Phase structure and nano-domain in high performance of BaTiO3 piezoelectric ceramics

BaTiO₃ ceramics were prepared by conventional sintering technique with a special emphasis on the effects of sintering temperature (1100-1230 °C) on the crystalline structure and piezoelectric properties. XRD patterns indicated that the crystallographic structure changed from tetragonal phase to orthorhombic one with raising sintering temperature from 1160 °C to 1180 °C. Domains were shaped in a stripe and a herringbone in orthorhombic samples for BaTiO₃ ceramics. The domain width and domain density increased with raising sintering temperature. The BaTiO₃ ceramic sintered at 1190 °C showed the excellent electrical properties, d₃₃ = 355 pC/N, k_p = 40%, P_r = 10.2 μC/cm², respectively, which are originated to the contributions of both the crystallographic structure transition and nano-domain.     

Effects of CaTiO3 addition on the densification and microwave dielectric properties of BiSbO4 ceramics

In this study, the effects of CaTiO₃ addition on the sintering characteristics and microwave dielectric properties of BiSbO₄ were investigated. Pure BiSbO₄ achieved a sintered density of 8.46 g/cm³ at 1100 °C. The value of sintered density decreased with increasing CaTiO₃, and sintering at a temperature higher than 1100 °C led to a large weight loss (>2 wt%) caused by the volatile nature of the compound. Samples either sintered above 1100 °C or with a CaTiO₃ content exceeding 3 wt% showed poor densification. SEM micrographs revealed microstructures with bimodal grain size distribution. The size of the smaller grains ranged from 0.5 to 1.2 μm and that of the larger grains between 3 and 7 μm. The microwave dielectric properties of the (1−x) BiSbO_4−x CaTiO₃ ceramics are dependent both on the x value and on the sintering temperature. The 99.0 wt% BiSbO₄–1.0 wt% CaTiO₃ ceramic sintered at 1100 °C reported overall microwave dielectric properties that can be summarized as ε_r≈21.8, Q×f≈61,150 GHz, and τ_f≈−40.1 ppm/°C, all superior to those of the BiSbO₄ ceramics sintered with other additives.     

Fabrication and electrical properties of Pb(Co1/3Nb2/3)O3 ceramics

Pb(Co_1/3Nb_2/3)O₃ (PCN) ceramics have been produced by sintering PCN powders synthesized from lead oxide (PbO) and cobalt niobate (CoNb₂O₆) with an effective method developed for minimizing the level of PbO loss during sintering. Attention has been focused on relationships between sintering conditions, phase formation, density, microstructural development, dielectric and ferroelectric properties of the sintered ceramics. From X-ray diffraction analysis, the optimum sintering temperature for the high purity PCN phase was found at approximately 1050 and 1100 °C. The densities of sintered PCN ceramics increased with increasing sintering temperature. However, it is also observed that at very high temperature the density began to decrease. PCN ceramic sintered at 1050 °C has small grain size with variation in grain shape. There is insignificant change of dielectric properties with sintering temperature. The P–E hysteresis loops observed at −70 °C are of slim-loop type with small remanent polarization values, which confirmed relaxor ferroelectric behavior of PCN ceramics.     

Enhanced mechanical and dielectric behavior of BaTiO3/Cu composites

BaTiO₃/xCu composite ceramics with x = 0-30 wt.% were fabricated by the traditional mixing method in nitrogen gas. The mechanical properties and electric properties of the obtained composites were investigated as a function of the Cu mass fraction using a three bending test and impedance spectroscopy. The results indicated that the relative density of the sintered composites reached above 91%, the Cu-dispersed BaTiO₃ composites enhanced the mechanical properties, particularly the high fracture toughness (∼3.9 MPa m^1/2) and bending strength (∼134 MPa), compared to the monolithic BaTiO₃. Furthermore, the percolation threshold of BaTiO₃/Cu composites was x = 25 wt.%. The permittivity (?_r) markedly increased from ∼2000 for monolithic BaTiO₃ to ∼9000 with increasing Cu up to 30 wt.%. Additionally, the temperature coefficient of this system was less than 5% in the temperature range of 25-115.     

Creep behavior of TiCxN1−x-CoTi cermets synthesized by mechanically induced self-sustaining reaction

The plastic flow of TiC_xN_1−x-CoTi cermets has been investigated by uniaxial compression tests carried out in argon atmosphere at temperatures between 1100 and 1200 °C. Two different cermets, with 5 wt.% W or WC content as sintering additives, have been explored to assess the influence of the sintering additives on creep. The microstructural observations of deformed samples and the mechanical results indicate that the hard phase (ceramic grains) controls the plastic deformation. The stress exponent changes from 1 to 2 with increasing strain rate, suggesting a transition in the deformation mechanism from diffusional creep to grain boundary sliding; both with similar activation energy values of about 400 kJ/mol. This value of activation energy agrees with C diffusion in the carbonitride grains as the strain rate controlling mechanism.     

Compositional dependence of phase structure and electrical properties in (K0.50Na0.50)0.97Bi0.01(Nb1−xZrx)O3 lead-free ceramics

(K_0.50Na_0.50)_0.97Bi_0.01(Nb_1-xZr_x)O₃ (KNBNZ) lead-free ceramics were prepared by the conventional solid-state sintering process. Their phase structure is dependent on the Zr content in the investigated range, and the ceramics endure a phase transition from pseudocubic to orthorhombic with increasing Zr content. Improved piezoelectric properties have been observed when the poling temperature is located at ~100 °C because of the coexistence of orthorhombic and tetragonal phases. Their dielectric and piezoelectric properties were enhanced by doping Zr, the ceramic with x=0.02 showing optimal electrical properties, i.e., d₃₃~161 pC/N, k_p~0.41, Q_m~81, T_c~370 °C, and T_o−t~130 °C. These results show that the KNBNZ ceramic is a promising lead-free piezoelectric material.     

Microwave dielectric properties of SnO2-doped CaSiO3 ceramics

SnO₂-doped CaSiO₃ ceramics were successfully synthesized by a solid-state method. Effects of different SnO₂ additions on the sintering behavior, microstructure and dielectric properties of Ca(Sn_1−xSi_x)O₃ (x=0.5–1.0) ceramics have been investigated. SnO₂ improved the densification process and expanded the sintering temperature range effectively. Moreover, Sn⁴⁺ substituting for Si⁴⁺ sites leads to the emergence of Ca₃SnSi₂O₉ phase, which has a positive effect on the dielectric properties of CaO–SiO₂–SnO₂ materials, especially the Qf value. The Ca(Sn_0.1Si_0.9)O₃ ceramics sintered at 1375 °C possessed good microwave dielectric properties: ε_r =7.92, Qf =58,000 GHz and τ_f=−42 ppm/°C. The Ca(Sn_0.4Si_0.6)O₃ ceramics sintered at 1450 °C also exhibited good microwave dielectric properties of ε_r=9.27, Qf=63,000 GHz, and τ_f=−52 ppm/°C. Thus, they are promising candidate materials for millimeter-wave devices.     

Enhanced piezoelectric properties of (K0.40Na0.60)0.94Li0.06Nb0.94SbO3 lead-free ceramics by optimizing the sintering temperature

Effects of sintering temperature on the microstructure and electrical properties of (K_0.40Na_0.60)_0.94Li_0.06Nb_0.94SbO₃ (KNLNS) lead-free ceramics are investigated. The grain size gradually becomes larger with increasing sintering temperature from 1055 °C to 1105 °C, and the piezoelectric property could be enhanced by optimizing their sintering temperature. The ceramic sintered at 1075 °C has optimum electrical properties, i.e., d₃₃~272 pC/N, k_p~43.5%, ε_r~1152, tan δ~0.026, and T_C~346 °C. These results show that the sintering temperature can optimize electrical properties of KNLNS ceramics.     

Influence of in-situ magnetic field pressing on the structural and multiferroic behaviour of BiFeO3 ceramics

Polycrystalline single phase BiFeO₃ (BFO) ceramic samples have been prepared by conventional solid state sintering and also by in-situ magnetic field pressing followed by solid state sintering. The influence of in-situ magnetic field pressing on the structural, magnetic, ferroelectric and thermal properties has been investigated in this work. X-ray diffraction analysis and Reitveld refinement shows the single phase characteristics of BFO samples. Further texture formation and the development of compressive lattice strain have been observed in the magnetic field pressed samples. A change in Fe-O-Fe bond angle and suppression of spiral spin structure results in the enhanced magnetization value M_s = 136 memu/g at 2 T. Similarly spontaneous polarization has also improved with a P_max value of 1.3 μC/cm². DSC plot shows a significant variation in heat flow and enthalpy at the Neel transition (T_N = 372 °C) and ferro to paraelectric transition (T_C = 820 °C) for the magnetic field pressed BFO samples.     

Low temperature synthesis and dielectric, ferroelectric and piezoelectric study of microwave sintered BaTiO3 ceramics

Barium titanate (BaTiO₃/BT) ferroelectric system was synthesized in single perovskite phase at low temperature by using powders derived from modified solid state reaction (MSSR) and sintered by microwave (MW) processing routes. Conventional calcination temperature was optimized at 900 °C for 4 h. MW sintering of BT samples was carried out at 1100 °C for 30 min to get dense (98% density) ceramics. Room temperature (RT) dielectric constant (?_r) and dielectric loss (tan δ) at 1 kHz frequency of MW sintered BT samples was found to be ∼2500 and 0.03, respectively. Saturated polarization vs. electric field (P-E) loops with remnant polarization (P_r) ∼6 μC/cm² and coercive field (E_c) ∼1.45 kV/cm confirmed the ferroelectric nature of MW sintered BT samples. Piezoelectric coefficient from strain vs. electric field (S-E) loops study was found to be 335 pm/V.     

Microstructure and dielectric properties of Dy/Mn doped BaTiO3 ceramics

Dy/Mn doped BaTiO₃ with different Dy₂O₃ contents, ranging from 0.1 to 5.0 at% Dy, were investigated regarding their microstructural and dielectric characteristics. The content of 0.05 at% Mn was constant in all the investigated samples. The samples were prepared by the conventional solid state reaction and sintered at 1290°, and 1350 °C in air atmosphere for 2 h. The low doped samples (0.1 and 0.5 at% Dy) exhibit mainly fairly uniform and homogeneous microstructure with average grain sizes ranged from 0.3 μm to 3.0 μm. At 1350 °C, the appearance of secondary, abnormal, grains in the fine grain matrix and core–shell structure were observed in highly doped Dy/BaTiO₃. Dielectric measurements were carried out as a function of temperature up to 180 °C. The low doped samples sintered at 1350 °C, display the high value of dielectric permittivity at room temperature, 5600 for 0.1Dy/BaTiO₃. A nearly flat permittivity–temperature response was obtained in specimens with 2.0 and 5.0 at% additive content. Using a Curie–Weiss and modified Curie–Weiss low, the Curie constant (C), Curie like constant (C′), Curie temperature (T_C) and a critical exponent (γ) were calculated. The obtained values of γ pointed out the diffuse phase transformation in highly doped BaTiO₃ samples.     

Low temperature sintering and microwave dielectric properties of Li2ZnTi3O8 ceramics doped with ZnO–La2O3–B2O3 glass

Li₂ZnTi₃O₈ ceramics doped with ZnO–La₂O₃–B₂O₃ glass were prepared by the conventional solid-state ceramic route. The effects of the ZnO–La₂O₃–B₂O₃ glass on the sintering temperature, phase composition, microstructure and microwave dielectric properties of Li₂ZnTi₃O₈ ceramics were investigated. The addition of ZLB glass can reduce the sintering temperature of Li₂ZnTi₃O₈ ceramic from 1075 °C to 925 °C without obvious degradation of the microwave dielectric properties. Only a single phase Li₂ZnTi₃O₈ with cubic spinel structure is formed in Li₂ZnTi₃O₈ ceramic with ZLB addition sintered at 925 °C. Typically, 1.0 wt% ZLB-doped Li₂ZnTi₃O₈ ceramic sintered at 925 °C can reach a maximum relative density of 95.8% and exhibits good microwave dielectric properties of ε_r=24.34, Q×f=41,360 GHz and τ_f=−13.4 ppm/°C. Moreover, this material is compatible with Ag electrode, which makes it a promising candidate for LTCC application.     

Structural evolution, sintering behavior and microwave dielectric properties of (1 − x)Li3NbO4-xLiF (0 ≤ x ≤ 0.9)

Sintering behavior, microstructure and microwave dielectric properties of (1 − x)Li₃NbO₄-xLiF (0 ≤ x ≤ 0.9) ceramics have been studied in this paper. Continuous solid solution with rock salt structure formed across the entire compositional range. Phase transformed from ordered body-centered cubic phase to short range ordered face-centered cubic phase with the addition of LiF. The x > 0.4 compositions could be densified at 850 °C/2 h. The optimized Q × f value for each composition increased with the increase of LiF content and saturated at about 75,000 GHz when x ≥ 0.15, whereas the optimized dielectric permittivity decreased with the increase of LiF content. All specimens exhibited negative τ_f value. The chemical compatibilities with copper (Cu) in the case of x = 0.4 composition and silver (Ag) in the case of x = 0.5 composition were also investigated, respectively. No chemical reaction has taken place between the matrix phase and Ag or Cu after sintering at 850 °C/2 h or 950 °C/2 h, respectively.     

Temperature dependence of piezoelectric properties on Nd and V co-substituted Bi4Ti3O12 ceramics for ceramic resonator applications

The temperature dependences of the piezoelectric properties of (Bi_4−yNd_y)_1−(x/12)(Ti_3−xV_x)O₁₂ [BNTV-x, y (x = 0.01, y = 0.00–1.00)] were investigated for environmentally friendly lead-free piezoelectric ceramic resonators with low-temperature coefficients of resonance frequency, TC-f. The |TC-f| in the (33) mode improved with increasing concentration of modified Nd ions, y, and exhibited the smallest |TC-f| value of 77.4 ppm/°C at y = 0.75 (BNTV-0.75). The |TC-f| in the other vibration mode (t), was also investigated for the BNTV-0.75 ceramic, and a smaller value of 42 ppm/°C was obtained. The (t) mode of the BNTV-0.75 ceramic showed excellent piezoelectric properties: Q_m = 4200, Q_e max = 31 and TC-f = −49.8 ppm/°C. These properties are very similar to those of commercialized hard PZT ceramics for resonator applications. The BNTV-0.75 ceramic seems to be a superior candidate material for lead-free piezoelectric applications of ceramic resonators.     

Sintering,microstructure and conductivity of La2NiO4+δ ceramic

Microstructure and electrical conducting properties of La₂NiO_4+δ ceramic were investigated in the sintering temperature range 1200–1400 °C. The results demonstrate that the microstructure and electrical conducting properties of La₂NiO_4+δ ceramic are sensitive to sintering temperature. Compared with a progressive densification development with sintering temperature from 1200 to 1300 °C along with an insignificant change in grain size, there is an exaggerated grain growth in the specimens sintered at higher temperatures. Increasing sintering temperature from 1200 to 1300 °C resulted in an enhancement of electrical conducting properties. Further increase of sintering temperature exceeding 1300 °C reduced the electrical conducting properties. A close relation between the microstructure and electrical conducting properties was suggested for La₂NiO_4+δ ceramic. With respect to the electrical conducting properties, the preferred sintering temperature of La₂NiO_4+δ ceramic was ascertained to be 1300 °C. The specimen sintered at 1300 °C exhibits a generally uniform microstructure together with electrical conductivities of 76–95 S cm⁻¹ at 600–800 °C.     

Phase composition and properties of solid solutions of GdFeO3–GdInO3 bulks

Solid solutions of the GdFeO₃–GdInO₃ system were prepared at 1550 °C by ceramic powder processing. The formulated composition was Gd(Fe_1−xIn_x)O₃ (GFI) with the indium contents at x = 0, 0.25, 0.5, 0.75, and 1.0. A stable phase of Gd(Fe_1/3In_2/3)O₃ in our system was identified by X-ray diffraction and phase composition analysis. Multi-phase morphologies were observed for GFI bulks with x = 0.5 and 0.75. Dielectric and electrical properties of the GFI bulks were investigated. The addition of 25% In³⁺ in GdFeO₃ had an obvious enhancement in polarization and led to an elevated resonance frequency. Dielectric properties of GFI bulks except GdInO₃ were strongly dependent upon the test frequency, which corresponded to the response of polarization mechanism. GdInO₃ displayed as a stable dielectric, which was frequency- and temperature-insensitive. GdInO₃ was thermally activated and became leaky until above 600 °C.     

Structure,dielectric and piezoelectric properties of Ba0.90Ca0.10Ti1−xSnxO3 lead-free ceramics

Lead-free piezoelectric ceramics Ba_0.90Ca_0.10Ti_1−xSn_xO₃ have been prepared by a conventional ceramic fabrication technique and the effects of Sn⁴⁺ on the structure, dielectric and piezoelectric properties of the ceramics have been investigated. All the ceramics exhibit a pure perovskite structure. After the substitution of Sn⁴⁺, the crystal structure of ceramics is transformed gradually from a tetragonal to an orthorhombic phase, and becomes a pseudo-cubic phase at x≥0.14. The substitution also decreases the Curie temperature greatly from 138 °C at x=0 to 33 °C at x=0.12, and shifts the orthorhombic–tetragonal phase transition to higher temperatures. Coexistence of the orthorhombic and tetragonal phases is formed in the ceramic at x=0.10, leading to significant improvements in the piezoelectric properties: d₃₃=521 pC/N and k_p=45.5%. Our results also reveal that the ceramics sintered at higher temperatures contain larger grains, and thus exhibit more noticeable tetragonal–orthorhombic phase transition and enhanced ferroelectric and piezoelectric properties.     

Enhanced stability in CO2 of Ta doped BaCe0.9Y0.1O3−δ electrolyte for intermediate temperature SOFCs

The influence of Ta concentration on the stability of BaCe_0.9−xTa_xY_0.1O_3−δ (where x=0.01, 0.03 and 0.05) powders and sintered samples in CO₂, their microstructure and electrical properties were investigated. The ceramic powders were synthesized by the method of solid state reaction, uniaxially pressed and sintered at 1550 °C to form dense electrolyte pellets. A significant stability in CO₂ indicated by the X-ray analysis performed was observed for the samples with x≥0.03. The electrical conductivities determined by impedance measurements in the temperature range of 550–750 °C and in various atmospheres (dry argon, wet argon and wet hydrogen) increased with temperature but decreased with Ta concentration. The highest conductivities were observed in the wet hydrogen atmosphere, followed by those in wet argon, while the lowest were obtained in the dry argon atmosphere for each dopant concentration. The composition with Ta content of 3 mol% showed satisfactory characteristics: good resistance to CO₂ in extreme testing conditions, while a somewhat reduced electrical conductivity is still comparable with that of BaCe_0.9Y_0.1O_3−δ.     

Synthesis and NTC properties of YCr1−xMnxO3 ceramics sintered under nitrogen atmosphere

YCr_1−xMn_xO₃ (0 ≤ x ≤ 0.8) negative temperature coefficient (NTC) compositions were synthesized by classical solid state reaction at 1200 °C, and sintered under nitrogen atmosphere at 1500 °C and 1600 °C. XRD patterns analysis has revealed that for x ≤ 0.6, the structure consists of a solid solution of an orthorhombic perovskite YCrO₃ phase with Mn substitute for Cr. For x ≥ 0.8, a second phase with a structure similar to the hexagonal YMnO₃ phase appears. SEM images and calculated open porosity have shown that the substitution of Mn for Cr results in a decrease in porosity. Whatever the sintering temperature, the electrical characterizations (between 25 and 900 °C) have shown that the increase in the manganese content involves the decrease in both resistivity and material constant B (parameter which characterizes the thermal sensitivity of material) when x ≤ 0.6. The magnitude order of the resistivity at 25 °C is of 10⁴-10⁸ Ω cm and activation energies vary from 0.28 to 0.99 eV at low and high temperatures, respectively.