同轴封装半导体激光器的散热研究

通过对激光器传热过程的理论分析,建立了同轴封装半导体激光器的物理散热模型,利用计算流体力学(CFD)软件对T056和T038两种同轴封装的半导体激光器进行了散热模拟分析,并设计了相关的实验(在激光器里面装上热敏电阻)对激光器管芯的温度进行检测,实验结果与仿真结果非常吻合,对激光器组件的设计有一定的指导意义.     

中国电子科技集团公司第十三研究所光电专业部产品推介

<正>中国电子科技集团公司第十三研究所从事半导体光电器件研制与生产30余年,拥有一条国际先进水平的工艺线,涵盖材料外延、圆片加工和器件封装等全套工艺,主要产品有大功率半导体激光器、高速半导体激光器和高速探测器。其中大功率激光器代表产品有连续/准连续阵列激光器、高亮度光纤耦合激光器和窄脉冲激光器,应用于固态激光器泵浦、光纤激光器泵浦和激光雷达等领域;高速激光器和探测器代     

中国电子科技集团公司第十三研究所光电专业部产品推介

<正>中国电子科技集团公司第十三研究所从事半导体光电器件研制与生产30余年,拥有一条国际先进水平的工艺线,涵盖材料外延、圆片加工和器件封装等全套工艺,主要产品有大功率半导体激光器、高速半导体激光器和高速探测器。其中大功率激光器代表产品有连续/准连续阵列激光器、高亮度光纤耦合激光器和窄脉冲激光器,应用于固态激光器泵浦、光纤激光器泵浦和激光雷达等领域;高速激光器和探测器代     

中国电子科技集团公司第十三研究所光电专业部产品推介

<正>中国电子科技集团公司第十三研究所从事半导体光电器件研制与生产30余年,拥有一条国际先进水平的工艺线,涵盖材料外延、圆片加工和器件封装等全套工艺,主要产品有大功率半导体激光器、高速半导体激光器和高速探测器。其中大功率激光器代表产品有连续/准连续阵列激光器、高亮度光纤耦合激光器和窄脉冲激光器,应用于固态激光器泵浦、光纤激光器泵浦和激光雷达等领域;高速激光器和探测     

不同过渡热沉封装微盘腔半导体激光器热分析

为了降低微盘腔半导体激光器工作时有源区的温度,提升封装的可靠性,基于Ansys Workbench有限元分析分别对AlN,WCu10,SiC,石墨烯,以及CVD金刚石过渡热沉封装的蜗线型微盘腔半导体激光器进行了热特性分析,得到了器件工作时的温度分布以及热应力、热应变分布.结果显示,SiC封装器件的有源区温度较AlN和WCu10封装器件分别降低了 2.18,3.078 C,并在五种过渡热沉封装器件中表现出最低的热应力,器件热应变最小.SiC过渡热沉封装可以有效降低微盘腔半导体激光器工作时的有源区温度,同时减少封装应力与器件应变,从而提高器件的散热能力和可靠性.计算结果对半导体激光器单管散热及阵列集成散热均有指导意义.     

中国电子科技集团公司第十三研究所光电专业部产品推介

<正>中国电子科技集团公司第十三研究所从事半导体光电器件研制与生产30余年,拥有一条国际先进水平的工艺线,涵盖材料外延、圆片加工和器件封装等全套工艺,主要产品有大功率半导体激光器、高速半导体激光器和高速探测器。其中大功率激光器代表产品有连续/准连续阵列激光器、高亮度光纤耦合激光器和窄脉冲激光器,应用于固态激光器泵浦、光纤激光器泵浦和激光雷达等领域;高速激光器和探测器代表产品有DFB激光器、pin探测器和     

中国电子科技集团公司第十三研究所光电专业部产品推介

<正>中国电子科技集团公司第十三研究所从事半导体光电器件研制与生产30余年,拥有一条国际先进水平的工艺线,涵盖材料外延、圆片加工和器件封装等全套工艺,主要产品有大功率半导体激光器、高速半导体激光器和高速探测器。其中大功率激光器代表产品有连续/准连续阵列激光器、高亮度光纤耦合激光     

中国电子科技集团公司第十三研究所光电专业部产品推介

<正>中国电子科技集团公司第十三研究所从事半导体光电器件研制与生产30余年,拥有一条国际先进水平的工艺线,涵盖材料外延、圆片加工和器件封装等全套工艺,主要产品有大功率半导体激光器、高速半导体激光器和高速探测器。其中大功率激光器代表产品有连续/准连续阵列激光器、高亮度光纤耦合激光器和窄脉冲激光器,应用于固态激光器泵浦、光纤激光器泵浦和激光雷达等领域;高速激光器和探测器代表产品有DFB激光器、pin探测器和APD探测器,应用于光纤通     

中国电子科技集团公司第十三研究所光电专业部产品推介

<正>中国电子科技集团公司第十三研究所从事半导体光电器件研制与生产30余年,拥有一条国际先进水平的工艺线,涵盖材料外延、圆片加工和器件封装等全套工艺,主要产品有大功率半导体激光器、高速半导体激光器和高速探测器。其中大功率激光器代表产品有连续/准连续阵列激光器、高亮度光纤耦合激光     

中国电子科技集团公司第十三研究所光电专业部产品推介

<正>中国电子科技集团公司第十三研究所从事半导体光电器件研制与生产30余年,拥有一条国际先进水平的工艺线,涵盖材料外延、圆片加工和器件封装等全套工艺,主要产品有大功率半导体激光器、高速半导体激光器和高速探测器。其中大功率激光器代表产品有连续/准连续阵列激光器、高亮度光纤耦合激光     

Cost-effective chip-on-heat sink leadframe package for 800-Mb/s/lead applications

Chip-on-heat sink leadframe (COHS-LF) packages offer a simple, low-cost chip encapsulation structure with advanced electrical and thermal performance for high-speed integrated circuit applications. The COHS-LF package is a novel solution to the problems of increased power consumption and signal bandwidth demands that result from high-speed data transmission rates. Not only does it offer high thermal and electrical performance, but also provides a low-cost short time-to-market package solution for high-speed applications. In general, there are two main memory packages employed by the most popular high-speed applications, double data rate (DDR) SDRAM. One is the cheaper, higher parasitic leadframe packages, such as the thin small outline packages (TSOPs), and the other is the more expensive, lower parasitic substrate-based packages, such as the ball grid array (BGA). Due to the requirement for higher ambient temperature and operating frequency for high-speed devices, DDR2 SDRAM packages were switched from conventional TSOPs to more expensive chip-scale packages (i.e., BGA) with lower parasitic effects. And yet, by using an exposed heat sink pasted on the surface of the chip and packed in a conventional leadframe package, the COHS-LF is a simpler, lower cost design. Results of a three-dimensional full-wave electromagnetic field solver and SPICE simulator tests show that the COHS-LF package achieves less signal loss, propagation delay, edge rate degradation, and crosstalk than the BGA package. Furthermore, transient analysis using the wideband T-3/spl pi/ models optimized up to 5.6 GHz for signal speeds as high as 800 Mb/s/lead demonstrates the accuracy of the equivalent circuit model and reconfirms the superior electrical characteristics of COHS-LF package.     

SMA同轴封装高速光电探测器

采用自制ＳＭＡ同轴管壳和普通ＴＯ－１８管壳对同型同批的ＩｎＧａＡｓＰＩＮ光电探测器芯片进行了封装，并用自建测试系统对其Ｃ－Ｖ特性和瞬态特性进行了测试比较，结果表明：与普通ＴＯ－１８管壳封装相比，ＳＭＡ同轴管壳封装器件电容减少了约０．４ｐＦ，上升时间ｔｒ由８５ｐｓ减至２５ｐｓ以下，半高全宽ＦＷＨＭ由２１０ｐｓ减至８５ｐｓ，等效－３ｄＢ带宽增至６ＧＨｚ以上，瞬态特性显著改善。     

Speed limitations of multilayer digital packages

The limitations that are imposed on the performance of high-speed digital devices by multilayer ceramic packages are presented. It is demonstrated that the maximum speed of the system is limited by the package ground plane and that a maximum data rate of 11 Gbit/s can be achieved with multilayer packages using 0.75 mu m MESFET devices.<>     

How to choose electromagnetic software

The rapid growth in communication and high-speed electronics industries is demanding more-much more-of electromagnetic simulation software. Here, the authors describe how a range of packages is available not only to predict the electromagnetic behavior of today's very high-speed devices, but also to accurately analyze and help optimize a design before a physical prototype is built     

Microwave Equivalent-Circuit Parameters of Gunn-Effect-Device Packages

The packages in which Gunn-effect devices are commonly mounted are found to have parasitic reactances which are significant at X-band. An accurate knowledge of the package equivalent circuit is essential. Precision measurements in a coaxial system have therefore been made over a very wide range of frequencies, and a consistent equivalent circuit has been derived. This differs somewhat from previously assumed equivalent circuits. The experimental results are analyzed in terms of a theoretical model based on the known structure of the package.     

Mount-independent equivalent circuit of the S4 diode package

Broadband-admittance measurements have been made on dummy S4 diode packages mounted in a coaxial line. By comparing these with the theoretical admittance of a lumped-component equivalent circuit for the package and its mount similar to that of Getsinger, a consistent set of mount-independent equivalent-circuit parameters for the package has been derived.     

High-Reliable and High-Speed 1.3 μm Complex-Coupled Distributed Feedback Buried-Heterostructure Laser Diodes With Fe-Doped InGaAsP/InP Hybrid Grating Layers Grown by MOCVD

In this paper, we report the fabrication of high-reliability and high-speed 1.3 mum complex-coupled distributed feedback (CC-DFB) buried heterostructure (BH) laser diodes (LDs) with Fe-doped InGaAsP/InP hybrid grating layers. High optical coupling coefficient and eminent current confining ability are accomplished by combining the Fe-doped InGaAsP/InP current-blocking-grating (CBG) layers to provide both the distributed-feedback index-and gain-coupling coefficients. Besides, the narrow-stripe BH LDs are implemented by burying the active region with a Fe-doped InP current-blocking layer during the epitaxial regrowth. The fabricated CBG CC-DFB BH LDs at 20degC shows a low threshold current of 5.3 mA, a maximum light output power of 36 mW at 100 mA, a high slope efficiency of 0.41 mW/mA, and a side-mode suppression ratio (SMSR) of 42 dB at twice the threshold. In addition, these LDs exhibit a maximum operation temperature of 125degC, an extremely low threshold current of 15.8 mA at 90degC, a small variation in slope efficient of only -1 dB in the temperature range from 20degC to 80degC, and a characteristic temperature of 77 K and 56 K between 20 degC and 60degC, and 70degC and 120degC, respectively. Furthermore, these 1.3 mum CBG CC-DFB BH LDs exhibit a high-speed characteristic up to 11.8 GHz at room temperature and an estimated median lifetime of more than 1.1 times 10⁵ h or 12.5 years at 5 mW and 85degC.     

Uncooled 1.3-/spl mu/m complex-coupled DFB BH laser diodes with the Fe-doped InGaAsP-InP hybrid current-blocking grating

In this letter, we proposed an alternate method by using the Fe-doped InGaAsP-InP hybrid grating layers to fabricate the 1.3-/spl mu/m current-blocking-grating complex-coupled distributed-feedback (CBG CC-DFB) laser diodes (LDs) grown by metal-organic chemical vapor deposition (MOCVD). By combining the Fe-doped InGaAsP-InP grating layers, the CBG CC-DFB LDs can provide high optical DFB coupling coefficient and high current confining ability. Moreover, the current aperture in the lateral direction can be easily controlled by the self-aligned MOCVD regrowth process. Therefore, the manufacture of CBG CC-DFB buried heterostructure LDs is easy as the ridge-waveguide LDs. The LDs exhibit a low threshold current of 5.3 mA, a high slope efficiency of 0.42 mW/mA, and a stable single mode with a high sidemode suppression ratio of /spl sim/42 dB at two times the threshold (10.5 mA). Even at high temperatures, these LDs still have an extremely low threshold current of 15.8 mA at 90/spl deg/ and a small variation in slope efficient of only -1 dB at the temperatures between 20/spl deg/ and 80/spl deg/. Furthermore, these LDs show a high-speed characteristic of more than 11.8 GHz at 20/spl deg/, which are suitable for 10-Gb/s Ethernet and OC-192 applications.     

A measurement of very fast transition durations due to gapdischarge in air using distributed constant line system

Very fast transition durations (rising time in positive polarity and falling time in negative polarity) due to starting of gap discharge were investigated in time domain. The gap space was set very small for voltages below 1500 V as a simulation of the charged device model (CDM) electrostatic discharge (ESD) and the gap discharge of switch devices. The measurement system consists of a distributed constant line system with a tapered coaxial electrode, which has a matched impedance for the characteristic impedance of the distributed constant line system. The insertion loss of the tapered coaxial electrode was within -3 dB in the frequency range below 4.5 GHz. The atmosphere around the electrode is ordinary air. This experimental system enables one to measure the high-speed transients of about 100 ps due to gap discharge in time domain. As a consequence of the experiment, the relationship between the discharge voltage and transition duration was confirmed. The voltage rise time was slowed down gradually in positive polarity, while the voltage fall time was slowed down remarkably in negative polarity for the 0.1-mm needle     

非同轴微波器件测试夹具的设计与应用

由于非同轴微波器件接口的特殊性,无法直接与同轴接口的矢量网络分析仪相连进行测试,非同轴器件的微波性能测试面临较大的困难,目前,国内非同轴器件的测试技术已严重滞后其设计开发工作。对非同轴微波器件接口进行了深入研究,设计了针对非同轴微波器件测试的分体式夹具,解决了去嵌入技术问题,并以实例验证了该测试装置的正确性。大量测试表...