CdS/CdSe量子点共敏化TiO_2薄膜的光电化学性能研究

采用化学浴沉积法分别将CdS、CdSe量子点沉积在TiO2纳米纤维薄膜上,得到TiO2/CdS/CdSe电极。采用电脉冲沉积法将非晶结构TiO2薄膜插入CdS与CdSe量子点之间,得到TiO2/CdS/a-TiO2/CdSe电极。将两种电极分别组装成太阳能电池,进行光电化学性质研究,结果表明,TiO2/CdS/a-TiO2/CdSe电池的光电转化效率比TiO2/CdS/CdS电池提高了1.68倍。进一步的原因分析结果表明,在CdS与CdSe量子点之间插入TiO2非晶薄膜后,可以极大提高载流子寿命。     

高致密度FeNi纳米颗粒薄膜制备与性能研究

传统磁控溅射装置制备的纳米颗粒薄膜粒径不均一并且实现粒径大小调控比较困难。本研究采用电场辅助沉积技术,在沉积平台施加5~30 kV的电场,以Si(100)为衬底制备了一系列纳米颗粒粒径均一的高致密度FeNi纳米颗粒薄膜材料。通过XRD、SEM以及VSM测量,研究了不同沉积电场下FeNi纳米颗粒薄膜的结构、形貌和磁性能。利用单端口短路微带线法对0.5~5.5 GHz范围内的微波磁谱进行表征。实验结果表明:沉积电场越大,纳米颗粒粒径均一且薄膜的致密度越高,越有利于薄膜综合磁性能的改善和饱和磁化强度增大。薄膜材料微波磁谱表明,电场辅助沉积技术制备的软磁薄膜材料能够在GHz频段得到广泛应用。     

掺In纳米ZnO、CdS薄膜结构、光学特性分析

采用真空气相沉积法在玻璃衬底上制备纳米级ZnO和CdS薄膜.研究掺In和热处理对ZnO、CdS薄膜结构、光学特性的影响.实验给出,适当掺杂能够明显改善纳米ZnO、CdS薄膜的物相结构,ZnO薄膜的晶粒尺寸随掺杂含量的增加而减小,CdS薄膜晶粒尺寸随掺杂含量的增加而变大,但薄膜的光透射性有所降低.在短波范围内,ZnO薄膜的光透率好于CdS薄膜;在500 nm～1000 nm范围内,CdS薄膜的光透率好.掺In后ZnO薄膜的光学带宽从3.2eV减小至2.85 eV;掺In后CdS薄膜光学带宽从2.42 eV减小至2.35eV.     

TiO_2纳米棒-ZnO纳米片分级结构的制备及光电性能

采用两步水热法在无种子层的基础上制备了新颖的TiO_2纳米棒-ZnO纳米片分级结构。采用旋涂辅助连续离子反应方法分别在TiO_2纳米棒阵列和TiO_2纳米棒-ZnO纳米片分级结构中沉积窄禁带半导体光敏剂CdS纳米晶,形成CdS/TiO_2纳米棒复合膜和CdS/TiO_2-ZnO分级纳米结构复合膜。利用SEM、TEM、XRD、紫外-可见吸收光谱、瞬态光电流图谱等分析手段对样品的形貌结构以及电极的光吸收和光电性能进行了表征和测试。结果表明,沉积光敏层CdS后,TiO2纳米棒-ZnO纳米片分级纳米结构膜的瞬态光电流明显高于TiO_2纳米棒阵列膜,尤其是在500nm处光电响应出现明显增强;以P3HT为p型聚合物材料组装杂化太阳电池,光伏性能测试结果表明,以P3HT/CdS/TiO_2-ZnO分级结构复合膜制备的杂化太阳电池能量转换效率可达0.65%,与P3HT/CdS/TiO2复合膜制备的杂化太阳电池的能量转换效率相比提高了58%。     

Ag纳米粒子在一维壳核式P3HT/CdS/TiO_2太阳电池中的应用

采用水热法在FTO导电玻璃上生长TiO_2纳米棒阵列膜,然后在CdCl_2和Na_2S水溶液中循环浸泡反应制备CdS/TiO_2壳核式纳米结构,利用电化学方法于光敏层CdS中引入了贵金属Ag纳米粒子,并将Ag纳米粒子沉积于两层CdS纳米晶壳层之间形成三明治结构,以避免Ag纳米颗粒直接暴露成为光生电荷的复合中心。在不同CdS/Ag/CdS光敏层厚度的TiO_2纳米阵列中旋涂P3HT薄膜组装杂化太阳电池,探索了Ag纳米粒子沉积量对电池光吸收性能及光伏性能的影响。结果表明,在光敏层中适量电沉积Ag纳米粒子电池光电转换效率可以达到0.13%,与没有贵金属沉积的电池结构相比可以提高28%。     

CdS量子点敏化TiO_2电极用于太阳能电池研究

采用光催化沉积的方法在TiO_2薄膜上沉积CdS量子点,TEM研究表明CdS量子点大小均一,直径为20nm左右。对CdS量子点制备过程进行了分析,发现生长原理为"原子原位生长过程"(Cd+S=CdS)。紫外-可见光测试结果表明CdS/TiO_2相对于TiO_2薄膜可以极大增强可见光的吸收率;将CdS/TiO_2组装成太阳能电池,电极表现出良好的光电性能,可以在太阳能电池等方面有很好的利用前景。     

镍铬合金薄膜的研究进展

镍铬合金薄膜是重要的精密电阻和应变电阻薄膜材料.简述了镍铬合金薄膜的3种制备方法:真空蒸发沉积、磁控溅射沉积和离子束沉积;讨论了基底、工作气压、沉积时间等薄膜制备工艺参数以及退火工艺对薄膜性能的影响.重点叙述了镍铬合金薄膜、改良型镍铬合金膜、含氮镍铬合金膜、镍铬合金多层膜和纳米镍铬合金薄膜等膜系的特征.阐明了制备具有高电阻率、低电阻温度系数、高应变灵敏系数、良好的热稳定性等优异综合性能的镍铬合金薄膜的新工艺发展趋势.     

电沉积技术在制备纳米薄膜方面的应用

综述了电沉积技术制备纳米薄膜的研究,介绍了电沉积技术制备纳米膜的基本工艺,讨论了电沉积技术制备纳米薄膜的原理、分类、应用情况,阐述了目前存在的问题,并对今后采用电沉积技术制备纳米薄膜的研究方向提出了一些建议。     

纳米Cu2O/TiO2 异质结薄膜电极的制备和表征

通过阴极还原在纳米TiO2膜上电沉积Cu2O，获得了p-Cu2O／n-TiO2异质结电极．研究了沉积温度对Cu2O膜厚、纯度和形貌的影响，制备出纯度较高、粒径为40-50nm的Cu2O薄膜．纳米Cu2O膜在200℃烧结后透光性最好，禁带宽度为2．06eV．光电化学测试表明纳米p-Cu2O／n-TiO2异质结电极呈现较强的n-型光电流响应并且能够提高光电转换效率．     

CdSZnO核壳纳米棒阵列结构的制备及在太阳能电池中的应用

采用水热法制备垂直于FTO导电玻璃基底的ZnO纳米棒阵列,然后通过电化学沉积法在ZnO纳米棒阵列上沉积CdS纳米晶,形成CdS/ZnO核壳纳米棒阵列结构。利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、X射线能谱仪(EDS)和紫外-可见分光光度计(UV-Vis)等对所得样品的形貌、结构组成进行分析表征;并以其为光电极组装太阳能电池,研究CdS纳米晶厚度对该电池光电性能的影响。结果表明,所得样品不仅拓宽和加强电池的光吸收能力,也有效调控光生载流子的传输。当CdS纳米晶沉积时间为60s时,电池的光电转换效率最高可达1.10%。     

Electrochemical bath deposition technique: Deposition of CdS thin films

Cadmium sulphide thin films have been deposited onto chromium plated stainless steel substrates under the influence of electric field. The various deposition parameters such as speed of rotation of the substrates, temperature of the chemical bath, molar concentrations of solution and the strength of the electric field were kept at optimized conditions. The electrochemical photovoltaic (ecpv) cells are formed with CdS film electrodes. The properties of CdS films andecpv cells are monitored with selective values of the electric field employed in the controlled precipitation technique. This relatively new technique is described and the possible film formation mechanism suggested.     

用单分子膜诱导化学沉积银膜

在气／液界面上形成硬脂酸单分子膜及硬脂酸／十八醇混合单分子膜，利用硬脂酸单分子的诱导作用，在硬脂酸单分子膜上化学沉积了金属银纳米膜，在硬脂酸／十八醇混合单分子膜上沉积了微观炙网状的银膜。采用SEM和TEM测试银膜的微观物理结构，并对膜的外观进行了表征，研究了不同亲水端基和沉积时间对银膜生长的影响，沉积时间控制在3h之间，可得到100nm以下厚度的银膜，采用界面双电层理论初步探讨了单分子膜上化学积银的生长机制，分析了多孔网状银膜的成因，认为界面双电层是银膜沉积的必要条件，提出了一种制备银膜的新方法，此法的优点在于能主动控制银膜表面微观结构。     

A three-dimensional electrode for photoelectrochemical cell: TiO2 coated ITO mesoporous film

In this letter, TiO₂ coated ITO mesoporous film was prepared by dipping doctor-blade ITO mesoporous film in TiO₂ sol, followed by sintering at 500 °C for 30 min. The CdS quantum dots (QDs) were deposited on TiO₂ coated ITO mesoporous film using sequential chemical bath deposition (S-CBD) method to form a three-dimensional (3D) electrode. The photo-activity of ITO mesoporous film/TiO₂/CdS electrode was investigated by forming a photoelectrochemical cell, which indicated that the ITO mesoporous film/TiO₂/CdS electrode was efficient in photoelectrochemical cell as a working electrode. The 3D electrode showed lower performance than the conventional electrode of TiO₂ mesoporous film/CdS, and more works are needed to improve the performance of 3D electrode.     

磁控溅射法制备的CdS:Al薄膜的性质研究

采用Al和CdS双靶共溅射的方法, 调控Al和CdS源的沉积速率, 制备出不同Al掺杂浓度的CdS:Al薄膜。通过XRD、SEM、AFM、紫外-可见透射光谱分析、常温霍尔测试对CdS: Al薄膜的结构、形貌、光学和电学性质进行表征。XRD结果表明, 不同Al掺杂浓度的CdS:Al薄膜均为六方纤锌矿结构的多晶薄膜, 并且在(002)方向择优生长。SEM和AFM结果表明, CdS:Al薄膜的表面均匀致密, 表面粗糙度随着Al掺杂浓度的增加略有增加。紫外-可见透射光谱分析表明, CdS:Al薄膜禁带宽度在2.42~2.46 eV 之间, 随着Al掺杂浓度的增加而略微减小。常温霍尔测试结果证明, 掺Al对CdS薄膜的电学性质影响显著, 掺Al原子浓度3.8%以上的CdS薄膜, 载流子浓度增加了3个数量级, 电阻率下降了3个数量级。掺Al后的CdS薄膜n型更强, 有利于与CdTe形成更强的内建场, 从而提高太阳电池效率。用溅射方法制备的CdS:Al薄膜的性质适合用作CdTe薄膜太阳电池的窗口层。     

ITO平面微电极上P(VDF-TrFE)薄膜的制备及性能表征

在ITO平面微电极上设计了P(VDF-TrFE)纳米级薄膜,以构建仅电场作用的模式,并避免其他因素的干扰。通过旋涂法制备了不同厚度的P(VDF-TrFE)薄膜,当厚度达到470nm时,薄膜具有足够的致密度和绝缘性,能隔绝电极上的微电流和可能产生的电化学产物。由于电极上覆有薄膜,在生物电刺激的应用中,还可消除电极材料不均匀对细胞行为的影响。采用覆有P(VDF-TrFE)薄膜的ITO平面微电极对间充质干细胞(MSCs)进行电场刺激,可以显著促进MSCs的增殖和成骨分化,其最佳刺激电压为250mV。这项工作为更充分地理解和发挥电刺激的生理医疗作用提供了新的思路和策略。     

化学水浴沉积时间对CdS薄膜性质的影响

采用CBD法在醋酸镉溶液体系中制备CdS半导体薄膜,通过XRD、XRF、SEM和光学透过率谱等测试手段研究了沉积时间对CdS薄膜沉积过程和性质的影响.结果表明,随着沉积时间的增加,薄膜增厚;S/Cd原子比增加,但都为富Cd的CdS薄膜;XRD研究表明,薄膜结构由立方、六方混合相向立方相转变,(111)方向成为择优生长方向;SEM研究表明,随沉积时间增加,薄膜变致密,薄膜表面出现的白色附着颗粒增多,尺寸增大;沉积时间对薄膜的光学性质也有很大的影响,随着沉积时间的增加薄膜透过率减小,而禁带宽度值增大.     

金属表面均三嗪二硫醇纳米聚合薄膜研究进展

综述了均三嗪二硫醇类化合物纳米聚合薄膜在各种金属基底表面的光聚合、热聚合、蒸发聚合及电化学聚合制备方法及在金属防护、材料间粘接、润滑特性、介电特性、超疏水和作为重金属离子处理剂等方面的应用。对该类化合物在不同金属表面的吸附作用和聚合机理进行了归纳、讨论与分析。提出了通过对该类三嗪二硫醇化合物分子进行改性研究,可在金属表...     

溅射环境下薄膜沉积速率的影响因素

基于溅射沉积和薄膜生长原理，系统综述分析电场环境、气氛环境和工件空间位置及旋转方式对薄膜沉积速率的客观影响规律，旨在为产业界和学术界生产、研发各种纳米薄膜提供经验支持与工艺指导。     

CdTe thin film solar cells with reduced CdS film thickness

A study was performed to reduce the CdS film thickness in CdTe thin film solar cells to minimize losses in quantum efficiency. Using close space sublimation deposition for CdS and CdTe a maximum efficiency of ~ 9.5% was obtained with the standard CdS film thickness of ~ 160 nm. Reduction of the film CdS thickness to less than 100 nm leads to poor cell performance with ~ 5% efficiency, mainly due to a lower open circuit voltage. An alternative approach has been tested to reduce the CdS film thickness (~ 80 nm) by depositing a CdS double layer. The first CdS layer was deposited at high substrate temperature in the range of 520-540 °C and the second CdS layer was deposited at low substrate temperature of ~ 250 °C. The cell prepared using a CdS double layer show better performance with cell efficiency over 10%. Quantum efficiency measurement confirmed that the improvement in the device performance is due to the reduction in CdS film thickness. The effect of double layer structure on cell performance is also observed with chemical bath deposited CdS using fluorine doped SnO₂ as substrate.     

Fabrication of an a-IGZO thin film transistor using selective deposition of cobalt by the self-assembly monolayer (SAM) process

Interest in transparent oxide thin film transistors utilizing ZnO material has been on the rise for many years. Recently, however, IGZO has begun to draw more attention due to its higher stability and superior electric field mobility when compared to ZnO. In this work, we address an improved method for patterning an a-IGZO film using the SAM process, which employs a cost-efficient micro-contact printing method instead of the conventional lithography process. After a-IGZO film deposition on the surface of a SiO2-layered Si wafer, the wafer was illuminated with UV light; sources and drains were then patterned using n-octadecyltrichlorosilane (OTS) molecules by a printing method. Due to the low surface energy of OTS, cobalt was selectively deposited on the OTS-free a-IGZO surface. The selective deposition of cobalt electrodes was successful, as confirmed by an optical microscope. The a-IZGO TFT fabricated using the SAM process exhibited good transistor performance: electric field mobility (micro(FE)), threshold voltage (V(th)), subthreshold slope (SS) and on/off ratio were 2.1 cm2/Vs, 2.4 V, 0.35 V/dec and 2.9 x 10(6), respectively.