Dependence of Electron Density on Fermi Energy in N-Type Gallium Antimonide

The majority electron density as a function of the Fermi energy is calculated in zinc blende, n-type GaSb for donor densities between 10¹⁶ cm⁻³ and 10¹⁹ cm⁻³. These calculations solve the charge neutrality equation self-consistently for a four-band model (three conduction sub-bands at Γ, L, and X and one equivalent valence band at Γ) of GaSb. Our calculations assume parabolic densities of states and thus do not treat the density-of-states modifications due to high concentrations of dopants, many body effects, and non-parabolicity of the bands. Even with these assumptions, the results are important for interpreting optical measurements such as Raman measurements that are proposed as a nondestructive method for wafer acceptance tests.     

A Systematic Approach for Multidimensional,Closed-Form Analytic Modeling: Effective Intrinsic Carrier Concentrations in Ga1?xAlxAs Heterostructures

A critical issue identified in both the technology roadmap from the Optoelectronics Industry Development Association and the roadmaps from the National Electronics Manufacturing Initiative, Inc. is the need for predictive computer simulations of processes, devices, and circuits. The goal of this paper is to respond to this need by representing the extensive amounts of theoretical data for transport properties in the multi-dimensional space of mole fractions of AlAs in Ga_1−xAl_xAs, dopant densities, and carrier densities in terms of closed form analytic expressions. Representing such data in terms of closed-form analytic expressions is a significant challenge that arises in developing computationally efficient simulations of microelectronic and optoelectronic devices. In this paper, we present a methodology to achieve the above goal for a class of numerical data in the bounded two-dimensional space of mole fraction of AlAs and dopant density. We then apply this methodology to obtain closed-form analytic expressions for the effective intrinsic carrier concentrations at 300 K in n-type and p-type Ga_1−xAl_xAs as functions of the mole fraction x of AlAs between 0.0 and 0.3. In these calculations, the donor density N_D for n-type material varies between 10¹⁶ cm⁻³ and 10¹⁹ cm⁻³ and the acceptor density N_A for p-type materials varies between 10¹⁶ cm⁻³ and 10²⁰ cm⁻³. We find that p-type Ga_1−xAl_xAs presents much greater challenges for obtaining acceptable analytic fits whenever acceptor densities are sufficiently near the Mott transition because of increased scatter in the numerical computer results for solutions to the theoretical equations. The Mott transition region in p-type Ga_1−xAl_xAs is of technological significance for mobile wireless communications systems. This methodology and its associated principles, strategies, regression analyses, and graphics are expected to be applicable to other problems beyond the specific case of effective intrinsic carrier concentrations such as interpreting scanning capacitance microscopy data to obtain two-dimensional doping profiles.     

Estimation of Concentration and Bonding Environment of Water Dissolved in Common Solvents Using Near Infrared Absorptivity

Integrated near infrared (NIR) absorbance has been used to determine the absorptivity of the υ₂ + υ₃ combination band of the asymmetric stretch (υ2) and the bending vibration (υ3) for water in several organic solvents. Absorptivity measured in this way is essentially constant across the absorption envelope and is found to be 336 L mol⁻¹ cm⁻¹ with a standard deviation of 4 L mol⁻¹ cm⁻¹ as estimated from a least squares fit of a straight line to data from water concentrations between 0.01 mol/L and 0.06 mol/L. Absorptivity measured from the peak maximum of the υ2 + υ3 combination band of water varies with the type of hydrogen bonding of the water molecule because the shape of the NIR absorption envelope changes with the hydrogen bonding.Because the integrated NIR absorptivity of the υ₂ + υ₃ combination band of water is essentially constant across the absorption envelope, the NIR absorption envelope reflects the distribution of hydrogen bonding of the water. The shape and location of the absorption envelope appear to be governed mostly by the number of hydrogen bonds from the water molecules to easily polarized atoms. Water that is a donor in hydrogen bonds to atoms which are not easily polarized (such as the oxygen of a typical carbonyl group) absorbs near 5240 cm⁻¹ to 5260 cm⁻¹. Water that donates one hydrogen bond to an easily polarized atom (such as a water molecule oxygen) absorbs near 5130 cm⁻¹ to 5175 cm⁻¹, and water that donates two hydrogen bonds to easily polarized atoms is estimated to absorb near 5000 cm⁻¹ to 5020 cm⁻¹. Water donating two hydrogen bonds to other water molecules may be said to be in a water-like environment. In no case does a small amount of water absorbed in a host material appear to have a water-like environment.     

Electronic conduction in La-based perovskite-type oxides

A systematic study of La-based perovskite-type oxides from the viewpoint of their electronic conduction properties was performed. LaCo_0.5Ni_0.5O_3±δ was found to be a promising candidate as a replacement for standard metals used in oxide electrodes and wiring that are operated at temperatures up to 1173 K in air because of its high electrical conductivity and stability at high temperatures. LaCo_0.5Ni_0.5O_3±δ exhibits a high conductivity of 1.9 × 10³ S cm⁻¹ at room temperature (R.T.) because of a high carrier concentration n of 2.2 × 10²² cm⁻³ and a small effective mass m∗ of 0.10 m_e. Notably, LaCo_0.5Ni_0.5O_3±δ exhibits this high electrical conductivity from R.T. to 1173 K, and little change in the oxygen content occurs under these conditions. LaCo_0.5Ni_0.5O_3±δ is the most suitable for the fabrication of oxide electrodes and wiring, though La_1−xSr_xCoO_3±δ and La_1−xSr_xMnO_3±δ also exhibit high electronic conductivity at R.T., with maximum electrical conductivities of 4.4 × 10³ S cm⁻¹ for La_0.5Sr_0.5CoO_3±δ and 1.5 × 10³ S cm⁻¹ for La_0.6Sr_0.4MnO_3±δ because oxygen release occurs in La_1−xSr_xCoO_3±δ as elevating temperature and the electrical conductivity of La_0.6Sr_0.4MnO_3±δ slightly decreases at temperatures above 400 K.     

BiFeO3-doped (Na0.5K0.5)NbO3 lead-free piezoelectric ceramics

Lead-free piezoelectric ceramics (1−x)(Na_0.5K_0.5)NbO₃-xBiFeO₃ (x=0∼0.07) were synthesized by the solid-state reaction. Differential scanning calorimetry (DSC) measurements revealed that an increase in the amount of BiFeO₃ dopant resulted in a decrease in the orthorhombic-tetragonal and tetragonal-cubic phase transition temperature of the material. One percent BiFeO₃ additive suppressed grain growth, which not only benefits the sintering of ceramics but also enhances the piezoelectric and ferroelectric properties, where d₃₃=145pC/N, k_p=0.31, Q_m=80, P_r=11.3 μC cm⁻² and E_c=16.5 kV cm⁻¹. As x_BF>0.01, both piezoelectric and ferroelectric properties decreased rapidly with an increasing amount of dopant.     

Compressibility of Natural Rubber at Pressures Below 500 kg/cm2

The specific volumes of unvulcanized natural rubber and of a peroxide-cured vulcanizate of natural rubber were measured at pressures of 1–500 kg/cm² at temperatures from 0 to 25 °C. Observations on mercury-filled dilatometers were made through a window in the pressure system. No time effects or hysteresis phenomena were observed. The specific volume V in cm³/e over the range studied can be represented by V = V_0,25{1 + A(t ? 25)}{1 + [α₂₅ + k₁(t ? 25)]P + [β₂₅ + k₂(t ? 25)]P²}where P is the pressure in kg/cm², and t the temperature in °C. The constants for the unvulcanized and for the peroxide-cured samples are:

• V₀,₂₅= 1.0951 and 1.1032 cm³/g;
• 10⁴A = 6.54 and 6.36 per degree;
• 10⁶α₂₅= −50.5 and −50.4 (kg/cm²)⁻¹;
• 10⁶k₁ = −0.227 and −0.203 per degree;
• 10⁹β₂₅= 10 and 11.5 (kg/cm²)⁻²;
• and 10⁹k₂=0.048 and 0.073 per degree, respectively. The compressibility of unvulcanized natural rubber at 25° and 1 kg/cm² is thus 50.5×10⁻⁶ (kg/cm²)⁻¹ falling to 40.6×10⁻⁶ (kg/cm²) ⁻¹ at a pressure of 500 kg/cm². It is concluded that a low degree of vulcanization produces no significant changes in the constants listed. The values are not far different from those obtained by extrapolating to zero sulfur content the observations of Scott on the rubbersulfur system. Calculations of values of compressibility (and its reciprocal the bulk modulus), “internal pressure”, bulk wave velocity, difference between specific heats, and several other physical properties are in reasonable agreement with those obtained by direct observation by other workers. For the prediction of values at pressures above 500 kg/cm² the use of the Tait equation is recommended.

     

Self-Broadening of Carbon Monoxide in the 2 v and 3 v Bands

The self-broadening of carbon monoxide has been measured for the 2 v and 3 v bands with pressures up to 3.5 atmospheres. A grating spectrometer of high resolving power was used for the measurements and the correction for finite slits was small. The corrections varied from 3 to 20 percent for the different conditions of measurement. The half-widths per atmosphere, γ°, decreased from 0.089 cm⁻¹ for |m| = 1 to 0.053 cm⁻¹ for |m| = 21. The half-widths are compared with those obtained by other investigators and it is shown that the results reported in this work fall in between the self-broadening values previously obtained.     

The current–voltage characteristics of heterostructures formed by MEH-PPV spin-coated on n-type GaAs and n-type porous GaAs

P–N heterostructures are formed by depositing the poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene-vinylene) MEH-PPV on n-type GaAs(100) substrate and on n-type porous GaAs. The elaborated heterostructures are studied by current–voltage measurements. Thermionic emission is used to model the heterostructures behaviors and to extract parameters as ideality factor and zero bias barrier high. Such model also appears to be useful as a new approach for calculating hole concentration in MEH-PPV deposited on n-type GaAs (N_a = 2.2 × 10¹⁷ cm^− 3). The zero bias barrier height in both heterostructures were found to be close to the ionization energy difference of isolated MEH-PPV and n-type GaAs and the ideality factor values are found to be high. Such high values are suggested to be due to the existence of high density of trap. This is preliminary evidenced by calculating the trap density using space charge limited conductivity (SCLC) characterized by an exponential distribution of trapping levels in both heterostructures.     

Analysis of Two Infrared Bands of CH2D2

Two infrared absorption bands of CH₂D₂ have been analyzed in the semirigid rotor approximation. These are the A-type band at 2671.67 cm⁻¹ and the C-type band at 4425.61 cm⁻¹. The A-type band has previously been assigned as v₃+v₉, and the C-type band is tentatively assigned as v₃+v₆ The upper state of the A-type band is perturbed presumably by the close lying level 2v₅. This interaction has not been investigated. The following values were found for the rotational constants of the ground vibrational state: A₀=4.303 cm⁻¹, B₀= 3.504 cm⁻¹, C₀= 3.049 cm⁻¹.     

Some Vibrational-Rotational Bands of Deuterated Methanes

A parallel band at 2,200 cm⁻¹ and a perpendicular band at 2,780 cm⁻¹ of CH₃D have been observed under high resolution and analysed. The analysis of the perpendicular band revealed the presence of l-type doubling in the doubly degenerate excited state. From the analysis of the parallel band it is found that B₀= 3.880 cm⁻¹. A hybrid band of CD₃H has been observed near 2,600 cm⁻¹. Both active components, A and E are observed and analysed. The ground state B₀ value found from this analysis is in good agreement with previous determinations.     

Acoustic Eigenvalues of a Quasispherical Resonator: Second Order Shape Perturbation Theory for Arbitrary Modes

The boundary-shape formalism of Morse and Ingard is applied to the acoustic modes of a deformed spherical resonator (quasisphere) with rigid boundaries. For boundary shapes described by r = a [1 − ε ℱ(θ, ϕ)], where ε is a small scale parameter and ℱ is a function of order unity, the frequency perturbation is calculated to order ε². The formal results apply to acoustic modes whose angular dependence is designated by the indices ℓ and m. Specific examples are worked out for the radial (ℓ = 0) and triplet (ℓ = 1) modes, for prolate and oblate spheroids, and for triaxial ellipsoids. The exact eigenvalues for the spheroids, and eigenvalue determined with finite-element calculations, are shown to agree with perturbation theory through terms of order ε². This work is an extension of the author’s previous papers on the acoustic eigenfrequencies of deformed spherical resonators, which were limited to the second-order perturbation for radial modes [J. Acoust. Soc. Am. 71, 1109-1113 (1982)] and the first order-perturbation for arbitrary modes [J. Acoust. Soc. Am. 79, 278–285 (1986)].     

High-pressure high-temperature synthesis and structure of α-tetragonal boron

Microcrystals of α-tetragonal (α-t) boron with unit cell parameters a=9.05077(6) and c=5.13409(6) Å and measured density 2.16–2.22 g cm⁻³ were obtained by pyrolysis of decaborane B₁₀H₁₄ at pressures of 8–9 GPa and temperatures of 1100–1600 ^○C. The crystal structure is in good agreement with the model proposed by Hoard et al (1958 J. Am. Chem. Soc. 80 4507). However, compared to the original model, we found small deformations of icosahedra and changes in the interatomic distances within the unit cell of the synthesized α-t boron.     

Infrared Absorption Spectrum of Nitrous Oxide (N2O) From 1830 cm?1 to 2270 cm?1

The frequencies of the vibration-rotation spectrum of N₂O have been measured from 1830 cm⁻¹ to 2270 cm⁻¹. A number of weak bands have been measured and assigned to “hot bands’’ and isotopic species in normal abundance. By using the Ritz principle and previously measured bands the bending frequency (v₂) is calculated as 588.78₀ cm⁻¹. Frequencies are given for lines arising from the three principal transitions found in this region.     

Boronic acid-modified magnetic materials for antibody purification

Aminophenyl boronic acids can form reversible covalent ester interactions with cis-diol-containing molecules, serving as a selective tool for binding glycoproteins as antibody molecules that possess oligosaccharides in both the Fv and Fc regions. In this study, amino phenyl boronic acid (APBA) magnetic particles (MPs) were applied for the magnetic separation of antibody molecules. Iron oxide MPs were firstly coated with dextran to avoid non-specific binding and then with 3-glycidyloxypropyl trimethoxysilane to allow further covalent coupling of APBA (APBA_MP). When contacted with pure protein solutions of human IgG (hIgG) and bovine serum albumin (BSA), APBA_MP bound 170 ± 10 mg hIgG g⁻¹ MP and eluted 160 ± 5 mg hIgG g⁻¹ MP, while binding only 15 ± 5 mg BSA g⁻¹ MP. The affinity constant for the interaction between hIgG and APBA_MP was estimated as 4.9 × 10⁵ M⁻¹ (K_a) with a theoretical maximum capacity of 492 mg hIgG adsorbed g⁻¹ MP (Q_max), whereas control particles bound a negligible amount of hIgG and presented an estimated theoretical maximum capacity of 3.1 mg hIgG adsorbed g⁻¹ MP (Q_max). APBA_MPs were also tested for antibody purification directly from CHO cell supernatants. The particles were able to bind 98% of IgG loaded and to recover 95% of pure IgG (purity greater than 98%) at extremely mild conditions.     

Can a Pressure Standard be Based on Capacitance Measurements?

We consider the feasibility of basing a pressure standard on measurements of the dielectric constant ϵ and the thermodynamic temperature T of helium near 0 °C. The pressure p of the helium would be calculated from fundamental constants, quantum mechanics, and statistical mechanics. At present, the relative standard uncertainty of the pressure u_r(p) would exceed 20 × 10⁻⁶, the relative uncertainty of the value of the molar polarizability of helium A_ϵ calculated ab initio. If the relativistic corrections to A_ϵ were calculated as accurately as the classical value is now known, a capacitance-based pressure standard might attain u_r(p) < 6 × 10⁻⁶ for pressures near 1 MPa, a result of considerable interest for pressure metrology. One obtains p by eliminating the density from the virial expansions for p and ϵ − 1. If ϵ − 1 were measured with a very stable, 0.5 pF toroidal cross capacitor, the small capacitance and the small values of ϵ − 1 would require state-of-the-art capacitance measurements to achieve a useful pressure standard.     

Preparation and Calibration of Carrier-Free 209Po Solution Standards

Carrier-free ²⁰⁹Po solution standards have been prepared and calibrated. The standards, which will be disseminated by the National Institute of Standards and Technology as Standard Reference Material SRM 4326, consist of (5.1597 ±0.0024) g of a solution of polonium in nominal 2 mol · L⁻¹ hydrochloric acid (having a solution density of (1.031±0.004) g · mL⁻¹ at 22 °C) that is contained in 5 mL flame-sealed borosilicate glass ampoules, and are certified to contain a ²⁰⁹Po alpha-particle emission rate concentration of (85.42±0.29) s⁻¹ · g⁻¹ (corresponding to a ²⁰⁹Po activity concentration of (85.83 ±0.30) Bq · g⁻¹) as of the reference time of 1200 EST 15 March 1994. The calibration was based on 4πα liquid scintillation (LS) measurements with two different LS counting systems and under wide variations in measurement and sample conditions. Confirmatory measurements by 2πα gas-flow proportional counting were also performed. The only known radionuclidic impurity, based on α- and photon-emission spectrometry, is a trace quantity of ²⁰⁸Po. The ²⁰⁸Po to ²⁰⁹Po impurity ratio as of the reference time was 0.00124 ±0.00020. All of the above cited uncertainty intervals correspond to a combined standard uncertainty multiplied by a coverage factor of k = 2. Although ²⁰⁹Po is nearly a pure α emitter with only a weak electron capture branch to ²⁰⁹Bi, LS measurements of the ²⁰⁹Po a decay are confounded by an a transition to a 2.3 keV (J^π= 1/2⁻) level in ²⁰⁵Pb which was previously unknown to be a delayed isomeric state.     

Experimental and Theoretical Study of Kinetics of Bulk Crystallization in Poly(Chlorotrifluoroethylene)

The rate of isothermal bulk crystallization of poly(chlorotrifluoroethylene), T_m=221° C, was measured from 170° to 200° C. The intrinsic bulk crystallization, which accurately followed an n = 2 law, was shown to be a result of the injection of primary nuclei sporadically in time, with one-dimensional growth of centers derived from these nuclei. The crystallites are exceedingly small. The one-dimensional growth process was isolated by nucleating specimens with seed crystals, and its temperature-dependence determined between 191° and 205° C. The seed crystal isotherms followed an n = 1 law. The temperature coefficients of the rate of nucleation and the rate of growth were both strongly negative.A theory of homogeneous nucleation that takes into account the segmental character of the polymer chains is developed in some detail. A cylindrical nucleus is assumed. In the temperature range near the melting point, region A, where the radius and length of the nucleus are unrestricted, the rate of nucleation is shown to be proportional to exp(−α/T³ΔT²). The nucleation rate is proportional to exp (−β/T²ΔT) in region B, which extends from somewhat below the melting point to considerably lower temperatures; the length of the nucleus has a constant value l₀ in this region, but the radius is unrestricted. (In the above expressions, α and β are constants). Finally, at sufficiently low temperatures, region C is entered. Under certain circumstances, the rate of nucleation in region C will be extremely rapid, and correspond to a “nucleative collapse” of the supercooled liquid state. A calculation of the one-dimensional growth rate shows that it is proportional to exp(−γ/T²ΔT) where β=γ.A careful analysis of the experimental data obtained between 170° and 200° C clearly showed that both the rate of nucleation and the rate of growth were proportional to exp(−β/T²ΔT), and not exp(−α/T³ΔT²). The primary nucleation event was thus of type B in this interval. A detailed analysis of the data is given, and surface free energies and the dimensions of the nuclei quoted. Quenching experiments, where the polymer was crystallized well below 170° C, gave a firm indication of the existence of region C.An experimental study was made of the extremely slow crystallization process that prevailed when the degree of crystallinity became high. The onset of this stage of the crystallization was interpreted as being the result of a massive degree of impingement. This interpretation is justified by the calculations of Lauritzen, who has given a theory of impingements that predicts a pseudoequilibrium degree of crystallinity.As indicated above, the growth process originating at homogeneous nuclei is not of a three-dimensional or spherulitic character in the region of study. Such stray spherulites as do appear in this region are shown to originate at heterogeneities. The possibility that the intrinsic growth process may become three-dimensional at crystallization temperatures sufficiently near T_m is discussed.     

Monolithic integration of III-V optical interconnects on Si using SiGe virtual substrates

Working optical links epitaxially grown by atmospheric MOCVD and fabricated on Si via SiGe virtual substrates are demonstrated for the first time. The SiGe virtual substrates are graded from Si substrates to 100% Ge. Because of the 0.07% lattice mismatch between GaAs and Ge, high-quality GaAs-based thin films with threading dislocation densities <3×10⁶ cm^–2 were realized. The optical link consists of a GaAs PIN-LED and a GaAs PIN detector diode. A vertical-coupling scheme was utilized to couple devices with a Al_0.15Ga_0.85As waveguide. Waveguides of varying length, Y-junctions, and bends were fabricated. The straight waveguides exhibited loss of approximately 144 dB cm^–1.An erratum to this article can be found at     

Laser alloyed tin layers on GaAs

A Q-switched ruby laser has been used to alloy deposited layers of tin on (100) GaAs. The tin concentration in the GaAs substrates has been investigated by electrical measurements, electron probe microanalysis, Rutherford backscattering and transmission electron microscopy. The results show that a high concentration of tin diffuses into the GaAs for an energy density up to 0.6 J cm^–2 and the electrical properties improve with increasing energy density. However, at high energy densities this leads to the introduction of damage near the GaAs surface. At the highest energy density of 2 J cm^–2, very complex dislocation networks are produced and a cellular structure results along with microcracking of the surface. This produces high levels of residual strain in the surface.     

Estimating Bounds on Collisional Relaxation Rates of Spin-Polarized 87Rb Atoms at Ultracold Temperatures

We present quantum scattering calculations for the collisional relaxation rate coefficient of spin-polarized ⁸⁷Rb(f = 2,m = 2) atoms, which determines the loss rate of cold Rb atoms from a magnetic trap. Unlike the lighter alkali atoms, spin-polarized ⁸⁷Rb atoms can undergo dipolar relaxation due to both the normal spin-spin dipole interaction and a second-order spin-orbit interaction with distant electronic states of the dimer. We present ab initio calculations for the second-order spin-orbit terms for both Rb₂ and Cs₂. The corrections lead to a reduction in the relaxation rate for ⁸⁷Rb. Our primary concern is to analyze the sensitivity of the ⁸⁷Rb trap loss to the uncertainties in the ground state molecular potentials. Since the scattering length for the a³Σ⁺_u state is already known, the major uncertainties are associated with the X¹Σ⁺_g potential. After testing the effect of systematically modifying the short-range form of the molecular potentials over a reasonable range, and introducing our best estimate of the second-order spin-orbit interaction, we estimate that in the low temperature limit the rate coefficient for loss of Rb atoms from the f = 2,m = 2 state is between 0.4 × 10⁻¹⁵ cm³/s and 2.4 × 10⁻¹⁵ cm³/s (where this number counts two atoms lost per collision). In a pure condensate the rate coefficient would be reduced by 1/2.