硫酸光亮镀锡、锡钴合金镀液极化曲线的研究

为了研究3种希夫碱光亮剂(DL01、DL02、DL03)及CoSO4在电镀时的电化学行为,采用线性电位扫描法测定了含新型添加剂的硫酸光亮镀锡、锡钴合金镀液的极化曲线.结果表明,在含DL01或镀锡光亮剂FB的硫酸镀锡溶液中,Sn2 的还原峰电位分别为-0.275V及-O.265V.在含DL02或DL03的硫酸镀锡溶液中,有2个Sn2 的还原峰,低电位还原峰分别为-0.160,-0.240V;高电位还原峰的电位分别为-0.395,-0.410V,并使大量析氢电位峰负移-0.080,-0.100V.在含DL01、DL02、DL03及Co-SO4的镀液中,当SnSO4为20 g/L时,Co促进了Sn的沉积产生共析;当SnSO4含量为40g/L时,Co2 的极化作用及共析作用消失.     

无镍枪色锡-钴合金电镀工艺

为了节约镍资源及降低传统枪色电镀产品的毒性,开发了一种无镍枪色锡-钴合金电镀工艺:采用焦磷酸盐体系并添加光亮剂直接在铜片表面进行锡-钴合金电镀。探讨了镀液组成、温度、pH值及电流密度对镀层外观、镀液稳定性的影响,确定了其最佳工艺参数:250.0 g/L焦磷酸钾,20.0 g/L硫酸亚锡,15.0 g/L硫酸钴,0.6 g/L光亮剂1,2.0 g/L光亮剂2,3 mL/L 25%氨水,温度45℃,pH值8.5,电流密度0.5 A/dm2,施镀时间3 min。该工艺所得镀层颜色呈枪色,均匀致密,附着力好,且镀液稳定。     

Fe-Ni-Cr合金电沉积工艺参数对镀层铬含量的影响

为了在铁基上获得耐腐蚀性能好的、光亮致密的Fe-Ni-Cr合金镀层,在氯化物-硫酸盐混合体系中,研究了在铁基上电沉积Fe-Ni-Cr合金的工艺,确定出电沉积铁镍铬合金的最佳工艺条件:阴极电流密度14 A/dm2,镀液温度30℃,pH值2.0,镀液中CrCl3·6H2O浓度为25g/L.结果表明,合金镀层中Cr含量越高,镀层耐蚀性能越好,在最佳工艺条件下,镀层中Cr的含量接近6%,Fe的含量为54%,镀层光亮致密且耐蚀性好.     

生铁铸件电镀铜锡合金

着重介绍了在生铁铸件上镀两次Cu—Sn合金工艺,解决镀层的泛点和锈蚀问题。对Cu—Sn合金代镍工艺的不断改进和提高,具有一定的参考作用。     

电镀非晶态镍钨合金工艺研究

研究了电镀非晶态镍钨合金工艺,采用EDS、XRD等手段检测了镍钨合金镀层,并将工艺条件如电流密度Jc、镀液pH值、镀液温度等对镀层的影响进行了比较,得出非晶态镍钨合金电镀的最佳工艺:[W]/([W] [Ni])为0.6～0.8,Jc=6.0～12.0 A/dm2,温度55～65℃,pH=6.5～7.5.结果表明,W含量质量分数高于44%的镍钨合金镀层结构为非晶态;且在此工艺下易得到钨含量在44%以上的非晶态钨合金镀层.     

Zn-Fe-La三元合金电沉积工艺研究

为了获得光亮、致密和耐蚀性好的Zn-Fe-La三元合金镀层,试验研究了氯化物体系中电沉积Zn-Fe-La三元合金的工艺条件.通过考察镀液成分、pH值、添加荆、稀土盐对合金镀层的影响,确立适宜的镀液配方和工艺条件.结果表明,最佳配方及工艺条件:60～120 g/L FeSO4·7H2O,30～50g/L znCl2·7H2O,4～10g/L LaCl3,10 g/L C6H8O7·H2O,40 g/L C6 H5Na 3O7·2H2O,100 g/L KCl,2 g/L抗坏血酸,6 g/L苄又丙酮,7mL/L ZF光亮剂,2 g/L聚乙二醇(分子量大于6000),pH值为3,施镀时间10 min,电流密度J=3.5 A/dm2,室温.在该工艺条件下,可在水溶液中电沉积出稀土含量为4.61%的Zn-Fe-La三元合金.同时,稀土的加入能改变镀层成分,增大合金电沉积的阴极极化,同时镀层的耐蚀性较Zn-Fe合金镀层提高了约1倍.     

铜线材电镀可焊性锡工艺

以 2 -甲基醛缩苯胺为主光剂、脂肪醛缩胺为次光剂 ,在硫酸亚锡镀液中 ,1～ 2 0 A/ dm2条件下 ,0 .5 mm的铜线上制得可焊性锡镀层 ,镀层可抗 2 0 0℃、1h老化 ,具有较好的可焊性。     

冷轧变形对镀Ni-Co钢带耐腐蚀性能的影响

为了获得高性能的合金镀层薄膜材料,采用电沉积法制备了Ni-Co合金镀层薄膜,对镀层的钴含量、表面形貌及冷轧变形下的耐腐蚀性能进行了研究.结果表明:当镀液中硫酸钴含量为2 g/L时,合金镀层中的钴含量约为3.89%,镀层表面光亮、结晶致密;冷轧变形量为2%～4%时,镀Ni-Co合金薄膜钢带的耐腐蚀性能得到提高,变形量超过4%后其耐腐蚀性能降低.这说明小的冷轧变形能有效地提高镀层的耐腐蚀性能.     

化学镀铜—锡—磷三元合金

采用化学镀技术，成功地在钢铁基体上制备了84．5%Cu、12％Sn、3．5%P的三元合金镀层，其沉积速度约为3μm/h。阐述了镀液关键组分的浓度和工艺参数对镀层中铜锡磷含量的影响，提出了获得良好镀层的最佳镀液组成及操作条件。     

Pb-Sn-Cu合金共沉积工艺研究

为了改善内燃机滑动轴承镀层的减摩性能,采用在合金基体上镀覆三元合金的工艺,在氟硼酸盐镀液体系中实现了Pb-Sn-Cu三元合金表面电镀.研究了镀液体系中镀液成分及工艺参数对Pb-Sn-Cu三元合金镀层成分及含量的影响.结果表明,镀液成分及电镀工艺参数对镀层成分及含量有较大的影响.镀液成分及电镀工艺参数的试验结果表明,镀液的最佳组成及工艺参数为:200 g/L Pb2+,25 g/L Sn2+,2.5 g/LCu2+,4g/L对苯二酚,2.5 g/L蛋白胨,100 g/L游离HBF4,30 g/L H3803,温度为25℃,电流密度6.0A/dm2.     

Comparison of the dye-sensitized solar cells performances based on transparent conductive ITO and FTO

We investigated dye-sensitized solar cell (DSSC) performances with regard to transparent conducting oxide substrates: indium-doped tin oxide (ITO) and fluorine-doped tin oxide (FTO). The DSSCs were in a standard configuration: a photoelectrode of TiO₂ nanoparticles (9 nm size, anatase phase) deposited on transparent and electrically conductive substrates, counter electrodes of Pt-coated glass, ruthenium 535 dye, and AN50 iodolyte electrolyte (Solaronix). The cells manufactured from ITO (FTO) had an open circuit voltage of 705 (763) mV and short-circuit current of 7.87 (34.3) mA/cm². A direct correlation was found between transparent conductive film resistivity and cell efficiency. Resistivities of 52 Ω/sq for ITO substrates and 8.5 Ω/sq for FTO led to major differences in internal global efficiency: from 2.24% for ITO to 9.6% for FTO.     

温度和搅拌对甲基磺酸亚锡电镀亚光锡的影响

为提高甲基磺酸盐体系镀锡的质量,在甲基磺酸亚锡镀液中加入自主研发的亚光添加剂进行电镀亚光锡,采用电化学试验、Hull槽试验、扫描电镜等考察了温度和搅拌对甲基磺酸盐体系电镀亚光锡的阴极极化行为、镀层形貌、电流密度范围、沉积效率、沉积速度及镀液成分的影响。结果表明:亚光添加剂能够显著提高电镀亚光锡的阴极过电位、改善镀层质量;搅拌镀液可使浓差极化减小,增大了电镀亚光锡的电流密度范围;镀液温度升高,锡沉积电位正移,晶粒变粗,电流密度范围、电流效率和锡沉积速度均有所提高;温度过高(40～50℃)时,随着电镀时间的延长,镀液中Sn2+浓度升高,甲基磺酸浓度下降,镀液成分变化较大,不利于镀液维护及连续生产。     

Laboratory scale electroplating and processing of long lengths of in situ Cu3Sn superconductors

The high temperature gradient solidification (HTGS) system for continuous casting of 12.7 mm diameter rods of in situ Cu-Nb is briefly reviewed. A laboratory scale continuous tin electroplating system is described and used to evaluate the effect of various parameters of the alkaline and acid baths plating process. Tin electroplating is shown to be simple and reliable. With an 8 m immersion length production speeds of ～ 1 m min^?1 are possible in an alkaline bath at 80°C. An acid bath gives satisfactory tinning deposits with a production speed of up to 3 m min^?1 at room temperature.     

Cd2SnO4-its sol-gel preparation and materials properties

Cd₂SnO₄ powder has been synthesized through acrylamide sol-gel route for the first time. The gelation-calcination steps have been studied. Morphological examination of the network matrix and the calcined products has been done through SEM. XRD shows the orthorhombic structure of the Cd₂SnO₄ powder obtained. Arrhenius plots yield activation energies of 0·01 and 0·61 eV for the low and high slope regions, respectively. A semiconductor to metal transition is observed in the range 210–225°C.     

Laser assisted formation of binary and ternary Ge/Si/Sn alloys

Binary and ternary Si/Ge/Sn alloys were epitaxially grown on virtual Germanium buffer layers using pulsed laser induced epitaxy with a 193 nm Excimer laser source. The role of the processing parameters on the intermixing of the components (Sn, Ge and Si) has been studied. Characterization of the resulting Ge_1 − xSn_x and Si_{1 − y − x}Ge_ySn_x alloys yield up to 1% Sn concentration in substitutional sites of the Ge or SiGe matrix.     

The structural and electrical properties of Zn-Sn-O buffer layers and their effect on CdTe solar cell performance

Thin films of zinc-tin-oxide (ZTO) have been deposited on SnO₂:F coated glass substrates by co-sputtering of SnO₂ and ZnO. The deposition conditions for ZTO were controlled in order to vary film stoichiometry. The electro-optical and structural properties of ZTO have been studied as a function of their stoichiometric ratio and post-deposition annealing conditions. The same films were subsequently utilized as part of a bi-layer transparent front contact for the fabrication of CdTe solar cells: glass/SnO₂:F/ZTO. The performance of these devices suggested that the ZTO deposition and cell processing conditions can be optimized for enhanced device performance in particular for devices with thin CdS. Specifically, high blue spectral response (> 70% at 450 nm), accompanied by high open-circuit voltages (830 mV), and fill factors (70⁺%) have been demonstrated. Best solar cell performance was obtained for multi-phase ZTO films deposited at substrate temperatures of 400°C and a Zn/Sn ratio of 2.0, and which contained the binary phase of ZnO₂.     

Selective semiconductor sensors for reducing and oxidizing gases

The ever-increasing need for sensors capable of detecting and monitoring toxic and flammable gases is presented and the various techniques available are introduced. Semiconductor devices based on tin dioxide, which potentially have many desirable characteristics, are discussed in detail with particular reference to the work in Swansea which has focused on the problem of selectivity.     

Electrical resistivity and deviation from matthiessen's rule in polycrystalline lead-doped tin

The results of measurements of the electrical resistivity, of lead-doped (weight concentrations: 0.001, 0.01, 0.1, and 1%) polycrystalline tin are presented. The experiments were performed using a comparative method with the aid of a tantalum thermomagnetic modulator applied as a null indicator. A nonlinear dependence of the residual resistivity on lead concentration was obtained. An anomalous character ofp(T) dependence was observed in the lowest-Pb concentration sample (0.001%). The deviation of the resistivity-temperature characteristics from Matthiessen's rule (DMR) was determined. The characteristics of the DMR do not show humps in the temperature range from 3.7 to 28 K.     

水热法合成铟锡氧化物纳米粒子的制备及表征

采用三氧化二铟和真空蒸发法制得的纳米锡粉为原料，溶解在一定浓度的氢氧化钠溶液中，水热条件下成功的合成了纳米级的铟锡氧化物粒子，通过粉末X射线衍射（XRD），场发射扫描电子显微镜（FE-SEM），透射电子显微镜（TEM）和紫外可见光光吸收光谱（Uv-Vis）等手段对所得产物进行表征。讨论了反应时间、pH值因素对产物成分和形貌的影响。结果表明：在温度为180℃，10mol／L NaOH溶液的条件下，水热反应36h得到比较均一的产物In1.94Sn0.06O3，产物形貌为均匀的六面体，大小在100nm左右，且对波长在200-400nm的光有强烈的吸收。