The stability of the CNT/Ni field emission cathode fabricated by the composite plating method

A novel composite plating method has been developed for the fabrication of carbon nanotube/Ni (CNT/Ni) field emission cathode. The field emission properties of the initial CNT/Ni field emitter show a low turn-on electric field E_on of about 1.1 V/μm with an emission current density of 1 μA/cm², and a low threshold electric field E_th of about 1.7 V/μm with an emission current density of 1 mA/cm². After performing a stability test with a high emission current density in high vacuum, the corresponding microstructure and the degree of graphitization of the CNT/Ni field emitter were measured by using scanning electron microscopy and Raman spectroscopy. We found that the degree of graphitization slowly decreases with the duration time t_FE of the stability test, the size of small rod-like CNT/Ni composite structures in the film increases with t_FE, and obvious cracks appear in the film as t_FE is larger than 60 h. The degradation of the field emission properties may be explained by the Joule heating effect on the CNT/Ni field emitter under high emission current density.     

Electron field emission from filtered arc deposited diamond-like carbon films using Au and Ti layers

In this work, tetrahedral diamond-like carbon (DLC) films are deposited on Si, Ti/Si and Au/Si substrates by a new plasma deposition technique — filtered arc deposition (FAD). Their electron field emission characteristics and fluorescent displays of the films are tested using a diode structure. It is shown that the substrate can markedly influence the emission behavior of DLC films. An emission current of 0.1 μA is detected at electric field E_DLC/Si=5.6 V/μm, E_DLC/Au/Si=14.3 V/μm, and E_DLC/Ti/Si=5.2 V/μm, respectively. At 14.3 V/μm, an emission current density J_DLC/Si=15.2 μA/cm², J_DLC/Au/Si=0.4 μA/cm², and J_DLC/Ti/Si=175 μA/cm² is achieved, respectively. It is believed that a thin TiC transition layer exists in the interface between the DLC film and Ti/Si substrate.     

Properties of a field emission lighting plane employing highly crystalline single-walled carbon nanotubes fabricated by simple processes

We developed a new cathode for a visible ray flat plane-emission device formed from a mixture of highly crystalline single-walled carbon nanotubes (SWNTs) dispersed into an organic In₂O₃–SnO₂ precursor solution and a non-ionic surfactant. A thin film field emission cathode having highly homogeneously dispersed SWNTs was able to be fabricated with low driving voltage, high electron emission homogeneity in the plane, and high brightness efficiency by employing a simple scratching process for the film.The turn-on field of a diode using the optimized cathode was 1.2 V/μm, with the brightness homogeneity in that plane being within 5% against the averaged brightness in the lighting plane. Favorable brightness homogeneity from the lighting device to control the content of SWNTs in the coated film was achieved by employing highly crystalline SWNTs. Furthermore, brightness efficiency and emission life-time, which are important factors when comparing luminance devices, totaled more than 70 lm/W and over 5000 h until reaching the half time against the initial field emission current density.This flat plane-emission device has the potential to provide a new approach to lighting in everyday life as it contributes to energy saving through its low power consumption.     

High-current field emission of point-type carbon nanotube emitters on Ni-coated metal wires

The fabrication and field emission characteristics are reported for point-type carbon nanotube (CNT) emitters formed by transferring a CNT film onto a Ni-coated Cu wire with a diameter of 1.24 mm. A Ni layer plays a role in enhancing the adhesion of CNTs to the substrate and improving their field emission characteristics. On firing at 400 °C, CNTs appear to directly bonded to a Ni layer. With a Ni layer introduced, a turn-on electric field of CNT emitters decreases from 1.73 to 0.81 V/μm by firing. The CNT film on the Ni-coated wire produces a high emission current density of 667 mA/cm² at quite a low electric field of 2.87 V/μm. This CNT film shows no degradation of emission current over 40 h for a current density of 60 mA/cm² at electric field of 6.7 V/μm. X-ray imaging of a printed circuit board with fine features is demonstrated by using our point-type CNT emitters.     

Electron field emission properties on UNCD coated Si-nanowires

The electron field emission (EFE) properties of Si-nanowires (SiNW) were improved by coating a UNCD films on the SiNWs. The SiNWs were synthesized by an electroless metal deposition (EMD) process, whereas the UNCD films were deposited directly on bare SiNW templates using Ar-plasma based microwave plasma enhanced chemical vapor deposition (MPE–CVD) process. The electron field emission properties of thus made nano-emitters increase with MPE–CVD time interval for coating the UNCD films, attaining small turn-on field (E₀ = 6.4 V/μm) and large emission current density (J_e = 6.0 mA/cm² at 12.6 V/μm). This is presumably owing to the higher UNCD granulation density and better UNCD-to-Si electrical contact on SiNWs. The electron field emission behavior of these UNCD nanowires emitters is significantly better than the bare SiNW ((E₀)_SiNWs = 8.6 V/μm and (J_e)_SiNWs < 0.01 mA/cm² at the same applied field) and is comparable to those for carbon nanotubes.     

Growth and electron field emission properties of ultrananocrystalline diamond on silicon nanostructures

The electron field emission (EFE) properties of Si nanostructures (SiNS), such as Si nanorods (SiNR) and Si nanowire (SiNW) bundles were investigated. Additionally, ultrananocrystalline diamond (UNCD) growth on SiNS was carried out to improve the EFE properties of SiNS via forming a combined UNCD/SiNS structure. The EFE properties of SiNS were improved after the deposition of UNCD at specific growth conditions. The EFE performance of SiNR (turn-on field, E₀ = 5.3 V/μm and current density, J_e = 0.53 mA/cm² at an applied field of 15 V/μm) was better than SiNW bundles (turn-on field, E₀ = 10.9 V/μm and current density, J_e < 0.01 mA/cm² at an applied field of 15 V/μm). The improved EFE properties with turn-on field, E₀ = 4.7 V/μm, current density, J_e = 1.1 mA/cm² at an applied field of 15 V/μm was achieved for UNCD coated (UNCD grown for 60 min at 1200 W) SiNR. The EFE property of SiNW bundles was improved to a turn-on field, E₀ = 8.0 V/μm, and current density, J_e = 0.12 mA/cm² at an applied field of 15 V/μm (UNCD grown for 30 min at 1200 W).     

Arc synthesis of double-walled carbon nanotubes in low pressure air and their superior field emission properties

Double-walled carbon nanotubes (DWCNTs) have been effectively synthesized by direct current (DC) arc discharge in low pressure air using a mixture of Fe catalyst and FeS promoter. Compared with conventional arc methods, this method is easier to implement without using expensive high purity gas sources. A tip structural DWCNT film has been successfully fabricated by a mixing process of electrophoresis, electroplating and electrocorrosion. The field emission properties of tip structural nanotube film are significantly increased compared with DWCNT film fabricated by electrophoresis. The turn-on electric field E_to decreases from 1.25 to 0.92 V/μm, the low threshold electric field E_th decreases from 1.45 to 1.13 V/μm, and the field enhancement factor β increases from about 2210 to 4450. Meanwhile, this tip structural CNT film shows remarkably stable within 2% fluctuations for several hours. The high-performance emitter material and preparation technologies are both easy to scale up to large areas.     

The effect of gamma irradiation on mechanical,thermal and morphological properties of glass fiber reinforced polyethylene waste/reclaim rubber composites

Composites of waste polyethylene (WPE), collected from municipal solid waste/recycled waste rubber powder (RWRP) reactive compatibilizing agent, maleic anhydride (MA) and glass fiber (GF) up to 20 wt%, prepared by melting and irradiated with gamma-rays up to 150 kGy have been studied. Tensile strength (T_S), elongation at break (E_b), elastic modulus, hardness, thermal and morphological parameters of the irradiated composites were investigated. The examined mechanical properties have been found to improve largely with filler content. Interesting E_b behavior has been detected for the irradiated composites loaded up to ∼10 wt% GF and has been basically discussed in view of matrix crystallinity and morphology. TGA thermograms of unirradiated composites revealed enhanced thermal stability than that reported for the blend whereas comparatively slight improvement has been demonstrated by irradiation. Whereby insignificant alteration in T_m values was observed by loading or irradiation, yet ΔH_m maximum of 3.41 J/g, indicated for the 5 wt% GF irradiated composite with an integral dose of 75 kGy, emphasizes the influence of the relatively moderate load and dose levels on matrix stability. The phenomenon has been confirmed by the respective SEM micrographs.     

Electrochemical performance of intermediate temperature micro-tubular solid oxide fuel cells using porous ceria barrier layers

We describe the manufacture and electrochemical characterization of micro-tubular anode supported solid oxide fuel cells (mT-SOFC) operating at intermediate temperatures (IT) using porous gadolinium-doped ceria (GDC: Ce_0.9Gd_0.1O_2−δ) barrier layers. Rheological studies were performed to determine the deposition conditions by dip coating of the GDC and cathode layers. Two cell configurations (anode/electrolyte/barrier layer/cathode): single-layer cathode (Ni–YSZ/YSZ/GDC/LSCF) and double-layer cathode (Ni–YSZ/YSZ/GDC/LSCF–GDC/LSCF) were fabricated (YSZ: Zr_0.92Y_0.16O_2.08; LSCF: La_0.6Sr_0.4Co_0.2Fe_0.8O_3−δ). Effect of sintering conditions and microstructure features for the GDC layer and cathode layer in cell performance was studied. Current density–voltage (j–V) curves and impedance spectroscopy measurements were performed between 650–800 °C, using wet H₂ as fuel and air as oxidant. The double-cathode cells using a GDC layer sintered at 1400 °C with porosity about 50% and pores and grain sizes about 1 μm, showed the best electrochemical response, achieving maximum power densities of up to 160 mW cm⁻² at 650 °C and about 700 mW cm⁻² at 800 °C. In this case GDC electrical bridges between cathode and electrolyte are preserved free of insulating phases. A preliminary test under operation at 800 °C shows no degradation at least during the first 100 h. These results demonstrated that these cells could compete with standard IT-SOFC, and the presented fabrication method is applicable for industrial-scale.     

Mechanical characterization of a polysiloxane-derived SiOC glass

Silicon oxycarbide glass with the composition Si_1.0O_1.6C_0.8 was synthesized from a commercial polysiloxane by polymer pyrolysis. Dense SiOC samples were obtained by cross linking of the polysiloxane followed by warm pressing to form cylindrical samples and subsequent pyrolysis of the shaped polymer at 1100 °C in Ar. Hardness (H), Young's modulus (E) and Poisson's ratio (ν) of the as-prepared SiOC glass were evaluated from indentation studies and from acoustic microscopy. Indentation studies showed that E depends on the applied load and amounts to 90 GPa for low load and to 180 GPa for high load. Average values of 6.4 and 101 GPa were obtained for H and E, respectively, by the Vickers indentation method. Acoustic microscopy analysis yielded values of 96 GPa and 0.11 for E and ν, respectively. Compared to vitreous silica, the Young's modulus of the SiOC glass is about 1.3–1.5 times higher. To the knowledge of the present authors, the measured Poisson's ratio (ν = 0.11) is the lowest reported so far for glasses and polycrystalline ceramics.     

Up-conversion luminescence and optical thermometry properties of transparent glass ceramics containing CaF2:Yb3+/Er3+ nanocrystals

A series of Yb³⁺/Er³⁺ codoped transparent oxyfluoride glass ceramics with various amounts of Yb³⁺ have been successfully fabricated and characterized. Under 980 nm laser prompting, the samples produce intense red, green and blue up-conversion emissions, and the emission intensities increase with Yb³⁺ concentration and heat treatment temperature. Before losing good transparency in the visible region, optimum emission intensities are obtained for the sample with 25 mol% of Yb³⁺ at a heat treatment temperature of 680 °C. A possible up-conversion mechanism is proposed from the dependence of emission intensities on pumping power. The fluorescence intensity ratio between the two thermally coupled levels ²H_11/2 versus ⁴S_3/2 was measured with the laser output power of 57 mW to avoid the possible laser induced heating effect. The fluorescence intensity ratio values in the temperature range from 295 K to 723 K can be well fitted with the equation: A exp (−∆E/k_BT), where A = 6.79 and ∆E=876 cm⁻¹. The relative temperature sensitivity at 300 K was evaluated to be 1.4% K⁻¹. All the results suggest that the Yb³⁺/Er³⁺ codoped CaF₂ glass ceramics is an efficient up-conversion material with potential in optical fiber temperature sensing.     

Sintering behaviour of a glass obtained from MSWI ash

The sintering behaviour of a glass obtained by Municipal Solid Waste Incinerator (MSWI) bottom ash (WG) was investigated and compared with a Na₂O–MgO–CaO–SiO₂ composition (CG). The sintering activation energy, E_sin, and the energy of viscous flow, E_η, were evaluated by dilatomeric measurements at different heating rates. The formation of crystalline phases was evaluated by Differential Thermal Analysis (DTA) and X-Ray Diffraction (XRD), and observed by Scanning Electron Microscopy (SEM) and Transition Electron Microscopy (TEM). In CG, the sintering started at ≈10¹³ dPa s viscosity and E_sin (245 kJ/mol) remains constant in the measured range of shrinkage, up to 9%. In WG the densification started at ≈10¹¹ dPa s, E_sin resulted to be 395 kJ/mol up to 5% shrinkage, 420 kJ/mol at 8% and 485 kJ/mol at 10% shrinkage. The sintering rate decreased due to the beginning of the pyroxene formation and the densification stopped in the temperature range 1073–1123 K after formation of 5 ± 3% and 13 ± 3% crystal phase, at 5 and 20 K/min, respectively. Higher densification and improved mechanical properties were obtained by applying the fast heating rate, i.e. 20 K/min.     

Relationship between mechanical properties and coefficient of friction of sputtered a-C/Cu composite thin films

The article reports on properties of a-C films containing different amount of Cu. Films were sputtered by unbalanced magnetron from a graphite target with Cu fixing ring in argon under different deposition conditions. Relationships between the structure, mechanical properties, macrostress σ and coefficient of friction (CoF) μ of a-C/Cu films sputtered on Si substrates were investigated in detail. Besides, a special attention was concentrated on investigation of the effect of a deposition rate a_D of the a-C/Cu film on its hardness H and macrostress σ. Four main issues were found: (1) the addition of Cu into a-C film strongly influences its structure and mechanical properties, i.e. the hardness H, effective Young's modulus E⁎ macrostress σ and CoF, and makes it possible to form electrically conductive films; here E⁎ =  E / (1 − ν²), E is the Young's modulus, and ν is the Poisson's ratio, (2) the hardness H and compressive macrostress σ of the a-C/Cu film decrease with increasing a_D due to decreasing of total energy E_T delivered to the film during its growth, (3) hard a-C/Cu films with low value of CoF (μ ≈ 0.1) can be sputtered at high deposition rates a_D ranging from ~ 10 to ~ 80 nm/min, and (4) CoF decreases with increasing (i) hardness H and (ii) resistance of film to plastic deformation characterized by the ratio H³/E⁎² but only in the case when compressive macrostress σ is low.     

Reaction sequence and electrochemical properties of lithium vanadium oxide cathode materials synthesized via a hydrothermal reaction

Lithium vanadium oxide (Li_1+xV₃O₈) cathode materials were synthesized via a simple hydrothermal reaction followed by heat treatment at 300 or 400 °C. From both XRD and TG/DTA analyses, a detailed comprehensive reaction sequence for the formation of single-phase LiV₃O₈ is proposed. Li_1+xV₃O₈ (x=0.2) materials with different thermal histories show clear differences in morphologies and sizes, although they maintained an impurity-free single phase regardless of thermal treatment. Samples that were heat treated at 300 °C show an agglomerated particle shape with many nanorod-like Li_1+xV₃O₈ particles over the surface that enhance the surface area of the particles. In contrast, samples treated at 400 °C have a bi-modal particle size distribution with improved crystallinity. Such differences in morphologies clearly influence the electrochemical properties. LiV₃O₈ cathode materials that were treated at 300 and 400 °C showed initial discharge capacacities of 346.52 and 261.23 mA h/g, respectively, and discharge capacities of 78.66 and 157.35 mA h/g, respectively, after 100 cycles. The improved cyclability of LiV₃O₈ cathode materials that were heat treated at 400 °C is due to their increased crystallinity and structural stability.     

Growth of a three-dimensional complex carbon nanoneedle electron emitter for fabrication of field emission device

A three-dimensional complex carbon nanoneedle electron emitter film with high emission current density at low electric field has been developed by a direct current plasma chemical vapor deposition system. Sample grown on stainless wire substrate pretreated with the mixing powders of diamond and molybdenum exhibited novel film morphology. The scanning electron microscopy image taken from this film indicated a three-dimensional complex nanostructure emitter, the center of which was a carbon nanoneedle, and many small carbon nanowalls growing from the needle. The density of unique nanostructure emitters was about 5 × 10⁷/cm². The I–V characteristic addressed an emission current density of 251 mA/cm² at the electric field of 2.2 V/μm, and the field emission current was stable, making it possibly suitable for developing field emission device.     

Enhancement of electrical properties of (Gd,V) co-doped BiFeO3 thin films prepared by chemical solution deposition

Pure BiFeO₃ (BFO) and (Bi_0.9Gd_0.1)(Fe_0.975V_0.025)O_3+δ(BGFVO) thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method. The improved electrical properties were observed in the BGFVO thin film. The leakage current density of the co-doped BGFVO thin film showed two orders lower than that of the pure BFO, 8.1×10^?5 A/cm² at 100 kV/cm. The remnant polarization (2P_r) and the coercive electric field (2E_c) of the BGFVO thin film were 54 μC/cm² and 1148 kV/cm with applied electric field of 1100 kV/cm at a frequency of 1 kHz, respectively. The 2P_r values of the BGFVO thin film show the dependence of measurement frequency, and it has been fairly saturated at about 30 kHz.     

Effect of H2/Ar plasma on growth behavior of ultra-nanocrystalline diamond films: The TEM study

Incorporation of H₂ species into Ar plasma was observed to markedly alter the microstructure of diamond films. TEM examinations indicate that, while the Ar/CH₄ plasma produced the ultrananocrystalline diamond films with equi-axed grains (~ 5 nm), the addition of 20% H₂ in Ar resulted in grains with dendrite geometry and the incorporation of 80% H₂ in Ar led to micro-crystalline diamond with faceted grains (~ 800 nm). Optical emission spectroscopy suggests that small percentage of H₂-species (< 20%) in the plasma leads to partially etching of hydrocarbons adhered onto the diamond clusters, such that the C₂-species attach to diamond surface anisotropically, forming diamond flakes, which evolve into dendrite geometry. In contrast, high percentage of H₂-species in the plasma (80%) can efficiently etch away the hydrocarbons adhered onto the diamond clusters, such that the C₂-species can attach to diamond surface isotropically, resulting in large diamond grains with faceted geometry. The field needed to turn on the electron field emission for diamond films increases from E₀ = 22.1 V/μm (J_e = 0.48 mA/cm² at 50 V/μm applied field) for 0% H₂ samples to E₀ = 78.2 V/μm (J_e < 0.01 mA/cm² at 210 V/μm applied field) for 80% H₂ samples, as the grains grow, decreasing the proportion of grain boundaries.     

Low firing and microwave dielectric properties of BaTi4O9 with B2O3–ZnO–La2O3 glass addition

A high-Q low firing ceramics material was fabricated from a composite of 80 wt% of BaTi₄O₉ powder and 20 wt% of B₂O₃–ZnO–La₂O₃ glass flux. The sample sintered at 900 °C for 3 h had the maximum bulk density. B₂O₃–ZnO–La₂O₃ glass was found to act as the sintering aid. The material sintered at 900 °C for 3 h consists of BaTi₄O₉, LaBO₃, an unidentified crystal phase and residual glass phase, and possesses excellent microwave dielectric properties: permittivity k ≈ 27, quality factor Q × f ≈ 20,000 GHz, temperature coefficient of resonant frequency τ_f ≈ 6.5 ppm/°C.     

Structural and ferroelectric properties of chemical solution deposited (Nd,Cu) co-doped BiFeO3 thin film

Effects of (Nd, Cu) co-doping on the structural, electrical and ferroelectric properties of BiFeO₃ polycrystalline thin film have been studied. Pure and co-doped thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method. Significant improvements in the electrical and the ferroelectric properties were observed for the co-doped thin film. The remnant polarization (2P_r) and the coercive field (2E_c) of the co-doped thin film were 106 μC/cm² and 1032 kV/cm at an applied electric field of 1000 kV/cm, respectively. The improved properties of the co-doped thin film could be attributed to stabilized perovskite structures, reduced oxygen vacancies and modified microstructures.     

Enhanced ferroelectric properties of 0.95Pb(Sc0.5Ta0.5)O3–0.05PbTiO3 thin films with Pb(Zr0.52,Ti0.48)O3 seed layer

0.95Pb(Sc_0.5Ta_0.5)O₃–0.05%PbTiO₃ (PSTT5) thin films with and without a Pb(Zr_0.52,Ti_0.48)O₃ (PZT52/48) seed layer were deposited on Pt/Ti/SiO₂/Si(1 0 0) substrates by RF magnetron sputtering. X-ray diffraction patterns indicate that the PSTT5 film with a PZT52/48 seed layer exhibited nearly pure perovskite crystalline phase with highly (4 0 0)-preferred orientation. Piezoresponse force microscopy observations reveal that a large out-of-plane spontaneous polarization exists in the highly (4 0 0)-oriented PSTT5 thin film. The PSTT5/PZT(52/48) possesses good ferroelectric properties with large remnant polarization P_r (12 μC/cm²) and low coercive field E_c (110 kV/cm). Moreover, The perfect butterfly-shaped capacitance–voltage characteristic curve and the relative dielectric constant as high as 733 is obtained in this PSTT5 thin film at 100 kHz.