algebraic decay were found both for suction ( f_w > 0) and injection ( f_w<0) in the whole range –<f_w<+. In this case the skin friction parameters s=2²/3 is independent of the suction/injection parameter f_w.