Preparation and Electric Properties of Bi0.5Na0.5TiO3–Bi(Al0.5Ga0.5)O3 Lead‐Free Piezoceramics

A new lead‐free BNT‐based piezoelectric ceramics of (1 ? x)Bi_0.5Na_0.5TiO₃–xBi(Al_0.5Ga_0.5)O₃ (x = 0, 0.02, 0.03, 0.04, and 0.05) were synthesized using a conventional ceramic fabrication method. Their structures and electrical properties were investigated. All the samples show a typical ferroelectric P(E) loops and S(E) curves at room temperature. The optimal properties are obtained at the composition of the x = 0.03. The substitution of Bi(Al_0.5Ga_0.5)O₃ enhances piezoelectric constant and increases Curie temperature from 58 pC/N and 310°C of pure BNT to 93 pC/N and 325°C of the x = 0.03. The temperature‐dependent P(E) loops and S(E) curves of 0.97BNT–0.03BAG indicate that phase transition from ferroelectric to antiferroelectric takes place over a very wide temperature region from 80°C to 180°C. The results show that the introduction of BAG improves the electrical properties of BNT.     

Dielectric Relaxor Evolution and Frequency‐Insensitive Giant Strains in (Bi0.5Na0.5)TiO3‐Modified Bi(Mg0.5Ti0.5)O3–PbTiO3 Ferroelectric Ceramics

The 0.45Bi(Mg_0.5Ti_0.5)O₃–(0.55 ? x)PbTiO₃–x(Bi_0.5Na_0.5)TiO₃ (BMT–PT–xBNT) ternary solid solution ceramics were prepared via a conventional solid‐state reaction method; the evolution of dielectric relaxor behavior and the electrostrain features were investigated. The XRD and dielectric measurements showed that all studied compositions own a single pseudocubic perovskite structure and undergo a diffuse‐to‐relaxor phase transition owing to the evolution of the domain from a frozen state to a dynamic state. The formation of the above dielectric relaxor behavior was further confirmed by a couple of measurements such as polarization loops, polarization current density curves, as well as bipolar strain loops. A large strain value of ~0.41% at a driving field of 7 kV/mm (normalized strain d₃₃* of ~590 pm/V) was obtained at room temperature for the composition with x = 0.32, which is located near the boundary between ergodic and nonergodic relaxor. Moreover, this electric field‐induced large strain was found to own a frequency‐insensitive characteristic.     

Large Electromechanical Strain in Lead‐Free Binary System K0.5Bi0.5TiO3‐Bi(Mg0.5Ti0.5)O3

Solid solution formation in the lead‐free binary system (1?x)K_0.5Bi_0.5TiO₃?xBi(Mg_0.5Ti_0.5)O₃ has been studied for compositions x ≤ 0.12. X‐ray powder diffraction shows single‐phase perovskite for x < 0.1, and a mixed phase region between tetragonal and pseudocubic phases for compositions 0.04 ≤ x ≤ 0.06. Large electromechanical strains of ~0.3% at fields of 50 kV/cm are recorded in the mixed phase region, with d₃₃* (S_max/E_max) values of ~600 pm/V. The materials sustain polarization at low electric fields with remnant polarization ~18 μC/cm² and coercive field ~20 kV/cm for x = 0.06. Relative permittivity‐temperature plots display relaxor characteristics, with peak temperature ~340°C.     

Enhanced dielectric properties of La-doped 0.75BaTiO3-0.25Bi(Mg0.5Ti0.5)O3 ceramics for X9R-MLCC application

A series of 0.75Ba_(1?x)La_2x/3TiO₃-0.25Bi(Mg_0.5Ti_0.5)O₃ (x = 0–0.2) ceramics have been synthesized by doping La₂O₃ into 0.75BaTiO₃-0.25Bi(Mg_0.5Ti_0.5)O₃ (0.75BT-0.25BMT), and their structure and dielectric properties investigated. Upon characterizing the structural properties, the single-phase perovskite structure is identified for all the samples and the long-range order of 0.75BT-0.25BMT is verified to be further destroyed with the addition of La₂O₃. Moreover, it is found that the density of 0.75BT-0.25BMT can be improved by doping with La₂O₃, which also promotes the grain growth. Regarding the dielectric properties, the peak shifting effect induced by La³⁺ improves the permittivity-temperature stability of 0.75BT-0.25BMT remarkably by strengthening its relaxation behavior. Among all the samples, 0.75Ba_0.8La_0.4/3TiO₃-0.25Bi(Mg_0.5Ti_0.5)O₃ shows the most outstanding permittivity-temperature stability with ε_r = 572 ± 15% (compared with ε_r at 25 °C) over the temperature range ?70°C–238 °C at 1 kHz, which is notably better than that of 0.75BT-0.25BMT (?4°C–58 °C) and satisfies the specification of the X9R multilayer ceramic capacitor (MLCC). Our work provides one promising option for selecting an alternative dielectric material in terms of permittivity-temperature stability, which advances the development of the X9R MLCC.     

Large Strain Response and Fatigue‐Resistant Behavior in Ternary Bi0.5Na0.5TiO3–BaTiO3–Bi(Zn0.5Ti0.5)O3 Solid Solutions

A ternary solid solution (1 ? x)(0.88Bi_0.5Na_0.5TiO₃–0.12BaTiO₃)‐xBi(Zn_0.5Ti_0.5)O₃ (BNBZT, BNBZTx) was designed and fabricated using the traditional solid‐state reaction method. The temperature and composition dependence of dielectric, ferroelectric, piezoelectric, and fatigue properties were systematically investigated and a schematic phase diagram was proposed. The substitution with Bi(Zn_0.5Ti_0.5)O₃ was found to shift the phase transition (ferroelectric tetragonal to relaxor pseudocubic phase) to lower temperatures. At a critical composition x of 0.05, large electric‐field‐induced strain response with normalized strain S_max/E_max as high as 526 pm/V was obtained under a moderate field of 4 kV/mm around room temperature. The strain exhibited good temperature stability within the temperature range of 25°C–120°C. In addition, excellent fatigue‐resistant behavior was observed in the proposed BNBZT solid solution after 10⁶ bipolar cycles. These give the BNBZT system great potential as environmental friendly solid‐state actuator.     

Dielectric temperature stability of Nb-modified Bi0.5(Na0.78K0.22)0.5TiO3 lead-free ceramics

In this study, the phase structure, microstructure and dielectric properties of Bi_0.5(Na_0.78K_0.22)_0.5(Ti_1-xNb_x)O₃ lead-free ceramics prepared by traditional solid phase sintering method were studied. The second phase pyrochlore bismuth titanate (Bi₂Ti₂O₇) was produced in the system after introduction of Nb⁵⁺. The dielectric constant of the sample (x = 0.03) sintered at 1130 °C at room temperature reached a maximum of 1841, and the dielectric loss was 0.045 minimum. It had been found that the K⁺ and Nb⁵⁺ co-doped Bi_0.5Na_0.5TiO₃ (BNT) lead-free ceramics exhibited outstanding dielectric-temperature stability within 100–400 °C with T_cc ≤±15%. Result of this research provides a valuable reference for application of BNT based capacitors in high temperature field.     

Stability of High‐Temperature Dielectric Properties for (1 − x)Ba0.8Ca0.2TiO3–xBi(Mg0.5Ti0.5)O3 Ceramics

Ceramics in the solid solution system, (1 ? x)Ba_0.8Ca_0.2TiO₃–xBi(Mg_0.5Ti_0.5)O₃, were prepared by a conventional mixed oxide route. Single‐phase perovskite‐type X‐ray diffraction patterns were observed for compositions x < 0.6. A change from tetragonal to single‐phase cubic X‐ray patterns occurred at x ≥ 0.1. Dielectric measurements indicated relaxor behavior for x ≥ 0.1. Increasing the Bi(Mg_0.5Ti_0.5)O₃ content improved the temperature sensitivity of relative permittivity ?_r at high temperatures. At x = 0.5, a near‐plateau relative permittivity, 835 ± 40, extended across the temperature range, 65°C–550°C; the permittivity increased at x = 0.6 to 2170 ± 100 for temperatures 160°C–400°C (1 kHz). The corresponding loss tangent, tanδ, was ≤0.025 for temperatures between 100°C and 430°C for composition x = 0.5; at x = 0.6, losses increased sharply at >300°C. Comparisons of dielectric properties with other materials proposed for high‐temperature capacitor applications suggest that (1 ? x)Ba_0.8Ca_0.2TiO₃–xBi(Mg_0.5Ti_0.5)O₃ ceramics are a promising base material for further development.     

Dielectric Properties of Ba0.8Ca0.2TiO3–Bi(Mg0.5,Ti0.5)O3–NaNbO3 Ceramics

Ceramics in the system 0.45Ba_0.8Ca_0.2TiO₃–(0.55?x)Bi(Mg_0.5Ti_0.5)O₃–xNaNbO₃, x = 0–0.02 were fabricated by a conventional solid‐state reaction route. X‐ray powder diffraction indicated cubic or pseudocubic symmetry for all samples. The parent 0.45Ba_0.8Ca_0.2TiO₃–0.55Bi(Mg_0.5Ti_0.5)O₃ composition is a relaxor dielectric with a near‐stable temperature coefficient of relative permittivity, ε_r = 950 ± 10% across the temperature range 80°C–600°C. Incorporation of NaNbO₃ at x = 0.2 extends the lower working temperature to ≤25°C, with ε_r = 575% ± 15% from temperatures ≤25°C to >400°C, and tan δ < 0.025 from 25°C to 400°C. Values of dc resistivity ranged from ~10⁹ Ω·m at 250°C to ~10⁶ Ω·m at 500°C. The properties suggest that this material may be of interest for high‐temperature capacitor applications.     

Dielectric and Piezoelectric Properties of (1−x)K0.5Bi0.5TiO3–xBa(Ti0.8Zr0.2)O3 Ceramics

The properties of relaxor ceramics in the compositional series (1?x)K_0.5Bi_0.5TiO₃–xBa(Ti_0.8Zr_0.2)O₃ have been investigated. Values of T_m, the temperature of maximum relative permittivity, decreased from 380°C at x = 0.0 to below room temperature for x > 0.7. Compositions x = 0.1 and 0.2 were piezoelectric and ferroelectric. The maximum value of d₃₃ piezoelectric charge coefficient, 130 pC/N, and strain, 0.14%, occurred at x = 0.1. Piezoelectric properties of x = 0.1 were retained after thermal cycling from room temperature to 220°C, consistent with results from high‐temperature X‐ray diffraction indicating a transition to single‐phase cubic at ~300°C.     

Large Electrostrictive Strain in (Bi0.5Na0.5)TiO3–BaTiO3–(Sr0.7Bi0.2)TiO3 Solid Solutions

Relaxor ferroelectrics (0.94 ? x)(Bi_0.5Na_0.5)TiO₃–0.06BaTiO_3?x(Sr_0.7Bi_0.2□_0.1)TiO₃ (BNT–BT–xSBT) (0 ≤ x ≤ 0.5), were prepared by a solid‐state reaction process, and their structures were characterized by the transmission electron microscopy and Raman spectroscopy. The BNT–BT–0.3SBT has a very high electrostrictive strain S = 0.152% with hysteresis‐free behavior, much more than the reported S in other ferroelectrics. S–P² profiles perfectly follow the quadratic relation, which indicates a purely electrostrictive effect with a high electrostrictive coefficient (Q₁₁) of 0.0297 m⁴/C². Even, its Q₁₁ keeps at a high level in the temperature range from ambient temperature to 180°C. The field‐induced large electrostrictive strain of BNT–BT–0.3SBT was attributed to the existence of ferroelectric nanodomains.     

Structure,relaxation behaviors and nonlinear dielectric properties of BaTiO3–Bi(Ti0.5Mg0.5)O3 ceramics

(1−x)BaTiO₃–xBi(Mg_1/2Ti_1/2)O₃ (BT–BMT, x=0–0.2, abbreviated as BT–BMT100x) ceramics were prepared by using a solid state reaction process. Their crystal structure, microstructure, conduction behavior, dielectric and tunability properties were investigated. It is found that the tetragonal phase and a pseudocubic phase coexist for x≤0.15 and transform to a pseudocubic phase at x=0.20. With the incorporation of BMT, BT–BMT becomes more insulating. The activation energies of the conduction are respectively 1.15(1) and 1.54(1) eV for grain and grain boundary of BT–BMT20. Furthermore, an abnormal nonlinear dielectric tunable behavior is observed. The dielectric permittivity first slightly increases until reaching the threshold electric field, and then suddenly decreases. This abnormal nonlinear dielectric behavior is attributed to the synergetic effects of the clamped oxygen vacancies and excessive aggregation of Bi at the grain boundaries.     

Normal‐Relaxor‐Diffuse Ferroelectric Phase Transition and Electrical Properties of Bi(Mg1/2Ti1/2)3–PbZrO3–PbTiO3 Solid Solution Ceramics Near the Morphotropic Phase Boundary

Perovskite‐type xBi(Mg_1/2Ti_1/2)O₃–(0.56 ? x)PbZrO₃–0.44PbTiO₃ (xBMT–PZ–PT) ternary solid solution ceramics were synthesized via a conventional solid‐state reaction method. The phase transition behaviors, dielectric, ferroelectric, and piezoelectric properties were investigated as a function of the BMT content. The X‐ray diffraction analysis showed that the tetragonality of xBMT–PZ–PT was enhanced with increasing the BMT content, and a morphotropic phase boundary (MPB) between rhombohedral and tetragonal phases was identified approximately in the composition of x = 0.08. In addition, the dielectric diffuseness and frequency dispersion behavior were induced with the addition of BMT and a normal‐relaxor‐diffuse ferroelectric transformation was observed from the PZ‐rich side to the BMT‐rich side. The electrical properties of xBMT–PZ–PT ceramics exhibit obviously compositional dependence. The x = 0.08 composition not only possessed the optimum properties with ε^T₃₃/ε₀ = 1450, Q_m = 69, d₃₃ = 390 pC/N, k_p = 0.46, P_r = 30 μC/cm², E_c = 1.4 kV/mm, T_c = 325°C, and a strain of 0.174% (d₃₃^* = 436 pm/V) under an electric field of 4 kV/mm as a result of the coexistence of two ferroelectric phases near the MPB, but also owned a good thermal‐depolarization behavior with a d₃₃ value of >315 pC/N up to 290°C and a frequency‐insensitive strain behavior.     

Enhanced pyroelectric properties in (Bi0.5Na0.5)TiO3–BiAlO3–NaNbO3 ternary system lead‐free ceramics

High pyroelectric performance and good thermal stability of pyroelectric materials are desirable for the application of infrared thermal detectors. In this work, enhanced pyroelectric properties were achieved in a new ternary (1?x)(0.98(Bi_0.5Na_0.5)(Ti_0.995Mn_0.005)O₃–0.02BiAlO₃)–xNaNbO₃ (BNT–BA–xNN) lead‐free ceramics. The effect of NN addition on the microstructure, phase transition, ferroelectric, and pyroelectric properties of BNT–BA–xNN ceramics were investigated. It was found that the average grain size decreased as x increased to 0.03, whereas increased with further NN addition. The pyroelectric coefficient p at room temperature (RT) was significantly increased from 3.87 × 10^?8Ccm^?2K^?1 at x = 0 to 8.45 × 10^?8Ccm^?2K^?1 at x = 0.03. The figures of merit (FOMs), F_i, F_v and F_d, were also enhanced with addition of NN. Because of high p (7.48 × 10^?8Ccm^?2K^?1) as well as relatively low dielectric permittivity (~370) and low dielectric loss (~0.011), the optimal FOMs at RT were obtained at x = 0.02 with F_i = 2.66 × 10^?10 m/V, F_v = 8.07 × 10^?2 m²/C, and F_d = 4.22 × 10^?5 Pa^?1/2, which are superior to other reported lead‐free ceramics. Furthermore, the compositions with x ≤ 0.03 exhibited excellent temperature stability in a wide temperature range from 20 to 80°C because of high depolarization temperature (≥110°C). Those results unveil the potential of BNT–BA–xNN ceramics for infrared detector applications.     

Photoluminescence and Temperature Dependent Electrical Properties of Er‐Doped 0.94Bi0.5Na0.5TiO3‐0.06BaTiO3 Ceramics

Er‐doped 0.94Bi_0.5Na_0.5TiO₃‐0.06BaTiO₃ (BNT‐6BT: xEr, x is the molar ratio of Er³⁺ doping) lead‐free piezoceramics with x = 0–0.02 were prepared and their multifunctional properties have been comprehensively investigated. Our results show that Er‐doping has significant effects on morphology of grain, photoluminescence, dielectric, and ferroelectric properties of the ceramics. At room temperature, the green (550 nm) and red (670 nm) emissions are enhanced by Er‐doping, reaching the strongest emission intensity when x = 0.0075. The complex and composition‐dependent effects of electric poling on photoluminescence also have been measured. As for electrical properties, on the one hand, Er‐doping tends to flatten the dielectric constant‐temperature (ε_r‐T) curves, leading to temperature‐insensitive dielectric constant in a wide temperature range (50°C–300°C). On the other hand, Er‐doping significantly decreases the ferroelectric‐relaxor transition temperature (T_F–R) and depolarization temperature (T_d), with the T_F–R decreasing from 76°C to 42°C for x = 0–0.02. As a result, significant composition‐dependent electrical features were found in ferroelectric and piezoelectric properties at room temperature. In general, piezoelectric and ferroelectric properties tend to become weaker, as confirmed by the composition‐dependent piezoelectric coefficient (d₃₃), planar coupling factor (k_p), and the shape of polarization‐electric field (P–E), current‐electric field (J–E), bipolar/unipolar strain‐electric field (S–E) curves. Furthermore, to understand the relationship between the T_F–R/T_d and the electrical properties, the composition of x = 0.0075 has been intensively studied. Our results indicate that the BNT‐6BT: xEr with appropriate Er‐doping may be a promising multifunctional material with integrated photoluminescence and electrical properties for practical applications.     

Structural and Dielectric Properties in (1−x)BaTiO3–xBi(Mg1/2Ti1/2)O3 Ceramics (0.1 ≤ x ≤ 0.5) and Potential for High‐Voltage Multilayer Capacitors

Structural and dielectric properties of (1?x)BaTiO₃–xBi(Mg_1/2Ti_1/2)O₃ (x = 0.1–0.5) were investigated to understand the binary system and utilize it for high‐voltage, high energy density capacitors. The solubility limit for Bi(Mg_1/2Ti_1/2)O₃ in a BaTiO₃ perovskite was between x = 0.4 and x = 0.5. A phase with pseudocubic symmetry was formed for x = 0.1–0.4; a secondary phase developed at x = 0.5. Dielectric measurements showed highly diffusive and dispersive relaxor‐like characteristics from 10 to 40 mol% of Bi(Mg_1/2Ti_1/2)O₃. These compositions also showed high relative permittivity with low‐temperature coefficients of permittivity over a wide range of temperatures ?100°C–600°C. Relaxation behavior was quantitatively investigated using the Vogel–Fulcher model, which revealed the activation energy of 0.17–0.22 eV. Prototyped multilayer capacitors of 18 mm × 17 mm × 4 mm dimensions with a capacitance of 12.5 nF at 1 kHz were successfully constructed and demonstrated multiple charge–discharge characteristics up to 10 kV.     

Enhanced optical transmittance and energy-storage performance in NaNbO3-modified Bi0.5Na0.5TiO3 ceramics

Dielectric ceramics with both excellent energy storage and optical transmittance have attracted much attention in recent years. However, the transparent Pb-free energy-storage ceramics were rare reported. In this work, we prepared transparent relaxor ferroelectric ceramics (1 − x)Bi_0.5Na_0.5TiO₃–xNaNbO₃ (BNT–xNN) by conventional solid-state reaction method. We find the NN-doping can enhance the polarization and breakdown strength of BNT by suppressing the grain growth and restrained the reduction of Ti⁴⁺ to Ti³⁺. As a result, a high recoverable energy-storage density of 5.14 J/cm³ and its energy efficiency of 79.65% are achieved in BNT–0.5NN ceramic at 286 kV/cm. Furthermore, NN-doping can promote the densification to improve the optical transmittance of BNT, rising from ∼26% (x = 0.2) to ∼32% (x = 0.5) in the visible light region. These characteristics demonstrate the potential application of BNT–xNN as transparent energy-storage dielectric ceramics.     

The Relationship Between Phase Structure and Electrical Properties in (1 − x)(Bi0.5Na0.5TiO3–Ba0.5K0.5TiO3–BaTiO3)‐ xK0.5Na0.5NbO3 Quaternary Lead‐Free Piezoelectric Ceramics

(1 ? x)(0.85Bi_0.5Na_0.5TiO₃–0.11Ba_0.5K_0.5TiO₃–0.04BaTiO₃)‐ xK_0.5Na_0.5NbO₃ lead‐free piezoelectric ceramics with x = 0.00, 0.02, 0.03, 0.04, 0.05, and 0.10 were prepared by a conventional solid state method. A coexistence of rhombohedral (R) and tetragonal (T) phases was found in the system, which tended to evolve into pseudocubic symmetry when x increases. The x = 0.04 sample exhibited improved electrical properties: the dielectric constant ε_r = 1900 with the low loss tangents 0.06, the S_max/E_max of ~400 and ~460 pm/V under unipolar and bipolar electric field, respectively. Meanwhile, piezoelectric constant d₃₃ still maintained ~160 pC/N. These could be owed to the formation of polar nanoregions for relaxor phase.     

Impedance spectroscopy,B-site cation ordering and structure–property relations of (1 − x) La[Al0.9(Mg0.5Ti0.5)0.1]O3–x CaTiO3 ceramics for 5G dielectric waveguide filters

Dense (1 ? x) La[Al_0.9(Mg_0.5Ti_0.5)_0.1]O₃–x CaTiO₃ ceramics were synthesized via solid-state reaction. The crystal structure and microwave dielectric properties of the ceramics were systematically investigated. Rietveld refinement revealed that when x ≤ 0.2, the ceramics had a rhombohedral structure with an R-3c space group. When x ≥ 0.5, the ceramics had an orthorhombic structure with a Pbnm space group. Selected area electron diffraction and Raman spectroscopy analyses proved that the microwave dielectric ceramics had a B-site order, which accounted for the great improvement in microwave dielectric properties. The content of oxygen vacancies was identified through X-ray photoelectron spectroscopy, and the change rule of Q × f was closely related to oxygen vacancy content. The perturbation of A-site cations had an important influence on dielectric constant. Specifically, with the increase in Ti⁴⁺ content, the perturbation effect of the A-site cations was enhanced and dielectric constant increased. When x = 0.65, the temperature coefficient of resonant frequency of the (1 ? x) La[Al_0.9(Mg_0.5Ti_0.5)_0.1]O₃–x CaTiO₃ microwave dielectric ceramics was near zero. The optimal microwave dielectric properties of 0.35LaAl_0.9(Mg_0.5Ti_0.5)_0.1O₃–0.65CaTiO₃ were ε_r = 44.6, Q × f = 32,057 GHz, and τ_f = +2 ppm/°C.     

Ultra‐Wide Temperature Stable Dielectrics Based on Bi0.5Na0.5TiO3–NaNbO3 System

The microstructure, phase structure, ferroelectric, and dielectric properties of (1?x)Bi_0.5Na_0.5TiO₃‐xNaNbO₃ [(1?x)BNT‐xNN] ceramics conventionally sintered in the temperature range of 1080°C–1120°C were investigated as a candidate for capacitor dielectrics with wide temperature stability. Perovskite phase with no secondary impurity was observed by XRD measurement. With increasing NN content, (1?x)BNT‐xNN was found to gradually transform from ferroelectric (x = 0–0.05) to relaxor (x = 0.10–0.20) and then to paraelectric state (x = 0.25–0.35) at room temperature, indicated by P–I–E loops analysis, associated with greatly enhanced dielectric temperature stability. For the samples with x = 0.25–0.35, the temperature coefficient of capacitance (TCC) was found <11% in an ultra‐wide temperature range of ?60°C–400°C with moderate dielectric constant and low dielectric loss, promising for temperature stable capacitor applications.     

Effect of chemical inhomogeneity on domains and ferroelectric properties of Fe‐modified 0.77Bi0.5Na0.5TiO3–0.23SrTiO3

Lead‐free 0.77(Bi_0.5Na_0.5)TiO₃–0.23Sr(Ti_1?xFe_x)O₃ (x = 0, 0.04) (BNT–23STF_x) was prepared using a conventional solid‐state reaction route. The effects of Fe‐modification on the chemical homogeneity from a μm scale perspective, the core‐shell domains structures, and the ferroelectric properties were investigated. The chemical homogeneity was analyzed using energy dispersive X‐ray mapping in scanning transmission electron microscopy mode, and the field‐dependent behaviors of strain and polarization were obtained to determine the ferroelectric properties. Substituting Fe³⁺ for Ti⁴⁺ resulted in completely different electrical behavior and properties, despite similar XRD patterns and microstructures. The Fe‐substitution promoted the mobility of Sr²⁺ ions in the BNT phase and, as a consequence, the chemical homogeneity increased and the core‐domains collapsed. Extending the ceramic processing, such as milling time and sintering time, affected domain distribution and compositional inhomogeneity, which led to a gradual transformation from ferroelectric to relaxor.