锌铝合金粉中Al含量对无铬达克罗涂层耐蚀性的影响

为获得表面形貌良好、耐蚀性能优异的无铬锌铝合金涂层,采用4种不同Al含量的片状Al-Zn合金粉替代传统达克罗涂层所用的锌铝混合粉制备涂层,将涂层浸入NaCl溶液中进行加速浸泡腐蚀.采用扫描电镜、能谱仪、X射线衍射仪分析涂层腐蚀形貌、成分及物相,研究了Al含量对合金粉末涂层性能的影响.结果表明,当合金粉中Al的质量分数低于55％时,涂层的防护寿命随着Al含量的增大而增加,采用Al含量为55％的片状合金粉制备的无铬达克罗涂层的耐蚀性最好.     

Ti_2AlNb合金表面渗镀Al层的抗热腐蚀性能

目前,鲜见对Ti_2AlNb合金表面渗镀Al层在高温熔盐环境中耐腐蚀性能的报道。采用加弧辉光等离子渗镀技术在Ti_2AlNb合金表面渗镀Al层。采用扫描电镜、X射线衍射仪分析了渗镀Al层的形貌、结构及相组成;采用涂盐热腐蚀试验研究了渗镀Al层在750℃的Na_2SO_4熔盐中的热腐蚀行为。结果表明:渗镀Al层由外层纯Al沉积层和内层Al-Ti-Nb扩散层组成,其组织均匀致密,与基体结合良好;在750℃的Na_2SO_4熔盐中,Ti_2AlNb合金基体腐蚀增重显著,腐蚀产物出现明显的层状剥落现象,耐热腐蚀性较差,而渗镀Al层试样仅发生微小的增重,腐蚀100 h后,内部扩散层还比较完整,未出现氧化和硫化的现象,仍拥有足够的Al源来抵抗接下来的腐蚀进程。     

不同B含量的Pb-Mg-Al-B合金在Cl~-中的腐蚀行为

采用模拟海水浸泡实验、析氢腐蚀、中性盐雾腐蚀试验、电化学法测试,并采用静态腐蚀失重法测定计算合金腐蚀速率,研究了具有核屏蔽性能的Pb-Mg-Al-B合金在3.5wt.%NaCl溶液中的腐蚀行为,并利用SEM、XRD以及XPS对腐蚀前后合金的表面形貌和腐蚀产物进行分析。结果表明:B含量为1.5%时合金的耐腐蚀性能最好;第二相Mg17Al12以网状形态分布于晶界时对合金腐蚀有明显的阻碍作用;XRD表明腐蚀产物主要为Mg2Pb、PbO、Pb、以及Al2O3、Mg17Al12和含B相AlB2,几乎没有Mg的衍射峰;造成耐蚀性差异的主要原因在于不同元素金属含量对合金微观组织结构的影响。     

溅射CoCrAlY涂层对Ni3Al金属间化合物热腐蚀抗力的影响

采用电化学方法并结合物相分析技术研究了溅射CoCrAlY涂层对Ni_3Al金属间化合物热腐蚀抗力的影响。结果表明,Ni_3Al金属间化合物的耐蚀性能极差,合金表面没有形成Al_2O_3保护膜。CoCrAlY涂层表面形成了富铝氧化膜,明显改善了Ni_3Al金属间化合物的耐蚀性能。     

单晶高温合金钴铝涂层的高温腐蚀行为研究

采用化学气相沉积(CVD)方法在单晶高温合金基体上制备了钴铝(Co-Al)涂层,研究了900℃下涂层的高温热腐蚀行为。采用X-射线衍射(XRD)、扫描电子显微镜(SEM)、能谱仪(EDS)等方法分析了Co-Al涂层在高温热腐蚀过程中相结构、显微组织和化学成分的演变规律,结果表明:从腐蚀动力学曲线来看,表面涂覆Co-Al涂层的单晶合金的抗高温热腐蚀性能优于无涂层的合金基体;Co层可有效阻挡基体中的Cr元素向外扩散,使涂层表面形成一层连续纯净的Al2O3层,提高了涂层对合金材料的高温热腐蚀抗力;由于Al元素向外扩散,发生Co Al→α-Co相变,直至全部转变成α-Co相,涂层抗热腐蚀退化行为结束。     

电弧喷涂锌铝伪合金涂层的耐中性盐雾腐蚀性能

Al含量超过15％的锌铝合金涂层脆性大,限制了其在钢铁防护中的应用。采用电弧喷涂技术在Q235钢表面制备出了纯锌涂层和含铝20％（质量分数）的锌铝伪合金涂层,通过中性盐雾试验及电化学极化测试研究了2种涂层在中性盐雾环境中的耐蚀性,并结合扫描电镜（SEbl）和x射线衍射仪（XRD）对涂层表面形貌及腐蚀产物的相结构进行了观测分析。结果表明：2种涂层均匀致密,孔隙率小,与基体结合良好;随盐雾试验时间增长,锌铝伪合金涂层表面形成了致密的腐蚀产物层,其屏蔽作用有效阻碍了腐蚀介质的渗入,使Q235钢的腐蚀速率快速降低。锌铝伪合金涂层的自腐蚀电流密度小于纯锌涂层,表现出更为优越的防腐蚀性能。     

液态GaIn合金对铜的腐蚀机理与防腐蚀技术研究

为了提高Cu耐GaIn合金腐蚀的性能,采用多弧离子镀在纯Cu表面溅射Cr涂层和Al涂层.再利用原位反应和溶胶凝胶法制备出Cr/Cr2 O3/Al2 O3复合涂层、Cr/CrN/SiO2复合涂层以及Al/Al2 O3/Al2 O3复合涂层,将样品置于60℃和200℃的GaIn合金中进行腐蚀试验.GaIn合金会对Cu样表面造成严重的点状腐蚀,但在腐蚀过程中铜镓金属间化合物会附着在铜样表面,从而降低GaIn合金对铜块的腐蚀速率.GaIn合金会对Al/Al2 O3/Al2 O3涂层造成严重的腐蚀,使涂层大面积剥落.Cr/CrN/SiO2涂层在GaIn合金中较为稳定,腐蚀程度低,但最外层的SiO2出现开裂和剥落.Cr/Cr2 O3/Al2 O3涂层在GaIn合金中无明显腐蚀现象.随着腐蚀温度的升高,GaIn合金对样品的腐蚀速率也会有所提高.Cu在200℃时的腐蚀速率是在60℃时的269倍以上,黏附在Cu表面的腐蚀产物主要为CuGa2.Cr/Cr2 O3/Al2 O3涂层抗GaIn合金腐蚀性能最好,Cr/Cr2 O3/Al2 O3涂层在200℃的GaIn合金中腐蚀速率为0.0495μm/h,且对Cu的热导率影响在1％左右.     

Al对Ni-10%Fe合金在相变储热介质Na Cl-MgCl2中腐蚀行为的影响

针对熔融共晶NaCl-MgCl2作为太阳能中高温相变储热传热介质对金属材料腐蚀问题,采用静态浸盐腐蚀试验方法,研究了Al含量(质量分数)分别为0,3%,5%,7%,10%的5种Ni-10%Fe-x Al合金在520℃熔融NaCl-53.63%(质量分数) MgCl2中的腐蚀行为。采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)等设备,分析了腐蚀后试样表面形貌及物相特征,探讨了腐蚀机制。结果表明:腐蚀20 h后,含Al试样表面均疏松多孔,形成富Ni而贫Fe的骨架状组织,且Al含量越高,试样表面变得越疏松; Al含量较低时(质量分数3%,5%,7%),试样表面形成了Mg和Al的氧化壳,但因氧分压较低,氧化壳不完整,仅在一定程度上可以抑制熔融盐和O2向金属/氧化膜界面扩散,起到保护作用; Al含量较高时(质量分数10%),试样表面组织非常疏松,保护壳层会因失去支撑而破碎和脱落,腐蚀加剧。     

高硅SiCp/Al复合材料的表面敏化

高硅SiCp/Al复合材料化学镀镍是其表面金属化的关键步骤,化学镀前的敏化工艺易造成该复合材料表面Al合金的过度腐蚀,形成腐蚀孔洞缺陷,金属化后的试样表面粗糙度增加,并对后续的钎焊工艺产生不利影响。本文采用SnCl2+HCl溶液对高硅SiCp/Al复合材料进行敏化处理,研究了敏化时间和敏化液浓度对试样表面质量的影响。结果表明,敏化0.5min后试样表面Al合金腐蚀程度小,沉积的Sn(OH)2颗粒数量少。敏化1.5min以上,试样表面Sn(OH)2颗粒数量多,但Al合金完全腐蚀,留下大而深的腐蚀孔洞;降低敏化液浓度也不能明显提高敏化试样的表面质量。敏化1.0min后,试样表面Al合金连续分布,无大而深的腐蚀孔洞,Sn(OH)2颗粒数量适中。经过1min敏化的高硅SiCp/Al复合材料试样表面化学镀层质量良好。     

Mn对Mg-5Al镁合金腐蚀性能的影响

研究了不同含量的Mn对Mg-5Al镁合金的显微组织以及在NaCl溶液腐蚀介质中腐蚀性能的影响。结果表明,添加Mn后,Mn优先与Al结合形成Al8Mn5相,合金晶粒明显细化,连续或半连续网状分布β-Mg17Al12相逐渐呈断续及颗粒状弥散分布且数量减少。随着Mn含量的增加,合金腐蚀速率降低,腐蚀电流密度降低,而钝化膜电阻和电荷转移电阻增加,合金耐蚀性能得到明显的改善。当Mn含量为0.5%(质量分数)时,合金耐蚀性最好,腐蚀速率仅有1.08mg.cm-2.d-1,比未添加Mn的合金降低了72%。     

Efficient wet etching of GaN (0001) substrate with subsurface damage layer

Photoenhanced chemical (PEC) etching is applicable for processing an n-GaN (0001) surface rapidly. In this process, the surface oxidation is enhanced by photo-generated holes and the resulting oxide can dissolve into solutions. In current work, we conduct bias-assisted PEC etching in a KOH solution with a positively biased wafer, to remove the crystallographically highly damaged layer. The employed substrate was mechanically polished with diamond slurry of sub-micrometer particle size. Without the positive bias, the rate of PEC etching was quite low because the photogenerated holes were quickly depleted by the recombination process at the crystallographic defects and they could not contribute to the oxidation. On the other hand, in the case where the bias was applied, the photogenerated holes and electrons are separated forcibly in the band-bended surface, which effectively contributed to surface oxidation. As a result, a high removal rate was realized even on the damaged surface.     

Characterisation of surface preparation of 2024 aluminium alloy for conversion coating

Abstract

X-ray photoelectron spectroscopy (XPS), scanning electron microscopy, and electrochemical potentiodynamic experiments have been used to study the pretreatment of 2024–T3 aluminium alloy before conversion coating. The pretreatment process included vapour degreasing, alkaline cleaning and Cr based acidic deoxidising steps. This type of pretreatment is appropriate for conversion coatings which meet aerospace standards for corrosion resistance and paint adhesion. During alkaline cleaning an oxide containing Mg, Zn, Si, and Fe developed on the surface of the alloy. During deoxidation there was dissolution and etching of both the intermetallics and the basic oxide scale left after the alkaline cleaning. Characterisation by XPS indicated that the surface was coated with a thin Cr containing coating after deoxidation which provided a degree of passivation to the surface as determined by electrochemical measurements.

MST/3372     

Plasmachemische Gasphasenabscheidung und Plasmaätzen bei Atmosphärendruck

Plasma enhanced Chemical Vapour Deposition and plasma etching at atmospheric pressure Plasma processes are applied for a variety of surface modifications. Examples are, e.g. coatings to achieve an improved corrosion and scratch protection, or surface cleaning and texturising. Since these processes, however, usually take place in vacuum, they are unfortunately not applicable for large area industrial use. Plasma enhanced CVD processes at atmospheric pressure enable the deposition of functional coatings on components and semi‐finished parts with in a continuous air‐to‐air process without the use of expensive vacuum systems. By their integration into in‐line production processes the substrate handling and the coating costs are definitely reduced. A thermal plasma source, basing on a linearly extended DC arc discharge at atmospheric pressure, has been tested for the deposition of silicon nitride at substrate temperature of less than 300° in a continuous PECVD process. Furthermore this source has been tested for plasma‐chemical etching and texturising of silicon as well.     

Plasma-assisted removal of organic contaminants inside cavities

Parametric studies have been carried out to determine the cleaning efficiency of a low-pressure microwave discharge at 2.45 GHz in Ar and O₂. The prototypical problem of reduced cleaning efficiency inside deep bore holes is studied with modular 3D test substrates containing bore holes of different depths. The design of the substrates allows for a simplified access of surface diagnostic techniques to measure the mass removal depending on the aspect ratio of cavities.The cleaning effect is verified by the reduction of thin oil films or polypropylene samples situated at the bottom or sidewall of the substrate. Gravimetric and profilometric measurements are presented and the effect of process parameters (power, pressure, pulse duration, and gas mixture) on the removal rate of organic material from the surface is illuminated.Within the conditions under investigation pressures between 10 and 20 Pa lead to optimum results for an aspect ratio of 16.7 and absolute depths of 100 mm. While higher pressures lead to better cleaning at the surface, the removal diminishes greatly in deeper trenches, however, the cleaning efficiency in depth regions below 30 mm can be enhanced by choosing proper treatment parameters.The results suggest that the cleaning process under these conditions is dominated by chemical surface reactions and the transport of reactive species in the holes is strongly influenced by losses due to wall reactions.     

低活化铁素体/马氏体钢原奥氏体晶界显示技术探讨

基于原奥氏体晶界浸蚀机理,通过评价低活化铁素体/马氏体钢原奥氏体晶界的显示效果,对浸蚀剂的配方、缓蚀剂含量及浸蚀时间进行了研究。结果表明:该钢在氯化铁+硝酸水溶液中可以浸蚀出马氏体板条及板条界面处弥散分布着的形貌与尺寸不同的细小析出相,而原奥氏体晶界显示效果不佳;饱和苦味酸水溶液+缓蚀剂能浸蚀出清晰的晶界。缓蚀剂过少,浸蚀速率过高,控制难度较大,达不到抑制晶内组织显像的效果;缓蚀剂过多,易在金属表面吸附成膜,浸蚀速率过低,晶界和晶内组织的浸蚀显像同时受到抑制。在100mL饱和苦味酸水溶液+08.g缓蚀剂中微沸热浸蚀4min,该钢的晶界清晰可辨。对比能谱分析结果可知,最优浸蚀配方的金相图能更直观地辨识出晶界和晶粒大小,对制样要求较低,图片采集过程更加简单、高效。     

硬铝合金的侵蚀方法及技巧

针对硬铝合金样品组织显示困难及第二相侵蚀脱落等问题，提出了合理选择侵蚀剂、控制侵蚀过程出现的气泡逸出、注意侵蚀结束前的表面清洁和严格掌握侵蚀时间等方法。     

2A12铝合金基体超疏水表面制备及性能研究

铝合金在使用过程中极易引发基体腐蚀现象,如点蚀、晶间腐蚀等,为保障铝合金在腐蚀环境中的应用,可通过建立超疏水表面改变铝合金表面的润湿性,从而在一定程度上减少腐蚀液与铝合金表面的接触,进而改善耐蚀性。本文通过酸刻蚀和沸水刻蚀两种方法在铝合金表面构筑微纳米结构,并使用低表面能物质硬脂酸进行表面处理得到超疏水表面。采用扫描电子显微镜、接触角测试仪、原子力显微镜分别对铝合金表面形貌、疏水性和粗糙度进行测试,得到两种方法的最佳制备时间,而后通过极化曲线对两种方法制备的铝合金表面耐蚀性能进行对比,进而研究两种刻蚀方法对铝合金耐蚀性的影响。实验结果表明：酸刻蚀时间为15 s时,铝合金表面接触角达到峰值163.9°,呈现超疏水状态,相对于空白样品,表面粗糙度增加了24倍,电化学自腐蚀电位正向移动0.362 8 V;沸水刻蚀时间为1 min时,其表面接触角达到峰值109.6°,比空白样品疏水性强但未呈现超疏水状态,相对于空白样品,经沸水刻蚀的铝合金表面粗糙度增加了4.4倍,电化学自腐蚀电位正向移动0.074 8 V。两种方法处理得到的铝合金表面的耐蚀性与空白铝合金试样相比均有显著提高,而酸刻蚀法的缓蚀效...     

铝基超疏水表面的制备及其在包装方面的应用进展

在铝基体上构建具有特殊浸润性的超疏水表面,可以赋予其耐腐蚀、防覆冰、润滑减阻等功能,使其具有更大的应用价值和市场前景。制备铝基超疏水表面的方法主要有刻蚀法、阳极氧化法、沉积法、水热法等。化学刻蚀法、阳极氧化法和水热法等操作简单,应用范围广,但在制备过程中用到的强酸强碱等对环境和人体有害;激光刻蚀法等可以控制超疏水表面微观结构的形貌,但使用设备昂贵,难以大范围使用。为拓展超疏水表面的应用领域,开发简便方法制备多级微纳米粗糙结构、使用黏合层加固微观结构、构建自修复超疏水表面是未来的主要研究方向。     

Localized Electrochemical Deburring of Cross Hole Using Gelatinous Electrolyte

Burrs are formed in mechanical processes such as cutting and blanking, and can have a number of negative effects, such as reducing product life. Burr removal generally depends on manual treatment methods due to the various shapes and properties of burrs. Deburring is therefore considered a significant issue in terms of achieving efficient production and automation. Electrochemical machining (ECM) is commonly used in the deburring of internal cross holes because of its high efficiency and lack of surface residual stresses. However, in the electrochemical deburring process, stray corrosion may cause loss of machining precision and surface quality. We herein propose a localized electrochemical deburring process using a gelatinous electrolyte to solve the problem of stray corrosion. As the gelatinous electrolyte is in contact with the burr surface without macroscopic liquid flow, electrochemical corrosion is confined to the narrow bounds of the burr. Our results indicate that the proposed process can maintain the original machined precision and surface quality while preventing stray corrosion, which is not possible using traditional ECM.     

Prediction of etching results and etching stabilization by applying principal component regression to emission spectra during in-situ cleaning

A method to predict etching results by analyzing plasma emission spectra during in-situ cleaning was investigated, where the plasma emission spectra indicate the surface condition of etching reactor walls. Plasma-wall interaction was evaluated by using both principal component regression of plasma emission spectra and attenuated-total-reflection Fourier-transform infrared spectroscopy. We found that differences in the amount of silicon oxide deposition on the reactor wall affected radical composition in the plasma during in-situ cleaning and consequently affected the etching results. Etching result predictions using the plasma spectra corresponded very well to the etching result measurements, which are used to improve etching stability.