铝基板阳极氧化成膜温度与膜层结构

对铝基板在草酸体系下阳极氧化成膜温度进行了研究,发现膜的起始破坏温度为32.5℃,而与草酸电解液的浓度关系不大。通过XRD、SEM对膜层进行了分析,并测试了膜层的绝缘性能。结果表明:氧化膜层是以非晶态形式存在的,膜表面存在直径80nm左右的针状物,形成Al(OH)3水合物。较高溶液温度下,草酸的溶解作用加剧了膜层断面开裂、膜质疏松等缺陷,严重影响着膜层的绝缘性能,温度不超过32.5℃,能得到均匀、致密的膜层。     

不同沉积方式SiO2薄膜的自然时效特性

SiO2薄膜是光学薄膜领域内常用的重要低折射率材料之一。文中采用不同沉积技术在Si基底上制备了SiO2薄膜,并研究了它们光学特性的自然时效特性。采用不同贮存时间的椭偏光谱表征SiO2薄膜的光学特性,随着时间的增加,EB-SiO2薄膜和IAD-SiO2薄膜的物理厚度和光学厚度随着增加,但IBS-SiO2薄膜随着减小,变化率分别为1.0%,2.3%和-0.2%。当贮存时间达到120天时,IBS-SiO2薄膜、EB-SiO2薄膜和IAD-SiO2薄膜的物理厚度和光学厚度趋于稳定。实验结果表明,IBS-SiO2薄膜的光学特性稳定性最好,在最外层保护薄膜选择中,应尽可能选择离子束溅射技术沉积SiO2薄膜。     

硫化温度对Sn_xS_y薄膜光电性能的影响

用真空热蒸发技术在玻璃基片上沉积一层Sn薄膜,分别在硫化温度为210,240和270℃的条件下硫化45min。研究了硫化温度对薄膜样品光学和电学性能的影响。结果显示:随着硫化温度的升高,其电阻率减小;但薄膜导电类型不受硫化温度的影响,都为p型。当硫化温度为240℃时,薄膜为斜方SnS多晶薄膜,沿{111}方向优先生长,其均匀性和致密性以及对基片的附着力都较好,薄膜粒径为200～800nm,薄膜的直接能带间隙为1.46eV,电阻率为25.54Ω·cm。     

Effect of phosphotungstic acid on the properties of pulse deposited ZnSe films

ZnSe films were pulse electrodeposited on conducting glass substrates with and without the addition of phosphotungstic acid. X-ray diffraction studies indicated the formation of single-phase cubic ZnSe. The films possessed low dislocation density. Addition of phosphotungstic acid resulted in films with nanocrystallites. The band gap of the films were found to increase for the films deposited with phosphotungstic acid due to the quantum size effects. Thickness of the films was higher for the films deposited with phosphotungstic acid compared to those deposited without acid. The films had a crystallite size of the order of 15 nm and a surface roughness of 1.8 nm. The films were found to possess a slight excess of Se as evident from the EDAX measurements.     

基片温度对电子束蒸发的ZnS薄膜性能的影响

采用电子束蒸发在不同基片温度下沉积ZnS薄膜,研究了基片温度对薄膜性能的影响.结果表明:不同基片温度下沉积的ZnS薄膜均呈多晶状态,为体心立方(闪锌矿)结构的β-znS,并具有明显的(111)面择优取向,导电类型为n型.随着成膜时基片温度的提高,薄膜结晶度越来越好,透过率增大,载流子浓度增大,而电阻率减小.     

Ta2O5介质膜和Ta2O5—SiO双层介质膜绝缘特性的实验研究

本文介绍了采用直流磁控反应溅射沉积的Ta_2O_5介质膜及由用同样方法沉积的Ta_2O_5膜和电阻式蒸发沉积的SiO膜组成的双层介质膜的绝缘特性。     

PZT薄膜的制备及其与MEMS工艺的兼容性

用溶胶-凝胶技术在Pt/Ti/SiO2/Si上制备了PZT薄膜,并采用剥离技术与热处理的方法解决了Pt电极的图形化,在结晶热处理前,利用PZT腐蚀液对PZT进行图形化腐蚀.分别用SEM,XRD,EDX对电极和PZT薄膜的相貌、相结构以及化学组分进行了分析.结果表明:所制备的PZT薄膜具有完全的钙钛矿型结构;这种图形化的工艺方法大大改善了电极和PZT的图形化条件,在不影响电极和PZT性能的同时,提高了电极和PZT的图形质量;底电极和PZT的图形化过程,避免了强酸长时间的腐蚀,大大提高了PZT薄膜的制备与MEMS工艺的兼容性.     

镧钛酸铅铁电薄膜成膜机理探讨

采用快速热处理和传统热处理工艺对金属有机物热分解法制备的镧钛酸铅（ＰＬＴ）铁电薄膜进行了热处理，用扫描电镜对不同热处理工艺和不同厚度的ＰＬＴ薄膜的形貌进行了分析。结果表明，快速热处理工艺有利于活性高，较薄膜层的结晶和致密化反应；ＰＬＴ薄膜在传统和快速热处理过程中的形成过程与蒸发和溅射薄膜的核生长型薄膜的形成过程相似，薄膜的形成经历了岛状－网状－连续的过程，即随层数的增加，薄膜逐渐从不连续转变为连续，而热处理工艺只影响形成连续薄膜的厚度。     

激光辅助固态薄膜淀积技术的进展

本文综述了近年来激光辅助固态薄膜淀积技术的进展。简要概述了脉冲激光蒸发淀积(PLED)和激光诱导化学气相淀积(LCVD)的基本原理、淀积系统和激光器。侧重详细介绍了这种技术在制备微电子器件所需要的高Tc超导体膜、金属膜、半导体膜和介质膜中的应用。     

化学修饰溶胶-凝胶法制备功能薄膜微细图形

介绍了一种功能薄膜微细图形制备新方法—化学修饰溶胶-凝胶法。该方法的特点是在溶胶-凝胶制膜过程中引入化学修饰法,从而赋予薄膜以感光特性。利用该特性制备了微细图形,简化了工艺流程,并可以获得具有微米级的功能薄膜微细图形。概述了这种方法制备薄膜微细图形的原理、工艺流程以及主要影响因素,并对其在光波导薄膜、铁电薄膜和透明导电氧化物薄膜微细图形制备领域的研究情况进行了综合评述。最后对该方法的研究趋势进行了展望。     

退火温度对WO_3薄膜结构及气敏性能的影响

采用直流磁控溅射法制备了WO3薄膜,并在350~550℃时对薄膜进行退火处理,研究了退火温度对薄膜结构及气敏性能的影响。结果表明:退火前及350℃退火后的薄膜为非晶态,450℃和550℃退火后的薄膜为WO3–x型晶态;随退火温度的提高,薄膜厚度增加,晶粒度增大。550℃退火后薄膜的厚度,较450℃退火后薄膜厚30nm,晶粒度相差8nm;450℃和550℃退火后的薄膜,在150℃时对体积分数为0.05%的NO2的灵敏度接近于22。     

Photoelectric effects of nanostructured amorphous carbon films

In this work, the photoelectric properties of nanostructured amorphous hydrogenated carbon films was studied; these films are a variation of diamond-like carbon films. For this study, carbon films with different compositions were deposited and their electrical and optical proprieties were analyzed. These films were deposited by reactive magnetron sputtering using a pure graphite target and methane, nitrogen, carbon tetrafluorine and argon as processing gases. The amorphous carbon films are naturally nanostructured and show amount of optical proprieties as photoemission in the visible range and photoelectric effects. To enhance these effects in this work, the selective etching of the carbon films was promoted, and a nanopores and nanoholes was obtained. These defects show characteristics of potential gaps and modify the carbon films properties. Plasma etching performs the generation of the nanopores and nanoholes in the carbon films. The characteristics of these films were observed by photoluminescence analyze, optical absorbance, electro-optic analyzes. In this study, the development of the new structure for optical analyses of the nanoporous carbon films was necessary. For this, an auto-aligned test structure based in interdigital electrodes was developed.     

Effect of Duty Cycle on Properties of Pulse-electro-deposited SnS:Ag Thin Films

SnS∶Ag thin films were deposited on ITO glasses by pulse electro-deposition. By studying the effect of duty cycle on the properties of SnS∶Ag thin films, the optimum off-time(toff) is obtained to be 5 s, namely, the optimal duty cycle is about 67%. The primary phase of SnS∶Ag films deposited on optimum parameters condition is SnS compound with good crystallization, and the films prefer to grow towards (111) plane. The films are dense, smooth and uniform with good microstructure, and the grains in the films are densely packed together, and their direct bandgap is about 1.40 eV. In addition, the bandgap of the films first rises and then drops with the increase of the duty cycle.     

基片对SrTiO3薄膜结构与介电性能的影响

对比研究了MgO和LaAlO3(LAO)单晶基片上采用脉冲激光法生长的SrTiO3(STO)薄膜的微观结构和介电性能。通过XRD,AFM和制备叉指电容测量的方法研究发现,在MgO基片上生长高质量(00L)织构STO薄膜需要较高的生长温度;LAO基片上的STO薄膜更加平整;而MgO上的STO薄膜具有更高的零偏压介电常数和更强的非线性介电性质。     

拉伸工艺对PVDF薄膜形貌与结构的影响

聚偏二氟乙烯(PVDF)薄膜中,β相的相对含量对其压电、铁电性能起决定性作用。利用单轴拉伸工艺制备了高β相的相对含量的PVDF薄膜,运用XRD、SEM和FT-IR等测试手段,分析了拉伸过程中PVDF薄膜形貌与结构的变化,重点讨论了不同拉伸比R对薄膜微观结构及β相的相对含量的影响。结果表明:PVDF薄膜中的α晶相受均匀外力作用转变成β晶相,在80℃下拉伸5倍时,薄膜中β相的相对含量可高达77%。     

Y2O3:Eu电致发光膜的制备与结构表征

采用电子束蒸发和射频磁控溅射技术沉积了Y2 O3 :Eu电致发光薄膜 ,对膜进行了不同温度的大气热处理。用原子力显微镜 (AFM)观察了Y2 O3 :Eu膜的表面形貌 ,用X射线 (XRD)分析了Y2 O3 :Eu膜的结构 ,并对两种Y2 O3 :Eu膜的微结构和表面形貌进行了比较。结果表明 ,射频磁控溅射Y2 O3 :Eu膜与电子束蒸发Y2 O3 :Eu膜相比 ,结构更致密 ,表面更平滑 ,而且 ,在 90 0°C高温热处理后 ,溅射膜呈现单斜晶系结构 ,具有该结构的Y2 O3 :Eu膜适宜于作电致发光膜。     

Optically Transparent Antibacterial Films Capable of Healing Multiple Scratches

Optically transparent antibacterial films capable of healing scratches and restoring transparency are fabricated by exponential layer‐by‐layer assembly of branched polyethylenimine (bPEI)/poly(acrylic acid) (PAA) films and post‐diffusion of cetyltrimethylammonium bromide micelles encapsulated with antibacterial agent triclosan. The triclosan‐loaded bPEI/PAA transparent films can effectively inhibit the growth of gram‐positive and gram‐negative bacteria by the sustained release of triclosan molecules. Healing of multiple scratches on the triclosan‐loaded bPEI/PAA films can be conveniently achieved by immersing the films in water or spraying water on the damaged films, which also fully restores their transparency. The self‐healing ability of these transparent antibacterial films originates from the ability of bPEI and PAA to flow and recombine in the presence of water. The triclosan‐loaded bPEI/PAA films have satisfactory mechanical stability under ambient conditions, and thus show potential for application as transparent protective films with antibacterial properties.     

沉积温度对电子束蒸发沉积ZrO2薄膜性质的影响

摘要ZrO2薄膜样品在不同的沉积温度下用电子束蒸发的方法沉积而成。利用X射线衍射(XRD)仪和原子力显微镜(AFM)检测了ZrO2薄膜的晶体结构和表面形貌，发现室温下沉积ZrO2薄膜样品为非晶结构，随着沉积温度升高．ZrO2薄膜出现明显的结晶现象，在薄膜中同时存在四方相及单斜相。薄膜表现为自由取向生长，晶粒尺寸随沉积温度升高而增大。同时发现薄膜中的残余应力随沉积温度的升高，由张应力状态变为压应力状态，这一变化主要是薄膜结构变化引起的内应力的作用结果。同时讨论了不同沉积温度对ZrO2薄膜光学性质的影响。     

ULSI低介电常数材料制备中的CVD技术

综述了制备ULSI低介电常数材料的各种CVD技术。详细介绍了PCVD技术淀积含氟氧化硅薄膜、含氟无定型碳膜与聚酰亚胺类薄膜的工艺,简要介绍了APCVD技术淀积聚对二甲苯类有机薄膜及RTCVD技术淀积SiOF薄膜的工艺。     

F-DLC疏水性能的研究

用射频等离子体增强化学气相沉积(RF-PECVD)法沉积氟化类金刚石(F-DLC)薄膜。俄歇电子能谱分析表明,制备的碳膜为典型的类金刚石结构。接触角测量仪测量了沉积在玻璃基底上的F-DLC薄膜的接触角,采用傅里叶红外分析了薄膜价键结构,原子力显微镜分析了薄膜表面粗糙度;结果表明,氟的掺入稳定了弱极化基团CF2的含量,同时使得薄膜表面平整,薄膜与水的浸润性变差,改善了薄膜疏水性能。研究表明,流量比、沉积温度、退火温度、沉积功率对接触角的影响是先增后减,这主要是由于CF2含量和薄膜表面粗糙度的变化造成的。