Electrical and Thermal Properties of SiC Ceramics Sintered with Yttria and Nitrides

The electrical and thermal properties of SiC ceramics containing 1 vol% nitrides (BN, AlN or TiN) were investigated with 2 vol% Y₂O₃ addition as a sintering additive. The AlN‐added SiC specimen exhibited an electrical resistivity (3.8 × 10¹ Ω·cm) that is larger by a factor of ~10² compared to that (1.3 × 10^?1 Ω·cm) of a baseline specimen sintered with Y₂O₃ only. On the other hand, BN‐ or TiN‐added SiC specimens exhibited resistivity that is lower than that of the baseline specimen by a factor of 10^?1. The addition of 1 vol% BN or AlN led to a decrease in the thermal conductivity of SiC from 178 W/m·K (baseline) to 99 W/m·K or 133 W/m·K, respectively. The electrical resistivity and thermal conductivity of the TiN‐added SiC specimen were 1.6 × 10^?2 Ω·cm and 211 W/m·K at room temperature, respectively. The present results suggest that the electrical and thermal properties of SiC ceramics are controllable by adding a small amount of nitrides.     

Electrically conductive SiC ceramics processed by pressureless sintering

Polycrystalline SiC ceramics with 10 vol% Y₂O₃-AlN additives were sintered without any applied pressure at temperatures of 1900-2050°C in nitrogen. The electrical resistivity of the resulting SiC ceramics decreased from 6.5 × 10¹ to 1.9 × 10⁻² Ω·cm as the sintering temperature increased from 1900 to 2050°C. The average grain size increased from 0.68 to 2.34 μm with increase in sintering temperature. A decrease in the electrical resistivity with increasing sintering temperature was attributed to the grain-growth-induced N-doping in the SiC grains, which is supported by the enhanced carrier density. The electrical conductivity of the SiC ceramic sintered at 2050°C was ~53 Ω⁻¹·cm⁻¹ at room temperature. This ceramic achieved the highest electrical conductivity among pressureless liquid-phase sintered SiC ceramics.     

Electrical resistivity of silicon carbide ceramics sintered with 1 wt% aluminum nitride and rare earth oxide

The influence of additive composition on the electrical resistivity of hot-pressed liquid-phase sintered (LPS)-SiC was investigated using AlN–RE₂O₃ (RE = Sc, Nd, Eu, Gd, Ho, Er, Lu) mixtures at a molar ratio of 60:40. It was found that all specimens could be sintered to densities >95% of the theoretical density by adding 5 wt% in situ-synthesized nano-sized SiC and 1 wt% AlN–RE₂O₃ additives. Six out of seven SiC ceramics showed very low electrical resistivity on the order of 10^?4 Ω m. This low electrical resistivity was attributed to the growth of nitrogen-doped SiC grains and the confinement of non-conducting RE-containing phases in the junction areas. The SiC ceramics sintered with AlN–Lu₂O₃ showed a relatively high electrical resistivity (～10^?2 Ω m) due to its lower carrier density (～10¹⁷ cm^?3), which was caused by the growth of faceted grains and the resulting weak interface between SiC grains.     

Effect of carbon content on electrical,thermal, and mechanical properties of porous SiC ceramics with B4C and C additives

The electrical, thermal, and mechanical properties of porous SiC ceramics with B₄C-C additives were investigated as functions of C content and sintering temperature. The electrical resistivity of porous SiC ceramics decreased with increases in C content and sintering temperature. A minimal electrical resistivity of 4.6 × 10^?2 Ω·cm was obtained in porous SiC ceramics with 1 wt% B₄C and 10 wt% C. The thermal conductivity and flexural strength increased with increasing sintering temperature and showed maxima at 4 wt% C addition when sintered at 2000 °C and 2100 °C. The thermal conductivity and flexural strength of porous SiC ceramics can be tuned independently from the porosity by controlling C content and sintering temperature. Typical electrical resistivity, thermal conductivity, and flexural strength of porous SiC ceramics with 1 wt% B₄C-4 wt% C sintered at 2100 °C were 1.3 × 10^?1 Ω·cm, 76.0 W/(m·K), and 110.3 MPa, respectively.     

Control of Electrical Resistivity in Silicon Carbide Ceramics Sintered with Aluminum Nitride and Yttria

The electrical properties of β‐SiC ceramics were found to be adjustable through appropriate AlN–Y₂O₃ codoping. Polycrystalline β‐SiC specimens were obtained by hot pressing silicon carbide (SiC) powder mixtures containing AlN and Y₂O₃ as sintering additives in a nitrogen atmosphere. The electrical resistivity of the SiC specimens, which exhibited n‐type character, increased with AlN doping and decreased with Y₂O₃ doping. The increase in resistivity is attributed to Al‐derived acceptors trapping carriers excited from the N‐derived donors. The results suggest that the electrical resistivity of the β‐SiC ceramics may be varied in the 10⁴–10^?3 Ω·cm range by manipulating the compensation of the two impurity states. The photoluminescence (PL) spectrum of the specimens was found to evolve with the addition of dopants. The presence of N‐donor and Al‐acceptor states within the band gap of 3C–SiC could be identified by analyzing the PL data.     

SDS-stabilized graphene nanosheets for highly electrically conductive adhesives

We report sodium dodecyl sulfate (SDS) stabilization of graphene nanosheets, with two different sizes as auxiliary fillers inside the conventional electrically conductive adhesive (ECA) composite. Using this non-covalent modification approach we were able to preserve the single-layer structure of graphene layers and prevent their re-stacking inside the composite, which resulted in a significant electrical conductivity improvement of ECAs at noticeably low filler content. Addition of 1.5 wt% small and large SDS-modified graphene into the conventional ECAs with 10 wt% silver flakes led to low electrical resistivity values of 5.5 × 10³ Ω cm and 35 Ω cm, respectively, while at least 40 wt% of silver flakes was required for the conventional ECA to be electrically conductive. A highly conductive ECA with very low bulk resistivity of 1.6 × 10⁻⁵ Ω cm was prepared by adding 1.5 wt% of SDS-modified large graphene into the conventional ECA with 80 wt% silver flakes which is less than that of eutectic lead-based solders.     

Electrical resistivity and flexural strength of mullite-bonded porous SiC: Effect of transition metal additives

The influence of various transition metal (Mo, Co, Ni, and Fe) additives on the electrical and mechanical properties of mullite-strengthened SiC sintered in the range of 1100–1500°C under an Ar atmosphere was investigated. Kaolin was added as a low-temperature sintering aid in the designed formulations. The addition of metal additives reduced the electrical resistivity, enhanced the mechanical strength, and produced samples with an approximately 40% porosity. The decrease in electrical resistivity was attributed to the in situ formation of electrically conductive metal silicides, whereas the conversion of kaolin to mullite enhanced the mechanical properties. The comparative study shows that at the same metal-additive content (15 wt%), Fe was the most effective element to reduce the electrical resistivity and increase the flexural strength, which were recorded as 8.0 × 10⁰ Ω cm and 20 ± 2 MPa, respectively, of the samples sintered at merely 1300°C.     

Electrical resistivity at the micron scale in a polycrystalline SiC ceramic

Grain boundaries typically dominate the electrical properties of polycrystalline ceramics. To understand the effect of grain boundaries on the electrical conductivity of SiC ceramics sintered with 2000 ppm Y₂O₃, the electrical resistivity of individual grains and multi-grains across boundaries at the micron scale was measured using a nano-probing system equipped with nano-manipulators. The results revealed that grain resistivity was bimodal because of the existence of a core/rim structure in grains, and the electrical resistivity of multigrain samples slowly increased with an increase in the number of grain boundaries crossed. Specifically, the electrical resistivity of a grain without a core, a grain with a core, a bicrystal with a single boundary, a sample crossing three boundaries, and a bulk polycrystalline sample were 2.36 × 10^-1, 5.05 × 10^-1, 4.80 × 10^-1, 5.04 × 10^-1, and 5.84 × 10^-1 Ω cm, respectively. The results suggest that the electrical resistivity of polycrystalline SiC ceramics is primarily influenced by the presence of a grain boundary or core and secondarily by the number of boundaries.     

Microstructure,Thermal Conductivity,and Electrical Properties of In Situ Pressureless Densified SiC–BN Composites

The microstructure, thermal conductivity, and electrical properties of pressureless densified SiC–BN composites prepared from in situ reaction of Si₃N₄, B₄C, and C were systematically investigated, to achieve outstanding performance as substrate materials in electronic devices. The increasing BN content (0.25–8 wt%) in the composites resulted in finer microstructure, higher electrical resistivity, and lower dielectric constant and loss, at the expense of only slight degradation of thermal conductivity. The subsequently annealed composites showed more homogeneous microstructures with less crystal defects, further enhanced thermal conductivities and electrical resistivities, and reduced dielectric constants and losses, compared with the unannealed ones. The enhanced insulating performance, the weakened interface polarization, and the reduced current conduction loss were explained by the gradual equalization of dissolved B and N contents in SiC crystals and the consequent impurity compensation effect. The schottky contact between graphite and p‐type SiC grains presumably played a critical role in the formation of grain‐boundary barriers. The annealed composites doped with 8 wt% BN exhibited considerably high electrical resistivity (4.11 × 10¹¹ Ω·cm) at 100 V/cm, low dielectric constant (16.50), and dielectric loss (0.127) at 1 MHz, good thermal conductivity [66.06 W·(m·K)^?1] and relatively high strength (343 MPa) at room temperature.     

Effect of Ni content and its particle size on electrical resistivity and flexural strength of porous SiC ceramic sintered at low-temperature using clay additive

A low-temperature sintered porous SiC-based clay-Ni system with controlled electrical resistivity (2.54 × 10¹⁰ Ω cm to 2 Ω cm), and thermal conductivity (3.5 W/m. K to 12.6 W/m. K) was successfully designed. Clay (20 wt% kaolin) was used as a sintering additive in all the compositions. The electrical resistivity, and thermal conductivity was controlled by varying the Ni content (0–25 wt%) in the samples. The electrical resistivity was recorded as low as 2 Ω cm with 25 wt% Ni that was sintered at 1400 °C in argon. The interface reaction between Ni and SiC formed conductive nickel silicide (Ni₂Si), while the transformation of kaolin to mullite strengthened the mechanical properties. Submicron-sized Ni (0.3 μm) was more effective than micron-sized Ni (3.5 μm) in reducing the electrical resistivity, and increasing the thermal conductivity along with flexural strength. A comparative study of sintering temperatures showed that 1400 °C resulted in the lowest electrical resistivity (2 Ω cm) and the highest thermal conductivity of 12.6 W/m. K with flexural strength of 54 MPa at 32% porosity in the SiC-kaolin-Ni system.     

Thermal and electrical properties of additive-free rapidly hot-pressed SiC ceramics

The thermal and electrical properties of newly developed additive free SiC ceramics processed at a temperature as low as 1850 °C (RHP0) and SiC ceramics with 0.79 vol.% Y₂O₃-Sc₂O₃ additives (RHP79) were investigated and compared with those of the chemically vapor-deposited SiC (CVD-SiC) reference material. The additive free RHP0 showed a very high thermal conductivity, as high as 164 Wm⁻¹ K⁻¹, and a low electrical resistivity of 1.2 × 10⁻¹ Ω cm at room temperature (RT), which are the highest thermal conductivity and the lowest electrical resistivity yet seen in sintered SiC ceramics processed at ≤1900 °C. The thermal conductivity and electrical resistivity values of RHP79 were 117 Wm⁻¹ K⁻¹ and 9.5 × 10⁻² Ω cm, respectively. The thermal and electrical conductivities of CVD-SiC parallel to the direction of growth were ∼324 Wm⁻¹ K⁻¹ and ∼5 × 10⁻⁴Ω⁻¹ cm⁻¹ at RT, respectively.     

Electrical resistivity of α-SiC ceramics sintered with Al2O3 or AlN additives

Highly resistive SiC ceramics were prepared by hot pressing α-SiC powders with Al₂O₃-Y₂O₃ additives with a 4:1 molar ratio. X-ray diffraction patterns, Raman spectra, electron probe microanalysis (EMPA), and scanning electron microscopy (SEM) images revealed that the bulk SiC ceramics consisted mostly of micron-sized 6H-SiC grains along with Y₂O₃ and Si clusters. As the additive content increased from 1 to 10 vol%, the electrical resistivity of the ceramics increased from 3.0 × 10⁶ to 1.3 × 10⁸ Ω cm at room temperature. Such high resistivity is ascribed to Al₂O₃ in which Al impurities substituting Si site act as deep acceptors for trapping carriers. More resistive α-SiC ceramics were produced by adding AlN instead of Al₂O₃. The highest resistivity (1.3 × 10¹⁰ Ω cm) was achieved by employing 3 vol% AlN-Y₃Al₅O₁₂ (yttrium aluminum garnet, YAG) as an additive.     

Microstructural,electrical, and mechanical properties of conductive SiC ceramics fabricated by spark plasma sintering

Nitrogen (N)-doped conductive silicon carbide (SiC) of various electrical resistivity grades can satisfy diverse requirements in engineering applications. To understand the mechanisms that determine the electrical resistivity of N-doped conductive SiC ceramics during the fast spark plasma sintering (SPS) process, SiC ceramics were synthesized using SPS in an N₂ atmosphere with SiC powder and traditional Al₂O₃–Y₂O₃ additive as raw materials at a sintering temperature of 1850–2000°C for 1–10 min. The electrical resistivity was successfully varied over a wide range of 10⁻³–10¹ Ω cm by modifying the sintering conditions. The SPS-SiC ceramics consisted of mainly Y–Al–Si–O–C–N glass phase and N-doped SiC. The Y–Al–Si–O–C–N glass phase decomposed to an Si-rich phase and N-doped Y_xSi_yC_z at 2000°C. The Vickers hardness, elastic modulus, and fracture toughness of the SPS-SiC ceramics varied within the ranges of 14.35–25.12 GPa, 310.97–400.12 GPa, and 2.46–5.39 MPa m^1/2, respectively. The electrical resistivity of the obtained SPS-SiC ceramics was primarily determined by their carrier mobility.     

Temperature Dependence of Electrical Resistivity (4–300 K) in Aluminum‐ and Boron‐Doped SiC Ceramics

Al‐ and B‐doped 3C–SiC ceramics were prepared by hot‐pressing powder compacts containing submicrometer‐sized β‐SiC, precursors of 5 wt% nanosized β‐SiC, and an optional additive (Al or B) in an Ar atmosphere. Electron probe microanalysis (EPMA) investigation on the obtained specimens revealed that a portion of the doped Al and B atoms substituted the zinc blende lattice sites. The temperature‐dependent electrical resistivity data of the Al‐ and B‐doped SiC specimens were measured in the 4–300 K range and compared with those of an undoped specimen. The Al‐ and B‐doped SiC specimens exhibited resistivities that were as high as ~10³ Ω cm at room temperature and ~10⁵ and ~10⁴ Ω cm, respectively, below 100 K. These values are larger than those of the undoped SiC specimen by a factor of ~10⁴. Such high resistivities of the impurity‐doped specimens are attributable to the carrier compensation by the Al‐ and B‐derived acceptors located well above the valence‐band edge of 3C–SiC. Photoluminescence investigation revealed that the Al‐ and B‐doped specimens exhibited emission profile below 2 eV, implying the existence of the acceptors.     

Influence of sintering atmosphere and BN additives on microstructure and properties of porous SiC ceramics

The effects of the boron nitride (BN) content on the electrical, thermal, and mechanical properties of porous SiC ceramics were investigated in N₂ and Ar atmospheres. The electrical resistivity was predominantly controlled by the sintering atmosphere and secondarily by the BN concentration, whereas the thermal conductivity and flexural strength were more susceptible to changes in the porosity and necking area between the SiC grains. The electrical resistivities of argon-sintered porous SiC ceramics (6.3 × 10⁵ – 1.6 × 10⁶ Ω·cm) were seven orders of magnitude higher than those of nitrogen-sintered porous SiC ceramics (1.5 × 10⁻¹ – 6.0 × 10⁻¹ Ω·cm). The thermal conductivity and flexural strength of the argon-sintered porous SiC ceramics increased from 8.4–11.6 W·m⁻¹ K⁻¹ and from 9.3–28.2 MPa, respectively, with an increase in the BN content from 0 to 1.5 vol%, which was attributed to the increase in necking area and the decrease in porosity.     

Mechanical and tribological properties of SiC whisker-reinforced SiC composites via oscillatory pressure sintering

SiC whisker (SiCw)-reinforced SiC composites were prepared by an oscillatory pressure sintering (OPS) process, and the effects of SiCw content on the microstructure and mechanical and tribological properties of such composites were investigated. The addition of SiCw could promote the formation of long columnar α-SiC, and the aspect ratio of α-SiC grains first increased and then decreased with the increase of SiCw content. When the SiCw content was 5.42 wt%, the relative density of the SiC–SiCw composite reached up to 99.45%. The SiC–5.42 wt% SiCw composite possessed the highest Vickers hardness, fracture toughness, and flexural strength of 30.68 GPa, 6.66 MPa·m^1/2, and 733 MPa, respectively. In addition, the SiC–5.42 wt% SiCw composite exhibited the excellent wear resistance when rubbed with GCr15 steel balls, with a friction coefficient of .76 and a wear rate of 4.12 × 10⁻⁷ mm³·N⁻¹·m⁻¹. This could be ascribed to the improved mechanical properties of SiC–SiCw composites, which enhanced the ability to resist peeling and micro-cutting, thereby enhancing the tribological properties of the composites.     

Highly conductive SiC ceramics containing Ti2CN

Highly conductive SiC ceramics were fabricated by sintering β-SiC and TiN powder mixture in N₂ atmosphere. SiC ceramics exhibited decreased electrical resistivity (ρ) with increasing TiN content. X-ray diffraction data indicated that the specimens consisted of β-SiC grains without a detectible secondary phase for low TiN content (≤2 vol%) but contained a Ti₂CN phase as the TiN content increased. The temperature-dependent resistivity ρ(T) of specimens revealed semiconductor-like behavior for TiN content up to 10 vol% and metal-like behavior above 20 vol%. For the specimen with TiN content of 15 vol%, ρ(T) remained almost constant (2.06 ± 0.01 × 10⁻³ Ω cm) in the 4–300 K range. The resistivity of metal-like specimens were as low as 3.5 × 10⁻⁴ Ω cm for TiN content of 20 vol%. For semiconductor-like specimens, ρ(T) was primarily affected by N donors in the β-SiC grains. Metal-like specimens were primarily affected by metallic Ti₂CN clusters.     

Fabrication and properties of macro-porous SiC using Al2O3–Y2O3–SiO2 as bonding additives

Macro-porous SiC was fabricated without using pore-forming agents by an in situ reaction bonding process. A bonding additive, Al₂O₃–Y₂O₃–SiO₂, with a low melting temperature was mixed with SiC particles and sintered at 1500 °C and 1600 °C for 1 h in Ar. Macro-porous SiC with a porosity of 32.7–45.9%, a pore size of 3.4–4.2 μm, and a relatively narrow and uniform pore size distribution was fabricated by varying the amount of bonding additive. The flexural strength of macro-porous SiC prepared at 1500 °C increased from 47.2 MPa to 71.2 MPa while the porosity decreased from 45.9% to 42.8%, respectively. When the sintering temperature of the macro-porous SiC was increased to 1600 °C, the flexural strengths were significantly reduced to 32.6–35.6 MPa, along with a reduction in porosity and pore size. The permeability of macro-porous SiC prepared at 1500 °C varied from 1.59 × 10^?12 m² to 1.26 × 10^?12 m², depending on the porosity. As the sintering temperature increased from 1500 °C to 1600 °C, the permeability decreased to less than 1.00 × 10^?12 m² because of the reduced porosity and average pore size. The electrical resistivity of macro-porous SiC prepared at 1500 °C and 1600 °C varied from 2.7 × 10⁸ Ω-cm to 1.4 × 10⁹ Ω-cm and from 1.3 × 10⁸ Ω-cm to 1.7 × 10⁹ Ω-cm, respectively, with increasing volume percent of bonding additives. The relatively high electrical resistivity was apparently due to neck bonding phase between SiC particles formed by phases consisting of Y₂Si₂O₇, YAG, and residual Al₂O₃.     

Development of spark plasma sintered conductive SiC–TiB2 composites for electrical discharge machining applications

Highly dense electrically conductive silicon carbide (SiC)–(0, 10, 20, and 30 vol%) titanium boride (TiB₂) composites with 10 vol% of Y₂O₃–AlN additives were fabricated at a relatively low temperature of 1800°C by spark plasma sintering in nitrogen atmosphere. Phase analysis of sintered composites reveals suppressed β→α phase transformation due to low sintering temperature, nitride additives, and nitrogen sintering atmosphere. With increase in TiB₂ content, hardness increased from 20.6 to 23.7 GPa and fracture toughness increased from 3.6 to 5.5 MPa m^1/2. The electrical conductivity increased to a remarkable 2.72 × 10³ (Ω cm)^–1 for SiC–30 vol% TiB₂ composites due to large amount of conductive reinforcement, additive composition, and sintering in nitrogen atmosphere. The successful electrical discharge machining illustrates potential of the sintered SiC–TiB₂ composites toward extending the application regime of conventional SiC-based ceramics.     

Effect of Ti3C2Tx/Ag MXene fillers on the electrical conductivity of Ag-coated Cu conductive adhesives

In this paper, we prepared ECAs (electrical conductive adhesives) with high electrical conductivity by using Ag-coated copper powder and M − II (Ti₃C₂T_x/Ag powder) as conductive filler. M-Ⅰ (Ti₃C₂T_x) and M-Ⅱ were prepared by acid etching and hydrothermal methods, respectively, and the electrochemical properties of M-Ⅱ and the effects of different contents of M-Ⅱ on the conductivity of ECAs were investigated. M − II has a unique reticular structure which helps to create conductive pathways, and its high specific surface area provides a large number of active sites for charge storage, resulting in increased electrical conductivity. The experimental results show that the best conductivity is achieved when the M-Ⅱ powder content is 1.2%, with a volume resistivity of 4.84 × 10⁻⁶ Ω m, at which time the Ag-coated Cu powder content is 69.8%. It has been shown in many studies that only when Ag-coated copper powder content is 70%–80%, the resistivity reaches about 10⁻⁶ Ω m. This work showed that adding a small amount of M − II and reducing the amount of Ag-coated copper powder could maintain the high electrical conductivity of ECAs.