共查询到20条相似文献,搜索用时 765 毫秒
1.
V. A. Kulbachinskii R. A. Lunin N. A. Yuzeeva I. S. Vasilievskii G. B. Galiev E. A. Klimov 《Semiconductors》2013,47(7):935-942
The influence of the width of the quantum well L and doping on the band structure, scattering, and electron mobility in nanoheterostructures with an isomorphic In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well grown on an InP substrate are investigated. The quantum and transport mobilities of electrons in the dimensionally quantized subbands are determined using Shubnikov-de Haas effect measurements. These mobilities are also calculated for the case of ionized-impurity scattering taking into account intersub-band electron transitions. It is shown that ionized-impurity scattering is the dominant mechanism of electron scattering. At temperatures T < 170 K, persistent photoconductivity is observed, which is explained by the spatial separation of photoexcited charge carriers. 相似文献
2.
We have successfully grown bulk In0.53Ga0.47As on InP using tertiarybutylarsine (TBA), trimethylindium and trimethylgallium. The growth temperature was 602° and the V/III
ratio ranged from 19 to 38. Net carrier concentrations were 2 – 4 × 1015 cm-3, n-type, with a peak 77 K mobility of 68,000 cm2/V. sec. Increasing compensation was observed in In0.53Ga0.47As grown at higher V/III ratios. PL spectra taken at 5 K revealed strong near bandgap emission at 0.81 eV—with the best sample
having a FWHM of 2.5 meV. At lower energies, donor-acceptor pair transitions were evident. Strong and sharp 5 K PL emission
was observed from InP/In0.53Ga0.47As/InP quantum wells grown with TBA. 相似文献
3.
N. Takahashi M. Shiota Y. Zhu M. Shimizu D. Hirata Y. Sakamoto T. Sugino J. Shirafujf 《Journal of Electronic Materials》1996,25(5):633-636
A drastic decrease in the sheet carrier concentration of modulation-doped Al0.48In0.52As/Ga0.47In0.53As/InP heterostructures has been observed after O2 plasma treatment followed by thermal treatment up to 350°C. The decrease in sheet carrier concentration, which is speculated
to be caused by both plasma damage and impurities penetrating from the surface of the epilayer, can be suppressed substantially
by using PH3 plasma treatment prior to the O2 plasma and thermal treatments. 相似文献
4.
In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors (HBTs) were grown metamorphically on GaAs substrates by molecular beam epitaxy. In these
growths, InAlAs, AlGaAsSb, and InP metamorphic buffer layers were investigated. The InAlAs and AlGaAsSb buffer layers had
linear compositional grading while the InP buffer layer used direct binary deposition. The transistors grown on these three
layers showed similar characteristics. Bulk thermal conductivities of 10.5, 8.4, and 16.1 W/m K were measured for the InAlAs,
AlGaAsSb, and InP buffer layers, as compared to the 69 W/m K bulk thermal conductivity of bulk InP. Calculations of the resulting
HBT junction temperature strongly suggest that InP metamorphic buffer layers should be employed for metamorphic HBTs operating
at high power densities. 相似文献
5.
D. S. Ponomarev R. A. Khabibullin A. N. Klochkov A. E. Yachmenev A. S. Bugaev D. I. Khusyainov A. M. Buriakov V. P. Bilyk E. D. Mishina 《Semiconductors》2018,52(7):864-869
The results of experimental studies of the time dynamics of photoexcited charge carriers in In0.53Ga0.47As/In0.52Al0.48As superlattices grown by molecular-beam epitaxy on a GaAs substrate with a metamorphic buffer are reported. On the basis of the results of the numerical simulation of band diagrams, the optimal thickness of the In0.52Al0.48As barrier layer (4 nm) is chosen. At this thickness, the electron wave functions in In0.53Ga0.47As substantially overlap the In0.52Al0.48As barriers. This makes it possible to attain a short lifetime of photoexcited charge carriers (τ ~ 3.4 ps) at the wavelength λ = 800 nm and the pumping power 50 mW without doping of the In0.53Ga0.47As layer with beryllium. It is shown that an increase in the wavelength to λ = 930 nm (at the same pumping power) yields a decrease in the lifetime of photoexcited charge carriers to τ ~ 2 ps. This effect is attributed to an increase in the capture cross section of trapping states for electrons with lower energies and to a decrease in the occupancy of traps at lower excitation densities. 相似文献
6.
T. Mishima M. Takahama Y. Uchida T. Tanoue S. Takahashi 《Journal of Electronic Materials》1991,20(1):113-116
Very high purity In00.53Ga0.47As layers were grown by molecular beam epitaxy (MBE). Origins ofn-type impurities in undoped In0.53Ga0.47As grown on an InP:Fe substrate were systematically examined. The most possible origins were impurities diffusing from the
InP:Fe substrate and those contained in As molecular beam. These impurities were dramatically reduced by using an InAlAs buffer
layer and a growth condition of high substrate temperature and low As pressure. The lowest electron concentration of the In00.53Ga0.47As layer wasn = 1.8 × 1013 cm-3 with mobilitiesμ = 15200 cm2/Vs at 300 K andμ = 104000 cm2/Vs at 77 K. 相似文献
7.
Tatsushi Akazaki Junsaku Nitta Hideaki Takayanagi Takatomo Enoki Kunihiro Arai 《Journal of Electronic Materials》1996,25(5):745-748
This paper examines a detailed analysis by Shubnikov-de Haas measurements of the effective mass of two-dimensinal electron
gas (2DEG) in an In0.52Al0.48As/ In0.53Ga0.47As modulation-doped (MD) structure with an InAs quantum well inserted into the InGaAs channel (InAs-inserted channel). The
measured effec-tive mass of 2DEG in the InAs-inserted-channel MD structure is in good agreement with the calculated one of
the strained InAs layer on In0.53Ga0.47As. This indicates that almost all of the 2DEG forms in the strained InAs quantum well. These results show that the InAs-inserted-channel
MD structure improves the electron confinement, since the 2DEG is confined in the InAs quantum well with the thickness of
4 nm. 相似文献
8.
I. S. Vasil’evskii G. B. Galiev Yu. A. Matveev E. A. Klimov J. Požela K. Požela A. Sužiedėlis Č. Paškevič V. Jucienė 《Semiconductors》2010,44(7):898-903
The electron conduction in a two-dimensional channel of an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well (QW) with a δ-Si doped barrier has been investigated. It is shown that the introduction of thin InAs barriers
into the QW reduces the electron scattering rate from the polar optical and interface phonons localized in the QW and increases
the electron mobility. It is found experimentally that the saturation of the conduction current in the In0.53Ga0.47As channel in strong electric fields is determined by not only the sublinear field dependence of the electron drift velocity,
but also by the decrease in the electron concentration n
s
with an increase in the voltage across the channel. The dependence of n
s
on the applied voltage is due to the ionized-donor layer located within the δ-Si doped In0.52Al0.48As barrier and oriented parallel to the In0.53Ga0.47As QW. 相似文献
9.
Strained AlxIn1−xAs/Ga0.47In0.53As heterojunction N-p+ diodes and heterojunction bipolar transistors (HBTs) have been grown on InP substrates by solid-source molecular-beam epitaxy,
fabricated, and characterized. To determine the effects of the conduction-band discontinuity at the emitter-base heterojunction
on turn-on voltage and ideality factor, a strained Al0.7In0.3As layer is inserted in the emitter near the base. Changes in transport across the junction are observed as a function of
the strained-layer position and thickness. These results were used to implement strained emitter HBTs. 相似文献
10.
The etching characteristics of InGaAlAs alloys lattice-matched to InP were investigated using low pressure (1 mTorr) electron
cyclotron resonance CH4:H2:Ar or CCl2F2:Ar discharges with additional radiofrequency biasing of the samples. Using CCl2F2:Ar discharges with ≥250V negative bias it is possible to obtain equi-rate etching of the material for all compositions between
In0.53Ga0.47As and In0.52Al0.48As. At lower bias values, formation of A1F3 on the surface leads to an inhibition of the etch rates. By making use of the differential etch rates of InGaAlAs layers
of different compositions in CH4:H2:Ar mixtures, it is possible to choose dc bias values that allow one to stop the etching at a pre-selected depth in a multi-layer
structure. For example, for -150 V bias, one can etch through In0.53Ga0.47As, In0.53Ga0.40Al0.07As and Ino.53Ga0.30Al0.17As layers, and stop at an underlying layer with composition In0.53Ga0.20Al0.27As. 相似文献
11.
It has been demonstrated that a highly doped (Si:3 × 1019 cm-3) triple capping layer consisting of n+−In0.53Ga0.47As, n+−In0.52Al0.48As, and n+-In0.53Ga0.47As can remarkably reduce the parasitic source resistance in InP-based high electron mobility transistors (HEMTs). The analysis
of the source resistance revealed that the resistance element at the n+−In0.53Ga0.47As/un−In0.52Al0.48As/un-In0.53Ga0.47As channel heterointerfaces was as large as 70% of the source resis-tance when nonalloyed ohmic electrodes were used. The
highly doped triple capping layer reduces the resistance contribution of vertical conduction between the capping layer and
2DEG channel. A low source resistance of 0.57 Ωmm and a low contact resistivity of 3 × 10−5 Ωcm2 were obtained for the HEMTs with the highly doped triple capping layer, which were 60% lower and one order of magnitude smaller
than those for the HEMTs with a conventional single capping layer doped 5 × 1018 cm−3, respectively. These values were also 70 and 30% lower than those for the HEMTs with a highly doped (3 × 1019 cm−3) single capping layer, respectively. The low source resistance brings high peak extrinsic transconduc-tance of 1 S/mm for
a device with 0.4 μm long gate, which was 42% higher than the previously reported HEMTs with the same gate length. 相似文献
12.
G. B. Galiev M. M. Grekhov G. Kh. Kitaeva E. A. Klimov A. N. Klochkov O. S. Kolentsova V. V. Kornienko K. A. Kuznetsov P. P. Maltsev S. S. Pushkarev 《Semiconductors》2017,51(3):310-317
The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In0.53Ga0.47As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In0.53Ga0.47As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5. 相似文献
13.
Guan-Ru Chen Hao-Hsiung Lin Jyh-Shyang Wang Ding-Kang Shih 《Journal of Electronic Materials》2003,32(4):244-248
Optical properties of InAs1−xNx/In0.53Ga0.47As (hereafter, abbreviated as InAsN/InGaAs) single quantum wells (SQWs) grown on InP substrates by gas source molecular-beam
epitaxy are studied using photoluminescence (PL) measurements. By comparing the low-temperature PL spectra of InAs/InGaAs
and InAsN/InGaAs SQWs, InAs and InAsN phases are found to coexist in the InAsN layer. Such serious alloy inhomogeneities result
in obvious exciton localization by potential irregularities. The blue shift of the PL peak after rapid thermal annealing (RTA)
is found to originate mainly from As-N interdiffusion inside the well layer. According to the temperature-dependent PL results,
uniformity of the InAsN layer can be effectively improved by RTA, and the exciton localization is, thus, relieved. Comparison
of luminescence quenching and excitation-power-dependent PL behavior between the QWs with and without nitrogen content suggests
that the quality of the QW is degraded by the introduction of nitrogen, and the degradation can only be partially recovered
by post-growth RTA. 相似文献
14.
S. F. Yoon Y. B. Miao K. Radhakrishnan S. Swaminathan 《Journal of Electronic Materials》1996,25(9):1458-1462
Growth of In0.52Al0.48As epilayers on InP (100) substrates by molecular beam epitaxy at different silicon doping levels is carried out. The doped
samples show an inverted S-shaped dependence of the PL peak energy variation with the temperature which weakens at high doping
levels due to a possible reduction in the donor binding energy. There is a reduction in both the AlAs-like and InAs-like longitudinal-optic
(LO) phonon frequencies and a broadening of the LO phonon line shape as the doping level is increased. The PL intensity also
showed in increasing degrees at higher doping levels, a temperature dependence which is characteristic of disordered and amorphous
materials. 相似文献
15.
Shalini Lal Eric Snow Jing Lu Brian Swenson Stacia Keller Steven P. Denbaars Umesh K. Mishra 《Journal of Electronic Materials》2012,41(5):857-864
In this paper, we report the fabrication process and direct-current (DC) characteristics of a wafer-bonded heterostructure-based
vertical transistor. It comprises an In0.53Ga0.47As/In0.52Al0.48As/In0.53Ga0.47As field-effect transistor wafer-bonded to a Ga-polar In0.1Ga0.9N/GaN template. In the DC-bias operation of this device, the current conduction is initially confined lateral to the InGaAs
channel and then flows vertically through a conductive aperture defined in the InGaN/GaN layers. The narrow aperture is isolated
by ion-implanted current blocking layer (CBL) regions. The I
d–V
ds characteristics of the device demonstrate transistor-like behavior. Design optimizations have been applied to the implant
and doping conditions of the InGaN/GaN layers to eliminate the leakage paths through the CBL while simultaneously obtaining
unhindered current conduction through the aperture of the device. 相似文献
16.
P. M. Capani S. D. Mukherjee P. Zwicknagl J. D. Berry H. T. Griem G. W. Wicks L. Rathbun L. F. Eastman 《Journal of Electronic Materials》1986,15(3):185-191
Very low resistance alloyed NiGeAuAgAu ohmic contacts have been fabricated to the Al0.48In0.52As/Ga0.47In0.53As heterosystem. A thin capping layer of GalnAs was used to inhibit Al oxidation at the surface. Unlike NiGeAgAu ohmic metallization
containing ≈;25% Ag commonly used for contacting GaAs based semiconductors at Cornell, the Ag concentraiton was reduced to
≈;10%. AES/sputtering depth profiles indicated that this allowed controlled dissolution of the nonconducting AlInAs top layer
by the metallization which eventually interacted with the GalnAs without depleting it of In due to the strong Ag-In affinity.
The stoichiometry of the conducting GalnAs, in contact with the reacted metals, was thus maintained and this yielded specific
transfer resistances ≈;0.06 ohm · mm, the lowest to date. 相似文献
17.
E. K. Heller S. K. Islam G. Zhao F. C. Jain 《Journal of Infrared, Millimeter and Terahertz Waves》1998,19(8):1047-1058
A coupled-well InAlAs/InGaAs quantum wire MODFET structure is proposed, for which simulations predict improved frequency performance (>500 GHz), over a wider range of Vg, as compared to well/wire devices with a standard MODFET heterointerface. A comparison of several transverse potential well profiles, obtained by varying the placement of a thin barrier within a 100 Å finite well, is presented. In all cases, the quantum wires consist of a 0.1 μm long channel and a 150 Å finite-square-well lateral profile. It has been found that the peak of the electron distribution for the first confined state, as measured from the heterointerface, changes dramatically depending on the location of the thin barrier. For quantum wire structures, realized in the lattice matched system of In0.52Al0.48As/In0.53Ga0.47As/InP, a change in the barrier location of 25 Å is accompanied by a shift in the carrier peak of more than 40 Å (~20 Å closer to or farther from the spacer-well interface than in the standard MODFET profile). Implications of this are reflected in the current-voltage characteristics (Id-Vd) and frequency responses (fT-Vg) of the proposed structures. 相似文献
18.
In this paper, we report the effect of using a group-V residual source evacuation (RSE) time on the interfaces of InGaAs/lnGaAsP
quantum wells (QWs) grown by gas-source molecular beam epitaxy. High-resolution x-ray rocking curve and low-temperature photoluminescence
(PL) were used to characterize the material quality. By optimizing the RSE time, a PL line width at 15K as narrow as 6.6 meV
is observed from a 2 nm wide single QW, which is as good as or better than what has been reported for this material system.
Very sharp and distinct satellite peaks as well as Pendellosung fringes are observed in the x-ray rocking curves of InxGa1−xAs/InxGa1−xASyP1−y multiple QWs, indicating good crystalline quality, lateral uniformity, and vertical periodicity. Theoretical considerations
of the PL linewidths of InxGa1−xAs/InxGa1−xASyP1−y single QWs show that for QW structures grown with the optimized RSE time, the PL linewidth is mainly due to alloy scattering,
whereas the contribution from interface roughness is small, indicating a good interface control. 相似文献
19.
InP-based InGaAs/InAlAs ridge quantum wires were successfully fabricated by our new approach using selective molecular beam
epitaxy (MBE). As the starting structures, array of InGaAs ridge structures composed of smooth (311)A facets were formed by
MBE on mesa-patterned InP substrates. Prior to actual fabrication of the wires, MBE growth characteristics of In0.53Ga0.47As and In0.52Al0.48As layers on the starting structure were studied in detail. The results of growth experiments were then successfully applied
to the fabrication of InGaAs ridge quantum wires with high spatial uniformity. Low temperature cathodoluminescence spectrum
measured in response to spot excitation of wire region showed a strong light emission whose analysis indicated that it originates
from InGaAs ridge quantum wire itself. In photoluminescence measurements, the emission from the wire had strong intensity
even at room temperature, indicating that the wire crystal possesses excellent bulk and interface quality, and are largely
free from nonradiative recombination centers. 相似文献
20.
Zinc diffusion in InAsP/InGaAs heterostructures 总被引:1,自引:0,他引:1
Martin H. Ettenberg Michael J. Lange Alan R. Sugg Marshall J. Cohen Gregory H. Olsen 《Journal of Electronic Materials》1999,28(12):1433-1439
A systematic study of the sealed ampoule diffusion of zinc into epitaxially grown InP, In0.53Ga0.47As, In0.70Ga0.30As, In0.82Ga0.18As, and through the InAsP/InGaAs interface is presented. Diffusion depths were measured using cleave-and-stain techniques,
electrochemical profiling, and secondary ion mass spectroscopy. The diffusion coefficients,
, were derived. For InP, D0=4.82 × 10−2cm2/sec and Ea=1.63 eV and for In0.53Ga0.47As, D0=2.02 × 104cm2/sec and Ea=2.63 eV. Diffusion into the heteroepitaxial structures used in the fabrication of planar PIN photodiodes is dominated by
the effects of the InP/InGaAs interface. 相似文献