High-quality c-axis oriented non-vacuum Er doped ZnO thin films

Preparation, growth, structure and optical properties of high-quality c-axis oriented non-vacuum Er doped ZnO thin films were studied. Zn_1−xEr_xO (x=0.0, 0.01, 0.02, 0.04, and 0.05) precursor solutions were prepared by sol–gel synthesis using Zn, and Er based alkoxide which were dissolved into solvent and chelating agent. Zn_1−xEr_xO thin films with different Er doping concentration were grown on glass substrate using sol–gel dip coating. Thin films were annealed at 600 °C for 30 min, and tried to observe the effect of doping ratio on structural and optical properties. The particle size, crystal structure, surface morphologies and microstructure of all samples were characterized by X-Ray diffraction (XRD) and Scanning Electron Microscope (SEM). The UV–vis spectrometer measurements were carried out for the optical characterizations. The surface morphology of the Zn_1−xEr_xO films depend on substrate nature and sol–gel parameters such as withdrawal speed, drying, heat treatment, deep number (film thickness) and annealing condition. Surface morphologies of Er doped ZnO thin films were dense, without porosity, uniform, crack and pinhole free. XRD results showed that, all Er doped ZnO thin films have a hexagonal structure and (002) orientation. The optical transmittance of rare earth element (Er) doped ZnO thin films were increased. The Er doped ZnO thin films showed high transparency (>85) in the visible region (400–700 nm).     

Schottky barrier effect of ZnO modified methyl glycol thin films for detection of hydrogen sulfide gas

Highly nanocrystalline ZnO modified methyl glycol thin films have been deposited on a p-type silicon substrate via the sol–gel spin coating manner. The morphology of the as-deposited film was scrutinized using scanning electron microscopy. I–V characteristics of the as-prepared ZnO film under vacuum and in open air were monitored. The results showed that the ZnO films have a barrier height of 0.38 eV under vacuum and 0.62 eV in open air. The Schottky barrier height between ZnO grains was determined for different reducing gases. The ZnO film showed high sensitivity to H₂S gas compared with other reducing gases due to the reduction of barrier height between ZnO grains. The as-prepared ZnO film was annealed at four different temperatures. X-ray diffraction manifested that the wurtzite hexagonal structure of ZnO deviated from ideality at annealing temperature greater than 650 °C. The barrier height of ZnO film decreased due to the increase of annealing temperature up to 650 °C and then decreased. The results also confirmed that the change of barrier height strongly affected the sensitivity of ZnO film.     

Effect of NiS addition on nitridation of alumina to aluminum nitride using polymeric carbon nitride as a nitridation reagent

We investigated the effect of adding nickel(II) sulfide (NiS) on nitridation of alumina (Al₂O₃) to aluminum nitride (AlN) using polymeric carbon nitride (PCN), which was synthesized by polymerization of dicyandiamide at 500 °C. The product powders obtained from nitridation of a mixture of δ-Al₂O₃ and NiS powders (mole ratio of 1:0.01) at various reaction temperatures were characterized by powder X-ray diffraction, ²⁷Al magic-angle spinning nuclear magnetic resonance, and Raman spectroscopy. δ-Al₂O₃ began to convert to AlN at 900 °C and completely converted to AlN at 1300 °C. The as-synthesized sample powders contained nitrogen-doped carbon microtubes (N-doped CMTs) with a length of several tens of mm and thickness of ca. 3 µm. The addition of NiS to δ-Al₂O₃ resulted in the enhancement of the amount of N-doped CMTs and nitridation rate, which might be due to the catalytic action of Ni particles on the thermal decomposition of vaporized PCN. The change in Raman spectra with reaction temperatures indicated that the crystallinity of N-doped CMTs was increased by calcining at higher reaction temperatures.     

Effect of heterojunction on photocatalytic properties of multilayered ZnO-based thin films

In the present study, the effects of the heterojunctions on the optical and structural characteristics and the resulting photocatalytic properties of multilayered ZnO-based thin films were investigated. The junctions were composed of semiconducting ZnO nano-porous films coated on the In₂O₃ and SnO₂ counterpart layers. The multilayered ZnO films based on the triple-layered Ag-doped indium oxide (AIO)/tin oxide (TO)/zinc oxide (ZnO), indium oxide (IO)/Ag-doped tin oxide (ATO)/zinc oxide (ZnO), indium oxide (IO)/tin oxide (TO)/zinc oxide (ZnO) and tin oxide (TO)/indium oxide (IO)/zinc oxide (ZnO) have been fabricated by subsequent sol–gel dip coating. Their structural and optical properties combined with photocatalytic characteristics were examined toward degradation of Solantine Brown BRL (C.I. Direct Brown), an azo dye using in Iran textile industries as organic model under UV light irradiation. Effects of operational parameters such as initial concentration of azo dye, irradiation time, solution pH, absence and presence of Ag doping and consequent of sublayers on the photodegradation efficiencies of ZnO nultilayered thin films were also investigated and optimum conditions were established. It was found that the photocatalytic degradation of azo dye on the composite films followed pseudo-first order kinetics. Photocatalytic activity of AIO/TO/ZnO interface composite film was higher compared with other films and the following order was observed for films activities: AIO/TO/ZnO > IO/TO/ZnO > ATO/IO/ZnO > TO/IO/ZnO. Differences in the film efficiencies can be attributed to differences in crystallinity, interfacial lattice mismatch, and surface morphology. Besides, the presence of Ag doping between layers that may act as trap for electrons generated in the ZnO over layer thus preventing electron–hole recombination.     

The microstructure and properties of energetically deposited carbon nitride films

The intrinsic stress, film density and nitrogen content of carbon nitride (CN_x) films deposited from a filtered cathodic vacuum arc were determined as a function of substrate bias, substrate temperature and nitrogen process pressure. Contour plots of the measurements show the deposition conditions required to produce the main structural forms of CN_x including N-doped tetrahedral amorphous carbon (ta-C:N) and a variety of nitrogen containing graphitic carbons. The film with maximum nitrogen content (~ 30%) was deposited at room temperature with 1.0 mTorr N₂ pressure and using an intermediate bias of − 400 V. Higher nitrogen pressure, higher bias and/or higher temperature promoted layering with substitutional nitrogen bonded into graphite-like sheets. As the deposition temperature exceeded 500 °C, the nitrogen content diminished regardless of nitrogen pressure, showing the meta-stability of the carbon–nitrogen bonding in the films. Hardness and ductility measurements revealed a diverse range of mechanical properties in the films, varying from hard ta-C:N (~ 50 GPa) to softer and highly ductile CN_x which contained tangled graphite-like sheets. Through-film current–voltage characteristics showed that the conductance of the carbon nitride films increased with nitrogen content and substrate bias, consistent with the transition to more graphite-like films.     

Aqueous chemical route deposition of nanocrystalline ZnO thin films as acetone sensor: Effect of molarity

Nanocrystalline ZnO thin films were deposited onto glass substrate using a simple and inexpensive aqueous chemical method at low temperature (90 °C). The concentration of precursor solution was varied in order to study its effect on structural, morphological, and gas response properties. Field-emission scanning electron microscopy (FESEM) images indicate the growth of ZnO with hexagonal shaped nanostructure. Further these films were used to explore gas response properties towards acetone, propanol and ethanol vapors. The sensor response was found to be decreased with increase in precursor concentration. The highest sensor response of 92% was observed towards acetone for the film deposited at 0.05 M at an operating temperature of 350 °C. The higher vapor response towards acetone is attributed to size and surface morphology of the film deposited at 0.05 M.     

Structural and optical studies on sol–gel derived ZnO thin films by excimer laser annealing

High-quality polycrystalline ZnO thin films were deposited onto alkali-free glasses at a temperature of 300°C in air ambience by combining sol–gel spin coating and KrF excimer laser annealing. The effects of laser irradiation energy density on the crystallization, microstructure, surface morphology, and optical transmittance of as-prepared ZnO thin films were investigated and compared to the results of thermally annealed ZnO thin films. The crystallinity level and average crystallite size of laser annealed ZnO thin films increased as laser energy density increased. The crystallinity levels and average crystallite size of excimer laser annealed (ELA) thin films were greater than those of the thermally annealed (TA) thin films. However, laser annealed thin films had abnormal grain growth when irradiation energy density was 175 mJ/cm². Experimental results indicated that the optimum irradiation energy density for excimer laser annealing of ZnO sol–gel films was 150 mJ/cm². The ELA 150 thin films had a dense microstructure, an RMS roughness value of 5.30 nm, and an optical band gap of 3.38 eV, close to the band gap of a ZnO crystal (3.4 eV).     

Studies on chemical bath deposited SnS2 films for Cd-free thin film solar cells

Tin disulfide (SnS₂) is a simple binary metal chalcogenide and it has been proposed as a promising buffer material for Cd-free thin film solar cells. The present work explores the deposition of SnS₂ films by a facile chemical bath deposition at different deposition times in the range of 30–120 min. The effect of deposition time on the structural, optical and electrical properties was investigated. The as-grown SnS₂ films showed a hexagonal crystal structure with a high intensity (001) peak at 15.03°. The films showed shuttle shaped grains that were uniformly distributed across the surface of the substrate. The films showed an optical energy band gap in the range of 2.95–2.80 eV. PL spectra showed a strong emission peak in the wavelength range, 410–460 nm with the variation of deposition time. The SnS₂ films prepared at a deposition time of 90 min showed good crystallinity and morphology with low resistivity of 11.2 Ω-cm. A solar cell with device structure of Mo/SnS/SnS₂/i-ZnO/Al: ZnO/Ni/Ag was fabricated. The fabricated solar cell showed an efficiency of 0.91%, which validate the photovoltaic performance of SnS₂ films.     

Synthesis and enhanced gas sensing properties of flower-like ZnO/α-Fe2O3 core-shell nanorods

This paper reports a facile two-step synthesis route for the preparation of flower-like ZnO/α-Fe₂O₃ nanorods (NRs). Flower-like ZnO NRs with the average diameter about 810 nm and length about 4.5 µm were firstly synthesized via a chemical solution method, and then ZnO NRs was coated with a continuous α-Fe₂O₃ layer to form ZnO/α-Fe₂O₃ core-shell structure through an ionic-layer adsorption and reaction method. The gas-sensing results show that the ZnO/α-Fe₂O₃ NRs exhibit excellent sensitivity, selectivity, and response-recovery capacity to ethanol vapor at a low optimum temperature of 240 °C. In particular, compared with pure ZnO NRs and α-Fe₂O₃ nanoparticles (NPs), the ZnO/α-Fe₂O₃ NRs show an obvious improvement in gas sensing properties. The substantial improvement of sensing properties may be attributed to the unique microstructure and heterojunction formed between ZnO and α-Fe₂O₃.     

Effect of oxygen pressure on the p-type conductivity of Ga,P co-doped ZnO thin film grown by pulsed laser deposition

The effect of the oxygen partial pressure on the conductivity of (Ga, P) co-doped ZnO thin films (ZnO:Ga_0.01P_0.02, ZnO:Ga_0.01P_0.04) was investigated. The thin films were grown by using the pulsed laser deposition (PLD) method. As the oxygen partial pressure increased from 1 mTorr to 200 mTorr, the electron carrier concentration of the ZnO:Ga_0.01P_0.04 thin films decreased. Above 200 mTorr, however, the electron carrier concentration increased and a transition from n-type to p-type conductivity was observed. On the other hand, in the case of the ZnO:Ga_0.01P_0.02 thin films, their electron carrier concentration continuously decreased as the oxygen partial pressure increased from 1 to 500 mTorr, showing the typical n-type semi-conductive characteristics. The X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) analyses were used to characterize the n-type to p-type conductivity transitions with increasing oxygen partial pressure.     

Characterization and gas sensing properties of bead-like ZnO using multi-walled carbon nanotube templates

We report bead-like ZnO nanostructures for gas sensing applications, synthesized using multi-walled carbon nanotube (MWCNT) templates. The ZnO nanostructures are grown following a two-step process: in the first, ZnO nanoparticles are synthesized on MWCNTs by thermal evaporation of a Zn powder; and in the second, the hybrid nanostructures are heat-treated at 800 °C. Scanning and transmission electron microscopy images indicate that the bead-like ZnO nanostructures have surface protuberances with nanoparticle sizes ranging from 20 to 60 nm, and a well-crystallized hexagonal structure. Gas sensors based on multiple-networked bead-like ZnO showed considerably enhanced electrical responses and better stability to both oxidizing (NO₂) and reducing (CO) gases compared with previously reported nanostructured gas sensors, even if the response to CO gas was slow to increase. Both the NO₂ and CO gas sensing properties increased dramatically when the working temperature was increased up to 300 °C. The response sensitivities measured were 2953%, 5079%, 9641%, 3568%, and 3777% to 20 ppm NO₂ at 200, 250, 300, 350 and 400 °C, respectively. For CO gas on the other hand, the response sensitivities were 107%, 110%, 114%, 118%, and 122% at 5, 10, 20, 50, and 100 ppm concentrations, respectively. For concentrations between 5 and 20 ppm, the recovery time of the oxidizing gas was much shorter than the response time. The origin of the NO₂/CO gas sensing mechanism of the bead-like ZnO nanostructures is discussed.     

3D hollow carbon nanotetrapods synthesized by three-step vapor phase transport

In this work, novel 3D hollow carbon nanotetrapod structures are synthesized by all-vapor-phase process and its electrical properties are studied for electron field emission applications. The fabrication involves three main stages conducted sequentially in a single tube furnace, including in situ ZnO nanotetrapod synthesis, carbon chemical vapor deposition with acetylene/hydrogen (C₂H₂/H₂) mixture and vapor-phase ZnO etching. The effects of C₂H₂/H₂ gas flow composition, synthesis time and temperature on structural morphology of 3D carbon nanostructures and growth mechanisms are systematically investigated. The optimal condition that yields unique 3D hollow carbon nanotetrapod structures includes synthesis time of 3 min, temperature of 700 °C, C₂H₂ flow rate of 3 sccm, H₂ flow rate of 24 sccm for 40-mm-tube-inner diameter. Insufficient synthesis time or C₂H₂ flow rate, excessive H₂ flow rate and non-optimal temperature leads to very thin and distorted carbon nanotetrapod structures while excessive time or C₂H₂ flow rate entails 3D solid carbon nanotetrapod structures. For electrical properties, the nanostructures exhibit decreasing electrical conductivity and improved emission performances with decreasing synthesis time or C₂H₂ flow rates and increasing H₂ flow rate. The optimal 3D hollow carbon nanostructure offers excellent field-emission performances with low turn-on electric field of 1.2 V/μm and high field-enhancement factor of ∼7620.     

Semiconducting amorphous carbon thin films for transparent conducting electrodes

Semiconducting amorphous carbon thin films were directly grown on SiO₂ substrate by using chemical vapor deposition. Raman spectra and transmission electron microscopy image showed that the a-C films have a short-range ordered amorphous structure. The electrical and optical properties of the a-C thin films were investigated. The films have sheet resistance of 3.7 kΩ/□ and high transmittance of 82%. They exhibit metal-oxide-semiconductor field effect transistor mobility of 10–12 cm² V⁻¹ s⁻¹ at room temperature, which is comparable to previous reported mobility of amorphous carbon. The optical band gap was calculated by Tauc’s relationship and photoluminescence spectra showed that the films are semiconductor with an optical band gap of 1.8 eV. These good physical properties make the a-C films a candidate for the application of transparent conducting electrodes.     

Improved photoluminescence emission and gas sensor properties of ZnO thin films

In this article, we report a comparative study of the influence of pressure-assisted (1.72 MPa) versus ambient pressure thermal annealing on both ZnO thin films treated at 330 °C for 32 h. The effects of pressure on the structural, morphological, optical, and gas sensor properties of these thin films were investigated. The results show that partial preferential orientation of the wurtzite-structure ZnO thin films in the [002] or [101] planes is induced based on the thermal annealing conditions used (i.e., pressure assisted or ambient pressure). UV–vis absorption measurements revealed a negligible variation in the optical -band gap values for the both ZnO thin films. Consequently, it is deduced that the ZnO thin films exhibit different distortions of the tetrahedral [ZnO₄] clusters, corresponding to different concentrations of deep and shallow level defects in both samples. This difference induced a variation of the interface/bulk-surface, which might be responsible for the enhanced optical and gas sensor properties of the pressure-assisted thermally annealed film. Additionally, pressure-assisted thermal annealing of the ZnO films improved the H₂ sensitivity by a factor of two.     

Heteroatom-doped carbon gels from phenols and heterocyclic aldehydes: Sulfur-doped carbon xerogels

Sulfur-doped carbon xerogels were obtained through carbonization of resorcinol/2-thiophenecarboxaldehyde organic gels. The acid-catalyzed sol–gel polymerization of resorcinol and 2-thiophenecarboxaldehyde leads to organic gels whose morphology and texture is dependent on the amount of catalyst used. As a result, monolithic organic gels with sulfur content of up to 19.6 wt.% and easily tailored properties can be produced. After carbonization, a substantial amount of sulfur is retained and porous carbon xerogels with S-content of up to 10 wt.% are produced (at 800 °C). Depending on the sol–gel synthesis conditions, monolithic S-doped carbon xerogels with controllable and enhanced mesoporosity, surface areas of up to 670 m²/g and enhanced mechanical integrity were obtained. Additional KOH activation of the organic or carbon xerogels enables production of micro–mesoporous carbons with surface areas of up to 2550 m²/g while retaining over 5 wt.% of sulfur. Preliminary CO₂ adsorption measurements were performed. On the basis of resorcinol/2-thiophenecarboxaldehyde gel synthesis a more general approach towards heteroatom-doped carbon gels is proposed: sol–gel polymerization of phenols and heterocyclic aldehydes. Thus a variety of heteroatom-doped porous carbon materials with a tailored pore texture and morphology are available via this procedure.     

Electromagnetic properties of SiO2 reinforced with both multi-wall carbon nanotubes and ZnO particles

SiO₂ reinforced with both multi-wall carbon nanotubes (MWCNTs) and ZnO particles was prepared. Owing to the consumption of an amorphous carbon layer on the outer surface of MWCNTs and the generation of oxygen vacancies in ZnO during sintering, the contact resistance between MWCNTs is lowered and a higher concentration of charge carriers is produced in ZnO. The permittivity of the composite is improved by both changes. The composite containing 15 wt% ZnO particles and 3 wt% MWCNTs exhibits a wider effective absorption bandwidth and lower minimum reflection coefficient than both SiO₂ reinforced with 15 wt% ZnO particles and SiO₂ reinforced with 3 wt% MWCNTs.     

The ultraviolet emission mechanism of ZnO thin film fabricated by sol–gel technology

ZnO thin films were successfully deposited on SiO₂/Si substrate by sol–gel technology. The as-grown ZnO thin films were annealed under an ambient atmosphere from 600 to 900 °C by rapid thermal annealing (RTA) process. X-ray diffraction and scanning electron microscopy analyses reveal the physical structures of ZnO thin films. From PL measurement, two ultraviolet (UV) luminescence bands were obtained at 375 and 380 nm, and the intensity became stronger when the annealing temperature was increased. The strongest UV light emission appeared at annealing temperature of 900 °C. The chemical bonding state in ZnO films was investigated by using X-ray photoelectron spectrum. The mechanism of UV emission was also discussed.     

Synthesis of the hexagonal pillar shaped ZnOs using a hydrothermal method

This study focused on the stable synthesis to obtaining nanometer sized hexagonal pillar-like ZnO, which can be utilized as LED (light emission device) materials. Various zinc oxides were successfully synthesized by hydrothermal treatment at 150, 200 and 250 °C for 8 h, with their morphologies controlled at pHs 9, 11 and 13, by the addition of ammonium hydroxide. The SEM (scanning electron microscopy) results reveal that the as-prepared particles at pH 13 and 200 °C for 8 h were a complete hexagonal pillar shaped. On the other hand, the morphology was flower shaped at lower pH and temperature. This result indicates that hexagonal pillar shaped ZnO can be easily formed higher pH and temperature reaction conditions. Two types of emitting band for all ZnO samples were observed at around 400 nm (violet) and above 550 nm (green) in the photoluminescence (PL) spectra.     

Preparation and carbon dioxide uptake capacity of N-doped porous carbon materials derived from direct carbonization of zeolitic imidazolate framework

The preparation, characterization and CO₂ uptake performance of N-doped porous carbon materials and composites derived from direct carbonization of ZIF-8 under various conditions are presented for the first time. It is found that the carbonization temperature has remarkable effect on the compositions, the textural properties and consequently the CO₂ adsorption capacities of the ZIF-derived porous materials. Changing the carbonization temperature from 600 to 1000 °C, the composites and the resulting porous carbon materials possess a tuneable nitrogen content in the range of 7.1–24.8 wt%, a surface area of 362–1466 m² g⁻¹ and a pore volume of 0.27–0.87 cm³ g⁻¹, where a significant proportion of the porosity is contributed by micropores. These N-doped porous composites and carbons exhibit excellent CO₂ uptake capacities up to 3.8 mmol g⁻¹ at 25 °C and 1 bar with a CO₂ adsorption energy up to 26 kJ mol⁻¹ at higher CO₂ coverages. The average adsorption energy for CO₂ is one of the highest ever reported for any porous carbon materials. Moreover, the influence of textural properties on CO₂ capture performance of the resulting porous adsorbents has been discussed, which may pave the way to further develop higher efficient CO₂ adsorbent materials.     

Thermal annealing induced mazy structure on MoO3 thin films and their high sensing performance to NO gas at room temperature

MoS₂ thin films were prepared by radio frequency (RF) magnetron sputtering and then annealed in air. X-ray diffraction (XRD), field-emission electron scanning microscopy (FESEM) and transmission electron microscopy (TEM) were adopted to characterize the phase structure and surface morphology. Interestingly, upon thermal annealing in air, MoS₂ thin films changed into α-MoO₃ with mazy morphology, and the thin films were covered by MoO₃ nano-sheets with a length of 30–50 nm and a width of 10 nm. α-MoO₃ thin films with mazy morphology showed excellent response to NO gas at room temperature. The response of 5% and 92% was obtained at 5 ppm and 200 ppm, respectively, and the response and recovery times were 30 s and 1500 s. Moreover, the mazy structure of MoO₃ exhibited good selectivity to NO gas with respect to SO₂, NH₃ and H₂ gases. The high surface-to-volume ratio was the dominant factor for high sensing performance.