Effects of Al2O3 addition on the microstructure and microwave dielectric properties of Ba4Nd9.33Ti18O54 ceramics

Ba₄Nd_9.33Ti₁₈O₅₄·x wt%Al₂O₃ (BNT-A) ceramics (x=0, 0.5, 1.0, 1.5, 2.0, 2.5) were prepared by the conventional solid state reaction. The effects of Al₂O₃ on the microstructure and microwave dielectric properties of Ba₄Nd_9.33Ti₁₈O₅₄ (BNT) ceramics were investigated. X-ray diffraction and backscatter electronic images showed that the Al₂O₃ additive gave rise to a second phase BaAl₂Ti₅O₁₄ (BAT). The formation mechanism and grain growth of the BAT phase were first discussed. Dielectric property test revealed that the Al₂O₃ additive had improved the dielectric properties of the BNT ceramics: increased the Q×f value from 8270 to 12,180 GHz and decreased the τ_f value from 53.4 to 11.2 ppm/°C. A BNT-A ceramic with excellent dielectric properties: ε_r=70.2, Q×f=12,180 GHz, τ_f=20 ppm/°C was obtained with 2.0 wt% Al₂O₃ added after sintering at 1320 °C for 4 h.     

Effect of Bi2O3 additives on sintering and microwave dielectric behavior of La(Mg0.5Ti0.5)O3 ceramics

Bi₂O₃ was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics. The sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics is generally high, about 1600 °C. However, the sintering temperature was significantly lowered about 275 °C from 1600 °C to 1325 °C by incorporating in 15 mol% Bi₂O₃ and revealed the optimum microwave dielectric properties of dielectric constant (?_r) value of 40.1, a quality factor (Q × f) value of 60,231 GHz, and the temperature coefficient (τ_f) value of 70.1 ppm/°C. During all addition ranges, the relative dielectric constants (?_r) were different and ranged from 32.0 to 41.9, the quality factors (Q × f) were distributed in the range of 928–60,231 GHz, and the temperature coefficient (τ_f) varies from 0.3 ppm/°C to 70.3 ppm/°C. Noticeably, a nearly zero τ_f can be found for doping 5 mol% Bi₂O₃ sintering at 1325 °C. It implies that nearly zero τ_f can be achieved by appropriately adjusting the amount of Bi₂O₃ additions and sintering temperature for La(Mg_0.5Ti_0.5)O₃ ceramics.     

Low temperature sintering and microwave dielectric properties of Ce2(WO4)3 ceramics

Ce₂(WO₄)₃ ceramics have been synthesized by the conventional solid-state ceramic route. Ce₂(WO₄)₃ ceramics sintered at 1000 °C exhibited ?_r = 12.4, Qxf = 10,500 GHz (at 4.8 GHz) and τ_f = −39 ppm/°C. The effects of B₂O₃, ZnO–B₂O₃, BaO–B₂O₃–SiO₂, ZnO–B₂O₃–SiO₂ and PbO–B₂O₃–SiO₂ glasses on the sintering temperature and microwave dielectric properties of Ce₂(WO₄)₃ were investigated. The Ce₂(WO₄)₃ + 0.2 wt% ZBS sintered at 900 °C/4 h has ?_r = 13.7, Qxf = 20,200 GHz and τ_f = −25 ppm/°C.     

Microwave dielectric properties of BaO-2(1 − x)ZnO-xNd2O3-4TiO2 (x = 0-1.0) ceramics

Microwave dielectric properties of (1 − x)BaZn₂Ti₄O₁₁-xBaNd₂Ti₄O₁₂ (x = 0-1.0) ceramics were investigated by the solid-state reaction with the purpose of finding a microwave ceramics with high dielectric constant (?_r), high quality factor (Q × f) and low temperature coefficient of resonant frequency (τ_f). A two phase system BaZn₂Ti₄O₁₁-BaNd₂Ti₄O₁₂ was formed and SEM photographs show equiaxed BaZn₂Ti₄O₁₁ grains and columnar BaNd₂Ti₄O₁₂ grains. The microwave dielectric properties were strongly determined by the chemical composition. As increasing x from 0 to 1.0, the phase composition varied from pure BaZn₂Ti₄O₁₁, to the two phase system BaZn₂Ti₄O₁₁-BaNd₂Ti₄O₁₂ and then to pure BaNd₂Ti₄O₁₂. Therefore, the ?_r raised from 29.1 to 82.0 and the Q × f values decreased from 54,630 GHz to 8110 GHz, and the τ_f values increased from −29 ppm/°C to 94 ppm/°C. 0.8BaZn₂Ti₄O₁₁-0.2BaNd₂Ti₄O₁₂ ceramics sintered at 1250 °C for 2.5 h had ?_r = 39.1, Q × f = 37,850 GHz and τ_f = −9 ppm/ °C.     

Low temperature cofiring and compatibility with silver electrode of ZnO-SnO2-TiO2-Nb2O5 ceramics with BaCu(B2O5) addition

The effect of BaCu(B₂O₅) (BCB) addition on the sintering temperature and microwave dielectric properties of 2.5ZnO-0.2SnO₂-4.8TiO₂-2.5Nb₂O₅ (ZSTN) has been investigated by the solid-state ceramic route. X-ray diffraction and scanning electron microscopy techniques were used to analysis the structure and microstructure. The microwave dielectric properties were measured by the resonance method. It was found that the addition of BCB can effectively lower the sintering temperature from 1100 °C to 900 °C, and improves the microwave dielectric properties of ZSTN ceramics. The BCB doped ZSTN ceramics can be compatible with Ag electrode, which makes it a promising ceramic for LTCC technology application.     

Effect of Bi2O3 and B2O3 additives on the sintering temperature, microstructure, and microwave dielectric properties for Sm(Mg0.5Ti0.5)O3 ceramics

The microwave dielectric properties of Sm(Mg_0.5Ti_0.5)O₃ incorporated with various amount of Bi₂O₃ and B₂O₃ additives have been investigated systematically. In this study, both Bi₂O₃ and B₂O₃ additives acting as a sintering aid can effectively lower the sintering temperature from 1550 °C to 1300 °C. The ionic radius of Bi³⁺ for a coordination number of 6 is 0.103 nm, whereas the ionic radius of B³⁺ is 0.027 nm. Clearly, the ionic radius of Bi³⁺ is greatly larger than one of B³⁺, which resulted in the specimens incorporated with Bi₂O₃ having larger lattice parameters and cell volume than those incorporated with B₂O₃. The experimental results show that no second phase was observed throughout the entire experiments. Depending on the interfacial tension, the liquid phase may penetrate the grain boundaries completely, in which case the grains will be separated from one another by a thin layer as shown in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with Bi₂O₃. Whereas, in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with B₂O₃, the volume fraction of liquid is high, the grains may dissolve into the liquid phase, and rapidly rearrange, in which case contact points between agglomerates will be dissolved due to their higher solubility in the liquid, leading plate-like shape microstructure.A dielectric constant (?_r) of 29.3, a high Q × f value of 26,335 GHz (at 8.84 GHz), and a τ_f of −32.5 ppm/°C can be obtained for Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 10 mol% Bi₂O₃ sintered at 1300 °C. While Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 5 mol% B₂O₃ can effectively lower temperature coefficient of resonant frequency, which value is −21.6 ppm/°C. The Sm(Mg_0.5Ti_0.5)O₃ ceramic incorporated with heavily Bi₂O₃ and B₂O₃ additives exhibits a substantial reduction in temperature (∼250 °C) and compatible dielectric properties in comparison with that of an un-doped one. This implied that this ceramic is suitable for miniaturization in the application of dielectric resonators and filters by being appropriately incorporated with a sintering aid.     

Low temperature sintering and microwave dielectric properties of Li2ZnTi3O8 ceramics doped with ZnO–La2O3–B2O3 glass

Li₂ZnTi₃O₈ ceramics doped with ZnO–La₂O₃–B₂O₃ glass were prepared by the conventional solid-state ceramic route. The effects of the ZnO–La₂O₃–B₂O₃ glass on the sintering temperature, phase composition, microstructure and microwave dielectric properties of Li₂ZnTi₃O₈ ceramics were investigated. The addition of ZLB glass can reduce the sintering temperature of Li₂ZnTi₃O₈ ceramic from 1075 °C to 925 °C without obvious degradation of the microwave dielectric properties. Only a single phase Li₂ZnTi₃O₈ with cubic spinel structure is formed in Li₂ZnTi₃O₈ ceramic with ZLB addition sintered at 925 °C. Typically, 1.0 wt% ZLB-doped Li₂ZnTi₃O₈ ceramic sintered at 925 °C can reach a maximum relative density of 95.8% and exhibits good microwave dielectric properties of ε_r=24.34, Q×f=41,360 GHz and τ_f=−13.4 ppm/°C. Moreover, this material is compatible with Ag electrode, which makes it a promising candidate for LTCC application.     

Microwave dielectric properties of SnO2-doped CaSiO3 ceramics

SnO₂-doped CaSiO₃ ceramics were successfully synthesized by a solid-state method. Effects of different SnO₂ additions on the sintering behavior, microstructure and dielectric properties of Ca(Sn_1−xSi_x)O₃ (x=0.5–1.0) ceramics have been investigated. SnO₂ improved the densification process and expanded the sintering temperature range effectively. Moreover, Sn⁴⁺ substituting for Si⁴⁺ sites leads to the emergence of Ca₃SnSi₂O₉ phase, which has a positive effect on the dielectric properties of CaO–SiO₂–SnO₂ materials, especially the Qf value. The Ca(Sn_0.1Si_0.9)O₃ ceramics sintered at 1375 °C possessed good microwave dielectric properties: ε_r =7.92, Qf =58,000 GHz and τ_f=−42 ppm/°C. The Ca(Sn_0.4Si_0.6)O₃ ceramics sintered at 1450 °C also exhibited good microwave dielectric properties of ε_r=9.27, Qf=63,000 GHz, and τ_f=−52 ppm/°C. Thus, they are promising candidate materials for millimeter-wave devices.     

Fabrication and electrical properties of Pb(Co1/3Nb2/3)O3 ceramics

Pb(Co_1/3Nb_2/3)O₃ (PCN) ceramics have been produced by sintering PCN powders synthesized from lead oxide (PbO) and cobalt niobate (CoNb₂O₆) with an effective method developed for minimizing the level of PbO loss during sintering. Attention has been focused on relationships between sintering conditions, phase formation, density, microstructural development, dielectric and ferroelectric properties of the sintered ceramics. From X-ray diffraction analysis, the optimum sintering temperature for the high purity PCN phase was found at approximately 1050 and 1100 °C. The densities of sintered PCN ceramics increased with increasing sintering temperature. However, it is also observed that at very high temperature the density began to decrease. PCN ceramic sintered at 1050 °C has small grain size with variation in grain shape. There is insignificant change of dielectric properties with sintering temperature. The P–E hysteresis loops observed at −70 °C are of slim-loop type with small remanent polarization values, which confirmed relaxor ferroelectric behavior of PCN ceramics.     

Microwave dielectric properties of Ba3Ti4−x(Zn1/3Nb2/3)xNb4O21 for low temperature co-fired ceramics

The effects of substitution of (Zn_1/3Nb_2/3) for Ti on the sintering behavior and microwave dielectric properties of Ba₃Ti_4−x(Zn_1/3Nb_2/3)_xNb₄O₂₁ (0 ≤ x ≤ 4) ceramics have been investigated. The dielectric constant (?_r) and the temperature coefficient of the resonant frequency (τ_f) of Ba₃Ti_4−x(Zn_1/3Nb_2/3)_xNb₄O₂₁ ceramics decreased with increasing x. However, the Q × f values enhanced with the substitution of (Zn_1/3Nb_2/3) for Ti. It was found that a small amount of MnCO₃-CuO (MC) and ZnO-B₂O₃-SiO₂ (ZBS) glass additives to Ba₃Ti_4−x(Zn_1/3Nb_2/3)_xNb₄O₂₁ (x = 2) ceramics lowered the sintering temperature from 1250 to 900 °C. And Ba₃Ti_4−x(Zn_1/3Nb_2/3)_xNb₄O₂₁ (x = 2) ceramics with 1 wt% MC and 1 wt% ZBS sintered at 900 °C for 2 h showed excellent dielectric properties: ?_r = 53, Q × f = 14,600 GHz, τ_f = 6 ppm/°C. Moreover, it has a chemical compatibility with silver, which made it as a promising material for low temperature co-fired ceramics technology application.     

Microstructures and dielectric properties of spark plasma sintered Ba0.4Sr0.6TiO3/CaCu3Ti4O12 composite ceramics

(1 − x)Ba_0.4Sr_0.6TiO₃/xCaCu₃Ti₄O₁₂ composite ceramics were prepared by spark plasma sintering. Sintering behavior, microstructures and dielectric properties of the composite ceramics were investigated by XRD, SEM, EDS and dielectric spectrometer. Dense composite ceramics consisting of Ba_0.4Sr_0.6TiO₃ phase and CaCu₃Ti₄O₁₂ phase were prepared at 800 °C for 0 min. The dielectric loss of the composite ceramic decreased with increasing amount of Ba_0.4Sr_0.6TiO₃, and the high dielectric constant were retained. Moreover, the better temperature stability of dielectric constant was obtained. These improvements of dielectric characteristics have great scientific significance for potential application.     

Adjustable dielectric properties of Li2CuxZn1−xTi3O8 (x=0 to 1) ceramics with low sintering temperature

Single-phase dielectric ceramics Li₂Cu_xZn_1−xTi₃O₈ (x=0–1) were synthesized by the conventional solid-state ceramic route. All the solid solutions adopted Li₂MTi₃O₈ cubic spinel structure in which Li/M and Ti show 1:3 order in octahedral sites whereas Li and M are distributed randomly in tetrahedral sites with the degree of Li/M cation mixing varying from 0.5 to 0.3. The substitution of Cu for Zn effectively lowered the sintering temperatures of the ceramics from 1050 to 850 °C and significantly affected the dielectric properties. As x increased from 0 to 0.5, τ_f gradually increased while the dielectric constant (ε_r) and quality factor value (Q×f) gradually decreased, and a near-zero τ_f of 1.6 ppm/°C with ε_r of 25.2, Q×f of 32,100 GHz could be achieved for Li₂Cu_0.1Zn_0.9Ti₃O₈ ceramic sintered at 950 °C, which make it become an attractive promising candidate for LTCC application. As x increases from 0.5 to 1, the dielectric loss significantly increases with AC conductivity increasing up to 2.3×10⁻⁴ S/cm (at 1 MHz).     

Effect of La-doping on the properties of CaCu3Ti4O12 dielectric ceramics

Nano-size Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ (χ = 0.00, 0.05, 0.10, 0.15 and 0.20) precursor powders were prepared via the sol–gel method and the citrate auto-ignition route and then processed into micro-crystal Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ ceramics under heat treatment. Characterization of the as-obtained ceramics with XRD and SEM showed an average grain sizes of ∼1–2 μm, indicating La³⁺ amount to have little impact on grain size. The room-temperature dielectric constant of the Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ ceramics sintered at 1000 °C was of the order of 10³–10⁴ despite the variation of χ values. Compared with CaCu₃Ti₄O₁₂, La³⁺-doped CaCu₃Ti₄O₁₂ showed a flatter dielectric constant curve related to frequency. It was found that the loss tangent of the Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ ceramics was less than 0.20 in ∼600–10⁵ Hz region, which rapidly decreased to a minimum value of 0.03 by La³⁺doping with χ = 0.05. Our measurement of the ceramics conductivities (σ) also indicated that the appropriate introduction of La³⁺ into CaCu₃Ti₄O₁₂ would distinctly result in its dielectric properties.     

Microwave dielectric properties and structure of ZnO-Nb2O5-TiO2 ceramics

Ceramic samples based on ZnO-Nb₂O₅-TiO₂ compositions have been prepared using solid state ceramic route. The work was carried out over a wide range of initial ZnNb₂O₆ and Zn_0.17Nb_0.33Ti_0.5O₂ compounds concentration. The crystal structure and microstructure developments were studied using X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was shown that the phase compositions of the samples present itself a columbite type and mixture of two phases—solid solutions of columbite and rutile types.The sintering behavior, permittivity, its temperature coefficients and quality factor had been characterized for ceramic samples in depending on compositions. The permittivity of the samples in this system is within the limits from 24 to 80, τ_? from 150 to −560 ppm/°C. For the samples with τ_? ∼ 0, ?_r ∼ 43.8 and Q·f = 35000 GHz at f = 9 GHz. The comparatively low sintering temperature (≤1080 °C) and high dielectric properties in microwave range make these ceramics promising for application in electronics.     

Preparation, characterization and dielectric properties of CaCu3Ti4O12 ceramics

CaCu₃Ti₄O₁₂ nano-sized powders were successfully prepared by sol-gel technique and calcination at 600-900 °C. The thermal decomposition process, phase structures and morphology of synthesized powders were characterized by IR, DSC-TG, XRD, TEM, respectively. It was found that the main weight-loss and decomposition of precursors occurred below 450 °C and the complex perovskite phase appeared when the calcination temperature was higher than 700 °C. Using above synthesized powders as starting materials, CCTO-based ceramics with excellent dielectric properties (?₂₅ = 5.9 × 10⁴, tan δ = 0.06 at 1.0 kHz) were prepared by sintering at 1125 °C. According to the results, a conduction mechanism was proposed to explain the origin of giant dielectric constant in CCTO system.     

The effect of Ga addition on the sinterability and microwave dielectric properties of RE3Al5O12 (Tb,Y, Er and Yb) garnet ceramics

The RE₃Al₅O₁₂ (RE=Tb, Y, Er, Yb) ceramics have been prepared by the mixed oxide route and the influence of Ga³⁺ doping on their properties is investigated. The intrinsic Y₃Al₅O₁₂ (YAG) ceramic sintered at 1650 °C for 4 h showed good dielectric properties; (ε_r=10.1, Q_u×f=65,000 GHz, τ_f=−45 ppm/°C). Addition of Ga₂O₃ was found to be beneficial in improving the densification of Tb₃Al₅O₁₂, Er₃Al₅O₁₂ and Yb₃Al₅O₁₂ except Y₃Al₅O₁₂ where Nb₂O₅ is the better choice. Among Ga³⁺ added samples, the composition Yb₃Al₅O₁₂+1 wt% Ga₂O₃ showed good microwave dielectric properties: ε_r=10.3, Q_u×f=50,000 GHz, τ_f=−58 ppm/°C. The Y₃Al₅O₁₂ doped with 1 wt% Nb₂O₅ has ε_r=10.7, Q_u×f=120,000 GHz and τ_f=−45 ppm/°C. The ceramics have good thermal properties (CTE=2–3 ppm/°C, λ=2–12 W/m K).     

Microstructure and dielectric properties control of Ba4(Nd0.7Sm0.3)9.33Ti18O54 microwave ceramics

Microwave ceramics of Ba₄(Nd_0.7Sm_0.3)_9.33Ti₁₈O₅₄ with 0–3 wt% Ag additions were synthesized by a citrate sol–gel method. The BaO–B₂O₃–SiO₂ glass was also added into the sol–gel derived BNST ceramic powders as sintering aids. The undoped, Ag- and BaBS-doped samples can be sintered at 1250 °C, 1150 °C and 1000 °C, respectively. The microstructure and dielectric properties were then controlled by doping Ag or BaBS glass. Near isoaxial grains with about 250 nm and typical columnar grains were obtained for the silver-doped and BaBS-doped samples, respectively. For the <1 wt% silver-doped samples, the dielectric constant and Q × f retained unaltered but τ_f decreased from 9 ppm/°C to 1.4 ppm/°C. With increasing silver content from 1 wt% to 3 wt%, the dielectric constant and τ_f significantly increased but Q × f decreased. For the BaBS-doped samples, both dielectric constant and Q × f decreased but τ_f increased with increasing BaBS content.     

Effects of Al2O3 addition on the sintering behavior and microwave dielectric properties of CaSiO3 ceramics

The effects of Al₂O₃ addition on the densification, structure and microwave dielectric properties of CaSiO₃ ceramics have been investigated. The Al₂O₃ addition results in the presence of two distinct phases, e.g. Ca₂Al₂SiO₇ and CaAl₂Si₂O₈, which can restrict the growth of CaSiO₃ grains by surrounding their boundaries and also improve the bulk density of CaSiO₃-Al₂O₃ ceramics. However, excessive addition (≥2 wt%) of Al₂O₃ undermines the microwave dielectric properties of the title ceramics since the derived phases of Ca₂Al₂SiO₇ and CaAl₂Si₂O₈ have poor quality factor. The optimum amount of Al₂O₃ addition is found to be 1 wt%, and the derived CaSiO₃-Al₂O₃ ceramic sintered at 1250 °C presents improved microwave dielectric properties of ?_r = 6.66 and Q × f = 24,626 GHz, which is much better than those of pure CaSiO₃ ceramic sintered at 1340 °C (Q × f = 13,109 GHz).     

Effects of CaTiO3 addition on the densification and microwave dielectric properties of BiSbO4 ceramics

In this study, the effects of CaTiO₃ addition on the sintering characteristics and microwave dielectric properties of BiSbO₄ were investigated. Pure BiSbO₄ achieved a sintered density of 8.46 g/cm³ at 1100 °C. The value of sintered density decreased with increasing CaTiO₃, and sintering at a temperature higher than 1100 °C led to a large weight loss (>2 wt%) caused by the volatile nature of the compound. Samples either sintered above 1100 °C or with a CaTiO₃ content exceeding 3 wt% showed poor densification. SEM micrographs revealed microstructures with bimodal grain size distribution. The size of the smaller grains ranged from 0.5 to 1.2 μm and that of the larger grains between 3 and 7 μm. The microwave dielectric properties of the (1−x) BiSbO_4−x CaTiO₃ ceramics are dependent both on the x value and on the sintering temperature. The 99.0 wt% BiSbO₄–1.0 wt% CaTiO₃ ceramic sintered at 1100 °C reported overall microwave dielectric properties that can be summarized as ε_r≈21.8, Q×f≈61,150 GHz, and τ_f≈−40.1 ppm/°C, all superior to those of the BiSbO₄ ceramics sintered with other additives.     

Sintering of glass-added BaZn1/3Nb2/3O3 ceramics

The complex perovskite oxide Ba(Zn_1/3Nb_2/3)O₃ (BZN) has been studied for its attractive dielectric properties which place this material interesting for applications as multilayer ceramics capacitors or hyperfrequency resonators. This material is sinterable at low temperature with combined glass phase–lithium salt additions, and exhibits, at 1 MHz very low dielectric losses combined with relatively high dielectric constant and a good stability of this later versus temperature. The 2 wt.% of ZnO–SiO₂–B₂O₃ glass phase and 1 wt.% of LiF-added BZN sample sintered at 900 °C exhibits a relative density higher than 95% and attractive dielectric properties: a dielectric constant ?_r of 39, low dielectrics losses (tan(δ) < 10⁻³) and a temperature coefficient of permittivity τ_? of 45 ppm/°C⁻¹. The 2 wt.% ZnO–SiO₂–B₂O₃ glass phase and 1 wt.% of B₂O₃-added BZN sintered at 930 °C exhibits also attractive dielectric properties (?_r = 38, tan(δ) < 10⁻³) and it is more interesting in terms of temperature coefficient of the permittivity (τ_? = −5 ppm/°C). Their good dielectric properties and their compatibility with Ag electrodes, make these ceramics suitable for L.T.C.C applications.