A monolithically integrated 1-Gb/s optical receiver in 1-μm CMOStechnology

Results of a monolithically integrated Si optical receiver for applications in optical data transmission and in optical interconnects with wavelengths of 638 and 850 nm are presented. The optoelectronic integrated circuit (OEIC) implementing a vertical p-type-intrinsic-n-type photodiode achieves a data rate of 1 Gb/s for 638 nm with a sensitivity of -15.4 dBm at a bit-error rate of 10^-9 . The sensitivity of this OEIC in a 1.0-μm CMOS technology is improved by at least a factor of four compared to that of published submicrometer OEICs. A 25-THz.Ω effective transimpedance bandwidth product of the implemented amplifier is achieved     

High-performance monolithically integratedIn0.53Ga0.47As/InP p-i-n /JFET optical receiverfront-end with adaptive feedback control

An optical transimpedance receiver front-end that is adaptable to a wide range of bit-rates up to 3 Gb/s has been realized by monolithically integrating high efficiency p-i-n photodiodes with low noise InGaAs junction field effect transistors. The transimpedance-bandwidth product of the receiver is 2.8 THz Ω. The average equivalent input noise current for full circuit bandwidth is 4.0 pA/√Hz. The preamplifier for nonreturn to zero data transmission without equalization of the frequency response at 1.55 μm offers a sensitivity of -41.5 dBm and -29.5 dBm at 140 Mb/s and 2.4 Gb/s, respectively. The dynamic range is 17 dB at 2.4 Gb/s and exceeds 30 dB at 500 Mb/s     

Monolithic eight-channel photoreceiver array OEICs for HDWDM applications at 1.55 mu m

Eight-channel transimpedance photoreceiver array OEICs have been successfully fabricated on 2" diameter InP substrates. The yield of fully functional arrays is as high as 37%. Individual receiver channels exhibit bandwidths in excess of 300 MHz and an average input equivalent noise current of around 4.8 pA/ square root (Hz), corresponding to an inferred sensitivity of -32.1 dBm at 622 Mbit/s. Each receiver channel is designed to drive standard 50 Omega loads.<>     

Ultralow noise 10 Gb/s p-i-n-HEMT optical receiver

The ultra-low-noise p-i-n-HEMT optical receiver employs a new low-pass filter type matching network. The design is based on general synthesis procedures, and utilizes accurate noise figure data for the HEMT at multigigahertz frequencies. The optical receiver demonstrates a flat frequency response with a -3 dB bandwidth of 6.4 GHz, a predicted sensitivity of -28 dBm at 10 Gb/s, and a measured input noise current of 4.3 pA/μsHz, which is the lowest noise performance reported to date     

A transimpedance APD optical receiver operating at 10 Gb/s

The authors report an optical receiver which uses a separate-absorption-and-multiplication avalanche photodiode (SAM-APD) to achieve high sensitivity at a bit rate of 10 Gb/s. A transimpedance front end incorporating HEMT devices is used for high bandwidth and low noise. The sensitivity (bit-error rate of 10^-9) is -28.7 dBm for a return-to-zero signal, and -27.0 dBm for a nonreturn-to-zero signal     

Speed and sensitivity limitations of optoelectronic receivers basedon MSM photodiode and millimeter-wave HBTs on InP substrate

Heterostructure bipolar transistors and MSM photodetectors based on compound semiconductors have demonstrated high-frequency performance beyond 100 GHz. By combining these state-of-the-art devices in a realistic integrated optoelectronic receiver, this letter demonstrates that it is possible to achieve a receiver sensitivity of -19.04 dBm at 16 Gb/s at a bit-error-rate of 10^-9. Further improvement of noise and bit-rate can be achieved by designing HBTs with lower junction capacitances     

High-speed monolithic silicon photoreceivers on high resistivityand SOI substrates

We compare monolithic silicon optical receivers fabricated on high resistivity and silicon-on-insulator (SOI) substrates. Each receiver consisted of a lateral p-i-n photodiode and an NMOS transimpedance preamplifier. At a drain voltage (V_DD) of 3.5 V, a photodiode voltage (V_PD) of 30 V, and a wavelength of 850 nm, the high resistivity receiver exhibited sensitivities of -31.9 dBm at 622 Mb/s and -23.2 dBm at the maximum operating speed of 1.0 Gb/s. At V_DD =5 V and V_PD=20 V, the sensitivity of the SOI receiver was -26.1 dBm at 622 Mb/s, -20.2 dBm at 1.0 Gb/s and -12.2 dBm at the maximum speed of 2.0 Gb/s. Single supply operation at 5 V and 3 V was also demonstrated for the SOI receiver. Methods for extending the speed and improving the sensitivity characteristics in more advanced technologies with lower supply voltages are discussed     

A 12-Gb/s high-performance, high-sensitivity monolithic p-i-n/HBTphotoreceiver module for long-wavelength transmission systems

A very high sensitivity, high speed, fiber-pigtailed photoreceiver module is described. The OEIC photoreceiver, composed of a p-i-n photodetector monolithically integrated with an InP-InGaAs heterojunction bipolar transistor (HBT)-based transimpedance amplifier, has measured sensitivity of -20 dBm and -17.6 dBm for data rates of 10 and 12 Gb/s, respectively, at a bit error rate of 1×10^-9. These results are the best ever reported for an OEIC photoreceiver at these speeds. In an optical transmission experiment with a low noise erbium-doped fiber amplifier (EDFA) preceding the OEIC photoreceiver, the measured sensitivities were -35.2 and -32 dBm at 10 and 12 Gb/s respectively     

10-Gb/s strained MQW DFB-LD transmitter module and superlattice APDreceiver module using GaAs MESFET IC's

This paper describes the design and performance of a 10-Gb/s laser diode (LD) transmitter and avalanche photodiode (APD) receiver, both of which are based on GaAs MESFET IC's. The LD transmitter consists of a strained MQW distributed-feedback LD and one chip LD driver IC. The module output power is +4.6 dBm at 10 Gb/s. The APD receiver consists of an InGaAsP/InAl/As superlattice-APD and an IC-preamplifier with the 10-Gb/s receiver sensitivity of -27.4 dBm. As for the LD transmitter, we discuss the optimum impedance-matching design from the viewpoint of high-speed interconnection between LD and driver IC's. As for the APD receiver, the key issue is input impedance design of preamplifier IC, considering noise and bandwidth characteristics. Total performance of the transmitter and receiver is verified by a 10-Gb/s transmission experiment and a penalty-free 10-Gb/s fiber-optic link over 80 km of conventional single-mode fiber is successfully achieved     

A monolithic 5 Gb/s p-i-n/HBT integrated photoreceiver circuit realized from chemical beam epitaxial material

The authors report on a high performance monolithic photoreceiver fabricated from chemical beam epitaxy (CBE) grown InP/InGaAs heterostructures, incorporating a p-i-n photodetector followed by a transimpedance preamplifier circuit configured from heterojunction bipolar transistors (HBTs). The optoelectronic integrated circuit (OEIC) was fabricated on a semi-insulating Fe-doped InP substrate. Microwave on-wafer measurements of the frequency response of the transistors yielded unity current gain cutoff frequencies of 32 GHz and maximum oscillation frequencies of 28 GHz for collector currents between 2 and 5 mA. The photoreceiver was operated up to 5 Gb/s, at which bit rate a sensitivity of -18.8 dBm was measured at a wavelength of 1.5 mu m. The results demonstrate that the CBE growth technique is suitable for high performance HBT-based OEICs.<>     

All-silicon IC 10 Gb/s optical receiver

A fully integrated 10 Gb/s optical receiver was realized with silicon ICs. The receiver was fabricated on a breadboard utilizing multicarrier assembly. Receiver sensitivity of -29.3 dBm was achieved using an Er-doped optical fiber preamplifier     

A 0.2–2 Gb/s 6x OSR Receiver Using a Digitally Self-Adaptive Equalizer

This paper presents a very robust 6x OSR receiver for 0.2-2 Gb/s binary NRZ signals, introducing an adaptive equalizer that is auto-calibrating on sample data statistics for reliable data recovery in presence of excessive intersymbol interference, noise and crosstalk. The proposed time domain analysis of the data eye obtained with the oversampling architecture is used to tune the equalizer transfer characteristic. The auto-calibration scheme is fully implemented in the digital domain, resulting in a hardware and power efficient architecture with low process-voltage-temperature (PVT) sensitivity. This robust and highly digitized receiver is demonstrated in 0.18 CMOS technology and is able to equalize variable cable losses up to 22 dB @ 1 GHz. The self-adaptive equalizer solution occupies only 0.05 and consumes 9 mW from a 1.8 V supply and can handle up to 20 m 100 Omega STP cable @ 2 Gb/s. The entire receiver consumes 110 mW operating at 2 Gb/s with bit error rates of better than < 10^-12.     

Rayleigh scattering influence on performance of 10 Gb/s opticalreceiver with Er-doped optical fiber preamplifier

The achievement of -30.8 dBm (630 photon/bit) receiver sensitivity at 10 Gb/s, with an Er³⁺-doped optical fiber preamplifier, is discussed. This is an 8.3-dB sensitivity improvement over the avalanche-photodiode/FET receiver. Power penalties caused by a noise increase due to Rayleigh backscattering by the transmission optical fiber have been evaluated. Approximately -30-dB Rayleigh scattering from a 20-km optical fiber resulted in a 3.5-dB power penalty for a 25-dB-gain optical amplifier     

In-band amplified spontaneous emission noise filtering with adispersion-imbalanced nonlinear loop mirror

This paper reports the removal of in-band amplified spontaneous emission (ASE) noise in a 10 Gb/s noise-loaded return-to-zero (RZ) signal using a dispersion-imbalanced loop mirror. The resulting receiver sensitivity is improved from -37.0 dBm to -37.7 dBm. The dependence of receiver sensitivity on the loop mirror bias is also investigated, and the optimal bias point is found to be where the loop transmissivity decreases with increasing input power     

Design and performance analysis of InP-based high-speed andhigh-sensitivity optoelectronic integrated receivers

A novel transimpedance optoelectronic receiver amplifier suitable for monolithic integration is proposed and analyzed by exploiting state-of-the-art high-speed MSM photodiodes and HBT's based on lattice-matched InGaAs-InAlAs heterostructures on InP substrates. The projected performance characteristics of this amplifier indicate a high transimpedance (≈3.6 kΩ), a large bandwidth (17 GHz), and an excellent optical detection sensitivity (-26.8 dBm) at 17 Gb/s for the standard bit-error-rate of 10^-9. The latter corresponds to an input noise spectral density, √(i_in²/B), of 2.29 pA/√(Hz) for the full bandwidth. The bandwidth of the amplifier can be increased to 30 GHz for a reduced transimpedance (0.82 kΩ) and a lower detection sensitivity, i.e., -21 dBm at 30 Gb/s. The amplifier also achieves a detected optical-to-electrical power gain of 21.5 dBm into a 50 Ω load termination. The design utilizes small emitter-area HBT's for the input cascoded-pair stage, followed by a two-step emitter-follower involving one small and one large emitter-area HBT's. The design strategy of using small emitter-area HBT's is matched by a low-capacitance novel series/parallel connected MSM photodiode. This combined approach has yielded this amplifier's combined high performance characteristics which exceed either achieved or projected performances of any receiver amplifier reported to-date. The paper also discusses the issues concerning IC implementation of the receiver, including the means of realizing a high-value feedback resistor     

27-GHz bandwidth high-speed monolithic integrated optoelectronicphotoreceiver consisting of a waveguide fed photodiode and anInAlAs/InGaAs-HFET traveling wave amplifier

A monolithic integrated photoreceiver for 1.55-μm wavelength has been designed for operation in a 20-Gb/s synchronous digital hierarchy system (SDH/SONET), based on a new integration concept. The optoelectronic integrated circuit (OEIC) receiver combines a waveguide-integrated PIN-photodiode and a traveling wave amplifier in coplanar waveguide layout with four InAlAs/InGaAs/InP-HFETs (0.7-μm gate length). The receiver demonstrates a bandwidth of 27 GHz with a low frequency transimpedance of 40 dBΩ. This is, to our knowledge, the highest bandwidth ever reported for a monolithic integrated photoreceiver on InP. Furthermore, a receiver sensitivity of -12 dBm in the fiber (20 Gb/s, BER=10^-9) and an overall optical input dynamic range of 27 dB is achieved. Optical time domain multiplex (TDM) system experiments of the receiver packaged in a module show an excellently shaped eye pattern for 20 Gb/s and an overall sensitivity of -30.5 dBm (BER=10^-9) [including erbium doped fiber amplifiers (EDFA)]     

Optoelectronic integrated receivers on InP substrates byorganometallic vapor phase epitaxy

The monolithic integrated ion of a p-i-n photodiode and a high-electron mobility transistor (HEMT) amplifier on an InP substrate by organometallic vapor-phase epitaxy is discussed. The receiver operated with up to 1.6 Gb/s nonreturn-to-zero optical signals. The responsivity was 1 kV/W and the minimum optical power at a bit error rate of 10^-9 was -24 dBm for 400 Mb/s nonreturn-to-zero optical signals     

Sensitivity analysis of an HgCdTe based photovoltaic receiver for long-wavelength free space optical communication systems

We examine theoretically the performance of an Hg0.77Cd0.23Te based p-n photodetector/HFET optical receiver due to its possible application at 10.6 μm free space optical communication system at high bit rate.A rigorous noise model of the receiver has been developed for this purpose.We calculate the total noise and sensitivity of the receiver.The front-end of the receiver exhibits a sensitivity of -45 dBm at a bit rate of 1 Gb/s and -30 dBm at a bit rate of 10 Gb/s,and the total mean-square noise curren t〈i2...     

1 Gb/s operation and bit-error rate studies of FET-SEEDdiode-clamped smart-pixel optical receivers

Experimental studies of the bit-error rate (BER) of diode-clamped optical receivers based on FET-SEED technology are described. 1 Gb/s operation of a receiver with optical input and electrical output is obtained. A strong dependence of the BER on clamping voltage is reported, confirming the digital nature of the receiver. The best receiver sensitivity measured at 1 Gb/s and an error rate of 1×10 ^-9 is roughly -11 dBm. At 622 Mb/s, it is -22 dBm     

Gigabit receiver ICs for optical communications

The authors discuss gigabit receiver ICs for optical communications, focusing on their circuit and package design, the performance of receivers that were fabricated, and their application to a 1.6 Gb/s optical receiver. The key technologies for the receivers are discussed, and a design based on these key technologies is proposed. The proposed design is used to fabricate six receiver ICs (eight chips) using an ultra-high-speed bipolar process with transistors having a unity gain bandwidth of 6-8 GHz. The receivers are suitable for long-haul optical transmission at bit rates up to 1.6 Gb/s. Experimental results show that the 1.6 Gb/s receiver has an optical dynamic range of more than 23 dB without any adjustment, and the received average optical power required to maintain a 10^-11 error rate is less the -31 dBm