退火温度对ZnO/Mo/ZnO透明导电薄膜结构及光电性能的影响

采用电子束蒸发法成功制备了透明导电的ZnO/Mo/ZnO(ZMZ)复合薄膜,研究了不同的退火温度对其电学和光学性质的影响规律。利用X射线衍射仪、扫描电子显微镜、X射线能谱仪、紫外可见分光光度计和四探针测试仪等检测手段对样品的性能进行了分析。实验结果表明:随着退火温度的升高,薄膜的结晶程度提高,晶粒尺寸增大;薄膜的电阻率先降低后升高;薄膜的光学透过率先升高后降低。当退火温度为250℃时,ZnO/Mo/ZnO薄膜具有最佳的综合光电性能,在400nm~900nm波长范围内最高透过率为81.4%,平均透过率高于80%,最低电阻率为1.71×10-4Ω·cm,表面电阻为15.5Ω/sq。研究表明所制备的ZMZ复合透明导电薄膜可应用于太阳能电池、液晶显示器等领域。     

ZnO:Sn/Ag/ZnO:Sn复合薄膜电极的防氧化性能研究

随着分辨率的提高,传统金属电极在电阻率和抗氧化性能方面已经不适合作为需要高温热处理的场致发射显示器件中的薄膜电极。本文采用5.77%(原子比)Sn掺杂的ZnO:Sn作为Ag层的保护层,利用磁控溅射法制备ZnO:Sn/Ag/ZnO:Sn复合薄膜及其电极,并采用X射线衍射、光学显微镜、扫描电子显微镜和电性能测试系统研究复合薄膜及其电极在经过不同温度退火后的晶体结构、表面形貌和电学性能的变化。ZnO:Sn膜层致密,25 nm厚的ZnO:Sn足以保护Ag层在530℃的高温中不被明显氧化,电极电阻率低达2.0×10-8Ω.m左右。     

ZnO∶Sn/Ag/ZnO∶Sn复合薄膜电极的防氧化性能研究

随着分辨率的提高,传统金属电极在电阻率和抗氧化性能方面已经不适合作为需要高温热处理的场致发射显示器件中的薄膜电极.本文采用5.77%(原子比)Sn掺杂的ZnO∶Sn作为Ag层的保护层,利用磁控溅射法制备ZnO∶Sn/Ag/ZnO∶Sn复合薄膜及其电极,并采用X射线衍射、光学显微镜、扫描电子显微镜和电性能测试系统研究复合薄膜及其电极在经过不同温度退火后的晶体结构、表面形貌和电学性能的变化.ZnO∶Sn膜层致密,25 nm厚的ZnO∶Sn 足以保护Ag层在530℃的高温中不被明显氧化,电极电阻率低达2.0×10-8Ω·m左右.     

Al掺杂量对ZnO:Al薄膜微观结构和光电性能的影响

采用溶胶-凝胶法在玻璃基片上制备出不同Al掺杂量的ZnO:Al(ZAO)薄膜.系统研究了Al掺杂量对薄膜微结构和光电性能的影响.结果表明:溶胶-凝胶法制备的薄膜具有完好C轴择优取向,在可见光区的透射率均大于85%;随着Al掺杂量的增加,薄膜的平均颗粒尺寸减小,表面电阻率先降低后升高,薄膜的光学带隙宽变宽.在5%H2 95%N2气氛退火可显著降低薄膜电阻率,掺Al量为2%的薄膜具有最低电阻率5.5×10-3Ω·Cm.     

退火温度对溶胶-凝胶法制备的ZnO薄膜性质的影响

为了提高ZnO薄膜的光学性能,采用溶胶-凝胶(sol-gel)和简易浸渍提拉法在石英基片上制备ZnO薄膜,并在不同温度下进行退火处理。利用X射线衍射(XRD)、原子力显微镜(AFM)、光致发光(PL)及紫外可见分光光度计对薄膜的结构特征、表面形貌和光学性质进行表征和测试。结果表明:所制备的ZnO薄膜均为六方形纤锌矿结构,结晶程度随退火温度的升高逐渐提高,薄膜透光性能良好,当退火温度低于500℃时,ZnO薄膜在见光区的平均透过率在70%以上。     

Al掺杂ZnO薄膜的射频磁控溅射工艺与光电性能研究

用射频磁控溅射法制备Al掺杂ZnO(ZAO)薄膜,研究溅射与真空退火工艺对ZAO薄膜的显微结构及光电性能的影响.采用X射线衍射(XRD)对ZAO薄膜的显微结构进行了测试分析,用四探针测试仪、紫外-可见分光光度计对ZAO薄膜的光电性能进行了测试分析.结果表明:随溅射时间的增加,样品由非晶态向晶态转变,同时也出现(002)择优取向强弱的变化.退火提高了溅射时间较长的薄膜的结晶质量.溅射时间的增加使溅射态ZAO薄膜的光学带隙变窄,但退火处理则使光学禁带宽度增大.溅射时间的增加以及退火处理均使薄膜的透光率稍有下降,但所有ZAO薄膜的透光率均在90%.以上.薄膜的电阻率随溅射时间的增加先降低.后稍有回升.退火使薄膜的电阻率显著降低,当溅射时间为60min时退火后薄膜的电阻率达到最低值,为9.4 ×10-4Ω·cm,其方块电阻低至18.80Ωl/□.     

退火温度对ZnO:Al透明导电薄膜结构和性能的影响

采用溶胶-凝胶法(sol-gel)在普通载玻片上制备了ZnO∶Al薄膜,在200～600℃下退火.利用XRD、紫外-可见光-近红外分光光度计和电阻测试仪等分析方法研究了不同退火温度对薄膜结构和光电性能的影响.结果表明,退火温度在300℃以上,薄膜开始结晶,400℃以上,薄膜出现明显结晶,且沿(002)方向择优取向,随着退火温度升高,(002)峰的强度逐渐增强,晶粒尺寸逐渐增加;薄膜在可见光范围内的透过率均＞85%以上,退火温度高的薄膜在可见光范围内的透过率明显提高,光学带隙在3.32～3.54eV,且随着温度的升高而降低;薄膜的电阻率随退火温度的增高而有所降低,但是仍较高,在103俜cm量级.     

退火处理对ZnO薄膜压敏性能的影响

采用射频磁控溅射技术在Si(111)衬底上生长ZnO基陶瓷薄膜,分别在650℃,750℃,850℃和900℃下退火,研究了退火温度对ZnO基陶瓷薄膜压敏性能的影响。结果表明,随着退火温度的升高,薄膜的压敏电压逐渐增大,非线性系数先增大后减小,漏电流密度先减小后增大。850℃退火处理后的薄膜具有较为理想的综合电性能,其非线性系数为14.93,压敏电压为4.82 V,漏电流密度为0.36μA/mm~2。     

ZnO缓冲层退火温度对Ti02∶Eu/ZnO薄膜光致发光性能的影响

采用溶胶-凝胶法在普通载玻片上制备出以ZnO为缓冲层、稀土Eu3+掺杂的TiO2薄膜,研究了ZnO缓冲层退火温度对TiO2∶Eu薄膜的光致发光性能以及晶体结构的影响.结果表明,随着ZnO层退火温度的升高,薄膜的PL谱增强,在500℃退火时达到最强;XRD显示,TiO2∶Eu3+/ZnO薄膜中有很强的ZnO(002)衍射峰,但是TiO2的(101)衍射峰却很微弱,且ZnO在500℃退火时TiO2的(101)衍射峰最弱.     

退火处理对N掺杂Al:ZnO薄膜结构及性能的影响

采用射频磁控溅射方法,常温条件下以N2作为N掺杂源,在玻璃基底制备了N掺杂Al:ZnO薄膜。在真空氛围下对样品进行了不同温度的退火处理15 min。通过X射线衍射、霍尔效应测试、紫外-可见光谱和X射线光电子能谱(XPS)仪分析了退火对样品结构和光电性能的影响。结果表明真空400℃退火15 min时成功制备出性能优异的p型ZnO薄膜,其空穴载流子浓度为3.738×1020cm~(-3),电阻率为1.299×10~(-2)Ω·cm,样品可见光透射率达到了85%以上。XPS分析说明No受主缺陷的含量大于(N2)o施主缺陷导致薄膜实现了p型转变。     

Rapid thermal annealing of sputter-deposited ZnO/ZnO:N/ZnO multilayered structures

Rapid thermal annealing (RTA) of sputter-deposited ZnO/ZnO:N/ZnO multilayered structures formed by a combination of radio-frequency magnetron sputtering and a microwave plasma source was investigated for the fabrication of highly-crystallized ZnO:N films. The assistance of the microwave plasma source resulted in the enhancement of nitrogen incorporation into the ZnO films and the deterioration of film crystallization. On the other hand, crystallization of the ZnO:N layer was improved by RTA with no significant effusion and diffusion of N atoms using a ZnO/ZnO:N/ZnO multilayered structure. The role of the front and bottom ZnO layers during RTA of ZnO/ZnO:N/ZnO multilayered structures is demonstrated.     

Annealing effect of ZnO/Au/ZnO transparent conductive films

Au intermediate ZnO (ZAZ) thin films were prepared by radio frequency and direct current magnetron sputtering on glass substrates and then vacuum annealed. The thickness of each layer of the ZAZ films was set at 50 nm, 3 nm, and 47 nm, respectively. The structural, electrical, and optical properties of ZAZ films were investigated with respect to the variation of annealing temperature.As-deposited AZO films showed X-ray diffraction peaks corresponding to ZnO (002) and Au (111) planes and those peak intensities increased with post-deposition vacuum annealing. The optical and electrical properties of the films were strongly influenced by post-deposition annealing. Although the optical transmittance of the films deteriorated with an Au interlayer, as-deposited ZAZ films showed a low resistivity of 2.0 × 10⁻⁴ Ω cm, and the films annealed at 300 °C had a lower resistivity of 9.8 × 10⁻⁵ Ω cm. The work function of the films increased with annealing temperature, and the films annealed at 300 °C had a higher work function of 4.1 eV than the films annealed at 150 °C. The experimental results indicate that vacuum-annealed ZAZ films are attractive candidates for use as transparent electrodes in large area electronic applications such as solar cells and large area displays.     

Design of ZnO/Ag/ZnO multilayer transparent conductive films

We have studied the properties of ZnO/Ag/ZnO multilayers prepared on glass substrates by simultaneous RF magnetron sputtering of ZnO and dc magnetron sputtering of Ag. The electrical and optical performance of Ag and ZnO single layer films was also investigated. Different optimization procedures were used for good transparent conductive film. Several analytical tools such as spectrophotometer, scanning electron microscope (SEM), four-point probes were used to explore the causes of the changes in electrical and optical properties. Low sheet resistance of 3 Ω/sq. and transmittance over 90% at 580 nm was achieved. The results of optimization condition of both oxide layers and metallic Ag layers were illustrated.     

Improved interfacial wetability in Cu/ZnO and its role in ZnO/Cu/ZnO sandwiched transparent electrodes

Oxide/metal/oxide(OMO) and its derivatives are considered as the promising alternatives to achieve high performance transparent electrodes(TEs). The percolation thickness and conductivity of the metal layer are very crucial for the optoelectrical properties of any OMO TE. Here, we report a facile method to promote the initial growth of the metal layer by improving the interfacial wettability between O-M interface. By subsequently combined with high-quality zinc oxide(ZnO) films, ZnO/Cu/ZnO TEs that have not only low sheet resistance(19.3/sq) but also enhanced thermal stability can be obtained, with a performance of an average transmittance of 84.4% over the visible spectral range of 400–800 nm.     

Influence of Ag thickness of aluminum-doped ZnO/Ag/aluminum-doped ZnO thin films

Highly conducting aluminum-doped ZnO (30 nm)/Ag (5-15 nm)/aluminum-doped ZnO (30 nm) multilayer thin films were deposited on glass substrate by rf magnetron sputtering (for top/bottom aluminum-doped ZnO films) and e-beam evaporation (for Ag film). The transmittance is more than 70% for wavelengths above 400 nm with the Ag layer thickness of 10 nm. The resistivity is 3.71 × 10^− 4 Ω-cm, which can be decreased to 3.8 × 10^− 5 Ω-cm with the increase of the Ag layer thickness to 15 nm. The Haacke figure of merit has been calculated for the films with the best value being 8 × 10^− 3 Ω^− 1. It was shown that the multilayer thin films have potential for applications in optoelectronics.     

电化学沉积法制备ZnO及ZnO/酞菁锌杂化薄膜

采用电化学沉积法在ITO玻璃基体上成功地制备出各种形态且均匀的ZnO及ZnO/酞菁锌薄膜.利用SEM、XRD以及UV-Vis光谱仪等分析方法对不同工艺下制备的薄膜进行了研究,结果显示所制备的纯ZnO薄膜为具有特定晶形的多晶,晶粒尺寸约为0.5～2 μ m;而ZnO/酞菁锌杂化薄膜为非晶态,染料分子与ZnO分子间的相互作用既影响了ZnO的晶体生长又改变了染料的光谱特性,形成了ZnO/酞菁锌杂化薄膜.     

MOF衍生的多孔ZnO/C、Ag/ZnO/C复合材料光催化性能研究

以金属有机骨架(MOF-5)为前驱体, 通过高温热处理和湿化学法获得ZnO/C和Ag/ZnO/C两种光催化复合材料。采用X 射线衍射(XRD)、扫描电子显微镜(SEM)、X射线能谱(EDS)和紫外-可见分光漫反射(UV-Vis DRS)等方法对所得样品的晶体结构、形貌特征、组成及光谱特性进行了表征。结果显示, 高温热处理保留了MOF-5的原始结构。ZnO/C比表面积为390 m²/g, 载银后比表面积仍达232 m²/g, 负载的银颗粒尺寸约30 nm。光催化降解实验表明ZnO/C和Ag/ZnO/C复合材料对亚甲基蓝(MB)都具有很高的降解效率, 均优于商业TiO₂。Ag/ZnO/C的光催化性能更好, 且具有较好的重复利用和稳定性。因此, 适度的高温碳化和掺杂贵金属是获得优良光催化性能的根本原因。     

Optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures for photovoltaic applications

Although ZnO and ZnS are abundant, stable, and environmentally benign, their band gap energies (3.44, 3.72 eV, respectively) are too large for optimal photovoltaic efficiency. By using band-corrected pseudopotential density functional theory calculations, we study how the band gap, optical absorption, and carrier localization can be controlled by forming quantum-well-like and nanowire-based heterostructures of ZnO/ZnS and ZnO/ZnTe. In the case of ZnO/ZnS core/shell nanowires, which can be synthesized using existing methods, we obtain a band gap of 2.07 eV, which corresponds to a Shockley-Quiesser efficiency limit of 23%. On the basis of these nanowire results, we propose that ZnO/ZnS core/shell nanowires can be used as photovoltaic devices with organic polymer semiconductors as p-channel contacts.     

感应耦合辅助磁控溅射氧化锌薄膜在铜铟硒薄膜太阳能电池中的界面(英文)

薄膜铜铟硒太阳能电池由于前后电极间欧姆接触导致电流损耗,高阻氧化锌层可以消除因表面空洞或表面损坏造成的前后电极短路,这种作用大小取决于氧化锌薄膜表面形貌和电阻率.本论文研究了用感应耦合等离子辅助磁控溅射氧化锌薄膜在铜铟硒薄膜太阳能电池中的应用,并分析氧化锌薄膜层和铜铟硒层的界面结构特点.实验用氧化锌陶瓷靶在氧气和氩气环境下进行溅射,当溅射气压为4mTorr,射频功率300W,直流偏压30V时,制备的氧化锌具有表面形貌均匀致密,电阻率为7×108Ω·cm、透光率80%以上等特性,与吸收层铜铟硒构成良好的异质结界面.     

纤维基ZnO/Ag/ZnO多层膜的制备、结构及性能研究

利用射频磁控溅射法,室温下通过交替溅射ZnO和Ag,在PET纤维基材上制备ZnO／Ag／ZnO纳米结构多层膜。运用扫描电镜和原子力显微镜对薄膜表面形貌进行分析,用分光光度计测试其透光性能,用四探针电阻测试仪测试其方块电阻。结果表明：纤维基Zno／Ag／ZnO多层膜致密、均匀,对紫外光表现为较强的吸收能力;Ag膜厚度的改变可以调控多层膜的光电性能;ZnO（40nm）／Ag（20nm）／ZnO（40m）多层膜呈现多晶结构,方块电阻为4．4Ω;透光率接近30％。