Midinfrared holmium fiber lasers

The use of the high-power Tm/sup 3+/-doped silica fiber laser as a pump source for Ho/sup 3+/-doped silica and Ho/sup 3+/-doped fluoride fiber lasers for the generation of 2.1-/spl mu/m radiation is demonstrated. The Ho/sup 3+/-doped silica fiber laser produced a maximum output power of 1.5 W at a slope efficiency of /spl sim/82%; one of the highest slope efficiencies measured for a fiber laser. In a nonoptimized but similar fiber laser arrangement, a Ho/sup 3+/-doped fluoride fiber laser produced an output power of 0.38 W at 2.08 /spl mu/m at a slope efficiency of /spl sim/50%. A Raman fiber laser operating at 1160 nm was also used to pump a Ho/sup 3+/-doped fluoride fiber laser operating at a wavelength of 2.86 /spl mu/m. An output power of 0.31W was produced at a slope efficiency of 10%. The energy transfer upconversion process that depopulates the lower laser level in this case operates at a higher efficiency when the pump wavelength is closer to the absorption peak of the /sup 5/I/sub 6/ energy level, however, this energy transfer process does not impede to a great extent the performance of the Ho/sup 3+/-doped fluoride fiber laser based on the /spl sim/2.1/spl mu/m laser transition.     

Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs

We present the first continuous-wave (CW) edge-emitting lasers at 1.5 /spl mu/m grown on GaAs by molecular beam epitaxy (MBE). These single quantum well (QW) devices show dramatic improvement in all areas of device performance as compared to previous reports. CW output powers as high as 140 mW (both facets) were obtained from 20 /spl mu/m /spl times/ 2450 /spl mu/m ridge-waveguide lasers possessing a threshold current density of 1.06 kA/cm/sup 2/, external quantum efficiency of 31%, and characteristic temperature T/sub 0/ of 139 K from 10/spl deg/C-60/spl deg/C. The lasing wavelength shifted 0.58 nm/K, resulting in CW laser action at 1.52 /spl mu/m at 70/spl deg/C. This is the first report of CW GaAs-based laser operation beyond 1.5 /spl mu/m. Evidence of Auger recombination and intervalence band absorption was found over the range of operation and prevented CW operation above 70/spl deg/C. Maximum CW output power was limited by insufficient thermal heatsinking; however, devices with a highly reflective (HR) coating applied to one facet produced 707 mW of pulsed output power limited by the laser driver. Similar CW output powers are expected with more sophisticated packaging and further optimization of the gain region. It is expected that such lasers will find application in next-generation optical networks as pump lasers for Raman amplifiers or doped fiber amplifiers, and could displace InP-based lasers for applications from 1.2 to 1.6 /spl mu/m.     

2.1 A/mm current density AlGaN/GaN HEMT

The electrical performance of high current density AlGaN/GaN HEMTs is reported. 2 /spl times/ 75 /spl mu/m /spl times/ 0.7 /spl mu/m devices grown on sapphire substrates showed current densities up to 2.1 A/mm under 200 ns pulse condition. RF power measurements at 8 GHz and V/sub DS/=15 V exhibited a saturated output power of 3.66 W/mm with a 47.8% peak PAE.     

Pulsed operation of long-wavelength (/spl lambda//spl sime/11.3 /spl mu/m) MOVPE-grown quantum cascade lasers up to 350 K

Pulsed laser action above room temperature at /spl lambda//spl sime/11.3 /spl mu/m has been achieved in quantum cascade devices grown by metal organic vapour phase epitaxy (MOVPE). The emission wavelength (/spl lambda//spl sime/11.3 /spl mu/m) is the longest reported for QC lasers grown with this technique. The peak output power at 77 K is approximately 315 mW, decreasing to /spl sime/100 mW at room temperature. The devices display laser operation up to at least 350 K.     

High-power highly reliable 1.02-1.06-/spl mu/m InGaAs strained-quantum-well laser diodes

By growing the InGaAs active layer at temperatures lower than in conventional growth, we extended the lasing wavelength and presented the high reliability in InGaAs strained-quantum-well laser diodes. Equivalent I-L characteristics were obtained for 1.02-, 1.05-, and 1.06-/spl mu/m laser diodes with a cavity length of 1200 /spl mu/m. Maximum output power as high as 800 mW and fundamental transverse mode operation at up to 400 mW were obtained at 1.06 /spl mu/m and an 1800-/spl mu/m cavity. Stable operation was observed for over 14 000 h under auto-power-control of 225 mW at 50/spl deg/C for the 1.02-, 1.05-, and 1.06-/spl mu/m lasers with a 900-/spl mu/m cavity.     

Neodymium-doped cladding-pumped aluminosilicate fiber laser tunable in the 0.9-/spl mu/m wavelength range

A tunable high-power cladding-pumped neodymium-doped aluminosilicate fiber laser is demonstrated. The maximum power reached was 2.4 W with a slope efficiency of 41% and a threshold pump power of 1.68 W, both with respect to launched pump power, when cladding pumped by two 808-nm diode pump sources at both fiber ends. The dependence of the tuning range on the fiber length is investigated. The tuning range changed from 922 to 942 nm for a 25-m-long fiber to 908-938 nm with a 14-m-long fiber, because of reabsorption effects. The output linewidth was 0.26 nm in a diffraction-limited beam. Operation on the challenging 0.9-/spl mu/m three-level transition in neodymium-doped double-clad fiber laser was facilitated by a W-type core refractive index profile. This filtered out the unwanted and competing strong transition at 1.06 /spl mu/m while guidance of 0.9 /spl mu/m remained intact.     

1.47 /spl mu/m Tm/sup 3+/:ZBLAN fibre laser pumped at 1.064 /spl mu/m

A large core area (1257 /spl mu/m/sup 2/) Tm/sup 3+/-doped ZBLAN fibre laser operated at 1.47 /spl mu/m is demonstrated. The pump source is a Nd:YAG laser operated at 1.064 /spl mu/m. A laser output power of 1.56 W continuous wave was obtained for 5.2 W of launched pump power. The slope efficiency with respect to the launched pump power was measured to be 33%.     

Semiconductor all-optical modulator for synchronization of independent fiber laser oscillators and active mode-locking

Using an optically driven nonlinear semiconductor mirror, we have synchronized a 1.56-/spl mu/m mode-locked erbium fiber laser to the pulse train from a mode-locked ytterbium fiber laser operating at 1.05 /spl mu/m. We demonstrate that a robust active or passive mode-locked picosecond pulse operation and tight control of the repetition rate can be obtained resulting in a large value of the locking tolerance for the slave laser cavity mismatch exceeding 250 /spl mu/m.     

Non-photorefractive CW Tm-indiffused Ti:LiNbO/sub 3/ waveguide laser operating at room temperature

We report laser operation at 1.81 /spl mu/m and 1.85 /spl mu/m in a Tm/sup 3+/:LiNbO/sub 3/ Ti-diffused waveguide doped by thermal indiffusion at high temperature. We believe this is the first time lasing has been seen in Tm:LiNbO/sub 3/ at room temperature. Continuous-wave operation was achieved at room temperature with a threshold of 42 mW launched pump power. The output power was observed to be stable, without any sign of photorefractive damage.     

Mid-infrared (8.5 /spl mu/m) semiconductor lasers operating at room temperature

The room-temperature pulsed operation of a semiconductor laser emitting at 8.5 /spl mu/m is reported. This device is an optimized vertical transition quantum cascade (QC) laser. At 300 K the peak output power from a single facet is 15 mW, and the current density at threshold is /spl sim/8 kA/cm/sup 2/. The temperature dependence of the threshold current density is described by a high T/sub 0/ (107 K) in the 200-320 K temperature range.     

Room-temperature continuous-wave 1.55 /spl mu/m GaInNAsSb laser on GaAs

The first low-threshold 1.55 /spl mu/m lasers grown on GaAs are reported. Lasing at 1.55 /spl mu/m was observed from a 20/spl times/2400 /spl mu/m as-cleaved device with a room-temperature continuous-wave threshold current density of 579 A/cm/sup 2/, external efficiency of 41%, and 130 mW peak output power. The pulsed threshold current density was 550 A/cm/sup 2/ with >600 mW peak output power.     

CO/sub 2/ laser processing of alumina (Al/sub 2/O/sub 3/) printed circuit board substrates

We report the results of an investigation of the laser-material interaction processes involved in laser drilling of alumina, through the use of an enhanced peak power (2.5 kW) CO/sub 2/ laser and novel temporal pulse formats. Peak power was varied from 30 W to 2 kW for pulses of constant energy to observe the effect produced on scribe depth. High-speed videography of hole formation has been combined with microscopic analysis to investigate the key processes involved in laser processing of alumina. Plasma screening was observed for short, high peak power laser pulses, and optimal scribing was achieved in the weakly plasma absorbing regime. A new processing technique for scribing alumina has been developed, which exploits the fast response of the laser to produce novel temporal pulse shapes, which can be modified to generate cleaner holes. Scribe speeds of up to 280 mm/spl middot/s/sup -1/ were obtained for scribe holes >200 /spl mu/m deep and 150 /spl mu/m apart, with no material plugging the hole, in 0.635-mm-thick 96% alumina.     

Double-pass copper vapor laser master-oscillator power-amplifier systems: generation of flat-top focused beams for fiber coupling and percussion drilling

In this paper, a compact master-oscillator power-amplifier laser system incorporating telescopic beam expansion in a high-gain double-pass amplifier is presented. A miniature (0.5 W) master-oscillator copper vapor laser is used to efficiently extract over 37 W of high-beam-quality (full transverse coherence) output power from a kinetically enhanced nominally 35-W copper vapor laser at 12-kHz pulse repetition frequency. By configuring the oscillator for low coherence output and using a multimode optical fiber between the oscillator and the double-pass amplifier, a high-power (34 W) low-divergence output beam having a well-defined flat-top far-field beam profile was also produced. The flat-top farfield beam profile arises from control of the spatial coherence of a flat-top near-field beam, rather than the usual techniques for producing flattened Gaussian beams from coherent Gaussian beams. Use of the flat-top focused beam for high-speed percussion drilling of high quality 100-/spl mu/m diameter holes in metals was demonstrated, as well as high-power (34-W average power, 80-kW peak power) damage-free power transmission through 100-/spl mu/m core diameter step-index optical fibers.     

35-dB gain Tm-doped ZBLYAN fiber amplifier operating at 1.65 /spl mu/m

We demonstrate the first high gain rare-earth-doped fiber amplifier operating at 1.65 /spl mu/m. It consists of ZBLYAN fiber with a Tm/sup 3+/-doped core and Tb/sup 3+/-doped cladding, pumped by 1.22 /spl mu/m laser diodes. It is possible to achieve efficient amplification with Tm/sup 3+/ ions if their amplified spontaneous emission (ASE) in the 1.75 to 2.0 /spl mu/m wavelength region is suppressed by doping Tb/sup 3+/ ions in the cladding. A two-stage-type fiber amplifier is constructed and a signal gain of 35 dB is achieved for a pump power of 140 mW. A gain over 25 dB is realized in the 1.65 /spl mu/m to 1.67 /spl mu/m wavelength region.     

Er-Yb femtosecond ring fiber oscillator with 1.1-W average power and GHz repetition rates

We report an all-fiber passively mode-locked femtosecond laser oscillator based on the heavily doped Er-Yb phosphate-glass active fiber. Only 20 cm of the gain fiber is sufficient to produce as much as 1.1 W of average output power at 1.5 /spl mu/m directly from the oscillator. The laser can be harmonically mode-locked at repetition rates ranging from 1.7 to 7.2 GHz by adjusting the polarization bias in the cavity. The pulsewidth varies from 300 to 570 fs at the lowest and the highest repetition rate, respectively, and the maximum peak pulse power exceeds 1 kW.     

High-performance 1.5 /spl mu/m GaInNAsSb lasers grown on GaAs

Substantially reduced threshold current density and improved efficiency in long-wavelength (>1.4 /spl mu/m) GaAs-based lasers are reported. A 20/spl times/1220 /spl mu/m as-cleaved device showed a room temperature continuous-wave threshold current density of 580 A/cm/sup 2/, external efficiency of 53%, and 200 mW peak output power at 1.5 /spl mu/m. The pulsed threshold current density was 450 A/cm/sup 2/ with 1145 mW peak output power.     

Short wavelength (/spl lambda//spl sim/4.3 /spl mu/m) high-performance continuous-wave quantum-cascade lasers

We report continuous-wave (CW) operation of a 4.3-/spl mu/m quantum-cascade laser from 80 K to 313 K. For a high-reflectivity-coated 11-/spl mu/m-wide and 4-mm-long laser, CW output powers of 1.34 W at 80 K and 26 mW at 313 K are achieved. At 298 K, the CW threshold current density of 1.5 kA/cm/sup 2/ is observed with a CW output power of 166 mW and maximum wall-plug efficiency of 1.47%. The CW emission wavelength varies from 4.15 /spl mu/m at 80 K to 4.34 /spl mu/m at 298 K, corresponding to a temperature-tuning rate of 0.87 nm/K. The beam full-width at half-maximum values for the parallel and the perpendicular far-field patterns are 26/spl deg/ and 49/spl deg/ in CW mode, respectively.     

Singly Ho/sup 3+/-doped fluoride fibre laser operating at 2.92 /spl mu/m

A singly Ho/sup 3+/-doped fluoride fibre laser that uses energy transfer upconversion to maintain the population inversion has produced 340 mW at 2.92 /spl mu/m. The /spl sim/1100 nm output from a diode-cladding-pumped Yb/sup 3+/-doped silica fibre laser was used as the pump source and a maximum slope efficiency of 5% was obtained.     

160/spl deg/C pulsed laser operation of AlGaInP-based vertical-cavity surface-emitting lasers

Pulsed lasing operation of a 670 nm AlGaInP-based oxide-confined vertical-cavity surface-emitting laser (VCSEL) at high temperatures is demonstrated. At +120/spl deg/C heatsink temperature output power exceeded 0.5 mW and at +160/spl deg/C 25 /spl mu/W output power was achieved     

85 W Tm/sup 3+/-doped silica fibre laser

An 85 W Tm/sup 3+/-doped silica fibre laser is presented. To the best of the authors' knowledge this is the highest output power achieved by pumping with 793 nm. The slope efficiency was 56%, the threshold 11 W and the output wavelength centred at 2.04 /spl mu/m. The high rate of cross relaxation in this laser provided a quantum efficiency of >130%.