High power 2 MHz passively Q-switched nanosecond Nd:YVO4/Cr4+:YAG 914 nm laser

We report a high-power, high-repetition-rate end-pumped passively Q-switched Nd:YVO4/Cr4+: yttrium aluminum garnet 914 nm laser. The maximum output power of 3.8 W at 914 nm is achieved at 2 MHz with the absorbed pump power of 25.2 W. The highest single pulse energy of a pulsed 914 nm laser reaches 2.3 μJ with a pulse width of 27.1 ns.     

Diode-end-pumped,electro-optically Q-switched Nd:YVO4 slab laser and its second-harmonic generation

We describe the operation of a near-diffraction-limited, 1,064-nm electro-optically Q-switched Nd:YVO4 slab laser that is end pumped by laser-diode stacks and its efficient second-harmonic generation by using a lithium triborate (LBO) crystal. The energy per pulse of 3.6 and 0.8 mJ and pulse widths of 5 and 13.5 ns were obtained at repetition of 5 and 40 kHz, respectively. With a LBO crystal, a maximum output power of 15.6 W at 532 nm was obtained at the repetition rate of 40 kHz, the corresponding conversion efficiency was 60%, and the pulse width was 11.3 ns. At 10 kHz, the pulse energy of 532 nm was 1.2 mJ, and the pulse width was 5 ns.     

A highly efficient graphene oxide absorber for Q-switched Nd:GdVO4 lasers

We demonstrated that graphene oxide material could be used as a highly efficient saturable absorber for the Q-switched Nd:GdVO4 laser. A novel and low-cost graphene oxide (GO) absorber was fabricated by a vertical evaporation technique and high viscosity of polyvinyl alcohol (PVA) aqueous solution. A piece of GO/PVA absorber, a piece of round quartz, and an output coupler mirror were combined to be a sandwich structure passive component. Using such a structure, 104 ns pulses and 1.22 W average output power were obtained with the maximum pulse energy at 2 μJ and a slope efficiency of 17%.     

Simultaneous Mode Locking in a Diode-Pumped Passively Q-Switched Nd:YVO(4) Laser with a GaAs Saturable Absorber

Simultaneous mode locking and Q switching is accomplished in a diode-pumped Nd:YVO(4)/GaAs laser. The average output power is ~2.0 W at 10.6-W absorbed pump power, and the repetition rate of the Q-switched pulse is ~120 kHz. The mode-locked pulse inside the Q-switched pulse has a repetition rate of ~148 MHz, and its average duration is estimated to be ~100 ps.     

Intracavity frequency doubling and Q switching in diode-laser-pumped Nd:YVO(4) lasers

A highly efficient and compact Nd:YVO(4) laser is proposed. In cw operation, a single-longitudinal-mode output of 95 mW and a multilongitudinal-mode output of 435 mW have been observed at 1.06 μm with a 1-W diode laser. Using a KTP crystal in the short laser cavity, a green output of 105 mW was generated. A Q-switched pulse with a peak power of 230 W and a pulse width of 8 ns was obtained with the intracavity KTP crystal, which was used as both an electro-optic Q switch and a frequency doubler.     

Polarization-resolved study of diode-pumped passively Q-switched Nd:GdVO4 lasers

By using the natural birefringence of an a-cut Nd:GdVO(4) crystal, we experimentally investigate laser operation under different light polarizations (pi- and sigma-polarized emissions) and compare their performance. The laser performance is further compared with a diode-pumped c-cut Nd:GdVO(4) laser of the same parameters. We show experimentally that the c-cut Nd:GdVO(4) laser could have good passively Q-switched performance in a low-pump-power region but is influenced by other intrinsic laser effects, such as the thermally induced cavity losses; its performance is severely degraded under high pump power. The best passively Q-switched performance obtained in our experiments is from the a-cut pi-polarized laser, which gives the narrowest pulse of 5.4 ns with the highest peak power of 20 kW. Our experimental results show that, to achieve the best performance of the passively Q-switched laser operation, an overall consideration of laser parameters is important.     

High-repetition rate Q-switched Nd:YVO4 laser with a composite semiconductor absorber

A diode-pumped Nd:YVO4 laser passively Q switched by a semiconductor absorber is demonstrated. The Q-switched operation of the laser has an average output power of 135 mW with a 1.6 W incident pump power. The minimum pulse width is measured to be about 8.3 ns with a repetition rate of 2 MHz. To our knowledge, this is the first demonstration of a solid-state laser passively Q-switched by such a composite semiconductor absorber.     

Double-end-pumped Nd:YVO4 slab laser at 1064 nm

We demonstrate a high-power laser diode stacks double-end-pumped Nd:YVO4 1064 nm slab laser with a folded stable-unstable hybrid resonator. An output power of 220 W was obtained at the pump power of 490 W with optical conversion efficiency of 44.9%. At the output power of 202 W, the M2 factors in the unstable direction and in the stable direction were 1.7 and 2.3, respectively.     

Theoretical and experimental study on passive mode-locking composite Nd:GdVO4/Nd:GdVO4/Nd:GdVO4 lasers

Stable passive mode-locking multi-segment composite Nd:GdVO₄ lasers with a semiconductor saturable absorber mirror were demonstrated for the first time. For the composite crystals, the output power increased linearly with the increase of the incident pump power, showing excellent thermo-mechanical performances. While for the conventional crystal, power saturation was observed when the incident pump power exceeded 8.79 W. The maximum average output power of 1.465 W was achieved by Nd(0.1%):GdVO₄/Nd(0.5%):GdVO₄/Nd(1%):GdVO₄ composite crystal at an incident pump power of 9.28 W. The largest pulse energy of 14.90 nJ and the highest peak power of 0.53 kW with a pulse duration of 28.0 ps were also obtained by using the same composite crystal, revealing that the multi-segment composite crystal with a proper combination of Nd³⁺-doped concentrations could obtain the optimal laser performance.     

Laser-diode-pumped passively Q-switched Nd:YVO4 green laser with periodically poled KTP and GaAs saturable absorber

A laser-diode-pumped passively Q-switched Nd:YVO₄ green laser with periodically poled KTP (PPKTP) and GaAs saturable absorber has been realized. The dependences of pulse repetition rate, pulse energy, pulse width and peak power on incident pump power for the generated-green-light pulses are measured. At the maximum incident pump power of 4.1 W, the maximum average output power of 113 mW is obtained, corresponding to an optical conversion efficiency of 2.8%. At the same pump power, stable green laser pulses of duration of 44.6 ns and energy of 0.28 µJ are generated at a repetition rate of 403.4 kHz. The coupling wave rate equations for a passively Q-switched laser are also given and the numerical solutions agree with the experimental results.     

Periodic pulse oscillation in an intracavity-doubled Nd:YVO(4) laser

We report periodic pulse oscillation in an intracavity-doubled Nd:YVO(4) laser. The pulse oscillation is caused by alternate oscillation between two modes. We investigated improvement of green-light power with the pulse oscillation in a Nd:YVO(4) laser. The pulse oscillation gave a factor of approximately 2 higher average green-light power than that for cw oscillation at the same pumping power.     

Semianalytical thermal analysis on a Nd:YVO(4) crystal

Based on analytical theory of anisotropy, distributions of thermal distortion and temperature field within a diode-end-pumped rectangular Nd:YVO(4) laser crystal are investigated. A thermal model that matches the actual working state of the laser crystal is established by analyzing the working characteristics of the Nd:YVO(4) laser crystal. A novel method, to the best of our knowledge, is adopted to solve the heat conduction equation of the anisotropic medium. General solutions of the temperature field, thermal strain field, and thermal distortion field of the Nd:YVO(4) crystal are obtained. The effect of anisotropic thermal parameters on the thermal strain field of the Nd:YVO(4) laser crystal is also analyzed quantitatively. Research results show that a maximum temperature rise of 244.9 degrees C and a maximum thermal distortion of 1.99 mum can be obtained in the center of the pump face when the Nd:YVO(4) laser crystal doped with 0.5 at. % Nd(3+) is diode end pumped in the center of the front end face with 15 W output power. This method can be applied to other thermal analyses of laser crystals and offers a theoretical basis to solve thermal problems effectively in the laser system.     

Multipass pumped Nd-based thin-disk lasers: continuous-wave laser operation at 1.06 and 0.9 microm with intracavity frequency doubling

The laser performances of the 1.06 microm (4)F(3/2) --> (4)I(11/2) four-level transition and of the 0.9 microm (4)F(3/2) --> I(9/2)4 quasi-three-level transition were investigated using multipass pumped Nd-based media in thin-disk geometry. When pumping at 0.81 microm into the (4)F(5/2) level, continuous-wave laser operation was obtained with powers in excess of 10 W at 1.06 microm, in the multiwatt region at 0.91 microm in Nd:YVO(4) and Nd:GdVO(4), and at 0.95 microm in Nd:YAG. Intracavity frequency-doubled Nd:YVO(4) thin-disk lasers with output powers of 6.4 W at 532 nm and of 1.6 W at 457 nm were realized at this pumping wavelength. The pumping at 0.88 microm, which is directed into the (4)F(3/2) emitting level, was also employed, and Nd:YVO(4) and Nd:GdVO(4) thin-disk lasers with ~9 W output power at 1.06 microm and visible laser radiation at 0.53 microm with output power in excess of 4 W were realized. Frequency-doubled Nd:vanadate thin-disk lasers with deep blue emission at 0.46 microm were obtained under pumping directly into the (4)F(3/2) emitting level.     

Fluorescence feedback control of an active Q-switched diode-pumped Nd:YVO4 laser

We have implemented active feedback control in a Q-switched diode-pumped Nd:YVO(4) laser by monitoring the fluorescence intensity from the laser crystal. When the initial inversion level indicated by the detected fluorescence has reached a predetermined value, Q switching is initiated. This scheme allowed us to vary the reproducibility of the output pulse peak power and pulse width. The novel active Q-switching approach can reduce the shot-to-shot variations of the output pulse peak power and the pulse width.     

Compact KTA-based intracavity optical parametric oscillator driven by a passively Q-switched Nd:GdVO4 laser

We present a compact and efficient KTA-based intracavity optical parametric oscillator (IOPO) driven by a diode-end-pumped Nd:GdVO(4)/Cr:YAG passively Q-switched laser. At the incident diode pump power of 9.2 W, signal (1.53 microm) and idler (3.47 microm) average output powers of up to 744 and 356 mW, respectively, have been obtained. The total (signal+idler) optical-to-optical conversion efficiency is as high as 12%. By using the knife-edge method, near-diffraction-limited signal and idler beams have been detected, and the M(2) factors are well within 1.2. In addition, based on the ABCD matrix theory, the impact of mode matching and the thermal lens effect on the OPO output have been analyzed.     

Diode-end-pumped passively Q-switched Nd:YAG crystal laser with V:YAG saturable absorber at 1319 and 1338 nm

A diode-end-pumped passively Q-switched Nd:YAG laser with a V:YAG saturable absorber emitting at 1319 and 1338?nm was demonstrated for the first time. A maximum output power of 286?mW was obtained with minimum pulse duration of 13.2?ns and the highest repetition rate was 15?kHz under an incident pump power of 7.7?W. The calculated highest peak power and pulse energy were 2.1?kW and 29?μJ, respectively.     

Single-frequency, thin-film-tuned, 0.6-W, diode-pumped Nd:YVO(4) laser

Application of a metallic thin-film selector to the single-frequency oscillation of a diode-pumped Nd:YVO(4) laser has been investigated theoretically and experimentally. We show that a chromium thin-film selector with a thickness between 8 and 9 nm provides single-frequency output within a power range of 0.6 W. Single-frequency operation, slow smooth tuning, or chirping was realized by the output coupler movement with a piezoceramic transducer. Chirping at a repetition rate of 0.5 kHz in the 0.5-10-GHz range was achieved. Physical and technical limitations caused by the wide-gain bandwidth, thermal effects, and mechanical vibrations of cavity elements are discussed.     

High-power cw 671 nm output by intracavity frequency doubling of a double-end-pumped Nd:YVO4 laser

We report on a high-power (cw) red laser at 671 nm by intracavity frequency doubling of a double-end-pumped 1342 nm Nd:YVO4 laser based on the nonlinear crystal LiB3O5. A red output power of 3.38 W is obtained for a pump power of 27 W, with corresponding optical-to-optical efficiency of 12.5%. The 671 nm beam is nearly diffraction limited.     

Nd3+:Y0.5Gd0.5VO4晶体生长和基本特性

Nd^3 :Y0.5Gd0.5VO4晶体作为一种新的激光材料，可以用中频感应加热提拉法生长。X射线粉末衍射分析表明它的结构与Nd^3 :YVO4晶体结构相同，它的晶格常数介于YVO4和NdVO4晶格常数之间。用ICP光谱法测定晶体中Nd^3 含量为0．8at％，分凝系数为0．8，与Nd^3 :GdVO4晶体中Nd^3 的分凝系数0．78相当；用称重法测定其密度为5．00g／cm^3；用稳态纵向热流法测出其室温热导率为12．5W／mK。实验表明Nd^3 :Y0.5Gd0.5VO4晶体有希望作为高功率ID泵浦激光晶体材料。     

Compact and efficient Nd:YVO 4 laser that generates a tunable single-frequency green output

We demonstrate 250 mW of single-frequency 532-nm output from a simple intracavity-doubled Nd:YVO(4) laser, pumped with 1.2 W from a fiber-coupled diode laser. The laser can be frequency chirped smoothly over ~17 GHz while maintaining a single-frequency green output of greater than 200 mW. A short Fabry-Perot cavity is used, and single-frequency operation is enforced by means of a birefringent filter that utilizes the birefringence of both the KTP doubling crystal and the Nd:YVO(4) laser crystal with polarization-dependent loss from a glass Brewster plate combined with polarization-dependent gain from the laser crystal.