高折射率锐钛矿TiO2薄膜的低温直流磁控溅射制备技术

目的研究低温条件下高折射率锐钛矿结构TiO_2薄膜的制备条件及影响因素。方法用直流磁控溅射技术(DCMS)和改进的直流磁控溅射技术(能量过滤磁控溅射技术,EFMS)制备TiO_2薄膜。采用正交试验方法研究DCMS技术工艺参数对TiO_2薄膜的影响,确定了低温制备高折射率锐钛矿TiO_2的最优制备条件,在该最优制备条件下,又采用FEMS技术制备了TiO_2薄膜,并对比两种技术制备的薄膜。TiO_2薄膜的微结构用X射线衍射和Raman光谱衍射进行表征,样品的表面形貌用扫描电镜SEM进行观察,薄膜的光学特性用椭偏光谱仪测试、拟合处理得到。结果在较低的温度100℃下,利用DCMS和EFMS技术制备的TiO_2薄膜具备良好的单一锐钛矿结构。EFMS技术制备TiO_2的孔隙率为4.7%,550 nm处的折射率为2.47,平均晶粒尺寸为12.5 nm。经计算,DCMS和EFMS技术制备的TiO_2薄膜的光学带隙分别为3.08 e V和3.37 e V。结论利用DCMS技术和EFMS技术可在低温制备出锐钛矿TiO_2薄膜,EFMS技术制备的薄膜孔隙率较低,折射率较高,晶粒较均匀细小,光学带隙较大。     

氧气分压和热处理温度对制备玻璃基二氧化钛薄膜的表面形貌和光学性能的影响

用直流反应磁控溅射法制备了玻璃基TiO2薄膜。溅射过程中，Ar气的分压保持在0．8SPa不变，而O2的分压在0．10Pa～0．6SPa之间变化：镀膜试样在400℃～550℃之间进行热处理。用扫描电镜(SEM)、透射电镜(TEM)和紫外．可见光谱仪研究了薄膜的表面形貌、薄膜沉积速率和光学带隙宽度。结果表明，随着氧气分压从0．10Pa增加到0．6SPa，薄膜沉积速率从4．4nm／min下降到2．2nm／min，光学带隙从3．67eV下降到3．59eV，薄膜表面呈现出均匀的纳米晶粒和纳米孔：550℃热处理有助于较致密薄膜形成纳米晶粒和纳米孔，并降低带隙宽度。     

直流磁控溅射制备二氧化硅薄膜及其性能

采用直流反应磁控溅射法在单晶硅上制备二氧化硅薄膜.利用X射线衍射仪(XRD)、原子力显微镜(AFM)以及傅里叶交换红外光谱仪(FTIR)等研究制备过程中氧含量和溅射功率对薄膜的微结构、表面形貌以及红外吸收等性能的影响.结果表明,室温下溅射出的SiO2薄膜是非晶结构的;随着氧含量的增加,折射率、沉积速率、粗糙度都逐渐减小;沉积速率和粗糙度随着溅射功率的增加而增加;当氧气含量为40％时,薄膜的折射率接近二氧化硅的折射率(1.46).退火后薄膜的压电常数随氧含量的增加先增大再减小,介电常数随着频率的增大而减小.     

磁控溅射工艺对FeCrCoNiMn氧化物薄膜质量的影响

目的 探究氧气浓度、基底温度和溅射功率对高熵合金氧化物薄膜成分、膜基结合力和硬度的影响,分别找出某一工艺参数的改变对性能的影响趋势,并总结影响因素和规律。方法 采用射频磁控溅射方法在Si(100)基体上制备不同工艺参数下的(FeCrCoNiMn)Ox薄膜,结合X射线衍射仪(XRD)、能谱仪(EDS)、划痕仪、纳米压痕仪分析薄膜的物相结构、成分组成、膜基结合力、硬度和弹性模量。结果 薄膜为FCC结构。膜基结合力、硬度和弹性模量随着氧气浓度的增加,分别由4.85 N、6.06 GPa、137.8 GPa提高至6.56 N、14.51 GPa、189.4 GPa,最后降至3.75 N、7.52 GPa、144.9 GPa。薄膜的膜基结合力、硬度和弹性模量随着基底温度的升高而升高,分别由3.6 N、12.58 GPa、164.2 GPa升高到5.05 N、14.51 GPa、189.4 GPa。随着溅射功率的提高,膜基结合力由5.05 N提高至8.25 N,硬度和弹性模量呈先升高后降低的趋势。结论 与普通FeCrCoNiMn合金薄膜相比,氧原子的引入使(FeCrCoNiMn)Ox薄膜拥有更大的混合熵,增强了其固溶强化效应。氧气浓度和溅射功率对薄膜成分的影响较大,基底温度对成分无明显影响。适当提高氧气浓度和溅射功率可以有效提高薄膜的力学性能,在温度为350 ℃时膜基结合力和硬度均最好。     

PCrNi3Mo钢表面磁控溅射CrN涂层工艺优化及性能

采用磁控溅射技术在PCrNi3Mo钢表面沉积了CrN涂层。利用激光共聚焦显微镜、扫描电镜(SEM)、纳米压痕仪、X射线衍射仪(XRD)对涂层的形貌、硬度与弹性模量和相结构进行了表征,研究了基体负偏压、溅射电流和N2/Ar流量比对溅射涂层结构和力学性能的影响。结果表明:在基体负偏压为100 V、溅射电流为0.2 A、N2/Ar流量比为1时溅射的CrN涂层质量最佳,其硬度和弹性模量分别为21.38 GPa和272.71 GPa,较PCrNi3Mo钢基体的硬度(5.57 GPa)与弹性模量(258 GPa)明显提高。     

基于纳米压痕载荷-位移曲线的磁控溅射镍涂层力学性能计算

利用纳米压痕载荷-位移曲线计算了直流脉冲磁控溅射镍涂层的硬度、弹性模量和接触刚度。研究了溅射功率和偏压对镍涂层结构和力学性能的影响。结果表明,随溅射功率的增大,镍涂层生长取向均呈无择优生长状态,弹性模量、接触刚度变化不大,硬度先增加后减小。偏压增大会使镍涂层呈现明显的(111)取向生长,接触刚度增大,弹性模量和硬度都先增大后减小。     

磁控溅射制备Mo薄膜的优化工艺和组织及性能研究

基于正交试验设计,采用射频磁控溅射技术在不同工艺条件下制备了一系列纯金属Mo薄膜。以薄膜的纳米硬度和结合强度为评价指标,考察分析了溅射靶功率、基片温度、氩气流量和真空度4个工艺参数对溅射Mo薄膜综合力学性能和组织结构的影响规律及机理。结果表明,所制备的多种Mo薄膜均为立方多晶结构,并在(110)和(220)晶面择优生长。薄膜由细小的"树枝"状颗粒随机堆叠而成,表面呈压应力状态。综合考虑薄膜的沉积质量和沉积效率,提出磁控溅射制备Mo薄膜的较佳工艺参数为Mo靶功率100 W,沉积温度120℃,氩气流量90 cm3/min,真空度0.2 Pa。采用优化工艺制备的Mo薄膜具有良好的结晶状态和均匀致密的组织结构,纳米硬度为7.269 GPa,结合强度高达33.8 N。     

反应磁控溅射法制备二氧化硅薄膜的研究

采用反应磁控溅射的方法沉积二氧化硅薄膜,研究了二氧化硅薄膜的光学特性,并与用反应离子束溅射方法沉积二氧化硅薄膜进行了对比。实验结果表明:用反应磁控溅射法沉积二氧化硅薄膜,薄膜的折射率、沉积速率主要受反应气体(氧气)浓度的影响,氧气含量超过15%(体积分数)后,溅射过程进入反应模式,沉积速率随氧气浓度增加而降低;入射光波长为630 nm时,薄膜折射率为1.50。对比2种薄膜沉积方法后确定,在二氧化硅薄膜工业生产中,反应磁控溅射方法更为可取。     

超纳米金刚石薄膜的显微力学性能表征（英文）

研究4种不同气氛下制备的可应用于MEMS方面的超纳米金刚石薄膜的显微力学特征。利用纳米压痕技术得到样品的加载-卸载曲线及硬度和弹性模量随压入深度的变化关系。结果表明,无Ar条件下制备的薄膜具有最好的弹性回复能力、最高的硬度(72.9 GPa)和弹性模量(693.7 GPa)。同时低Ar含量更有利于提高薄膜的硬度和弹性模量。以上结果说明无Ar或低Ar含量更有利于提高纳米金刚石薄膜的力学性能,以更好地应用于MEMS方面。     

磁控溅射制备TiCN复合膜的微结构与性能

通过磁控溅射技术制备一系列不同石墨靶功率的TiCN复合膜。分别利用X射线衍射仪、纳米压痕仪和高温摩擦磨损仪研究薄膜的微观结构、力学性能及室温和高温摩擦磨损性能。结果表明:随着石墨靶功率的增加,TiCN(111)峰逐渐宽化,晶粒尺寸逐渐减小,薄膜最后接近非晶结构。薄膜的硬度与弹性模量呈先增大后减小的趋势,在石墨靶功率为90 W时薄膜的硬度和弹性模量最大,分别为28.2和230 GPa。随着石墨靶功率的增加,室温下TiCN复合膜的摩擦因数逐渐减小,TiCN复合膜的耐磨性能明显提高。当环境温度升高到300~500℃时,TiCN薄膜的摩擦因数明显增大。TiCN复合膜的摩擦磨损性能受薄膜微观结构、空气中的水蒸气和氧气及环境温度等一系列因素的影响。     

Influence of O2/Ar flow ratio on the structure and optical properties of sputtered hafnium dioxide thin films

Hafnium dioxide (HfO₂) thin films were deposited on a quartz substrate by RF reactive magnetron sputtering. The influence of O₂/Ar flow ratio on the deposition rate, structure and optical properties of HfO₂ thin films were systematically studied using X-ray diffraction (XRD), scan electron microscopy (SEM) and UV-visible spectroscopy. The results show that the deposition rate decreases obviously when the O₂/Ar flow ratio increases from 0 to 0.25 and then, decreases little as the O₂/Ar flow ratio further increases to 0.50. The HfO₂ thin films prepared are all polycrystalline with a monoclinic phase. The thin film deposited with pure argon shows a preferential growth and has considerably improved crystallinity and much larger crystallite size. Meanwhile, after oxygen is introduced into the deposition, the thin films prepared have random orientation, weakened crystallinity and smaller crystallite size. The refractive index is higher for the thin film deposited without oxygen and increases as the O₂/Ar flow ratio increases from 0.25 to 0.50. The band gap energy of the thin film increases with an increasing O₂/Ar flow ratio.     

OPTICAL CHARACTERIZATION OF TiO2 THIN FILM ON SILICON SUBSTRATE DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

1.IntroductionTiO2thin film hasattracted considerable attention in recentyears,due to itshigh refractive index,high transparency in the visibleand near-infrared w avelength region,high dielectricconstant,w ide bandgap,high w earresistance and stability,etc.These m ake itsuitable foruses as solarcells[1-3],protectiveantireflection film s[4],photocatalytic detoxification of polluted w ater[5],electrochom ic devices[6],self-cleaning and antifogging film s[7]and so on.A tpresent,m any differenttec…     

射频磁控溅射制备TiO2光催化薄膜的表征

在不同的Ar和O2气流量比下，利用射频磁控溅射技术在载波片上制备了TiO2薄膜。利用X射线衍射(XRD)，原子力显微镜(AFM)，拉曼光谱和UV-VIS-NIR分光光度计等技术对薄膜进行了表征。结果表明在Ar：O2=20sccm：5sccm下制备的薄膜具有较高的光催化活性。     

EFFECT OF THE DEFECT STATES DENSITY ON OPTICAL BAND GAP OF CdIn2O4 THIN FILM

Transparent conducting oxides Cdln2O4 thin films were prepared by radio-frequency reactive sputtering from a Cd-ln aUoy target in Ar O2 atmosphere. By transmission spectrum and Hall measurement for different samples prepared at different substrate temperatures, it could be found that the carrier concentration would increase with the decrease of substrate temperature, but absorption edge showed an abrupt variation from a blue shift to a red shift. TheoreticaUy, the paper formulated the effect of high-density point defects on band structures; it embodied the formation of band tailing, Burstein-Moss shift and band-gap narrowing. The density of holes will influence the magnitude of optical band gap and transmittance of light. Since extrapolation method does not fit degenerate semiconductor materials, a more accurate method of obtaining optical band gap is curve fitting. In addition, ionized impurities scattering is the main damping mechanism of the free electrons in Cdln2O4 films, the density of ionized impurities induced by altering substrate temperature will affect the carriers mobility.     

Carbon-Doped Titanium Oxide Films by DC Reactive Magnetron Sputtering Using CO2 and O2 as Reactive Gas

CO2and O2were employed as reactive gases to fabricate carbon-doped titanium oxide films using DC reactive magnetron sputtering.Microstructure,composition and optical band gap of the films were investigated by X-ray diffraction,X-ray photoelectron spectroscopy,and UV–visible spectrophotometer,respectively.The results showed that carbon-doped titanium monoxide films(C-TiO) with a carbon concentration of 5.8 at.% were obtained in an Ar/CO2mixed atmosphere.However,carbon-doped rutile and anatase(C-TiO2) with a carbon concentration of about 1.4 at.% were obtained in an Ar/CO2/O2mixed atmosphere.The optical band gaps of C-TiO and C-TiO2were about 2.6 and 2.9 eV,respectively.Both of them were narrower than that of pure TiO2films.Films with narrowed optical band gap energy are promising in promoting their photo-catalytic activity.     

氧流量对铟锡氧化物薄膜光电性能的影响

采用射频磁控溅射法，在不同氧流量（0～10sccm）的条件下沉积了铟锡氧化物（In2O3-SnO2）透明导电薄膜。紫外分光光度计测试薄膜的透射率，四点探针测试薄膜的方阻，椭偏仪测试薄膜的复折射率和薄膜厚度，XPS测试ITO薄膜的成分和电子结构。结果表明：薄膜的沉积速率和折射率与氧流量有关，薄膜厚度为60nm，氧流量在9sccm时，透射率超过80％（波长λ=400nm～700nm，包括玻璃基体），退火后透射率、方阻明显改善。XPS分析表明，薄膜中的亚氧化物的存在降低了薄膜的光电性能，控制氧流量可减少亚氧化物。     

表面修饰TiO2光催化薄膜的表征

利用射频磁控溅射技术，以Ar和O2气混合气体为溅射气体在载玻片上制备了锐钛相TiO2薄膜。为了提高Ti02薄膜的光催化活性，在TiO2薄膜表面进行了钽修饰。利用X射线衍射(XRD)，原子力显微镜(AFM)和UV-VIS-NIR分光光度计等技术对薄膜进行了表征。结果表明：对TiO2薄膜的表面进行适量的Ta元素修饰可以提高其光催化活性。     

Electrical and optical properties of tantalum oxide thin films prepared by reactive magnetron sputtering

Tantalum oxide thin films were prepared by using reactive dc magnetron sputtering in the mixed atmosphere of Ar and O₂ with various flow ratios. The structure and O/Ta atom ratio of the thin films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy (XPS). The optical and dielectric properties of the Ta₂O₅ thin films were investigated by using ultraviolet-visible spectra, spectral ellipsometry and dielectric spectra. The results reveal that the structure of the samples changes from the amorphous phase to the β-Ta₂O₅ phase after annealing at 900 °C. The XPS analysis showed that the atomic ratio of O and Ta atom is a stoichiometric ratio of 2.50 for the sample deposited at Ar:O₂ = 4:1. The refractive index of the thin films is 2.11 within the wavelength range 300-1000 nm. The dielectric constants and loss tangents of the Ta₂O₅ thin films decrease with the increase of measurement frequency. The leakage current density of the Ta₂O₅ thin films decreases and the breakdown strength increases with the increase of Ar:O₂ flow ratios during deposition.