多层介质中多导体拐角结构电容参数的提取

本文给出一种计算多层介质中多导体拐角互连结构的准静态电容参数的快速算法─—维数缩减技术（DRT），并和有限差分法相结合，快速、准确地提取了多层介质中多导体拐角结构的准静态电容矩阵。由于维数缩减技术能充分利用集成电路结构分层的特点，从而大大减少了计算所需的时间和存储空间。文中给出的计算结果与Ansoft软件的计算结果吻合得较好，而计算所需的时间和存储空间大大少于Ansoft软件。     

Capacitance extraction for electrostatic multiconductor problems byon-surface MEI

In this paper, on-surface measured equation of invariance (OSMEI) method is implemented for capacitance extraction of electrostatic multiconductor interconnect problems. OSMEI uses the same mesh as that in method of moments (MoM), but generates highly sparse matrices rather than a full matrix. In comparison with “standard” MEI which contains a few finite difference (FD) or finite element (FE) mesh layers, the number of unknowns and the computation memory can be saved. For each OSMEI equation in the multiconductor interconnects, a given node on a given conductor is forced into coupling with the few adjacent nodes on conductor itself and the few sampled nodes on other conductors. Thus, the system sparse matrices can be generated. The convergent behavior of the capacitance with the number of the nodes in the OSMEI equations has been widely investigated, Numerical examples of the capacitance extraction for two-dimensional (2-D) and three-dimensional (3-D) multiconductor interconnects show that the computing errors are within 24%. The OSMEI method may become a powerful technique for the more complex interconnect problems     

广义电容矩阵及其应用：梳状及交指滤波器的精确设计

本文提出一种广义电容矩阵的方法，用以优化设计ＴＥＭ传输线梳状及交指滤波器。     

电介质为各向异性的电容新公式

本文应用位移电流,导出了用张量介电常数的逆矩阵元素和广义正交坐标表示的各向异性的电容特性公式,从而提供计算电容的一种新的简便方法。文中以实例对本文导出的新公式进行了验证。     

小波多分辨率分析改进互连结构电容提取

本文将点匹配矢量法矩阵视作类似离散图像信号的一组数字信号矢量,进行小波多分辨率分解对该矩阵进行拟对角化压缩,克服了以往小小基直接展开的矩量法在求解二维与三维电在问题时的困难。文章例子的计算结果说明了这种方法在将矩量法得到的满矩阵变换为稀疏矩阵时具有的效率。电容参数提取的效率也由于矩阵的稀疏化得到了提高。文中的数据值结果与文献及ＦＡＳＴＣＡＰ软件的结果吻合。     

A SET OF NEW FORMULAE OF CAPACITANCE OF A CAPACITOR WITH NONLINEAR ANISOTROPIC OR ISOTROPIC DIELECTRICS

The new and general formulae of capacitance of a capacitor with nonlinear anisotropic orisotropic dielectrics shown by generalized orthogonal coordinates and inverse matrix of dielectric constantare derived by use of the displacement current.It provides a new and simple method for computingcapacitance of a capacitor.The formulae have been checked by several examples.     

Theoretical and Practical Applications of Capacitance Matrix Transformations to TEM Network Design

TEM propagation on an array of parallel conductors is described in terms of the normalized static capacitance matrix. Important properties of capacitance matrices are discussed and a physical and network interpretation is given to a useful linear transformation of the static capacitance matrix. Several practical applications of capacitance matrix transformations are given. These include 1) equivalent circuits for directional couplers with equal terminations, 2) design procedures for directional couplers with unequal terminations, and 3) element value tables and design details for compact coaxial filter-transformers. Construction details and experimental results are presented for a 3:1 bandwidth filter-transformer constructed with multiple re-entrant coaxial lines.     

Capacitance calculations for cable harnesses using the method ofmoments

A method of moments procedure to obtain the capacitance matrix for a cable harness is presented. The geometry consists of multiple, parallel, insulated wires, possibly above a ground plane. The method uses Fourier harmonic expansion functions for the total charge and Galerkin testing functions. The capacitance matrix is obtained by the relationship of free charge to potential. Computed and experimental results are presented and compared to exact analytical solutions when possible     

An efficient method for computing the capacitance matrix ofmulticonductor interconnects in very high-speed integrated circuitsystems

A new method for computing the capacitance matrix of multiconductor interconnects with finite metallization thickness is developed. Converting the vertical wall of the rectangular conductors into the equivalent horizontal strips allows the Green's function in the spectral domain and the FFT algorithm to be used, which makes the method more effective for computing capacitance matrix of the interconnects     

计算开路器边缘电容的简单方法

本文介绍了开路器数学模型的建立和定义，对开路器数学模型中的边缘电容和延迟的计算和描述进行了研究，重点介绍了一种计算开路器边缘电容的简单方法，最后以3.5mm同轴开路器为例验证了此方法。     

射频E类功率放大器并联电容技术研究

为了使E类放大器工作效率最大,需要得到并联电容的确切数值.分析了含线性并联电容E类放大器的和含非线性晶体管寄生输出电容E类放大器的不同特性,给出了不同的设计方法.指出了E类功率放大器设计过程中分析和计算并联电容的难点,阐述了E类功率放大器中并联电容对电路性能的影响,同时给出了考虑并联电容的E类功率放大器的设计方法.     

形状接近圆盘的薄导体电极电容的计算

本文利用等值电容方法并借助泰勒级数展开式研究了形状接近圆盘的薄导体电极民容的简便近似计算，并以实例说明了用这一方法所给出的精度。     

多层介质多导体系统电磁参量的一种有效解法

本文提出了一种计算多层介质多导体传输线电容和电感矩阵的有效方法。导体带的厚度既可为无限薄,又可为有限。利用逆FFT将谱域离散系统变换为空域离散系统,然后用矩量法求解结果。本文方法具有计算时间短和内存耗费较小的优点。最后给出了若干计算实例并与已有结果进行了比较。     

Determination of the Electrode Capacitance Matrix for GaAs FET's

In this paper, a method is presented which provides the electrode capacitance matrix for GaAs FET's. The method incorporates a Green's function, valid for conductors printed on or embedded in a grounded substrate, with the moment method technique. Although calculations for various geometries of printed conductors are considered, emphasis is placed on the computation of self- and mutual-capacitances for the source, gate, drain equivalent circuit of a GaAs FET. As an example, the speed power characteristics of a depletion-rnode GaAs FET inverter circuit are examined, as a function of device width, pad and gate length.     

Adaptive Nonuniform-Grid (NG) Algorithm for Fast Capacitance Extraction

A novel method for computing the capacitance matrices of arbitrary shaped three-dimensional geometries is presented. The proposed approach combines a novel nonuniform-grid (NG) algorithm for fast evaluation of potentials due to given source distributions with an iterative solution of the pertinent integral equations. The NG algorithm is based on the observation that locally the potential produced by a finite size source can be interpolated from its samples at a small number of points of a nonuniform spherical grid. This observation leads to a multilevel algorithm comprising interpolation and aggregation of potentials. The resulting hierarchical algorithm attains an$O (N)$asymptotic complexity and memory requirements. The computational efficiency is further improved for quasi-planar geometries by the use of adaptive grids.     

串联电容的静电驱动微执行器的动态Pull-in模型

在MEMS执行器的设计中,求出准确的pull-in参数是至关重要的.在过去的研究中,在准静态假设下,电压控制的MEMS微执行器的pull-in模型已经被提出,并且还提出了一些拓宽微执行器稳定行程的方法.在动态条件下,电压控制的MEMS微执行器的pull-in模型也已经被提出.但是,还没有人研究如何提高微执行器动态稳定行...     

A Method for Computing Edge Capacitance of Finite and Semi-Infinite Microstrip Lines (Short Papers)

This short paper describes a method for computing the edge capacitance of finite or semi-infinite sections of microstrip transmission lines. The approach is based on Galerkin's method applied in the Fourier-transform domain. It is mathematically simple and requires the inversion of rather small-size matrices.     

An efficient solver for the three-dimensional capacitance of theinterconnects in high speed digital circuit by the multiresolutionmethod of moments

The computation of the equivalent capacitances for three-dimensional (3-D) interconnects features large memory usage and long computing time. In this paper, a matrix sparsification approach based on multiresolution representation is applied with the method of moments (MoM) to calculate 3-D capacitances of interconnects in a layered media. Instead of direct expansion of the charge distribution by the orthogonal wavelet basis functions, the large full matrix resulting from discretization of the integral equations is taken as a discrete image and sparsified by two-dimensional (2-D) multiresolution representations. The inverse of the obtained sparse matrix is efficiently implemented by Schultz's iterative approach. Several numerical examples are given and the results obtained show that the proposed method significantly sparsifies the matrix equation and the capacitance parameters computed by the matrix equation with high sparsity agree well with the results of other reports and those computed by an established capacitance extractor FASTCAP     

Capacitance coefficients for VLSI multilevel metallization lines

The problem of reducing the complexity of parasitic capacitance evaluation of interconnection lines in a multilevel stratified dielectric medium (a good approximation for VLSI) is considered. We start out with a review of the Green's function method for the Si-SiO2composite and its derivation via the Fourier integral approach. Next, a piecewise linear finite-element technique is proposed to solve the integral equations that relate charges to potentials and lead to the desired capacitance matrix. We show by example that the proposed method is both less complex than methods based on piecewise constant surface charge distributions and equally accurate. This supports the accuracy and usefulness of the technique for IC design.     

Capacitance of Parallel Rectangular Plates Separated by a Dielectric Sheet

To determine the capacitance between two rectangular parallel plates separated by a dielectric sheet, the charge distribution on the plates is formulated in terms of a Fredholm integral equation of the first kind. This equation is solved numerically by a projective method using polynomial approximants. The resulting capacitance values are given in normalized graphical form, permitting capacitance determination for any practical values of dielectric constant and geometric parameters to within a few percent.