A 12-Gb/s high-performance, high-sensitivity monolithic p-i-n/HBTphotoreceiver module for long-wavelength transmission systems

A very high sensitivity, high speed, fiber-pigtailed photoreceiver module is described. The OEIC photoreceiver, composed of a p-i-n photodetector monolithically integrated with an InP-InGaAs heterojunction bipolar transistor (HBT)-based transimpedance amplifier, has measured sensitivity of -20 dBm and -17.6 dBm for data rates of 10 and 12 Gb/s, respectively, at a bit error rate of 1×10^-9. These results are the best ever reported for an OEIC photoreceiver at these speeds. In an optical transmission experiment with a low noise erbium-doped fiber amplifier (EDFA) preceding the OEIC photoreceiver, the measured sensitivities were -35.2 and -32 dBm at 10 and 12 Gb/s respectively     

光收发器中光电集成接收芯片的实现

针对应用于850nm光通信中的10/100Mbit/s收发器,提出采用0.5μm标准CMOS工艺对其光接收芯片实现Si基单片集成。整体芯片面积为0.6mm2,共集成了一个双光电二极管的(DPD)光电探测器和一个跨阻前置放大电路,功耗为100mW,并给出了具体的测试性能结果。结果表明,在850nm光照下,光接收芯片带宽达到53MHz,工作速率为72Mbit/s。重点介绍了DPD光电探测器的原理和结构,并给出了相应的制造过程和电路等效模型,对整个光接收芯片进行了多种实用性测试,可以满足系统的性能要求。     

A complete 400-Mb/s burst-mode data OEIC receiver

A fully integrated burst-mode GaAs MESFET optoelectronic integrated circuit (OEIC) receiver, 215 mil×109 mil, that has been designed and implemented for point-to-point data links for application as a phased-array antenna controller is described. The chip provides a low-cost means for passing 400-Mb/s antenna control information using fiber optics with a very low bit-error rate (BER). Approximately 350 source-coupled FET logic gates are present on the chip. A new data coding and timing recovery scheme that is highly tolerant to jitter over a wide bandwidth has been developed. The OEIC uses an on-chip metal-semiconductor-metal (MSM) photodiode with 0.12-A/W responsivity measured at 780 nm and was fabricated in a 1.0-mm GaAs MESFET manufacturing technology. The low capacitance semi-insulating GaAs substrate minimizes the coupling between analog and digital circuitry. The circuit operates from a single 5-V supply, consumes 1 W of power, and provides an 8-b CMOS output bus together with various utility flags. Optical sensitivity is estimated at -20 dBm for 10^-14 BER     

High-sensitivity BiCMOS OEIC for optical storage systems

A new BiCMOS optoelectronic integrated circuit (OEIC) for applications in advanced optical storage systems is presented. It is optimized with respect to high sensitivity and high speed. The photodiode and the amplifier are monolithically integrated on the same substrate in a commercial 0.8-/spl mu/m BiCMOS process. Analytical expressions for the compensation capacitors and for the bandwidth of the OEIC are derived. Neglecting antireflection coating, no process modifications are necessary to produce the integrated photodiodes. A new offset compensation scheme is implemented in the amplifiers to allow for a small chip area and low power consumption. The OEIC shows a sensitivity of 43.3 mV//spl mu/W in combination with a -3-dB bandwidth of 60.2 MHz.     

A 5-Gb/s OEIC with voltage-up-converter

In this paper (based on our previous paper at ESSCIRC 2004, "A 2.4 GHz-Bandwidth OEIC with Voltage-Up-Converter," but new results for 4 Gb/s and 5 Gb/s have been added), an optoelectronic integrated circuit (OEIC) with an integrated voltage-up-converter (VUC) to enhance the frequency response of an integrated pin photodiode is presented. With the VUC a voltage of 11 V is generated on the chip without any additional external components. Thus, for a single-supply environment of 5 V the bandwidth of the OEIC is increased from 1.5 to 2.4 GHz. For data rates of 1, 3, 4, and 5 Gb/s at a bit error rate of 10/sup -9/, sensitivities of -29.3, -24.3, -22.9, and -20.5 dBm, respectively, were measured at a wavelength of 660 nm. For the implementation of the OEIC a modified 0.6-/spl mu/m silicon BiCMOS technology with f/sub T/=25 GHz is used.     

11 GHz bandwidth optical integrated receivers using GaAs MESFET andMSM technology

State-of-the-art performance of GaAs-FET-based monolithic optoelectronic integrated circuit (OEIC) receivers is reported. The OEIC receiver achieves -3-dB bandwidth as high as 11 GHz for optical signals at a wavelength of 850 nm. The feedback resistance of the receiver is 1000 Ω and the effective transimpedance into a 50 Ω load is 565 Ω. The effective transimpedance-bandwidth (TZBW) product is 6.1 THz-Ω. This ultra-high-performance receiver was implemented via a high-yield, low-cost direct ion implanted GaAs MESFET technology with a 0.6-μm gate length and a metal-semiconductor-metal (MSM) detector with 2-μm lines×3-μm spacings     

Design, modeling, and characterization of monolithically integratedInP-based (1.55 μm) high-speed (24 Gb/s) p-i-n/HBT front-endphotoreceivers

High-speed, long-wavelength InAlAs/InGaAs OEIC photoreceivers based on a p-i-n/HBT shared layer integration scheme have been designed, fabricated and characterized. The p-i-n photodiodes, formed with the 6000 Å-thick InGaAs precollector layer of the HBT as the absorbing layer, exhibited a responsivity of ~0.4 A/W and a -3 dB optical bandwidth larger than 20 GHz at λ=1.55 μm. The fabricated three-stage transimpedance amplifier with a feedback resistor of 550 Ω demonstrated a transimpedance gain of 46 dBΩ and a -3 dB bandwidth of 20 GHz. The monolithically integrated photoreceiver with a 83 μm p-i-n photodiode consumed a small dc power of 35 mW and demonstrated a measured -3 dB optical bandwidth of 19.5 GHz, which is the highest reported to date for an InAlAs/InGaAs integrated front-end photoreceiver. The OEIC photoreceiver also has a measured input optical dynamic range of 20 dB. The performance of individual devices and integrated circuits was also investigated through detailed CAD-based analysis and characterization. Transient simulations, based on a HSPICE circuit model and previous measurements of eye diagrams for a NRZ 2³¹-1 pseudorandom binary sequence (PRBS), show that the OEIC photoreceiver is capable of operation up to 24 Gb/s     

Multigigabit/s 1.5 μm λ/4-shifted DFB OEIC transmitterand its use in transmission experiments

Optoelectronic integrated circuit (OEIC) transmitters consisting of 1.5 μm λ/4-shifted distributed feedback (DFB) lasers and InGaAs-InAlAs MODFETs were fabricated for the first time. The entire processing requires only two organometallic vapor-phase epitaxy (OMVPE) growths, with the potential for high yield and low cost. Direct modulation of the OEIC transmitter is demonstrated for bit rates up to 10 Gb/s. A transmission experiment using the OEIC transmitter and a hybrid p-i-n/HEMT receiver is conducted at 5 Gb/s, with a sensitivity of -20 dBm and a bit-rate-distance product of 145 Gb/s-km     

A high speed burst mode optoelectronic integrated circuitphotoreceiver using InP/InGaAs HBT's

A novel monolithic differential photoreceiver has been realized using InP/InGaAs heterojunction bipolar transistors. This dc-coupled differential OEIC operated successfully with both continuous and burst-mode data streams up to 5 Gb/s with a sensitivity of -18.6 dBm for the continuous mode operation at a bit error rate of 10^-9. There was a 1.5 dB penalty of the sensitivity value in burst-mode operation. This is the first demonstration of an OEIC for burst-mode operation at high speeds     

Monolithic integration of GaAs MESFET and InP/InGaAsP 2*2 optical switch

An optical switching OEIC (optoelectronic integrated circuit), consisting of a GaAs MESFET and an InP/InGaAsP 2*2 buried waveguide optical switch, is reported for the first time. Fully monolithic integration is obtained by heteroepitaxial GaAs-on-InP growth and photolithographical interconnection. The combined OEIC allows switching voltages of about 1 V with an extinction ratio of -6 dB.<>     

OEICs for WDM transceiver modules fabricated by reactive ion etching on semi-insulating substrates

The design and fabrication of OEICs on semi-insulating InP substrates comprising 1300 nm DFB lasers, 1300/1530 nm wavelength duplexers and monitor photodiodes is described. OEIC lasing thresholds were as low as 20 mA. The through-state crosstalk for the integrated duplexer was typically -12 dB. Linear tracking of the laser output by the monitor photodiode was achieved with sensitivities in the region of 70 mu A/mW. The OEICs operated successfully in a 622 Mbit/s bidirectional optical link.<>     

高灵敏度CMOS光电集成接收机设计

设计了一个由调节型级联跨阻抗放大器(TIA)和双光电二极管(DPD)构成的CMOS光电集成(OEIC)接收机.具体分析了这个光电集成接收机的噪声和灵敏度及其相互关系.接收机中的噪声主要是电路中电阻的热噪声和MOS器件的闪烁噪声.提出了优化接收机灵敏度的方法.通过低成本的CSMC 0.6μm CMOS工艺流片并对芯片进行了测试.从测试眼图可知,该CMOS光电集成接收机可工作在1.25GB/s的传输速率下,灵敏度为-12dBm.     

A 622 Mb/s high-sensitivity monolithic InGaAs-InP pin-FET receiver OEIC employing a cascode preamplifier

A long-wavelength monolithically integrated receiver optoelectronic integrated circuit (OEIC) comprising a low input-capacitance cascode transimpedance preamplifier and a p-i-n photodiode has been demonstrated. The OEIC is fabricated using metal-organic vapor phase epitaxy (MOVPE) grown epilayers and the beryllium ion-implantation technique. The receiver exhibits a sensitivity of -34.7 dBm at 622 Mb/s for BER-10/sup -9/. Using a cascode preamplifier reduces an input capacitance to about one-half of that of an inverter type, which results in the use of a larger feedback resistance of 16 k Omega . The combination of low input capacitance and large feedback resistance reduces the noise current of the receiver and results in high sensitivity.<>     

An optically clocked transistor array with dual serial-to-parallel and parallel-to-serial conversion capability for optical label swapping

We propose an optically clocked transistor array optoelectronic integrated circuit (OEIC) for both serial-to-parallel and parallel-to-serial conversion (demux/mux), enabling an interface between high-speed asynchronous burst optical labels and CMOS circuitry for optical label swapping. Dual functionality of the OEIC reduces size, power, and cost of the optical label swapper. The capability for greater than 20-Gb/s conversion operation is demonstrated.     

Investigation Into the Integration of a Resonant Tunnelling Diode and an Optical Communications Laser: Model and Experiment

A resonant tunnelling diode has been monolithically integrated with an optical communications laser [the resonant tunnelling diode (RTD-LD)] to form a simple optoelectronic integrated circuit (OEIC) that is a novel bistable device suitable for an optical communications system. The RTD-LD was based on a ridge-waveguide laser structure and was fabricated from an InAlGaAs-InP epi-wafer grown by molecular beam epitaxy; it emitted at around 1500 nm. Voltage controlled optical-electrical switching and bistability were observed during the characterisation of the RTD-LD - useful features for a fibre-optic communications laser. Optical and electrical simulations of the RTD-LD were carried out using the circuit simulation tool PSPICE. In addition, a discrete component version of the RTD-LD was constructed which exhibited optical power oscillations, and along with the results of the simulations, gave insight into the operating principles of the monolithically integrated RTD-LD.     

Monolithic balanced p-i-n/HBT photoreceiver for coherent optical heterodyne communications

Two InGaAs p-i-n photodetectors connected in a balanced configuration have been monolithically integrated with a transimpedance preamplifier made from InP-InGaAs heterojunction bipolar transistors (HBTs) to realize a balanced optoelectronic integrated circuit (OEIC) receiver. The receiver, with a bandwidth of 3 GHz and a common mode rejection of 25 dB, has a sensitivity of -49 dBm at a bit error rate of 10/sup 9/ under NRZ FSK reception at 200 Mb/s.<>     

Balanced operation of a GaInAs/GaInAsP multiple-quantum-wellintegrated heterodyne receiver

The balanced operation of a multiple-quantum-well balanced heterodyne receiver photonic integrated circuit (PIC) is described. Using only SMA-connected 50 Ω commercial electronics, a free-space beam sensitivity of -42.3 dBm at 108 Mb/s and -39.7 dBm at 200 Mb/s for NRZ FSK (frequency-shift keying) reception has been achieved. This represents a 14 dB improvement over any previous heterodyne receiver PIC sensitivity. In addition to providing the multichannel benefits of heterodyne reception, this is also the highest sensitivity yet reported for any OEIC (optoelectronic integrated circuit) receiver     

A metal-amorphous silicon-germanium alloy Schottky barrier forinfrared optoelectronic IC on glass substrate application

The effects of material and structure parameters on an amorphous-silicon-germanium alloy Schottky barrier diode's responsivity have been investigated in detail. The effects contradict each other. A compromise is made in selecting parameters for construction of a Si_1-xGe_x:H Schottky barrier for an IR detector. The optimized amorphous-silicon-germanium alloy Schottky diode using x=0.43 alloy with a 900-nm-thick i-layer was found to have a peak at 850 nm with a responsivity of 0.6 A/W under -2-V bias. The diode also has a response time of 33 μs and slight photodegradation. Thus, the diode becomes a candidate for manufacturing the infrared OEIC (optoelectronic integrated circuit) on glass substrate in applications which require size, reproducibility, and low cost more than sensitivity     

CMOS photodiode with enhanced responsivity for the UV/blue spectralrange

A new photodiode for the UV/blue spectral range, which can be integrated monolithically with CMOS circuits, is presented. Such optoelectronic integrated circuits (OEICs) with a high sensitivity in the UV/blue spectral range are needed in near-future optical storage systems like digital versatile disk (DVD) or digital video recording (DVR). At 400 nm, our so-called finger photodiode achieves a responsivity of 0.23 A/W corresponding to a quantum efficiency η of 70% [with an antireflection coating (ARC)] and rise and fall times of 1.0 ns and 1.1 ns, respectively. The finger photodiode can be used in the red spectral range, too. At 638 nm, the responsivity is 0.49 A/W (η=95%) and rise and fall times of less than 2.3 ns are achieved. For the integration of the finger photodiode in an industrial 1 μm twin-well CMOS process, only one additional mask is needed in order to block out the threshold voltage implantation in the photo-active region     

All-optical clock recovery from 2.5 Gbit/s NRZ data using selfpulsating 1.58 mu m laser diode

For the first time, all-optical clock extraction from 2.5 Gbit/s NRZ data is demonstrated using a two contact InGaAsP semiconductor selfpulsating laser diode (SP-LD) for what the authors believe to be the first time. The saturable absorber region of the device was doped with Zn ions to reduce the carrier lifetime such that strong selfpulsations at frequencies up to 4 GHz were obtained. Injection of a 10 mu W optical data signal at a wavelength approximately 15 nm lower than the lasing wavelength was sufficient to synchronise the selfpulsations to the incoming NRZ data stream. Similar effects were seen for RZ formated data. Such all-optical clock extraction techniques will find application in future multigigabit per second optical networks and for OEIC applications.<>