基于非对称量子阱的太赫兹波调制器

主要研究了一个特殊的GaAs/AlGaAs非对称量子阱中的线性和三阶非线性太赫兹波吸收系数和介质折射率的相对改变。首先利用量子力学中的密度矩阵算符理论和迭代方法导出了线性和三阶非线性光吸收系数和相对折射率改变的表达式,然后以典型的阶梯型量子阱材料为例做了数值计算。计算表明,基于泵浦光场和偏置电压控制的太赫兹波调制器不仅可以做太赫兹波开关,还可以灵活地调制太赫兹波信号的强度和相位,方便实用。     

一种特殊的非对称量子阱中的光整流效应

运用量子力学密度矩阵算符理论，推导出在一种特殊非对称量子阱中的光整流系数的解析表达式．最后利用典型的GaAs／A1GaAs非对称量子阱进行数值计算，得到了系统的非线性光整流效应和量子阱的非对称性以及入射光子能量之间的变化规律，并在此特殊量子阱中得到了较大的光整流系数，从而为实验上制作较好的非线性材料提供了一种可行的途径。     

有强内电场的GaN-基阶梯量子阱中的线性与非线性光吸收

采用密度矩阵方法,考察了带强内建电场GaN-基阶梯量子阱中的线性与非线性光吸收系数.基于能量依赖的有效质量方法,在考虑了带的非抛物性情况下,推导了结构中的精确解析的电子本征态,给出了系统中简单解析的线性与非线性光吸收系数表达式.以AlN/GaN/AlxGa1-xN/AlN阶梯量子阱为例进行了数值计算.结果发现阶梯量子阱的阱宽Lw、阶梯垒宽Lb、阶梯垒的掺杂浓度x的减小将提高体系的吸收系数.而且,随着Lw,Lb和x减小,吸收光子的能量有明显的蓝移,总吸收系数的半宽度及饱和吸收强度均减小.计算获得的部分结果与最近的实验观察完全一致.     

有强内电场的GaN-基阶梯量子阱中的线性与非线性光吸收（英文）

采用密度矩阵方法,考察了带强内建电场GaN-基阶梯量子阱中的线性与非线性光吸收系数.基于能量依赖的有效质量方法,在考虑了带的非抛物性情况下,推导了结构中的精确解析的电子本征态,给出了系统中简单解析的线性与非线性光吸收系数表达式.以AlN/GaN/AlxGa1-xN/AlN阶梯量子阱为例进行了数值计算.结果发现阶梯量子阱的阱宽Lw、阶梯垒宽Lb、阶梯垒的掺杂浓度x的减小将提高体系的吸收系数.而且,随着Lw,Lb和x减小,吸收光子的能量有明显的蓝移,总吸收系数的半宽度及饱和吸收强度均减小.计算获得的部分结果与最近的实验观察完全一致.     

ZnCdSe—ZnSe／CaF2多量子阱中的三阶非线性

我们首次利用Ｚ－扫描技术在室温下研究了ＺｎＣｄＳｅ－ＺｎＳｅ／ＣａＦ２多量子了进中的三阶非线性，得到非线性系数ｎ２为－４．４６×１０＾－８ｅｓｕ。其主要非线性机理归结为ＺｎＣｄＳｅ－ＺｎＳｅ／ＣａＦ２多量子阱中的带填充效应。     

双曲型量子阱中非线性光学吸收率的计算

量子阱中的非线性光学效应因其潜在的实用价值而引起了人们的广泛的关注,而量子阱内带间的光学吸收问题对研究远红外光学探测器等光电子器件具有重要的理论指导意义.用量子力学中的密度矩阵算符理论导出了双曲型量子阱中的线性与三阶非线性光学吸收系数的表达式.因双曲型量子阱中有一个可调参数,随着参数的增加,阱宽将相应增加,因此势阱的形状以及阱内的非线性光学吸收率将随参数变化而发生规律性的变化,并且当入射光强增强到一定程度会出现较强的饱和吸收现象,通过对这些规律的研究从而为实验研究提供了必要的理论依据.     

电场对非对称半抛物量子阱中的子带内跃迁引起的线性与非线性折射率改变的影响

利用量子力学中密度矩阵及谐振子变换与数值求解相结合的方法,理论考察了带偏置电场的非对称半抛物量子阱中的子带内跃迁引起的线性与非线性折射率改变特性．以GaAs材料参数计算了总折射率改变对入射光的强度、半抛物量子阱受限势频率、外加直流电场强度的依赖关系．结果发现,总折射率改变敏感地依赖于这些因素．     

正切平方势阱中线性和三阶非线性光学吸收系数的计算

研究了正切平方势阱中的子带光吸收,用量子力学中的密度矩阵算符理论和迭代法推导出了正切平方势阱中线性和三阶非线性光学吸收系数的解析表达式,并以典型的GaAs/AlGaAs正切平方量子阱为例进行数值计算。计算结果表明,该势阱中的势阱宽度b、势阱深度V₀和入射光强I对吸收系数有很大影响。随着势阱宽度b的增加和势阱深度V₀的减小,总吸收系数的峰值减小并且向低能方向移动。随着入射光强I的增加,总吸收系数会减小,出现了光饱和吸收现象,同时吸收谱线的线宽随着入射光强的增大而增大。     

非对称耦合量子阱ZnCdSe/ZnSe的喇曼散射谱与非线性光学特性

采用荧光光谱和喇曼散射谱对非对称Ⅱ一Ⅵ族耦合多量子阱Zn1-xCdxSe／ZaSe的结构进行了表征，并对它的非线性光学特性进行了研究。实验中观察到了比较明显的量子阱荧光峰：在喇曼散射谱中观察到了分别对应于与ZnCdSe窄阱和宽阱的一级限制光学模LO1(Lowe Well)和LOI(Wide Well)，及对应于ZnSe／GaAs界面的声子和等离子体的耦合模。实验发现二次谐波信号的强度随着阱间耦合的增强而增强，说明非对称量子阱(AQW)的耦合效应存在一阈值．与理论结果相一致。     

抛物势对GaAs非对称半指数量子阱中极化子基态能量的影响

探究了非对称抛物受限势对GaAs非对称半指数量子阱中弱耦合极化子性质的影响。采用线性组合算符方式和两次幺正变换,导出了GaAs非对称半指数量子阱中弱耦合极化子的基态能量随x轴、y轴方向的非对称抛物受限势的受限强度ω_x、ω_y和非对称半指数受限势的两个正参量U_0、σ的变化情况。对GaAs半导体进行了数值计算,结果表明非对称半指数量子阱中弱耦合极化子的基态能量E_0是参量U_0的增函数,而它是另一个参量σ的减函数。非对称抛物受限势的影响表现为基态能量E_0随x轴和y轴方向的非对称抛物受限势的受限强度ω_x和ω_y的增加而迅速增大,表示出量子阱独特的量子尺寸限制效果。     

电子-声子相互作用对非对称Morse势阱中光整流效应的影响

从理论上研究了电声相互作用对Morse势阱中光整流效应的影响，首先利用微扰论的方法求解在考虑电声相互作用时Morse量子阱的波函数和能级, 然后采用密度矩阵方法和迭代法得到光整流系数，最后以典型的GaAs/AlGaAs Morse 势阱为例进行数值计算。数值结果表明在考虑电声相互作用后，获得的光整流系数比仅考虑电子情况的大15%～30%左右。并且电声相互作用使光整流系数峰值向高能方向偏移。因此要得到比较精确的结果，有必要考虑电声相互作用的影响。     

Design of GaAs/AlxGa1?xAs asymmetric quantum wells for THz-wave by difference frequency generation

The energy levels, wave functions and the second-order nonlinear susceptibilities are calculated in GaAs/Al0.2Ga0.8As/Al0.5Ga0.5As asymmetric quantum well (AQW) by using an asymmetric model based on the parabolic and non-parabolic band. The influence of non-parabolicity can not be neglected when analyzing the phenomena in narrow quantum wells and in higher lying subband edges in wider wells. The numerical results show that under double resonance (DR) conditions, the second-order difference frequency generation (DFG) and optical rectification (OR) generation susceptibilities in the AQW reach 2.5019 mm/V and 13.208 mm/V, respectively, which are much larger than those of the bulk GaAs. Besides, we calculate the absorption coefficient of AQW and find out the two pump wavelengths correspond to the maximum absorption, so appropriate pump beams must be selected to generate terahertz (THz) radiation by DFG.     

正切平方势阱中光学吸收系数的研究

在量子力学框架内,利用正切平方势把电子的Schrodinger方程化为了超几何方程,并用超几何函数严格求解了电子的本征值和本征函数。利用量子力学中的密度矩阵算符理论导出了正切平方势阱中的线性与三阶非线性光学吸收系数的解析表达式。计算了该系统中的线性与非线性光学吸收系数的大小,讨论了影响吸收系数变化的因素。文章以典型的AlGaAs/GaAs 势阱为例作了数值计算,数值计算结果表明,势阱的形状和入射光强对光学吸收系数的变化有着重要的影响。     

Intersubband transitions in quantum wells as sources of Thz radiation

A suitable engineered asymmetric double quantum well can be designed as a three level system, in which intersub-band transitions between these three states give rise to Terahertz radiation. Due to the lack of sources in this region of the electromagnetic spectrum, this subject is of technological interest. We study in this work two different tunneling processes, which can be observed in this device: coherent and resonant. The latter is related to incoherent processes that can be applied for devices filling the Terahertz gap. The absorption spectra of superlattices built from asymmetric double quantum wells are calculated and a possible population inversion mechanism is proposed. On the other hand, an ultrafast optical excitation creates in an asymmetric double quantum well a macroscopically coherent superposition of the two excited conduction sub-bands. The components eigenstates of the wave packet subsequently evolve at different rate leading to quantum beats and therefore to coherent tunneling between the two wells.     

半抛物量子阱中的线性与非线性光学吸收系数

采用密度矩阵与迭代处理的方法,给出了计算施加电场的半抛物量子阱(QWs)系统中的线性与非线性光学吸收系数的详细过程.并且推导了此系统中的简单解析的线性与非线性光学吸收系数.对GaAs材料构成的QWs进行了数值计算.结果显示,系统中的线性与非线性光学吸收系数敏感地依赖于外加的电场强度、QWs的受限势频率以及入射光的强度.     

Optical effects based on intersub-band-transitions in quantum wells

Unipolar devices based on intersub-band-transition have been developed in the last decade [Appl. Phys. Lett. 65 (1994) 2901]. However, this technique will not be directed applicable for the longer wavelengths corresponding to Tetrahertz frequencies. In this work we analyze a THz device based on the intersub-band-transitions of an asymmetric double quantum well. We first study the intersub-band optical absorption in superlattice made of asymmetric double quantum wells tailored as a three level system. By applying an external electric field we obtain the Wannier-Stark ladder and can tune the transition energies between the sub-bands to reach the THz absorption between the two excited sub-bands. Although the dipole moments are big, the relative THz absorption to the other frequencies is small. However, reported lifetimes for this system encourage the possibility of getting population inversion, which is the main condition to design a laser. With this goal, it is presented a detailed study of the geometric design of the asymmetric double quantum well by performing an accurate calculation of the energies and wave functions, the dipole moments and the electron-LO-phonon interaction form factors, which are important ingredients of the scattering rates results. Furthermore, we analyze the role of electron-LO-phonon scattering in THz devices.     

Zero chirp asymmetric Fabry-Perot electroabsorption modulator using coupled quantum wells

A zero-chirp asymmetric Fabry-Perot reflection InGaAs QW modulator is created by placing coupled quantum wells in the intrinsic region of a reverse-biased p-i-n diode asymmetric Fabry-Perot cavity. Unlike single quantum wells which necessarily produce chirping during the switching cycle, these coupled quantum wells provide large absorption changes with zero refractive index changes over the entire voltage swing; the resultant cavity structure shows reflectivity changes with zero experimental phase change over the same voltage range. The tradeoff in reflectivity change required in order to obtain zero chirp is described. This tradeoff is a result of the different switching mechanisms used in coupled quantum wells versus single quantum wells.