基于金纳米笼和MoS2的1 123 nm被动调Q Nd: YAG激光器

采用电流置换反应成功制备了金纳米笼溶液并首次验证了其在1123 nm处的非线性饱和吸收特性,作为对比,同样制备了MoS₂饱和吸收体。分别将金纳米笼和MoS₂作为饱和吸收体,实现了中心波长为1 123 nm的Nd: YAG激光器的调Q运转。在MoS₂为饱和吸收体的调Q激光器中,当泵浦功率为6.81 W时,得到的最大平均输出功率为208 mW,最短脉冲宽度为412 ns,最大脉冲重复率为233 kHz。在金纳米笼为饱和吸收体的调Q激光器中,当泵浦功率为6.04 W时,得到的最大平均输出功率为221 mW,最短脉冲宽度为253 ns,最大脉冲重复率为326 kHz。与MoS₂调Q激光器的实验结果相比,金纳米笼调Q激光器获得的输出功率和效率更高,脉冲宽度更窄,重复率更高。结果证明了金纳米笼在近红外波段激光器中用作饱和吸收体的巨大潜力。     

Efficient high-power diode-end-pumped TEM00 Nd:YVO4 laser

We demonstrate a compact and efficient diode-end-pumped TEM₀₀ laser with output power of 25.2 W for 52 W of incident pump power by use of a single YVO₄ crystal with a Nd concentration of 0.3 at.%. In Q-switched operation 21-W of average power at a pulse repetition rate of 100 kHz and ~1.1-mT pulse energy at a pulse repetition rate of 10 kHz were produced. At 10 kHz, the pulse width is around 10 ns and the peak power is higher than 100 kW     

A Ku band internally matched high power GaN HEMT amplifier with over 30%of PAE

正We report a high power Ku band internally matched power amplifier(IMPA) with high power added efficiency(PAE) using 0.3μm AlGaN/GaN high electron mobility transistors(HEMTs) on 6H-SiC substrate.The internal matching circuit is designed to achieve high power output for the developed devices with a gate width of 4 mm.To improve the bandwidth of the amplifier,a T type pre-matching network is used at the input and output circuits,respectively.After optimization by a three-dimensional electromagnetic(3D-EM) simulator,the amplifier demonstrates a maximum output power of 42.5 dBm(17.8 W),PAE of 30%to 36.4%and linear gain of 7 to 9.3 dB over 13.8-14.3 GHz under a 10%duty cycle pulse condition when operated at V_(ds) = 30 V and V_(gs)=—4 V.At such a power level and PAE,the amplifier exhibits a power density of 4.45 W/mm.     

Subnanosecond multi-gigawatt CO2 laser

A semiconductor switching technique has been utilized to produce 30-300 ps variable duration CO₂ laser pulses of 0.5-MW peak power. Eight passes through a 1.2-m long, UV-preionized, 3-atm TE CO₂ amplifier raise the output laser peak power to the 10¹⁰ W level. Sampling the amplifier gain in linear and saturated regimes using CO₂ laser radiation ranging from CW to 30 ps pulse length permits comparison with computer modeling of picosecond CO₂ pulse amplification. The potential for further peak power scaling of picosecond molecular lasers is discussed     

基于光参量振荡的35 kHz中红外激光器研究

研究了基于高重频1064 nm激光泵浦的3.8 μm周期性极化铌酸锂(periodically poled LiNbO₃, PPLN)光参量振荡器(optical parametric oscillator, OPO)。采用Nd :YVO₄声光调Q激光器,获得了光束质量良好,重复频率25~35 kHz,最大平均输出功率6.1 W,脉冲宽度59.1 ns的1064 nm基频激光。模拟分析了在1064 nm激光泵浦下,极化周期Λ=29.5 μm MgO:PPLN晶体的温度调谐特性。通过实验,在25~200 ℃的温度范围内,获得了3599.6~3845.5 nm连续变化的中红外激光。当PPLN晶体温度为30 ℃,基频光功率为6.1 W时,得到了最大输出功率0.45 W ,重复频率为35 kHz的3845.5 nm中红外光输出。     

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high- power microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density of 5.3 W/mm at V_gs = -4 V and V_ds = 50 V and a maximum power added efficiency of 51.5% at V_gs = -4 V and V_ds = 30 V at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.     

小型化高光束质量MgO: PPLN中红外光参量振荡器

为满足中红外激光的工程应用需求,研制了基于MgO: PPLN晶体的小型化高光束质量中红外光参量振荡器（MgO: PPLN-OPO）。泵浦源采用声光调Q Nd: YVO₄激光器,通过泵浦MgO: PPLN晶体,获得了高效率、高峰值功率中红外激光输出,在MgO: PPLN-OPO谐振腔中加入光阑,有效提高了中红外激光光束质量,整个激光器采用热电制冷与风冷相结合的散热方式,实现了激光器的小型化。实验结果表明:采用无水冷的声光调Q Nd: YVO₄激光器能够实现最高9.3 W的1.064 μm脉冲激光输出,光光转换效率为27.2%,峰值功率可达~27.5 kW;在Nd: YVO₄激光器泵浦下,MgO: PPLN-OPO实现了3.765 μm脉冲激光输出,在谐振腔中加入光阑后,MgO: PPLN-OPO的最高输出功率由1.20 W略降至1.08 W,但光束质量有明显提高,M_x2和M_y2因子分别从1.89和1.98优化至1.20和1.29,中红外激光脉冲宽度为8.4 ns,峰值功率达到~4.3 kW。     

波长锁定878.6 nm LD调制泵浦Nd: YVO4自拉曼激光器

报道了一款基于调制共振泵浦技术的Nd:YVO₄自拉曼激光器。针对全固态自拉曼激光器中热效应严重导致的激光器输出功率及光光效率普遍偏低的问题,合理地将共振泵浦技术和调制泵浦技术相结合,实现了激光器的有效热管控,缓解了激光器的热效应,提高了泵浦上限,从而实现了激光器输出功率和光光效率的大幅提高。当泵浦源的调制频率为10 kHz、占空比为40%、平均泵浦功率为30 W、声光Q开关的调制频率为100 kHz时,获得了最大平均功率为8.57 W的1176 nm斯托克斯光输出,相应光光转换效率28.6%。相较于相同泵浦功率的连续泵浦机制下的实验结果,斯托克斯光平均输出功率提高了42%,光光效率提高了8.5%。实验结果表明:共振泵浦和调制泵浦技术相结合的方式可以有效缓解热效应,提高泵浦功率上限,从而提高自拉曼激光器的输出功率和光光效率。     

小型化轴流式非链式脉冲氟化氘激光器

采用轴流循环流动方式更新非链式脉冲氟化氘（DF）激光器工作介质，搭建了一台小型化自引发放电DF激光器实验装置，开展了轴流DF激光器输出性能实验研究。单脉冲工作时，在工作气体配比SF₆∶D₂=10∶1，总气压8 kPa时，实现单脉冲能量800 mJ激光输出，全波半高宽约120 ns，其性能与横流放电非链式脉冲DF激光器相似。重复频率放电时，实现了DF激光器重复频率20 Hz稳定运转，得到的最大输出功率为13.1 W，重频脉冲幅值差优于±5%，并展望了轴流式DF激光器高重频工作的前景。文中提出的轴流式非链式脉冲DF激光器为小型化、工程化中红外光源提供了新的技术途径。     

百瓦级PCFA/LBO倍频绿光皮秒激光器

具有高平均功率的皮秒级脉冲激光在工业加工、空间探测等领域具有重要的应用。但是锁模产生的皮秒种子光因脉冲宽度窄、单脉冲能量低,难以直接通过传统的行波放大实现功率的高效提升,因此也限制了输出脉冲的非线性频率转换效率。文中通过光栅啁啾脉冲展宽器和狭缝,将中心波长为1030 nm、脉冲宽度7 ps、重复频率52 MHz的光纤锁模种子光脉冲宽度展宽至32 ps,且将其光谱宽度控制在1.1 nm,利用两个空气包层光子晶体光纤放大器将功率放大至190 W。最后通过温度相位匹配LiB₃O₅ 晶体实现了平均功率为103.1 W的绿光皮秒脉冲输出,光束质量因子1.17,二次谐波转换效率54.3%。     

A Cool, Sub-0.2 dB Noise Figure GaN HEMT Power Amplifier With 2-Watt Output Power

This paper reports on a S-, C-band low-noise power amplifier (LNPA) which achieves a sub-0.2 dB noise figure (NF) over a multi-octave band and a saturated output power (Psat) of 2 W at a cool temperature of -30degC . The GaN MMIC is based on a 0.2 mum AlGaN/GaN-SiC HEMT technology with an f_T ~ 75 GHz. At a cool temperature of -30degC and a power bias of 15 V-400 mA, the MMIC achieves 0.25-0.45 dB average NF over a 2-8 GHz band and a linear P_1dB of 32.8 dBm ( ~ 2 W) with 25% power-added efficiency (PAE). At a medium bias of 12 V-200 mA, the amplifier achieves 0.1-0.2 dB average NF across the same band and a P_1dB of 32.2 dBm (1.66 W) with 35% PAE. The corresponding saturated output power is greater than 2 W. At a low noise bias of 5 V-200 mA, a remarkable 0.05-0.15 dB average NF is achieved with a P_1dB > 24 dBm and PAE ~ 33%. These results are believed to be the lowest NF ever reported for a multi-octave fully matched MMIC amplifier capable of > 2 W of output power.     

4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz

MESFET's were fabricated using 4H-SiC substrates and epitaxy. The D.C., S-parameter, and output power characteristics of the 0.7 μm gate length, 332 μm gate width MESFET's were measured. At ν_ds =25 V the current density was about 300 mA/mm and the maximum transconductance was in the range of 38-42 mS/mm. The device had 9.3 dB gain at 5 GHz and f_max=12.9 GHz. At V_ds=54 V the power density was 2.8 W/mm with a power added efficiency=12.7%     

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an associated power-added efficiency (PAE) of 63% was measured at V _ds = 48 V on passivated devices. At 10 GHz, an output power density of 11.2 W/mm with a PAE of 58% was achieved for V _ds = 48 V. These results are the highest reported power performance for AlGaN/GaN HEMTs grown by ammonia-MBE and the first reported for ammonia-MBE on SiC substrates.     

调Q锁模运转的全固态Tm:LuAG陶瓷激光器

采用垂直生长法制备的氧化石墨烯（Graphene oxide, GO）作为可饱和吸收体,利用典型“X”型折叠腔在全固态Tm:Lu₃Al₅O₁₂(Tm:LuAG)陶瓷激光器中实现了调Q锁模运转。以790 nm激光二极管(Laser diode, LD)作为泵浦源,当泵浦功率大于8 W时,激光器进入稳定的调Q锁模状态。当输出镜透过率为5%时,连续光最高输出功率为714 mW,斜效率为4.94%。当泵浦达到16 W时,激光器最大输出功率为200 mW , 光谱中心波长为2024 nm,脉冲宽度约为695 ps,对应的锁模脉冲重复频率为108.7 MHz,调Q包络中锁模脉冲的调制深度接近100%。该2 μm超短脉冲激光器在生物医学和激光通讯等领域具有非常重要的应用。     

1 W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOStransistor

In this letter, we present state-of-the-art performance, in terms of output power density, for an RF-power LDMOS transistor. The novel device structure has a dual-layer RESURF of the drift region, which allows for a sub-μm channel length and a high breakdown voltage of 110 V. The output power density is more than 2 W/mm at 1 GHz and a V_DS=70 V, with a stable gain of 23 dB at V_DS=50 V. At 3.2 GHz the power density is over 1 W/mm at V_DS=50 V and 0.6 W/mm at V_DS=28 V. These results are to our knowledge the best ever for silicon power MOSFETs     

High-Brightness Wavelength Beam Combined Semiconductor Laser Diode Arrays

We report the wavelength beam combining of an array of high-power high-brightness 970-nm slab-coupled optical waveguide lasers. A 50-W peak power under quasi-continuous-wave (CW) operation was measured in an output beam with a beam quality of M_x,y ²=1.2, and 30 W under CW operation was measured with a beam quality of M_x,y ²=2     

单级静态高峰值功率灯抽运脉冲Nd∶YAG固体激光器

报道了采用对称平面平行腔结构实现单级静态输出30 kW高峰值功率灯抽运Nd∶YAG固体激光器的研究结果。从速率方程出发,推导出脉冲Nd∶YAG固体激光器的单脉冲能量表达式,模拟出输出镜最佳透过率及最大输出能量。通过实验选取激光器工作的最佳参数,研制出一台高峰值功率灯抽运脉冲Nd∶YAG激光器,理论模拟和最佳实验结果基本一致。激光器在最大输入电压为800 V,脉宽为2 ms时,输出最大单脉冲能量60 J,最大峰值功率30 kW,光束质量M2为5.9,总体电光转换效率3.3%。在最大输入电压为800 V,脉宽为1.5 ms时最大平均功率405 W。采用该激光器切割6 mm低碳钢和4 mm不锈钢,在脉宽为2 ms,频率为6 Hz,峰值功率为30 kW时,切割4 mm不锈钢速度为1 mm/s,切割6 mm低碳钢速度为1.5~2 mm/s。     

Fluorescence and laser operation in single-mode Ti-diffusedNd:MgO:LiNbO3 waveguide structures

The spectral properties of the guided-wave Nd fluorescence and results of laser oscillation in Ti-indiffused single-mode Nd:MgO:LiNbO ₃ waveguides and waveguide cavities, respectively, are reported. The splitting and polarization behavior of the fluorescence lines around 0.9, 1.08, and 1.37 μm were studied. Using a single-mode diode laser as a pump source (λ_p=814.6 nm), an oscillation threshold in an 8-mm-long structure of 2.1-mW absorbed pump power has been obtained. An output power up to 310 μW (limited by the available pump power), a slope efficiency of 16% at power levels >150 μW, and an emission linewidth of 0.21 nm (at λ_s=1085 nm) have been measured     

AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

AlGaN/GaN high-electron mobility transistors on (001)-oriented silicon substrates with a 0.1-mum gamma-shaped gate length are fabricated. The gate technology is based on a silicon nitride (SiN) thin film and uses a digital etching technique to perform the recess through the SiN mask. An output current density of 420 mA/mm and an extrinsic transconductance g_m of 228 mS/mm are measured on 300-mum gate-periphery devices. An extrinsic cutoff frequency f_t of 28 GHz and a maximum oscillation frequency f_max of 46 GHz are deduced from S-parameter measurements. At 2.15 GHz, an output power density of 1 W/mm that is associated to a power-added efficiency of 17% and a linear gain of 24 dB are achieved at V_DS = 30 V and V_GS = -1.2 V.     

Improved Ti:sapphire laser performance with new high figure ofmerit crystals

The continuous-wave (CW) laser performance of Ti:Al₂O ₃ crystals with high figure of merit is described. Using a 0.1% Ti:Al₂O₃ crystal (FOM=1000), output powers of 3.5 W at 800 nm are obtained, pumping with a 9.6 W argon ion laser operating multiline. Continuous tunability of the CW Ti:Al₂O ₃ laser extending from 665 to 1070 nm is also demonstrated for a 5 W pump power