Design of Ka-band Monolithic Image Rejection Mixer

In this paper, a 30–40 GHz monolithic image rejection mixer is described. The mixer employs two drain LO injection mixer cells, which can perform well even with zero drain bias voltage. Also it employs Lange Coupler for RF quadrature signal generation. The mixer is fabricated by a commercial 0.18-μm pseudomorphic high electron-mobility transistor (pHEMT) process. It achieves image rejection ratio of more than 20.4 dB and conversion loss of less than 12.6 dB in the frequency range of 30 to 38 GHz.     

DESIGN OF MICROSTRIP LANGE COUPLER BASED ON EM-ANN MODEL

Electromagnetically trained artificial neural network (EM-ANN) model for microstrip Lange Coupler is presented. Full-wave EM analysis software is employed to characterize the Lange Coupler. The EM-ANN model is then designed using physical parameters as inputs and S-parameters as outputs. Once the EM-ANN model is trained, it can be used to find the optimal physical structure of the Lange Coupler for a given application using optimization technique. A Ka-band microstrip Lange Coupler is designed by this method. The simulated results of the Lange Coupler show that the insert loss is better than ?3.64 dB; the amplitude balance is less than 0.55 dB and the phase balance is less than 0.52°from the 90°phase difference over the 30 to 40 GHz frequency range.     

四次谐波镜像抑制混频器中无源部分的设计

本文介绍了四次谐波镜像抑制混频器中无源部分的设计,无源部分包括了双巴伦和兰格电桥。通过ADS 软件进行相关的仿真,最终实现了巴伦在频段7.9~9.5GHz 的幅度不平衡度小于0.2dB,相位不平衡度小于1°,在中心频率8.7GHz 的插损约为7.3 dB;兰格电桥在频段30~40GHz 的幅度不平衡度小于0.3 dB,相位不平衡度小于1°在中心频率35GHz 的插损约为3.25 dB。双巴伦和兰格电桥仿真得到的结果良好,为最终四次谐波镜像抑制混频器的单片实现奠定了基础。     

Ka 波段基波镜像抑制混频器无源电路的设计

本文介绍了Ka 波段基波镜像抑制混频器中无源电路的设计，无源电路包括带直流偏置支路的3dB 同相功分器和带中频输出支路的兰格电桥。运用ADS 软件进行辅助设计，最终得到功分器在频段32~37GHz 的幅度不平衡度小于0.01dB，在中心频率35GHz 的插损约为3.2 dB；兰格电桥在频段32~37GHz 的幅度不平衡度小于0.15 dB，相位差约为85°，相位不平衡度小于0.5°在中心频率35GHz 的插损约为3.4 dB。最终的仿真结果较好地满足了设计要求。     

Ka Band Broadband Fourth Harmonic Image Rejection Mixer

This paper presents the design and implementation of Ka band broadband hybrid integrated image rejection mixer with a fourth harmonic mixer as unit mixer. Detailed design and analysis have been carried out. The mixer was fabricated by hybrid microwave integrated circuit (HMIC) process based on the thin film ceramic substrate which can reduce the cost compared to monolithic microwave integrated circuit (MMIC). The measured results showed conversion loss less than 11.2 dB and image rejection ratio (IRR) more than 20 dB in 4 GHz RF bandwidth. It can also play the role of up-converter from the test data.     

Design of a KA-Band Image Rejection Sub-Harmonic Down-Converter MMIC

A Ka band image rejection sub-harmonic down-converter monolithic microwave integrated circuit (MMIC) is proposed. It contains a radio frequency (RF) amplifier, a broadband Lange coupler and two balanced mixers with two compact Marchand Baluns. The converter is fabricated by a commercial GaAs 0.2 μm pseudomorphic high electron mobility transistor (pHEMT) process, the size of which is 1.5 mm × 2 mm. Moreover, an improved nonlinear stability analysis method is presented in this paper. Based on the auxiliary generator (AG) technology, the method can analyze the nonlinear stability of circuits under the terminal impedance mismatched condition by setting the terminal load impedances as optimized variables. This method is applied to the sub-harmonic down-converter and is validated by the simulation and experiment. Experimental results show that from 30 GHz to 40 GHz, the conversion loss (CL) of the converter is less than 10 dB, and the image refection ratio (IMRR) is more than 15 dB.     

Ka 波段宽带单边带调制器集成电路的设计

基于相移法实现SSB(单边带)调制器理论,设计制造了一种Ka 波段宽带SSB 调制器集成电路。对相移法产生单边带调制信号的原理进行了分析,利用无源电路的3D 电磁仿真分析和ADS 整体电路非线性仿真相结合的方法对调制器进行了优化。设计制造的90°相移电桥网络和同相合成器满足了产生Ka 波段SSB 信号的幅相要求,同时给出了测试结果。调制器在30 ~36GHz 频带内插入损耗臆14dB;载波和对称边带抑制逸15dB;其它边带抑制逸13dB;输入1dB 压缩功率38dBm;外形尺寸18mm×6mm。这种相移法单边带调制器不需要带通滤波器,具有电路简单,载波抑制比高,对相位误差要求不高的优点。     

Compact 28-GHz subharmonically pumped resistive mixer MMIC using a lumped-element high-pass/band-pass balun

This work reports a novel lump-element balun for use in a miniature monolithic subharmonically pumped resistive mixer (SPRM) microwave monolithic integrated circuit. The proposed balun is simply analogous to the traditional Marchand balun. The coupled transmission lines are replaced by lump elements, significantly reducing the size of the balun. This balun requires no complicated three-dimensional electromagnetic simulations, multilayers or suspended substrate techniques; therefore, the design parameters are easily calculated. A 2.4-GHz balun is demonstrated using printed circuit board technology. The measurements show that the outputs of balun with high-pass and band-pass responses, a 1-dB gain balance, and a 5/spl deg/ phase balance from 1.7 to 2.45 GHz. The balun was then applied in the design of a 28-GHz monolithic SPRM. The measured conversion loss of the mixer was less than 11dB at a radio frequency (RF) bandwidth of 27.5-28.5 GHz at a fixed 1 GHz IF, a local oscillator (LO)-RF isolation of over 35 dB, and a 1-dB compression point higher than 9 dBm. The chip area of the mixer is less than 2.0 mm/sup 2/.     

Design of a 24-40 GHz balanced low noise amplifier using Lange couplers

A wide band(24-40 GHz)fully integrated balanced low noise amplifier(LNA)using Lange couplers was designed and fabricated with a 0.15/zm pseudomorphic HEMT(pHEMT)technology.A new method to design a low-loss and high-coupling Lange coupler for wide band application in microwave frequency was also presented.This Lange coupler has a minimum loss of 0.09 dB and a maximum loss of 0.2 dB over the bandwidth from 20 to 45 GHz.The measured results show that the realized four-stage balanced LNA using this Lange coupler exhibites a noise figure(NF)of less than 2.7 dB and the maximum gain of 30 dB;moreover,a noticeably improved reflection performance is achieved.The input VSWR and the output VSWR are respectively less than 1.45 and 1.35 dB across the 24-40 GHz frequency range.     

MMIC混频器电路设计与非线性分析

采用清华大学自行编制的混频器非线性分析程序ＴＵＭＩＸＥＲ，设计并研制了Ｋａ频段ＭＭＩＣ平衡混频器。在对混频器电路的大信号非线性仿真过程中，进行了多频谐波平衡分析，给出了混频器电路在多频输入情况下的输出频谱，对电路中的各种分布参数元件及微带不连续性区域，采用场匹配法作了严格计算。所研制的Ｋａ频段单片集成混频器电路，制作在一块２ｍｍ×３ｍｍ的ＧａＡｓ芯片上，在３１～３６ＧＨｚ频段上，混频器的噪声系数小于１０ｄＢ。     

宽带GaAs MMIC开关耦合器芯片设计

介绍了一种宽带开关耦合器芯片的研制。在GaAs pHEMT工艺平台上将宽带单刀双掷开关和兰格耦合器集成在一个芯片上,在实现二路功率分配功能的同时,还提供了在两个输出端口之间±90°相位切换的功能。该芯片频率范围覆盖6~18GHz,在整个频带内插入损耗<3.7dB,相位误差<14°,输入输出驻波比<1.8∶1。芯片尺寸1.5mm×3.0mm×0.1mm。详细描述了电路的设计流程,并提供最终的测试结果。该芯片具有频带宽、体积小、使用方便等特点,可应用于不同的微波系统。     

基于新型宽带半模SIW巴伦的双平衡混频器

利用新型宽带半模基片集成波导(SIW)巴伦,设计制作了一个X波段双平衡混频器.利用SIW上下导带电流相位相差180°的原理,经优化设计使该巴伦具有体积小、带宽大、平衡性好等特点.测试结果表明,该双平衡混频器在8.7～9.7GHz的频率范围内变频损耗小于9dB,最小可达7.3dB;噪声系数小于10dB,实物面积为60mm×68mm.     

Design of Lange-couplers and single-sideband mixers usingmicromachining techniques

This paper reports on the design and performance of micromachined Lange-couplers and single-sideband mixers (SSB) on thin dielectric membranes at Ku-band. The micromachined Lange-coupler results in a 3.6±0.8 dB coupling bandwidth from 6.5 to 20 GHz. The Lange-coupler and an interdigital filter are used in a 17-GHz SSB. The SSB mixer requires 1-2 mW of local oscillator (LO) power without dc bias and achieves a 30 dB upper-sideband (USB) image rejection for an IF frequency of 1 GHz and above. The micromachined membrane technology can be easily scaled to millimeter-wave monolithic microwave integrated circuits (MMIC's) to meet the low-cost requirements in automotive or portable communication systems     

C 波段LTCC 无通孔微型Lange 耦合器的研究

研究了一种C波段LTCC无通孔微型Lange耦合器,其结构紧凑,尺寸小。LTCC叠层技术是实现高性能、高可靠、微型化微波元件的主流技术之一,尤其是在提高电路集成度方面。Lange耦合器由于其特殊的结构使得其可以实现宽频带、高性能。设计、制作了一种中心频率为4GHz的宽带3dB Lange耦合器,尺寸仅为7.0mm×2.2mm×1.4mm。在2.0～6.0GHz频带内测试结果如下:插入损耗<0.3dB,反射损耗<21dB,隔离>27dB,相位平衡<90±3°,最大承受功率<40W(连续波)。测试与仿真结果较吻合,验证了研究结果的一致性。     

SSB MMIC mixer with subharmonic LO and CPW circuits for 38 GHz bandapplications

A single side-band (SSB) MMIC mixer employing a sub-harmonic configuration with an anti-parallel diode (APD) pair for 38 GHz band applications is designed and fabricated. Coplanar waveguide (CPW) models were used to design the mixer circuit. It acts as both an up- and down-converter with a conversion loss of less than 12.4 dB and a high image rejection ratio of greater than 15.1 dB over a wide frequency range from 32.5 to 42.0 GHz     

Design of a Broadband Millimeter-Wave Monolithic IQ Mixer

A 26∼40 GHz millimeter-wave monolithic passive IQ mixer was designed by using Win’s 0.15-μm GaAs pHEMT process. It utilizes a ring diode structure, and the performance can be improved effectively by a modified Marchand balun and U-type coupled lines. Through on-wafer measurement, the mixer shows a conversion loss of 6.6∼9 dB over a bandwidth of 26∼40 GHz, an IF bandwidth from DC to 6 GHz, an image rejection ratio of 21∼30 dB, an LO-RF isolation of above 24 dB, an LO-IF isolation of above 35 dB, and an RF-IF isolation of above 25 dB.     

K波段单片接收机设计

基于0.15μm GaAs PHEMT工艺,设计了一款K波段MMIC接收机,频率覆盖19～26 GHz。在单个芯片内集成了平衡式低噪声放大器、本振驱动放大器、镜像抑制次谐波混频器等电路。在19～26 GHz射频输入带宽内的转换增益为7 dB;噪声系数典型值为4 dB;输入回波损耗-12 dB;镜像抑制15 dB;本振-射频隔离度55 dB。为了降低了芯片成本,采用电磁场仿真软件对电路面积做优化设计,使得芯片面积仅为2 mm×4 mm。此接收机MMIC具有集成度高、可靠性高、体积小等特点,可广泛应用于各种微波通信系统和雷达系统。     

A Miniature Q-Band Balanced Sub-Harmonically Pumped Image Rejection Mixer

This work presents a miniature Q-band balanced single side-band sub-harmonically pumped image rejection diode mixer (SHIRM) using a compact Marchand dual balun design. The SHIRM is realized employing four anti-parallel diode pairs for frequency mixing, a Lange coupler for radio frequency (RF) signal input, and a reduced size three-conductor-line Marchand dual balun for local oscillator pumping. The length of three-conductor-line dual balun is reduced by 81% after shunting two lumped capacitors at the center conductor. The measured results exhibit a minimum conversion loss of 8.6 dB, a maximum image rejection ratio of 22 dB, all ports isolation better than 37 dB, and an input 1-dB compression point of 2.5 dBm at RF bandwidth of 40.5 to 43.5 GHz and fixed intermediate frequency of 2.4 GHz. The chip area is very compact, only 1 times 0.84mm²     

Ka频段宽带镜频抑制谐波混频器的设计

介绍了一种在Ka频段具有镜频抑制功能的四次谐波混合集成电路混频器的设计与实现.该混频器主要采用微带混合集成电路,由薄膜陶瓷基片制作.经测试,当中频固定在70 MHz,在射频大于4 GHz带宽内,变频损耗小于11.2 dB,镜频抑制度大于20 dB.     

Ka波段双平衡星型混频器的设计与仿真

采用0.15μm GaAs PHEMT工艺,设计了一个26-38 GHz单片双平衡星型混频器,本设计改变了星型混频器一贯的混合微波集成电路结构,设计了版图实现单片集成,最后得出电磁仿真结果。此混频器能在中频为DC-12 GHz时,电磁仿真结果达到7-10 dB的变频损耗和15 dB以上的端口隔离。