H+离子敏场效应传感器的SPICE模型仿真分析

本文从离子敏场效应晶体管(ISFET)的传感机理出发,利用计算机辅助设计软件(SPICE)建立了ISFET的物理模型。借助此模型,对器件的电学行为进行了模拟,仿真结果与实验数据取得了良好的一致性。     

CMOS微环境pH传感芯片研究

基于离子敏感场效应晶体管(ISFET)基本结构及其电学特性,提出了一种应用标准CMOS工艺实现的多层浮栅结构pH-ISFET.利用CMOS标准工艺中LPCVD淀积的Si3N4钝化层作为氢离子敏感层,pad工艺形成微区域独立传感窗口.片上集成100 μm×100 μm电极提供参考电位,消除了外加参考电位引起的溶液电压分布不均的现象.缓冲液从pH值1-13范围内对ISFET进行了测量,器件阈值电压随溶液pH值变化的平均灵敏度为44 mV/pH,线性度在10%范围内.本结构可用于生物微环境pH值集成传感芯片设计中.     

国外半导体微生物传感器的发展动态

<正> 一、半导体微生物传感器发展概况及特点 自从1970年Bergveld提出利用普通MOSFET将其金属栅去掉,对溶液中的离子能起敏感作用,故把这种场效应晶体管叫做离子敏场效应晶体管(ISFET)。     

一种适合离子敏感场效应晶体管的流动注射分析装置的研制

本文介绍了一种适合离子敏感场效应晶体管(简称 ISFET)的流动注射分析装置的设计及制做,该装置采用一体化的设计,具有结构简单、流动性能好,分析精度高、响应速度快、样品量少、操作简便等优点,可适合各种离子敏感场效应晶体管的流动测量,对离子敏感场效应晶体管的实用化起到一定推动作用。     

离子敏场效应晶体管宏模型的建立与仿真

根据电化学表面基模型理论,提出了一种简单有效的能够描述离子敏场效应晶体管(ISFET)静态特性的仿真模型,借助此模型,对器件的电学行为进行了模拟,仿真结果与实验数据基本相符.     

化学量传感器

<正> (三)pH-ISFET、ISFET和CHE-MFET 氢离子敏场效应晶体管是最基本的离子敏场效应晶体管。它与MOSFET的区别只在于用对氢离子有响应的敏感膜(如Si_3N_4膜)取代了金属栅。氢离子敏感膜     

参比场效应晶体管(REFET)及 其与ISFET集成化的研究

本文介绍为实现带有参比电极的ISFET测量探头微型化而研制成的一种新型探头。采用等离子聚合方法在ISFET敏感栅上覆盖一层聚苯烯薄膜(PPS),使其成为对H~+不敏感的参比场效应晶体管(REFET)。而后采用IC艺,将ISFET,REFET和伪参比电极集成化,得到可用于微量溶液测量的微型探头,将探头中的ISFET和REFET按差分对管方式连接于差放线路中,由于两管对溶液中pH值响应不同,可输出随pH值变化的差模信号。研制的REFET在pH4～pH11范围内几乎无响应,表明了PPS膜具有较少的表面态及良好的H~+掩蔽性。用集成化探头测量pH值,灵敏度可达55mV/pH。     

下一代晶体管露脸

ATDF公司和HPL公司最近展示了面向多栅场效应晶体管(MuGFET)的45nm技术节点上的工艺能力，MuGFET这种先进的半导体器件最终可能取代传统的CMOS晶体管。     

CMOS兼容的ISFET传感器模型和测量电路研究

随着CMOS工艺的不断发展,将离子敏场效应晶体管(ISFET)传感器与CMOS技术相结合,以达到提高集成度、降低成本、减小系统尺寸、提高系统可靠性。在对与CMOS工艺兼容的ISFET传感器结构模型分析的基础上,研究了一种测量电路,它具有有利于消除体效应的影响、减少共模噪声的影响、克服温度漂移等优点。对该测量电路进行模拟仿真,得到输出电压与pH值之间的关系图,结果表明:其结果与理论模型仿真值基本吻合。     

基于ISFET的农药检测生物传感技术

随着微电子、生物技术的发展,离子敏场效应晶体管(ISFET)生物传感技术已应用于农药检测,并显示出较好的优越性,而我国对基于ISFET的农药检测生物技术研究尚未展开。简单介绍了基于IS-FET的生物传感器的结构、原理,重点探讨了其在农药检测方面的研究应用,分析了ISFET生物传感器存在的问题与未来的发展。     

Ensemble Learning for Chemical Sensor Arrays

Electrochemical sensors, like ion-selective field transistors (ISFET), are electronic devices that merge solid-state electronic technology with chemical sensors so as to be sensitive to the concentration of a particular ion in a solution. However, as it has been previously reported, their response does not only depend on a single ion but also is affected by several interfering ions found in the solution to be measured. These interfering ions can be considered as noise and consequently, a post-processing stage that increases the SNR is obligatory. Our work shows how ensemble learning methods could be used in an array of chemical sensors in order to deal with this problem. In particular, we introduce a novel neural learning architecture for ISFET arrays, which employ ISFET models as prior knowledge. The proposed ensemble learning systems are RBF-like solutions based on bagging and optimal linear combination. Several experimental results are included, which demonstrate the interest and viability of the proposed solution.     

ISFET performance enhancement by using the improved circuit techniques

An approach to enhance accuracy of the output signal obtained from ISFET interface electronics due to the body effect is proposed. Based on an MOS drawing the same drain current as the ISFET, the scheme allows reduction of influence of body effect. The presented readout interface improves the accuracy of pH measurements, while maintaining operation at constant drain-source voltage and current condition. Using only one ISFET with a differential output configuration, we obtained temperature-dependency and long-term drift as well as common noise compensation. The proposed technique is simple and has a universal use for different ISFETs. In addition, a voltage-controlled dc offset error compensation circuit modulates the extracted signal to the desired dc level for the A/D converter for each sensor. Simulation and experimental results show a great effect on monolithic ISFET integration in CMOS technology.     

悬浮栅结构ISFET的HSPICE仿真

通过对ISFET敏感机理的分析,根据表面基模型,建立了悬浮栅结构ISFET器件的HSPICE行为模型,并对其静态输出特性,转移特性,以及pH值与界面势的关系进行了仿真,仿真结果表明:该模型与ISFET的理论和实验数据吻合较好。为ISFET/REFET差分结构集成传感器芯片设计提供了重要的理论参考价值。     

A nozzle-type ultra-micro-volume multi-ion sensor using a rear-gate SIS/ISFET

A nozzle-type micro multi-ion (NMM) sensor suitable for ultra-micro-volume sample-solution analysis has been developed using a newly designed rear-gate silicon-insulator-silicon (SIS) three-layer structure ISFET chip. The sensor inner volume is only 2.5 μl from the nozzle tip to the ISFET part for sensing the temperature and three types of ions. The outer body of the sensor is also sufficiently small to be dipped into the standard miniature sample vessels used in automatic blood analysers. K⁺, Na⁺ and Cl^- ion-sensing membranes are formed on the ISFET, and their basic characteristics and durabilities are checked. Furthermore, the sample solution volume needed for the sensor is estimated from pH and K⁺ ion flow-through sensing measurements. As a result, the sensor durability to cleaning by a detergent solution has been more than doubled by means of the membrane-locking structure of the ISFET chip. Also, the sample volume needed for the measurement has been drastically reduced to about 20 μl including prior sample-solution rinsing.     

Electrostatic discharge sensitivity tests for ISFET sensors

A set of tests using a standard electrostatic discharge (ESD) generator and a test setup to apply ESDs over ISFET-based chemical sensors in a reproducible way is proposed. The tests are used to study the ESD sensitivity of SiO₂/Si₃N₄ gate ISFETs as well as to prove the effectiveness of a designed protection system based on an integrated platinum ring electrode and a protective element. It is shown that ISFETs show high sensitivity to ESD when they are in contact with a solution and discharges are applied to ISFET contact pins or when ISFET contact pins are connected to the ground and discharges are applied to a solution drop deposited on the gate zone. These tests emulate typical situations occurring while an operator is handling sensors and serve to determine in which of these situations it is recommendable for lab personnel to use static control measures like wrist straps to ground lab personnel. These tests in which ISFETs showed maximum sensitivity to ESD were used to study the performance of the designed protection system.     

离子敏场效应晶体管

近年来对基于ＭＯＳ技术制造的离子散场效应晶体管（ＩＳＦＥＴ）的特性研究做了大量的工作。综述了ＩＳＦＥＴ器件（尤其是ｐＨ－ＩＳＦＥＴ）在敏感机理、集成化、封装和应用等方面的研究状况与新进展。