YSZ thin films deposited by e-beam technique

YSZ thin films were grown evaporating cubic and tetragonal phase ZrO₂ stabilized by 8 wt.% of Y₂O₃ (8% of YSZ) ceramic powders by using e-beam deposition technique. Operating technical parameters that influence thin film properties were studied. The influence of substrate crystalline structure on growth of deposited YSZ thin film was analyzed there. The YSZ thin films (1.5-2 μm of thickness) were deposited on three different types of substrates: Al₂O₃, optical quartz (SiO₂), and Alloy 600 (Fe-Ni-Cr). The dependence of substrate temperature, electron gun power, and phase of ceramic powder on thin film structure and surface morphology was investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The substrate temperature was changed in the range of 20-600° C (during the YSZ thin film deposition) and its influence on the crystallinity of deposited YSZ thin films was analyzed. It was found that electron gun power and substrate temperature has the influence on the crystallite size, and texture of YSZ thin films. Also, the substrate has no influence on the crystal orientation. The crystallite size varied between 20 and 40 nm and increased linearly changing the substrate temperature. The crystal phase of evaporated YSZ powder has the influence on the structure of the deposited YSZ thin films.     

Effects of substrate temperature on Bi0.8La0.2FeO3 thin films prepared by pulsed laser deposition

Bi_0.8La_0.2FeO₃ thin films on Pt/TiO₂/SiO₂/Si substrates at various substrate temperatures from 500 °C to 750 °C are prepared by pulsed laser deposition, and their microstructures and ferroelectric/magnetic properties are carefully investigated using various techniques. It is observed that the crystallographic orientation and Fe-ion valence state depend significantly on the substrate temperature, which consequently influences considerably on the ferroelectric and magnetic properties of the thin films. A considerable improvement of the ferroelectric and magnetic properties of the thin films can be achieved by optimizing the substrate temperature for deposition.     

Preparation of LiMn2O4 thin films by aqueous solution deposition

Cathode material LiMn₂O₄ thin films were prepared by aqueous solution deposition using lithium acetate and manganese acetate as starting materials. The structures, morphologies, and the first discharge specific capacity of the thin films were investigated as a function of annealing temperature and time. The cycling properties of the thin films were also examined. The results show that LiMn₂O₄ thin films prepared by this method are homogenous and crack-free. The thin film annealed at 750°C for 30 min has good rechargeability. The capacity loss per cycle is about 0.05% after being cycled 100 times.     

Influences of KMnO4 on the syntheses and properties of CaWO4 thin films prepared by galvanic cell methods

CaWO₄ thin films are important functional materials. Electrochemical methods are widely used to fabricate such films. However, films' quality and properties need to be improved. To optimize their preparation, comparative experiments on their deposition were conducted. Investigation of the current densities revealed that the modification of catholytes with KMnO₄ significantly enhanced the deposition rate, especially when their pH was 2; however, this oxidant should not be added to the anolytes because it greatly decreased both the deposition rate and the film's luminescence. A study of the mechanism revealed that the rate of electrodeposition of CaWO₄ films is dominated by the diffusion of WO₄²⁻ ions when the KMnO₄ concentration is 0.01 M. However, without KMnO₄, it is controlled by the reduction of water; when the concentration is less than 0.01 M, it is controlled by both the anodic and cathodic reaction. Characterization revealed that the crystallization, surface quality and luminescence properties of the samples deposited with the use of KMnO₄ are much better than those of samples prepared by the hydrothermal galvanic cell or the constant current method. In our opinion, the presence of far fewer impurities and defects as a result of rapid growth may be the most important factor accounting for this improvement.     

Improved electrochromical properties of sol-gel WO3 thin films by doping gold nanocrystals

In this investigation, the effect of gold nanocrystals on the electrochromical properties of sol-gel Au doped WO₃ thin films has been studied. The Au-WO₃ thin films were dip-coated on both glass and indium tin oxide coated conducting glass substrates with various gold concentrations of 0, 3.2 and 6.4 mol%. Optical properties of the samples were studied by UV-visible spectrophotometry in a range of 300-1100 nm. The optical density spectra of the films showed the formation of gold nanoparticles in the films. The optical bandgap energy of Au-WO₃ films decreased with increasing the Au concentration. Crystalline structure of the doped films was investigated by X-ray diffractometry, which indicated formation of gold nanocrystals in amorphous WO₃ thin films. X-ray photoelectron spectroscopy (XPS) was used to study the surface chemical composition of the samples. XPS analysis indicated the presence of gold in metallic state and the formation of stoichiometric WO₃. The electrochromic properties of the Au-WO₃ samples were also characterized using lithium-based electrolyte. It was found that doping of Au nanocrystals in WO₃ thin films improved the coloration time of the layer. In addition, it was shown that variation of Au concentration led to color change in the colored state of the Au-WO₃ thin films.     

Effects of doping concentration on the microstructural and optoelectrical properties of boron doped amorphous and nanocrystalline silicon films

Boron doped hydrogenated amorphous silicon thin films were prepared by plasma-enhanced chemical vapor deposition technique at various flow rate of diborane (F_B). As-deposited samples were thermally annealed at the temperature of 800 °C to obtain the doped nanocrystalline silicon (nc-Si) films. The effect of boron concentration on the microstructural, optical and electrical properties of the films was investigated. X-ray photoelectron spectroscopy (XPS) measurements demonstrated the presence of the substitutional boron in the doped films. It was found that thermal annealing can efficiently activate the dopants in films accompanying with formation of nc-Si grains. Based on the temperature-dependent conductivity measurements, it was shown that the dark conductivity of doped amorphous samples increases monotonously with the increase of doping content. While the dark conductivity of doped nc-Si films is not only determined by the concentration of dopant but also the crystallinity of the films. As increasing the flow rate of diborane, the crystallinity of doped nc-Si films decreases, which causes the decrease of dark conductivity. Finally, the high dark conductivity of 178.68 S cm⁻¹ of the B-doped nc-Si thin films can be obtained.     

Growth morphology study of cathodically electrodeposited Fe3O4 thin films at elevated temperatures

We investigated the electrodeposition of Fe₃O₄ thin films in the Fe³⁺-triethanolamine system by galvanostatic deposition at elevated temperatures. It was found that with a fixed current density, the concentration of Fe³⁺ ions had a significant impact on the electrodeposition rate, while the deposition temperature and time strongly affected the morphology of the Fe₃O₄ thin films. Fe₃O₄ thin films deposited in electrolyte with high Fe³⁺ concentration and at high temperature (>80 °C) exhibited a dense and uniform morphology and were composed of globular or polyhedral crystallites, while the Fe₃O₄ thin films deposited at low temperatures (<70 °C) were loose and flake-like. Based on the empirical observations, a hypothetical growth model for the electrodeposition of Fe₃O₄ at elevated temperatures was proposed.     

Influence of Deposition Pressure (O2) on the YBCO (Y123) Thin Films Prepared by Pulsed Laser Deposition

In this paper, the influence of oxygen pressure on film quality and superconducting properties of YBa₂Cu₃O_7?δ (YBCO-Y123) thin films prepared by Pulsed Laser Deposition (PLD) was investigated. For this purpose, YBCO thin films were deposited on polished LaAlO₃ (l00) (LAO) substrates at three different oxygen pressures (150, 200, and 250 mTorr). X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) techniques were used to make comparative studies of film microstructure. Except for oxygen pressures, all other variables such as number of pulses, repetition rate, deposition temperature, heating and cooling rate, target-substrate distance, laser excitation energy, annealing temperature, and annealing pressure were fixed. For this fixed set of parameters, SEM, XRD analysis, and AC susceptibility measurements of these films revealed that the crystal structure quality and superconducting properties of YBCO thin films are optimum at the oxygen deposition pressure of 150 mTorr. As the deposition pressure increased, Y₂BaCuO₅ (Y211) phase peaks were seen in XRD patterns. The reason for this was believed to be caused by decreased concentration of CuO and BaO as determined by Energy Dispersive X-Ray Spectroscopy (EDX) of thin films.     

Photochemical conversion of 2,5-diiodothiophene condensed on substrates to oligothiophene and polythiophene thin films and micro-patterns

A simple and efficient photochemical process for in-situ fabrication of oligothiophene and polythiophene thin films and patterns is demonstrated. The process involves vapor deposition of monomeric precursor molecules, 2,5-diiodothiophene on a substrate followed by photodissociation of the C-I bond to produce monomer radicals that further react in the condensed phase to produce oligothiophene and polythiophene. The thienyl molecular structure of the precursor is preserved during the photochemical process, providing good π conjugation of the produced polymer. Alkyl and cross-linking defects are negligible in the produced film. The direct conversion of the adsorbed monomer to the conjugated polymer allows easy fabrication of thin films and micro-patterns of polythiophene.     

Heating of polymer substrate by discharge plasma in radiofrequency magnetron sputtering deposition

The substrate used for the thin film deposition in a radiofrequency magnetron sputtering deposition system is heated by the deposition plasma. This may change drastically the surface properties of the polymer substrates. Deposition of titanium dioxide thin films on polymethyl methacrylate and polycarbonate substrates resulted in buckling of the substrate surfaces. This effect was evaluated by analysis of atomic force microscopy topography images of the deposited films. The amount of energy received by the substrate surface during the film deposition was determined by a thermal probe. Then, the results of the thermal probe measurements were used to compute the surface temperature of the polymer substrate. The computation revealed that the substrate surface temperature depends on the substrate thickness, discharge power and substrate holder temperature. For the case of the TiO₂ film depositions in the radiofrequency magnetron plasma, the computation indicated substrate surface temperature values under the polymer melting temperature. Therefore, the buckling of polymer substrate surface in the deposition plasma may not be regarded as a temperature driven surface instability, but more as an effect of argon ion bombardment.     

Effect of deposition conditions on the characteristics of ZnO-SnO2 thin films deposited by filtered vacuum arc

ZnO-SnO₂ thin films were deposited on microscope glass substrates by filtered vacuum arc deposition system. The effects of deposition conditions on film characteristics were studied using cathodes prepared with three different ratios of atomic concentrations of Zn to Sn. The micro and the macro properties of the films were investigated as a function of cathode composition, arc current, background oxygen deposition pressure, and deposition time. X-ray diffraction analysis indicated that deposited films were amorphous, independent of the cathode composition. The atomic concentration ratio of Zn to Sn in the film as determined by XPS analysis were 33.9%: 10.6%, 43.9%: 3.8%, 44.7%: 4.7% for 50%: 50%, 70%: 30% and 90%: 10% Zn-Sn alloy cathodes, respectively. Film transmission in the visible was 70 to 90%, affected by interference effects. The maximal and minimal values of the refractive index n and the absorption coefficient k in the visible were 2.11 to 1.94 and 0.07 to 0.001, respectively. The optical band gap was in the range of 3.13 to 3.59 eV. All films were highly resistive independent of deposition conditions used.     

Effects of High Magnetic Field on the Structure and Magnetic Properties of Molecular Beam Vapor Deposited Fe₆₀Ni₄₀ Thin Films

The Fe₆₀Ni₄₀ (in atomic %) polycrystalline thin films with 90 nm thickness were prepared on 200 °C quartz substrate by using molecular beam vapor deposition method. The influence of 0 T and 6 T magnetic fields on the structural evolution and magnetic properties of thin films was studied by using EDXS, XRD, AFM and VSM. In this study, only α phase was formed in both thin films. It was found that the application of a 6 T magnetic field obviously decreases the RMS of surface roughness and the grain size. For the magnetic properties of the thin films, the 6 T magnetic field increases the saturation magnetism Ms in-plane and the squareness (Mr/Ms) of the hysteresis loop and decreases the coercive force Hc. This indicates the soft magnetic properties of the thin films have been notably enhanced in-plane by a high magnetic field. The relationship between the structural evolution and magnetic properties was discussed in details.     

Growth of cubic and hexagonal CdTe thin films by pulsed laser deposition

The paper reports the growth of cadmium telluride (CdTe) thin films by pulsed laser deposition (PLD) using excimer laser (KrF, λ=248 nm, 10 Hz) on corning 7059 glass and SnO₂-coated glass (SnO₂/glass) substrates at different substrate temperatures (T_s) and at different laser energy pulses. Single crystal target CdTe was used for deposition of thin films. With 30 min deposition time, 1.8- to ∼3-μm-thick films were obtained up to 200 °C substrate temperature. However, the film re-evaporates from the substrate surface at temperatures >275 °C. Atomic force microscopy (AFM) shows an average grain size ∼0.3 μm. X-ray diffraction analysis confirms the formation of CdTe cubic phase at all pulse energies except at 200 mJ. At 200 mJ laser energy, the films show hexagonal phase. Optical properties of CdTe were also investigated and the band gap of CdTe films were found as 1.54 eV for hexagonal phase and ∼1.6 eV for cubic phase.     

Enhanced Flux Pinning Properties of BaZrO3-doped YBCO Films Grown by Pulsed Laser Deposition on LaAlO3(100) Substrates Decorated with Y2O3 Nanoislands

In this work, we intend to investigate the interaction between two types of nanoscaled artificial pinning centers and their pinning properties in YBCO thin films grown by pulsed laser deposition technique. The two types of artificial pinning centers were prepared in different processes, (1) Y₂O₃ nanoislands decorated on substrates prior to the deposition of YBCO thin film, and (2) BaZrO₃ nanoparticles self-assembled within YBCO matrix during the deposition of YBCO thin film. We compared the transport characteristics of the YBCO thin films containing these two types of artificial pinning centers with those of pure YBCO thin films grown on decorated substrates and BZO-doped YBCO thin films grown on undecorated substrates. It was found that these two types of artificial pinning centers, which are simultaneously present, acted constructively to enhance the pinning properties of YBCO thin films.     

Laser molecular beam epitaxy growth and properties of SrTiO3 thin films for microelectronic applications

Dielectric SrTiO₃ thin films were deposited on LaAlO₃ and Si substrates using laser molecular beam epitaxy. The correlations between the deposition parameters of SrTiO₃ thin films, their structural characteristics, and dielectric properties were studied. The conditions for achieving epitaxial SrTiO₃ thin films were found to be limited to deposition conditions such as deposition temperature. We show that the SrTiO₃ films with single (110) orientation can be grown directly on Si substrates. The nature of epitaxial growth and interfacial structures of the grown films were examined by various techniques, such as Laue diffraction and X-ray photoelectron spectroscopy. The SrTiO₃/Si interface was found to be epitaxially crystallized without any SiO₂ layer. Furthermore, we have measured dielectric properties of the grown SrTiO₃ multilayer suitable for tunable microwave device. A large tunability of 74.7%, comparable to that of SrTiO₃ single-crystal, was observed at cryogenic temperatures. Such STO thin films will be very promising for the development of microelectronic device applications.     

Effects of Ni doping on photocatalytic activity of TiO<Subscript>2</Subscript> thin films prepared by liquid phase deposition technique

The TiO₂ thin films doped by Ni uniformly and non-uniformly were prepared on glass substrate from an aqueous solution of ammonium hexa-fluoro titanate and NiF₂ by liquid phase deposition technique. The addition of boric acid as an F ⁻ scavenger will shift the equilibrium to one side and thereby deposition of the film is progressed. The rate of the reaction and the nature of deposition depend on growing time and temperature. The resultant films were characterized by XRD, EDAX, UV and SEM. The result shows that the deposited films have amorphous background, which becomes crystalline at 500°C. The EDAX data confirms the existence of Ni atoms in TiO₂ matrix. XRD analysis reveals the peaks corresponding to Ni but no peak of crystalline NiO was found. The transmittance spectra of Ni uniformly and non-uniformly doped TiO₂ thin films show ‘blue shift and red shift’, respectively. Ni-doped TiO₂ thin films can be used as photocatalyst for the photodegradation of methyl orange dye. It was found that, organic dye undergoes degradation efficiently in presence of non-uniformly Ni-doped TiO₂ thin films when compared to uniformly doped films and pure TiO₂ films under visible light. The photocatalytic activity increases with increase in the concentration of Ni in case of nonuniformly doped thin films but decreases with the concentration when uniformly doped thin films were used.     

Ru thin film grown on TaN by plasma enhanced atomic layer deposition

Ru thin films were sequentially deposited onto TaN (5 nm) by plasma enhanced atomic layer deposition using Ru(EtCp)₂ and NH₃ as precursors. The effect of growth temperature on the electrical resistivity and morphology of the Ru films were studied. It was found that the Ru films can achieve a low resistivity of 14 µΩ cm and a low root-mean-square roughness at a growth temperature of 270 °C. The thickness of the underlying TaN film was found to affect the Ru film growth. The oxidation of the very thin TaN film was correlated with the island growth of Ru. Ex and in-situ X-ray diffraction was employed to verify the copper diffusion barrier properties of a Ru (3 nm)/TaN (5 nm) bi-layer structure.     

Chemical bath deposition of MoS2 thin film using ammonium tetrathiomolybdate as a single source for molybdenum and sulphur

Molybdenum disulphide, MoS₂, thin films have been deposited by chemical bath deposition method on glass and quartz substrate using ammonium tetrathiomolybdate as a single source precursor for Mo and S and subjected to vacuum heat treatment at different temperatures. X-ray diffraction of as-deposited film indicated its amorphous character and showed the development of poorly crystalline MoS₂ thin film on increasing annealing temperature. The film has been characterized by energy dispersive X-ray analysis, X-ray photoelectron spectroscopy, scanning electron micrograph and the optical properties also have been studied.     

Preparation, characterization and photocatalytic activity of in situ Fe-doped TiO2 thin films

Fe-doped TiO₂ thin films were prepared in situ on stainless steel substrates by liquid phase deposition, followed by calcination at various temperatures. It was found that some Fe³⁺ ions were in situ doped into the TiO₂ thin films. At 400 °C, the film became photoactive due to the formation of anatase phase. At 500 °C, the film showed the highest photocatalytic activity due to an optimal Fe³⁺ ion concentration in the film. At 900 °C, the photocatalytic activity of the films decreased significantly due to the further increase of Fe³⁺ ion concentration, the formation of rutile phase and the sintering and growth of TiO₂ crystallites.     

La-substitution Bi2Ti2O7 thin films grown by chemical solution deposition

(La_0.05Bi_0.95)₂Ti₂O₇ (LBTO) thin films had been successfully prepared on P-type Si substrate by chemical solution deposition method. The structural properties of the films were studied by X-ray diffraction. The phase of (La_0.05Bi_0.95)₂Ti₂O₇ is more stable than the phase of Bi₂Ti₂O₇ without La substitution. The films exhibited good insulating properties with room temperature resistivities in the range of 10¹²-10¹³ Ω cm. The dielectric constant of the film annealed at 550 °C at 100 kHz was 157 and the dissipation factor was 0.076. The LBTO thin films can be used as storage capacitors in DRAM.