Non-additive sintering of Si2N2O ceramic with enhanced high-temperature strength,oxidation resistance,and dielectric properties

The high-temperature mechanical and dielectric properties of Si₂N₂O ceramics are often limited by the introduction of a sintering aid. Herein, dense Si₂N₂O was prepared at 1700 °C by hot-pressing oxidized amorphous Si₃N₄ powder without sintering additives. A homogeneous network with short-range order and a SiN₃O structure was formed in the oxidized amorphous Si₃N₄ powder during the hot-pressing process. Si₂N₂O crystals preferentially nucleated at positions within the SiN₃O structure and grew into rod-like and plate-like grains. Fully dense ceramics with mainly crystalline Si₂N₂O and some residual amorphous phases were obtained. The as-prepared Si₂N₂O possessed a good flexural strength of 311 ± 14.9 MPa at 1400 °C, oxidation resistance at 1500 °C, and a low dielectric loss tangent of less than 5 × 10⁻³ at 1000 °C.     

Low‐Temperature Preparation of β‐Si3N4 Porous Ceramics with a Small Amount of Li2O–Y2O3

Porous β‐Si₃N₄ ceramics are sintered at 1600°C in N₂ and postheat treated at 1500°C under vacuum using Li₂O and Y₂O₃ as the sintering additives. The partial sintering and phase transformation are promoted at low temperature by the addition of Li₂O. The addition of Y₂O₃ is advantageous for the formation of high aspect ratio β‐Si₃N₄ grains. After postheat treatment, a large amount of intergranular glassy phase is removed, and the Li content in the samples is decreased. By this method, the β‐Si₃N₄ porous ceramic with a porosity of 54.1% and high flexural strength of 110 ± 8.1 MPa can be prepared with a small amount of sintering additives, 0.66 wt% Li₂O and 0.33 wt% Y₂O₃, and it is suitable for high‐temperature applications.     

Enhanced thermal conductivity in Si3N4 ceramics by carbonizing polydopamine coatings

To enhance the thermal conductivity of Si₃N₄, a polydopamine (PDA) coating was creatively introduced into ceramics sintered with different additive contents through a two-step sintering process consisting of a first treatment at 1500 °C for 8 h followed by 12 h at 1900 °C under 1 MPa nitrogen pressure. After the first-step sintering, the PDA-coated sample exhibited a higher elimination effect of the liquid phase and an increase in the N/O ratio, which allowed the additives to directly interact with the Si₃N₄ grains, resulting in a microstructure with more and larger rod-shaped grains. After the second-step sintering, the densified samples of the PDA-coating attained slightly coarser rod-shaped grains, lower O content, higher N/O ratio and peak intensity (XRD) of the Y₂Si₃O₃N₄ phase, thicker grain boundary film, and secondary phases mainly residing in multigrain junctions. Consequently, the thermal conductivity of all the PDA-coated samples typically showed a 10–12% increment in comparison to the PDA-free samples for each additive content.     

Crystallization Mechanism of CVD Si3N4–SiCN Composite Ceramics Annealed in N2 Atmosphere and Their Excellent EMW Absorption Properties

To tailor a new electromagnetic wave (EMW) absorbing material with lower reflection coefficient (RC) and larger operating frequency band, the CVD Si₃N₄–SiCN composite ceramics were prepared from SiCl₄–NH₃–C₃H₆–H₂–Ar system and then annealed at the temperatures of 1400–1700°C in N₂ atmosphere. Effect of the annealing temperatures on the microstructure, phase composition, permittivity, and microwave‐absorbing properties of the ceramic were investigated. Results showed that the CVD Si₃N₄–SiCN ceramics gradually crystallized into nanosized SiC grains, Si₃N₄ grains and graphite (T ≤ 1600°C), and then the grains grew up at T = 1700°C. The permittivity, dielectric loss, and electrical conductivity of as‐annealed CVD Si₃N₄–SiCN ceramics (T ≤ 1600°C) increased firstly due to the formation of conductivity and polarity network and the increase in nanograin boundary, and then decreased at 1700°C because of the growth of nanograins and the disappearance of nanograin boundary. The minimal RC and effective absorption bandwidth of the as‐annealed CVD Si₃N₄–SiCN ceramic at 1600°C was ?41.67 dB at the thickness of 2.55 mm and 3.95 GHz at the thickness of 3.05 mm, respectively, demonstrating that the totally crystallized CVD Si₃N₄–SiCN ceramic (T = 1600°C) had the superior microwave‐absorbing ability.     

Processing of vacuum heat-treated MgO-densified silicon nitride crucible for molten cast iron handling

Silicon nitride with 3% MgO powder mix is uniaxially and cold isostatically pressed to form a green Si₃N₄ crucible. Liquid phase sintering was applied to the green Si₃N₄ crucible at 1600 °C for 30 min under the nitrogen atmosphere. Intergranular Mg–Si–O–N glass remained between the silicon nitride grains which reacted with the molten metal during melting. This grain boundary glass was removed by vacuum heat treatment at 1575 °C for 5 h. The vacuum heat treated crucible was used to melt cast iron to examine reactions between the molten metal and Si₃N₄ ceramic crucible. EDX spectra across the Si₃N₄–cast iron interface and XRD for silicon nitride sample after cast-iron melting side surface analysis were carried out. Optical microscopy and SEM image analysis were made to examine the interaction between Si₃N₄ crucible and cast iron melt. Surprisingly, no reaction was observed between the vacuum heat treated crucible and melted cast iron.     

Improved oxidation resistance properties of Si3N4/O′–SiAlON composite ceramics by a repeated sintering method

Si₃N₄/O′–SiAlON composite ceramics with superior oxidation resistance properties were fabricated by a repeated sintering method. The effects of sintering time on the phase evolution, microstructure, and oxidation resistance properties of the Si₃N₄/O′–SiAlON composite ceramics were investigated. The results indicated that the content of the O′–SiAlON phase and the densification of Si₃N₄/O′–SiAlON composite ceramics increased after two-time sintering. Furthermore, the thickness of the oxide layer of the Si₃N₄/O′–SiAlON composite ceramics after oxidation at 1100–1500°C for 30 h was not significant. Compared to the oxidation weight gain after the one-time sintering process, the oxidation weight gain of Si₃N₄/O′–SiAlON composite ceramics was 0.432 mg/cm² after two-time sintering when oxidized at 1500 C for 30 h, which was reduced by 43.3%. The mechanism of the improved oxidation resistance properties was ascribed to the formation of more O′–SiAlON and the enhancement of the densification.     

In situ synthesis of Si2N2O/Si3N4 composite ceramics using polysilyloxycarbodiimide precursors

In situ synthesis of Si₂N₂O/Si₃N₄ composite ceramics was conducted via thermolysis of novel polysilyloxycarbodiimide ([SiOSi(NCN)₃]_n) precursors between 1000 and 1500 °C in nitrogen atmosphere. The relative structures of Si₂N₂O/Si₃N₄ composite ceramics were explained by the structural evolution observed by electron energy-loss spectroscopy but also by Fourier transform infrared and ²⁹Si-NMR spectrometry. An amorphous single-phase Si₂N₂O ceramic with porous structure with pore size of 10–20 μm in diameter was obtained via a pyrolyzed process at 1000 °C. After heat-treatment at 1400 °C, a composite ceramic was obtained composed of 53.2 wt.% Si₂N₂O and 46.8 wt.% Si₃N₄ phases. The amount of Si₂N₂O phase in the composite ceramic decreased further after heat-treatment at 1500 °C and a crystalline product containing 12.8 wt.% Si₂N₂O and 87.2 wt.% Si₃N₄ phases was obtained. In addition, it is interesting that residual carbon in the ceramic composite nearly disappeared and no SiC phase was observed in the final Si₂N₂O/Si₃N₄ composite.     

High-temperature properties and interface evolution of C/SiBCN composites prepared by precursor infiltration and pyrolysis

C/SiBCN composites with a density of 1.64 g/cm³ were prepared via precursor infiltration and pyrolysis and the bending strength and modulus at room temperature was 305 MPa and 53.5 GPa. The precursor derived SiBCN ceramics showed good thermal stability at 1600 °C and the SiC and Si₃N₄ crystals appeared above 1700 °C. The bending strength of the composites was 180 MPa after heat treatment at 1500 °C, and maintained at 40 MPa-50 MPa after heat treatment for 2 h at 1600 °C–1900 °C. In C/SiBCN composites, SiBCN matrix could retain amorphous up to 1500 °C and SiC grains appeared at 1600 °C but without Si₃N₄. The reason for no detection of Si₃N₄ was that the carbon fiber reacted with Si₃N₄ to form an interface layer (composed of SiC and unreacted C) and a polycrystalline transition layer (composed of B and C elements), leading to the degradation of the mechanical properties.     

Robust super-hydrophobic inorganic nanoparticles modified layered structure Si2N2O membrane for membrane distillation

Robust super-hydrophobic ceramic membranes consisting of layered structure Si₂N₂O grains and organosilane-derived inorganic nanoparticles were successfully fabricated and employed for membrane distillation. First, phase inversion and sintering method were used to prepare porous Si₂N₂O membranes. The slurry composition and sintering temperature were optimized to obtain a pure phase Si₂N₂O membrane with high bending strength, tailored average pore size, and high permeability. Then, the Si₂N₂O membranes were modified with organosilane-derived inorganic nanoparticles through ammonolysis and pyrolysis reactions. Due to the micro and nano-hierarchical rough structures and the presence of -Si-CH₃ groups, the membranes showed super-hydrophobicity with a water contact angle of 152 ± 1°. Finally, the membranes were applied to desalinate seawater by sweeping gas membrane distillation. A stable water flux of 76 ± 0.9 L/(m² day) with a salt rejection of > 99% was recorded during 30 h distillation test at 75 °C, demonstrating the stability and durability of the membranes.     

Fabrication of in situ elongated β-Sialon grains bonded to tungsten carbide via two-step spark plasma sintering

In order to reduce the difficulty of preparing binder-less cemented carbide and further broaden its application prospects, tungsten carbide toughened by in situ elongated β-Sialon grains was developed via sintering ball-milled WC and α-Si₃N₄ powders using Al₂O₃–ZrO₂ as a sintering aid and transformation additive. The two-step spark plasma sintering of the mixture at 1650 °C with dwelling at 1500 °C for 10 min was conducted under 30 MPa uniaxial pressure, and the densification behaviors, phase transformations, mechanical properties, and microstructures of the produced composites were investigated. The addition of Al₂O₃–ZrO₂ reduced the initial temperature of the densification process by approximately 100 °C and its final temperature by 200 °C (compared with the densification temperatures of pure WC and Si₃N₄ materials) and fully transformed α-Si₃N₄ to Sialon (Si–Al–O–N) phases. Microstructural characterization data showed that the WC matrix contained homogeneously distributed equiaxed and elongated β-Si₅AlON₇ grains. The WC composites containing in situ elongated β-Sialon grains exhibited an optimal hardness of 18.93 ± 0.03 GPa and enhanced fracture toughness of 10.43 ± 0.27 MPa m^1/2. The toughening mechanism of the β-Sialon phase involved the pull-out of elongated grains and crack bridging.     

ZrSi2–MgO as novel additives for high thermal conductivity of β-Si3N4 ceramics

A novel ZrSi₂–MgO system was used as sintering additive for fabricating high thermal conductivity silicon nitride ceramics by gas pressure sintering at 1900°C for 12 hours. By keeping the total amount of additives at 7 mol% and adjusting the amount of ZrSi₂ in the range of 0-7 mol%, the effect of ZrSi₂ addition on sintering behaviors and thermal conductivity of silicon nitride were investigated. It was found that binary additives ZrSi₂–MgO were effective for the densification of Si₃N₄ ceramics. XRD observations demonstrated that ZrSi₂ reacted with native silica on the Si₃N₄ surface to generate ZrO₂ and β-Si₃N₄ grains. TEM and in situ dilatometry confirmed that the as formed ZrO₂ collaborated with MgO and Si₃N₄ to form Si–Zr–Mg–O–N liquid phase promoting the densification of Si₃N₄. Abnormal grain growth was promoted by in situ generated β-Si₃N₄ grains. Consequently, compared to ZrO₂-doped materials, the addition of ZrSi₂ led to enlarged grains, extremely thin grain boundary film and high contiguity of Si₃N₄–Si₃N₄ grains. Ultimately, the thermal conductivity increased by 34.6% from 84.58 to 113.91 W·(m·K)⁻¹ when ZrO₂ was substituted by ZrSi₂.     

Nanostructure and bimodal structure of Si3N4 ceramics developed by spark plasma sintering method

Abstract

The densification of high energy ball milled Si₃N₄ nanopowders through spark plasma sintering was investigated. Nanoceramics of Si₃N₄, with fine microstructure, comprising of grains with a diameter of ～70 nm, were produced after sintering at 1600°C for 5 min in N₂ atmosphere with a fast heating rate of 300 K min^?1. The size and the aspect ratio of Si₃N₄ grains increased with decreasing heating rate and increasing holding time and temperature. Post-annealing of sintered ceramics at 1850°C for 3 h favoured development of a self-reinforced bimodal microstructure containing large elongated grains.     

Fabrication of Si3N4 ceramics with high thermal conductivity and flexural strength via novel two-step gas-pressure sintering

Si₃N₄ ceramic substrates serving as heat dissipater and supporting component are required to have excellent thermal and mechanical properties. To prepare Si₃N₄ with desirable properties, a novel two-step gas-pressure sintering route including a pre-sintering step followed by a high-temperature sintering step was devised. The effects of pre-sintering temperature (1500 – 1600 °C) on the phase transformation, microstructure, thermal and mechanical properties of the samples were studied. The pre-sintering temperature played an important role in adjusting the Si₃N₄ particles’ rearrangement and α→β transformation rate. Furthermore, the densification process for the Si₃N₄ ceramics prepared via the two-step gas-pressure sintering was revealed. After sintered at 1525 °C for 3 h followed by a high-temperature sintering at 1850 °C for another 3 h, the prepared Si₃N₄ compact with a bimodal microstructure presented the highest thermal conductivity and flexural strength of 79.42 W·m^?1·K^?1 and 801 MPa, respectively, which holds great application prospects as ceramic substrates.     

Equiaxed β–Si3N4 ceramics prepared by rapid reaction‐bonding and post‐sintering using TiO2–Y2O3–Al2O3 additives

Sintered reaction‐bonded Si₃N₄ ceramics with equiaxed microstructure were prepared with TiO₂–Y₂O₃–Al₂O₃ additions by rapid nitridation at 1400°C for 2 hours and subsequent post‐sintering at 1850°C for 2 hours under N₂ pressure of 3 MPa. It was found that α–Si₃N₄, β–Si₃N₄, Si₂N₂O, and TiN phases were formed by rapid nitridation of Si powders with single TiO₂ additives. However, the combination of TiO₂ and Y₂O₃–Al₂O₃ additives led to the formation of 100% β–Si₃N₄ phase from the nitridation of Si powders at such low temperature (1400°C), and the removal of Si₂N₂O phase. As a result, dense β–Si₃N₄ ceramics with equiaxed microstructure were obtained after post‐sintering at high temperature.     

Microstructure and mechanical properties of superplastically deformed silicon nitride–silicon oxynitride in situ composites

Silicon nitride–silicon oxynitride in situ composites were fabricated by plane-strain-compressing dense silicon nitrides, starting from 93 wt.% ultrafine β-Si₃N₄ and 7 wt.% cordierite, at 1600 °C under a constant load of 40 MPa and subsequent annealing at 1750 °C for 30 min. The resulting composites featured a microstructure of elongated Si₂N₂O grains (∼0.64 μm in diameter and ∼5.5 in aspect ratio) dispersed in a fine-grained β-Si₃N₄ matrix (∼ 0.30μm in diameter and ∼3.5 in aspect ratio), with the amount of Si₂N₂O, which had relatively strong textures, being strain-dependent. The mechanical properties were found to be improved due to the development of elongated Si₂N₂O grains, the texture formation, and the coarsening of β-Si₃N₄. Fracture toughness, however, was still low (∼5.2 MPa m^1/2) for these composites in comparison to self-reinforced silicon nitrides, resulted from the strong Si₂N₂O-matrix interfacial bond and nearly equiaxed β-Si₃N₄ with a small grain size. Anticipated property anisotropies were clearly observed as a result of the textured microstructure.     

Effects of Impurity Iron Content on Characteristics of Sintered Reaction‐Bonded Silicon Nitride

The effects of impurity iron content on characteristics of sintered reaction‐bonded silicon nitrides were examined by adding iron powder to a high purity raw Si powder. Powder compacts of the raw Si powder doped with 2 mol% Y₂O₃ and 5 mol% MgSiN₂ as sintering additives and Fe as impurity (0 mass%, 0.1 mass%, 1.0 mass% and 5.0 mass%) were nitrided at 1400°C for 8 h under a N₂ pressure of 0.1 MPa, followed by post‐sintering at 1900°C for 6 h under a N₂ pressure of 0.9 MPa. All the SRBSN (Sintered Reaction‐Bonded Silicon Nitride) specimens had about the same 4‐point bending strength of 730–770 MPa. The fracture toughness of the specimens was gradually decreased with increasing Fe additive amount due to the inhibition of development of rodlike β‐Si₃N₄ grains by SiFe_x particles formed during nitridation process. The thermal conductivity was also decreased with an increase in Fe amount. It seems that the increasing oxygen in grain‐boundary phase caused by the oxidation of Fe during milling resulted in the increase in lattice oxygen of β‐Si₃N₄ grains, which caused phonon scattering and thereby decreased thermal conductivity of β‐Si₃N₄. There was little change in the dielectric breakdown strength of the specimens: 24, 22, 22, and 21 kV/mm for the specimens without Fe, and with 0.1 mass%, 1.0 mass% and 5.0 mass% Fe, respectively. The surface resistivity of the specimens with 0 mass%, 0.1 mass% and 1.0 mass% Fe was in the range of 10¹³ Ω, but the specimen with 5 mass% Fe was about one order lower than the others.     

Synthesis mechanism of AlN–SiC solid solution reinforced Al2O3 composite by two-step nitriding of Al–Si3N4–Al2O3 compact at 1500 °C

The in-situ controllable synthesis of AlN–SiC solid solution reinforcement in large-sized Al–Si₃N₄–Al₂O₃ composite refractory by two-steps nitriding sintering was examined. In the first step, a dynamic Al@AlN structure was constructed in the composite by pre-nitriding at 580 °C. During the subsequent sintering process, it cracked above ∼900 °C, and micronized Al cluster (mixture of droplets and vapor) was extracted out gradually. As a result, multiple AlN mesophases were formed through different reaction paths, including i) initial AlN shell formed by solid Al with N₂, ii) reaction of Al cluster with N₂, and iii) reaction of Al cluster with Si₃N₄ from 900 °C to 1500 °C. The Si₃N₄ precursor serves as both a solid nitrogen source and an active Si source, and the controllable reaction between Al and Si₃N₄ leading to uniformly distributed AlN and Si mesophases. AlN–SiC solid solution is significantly formed when liquid Si appears. The shell, granule and whisker SiC–AlN solid solution were observed mainly depending on the dynamic AlN mesophase. The SiC–AlN solid solution reinforced Al₂O₃ materials is a novel promising refractory for large-scale blast furnace lining.     

Fabrication of high thermal conductivity silicon nitride ceramics by pressureless sintering with MgO and Y2O3 as sintering additives

The fabrication of silicon nitride (Si₃N₄) ceramics with a high thermal conductivity was investigated by pressureless sintering at 1800 °C for 4 h in a nitrogen atmosphere with MgO and Y₂O₃ as sintering additives. The phase compositions, relative densities, microstructures, and thermal conductivities of the obtained Si₃N₄ ceramics were investigated systemically. It was found that at the optimal MgO/Y₂O₃ ratio of 3/6, the relative density and thermal conductivity of the obtained Si₃N₄ ceramic doped with 9 wt% sintering aids reached 98.2% and 71.51 W/(m·K), respectively. EDS element mapping showed the distributions of yttrium, magnesium and oxygen elements. The Si₃N₄ ceramics containing rod-like grains and grain boundaries were fabricated by focused ion beam technique. TEM observations revealed that magnesium existed as an amorphous phase and that yttrium produced a new secondary phase.     

Effects of different types of sintering additives and post-heat treatment (PHT) on the mechanical properties of SHS-fabricated Si3N4 ceramics

Porous silicon nitride (Si₃N₄) ceramics were fabricated by self-propagating high temperature synthesis (SHS) using Si, Si₃N₄ and sintering additive as raw materials. Effects of different types of sintering additives with varied ionic radius (La₂O₃, Sm₂O₃, Y₂O₃, and Lu₂O₃) on the phase compositions, development of Si₃N₄ grains and flexural strength (especially high-temperature flexural strength) were researched. Si₃N₄ ceramics doped with sintering additive of higher ionic radius had higher average aspect ratio, improved room-temperature flexural strength but degraded high-temperature flexural strength. Besides, post-heat treatment (PHT) was conducted to crystallize amorphous grain boundary phase thus improving the creep resistance and high-temperature flexural strength of SHS-fabricated Si₃N₄ ceramics. Excellent high-temperature flexural strength of 140 MPa~159 MPa and improved strength retention were achieved after PHT at 1400 °C.     

Effect of nano- and micro-sized Si3N4 powder on phase formation,microstructure and properties of β′-SiAlON prepared by spark plasma sintering

The phase formation behavior of β′-SiAlON with the general formula Si_6-zAl_zO_zN_8-z was studied comprehensively for z values from 1 to 3 using spark plasma sintering (SPS) as the consolidation technique at synthesis temperatures from 1400 to 1700 °C. The samples were prepared close to the β′-SiAlON composition line: Si₃N₄ ? 4/3(AlN·Al₂O₃) in the phase diagram using (A) nano-sized amorphous Si₃N₄ and (B) micro-sized β-Si₃N₄ precursors. Field-emission scanning electron microscopy (FESEM) was used for microstructural analysis.Most compositions reached almost full density at all SPS temperatures. Compared with the micro-sized β-Si₃N₄ precursor, the nano-sized amorphous Si₃N₄ precursor accelerated the reaction kinetics, promoting the formation of dense β′-SiAlON + O′-SiAlON composites after SPS at synthesis temperatures of 1400–1500 °C. This resulted in very high values of Vickers hardness (Hv₁₀) = 18.2–19.2 GPa for the z = 1 composition related to the hardness of the O′-SiAlON component phase.In general, for samples synthesized from nano-sized amorphous Si₃N₄, which were almost fully dense, containing >95% β′-SiAlON, the hardness values were 13.4–13.8 GPa with a fracture toughness of 3.5–4.6 MPa m^1/2. For equivalent samples synthesized from micro-sized β-Si₃N₄, hardness was in the range 13.9–14.4 GPa with a fracture toughness of 4.3–4.5 MPa.m^1/2. These values are comparable with fully dense β′-SiAlONs, usually containing intergranular glass phase which has been sintered by HIP and other processes at much higher temperatures for longer times.