Impurity states in cobalt-doped silicon

Cobalt was diffused into p⁺ pn⁺ silicon structures at 900° and 1150°C for 2−4 hours followed by various quenching conditions. Four primary hole traps and two electron traps associated with cobalt in these devices were observed. The hole traps are labeled H1(E_v + 0.22 eV), H2(E_v + 0.29 eV), H3 (E_v + 0.40 eV) and H4(E_v + 0.45 eV) while the electron traps labeled E1 and E2 are located at E_c − 0.36 eV and E_c − 0.44 eV, respectively. The concentrations, thermal emission rates, and the capture cross sections for the majority carriers at these defects are reported. The behavior of these defects under heat treatment and the emergence of secondary defects, H5(E_v +0.22 eV) and H6 (E_v +0.34 eV), will be discussed.     

Electrical characterisation of Cu-Diffusedn-GaAs epitaxial layers using optical deep level transient spectroscopy

Undopedn ^--GaAs epitaxial layers were grown by OMVPE onn ⁺ (1 × 10¹⁸ cm³) and semi-insulating (SI) GaAs substrates. The as-grown epitaxial layers grown onn ⁺ substrates contained several deep level defects whereas those grown on SI substrates were, apart from the EL2, virtually “defect free”. Upon Cu diffusion, deep levels which may reduce hole and electron diffusion lengths and lifetimes, were formed. Optical deep level transient spectrocopy (ODLTS) has been used to identify such levels atE _v + 0,41 eV andE _c-0,31 eV respectively. The EO1 (EL2) trap concentration reduced after Cu had been diffused into the epitaxial layers. The magnitude of this reduction was approximately equal to the concentration of the trap found atE _c - 0,31 eV which suggests that the two may be related. Activation energies and capture cross-section values are presented for the deep levels detected in these epitaxial layers.     

硅中钛的若干物理性质

本文报道研究扩散掺钛的硅中深能级的结果。用DLTS法观测到三个与钛有关的深能级,即在n-Si(Ti)中有二个电子陷阱,能级位置分别为Ec0.23eV和Ec0.53eV,在p-Si(Ti)中有一个空穴陷阱,能级位置为Ev+0.32eV。详细的电容瞬态研究得到了这些能级在一定测试温度范围内的热激活能和俘获截面以及其它有关参量。本文还就测量结果对能级的键合性质和钉扎于那一能带做了讨论。     

Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy

GaN p-i-n photodetectors grown on sapphire by reactive molecular beam epitaxy have been characterized by measurements of room-temperature current-voltage (I-V), temperature-dependent capacitance (C-V-T), and deep level transient spectroscopy (DLTS) under both majority and minority carrier injection. Due to what we believe to be threading dislocations, the reverse I-V curves of p-i-n photodetectors show typical electric-field enhanced soft breakdown characteristics. A carrier freeze-out due to the de-ionization of Mg-related deep acceptors has been found by C-V-T measurements. Three electron traps, B (0.61 eV), D (0.23 eV), and E₁ (0.25 eV) and one hole trap, H₃ (0.79 eV) have been revealed by DLTS measurements. The photodetectors with lower leakage currents usually show higher responsivity and lower trap densities of D and E₁.     

Stoichiometry-dependent deep levels in undoped p-type Al0.38Ga0.62As grown by liquid phase epitaxy

Photocapacitance (PHCAP) and photoluminescence (PL) measurements were applied to unintentionally doped p-type Al_0.38Ga_0.62As grown by liquid phase epitaxy using the temperature difference method under controlled vapor pressure. PHCAP spectra revealed three dominant deep levels at E_v+0.9, E_v + 1.45, and E_v+1.96 eV, and a deep level at E_v+0.9−1.5 eV which was not neutralized by forward bias injection. These level densities increase with increasing arsenic vapor pressure and net shallow acceptor density. Furthermore, PL spectra reveal a deep level at 1.6–1.7 eV. The PL intensity of this deep level increases with increasing arsenic vapor pressure. These deep levels are thought to be associated with excess As.     

A DLTS analysis of electron and hole traps in VPE grown n-GaAs using schottky barrier diodes

Capacitance lock-in amplifier deep level transient spectroscopy (DLTS) using Schottky barrier diodes (SBD’s) was used to characterize the electron and hole traps in VPEn-GaAs (N_D - N_A = 1 - 2 x 10¹⁵/cm³) layers grown on n⁺ (10¹⁸/cm³) GaAs substrates. The main electron traps observed were the EL2 atE _c - 0.81 eV and a level atE _c - 0.48 eV. The use of large forward bias electrical injection pulses (and no optical excitation) facilitated the detection of hole traps, of which the defect with an energy level atE _v + 0.42 eV, speculated to be Cu-related, was present in the highest concentration.     

A DLTS study of deep levels in the band gap of textured stoichiometric p-CdTe polycrystals

Deep-level transient spectroscopy (DLTS) was used to identify a set of deep electronic states in the band gap of textured p-CdTe polycrystals whose composition was almost stoichiometric. Four hole traps and two electron traps were observed. It is shown that the deepest hole trap with a level at E _v+0.86 eV corresponds to a prevalent defect in this material. Special features of the line shape in the DLTS spectrum and the logarithmic dependence of population of this level on the duration of the filling pulse correspond to an extended defect related most probably to dislocations at the grain boundaries.     

Modification of the spectrum of electronic states in polycrystalline p-CdTe as a result of annealing in Cd vapors or natural aging

Electrical properties, steady-state photoconductivity, and kinetics of photoconductivity have been studied in the samples of polycrystalline p-CdTe (as-grown by the method of low-temperature synthesis from thoroughly purified components; subjected to subsequent annealing in Cd vapors; and aged at room temperature). It is shown that electrical properties of as-grown p-CdTe are controlled by a complex defect with the level at E _v + 0.16 eV; the latter transforms into the level E _v + 0.25 eV as a result of annealing in Cd vapors and aging of the samples. In addition, the deep centers with the levels E _v + 0.6 eV and E _v + 0.86 eV were detected; these centers govern the decay of the photocurrent.     

Effects of Illumination on Ar<Superscript>+</Superscript>-Implanted <Emphasis Type="Italic">n</Emphasis>-Type 6H-SiC Epitaxial Layers

Argon ions were implanted into n-type 6H-SiC epitaxial layers at 600°C. Postimplantation annealing was carried out at 1,600°C for 5 min in an Ar ambient. Four implantation-induced defect levels were observed at E_C-0.28 eV, E_C-0.34 eV, E_C-0.46 eV, and E_C-0.62 eV by deep level transient spectroscopy. The defect center at E_C-0.28 eV is correlated with ED₁/ED₂ and with ID₅. The defect at E_C-0.46 eV with a capture cross section of 7.8 × 10⁻¹⁶ cm² is correlated with E1/E2, while the defect at E_C-0.62 eV with a capture cross section of 2.6 × 10⁻¹⁴ cm² is correlated with Z1/Z2. Photo deep level transient spectroscopy was also used to study these defects. Upon illumination, the amplitudes of the deep level transient spectroscopy (DLTS) peaks increased considerably. Two emission components of Z1/Z2 were revealed: one fast and the other slow. The fast component could only be observed with a narrow rate window. In addition, a new defect was observed on the low-temperature side of the defect at E_C-0.28 eV when the sample was illuminated. [rl](Received ...; accepted ...)     

Interaction of copper impurity with radiation defects in silicon doped with boron

The spectrum of deep levels formed in boron-doped Czochralski-grown silicon single crystals as a result of interaction of radiation defects with copper impurity is studied. It is shown that, irrespective of the order of introduction of defects (both in the case of low-temperature copper diffusion into crystals preliminarily irradiated with electrons and in the case of irradiation of the samples contaminated with copper), the same set of deep levels appears. In addition to conventional radiation defects, three types of levels have been detected in the band gap of copper-containing crystals. These levels include the level E _v + 0.49 eV (already mentioned in available publications), the level E _v + 0.51 eV (previously not related to copper), and a level close to the donor level of a vacancy. Based on the analysis of concentration profiles, the interstitial carbonoxygen pair is excluded from possible precursors of the copper-containing center with level E _v + 0.49 eV.     

Gamma-induced trapping levels in si with and without gold doping

Because gold doping can be used to suppress ionization-induced photocurrents in Si devices exposed to radiation environments, it is of interest to know whether or not radiation-induced mobile defects interact with Au to form deep level defect complexes. Trapping level studies have been undertaken using the technique of deep level transient spectroscopy (DLTS) prior to and following Co-60 gamma irradiation and thermal annealing of p⁺/n Si junctions doped with 3-6 × 10¹⁴ Au/cm³ and 1-3 × 10¹³ Au/cm³ , and of non-Au doped p⁺ /n and n⁺ /p junctions. Prior to irradiation, the Au acceptor level at E_c - 0.57 eV is observed in the gold doped junctions. During irradiation, five additional levels at E_c - 0.18 eV, E_c - 0.20 eV, E_c - 0.46 eV, E_v +0.17 eV, and E_v + 0.39 eV grow in linearly with gamma dose. None of these levels are associated with Au because they are observed at equal concentrations in the non-Au doped and Audoped junctions, and because the Au concentration as monitored by the E_c - 0.57 eV level does not change even when defect concentrations are of the same order. Isochronal annealing studies also indicate that the Au acceptors are inert to defect re-ordering effects which occur during annealing. This work was supported by the United States Department of Energy (DOE) under contract number DE-AC04-76-DP00789. A United States Department of Energy Facility.     

Study of electrically active defects in n-GaN layer

Deep level defects in both p⁺/n junctions and n-type Schottky GaN diodes are studied using the Fourier transform deep level transient spectroscopy. An electron trap level was detected in the range of energies at E_c−E_t=0.23–0.27 eV with a capture cross-section of the order of 10⁻¹⁹–10⁻¹⁶ cm² for both the p⁺/n and n-type Schottky GaN diodes. For one set of p⁺/n diodes with a structure of Au/Pt/p⁺–GaN/n–GaN/n⁺–GaN/Ti/Al/Pd/Au and the n-type Schottky diodes, two other common electron traps are found at energy positions, E_c−E_t=0.53–0.56 eV and 0.79–0.82 eV. In addition, an electron trap level with energy position at E_c−E_t=1.07 eV and a capture cross-section of σ_n=1.6×10⁻¹³ cm² are detected for the n-type Schottky diodes. This trap level has not been previously reported in the literature. For the other set of p⁺/n diodes with a structure of Au/Ni/p⁺–GaN/n–GaN/n⁺–GaN/Ti/Al/Pd/Au, a prominent minority carrier (hole) trap level was also identified with an energy position at E_t−E_v=0.85 eV and a capture cross-section of σ_n=8.1×10⁻¹⁴ cm². The 0.56 eV electron trap level observed in n-type Schottky diode and the 0.23 eV electron trap level detected in the p⁺/n diode with Ni/Au contact are attributed to the extended defects based on the observation of logarithmic capture kinetics.     

Defect levels in chromium-doped silicon

The transient capacitance technique has been used to study the chromium-related levels in the silicon band gap. Chromium was diffused at temperature of 1100 and 1150°C for 0.5 and 3 hr. Five different levels at E_c?0.11 eV, E_c?0.21 eV, E_c?0.28 eV, E_c?0.36 eV and E_c?0.45 eV were obtained from the Arrheniu plots of the electron thermal-emission rates. The number of levels in the upper half of the band gap decreased from five to two with an increase of Cr-diffusion period. Two levels were located at E_c?0.20 eV (donor) and E_c?0.43 eV (acceptor). A donor level was also observed at E_v + 0.25 eV. The donor level was not affected by the diffusion condition. The majority carrier capture cross sections of the three dominant levels have been measured by the transient capacitance technique modified by the pulse transformer. The values were σ_n = 4.1 × 10^?15 cm² for the upper donor at E_c?0.20 eV, σ_n = 2.0 × 10^?16 cm² for the acceptor at E_c ?0.43 eV and σ_p = 9.1 × 10^?18 cm² for the lower donor at E_v + 0.25 eV, and were independent of temperature. The three dominant levels are due to distinct chromium centers.     

Effect of Se-doping on deep impurities in AlxGa1−xAs grown by metalorganic chemical vapor deposition

We have studied the effect of Se-doping on deep impurities in Al_xGa_1−xAs (x = 0.2∼0.3) grown by metalorganic chemical vapor deposition (MOCVD). Deep impurities in various Se-doped Al_xGa_1−xAs layers grown on GaAs substrates were measured by deep level transient spectroscopy and secondary ion mass spectroscopy. We have found that the commonly observed oxygen contamination-related deep levels at E_c-0.53 and 0.70 eV and germanium-related level at E_c-0.30 eV in MOCVD grown Al_xGa_1−xAs can be effectively eliminated by Se-doping. In addition, a deep hole level located at E_y + 0.65 eV was found for the first time in Se-doped Al_xGa_1-xAs when Se ≥2 × 10¹⁷ cm⁻³ or x ≥ 0.25. The concentration of this hole trap increases with increasing Se doping level and Al composition. Under optimized Se-doping conditions, an extremely low deep level density (N_t less than 5 × 10¹² cm⁻³, detection limit) Al_0.22Ga_0.78As layer was achieved. A p-type Al_0.2Ga_0.8As layer with a low deep level density was also obtained by a (Zn, Se) codoping technique.     

Study of grown-in defects and effect of thermal annealing in Al0.3Ga0.7As and GaAs LPE layers

Studies of the grown-in deep-level defects in the undoped n-Al_xGa_1-xAs (x = 0.3) and GaAs epitaxial layers prepared by the liquid phase epitaxy (LPE) techniques have been made, using DLTS, I-V and C-V measurements. The effect of 300 °C thermal annealing on the grown-in defects was investigated as a function of annealing time. The results showed that significant reduction in these grown-in defects can be achieved via low temperature thermal annealing process. The main electron and hole traps observed in the Al_0.3Ga_0.7As LPE layer were due to the E_c-0.31 eV and E_v+0.18 eV level, respectively, while for the GaAs LPE layer, the electron traps were due to the E_c-0.42 and 0.60 eV levels, and the hole traps were due to E_v+0.40 and 0.71 eV levels. Research supported in part by the Air Force Wright Aeronautical Laboratories, Aeropropulsion Lab., Wright Patterson Air Force Base, Ohio, subcontract through SCEEE, contract F33615-81-C-2011, task-4, and in part by AFOSR grant no. 81-0187.     

Deep level studies in MBE GaAs grown at low temperature

The photo-induced current transient spectroscopy (PICTS), thermoelectric effect spectroscopy (TEES) and thermally stimulated current (TSC) spectroscopy have been used to characterize the deep levels in the GaAs materials grown at low temperature by molecular beam epitaxy. At least five hole traps and five electron traps have been identified by the TEES measurement employing a simplified sample arrangement. We have studied the behavior of various traps as a function of the growth temperature and the post-growth annealing temperature. Some of the shallower hole traps were annealed out above 650‡ C. Electron traps atE _c- 0.29 eV andE _c- 0.49 eV were present in the material, and have been identified as M3 and M4, respectively. The dominant electron trap, atE _c- 0.57 eV, is believed to be associated with the stoichiometric defect caused by the excess As in the material, and our data show evidence of forming a defect band by this trap. A possible model involving As precipitates is proposed for this trap atE _c-0.57 eV.     

Photocapacitance of deep levels in GaAs:Cr and GaAs:O

Photocapacitance measurements have been applied to characterize deep impurities present in bulk-grown single crystals of n-type GaAs:O and GaAs:Cr. Three principal defects in GaAs:O have levels located at (E_c ? 0.79 eV), (E_v + 0.40 eV) and (E_c ? 0.46 eV); the first of these corresponds to the level commonly associa with oxygen and agrees well with the Lucovsky model for photoionization spectrum. The Cr level in GaAs:Cr does not follow the Lucovsky model and appears to undergo “lattice relaxation” during optical transitions.     

The mobility of a nickel-related centre in reverse biased germanium n+p diodes

The motion of a nickel-related centre (E_v + 0.14 eV) in reverse biased germanium n⁺p junction has been observed using deep level transient spectroscopy. The concentration profile of this deep acceptor defect is presented as a function of the duration of the electric field application. An estimated mobility of 2.0 ± 1.1 × 10^?13 cm²Vs^?1 at 25°c was obtained for the nickel-related centre.     

On the behavior of Bi in a CdTe lattice and the compensation effect in CdTe:Bi

CdTe crystals of two types have been grown by the vertical Bridgman method: (i) crystals doped with Bi to ～10¹⁸ cm^?3 and (ii) double-doped (Bi + Cl) crystals with a Bi concentration of ～10¹⁸ cm^?3 and a Cl concentration of ～10¹⁷ cm^?3. The temperature dependences of the resistivity, photoconductivity, and low-temperature photoluminescence are investigated for the crystals grown. Analysis has shown that doping with Bi (crystals of the first type) leads to compensation of the material. The resistivity of the CdTe:Bi samples at room temperature, depending on the doping level, is varied in the range of 10⁵–10⁹ Ω cm. The hole concentration is determined by the acceptor level at E _v + 0.4 eV in lightly doped CdTe:Bi samples and by the deep center at E _v + 0.72 eV in heavily doped CdTe:Bi samples. Double doping leads to inversion of the conductivity type and reduces the resistivity to ～1 Ω cm. Heavily doped CdTe:Bi crystals and double-doped crystals exhibit the presence of acceptors with an ionization energy of 36 meV, which is atypical of CdTe.     

Effect of deep levels on current excitation in 6H-SiC diodes

The results of an experimental study of deep levels in the p-base of 6H-SiC diodes are presented. A deep level of unknown origin, with ionization energy E _c -1.45 eV, acts as an effective recombination center for minority carriers, and controls recombination processes. A level with ionization energy E _c -0.16 eV is attributed to a nitrogen donor impurity. Electron capture and thermal activation processes associated with this level substantially extend the duration of current relaxation in the p-n junction. Fiz. Tekh. Poluprovodn. 31, 1220–1224 (October 1997)