蓝宝石品体生长方法研究

蓝宝石单晶由于其优良的综合性能而成为当前重要的技术晶体材料之一,在各个领域都具有广泛的应用。本文简述了蓝宝石单晶的主要性能,主要介绍了几种重要的蓝宝石单晶生长方法,并分析了各种方法的特点,最后概括了蓝宝石单晶目前及今后的主要发展方向,指出稳定工艺才是企业成熟的基础。目前使用热交换法生长蓝宝石,最有可能在不断地增加晶体直径的情况下保持甚至提高晶锭的利用率,从而降低生产成本,在未来赢得更多更大的市场。     

氮化铪在蓝宝石衬底上的镀膜研究

利用反应式磁控溅射镀膜系统在蓝宝石衬底上制备了氮化铪(HfxN)薄膜,系统研究了氮气流量fN和镀膜温度Ts对HfxN薄膜的物相组成、晶体结构和电学性质的影响。实验结果表明,在fN=3sccm时,可以在蓝宝石衬底上获得化学计量比接近1的HfxN薄膜,方块电阻为5.24Ω/sq;X射线衍射光谱(XRD)结果显示薄膜为岩盐结构的δ-HfN相;提高镀膜温度可以显著提高HfxN薄膜在蓝宝石衬底上的晶体质量,并且薄膜趋于(111)方向单晶生长;原子力显微镜(AFM)显示薄膜表面平整,均方根粗糙度Rq=0.193nm。     

(111)晶面同质外延生长单晶金刚石的研究

利用微波等离子体化学气相沉积(MPCVD)法,在天然金刚石衬底的(111)晶面上同质外延生长单晶金刚石,研究了沉积温度、CH_4浓度以及小角度偏离(111)晶面的衬底对金刚石生长的影响。采用SEM和Raman对外延生长的金刚石进行表征,结果表明:高沉积温度、高CH_4浓度条件下,金刚石呈现出无序的多晶生长现象,随着沉积温度的降低,形貌和质量明显提高,在低沉积温度条件下金刚石表现出一致的单晶生长,但是表面形貌较为粗糙。进一步降低CH_4浓度可外延生长质量高、表面平整的单晶金刚石,速率达4.7μm/h.使用倾斜抛光方法将部分衬底面偏离(111)晶面约6°,对比实验发现,微小偏离(111)晶面的斜面衬底在高沉积温度、高CH_4浓度条件下也能生长出质量较好的单晶金刚石,生长速率明显提高,达到了9μm/h。     

用于GaN基发光二极管的蓝宝石图形衬底制备进展

近几年, 图形化蓝宝石衬底因其作为GaN基发光二极管外延衬底, 不仅能降低GaN外延薄膜的线位错密度, 还能提高LED的光提取效率而引起国内外许多科研机构的广泛研究兴趣. 本文综述了图形化蓝宝石衬底提高GaN基发光二极管性能的作用机理, 重点评述了目前图形化蓝宝石衬底的制备方法(湿法刻蚀、干法刻蚀、固相反应)和图形尺寸(微米图形化、纳米图形化), 分析比较了不同制备方法和图形尺寸制备蓝宝石图形衬底对GaN基发光二极管性能改善, 最后针对蓝宝石图形衬底制备存在的问题对其今后的发展方向做出展望.     

衬底对PECVD法生长氢化纳米硅薄膜的影响

用等离子体增强化学汽相沉积(PECVD)法,在玻璃和单晶Si衬底上分别制备了氢化纳米硅薄膜,对在相同工艺条件下的薄膜进行了对比研究,即用Raman散射谱研究了薄膜的晶粒平均大小和晶态比;用台阶仪测试了薄膜厚度;用X射线衍射谱和原子力显微镜对薄膜微结构和形貌进行了对比研究,发现所制备薄膜的微观结构有很大的差异。相同工艺条件下,在玻璃衬底上生长的薄膜,表面粗糙度小于单晶Si衬底上的薄膜,而晶化程度低于单晶Si衬底。掺杂使微结构发生了变化,掺P促进晶化,掺B促进非晶化,对此实验结果给出了定性的分析。     

高效大功率LED用蓝宝石图形衬底制备的研究进展

近年来,图形化的蓝宝石衬底在改善GaN晶体外延生长质量以及提升LED器件发光提取效率方面作用显著,引起了广泛的研究兴趣。综述了蓝宝石图形衬底的制备方法(干法刻蚀、湿法刻蚀、外延生长法),并较系统地介绍了蓝宝石图形衬底表面周期性图形参数(图形形貌、图案尺寸、图形占位比及其深度)对LED发光薄膜及器件的影响及其机理,最后对蓝宝石图形衬底的发展趋势进行了展望。     

山东大学大直径SiC单晶研究获突破

山东大学晶体材料国家重点实验室在大直径SiC单晶研究方面取得突破性进展，成功生长出直径3英寸的SiC单晶，2英寸半绝缘SiC单晶衬底达到“开盒即用（epi-ready）”的水平，与合作单位在SiC衬底上制备的微波GaN／AlGaNHEMT器件的输出功率密度达到5．5W／mm的水平，这是国产SiC半绝缘衬底第一次得到具有微波特性的器件，     

Cl2/BCl3 ICP刻蚀蓝宝石研究靠

由于GaN单晶制备比较困难，通常氮化物光电子器件都是制备在蓝宝石衬底上的，而氮化物和蓝宝石大的晶格失配和热膨胀系数的差别，使得在衬底上生长的氮化物材料位错和缺陷密度较大，影响了器件的发光效率和寿命。PSS技术可以有效地减少外延材料的位错和缺陷，在氮化物器件制备中得到了广泛的应用。但是由于蓝宝石很高的硬度和化学稳定性，使其刻蚀难度较大。本文研究了ICP刻蚀蓝宝石中工艺参数对蓝宝石刻蚀速率的影响规律，所用气体为Cl2／BCl3，研究结果表明，蓝宝石的刻蚀速率随着ICP功率、RF功率和气体总流量的增大单调增大；随着压强的减小首先增大，继而减小。当BCl3比例为80％时，刻蚀速率最大。在BCl3流量为80sccm，Cl2流量为20sccm，ICP功率为2500W，RF功率为500W，压强为0．9Pa，温度为60℃时刻蚀速率达到最大值217nm／min。     

Si(111)衬底上3C-SiC的固源MBE异质外延生长

国内首次利用固源分子束外延(MBE)技术,在衬底温度为1100℃时,以Si(111)为衬底成功地外延生长出了3C-SiC单晶薄膜。通过X射线衍射(XRD)、拉曼光谱(Raman)以及原位反射高能电子衍射(RHEED)等手段研究了外延薄膜的晶型、结晶质量、外延膜与衬底的外延取向关系,并考察了薄膜制备过程中衬底的碳化对薄膜质量的影响。结果表明,外延膜与衬底晶格取向完全一致;碳化可以减小SiC和衬底Si之间的晶格失配、释放应力、引入成核中心,有利于薄膜单晶质量的提高;碳化温度存在最佳值,这一现象与成核过程有关。     

蓝宝石衬底上石墨烯的制备研究

开展了化学气相沉积(CVD)法在蓝宝石衬底上直接生长石墨烯的制备研究和模拟研究,研究衬底表面形貌和生长温度对石墨烯的影响。运用原子力显微镜(AFM)、X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)、拉曼光谱(Raman)、高分辨透射电子显微镜(HRTEM)等对石墨烯生长开展了微结构研究。模拟研究发现,氢气对衬底表面形貌具有重要影响,在H原子的作用下Al—O键被拉长了51.42%,近乎断裂,因而对蓝宝石衬底的表面粗糙度产生影响。实验发现H_2对蓝宝石衬底有刻蚀作用,刻蚀后的蓝宝石衬底表面粗糙度Ra变大,不易于石墨烯生长。随着生长温度的升高,生长的石墨烯质量也逐渐变好。     

Macroscopic and microscopic investigation on chemical mechanical polishing of sapphire wafer

Sapphire (alpha-Al2O3) is an important ceramic material that is widely used in substrate material for electronics. We investigate the chemical reaction layer on a sapphire wafer using X-ray photoelectron microscopy (XPS) and atomic force microscopy (AFM). The frictional characteristics of sapphire chemical mechanical polishing (CMP) was studied using in-situ friction force monitoring system. From XPS analysis and AFM experiment, a chemically-reacted layer was verified on the sapphire surface through a chemical reaction between the sapphire and chemicals in a slurry. During sapphire CMP, the friction force mainly depended on the applied pressure. The material removal efficiency per unit friction energy in sapphire CMP was 6.18 nm/kJ.     

Preferred orientation of NiAl2O4 spinel grown on sapphire

The orientation relationships between the spinel nickel aluminate (NiAl₂O₄) and the aluminum oxide single crystal from which it is grown have been investigated. A variety of sapphire surface orientations were used. The nickel source was primarily nickel vapor, but nickel metal was also used. The large grained spinel layer growing in contact with the sapphire is highly textured, and a thinner fine grained layer on its outer surface is only lightly textured. Two principal textures were observed: for sapphire surfaces oriented near the basal plane, the {111} spinel is parallel to the (0001) sapphire; for surfaces oriented away from the basal plane the {111} spinel is parallel to the {1120} sapphire. In both cases the directions 〈110〉 spinel and 〈1010〉 sapphire are aligned. Considerable twinning and several secondary textures have also been seen.     

非极性GaN用r面蓝宝石衬底

采用温梯法生长了非极性GaN外延衬底r(0112)面蓝宝石, 使用化学机械抛光加工衬底表面, 对衬底的结晶质量、光学性能和加工质量进行了研究. 结果显示r面蓝宝石衬底基本性能参数如下：平均半峰宽值为19.4arcsec; 位错密度为5.6×10³cm^-2, 波长大于300nm时的平均透过率大于80％; 光学均匀性Δn=6.6×10^-5; 平均表面粗糙度为0.49nm. 结果表明, 温梯法生长的r(0112)面蓝宝石衬底结晶质量好、位错密度低、光学性能优良、加工的表面质量高, 达到了GaN外延衬底的标准.     

Ti:sapphire laser cavity mode and pump-laser mode calculations

Comprehensive calculations of the cavity mode size throughout a Ti:sapphire laser, made with the ABCD Gaussian beam formalism are reported. These calculations show that the beam is not collimated, in general, in what are normally referred to as the collimated arms of the laser cavity. Additionally, the mode size and volume (in the gain medium) of the argon-ion laser, which is used to pump the Ti:sapphire laser optically, are evaluated for different focusing geometries, and graphs that can be used to select suitable mode-matching optics are produced. It is concluded that an appropriate strategy for mode matching the pump beam to the Ti:sapphire laser mode is to use a zoom telescope to tailor the collimated pump-laser beam diameter to an optimum value. Finally, comparisons of the pump-laser mode and the Ti:sapphire laser mode are presented for selected pumping geometries.     

GaN基LED图形衬底的性能研究

蓝宝石图形衬底可以降低外延位错密度并增强背散射光, 已经成为制备高亮LED有效技术手段。本研究运用时域有限差分(FDTD)法模拟和比较了GaN基微纳米图形衬底LED几种衬底图形结构对光的提取效率的影响。模拟结果显示纳米图形衬底(NPSS)对光效的提高明显优于微米图形衬底(MPSS)。在对圆柱、圆孔、圆台、圆锥和曲面锥等纳米结构的研究中, 圆台柱结构的纳米图形衬底对光提取效果最好。通过进一步模拟优化, 得到圆台结构的最佳参数, 此时相对于普通衬底LED光的提取效率提高了96.6%。试验中, 采用软模压印技术在蓝宝石基片上大面积制备出纳米圆台图形衬底, 并测得外延生长GaN层后的外延片的PL强度增加了8倍, 可见纳米图形衬底对提高LED的出光效率有显著效果。     

蓝宝石在人工髋关节置换中的应用

介绍了人工碗关节置换材料的要求及研究进展,例举了目前主要使用的髋关节置换材料种类、配合方式及各自的优势与不足。分析了蓝宝石作为髋关节置换材料在性能方面的优势,介绍了目前对蓝宝石髋关节假体的研究现状,并展望了蓝宝石在髋关节置换方面的应用前景。     

Equilibrium segregation of Ti to Au–sapphire interfaces

Equilibrium segregation of Ti to Au–sapphire interfaces was measured from dewetted Au(Ti) films on the (0001) surface of sapphire. Quantitative energy dispersive spectroscopy was used to determine a Ti excess at the Au–sapphire interface of 2.2 Ti atoms/nm², which together with an excess of 4.6 Ti atoms/nm² at the (0001) sapphire surface, is associated with a decrease in the solid–solid Au–sapphire interface energy. Quantitative high resolution transmission electron microscopy showed that the segregated Ti is distributed within a 1.54-nm thick intergranular film at the Au–sapphire interface, which is not a bulk phase but rather an equilibrium interface state. As a result, Ti segregation without the formation of a bulk reaction at the interface is associated with a decreased interface energy, improved wetting, and may be an important part of the total complex mechanism responsible for improved wetting and spreading in “reactive” braze systems.     

Effect of Neutron Irradiation on the Structure and Optical Properties of Sapphire

The effect of neutron irradiation on the structure and optical properties of sapphire single crystals is studied. IR spectroscopy is used to probe the lattice dynamics in the region of principal vibrational modes in a broad range of neutron fluences. The lattice parameters of sapphire are measured as a function of dose. Some of the structural parameters studied are found to vary nonlinearly with dose. The structural data are shown to correlate with the vibrational and luminescence spectra. The mechanism of radiation damage to sapphire crystals at high neutron fluences is discussed.     

用于高温测量的蓝宝石光纤光栅的制备研究

针对蓝宝石光纤的制作、蓝宝石光纤包层材料的选取与制作、蓝宝石光纤上光栅的制作及蓝宝石光纤光栅通过降低模式从而实现单模传输等问题,调研相关文献后,介绍了激光加热焊台生长法、边缘限定薄膜供料生长法两种蓝宝石光纤制作方法,和直接在蓝宝石光纤表面制作包层、质子/离子植入和退火处理、化学沉积法、浸铸法等蓝宝石光纤包层的可能制作方法,且用刻刀刻划技术、等离子刻蚀技术、飞秒激光加工技术刻制蓝宝石光纤光栅以及通过弯曲光纤、将蓝宝石光纤直径做小和与单模光纤连接来控制蓝宝石光纤传输模式以达到单模传输。