Sub-bandgap photoconductivity and photocapacitance in CIGS thin films and devices

Photoconductivity and photocapacitance of Cu(In,Ga)Se2 and CuGaSe2 thin films and devices induced by sub-bandgap illumination are investigated. Both effects have been attributed to the optical transition from valence band to the same empty levels situated around 0.8-0.9 eV above the valence band. The influence of the metastable states created by illumination and voltage bias on the sub-bandgap response has been studied. The experimental results are discussed in the framework of a model based on negative-U property of a native defect in chalcopyrites, i.e. V_Se-V_Cu divacancy. The arguments are presented that the levels involved in the optical transition observed in photoconductivity and photocapacitance might be antibonding levels of the acceptor configuration of this defect.     

Bi-stable pore size during electrochemical etching of n-type silicon during a thermal ramp

We have investigated the change in size and density of pores during electrochemical etching of n-type (5 Ωcm) silicon under backside illumination and subjected to a thermal ramp. The pore structure was allowed to self organize, and for the parameters reported here this results in macropores with diameters in the ∼ μm order of magnitude range. As the etching progressed under constant current conditions, the electrolyte and the sample heated slowly up in the temperature range 20-60 °C. The resulting pore structure was obtained by scanning electron microscope examination of cross sections of cleaved samples. The temperature ramp caused the pore diameters and pore densities to change abruptly rather than continuously. The change can thus phenomenologically be described as a transition between two stable pore size configurations; bi-stable switching or phase transition. This phenomenon is observed for a range of parameters yielding macropores: current densities between 2-20 mA/cm² and varying light intensity. The transition is between known configurations.     

The effects of native and light induced defects on optoelectronic properties of hydrogenated amorphous silicon–germanium (a-SiGe:H) alloy thin films

Effects of native and light induced defects states in hydrogenated amorphous silicon–germanium alloy thin films with different Ge concentrations have been investigated by using steady-state photoconductivity, dual beam photoconductivity (DBP), transmission spectroscopy and photothermal deflection spectroscopy (PDS) techniques. In the annealed state, sub-bandgap absorption spectra obtained from both PDS and DBP overlap very well at energies above 1.4 eV. However, differences in α (hν) spectrum exist in the lower energy part of absorption spectrum. The α (hν) value measured at 1.0 eV is the lowest for 10% Ge sample and increases gradually as Ge content of the sample increases. In the light soaked state, time dependence of photoconductivity decay obeys to t ^−x power law, where x changes from 0.30 to 0.60 for samples with low Ge content and 0.05–0.1 for samples with high Ge content. Correspondingly, the increase of the sub-bandgap absorption coefficient at lower energies obeys to t ^y power law, where y values are lower than the x value of the same sample. It can be inferred that sub-bandgap absorption and photoconductivity measurements are not controlled by the same set of defects created in the bandgap of alloys.     

Defects in Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Te-based heterostructures grown by molecular beam epitaxy on GaAs(310) substrates

Cd _x Hg_{1 − x} Te-based epitaxial heterostructures grown on [310]-oriented GaAs substrates by molecular beam epitaxy have been studied by atomic force, scanning electron, and high-resolution field emission microscopy. A mechanism of defect formation has been proposed. The microstructure of the epilayer has been investigated in greatest detail. We have analyzed the key features of V-defect formation, in particular using depth profiling of the heterostructures by ion etching. A comparative analysis of the elemental compositions of V-defects and a defect-free region has been performed. The results indicate that, in the central part of the V-defects, the excess tellurium content is ∼2.5% and mercury deficiency is ∼3%. V-defect formation in the heterostructures is related to tellurium precipitation, which initiates nucleation of polycrystalline clusters and dislocation generation in adjacent regions.     

Large defect-induced sub-bandgap photoresponse in semiconductor nanowires via waveguiding excitation

A large defect-induced sub-bandgap photoresponse over a broad spectral range is observed in semiconductor single nanowires via optical waveguiding excitation. Using an evanescent coupling technique, the excitation sub-bandgap light is efficiently transferred from a silica fiber taper into a CdS single nanowire (bandgap ～ 2.46 eV), and is tightly confined and guided through the whole length of the nanowire, which significantly enhances the light-defect interaction compared with the conventional irradiation excitation scheme. Under 593 nm wavelength (～2.09 eV) waveguiding excitation with an input power of 10 pW level at room temperature, a 350 nm diameter 150 μm-length CdS nanowire shows a responsivity of 250 A W( - 1), offering a sub-bandgap photosensitivity five orders of magnitude larger than by irradiation excitation. These results may open opportunities for noninvasive characterization of defect states in semiconductor nanowires, as well as for enabling novel sub-bandgap nanowire devices.     

Reduction effects on the spectral response of ceramic TiO2 photoanodes

Spectral response measurements on ceramic TiO₂ photoanodes prepared in $\text{CO}\text{CO}{}_2$ reducing atmospheres over a range of pO₂ values from 10^?4 to 10^?12 atm. are reported. The results are interpreted in terms of the various defect states of reduced TiO₂. In addition, a sub-bandgap absorption at 2.2eV is attributed to suboxides of titanium produced at the surface during reduction and subsequent d-state transitions under illumination.     

The optical properties of porous silicon produced by metal-assisted anodic etching

Porous silicon (PS) was obtained from n-type (100) mono-crystalline silicon wafers with different metal using two different illumination conditions. The visible photoluminescence (PL) may come from defect-related radiative centers on PS surface and adsorbed hydrogen atoms may be associated to the elimination of irradiative centers on PS surface, which can be proved by the infrared absorption spectra. The metal can be used as catalytic role to increase the etching rate under back illumination, but under front illumination, the metal can cancel light-generated carrier leading to the decrease of etching rate during anodic etching. Furthermore, the change of minority carrier lifetime is opposite to the change of PL efficiency of PS, which can be Confirmed by the results of μ-PCD measurements.     

Study of defect states in a-Se<Subscript>85</Subscript>Te<Subscript>15−<Emphasis Type="Italic">x</Emphasis></Subscript>Pb<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> thin films by space charge limited conduction mechanism

Current–Voltage (I–V) characteristics have been studied at various temperatures in vacuum evaporated thin films of a-Se₈₅Te_15−x Pb _x (x = 0, 2, 4, 6) alloys. These characteristics show that, at low electric fields, an ohmic behaviour is observed. However, at high electric fields (E ∼ 10⁴ V/cm), the current becomes superohmic. At high fields, in case of samples having 0 and 2 at% of Pb, the experimental data fits well with the theory of space charge limited conduction (SCLC) in case of uniform distribution of localized states in the mobility gap. Such type of behaviour is not observed at higher concentration of Pb in the present glassy system due to high conductivity. In these samples, joule heating due to large currents may prohibit the measurement of SCLC. Using the theory of SCLC for the uniform distribution of the traps, the density of localized defect states near Fermi level is calculated for these compositions. The results indicate that the density of defect states near Fermi level increases on addition of Pb to binary Se₈₅Te₁₅alloy. This is explained in terms of electronegativity of Pb as compared to host elements.     

MOS capacitors with metal gate/high-k dielectrics on GaAs bulk substrate

This paper investigates the electrical characteristics at low temperatures through C–V, I–V and conductance measurements to understand the interface behavior of HfO₂ and p-type GaAs bulk substrate. Room temperature interface state density, D _it , estimated for as-deposited Ti–Au/HfO₂/GaAs capacitors was found to be 3.68 × 10¹¹ cm⁻² eV⁻¹. Low temperature measurement suggests that only fast interface states contribute to the conduction process. When the characteristics of two different metal gates were compared, the accumulation capacitance density observed to be 1.4 and 8.98 fF/μm² for Be–Au/HfO₂/GaAs and Ti–Au/HfO₂/GaAs, respectively at 1 MHz.     

Thermal etching of GaAs (1 1 3) surfaces

We discuss scanning electron micrographs and atomic force microscope images of thermally etched GaAs(1 1 3) surfaces. The GaAs(1 1 3)A and GaAs(1 1 3)B surfaces are compared. The polarity of the surface leads to a different morphology for the two surfaces after thermal etching. It is found that the Ga-enriched droplets, which form under As-deficient conditions at higher temperatures, are sitting on characteristic pedestals, which are different for the two faces. The facets occurring after this thermal etching process are identified. They represent thermally favourable surfaces under the arsenic-deficient conditions of the thermal etching process. © 1998 Chapman & Hall     

A generic approach for vertical integration of nanowires

We report on the collective integration technology of vertically aligned nanowires (NWs). Si?and ZnO NWs have been used in order to develop a generic technological process. Both mineral and organic planarizations of the as-grown nanowires have been achieved. Chemical vapour deposition (CVD) oxides, spin on glass (SOG), and polymer have been investigated as filling materials. Polishing and/or etching of the composite structures have been set up so as to obtain a suitable morphology for the top and bottom electrical contacts. Electrical and optical characterizations of the integrated NWs have been performed. Contacts ohmicity has been demonstrated and specific contact resistances have been reported. The photoconducting properties of polymer-integrated ZnO NWs have also been investigated in the UV-visible range through collective electrical contacts. A small increase of the resistivity in the ZnO NWs under sub-bandgap illumination has been observed and discussed. A comparison of the photoluminescence (PL) spectra at 300?K of the as-grown and SOG-integrated ZnO nanowires has shown no significant impact of the integration process on the crystal quality of the NWs.     

Photoinduced phenomena in nanostructured porous silicon

In this work we study the evolution of porous silicon photoluminescence under illumination. Samples were obtained by electrochemical etching of crystalline silicon wafers of different types. For the p-type samples the evolution of the spectra is explained in terms of photoinduced oxidation of nanostructures, which in turns leads to a discrete change in the photoluminescence spectra, as we reported in previous works. For the n-type material, a progressive decrease of the luminescence intensity is observed, which is attributed to the photoinduced generation of dangling bond related defect states at the surface layer surrounding the nanostructures. This model explains qualitatively well the kinetics of the evolution of the measured photoluminescence. Preliminary results of electronic paramagnetic resonance spectroscopy agree with this model.     

Annealing and photobleaching effects on the absorption spectra of gamma-irradiated BaFI crystals

We have studied processes induced in gamma-irradiated BaFI crystals by illumination and thermal annealing and identified defect centers responsible for the observed absorption bands. We assign the 205-nm absorption band to α(F⁻) centers, the 230-nm band to α(I⁻) centers, the 270-nm band to F_i ⁰ centers, the 370-nm band to I_i⁰ centers, the bands around 480 nm to F(F⁻) centers, and the 610-nm band to F(I⁻) centers. The proposed assignment accounts well for the radiation-induced processes identified in the crystals.     

Lattice mismatch and surface morphology studies of In x Ga1−x As epilayers grown on GaAs substrates

In _x Ga_1−x As (0·06≤x≤0·35) epilayers were grown on GaAs substrates by atmospheric pressure metal organic chemical vapour deposition technique. Surface morphology and lattice mismatch in the InGaAs/GaAs films of different compositions were studied. Cross-hatched patterns were observed on the surface of the epilayers for bulk alloy composition up tox≈0·25. Forx>0·3, a rough textured surface morphology was observed.     

Etching of n-GaN - Important step in device processing

Photo-assisted electrochemical (PEC) and photo-assisted electrodeless (ELPEC) etching of n-doped GaN layers grown on sapphire in a KOH based solution under illumination of Hg arc lamp is demonstrated. Smooth surfaces were obtained for a narrow range of etching conditions. It was found out that this window could be extended by using etching conditions which produced “whiskers”. For ELPEC etching final etched surfaces were much smoother with stirring but showed distinct bar objects. Such objects could be eliminated by chopped irradiation when also the etching rate decreased and smoothing of pyramidal and bar objects in the etched surfaces was observed. This effect is most probably caused by the electron-hole pair recombination suppressed at semiconductor dislocation locations.     

Photochemical wet etching of silicon by synchrotron white X-ray radiation

We have investigated photochemical wet etching of n-type silicon (100) using synchrotron white X-ray radiation. During electroless photochemical wet etching under high flux white X-ray beam, the surface is electropolished. However, when the photon is reduced, the silicon surface becomes porous instead. The pore formation is greatly enhanced when an external potential is applied through a Pt counter electrode. The porous silicon layer exhibits strong photoluminescence signal.     

Microstructural characterisation of metallurgical grade porous silicon nanosponge particles

Porous silicon finds numerous applications in the areas of bio-technology, drug delivery, energetic materials and catalysis. Recent studies by Vesta Sciences have led to the development of porous silicon nanosponge particles from metallurgical grade silicon powder through their own patented chemical etching process (Irish patent no. IE20060360). This discovery paves the way for a more economical production method for porous silicon. The study presented here studies the structural morphology of the porous silicon nanosponge particles using high resolution electron microscopy techniques combined with porisometry type measurements, where appropriate. The related surface pore structure is examined in detail using Scanning Electron Microscopy and Transmission Electron Microscopy techniques while the internal pore structure is explored using Focused Ion Beam milling and ultramicrotomed cross-sections. Three samples of the silicon particles were analysed for this study which include the starting metallurgical grade silicon powder and two samples that have been chemically etched. Analysis of the etched samples indicates a disordered pore structure with pore diameters ranging up to 15 nm on porous silicon particles ranging up to 5 μm in size. Crystallographic orientation did not appear to affect the surface pore opening diameter. Internal pore data indicated pore depths of up to 1 μm dependant on the particle size and etching conditions applied.     

Current-voltage characteristics of Ag, Al, Ni-(n)CdTe junctions

Schottky barriers of Ag, Al, Ni-(n)CdTe structures have been prepared and studied. The films were prepared by rf sputtering and doped with Cd metal. Diode ideality factor of these junctions are greater than unity and barrier height varies from 0.6–0.7 eV and are affected by room illumination. Photovoltaic effect of these junctions was very poor and fill factor below 0.4. Low doping concentration, high defect density, presence of an interfacial layer and presence of high series resistance are perceived to affect theJ—V characteristic.     

Preparation of thin GaAs suspended membranes for gas micro-sensors using plasma etching

The GaAs/AlGaAs heterostructure layer system grown by MBE on GaAs substrate was designed to be used for micro-mechanical structure fabrication. In the first step, double-side aligned photolithography is carried out to define the etching masks on both sides of the substrate. After this, highly selective reactive ion etching (SRIE) of GaAs from the front side is used to determine the lateral dimensions of the membrane structure. The vertical dimension is defined by deep backside SRIE through a 300 μm thick GaAs substrate to the AlGaAs etch stop layer, hence the structure thickness is precisely determined by the thickness of MBE-grown GaAs layer over this etch stop layer. The last step is selective etching of the AlGaAs etch stop layer. The thermal resistance value of the membrane structure as high as 21 K/mW is achieved.     

Influence of buffer surface preparation on the quality of Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript>As/GaAs quantum wells studied by optical orientation experiments

Quantum well (QW) structures of Al _x Ga_1-x As/GaAs with x = 0.3 were characterized by photoluminescence spectroscopy (PL) with circularly polarized excitation at a temperature of 1.6 K. The samples contained three QWs with thickness of 7, 5, and 3 nm grown by molecular beam epitaxy (MBE) on a 500 nm thick buffer layer. Four samples with identical geometry but different surface treatments (in-situ etching the GaAs buffer with Cl₂ at different temperatures, and air-exposed buffer, respectively) were compared. The degree of circular polarization of the PL and its decrease in a magnetic field applied perpendicularly to the direction of propagation of light (Hanle effect) allows the determination of the interband lifetime τ and the spin lifetime τ _s of the electrons. These lifetimes were different in the different QWs and strongly depend on the growth procedure.