Effects of Tb doping on structural and electrical properties of 47(Ba0.7Ca0.3)TiO3–0.53Ba(Zr0.2Ti0.8)O3 thin films at various annealing temperature by pulsed laser deposition

The ceramic thin films of 47(Ba_0.7Ca_0.3)TiO₃–0.53Ba(Zr_0.2Ti_0.8)O₃ (BCZT) + x (x = 0.2, 0.3, 0.4 and 0.5) mol% Tb were grown on Pt(111)/Si substrates with various annealing temperature by pulsed laser deposition. The XRD spectra confirm that Tb element can enhance the (l10) and (111) orientations in ceramic films. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) images show that Tb-doping can increase particle size effectively. The surface of Tb-doped film annealed at 800 ℃ is uniform and crack-free, and the average particle size and mean square roughness (RMS) are about 280 nm and 4.4 nm, respectively. Comparing with pure BCZT, the residual polarization (P_r) of 0.4 mol% Tb-doped film annealed at 800 ℃ increase from 3.6 to 9.8 μC/cm². Moreover, the leakage current density value of Tb doped films are one order of magnitude (5.33 × 10^?9?1.97 × 10^?8 A/cm² under 100 kV/cm) smaller than those of pure BCZT films (1.02 × 10^?7 A/cm²).     

Co2O3 substitution effects on the structure and microwave dielectric properties of low-firing (Zn0.9Mg0.1)TiO3 ceramics

Low-firing (Zn_0.9Mg_0.1)_1?xCo_xTiO₃ (x = 0.02–0.10) (ZMC_xT) microwave dielectric ceramics with high temperature stability were synthesized via conventional solid-state reaction. The influences of Co₂O₃ substitution on the phase composition, microstructure and microwave dielectric properties of ZMC_xT ceramics were discussed. Rietveld refinement results show the coexistence of ZnTiO₃ and ZnB₂O₄ phases at x = 0.02–0.10. (Zn_0.9Mg_0.1)_1?xCo_xTiO₃ ceramic with x = 0.06 (ZMC_0.06T) obtains the best combination microwave dielectric properties of: ε_r = 21.58, Q × f = 53,948 GHz, τ_f = ? 54.38 ppm/°C. For expanding its application in LTCC field, 3 wt% ZnO-B₂O₃-SiO₂ (ZBS) and 9 wt% TiO₂ was added into ZMC_0.06T ceramic, great microwave dielectric properties were achieved at 900 °C for 4 h: ε_r = 26.03, Q × f = 34,830 GHz, τ_f = ? 4 ppm/°C, making the composite ceramic a promising candidate for LTCC industry.     

Tetragonal Er3+-doped (K0.48Na0.48Li0.04)(Nb0.96Bi0.04)O3: Lead-free ferroelectric transparent ceramics with electrical and optical multifunctional performances

The lead-free Er³⁺-doped (K_0.48Na_0.48Li_0.04)(Nb_0.96Bi_0.04)O₃ (KNLNB-Er-x) ceramics were fabricated by conventional pressureless sintering. They possess a tetragonal perovskite phase with dense microstructure. High transmittances of the ceramics are obtained both in the visible and infrared regions. The optical band gap energies of them are 3.07–3.11 eV, close to other KNN-based materials. The relaxor-like characteristics, good dielectric, ferroelectric and piezoelectric properties of the ceramics have been obtained. The up-conversion photoluminescence spectra have been studied and obvious color-tunable emissions have been observed by modulating temperature. The fluorescence intensity ratio (FIR) value based on green emissions at 533 and 555 nm in the temperature ranging from 300 to 750 K have been investigated, giving the maximum sensitivity of ~ 0.0038 K^?1. Furthermore, the FIR technique opens up a method to detect the Curie temperature of the ceramics. Owing to both optical and electrical properties, the KNLNB-Er-x transparent ceramics could be a promising candidate in the application of color-tunable solid-state lightings, optical temperature sensors, and electrical-optical coupling devices.     

Enhanced dielectric and energy-storage properties in ZnO-doped 0.9(0.94Na0.5Bi0.5TiO3−0.06BaTiO3)−0.1NaNbO3 ceramics

[0.9(0.94Na_0.5Bi_0.5TiO₃?0.06BaTiO₃)?0.1NaNbO₃]-xZnO (NBT-BT-NN-xZnO, x=0, 0.5 wt%, 1.0 wt%, 1.5 wt%, and 2.0 wt%) ferroelectric ceramics were fabricated using a conventional solid-state reaction method. The effects of ZnO content on dielectric, energy-storage and discharge properties were systematically investigated. Dielectric constant and difference between maximum and remanent polarization were significantly improved by ZnO doping. Dielectric constant of NBT-BT-NN-1.0-wt% ZnO was 3218 at 1 kHz and room temperature, i.e. one time bigger than that of pure NBT-BT-NN ceramic. As a consequence, a maximum energy-storage density of 1.27 J/cm³ with a corresponding efficiency of 67% was obtained in NBT-BT-NN-1.0-wt% ZnO ceramic. Moreover, its pulsed discharge energy density was 1.17 J/cm³, and 90% of which could be released in less than 300 ns. Therefore, ZnO doped NBT-BT-NN ceramic with a large energy-storage density and short release time could be a potential candidate for applications in high energy-storage capacitors.     

Strong photoluminescence and piezoelectricity properties in Pr-doped Ba(Zr0.2Ti0.8)O3–(Ba0.7Ca0.3)TiO3 ceramics: Influence of concentration and microstructure

(Ba_0.85Ca_0.15)_1−xPr_x(Zr_0.1Ti_0.9)O₃ (where 0 < x < 0.01, abbreviated as BCZT:xPr) ceramics were fabricated by conventional solid-state reaction method. The influence of dopant concentration and microstructure on photoluminescence, ferroelectric, and piezoelectric properties was systematically investigated. The results showed that the photoluminescence spectra of the samples exhibited strong green (530 nm) and red (602 nm) emissions upon excitation of the 430 nm to 500 nm light, which couples well with to the emission band of the commercial blue light-emitting diodes chips. The emission intensities were strongly dependent on the dopant concentration and crystallite size, which reached the optimal value when the crystallite size and dopant concentration were 8 μm and 0.002 mol, respectively. Meanwhile, a large piezoelectric response with d₃₃ = 325 pC/N was obtained for BCZT:0.002Pr near the morphotropic phase boundary. Therefore, the Pr-doped BCZT materials, simultaneously exhibiting excellent luminescent properties and high piezoelectric properties, may have significant technological promise in novel multifunctional devices.     

Low-temperature-sintered Bi0.5Na0.5TiO3-based lead-free ferroelectric ceramics with good piezoelectric properties

Li₂CO₃ has been used as a sintering aid for fabricating lead-free ferroelectric ceramic 0.93(Bi_0.5Na_0.5TiO₃)-0.07BaTiO₃. A small amount (0.5 wt%) of it can effectively lower the sintering temperature of the ceramic from 1200 °C to 980 °C. Unlike other low temperature-sintered ferroelectric ceramics, the ceramic retains its good dielectric and piezoelectric properties, giving a high dielectric constant (1570), low dielectric loss (4.8%) and large piezoelectric coefficient (180 pC/N). The “depolarization” temperature is also increased to 100 °C and the thermal stability of piezoelectricity is improved. Our results reveal that oxygen vacancies generated from the diffusion of the sintering aid into the lattices are crucial for realizing the low temperature sintering. Owing to the low sintering temperature and good dielectric and piezoelectric properties, the ceramics, especially of multilayered structure, should have great potential for practical applications.     

A novel ((Bi0.5Na0.5)0.94Ba0.06)1-x (K0.5Nd0.5)xTiO3 lead-free relaxor ferroelectric ceramic with large electrostrains at wide temperature ranges

Novel ((Bi_0.5Na_0.5)_0.94Ba_0.06)_1-x(K_0.5Nd_0.5)_xTiO₃(x = 0.0, 0.02, 0.04, 0.06) lead-free ceramics (BNBT–xKN) were prepared by the solid-state reaction method. The effects of A-site (K_0.5Nd_0.5)²⁺ complex-ion substitution on their phase structure, dielectric, piezoelectric, and electromechanical properties were studied. The X-ray diffraction results indicate that all compositions are located in the morphotropic phase boundary (MPB) region where the tetragonal phase coexists with the rhombohedral phase. In addition, as the KN content increases, the ferroelectric order transform to relaxor order, which is characterized by a degeneration of maximum polarization, remnant polarization and correspondingly adjusts the ferroelectric-relaxor transformation temperature (T_F-R) to room temperature. Interestingly, the disruption of ferroelectric phase caused a significant improvement of strains. A maximum strain of ~ 0.52% corresponding to normalized strain of ~ 612 pm/V appeared at 85 kv/cm for the x = 0.04 composition. Particularly, the composition of x = 0.04 exhibited high electrostrains of temperature insensitivity, which remained above 0.4% and kept within 10% from ambient temperature up to 110 °C. It can be ascribed to the coexistence of non-ergodic and ergodic states in the relaxor region. As a result, the systematic investigations on the BNBT–xKN ceramics can benefit the developments of temperature-insensitive “on-off” actuators.     

Multiplicity of photoluminescence in Raman spectroscopy and defect chemistry of (Ba1−xRx)(Ti1−xHox)O3 (R = La,Pr, Nd,Sm) dielectric ceramics

(Ba_1?xR_x)(Ti_1?xHo_x)O₃ (R = La, Pr, Nd, Sm; x ≥ 0.04) (BRTH) ceramics were prepared using a mixed oxides method. The solubility limits in BRTH with R = La, Pr, Nd, Sm were determined by XRD to be x = 0.11, 0.12, 0.06, and 0.14, respectively. The ionic radius of R at Ti-site plays a decisive role in the solubility limit in BRTH. Only BRTH with R = La satisfied Vegard's law. The multiplicity of photoluminescence (PL) signals of Nd³⁺/Ho³⁺ and Sm³⁺/Ho³⁺ in Raman scattering under 532-nm excitation laser and the high-permittivity abnormality for the denser BRTH with R = Sm and at x = 0.07 were reported. The PL provided the evidence of a small number of Ho³⁺ at Ba-site in BRTH and it was determined that the number of Ba-site Ho³⁺ ions increased from 0.05 at% at R = La to 0.19 at% at R = Sm with increasing atomic number of light rare earth. BRTH exhibited a much broadened dielectric-temperature characteristics, marked by ×5 T, ×6 T, ×7 T, and ×8 S dielectric specifications for BRTH with R = La, Pr, Nd, Sm and at x = 0.06, respectively, and they exhibited lower dielectric loss (tan δ < 0.015) at room temperature. The dielectric-peak temperature (T_m) of BRTH decreased linearly at a rate of less than ?21 °C/%(R/Ho). The defect chemistry, solubility limit, lower dielectric loss, and dielectric abnormality are discussed.     

Low-temperature sintering of Ti1−xCux/3Nb2x/3O2 (x = 0.23) microwave dielectric ceramics with CuO and B2O3 addition

The influence of CuO and B₂O₃ addition on the sintering behavior, microstructure and microwave dielectric properties of Ti_1?xCu_x/3Nb_2x/3O₂ (TCN, x = 0.23) ceramic have been investigated. It was found that the addition of CuO and B₂O₃ successfully reduced the sintering temperature of TCN ceramics from 950 to 875 °C. X-ray diffraction studies showed that addition of CuO-B₂O₃ has no effect on the phase composition. The TCN ceramics with 0.5 wt% CuO-B₂O₃ addition showed a high dielectric constant of 95.63, τ_f value of + 329 ppm/°C and a good Q × f value of 8700 GHz after sintered at 875 °C for 5 h, cofirable with silver electrode.     

Synthesis and electrical properties of lead-free piezoelectric Bi0.5Na0.5TiO3 thin films prepared by Sol-Gel method

Lead-free Bi_0.5Na_0.5TiO₃ (BNT) piezoelectric thin films were deposited on Pt/TiO_x/SiO₂/Si substrates by Sol-Gel method. A dense and well crystallized thin film with a perovskite phase was obtained by annealing the film at 700 °C in a rapid thermal processing system. The relative dielectric constant and loss tangent at 12 kHz, of BNT thin film with 350 nm thickness, were 425 and 0.07, respectively. Ferroelectric hysteresis measurements indicated a remnant polarization value of 9 μC/cm² and a coercive field of 90 kV/cm. Piezoelectric measurements at the macroscopic level were also performed: a piezoelectric coefficient (d_33effmax) of 47 pm/V at E = 190 kV/cm was obtained. The piezoresponse force microscopy data confirmed that BNT thin films present ferroelectric and piezoelectric behavior at the nanoscale level.     

Giant electrocaloric effect of free-standing Pb0.85La0.1(Zr0.65Ti0.35)O3 thick films fabricated by the self-lift-off screen printing method

Free-standing Pb_0.85La_0.1(Zr_0.65Ti_0.35)O₃ (PLZT) ceramic thick films have been prepared via a facile and low-cost self-separating screen printing method for electrocaloric cooling, and the relation among the fabrication processes, phase composition, microstructure, dielectric characteristics, ferroelectric properties and electrocaloric effect (ECE) has been systematically investigated. Compared to the conventional ceramic thick films supported by substrates, the free-standing feature enables the EC cooling of the free-standing PLZT thick films to be fully used for cooling down different thermal loads rather than be futilely absorbed by the substrates. Furthermore, without the mechanical restriction of the substrates, the free-standing PLZT thick films can freely shrink during the high-temperature densification process, leading to their high density and favorable microstructures. Additionally, by introducing an adequate amount of excess PbO, the pyrochlore phase can be removed from the samples to yield high-purity perovskite PLZTs. With the comprehensive improvement in phase composition, microstructure and the elimination of mechanical strain between the active materials and substrates, the free-standing PLZT thick films exhibited an optimized ECE including changes of temperature and entropy of 1.95 °C and 2.09 J kg^?1 K^?1, which are almost 3 times that of the samples deposited on the Al₂O₃ substrates without excess PbO. This work would contribute to the development of ferroelectric ceramics, especially thick films, for practical EC cooling.     

Effects of lanthanides on structural and dielectric properties of NdNbO4-LnNbO4 ceramics

Recently, lanthanide niobates have attracted significant attentions in multi-functional materials. Herein a series of fergusonite structure-related (1-x)NdNbO₄-xLnNbO₄ (Ln = Yb, Er, Ho, Dy, Gd and Ce; 0.02 ≤ x ≤ 0.08) ceramics were prepared via conventional solid-state reaction method and the microwave dielectric properties were systematically discussed. The X-ray diffraction, Raman spectra were employed to investigate the crystal structure. Obtained results indicate that the ceramic samples present single monoclinic phase belong to the space group of I2/a. Microwave dielectric behaviors shown that the permittivity (ε_r) and the quality factor (Q × f) were influenced by the relative density, and the temperature coefficients of resonant frequency (τ_?) value kept the same variation tendency with the Nb-site bond valence. Furthermore, Far-IR and bond energy study evidenced the Ln-O oscillations dominated the main dielectric polarization and system stability. Good microwave dielectric properties, with ε_r ~ 20.88, Q × f ~ 66,510 GHz (at 8.60 GHz) and τ_f ~ ? 36.59 ppm/°C, were obtained in 0.94NdNbO₄–0.06YbNbO₄ ceramics when sintered at 1250 °C for 4 h. The (Nd_0.94Yb_0.06)NbO₄ might be potential candidate for the applications of modern microwave devices.     

Wetting of AgCu-Ti filler on porous Si3N4 ceramic and brazing of the ceramic to TiAl alloy

The effect of Ti content on the wettability of AgCu-Ti filler on porous Si₃N₄ ceramic was studied by the sessile drop method. AgCu-2 wt% Ti filler alloy showed a minimum contact angle of 14.6° on porous Si₃N₄ ceramic during the isothermal wetting process. The mechanism of AgCu-Ti filler wetting on porous Si₃N₄ ceramic is clarified in this paper. Porous Si₃N₄ ceramic was brazed to TiAl alloy using AgCu-xTi (x = 0, 2 wt%, 4 wt%, 6 wt%, 8 wt%) filler alloy at 880 °C for 10 min. The effect of Ti content on the interfacial microstructure and mechanical properties of porous-Si₃N₄/AgCu-xTi/TiAl joints are studied. The typical interfacial microstructure of p-Si₃N₄/AgCu-Ti/TiAl joint is p-Si₃N₄/penetration layer (Ag(s,s)+Si₃N₄+TiN+Ti₅Si₃)/Ag(s,s)+Cu(s,s)+TiCu/AlCu₂Ti/TiAl. The maximum shearing strength of the brazed joint was 14.17 MPa and fracture that occurred during the shearing test propagated in the porous Si₃N₄ ceramic substrate for the formation of the penetration layer.     

Temperature–stable dielectrics based on Cu–doped Bi2Mg2/3Nb4/3O7 pyrochlore ceramics for LTCC

Temperature–stable dielectrics based on Cu–doped Bi₂Mg_2/3Nb_4/3O₇ pyrochlore ceramics were prepared by conventional solid–state reaction. Microstructure analysis indicates that all of the specimen maintain the cubic pyrochlore phase, a fluorite–like phase of Bi₃NbO₇ and a Bi₅Nb₃O₁₅ formed for Cu doping. The dielectric constant is dominated by densification of samples and secondary phases, while the dielectric loss is related by the secondary phases, grain boundaries, and leakage current characteristics. The (1-x)BMN - xCuO(x = 0.1 mol%) ceramic sintered at 925 °C shows excellent dielectric properties with dielectric constant of ~184.06, dielectric loss of ~0.0017 and near zero τ_ε (?20 ppm/°C) is obtained at sintering temperature of 925 °C, which could be a promising candidate for LTCC.     

Effect of non-magnetic Al3+ doping on structural,optical, electrical,dielectric and magnetic properties of BiFeO3 ceramics

Pure BiFeO₃ (BFO) and Al doped BFO samples were synthesized via citrate precursor method and sintered at 500 °C for two hours. Effect of Al doping on the structural, optical, electrical, dielectric and magnetic properties were investigated. X-ray diffraction (XRD) confirmed the distorted rhombohedral structure without any merging of peaks which indicates no structural transformation. Average crystallite size was found to be in the range 28–39 nm. Field emission scanning electron microscopy (FESEM) images illustrated the dense, agglomerated, spherically shaped with reduced grain size nanoparticles. Increased value of dielectric constant with low dielectric tangent loss was observed for the Al doped BFO samples. The value of dielectric constant was found to be 51 at 100 kHz for x = 0.1 sample. Temperature dependent dielectric constant showed a dielectric anomaly, indicating the antiferromagnetic transition. The remanent polarization and the corresponding coercive field for x = 0.1 was found to be 0.0625 µC/cm² and 56.154 kV/cm at an operating voltage of 1000 V. The improved electrical properties with low leakage current density were ascribed to the stabilization of the pervoskite structure and reduced oxygen vacancies.     

Near room temperature giant negative and positive electrocaloric effects coexisting in lead–free BaZr0.2Ti0.8O3 relaxor ferroelectric films

BaZr_0.2Ti_0.8O₃ (BZT) relaxor ferroelectric (FE) films with tetragonal structure were deposited on Pt/TiO₂/SiO₂/Si(100) substrates via a sol-gel technique. A giant electrocaloric effect (ECE) was observed in the compact films with ΔT = 43.6 K and ΔS = 61.9 J/K kg at near room temperature of 366.5 K, which was attributed to the high breakdown electric field of E = 1010 kV/cm. Meanwhile, large negative ECE (ΔT = ? 5.2 K and ΔS = ? 8.8 J/K kg at room temperature of 305 K, ΔT = ? 5.1 K and ΔS = ? 7.2 J/K kg at near room temperature of 375 K) were achieved. The abnormal negative ECE is originated from structural transformation in relaxor ferroelectrics. The coexisting of giant negative and positive electrocaloric effects makes it more effective to realize the refrigeration during the application or removal of an electric field. The maximum electrocaloric coefficient (ζ_max = 0.043 K cm/kV) and refrigeration efficiency (COP = 35.18) of the films were obtained at near room temperature of 366.5 K. The giant electroelectric effect makes BZT films promising as lead-free materials for application in environment-friendly refrigeration equipment at near room temperature.     

Effects of TiO2 addition on dielectric and energy storage properties of BaO-K2O-Nb2O5-SiO2 glass ceramics

In this work, 25.6BaO-6.4K₂O-32Nb₂O₅-36SiO₂-xTiO₂ (0 ≤ x ≤10 mol%) (BKNST) glass ceramics were synthesized by conventional melts and controllable crystallization method. The effects of different TiO₂ addition on the phase composition, dielectric and energy storage properties of BKNS glass ceramics were systematically evaluated. With the TiO₂ concentration increasing, a growing content of Ba₂TiO₄ phase was observed in the glass ceramics. The microstructures appeared to be homogenous and uniform with very low porosity through the addition of TiO₂, for which the maximal breakdown strength of 2112 kV/cm and the corresponding energy storage density of 9.48 J/cm³ were obtained with x = 7.5. The extremely low dielectric loss of less than 1‰ (25 °C, 100 kHz) and the obviously improved microstructure contributed to the increased breakdown strength. In addition, the discharge power density of the glass-ceramic capacitor (x = 7.5) was investigated using the RLC charge-discharge circuit and a relatively high value of 16 MW/cm³ at 300 kV/cm was obtained.     

New LiCo0.5PrxFe2−xO4 nanoferrites: Prepared via low cost technique for high density storage application

Praseodymium substituted nano crystalline LiCo spinel ferrites with different concentrations were fabricated by micro-emulsion route. TGA, X-ray diffraction and magnetic properties was employed to study the effect of substitution of the Pr on the structure and magnetic parameters. XRD confirmed the formation of the single phase spinel ferrites with minor coexistence of orthophase. The particle size from XRD data was calculated in range from 53 nm to 106 nm. The VSM was employed for magnetic studies between ? 10,000 Oe and 10,000 Oe range. Considerable high value of ‘Hc’ coercivity (1581 Oe) and an enhanced value of ‘Ms’ saturation magnetization (51 emu/g) have been obtained as result of substitution. The value of Hc is high enough value but in soft ferrite range. Hence synthesized LiCo_0.5Pr_xFe_2?xO₄ ferrites are suitable for high density storage devices application.     

Investigation of optical,mechanical, and thermal properties of ZrO2-doped Y2O3 transparent ceramics fabricated by HIP

Highly transparent ZrO₂-doped Y₂O₃ ceramics were successfully synthesized using the hot isostatic pressing (HIP) process. The effects of the ZrO₂ content on the sintering behaviors, optical transmission spectra, Vickers hardness, grain size, size distribution, and Raman spectra were determined. The results indicated that decreased ZrO₂ content could promote increased transmittance, red-shifted infrared cutoff wavelength, increased thermal conductivity, decreased Vickers hardness, and increased lattice ordering. According to the optical transmission spectra, the optimized ZrO₂ content was 0.50 at%, at which point the ceramic exhibited a larger pre-sintering temperature range of 1650–1750 °C and the average grain size of 3.35 µm at 1750 °C. The grain size was significantly decreased at lower pre-sintering temperatures. Furthermore, a moderate Vickers hardness of 8.42 GPa and high thermal conductivity of 10.85 W/m K at room temperature were obtained for the optimized ceramic.     

Structural,dielectric and ferroelectric properties of lead-free Ba0.85Ca0.15Zr0.10Ti0.90O3 ceramics prepared by Plasma Activated Sintering

Lead-free Ba_0.85Ca_0.15Zr_0.10Ti_0.90O₃ (BCZT) ceramics were prepared by Plasma Activated Sintering (PAS). The influence of PAS sintering temperature on the crystalline phase, microstructure, and, dielectric and ferroelectric properties of BCZT ceramics were studied. The phase structure of BCZT ceramics first changed from rhombohedral phase to the coexistence of rhombohedral and tetragonal phases and then to tetragonal phase as the sintering temperature increased. Microstructural characterization of BCZT ceramics indicated that PAS can obtain a compact microstructure at lower temperatures of 1150–1300 °C compared with that from common pressureless sintering. The BCZT ceramics showed different degrees of diffuseness with increased temperature, and the diffuseness exponents C are all approximately on the order of 10⁵ °C. The dielectric and ferroelectric properties of BCZT ceramics were enhanced with increased sintering temperature. BCZT ceramics sintered at 1250 °C exhibited optimum properties of room-temperature ε_r=2863, ε_m=6650, and 2P_r=25.24 μC/cm², resulting from the relatively higher tetragonal phase content of the MPB between tetragonal and rhombohedral phases together with a compact microstructure.