Sc2W3O12薄膜制备及其负热膨胀性能

采用脉冲激光沉积法制备了斜方相Sc₂W₃O₁₂薄膜。利用X射线衍射仪(XRD)和场发射扫描电镜(FESEM)对Sc₂W₃O₁₂靶材和Sc₂W₃O₁₂薄膜组分、表面形貌和靶材断面形貌进行表征, 研究衬底温度与氧分压对薄膜制备的影响。采用变温XRD和热机械分析仪(TMA)分析了Sc₂W₃O₁₂陶瓷靶材和薄膜的负热膨胀特性。实验结果表明: 经1000℃烧结6 h得到结构致密的斜方相Sc₂W₃O₁₂陶瓷靶材, 其在室温到600℃的温度范围内平均热膨胀系数为-5.28×10^-6 K^-1。在室温到500℃衬底温度范围内脉冲激光沉积制备的Sc₂W₃O₁₂薄膜均为非晶态, 随着衬底温度的升高, 薄膜表面光滑程度提高; 随着沉积氧压强增大, 表面平整性变差。非晶膜经1000℃退火处理7 min后得到斜方相Sc₂W₃O₁₂多晶薄膜, 在室温到600℃温度区间内, Sc₂W₃O₁₂薄膜的平均热膨胀系数为-7.17×10^-6 K^-1。     

Te与In共掺杂对Cu2SnSe3热电性能的影响

Cu₂SnSe₃基化合物作为一种绿色环保的新型热电材料, 近年受到了研究者的广泛关注。然而, 本征Cu₂SnSe₃基化合物载流子浓度低、电性能较差。为优化Cu₂SnSe₃化合物的电热输运性能, 本研究采用熔融、退火结合放电等离子烧结技术制备了一系列Cu₂SnSe_3-xTe_x (x=0~0.2)和Cu₂Sn_1-yIn_ySe_2.9Te_0.1 (y=0.005~0.03)样品, 研究了Te固溶和In掺杂对材料电热输运性能的影响。Te在Cu₂SnSe_3-xTe_x (x=0~0.2)化合物中的固溶度为0.10, Te固溶显著增加了材料的载流子有效质量, 从本征Cu₂SnSe₃样品的0.2m_e增加到Cu₂SnSe_2.9Te_0.1样品的0.45m_e, 显著提高了材料的功率因子, Cu₂SnSe_2.99Te_0.01样品在300 K下获得最大功率因子为1.37 μW·cm^-1·K^-2。为了进一步提高材料的电传输性能, 本研究以Cu₂SnSe_2.9Te_0.1为基体并选取In在Sn位掺杂。In掺杂将Cu₂SnSe₃基化合物的载流子浓度从5.96×10¹⁸ cm^-3 (Cu₂SnSe_2.9Te_0.1)显著提高到2.06×10²⁰ cm^-3 (Cu₂Sn_0.975In_0.025Se_2.9Te_0.1)。调控载流子浓度促进了材料多价带参与电传输, 材料的电导率和载流子有效质量显著增加, 功率因子得到大幅度提升, 在473 K下Cu₂Sn_0.995In_0.005Se_2.9Te_0.1化合物获得最大功率因子为5.69 μW·cm^-1·K^-2。由于电输运行性能显著提升和晶格热导率降低, Cu₂Sn_0.985In_0.025Se_2.9Te_0.1样品在773 K下获得最大ZT为0.4, 较本征Cu₂SnSe₃样品提高了4倍。     

电纺La2O3-CeO2纳米纤维的除氟性能

纳米双金属氧化物作为除氟剂具有广泛的应用前景。以六水合硝酸铈和六水合硝酸镧为原料，聚丙烯腈(PAN)为模板，通过静电纺丝技术与煅烧相结合制备La₂O₃-CeO₂纳米纤维，利用TEM、SEM-EDS、BET、FTIR和XRD对La₂O₃-CeO₂纳米纤维的形貌和结构进行表征。探究了La₂O₃-CeO₂纳米纤维对氟离子吸附性能，研究了pH、吸附质(F-)初始浓度、吸附时间、La₂O₃-CeO₂纳米纤维投加量和共存阴离子等对除氟效率的影响。研究结果表明，La₂O₃-CeO₂纳米纤维的比表面积为31.04 m²·g^-1。pH为3时，La₂O₃-CeO₂纳米纤维的...     

研磨-焙烧法制备La2O3/BiOCl复合光催化剂及其对高浓度染料降解性能

首先利用沉淀法合成了BiOCl纳米片, 然后利用研磨-焙烧法将La₂O₃纳米颗粒复合到BiOCl纳米片中, 制备了一系列La₂O₃/BiOCl复合光催化剂(La₂O₃: 1wt%、2wt%、4wt%、8wt%)。运用X射线粉末衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)、光电子能谱(XPS)、紫外-可见漫反射光谱(UV-Vis DRS)、傅里叶红外光谱(FT-IR)和光致发光(PL)谱等对样品的晶相、光吸收和表面性能等进行了表征。以紫外灯(λ = 254 nm)为光源, 评价了所制备样品光催化降解高浓度染料酸性橙II(40×10^-6)的活性。结果表明, 经过研磨-焙烧后该系列催化剂均具有较好的结晶性能, 同时2~5 nm的La₂O₃纳米粒子粘附在BiOCl纳米片表面。200℃焙烧制备的1wt%La₂O₃/BiOCl催化剂具有丰富的表面羟基, 对染料表现出较强的吸附性能。该催化剂表现了最高的光催化活性, 活性为纯BiOCl的2.4倍。另外, La₂O₃/BiOCl中的La³⁺提供的氧化-还原势阱可能捕获光生电子, 从而阻止了光生电子(e^-)和空穴(h⁺)的复合, 有利于光催化活性的提高。     

低温制备不锈钢表面含铜磷酸铝涂层及抗菌性能研究

利用磷酸二氢铝的固化反应在316不锈钢表面制备了不同含量Cu²⁺的磷酸铝涂层(Cu: Al=0.025、0.05、0.1)。差示扫描量热分析及X射线衍射表明涂层材料可在≤250℃下固化, 主要固化产物为AlH₂P₃O₁₀∙2H₂O、AlPO₄和Al₈H₁₂(P₂O₇)₉。Cu²⁺加入后产生了含铜的新相Cu₂P₂O₇。与大肠杆菌共培养12 h后各含Cu²⁺涂层表现出抗菌性, 且抗菌能力与Cu²⁺含量正相关; 接触24 h后, 所有含Cu²⁺涂层表面均无活菌检出。菌悬液中加入EDTA有效抑制了涂层抗菌活性, 表明涂层抗菌性能来自表面溶出的Cu²⁺。拉伸试验表明涂层结合强度在14.5~18.1 MPa范围。与无涂层的不锈钢相比, 涂覆涂层后样品的腐蚀电流密度下降了2个数量级。     

简单的溶胶–凝胶法制备致密的铜锌锡硫硒薄膜

采用溶胶–凝胶后硒化法制备了铜锌锡硫硒薄膜, 其薄膜表面平整、无裂纹。通过简化铜锌锡硫前驱体溶胶的制备以及后退火时避免使用硫化氢气体（H₂S）等方法使铜锌锡硫硒薄膜的制备工艺得到简化。选用低毒有机物乙二醇为溶剂,Cu(CH₃COO)₂、Zn(CH₃COO)₂、SnCl₂•2H₂O和硫脲为原料, 制备铜锌锡硫前驱体溶胶。XRD、Raman、EDX和SEM 分析表明制备的铜锌锡硫硒薄膜为锌黄锡矿结构, 所有薄膜均贫铜富锌, 用0.2 g硒粉、硒化20 min得到的铜锌锡硫硒薄膜其结晶较好, 表面晶粒可达1.0 μm左右。透射光谱分析结果表明, 随硒含量的增加, 铜锌锡硫硒薄膜的光学带隙从1.51 eV减小到1.14 eV。     

前驱膜叠层及硒化升温方式对铜铟镓硒薄膜性能的影响

以钠钙玻璃为衬底,利用两靶磁控溅射的方法,选择不同的叠层方式制备铜铟镓前驱膜.然后将前驱膜放入特制的真空炉中选择不同的升温方式进行硒化退火,得到四元化合物铜铟镓硒半导体纳米薄膜,对薄膜进行各项表征.分析了前驱膜叠层及硒化升温方式对铜铟镓硒(CIGS)薄膜性能的影响,证明In/CuGa/In多层前驱膜先在250℃恒温20min加热,再升温至560℃硒化温度30min,能制备出较高质量黄铜矿结构的多晶薄膜,适合做CIGS太阳能电池吸收层材料.     

原位晶化法在铜网上快速合成Cu3(BTC)2基膜及其催化性能研究

在常温条件下, 采用原位晶化法在铜网载体上合成了包含Keggin型杂多酸H₃PMo₁₂O₄₀的Cu₃(BTC)₂(BTC= 1, 3, 5-均苯三甲酸)基金属-有机框架膜材料。利用XRD、FT-IR和SEM等方法对膜的结构、成分及形貌进行了表征。含磷钼杂多酸的Cu₃(BTC)₂基薄膜均匀地覆盖在铜丝表面上, 膜厚度约为8 μm, 晶体尺寸均一, 且融合生长。合成过程中, 经过预处理的铜网本身既是载体又是铜源。研究发现加入H₂O₂能有效地促进膜的合成。铜网负载的薄膜作为非均相催化剂, 在H₂O₂氧化降解罗丹明B的化学反应中表现出很高的催化活性, 反应100 min后, 降解率可达98%。膜催化剂重复使用三次, 均表现出较高的催化性能。     

——————————CaSi2O2N2:Eu2+中空荧光纤维的制备及其发光性能研究

采用静电纺丝与气相还原氮化相结合的方式制备了用于白光LED的CaSi₂O₂N₂:Eu²⁺荧光纤维。通过调节纺丝溶液溶剂的配比, 得到了空心结构的Ca-Si-O-Eu纳米纤维和CaSi₂O₂N₂:Eu²⁺荧光纳米纤维。样品在微观上保持中空纤维结构, 宏观上也保持薄膜的状态。利用X射线衍射对样品物相结构进行分析, Ca-Si-O-Eu中空纤维在1300℃保温5 h后得到层状结构的CaSi₂O₂N₂, Eu²⁺离子的掺入没有改变CaSi₂O₂N₂的主晶相。在400 nm激发光照射下CaSi₂O₂N₂:Eu²⁺荧光纤维在550 nm附近具有一个宽发射峰, 对应着Eu²⁺离子4f⁶5d→4f⁷跃迁。与CaSi₂O₂N₂:Eu²⁺荧光粉或普通荧光纤维膜比较, 制备的中空荧光纤维膜有更高的发射光强度。     

氧化石墨烯在水热法制备Sc2W3O12粉体中的应用

以硝酸钪, 钨酸铵等为原料, 氧化石墨烯为表面活性剂, 采用水热法制备了类十字架状Sc₂W₃O₁₂粉体。利用XRD、TG-DSC、Raman及SEM考察了加入氧化石墨烯对所合成产物结构和形貌的影响, 采用TMA测试了所得Sc₂W₃O₁₂粉体的热膨胀性质。分析表明: 在200℃水热条件下, 氧化石墨烯包裹在Sc₂W₃O₁₂晶粒表面并抑制了原有某些晶面的增长, 使晶粒逐渐长为棒状, 进而纳米棒团聚成类十字架状, 产物经620℃热处理10 min后得到纯净的Sc₂W₃O₁₂粉体, 其在室温~800℃均呈现出负热膨胀特性, 且平均热膨胀系数为-4.75×10^-6 /K。     

New transparent conducting MgIn2O4---Zn2In2O5 thin films prepared by magnetron sputtering

New materials for a transparent conducting oxide film are demonstrated. Highly transparent Zn₂In₂O₅ films with a resistivity of 3.9 × 10⁻⁴ Ω cm were prepared on substrates at room temperature using a pseudobinary compound powder target composed of ZnO (50 mol.%) and In₂O₃ (50 mol.%) by r.f. magnetron sputtering. MgIn₂O₄---Zn₂In₂O₅ films were prepared using MgIn₂O₄ targets with a ZnO content of 0–100 wt.%. The resistivity of the deposited films gradually decreased from 2 × 10⁻³ to 3.9 × 10⁻⁴ Ω cm as the Zn/(Mg + Zn) atomic ratio introduced into the films was increased. The greatest transparency was obtained in a MgIn₂O₄ film. The optical absorption edge of the films decreased as the Zn/(Mg + Zn) atomic ratio was increased, corresponding to the bandgap energy of their materials. It was found that the resistance of the undoped Zn₂In₂O₅ films was more stable than either the undoped MgIn₂O₄, ZnO or In₂O₃ films in oxidizing environments at high temperatures.     

单靶磁控溅射制备铜铟硒和铜铟锌硒薄膜及其结构、光学性质研究

采用单靶磁控溅射法制备了铜铟硒(CIS)和铜铟锌硒(CIZS)薄膜。XRD表征发现CIZS-300出现了与其它薄膜不同的择优取向, 分析认为贫铜的状态和适宜温度可能促使薄膜择优取向从(112)向(220)转化; 拉曼光谱在171 cm^-1处出现的较强峰, 和206 cm^-1处出现的较弱峰, 分别为A₁和B₂振动模式, 而Zn的掺入导致A₁拉曼峰的宽化和蓝移; Zn的掺入使Cu含量改变进而使CIZS禁带宽度增大, 这是由于Se的p轨道和Cu的d轨道杂化引起的; SEM测试结果表明CIZS薄膜表面比CIS表面更为紧密、平滑。     

Electrodeposition of CuInS2 from aqueous solution Part I. Electrodeposition of Cu---S film

As the first stage for thin film preparation of copper indium disulfide (CuInS₂), an electrodeposition technique of thin films in the Cu---S system was investigated from a new viewpoint. Deposition was carried out potentiostatically on a Ti substrate from acidic aqueous solution containing CuSO₄ and Na₂S₂O₃. Tartaric acid was found to be effective as a buffer for stabilizing the hydrogen ion concentration. Thin films of Cu₂S were obtained at −0.7 V vs. Ag/AgCl with good reproducibility from a solution containing 10 mM CuSO₄, 400 mM Na₂S₂O₃ and 100 mM tartaric acid. Scanning electron microscopy and energy dispersive X-ray analyses revealed that the film deposited had a crack-free surface and uniform stoichiometry of Cu₂S. Film thickness was estimated to be 0.6−0.8×10⁻⁶m after 3600 s deposition. The mechanism of Cu₂S formation was supposed to be that S₂O₃²⁻ ion reduces Cu(II) ion to make complex with Cu(I) ion. Probably it is this complex that contributes to the Cu₂S formation.     

Characterization of indium tin oxide film and practical ITO film by electron microscopy

In order to clarify the structure of indium oxide film containing tin and tin oxides, various In₂O₃ based films prepared by vacuum evaporation were studied using high-resolution electron microscope (HREM). Indium tin oxide (ITO) film was composed of In₂O₃ and SnO. SnO crystal also contained (110) or (101) crystallographic shear (CS) structures that indicate excess amounts of tin. The CS structure was also found in a commercial ITO film having the resistivity of 2×10⁻⁴ Ω cm.     

Characterization of indium zinc oxide thin films prepared by pulsed laser deposition using a Zn3In2O6 target

Using a Zn₃In₂O₆ target, indium-zinc oxide films were prepared by pulsed laser deposition. The influence of the substrate deposition temperature and the oxygen pressure on the structure, optical and electrical properties were studied. Crystalline films are obtained for substrate temperatures above 200°C. At the optimum substrate deposition temperature of 500°C and the optimum oxygen pressure of 10⁻³ mbar, both conditions that indeed lead to the highest conductivity, Zn₃In₂O₆ films exhibit a transparency of 85% in the visible region and a conductivity of 1000 S/cm. Depositions carried out in oxygen and reducing gas, 93% Ar/7% H₂, result in large discrepancies between the target stoichiometry and the film composition. The Zn/In (at.%) ratio of 1.5 is only preserved for oxygen pressures of 10⁻²–10⁻³ mbar and a 93% Ar/7% H₂ pressure of 10⁻² mbar. The optical properties are basically not affected by the type of atmosphere used during the film deposition, unlike the conductivity which significantly increases from 80 to 1400 S/cm for a film deposited in 10⁻² mbar of O₂ and in 93% Ar/7% H₂, respectively.     

Long lasting phosphorescence of Sr4Al14O25:Eu,Dy thin films by magnetron sputtering

This paper reports the preparation process and the long lasting phosphorescence of the Sr₄Al₁₄O₂₅:Eu²⁺,Dy³⁺ thin films obtained by magnetron sputtering. Phosphorescence was achieved by annealing the films in reducing atmosphere. Sr₄Al₁₄O₂₅ thin film was obtained when the films were treated at 1200 °C, while SrAl₂O₄ was generated as the intermediate phase during the annealing process. Sr₄Al₁₄O₂₅:Eu²⁺,Dy³⁺ film generated an emission at 485 nm, and SrAl₂O₄:Eu²⁺,Dy³⁺ film showed an emission peaking at 515 nm. Afterglow characteristics were observed for both films, and Sr₄Al₁₄O₂₅:Eu²⁺,Dy³⁺ film showed a better afterglow property than the SrAl₂O₄:Eu²⁺,Dy³⁺ film due to a deeper trap level and a higher trap concentration formed in the thin films.     

电场作用下铅基阳极表面氧化膜残余内应力产生机理研究

采用SEM、XRD和Raman光谱法研究电场作用下含铬溶液中铅基阳极氧化膜的残余内应力行为、内应力形成, 讨论了氧化膜内应力产生过程与氧化膜表面形貌、物质结构转变的关系。结果表明, 在氧化膜形成初期, Cr₂O₇^2- 和HCrO₄^-离子首先吸附在铅基阳极表面, 电场作用下, 其与铅基体反应并分别形成PbCrO₄和PbO, 同时产生较大内应力。电流密度的增加, 显著提高氧化膜的内应力。随着氧化时间的延长, 阳极析氧行为的加剧, 促进PbO或β-PbO₂形成。同时, 晶粒长大与内应力的不匹配, 导致内应力局部释放, 表现出氧化膜残余内应力减小。铅基氧化膜中不同氧化物组织结构的晶格参数差异, 增加了氧化膜内应力梯度变化, 致使氧化膜破裂。