Pulsed-laser atom probe studies of a precipitation hardened maraging TRIP steel

A precipitation hardened maraging TRIP steel was analyzed using a pulsed laser atom probe. The laser pulse energy was varied from 0.3 to 1.9 nJ to study its effect on the measured chemical compositions and spatial resolution. Compositional analyses using proximity histograms did not show any significant variations in the average matrix and precipitate compositions. The only remarkable change in the atom probe data was a decrease in the ++/+ charge state ratios of the elements. The values of the evaporation field used for the reconstructions exhibit a linear dependence on the laser pulse energy. The adjustment of the evaporation fields used in the reconstructions for different laser pulse energies was based on the correlation of the obtained cluster shapes to the TEM observations. No influence of laser pulse energy on chemical composition of the precipitates and on the chemical sharpness of their interfaces was detected.     

Atomic scale investigation on the distribution of boron in medium carbon steels by atom probe tomography and EELS

The medium carbon (0.5 wt% C) steels containing various boron contents were studied to observe the distribution of boron using atom probe tomography and electron energy loss spectroscopy. APT revealed the segregation of boron atoms at retained austenite for 100 ppm boron added steels and the trapped carbon atoms at micro-twins for 50 ppm boron treated steels. Moreover, it was also found that boron was randomly distributed for 20 ppm boron added steels regardless of the interactions between carbon and boron.     

Quantitative comparison of energy-filtering transmission electron microscopy and atom probe tomography

Whereas transmission electron microscopy (TEM) is a well established method for the analysis of thin film structures down to the sub-nanometer scale, atom probe tomography (APT) is less known in the microscopy community. In the present work, local chemical analysis of sputtered Fe/Cr multilayer structures was performed with energy-filtering transmission electron microscopy (EFTEM) and APT. The single-layer thickness was varied from 1 to 6 nm in order to quantify spatial resolution and chemical sensitivity. While both the methods are able to resolve the layer structure, even at 2 nm thickness, it is demonstrated that the spatial resolution of the APT is about a factor of two, higher in comparison with the unprocessed EFTEM data. By calculating the influence of the instrumental parameters on EFTEM images of model structures, remaining interface roughness is indicated to be the most important factor that limits the practical resolution of analytical TEM.     

Effect of analysis direction on the measurement of interfacial mixing in thin metal layers with atom probe tomography

The accuracy and precision of thin-film interfacial mixing as measured with atom probe tomography (APT) are assessed by considering experimental and simulated field-evaporation of a Co/Cu/Co multilayer structure. Reconstructions were performed using constant shank angle and Z-scale reordering algorithms. Reconstruction of simulated data (zero intermixing) results in a 10-90% intermixing width of ∼0.2 nm while experiential intermixing (measured from multiple runs) was 0.47±0.19 and 0.49±0.10 nm for Co-on-Cu and Cu-on-Co interfaces, respectively. The experimental data were collected in analysis orientations both parallel and anti-parallel to film growth direction and the impact of this on the interfacial mixing measurements is discussed. It is proposed that the resolution of such APT measurements is limited by the combination of specimen shape and reconstruction algorithms rather than by an inherent instrumentation limit.     

Investigation of wüstite (Fe1-xO) by femtosecond laser assisted atom probe tomography

In this paper, we report results obtained from laser assisted three-dimensional (3-D) atom probe tomography (APT) on wüstite (Fe_1−xO). Oxides are generally insulating and hence hard to analyse in conventional electrical assisted APT. To overcome this problem, femtosecond laser pulses are used instead of voltage pulses. Here we discuss some aspects of pulsed laser field evaporation and optimization of parameters to achieve better chemical accuracy.     

Effect of laser pulsing on the composition measurement of an Al–Mg–Si–Cu alloy using three-dimensional atom probe

The effect of laser pulse energy on the composition measurement of an Al–Mg–Si–Cu alloy (AA6111) specimen has been investigated over a base temperature range of 20–80 K and a voltage range of 2.5–5 kV. Laser pulse energy must be sufficiently higher to achieve pulse-controlled field evaporation, which is at least 0.9 nJ with a beam spot size of about 5 μm, providing an equivalent voltage pulse fraction, ∼14% at 80 K for the alloy specimen. In contrast to the cluster composition, the measured specimen composition is sensitive to base temperature and laser energy changes. The exchange charge state under the influence of laser pulsing makes the detection of Si better at low base temperature, but detection of Cr and Mn is better at a higher temperature and using higher laser energy. No such effect occurs for detection of Mg and Cu under laser pulsing, although Mg concentration is sensitive to the analysis temperature under voltage pulsing. Mass resolution at full-width half-maximum is sensitive to local taper angle near the apex, but has little effect on composition measurement.     

Investigation of the analysis parameters and background subtraction for high-k materials with atom probe tomography

In this paper we present depth profiles of a high-k layer consisting of HfO₂ with an embedded sub-nm thick ZrO₂ layer obtained with atom probe tomography (APT). In order to determine suitable measurement parameters for reliable, reproducible, and quantitative analysis, we have investigated the influence of the laser energy and the specimen temperature on the resulting elemental composition. In addition we devise a procedure for local background subtraction both for the composition and the depth scale that is crucial for gaining reproducible results. We find that the composition of the high-k material remains unaffected even for extreme laser energies and base temperatures, while higher laser energies lead to an accumulation of silicon at the upper interface of the high-k layer. Furthermore we show that APT is capable of providing sub-nm depth resolution for high-k materials with high reproducibility, good compositional accuracy, and high measurement yield.     

Effects of laser pulsing on analysis of steels by atom probe tomography

When performing atom probe tomography analysis, laser pulsing was found very helpful for some types of steels, which are prone to premature sample failure under voltage pulsing. Rather accurate chemical compositions for both matrix and precipitates were obtained by voltage- and laser-pulsed mode. Some special issues on the effects of laser are discussed. A simple correction based on the ¹³Cⁿ⁺ and ¹⁰Bⁿ⁺ peak was used to quantify C in the carbide (M₂₃C₆, M=Fe, Cr, Mo) and B in the boride (M₃B₂, M=Mo, Fe, Cr, V). The mass resolution in laser mode is sufficient to resolve ⁵⁶Fe²⁺ and ¹⁴N₂¹⁺ at 28 Da. Small peak shifts were found in the spectrum due to reflectron aberrations.     

APT analyses of deuterium-loaded Fe/V multi-layered films

Interaction of hydrogen with metallic multi-layered thin films remains as a hot topic in recent days. Detailed knowledge on such chemically modulated systems is required if they are desired for application in hydrogen energy system as storage media. In this study, the deuterium concentration profile of Fe/V multi-layer was investigated by atom probe tomography (APT) at 60 and 30 K. It is firstly shown that deuterium-loaded sample can easily react with oxygen at the Pd capping layer on Fe/V and therefore, it is highly desired to avoid any oxygen exposure after D₂ loading before APT analysis. The analysis temperature also has an impact on D concentration profile. The result taken at 60 K shows clear traces of surface segregation of D atoms towards analysis surface. The observed diffusion profile of D allows us to estimate an apparent diffusion coefficient D. The calculated D at 60 K is in the order of 10⁻¹⁷ cm²/s, deviating 6 orders of magnitude from an extrapolated value. This was interpreted with alloying, D-trapping at defects and effects of the large extension to which the extrapolation was done. A D concentration profile taken at 30 K shows no segregation anymore and a homogeneous distribution at c_D=0.05(2) D/Me, which is in good accordance with that measured in the corresponding pressure–composition isotherm.     

Energy resolution of an Omega-type monochromator and imaging properties of the MANDOLINE filter

We report on the energy resolution properties of an Omega-type monochromator. In a TEM/STEM setup with a MANDOLINE filter and extreme stability of the high voltage and the filter current, an energy resolution of 43 meV for 0.1 s exposure time and 87 meV for 100 s exposure time was measured at 200 kV with 40 meV monochromator slit width. The monochromized zero-loss peaks are additionally characterized by their edge steepness. Moreover a drop in the monochromized zero-loss peak by 10³ after 260 meV can be obtained even without deconvolution. For small fields of view, the energy resolution mostly does not depend on the MANDOLINE filter. With the Corrected OMEGA filter an energy resolution of 41 meV was measured for 0.03 s exposure time at 200 kV with 30 meV monochromator slit width and 77 meV for 50 s exposure time at 80 kV with 40 meV monochromator slit width. Furthermore, the MANDOLINE filter’s setup and imaging properties are presented such as isochromaticity (<5 meV) and transmissivity (T_(1 eV)=17,400 nm²), which set a new standard for imaging energy filters and allow EFTEM spectrum imaging with energy windows ≤200 meV and reasonable fields of view.     

Influence of laser irradiation condition on a femtosecond laser-assisted tomographic atom probe

Influence of femtosecond laser pulse condition on the performance of an energy-compensated optical tomographic atom probe has been investigated. The unstable oscillator makes the mass peaks significantly broadened. Double 80 fs pulse train with 10 ns interval makes the mass peaks slightly shifted to the higher mass side. The mass peak shift corresponds to the fight time of ions triggered by laser pulsing. Chirping ratio for the laser pulses ranging from 80 fs to 10 ps is controlled by the pulse compressor for the fragile specimens such as oxide dispersion strengthen steel or insulator materials. A first-principle calculation for optical dielectric breakdown in diamond has been successfully demonstrated. It is shown that effective conductive increase has appeared at the laser intensity around 10¹³ W/cm².     

Atom probe tomography of Ni-base superalloys Allvac 718Plus and Alloy 718

Atom probe tomography (APT) allows near atomic scale compositional- and morphological studies of, e.g. matrix, precipitates and interfaces in a wide range of materials. In this work two Ni-base superalloys with similar compositions, Alloy 718 and its derivative Allvac 718Plus, are subject for investigation with special emphasis on the latter alloy. The structural and chemical nuances of these alloys are important for their properties. Of special interest are grain boundaries as their structure and chemistry are important for the materials' ability to resist rapid environmentally induced crack propagation. APT has proved to be suitable for analyses of these types of alloys using voltage pulsed APT. However, for investigations of specimens containing grain boundaries and other interfaces the risk for early specimen fracture is high. Analyses using laser pulsing impose lower electrical field on the specimen thereby significantly increasing the success rate of investigations. Here, the effect of laser pulsing was studied and the derived appropriate acquisition parameters were then applied for microstructural studies, from which initial results are shown. Furthermore, the influence of the higher evaporation field experienced by the hardening γ′ Ni₃(Al,Nb) precipitates on the obtained results is discussed.     

Laser assisted atom probe analysis of thin film on insulating substrate

We demonstrate that the atom probe analyses of metallic thin films on insulating substrates are possible using laser assisted field evaporation. The tips with metallic thin film and insulating substrate (0.6-3 μm in thickness) were prepared by the lift-out and annular ion beam milling techniques on tungsten supports. In spite of the existence of thick insulating layer between the metallic film and the tungsten support, atom probe tomography with practical mass resolution, signal-to-noise ratio and spatial resolution was found to be possible using laser assisted field evaporation.     

Probing non-dipole allowed excitations in highly correlated materials with nanoscale resolution

Here, we demonstrate that non-dipole allowed d–d excitations in NiO can be measured by electron energy loss spectroscopy (EELS) in transmission electron microscopes (TEM). Strong excitations from ³A_2g ground states to ³T_1g excited states are measured at 1.7 and 3 eV when transferred momentum are beyond 1.5 Å⁻¹. We show that these d–d excitations can be collected with a nanometrical resolution in a dedicated scanning transmission electron microscope (STEM) by setting a good compromise between the convergence angle of the electron probe and the collected transferred momentum. This work opens new possibilities for the study of strongly correlated materials on a nanoscale.     

Atom probe tomography analysis of nanostructure evolution in Ni-Cr-Mo low alloy steel under neutron irradiation

Ni-Cr-Mo low alloy steels are being considered as alternative materials to replace the Mn-Mo-Ni low alloy steels used in reactor pressure vessels in nuclear power plants, because of their higher strength and toughness. However, the neutron irradiation occurring during reactor operation causes degradation of Ni-Cr-Mo low alloy steel. In this study, irradiation-induced clusters in a Ni-Cr-Mo model alloy irradiated in the High-flux advanced neutron application reactor (HANARO) research reactor were investigated via Atom probe tomography (APT). The irradiated specimens showed irradiation-induced hardening and embrittlement. The neutron irradiation caused Si clustering, and these spherical clusters were homogeneously distributed within the matrix. Ni was also clustered at the Si clusters. However, the other elements did not clearly exhibit clustering behavior. Si and Ni atoms were also located at the dislocations. To quantify the nano-sized clusters, a method based on the Density-based spatial clustering of applications with noise (DBSCAN) algorithm was implemented. The total number of clusters was calculated to be ~7 × 10^-4 n/nm³ and the average cluster radius was less than 2 nm. The APT approach was demonstrated to be well suited for discovering the irradiation defect structures.     

A bi-material microcantilever temperature sensor based on optical readout

As one of the simplest MEMS sensors, microcantilever can sense temperature faster and more sensitively than traditional thermometers as its small size and low thermal mass. In this paper, an Au/SiNx bi-material microcantilever temperature sensor based on optical readout is presented. The deflection of the cantilever varies with the change of temperature due to the differences in thermal expansion coefficients between gold and silicon nitride. Then, the temperature could be accurately measured by detecting the deflection of the cantilever with optical lever method. By experiments, the theoretical model is verified and the temperature characteristics of the sensor are also determined. With a commercial microcantilever, the temperature resolution of the sensor is tested to be 0.02 K when 25 mm length of optical arm set. By optimizing the microcantilever parameters, the temperature resolution of the sensor could be 0.1 mK. High sensitivity makes it suitable for some special precise temperature measurements.     

Atom-probe for FinFET dopant characterization

With the continuous shrinking of transistors and advent of new transistor architectures to keep in pace with Moore's law and ITRS goals, there is a rising interest in multigate 3D-devices like FinFETs where the channel is surrounded by gates on multiple surfaces. The performance of these devices depends on the dimensions and the spatial distribution of dopants in source/drain regions of the device. As a result there is a need for new metrology approach/technique to characterize quantitatively the dopant distribution in these devices with nanometer precision in 3D.In recent years, atom probe tomography (APT) has shown its ability to analyze semiconductor and thin insulator materials effectively with sub-nm resolution in 3D. In this paper we will discuss the methodology used to study FinFET-based structures using APT. Whereas challenges and solutions for sample preparation linked to the limited fin dimensions already have been reported before, we report here an approach to prepare fin structures for APT, which based on their processing history (trenches filled with Si) are in principle invisible in FIB and SEM. Hence alternative solutions in locating and positioning them on the APT-tip are presented. We also report on the use of the atom probe results on FinFETs to understand the role of different dopant implantation angles (10° and 45°) when attempting conformal doping of FinFETs and provide a quantitative comparison with alternative approaches such as 1D secondary ion mass spectrometry (SIMS) and theoretical model values.     

Nanometer-resolution electron microscopy through micrometers-thick water layers

Scanning transmission electron microscopy (STEM) was used to image gold nanoparticles on top of and below saline water layers of several micrometers thickness. The smallest gold nanoparticles studied had diameters of 1.4 nm and were visible for a liquid thickness of up to 3.3 μm. The imaging of gold nanoparticles below several micrometers of liquid was limited by broadening of the electron probe caused by scattering of the electron beam in the liquid. The experimental data corresponded to analytical models of the resolution and of the electron probe broadening as function of the liquid thickness. The results were also compared with Monte Carlo simulations of the STEM imaging on modeled specimens of similar geometry and composition as used for the experiments. Applications of STEM imaging in liquid can be found in cell biology, e.g., to study tagged proteins in whole eukaryotic cells in liquid and in materials science to study the interaction of solid:liquid interfaces at the nanoscale.     

Optimization of pulsed laser atom probe (PLAP) for the analysis of nanocomposite Ti–Si–N films

Laser-assisted atom probe tomography was used to investigate the nanostructure and composition of high-performance, ultra-hard Ti–Si–N nanocomposite films. However, the quality of data is heavily dependent on analysis conditions. In order to obtain reliable data from these, and other ‘less conducting’ specimens, the analysis parameter space was thoroughly investigated to optimize the mass resolution and hit multiplicity obtained in atom probe tomography. Geometric factors including tip radius and shank angle were found to play a significant role in mass resolution but had no apparent effect on the number of multiple hits observed. Increased laser energy led to a gradual increase in the number of single hits, but a modest improvement in mass resolution. The influence of other instrumental factors including detection rate and base temperature was investigated separately. Preliminary PLAP results are presented, and correlated with TEM analysis of the microstructure of the film.     

A reproducible method for damage-free site-specific preparation of atom probe tips from interfaces

Atom probe tomography (APT) is a mass spectrometry method with atomic-scale spatial resolution that can be used for the investigation of a wide range of materials. The main limiting factor with respect to the type of problems that can be addressed is the small volume investigated and the randomness of common sample preparation methods. With existing site-specific specimen preparation methods it is still challenging to rapidly and reproducibly produce large numbers of successful samples from specifically selected grain boundaries or interfaces for systematic studies. A new method utilizing both focused ion beam (FIB) and transmission electron microscopy (TEM) is presented that can be used to reproducibly produce damage-free atom probe samples with features of interest at any desired orientation with an accuracy of better than 50 nm from samples that require very little prior preparation.