Super high-efficiency multi-junction and concentrator solar cells

III–V compound multi-junction (MJ) (tandem) solar cells have the potential for achieving high conversion efficiencies of over 50% and are promising for space and terrestrial applications.We have proposed AlInP–InGaP double hetero (DH) structure top cell, wide-band gap InGaP DH structure tunnel junction for sub cell interconnection, and lattice-matched InGaAs middle cell. In 2004, we have successfully fabricated world-record efficiency concentrator InGaP/InGaAs/Ge 3-junction solar cells with an efficiency of 37.4% at 200-suns AM1.5 as a result of widening top cell band gap, current matching of sub cells, precise lattice matching of sub cell materials, proposal of InGaP–Ge heteroface bottom cell, and introduction of DH-structure tunnel junction. In addition, we have realized high-efficiency concentrator InGaP/InGaAs/Ge 3-junction solar cell modules (with area of 7000 cm²) with an out-door efficiency of 27% as a result of developing high-efficiency InGaP/InGaAs/Ge 3-junction cells, low optical loss Fresnel lens and homogenizers, and designing low thermal conductivity modules.Future prospects are also presented. We have proposed concentrator III–V compound MJ solar cells as the 3rd-generation solar cells in addition to 1st-generation crystalline Si solar cells and 2nd-generation thin-film solar cells. We are now challenging to develop low-cost and high output power concentrator MJ solar cell modules with an output power of 400 W/m² for terrestrial applications and high-efficiency, light-weight and low-cost MJ solar cells for space applications.     

III–V compound multi-junction solar cells: present and future

As a result of top cell material quality improvement, development of optically and electrically low-loss double-hetero structure tunnel junction, photon and carrier confinements, and lattice-matching between active cell layers and substrate, the last 15 years have seen large improvements in III–V compound multi-junction (MJ) solar cells. In this paper, present status of R&D program for super-high-efficiency MJ cells in the New Sunshine Project in Japan is presented. InGaP/InGaAs/Ge monolithic cascade 3-junction cells with newly recorded efficiency of 31.7% at AM1.5 (1-sun) were achieved on Ge substrates, in addition to InGaP/GaAs//InGaAs mechanically stacked 3-junction cells with world-record efficiency of 33.3%. Future prospects for realizing super-high-efficiency and low-cost MJ solar cells are also discussed.     

Novel materials for high-efficiency III–V multi-junction solar cells

As a result of developing wide bandgap InGaP double hetero structure tunnel junction for sub-cell interconnection, InGaAs middle cell lattice-matched to Ge substrate, and InGaP-Ge heteroface structure bottom cell, we have demonstrated 38.9% efficiency at 489-suns AM1.5 with InGaP/InGaP/Ge 3-junction solar cells by in-house measurements. In addition, as a result of developing a non-imaging Fresnel lens as primary optics, a glass-rod kaleidoscope homogenizer as secondary optics and heat conductive concentrator solar cell modules, we have demonstrated 28.9% efficiency with 550-suns concentrator cell modules with an area of 5445 cm². In order to realize 40% and 50% efficiency, new approaches for novel materials and structures are being studied. We have obtained the following results: (1) improvements of lattice-mismatched InGaP/InGaAs/Ge 3-junction solar cell property as a result of dislocation density reduction by using thermal cycle annealing, (2) high quality (In)GaAsN material for 4- and 5-junction applications by chemical beam epitaxy, (3) 11.27% efficiency InGaAsN single-junction cells, (4) 18.27% efficiency InGaAs/GaAs potentially modulated quantum well cells, and (5) 7.65% efficiency InAs quantum dot cells.     

Annual output estimation of concentrator photovoltaic systems using high-efficiency InGaP/InGaAs/Ge triple-junction solar cells based on experimental solar cell's characteristics and field-test meteorological data

The temperature dependences of the electrical characteristics of InGaP/InGaAs/Ge triple-junction solar cells under concentration were evaluated. For these solar cells, conversion efficiency (η) decreased with increasing temperature, and increased with increasing concentration ratio owing to an increase in open-circuit voltage. The decrease in η with increasing temperature decreases with increasing concentration ratio. Moreover, the annual output of a concentrator system with a high-efficiency triple-junction cell was estimated utilizing the experimental solar cell's characteristics obtained in this study and field-test meteorological data collected for 1 year at the Nara Institute of Science and Technology, and compared with that of a nonconcentration flat-plate system.     

Evaluation of InGaP/InGaAs/Ge triple-junction solar cell and optimization of solar cell's structure focusing on series resistance for high-efficiency concentrator photovoltaic systems

The series resistance of an InGaP/InGaAs/Ge triple-junction solar cell was evaluated in detail. Series resistance components such as electrode resistance, tunnel junction resistance and lateral resistance between electrodes were estimated separately. The characteristics of the triple-junction solar cell under concentrated light were evaluated by equivalent circuit calculation with a simulation program with integrated circuit emphasis (SPICE). By equivalent circuit calculation, the optimization of cell designs was performed, focusing on series resistance and cell current in order to realize high-efficiency concentrator cells.     

Radiation resistance of high-efficiency InGaP/GaAs tandem solar cells

Radiation resistance of high-efficiency InGaP/GaAs tandem solar cells with a world-record efficiency of 26.9% (AM0, 28°C) has been evaluated by 1 MeV electron irradiation. Degradation in tandem cell performance has been confirmed to be mainly attributed to large degradation in the GaAs bottom cell. Similar radiation resistance with GaAs-on-Ge cells has been observed for the InGaP/GaAs tandem cell. Moreover, recovery of the tandem cell performance has been found due to minority-carrier injection under light illumination or forward bias, which causes defect annealing in InGaP top cells. The optimal design of the InGaP base layer thickness for current matching at end of life (EOL) (after irradiation with 10¹⁵ electrons cm⁻²) has been examined.     

Recent developments in high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells: steps to next-generation PV cells

Dual-junction Ga_0.5In_0.5P/GaAs solar cells on Ge substrates have rapidly gone from small, high-efficiency laboratory cells, to large-area, high-efficiency cells manufactured at Spectrolab in high volume. Over 500,000 of these dual-junction (DJ) cells with 27-cm² area have been produced, with average AM0 load point efficiency of 21.4%. The next step in the evolution of this type of multijunction solar cell has been taken, with the development of triple-junction (TJ) Ga_0.5In_0.5P/GaAs/Ge cells. The addition of the germanium third junction, plus several significant improvements in the device structure, have led to a measured efficiency of 27.0% (AM0, 28°C) at Spectrolab on large-area (>30 cm²) TJ cells. The TJ cell is now in production at Spectrolab. Ga_0.5In_0.5P/GaAs/Ge cells are viable not only for non-concentrating space applications, but also for terrestrial and space concentrator systems. Efficiencies up to 32.3% at 47 suns under the terrestrial AM1.5D spectrum have been achieved.     

Assessment of a low-cost gold-free metallization for III–V high concentrator solar cells

A gold-free metallization is proposed to be used as the grid contact in III–V concentrator solar cells. This metallization is based on the Cu/Ge system which has been reported to attain very low specific contact resistances on n-GaAs. In this letter, we show that metal layers with low resistivity (13 μΩ cm) can be obtained if the copper content in the alloy is around 28% in weight for a wide range of annealing temperatures (400–450 °C). Finally, this metallization has been used to manufacture single-junction GaAs high concentrator solar cells. Efficiencies of 26.2% at 1000 suns have been reached.     

Numerical and experimental research of the characteristics of concentration solar cells

The development of automatic tracking solar concentrator photovoltaic systems is currently attracting growing interest. High concentration photovoltaic systems (HCPVs) combining triple-junction InGaP/lnGaAs/Ge solar cells with a concentrator provide high conversion efficiencies. The mathematical model for triple-junction solar cells, having a higher efficiency and superior temperature characteristics, was established based on the one-diode equivalent circuit cell model. A paraboloidal concentrator with a secondary optic system and a concentration ratio in the range of 100X–150X along with a sun tracking system was developed in this study. The GaInP/GalnAs/Ge triple-junction solar cell, produced by AZUR SPACE Solar Power, was also used in this study. The solar cells produced by Shanghai Solar Youth Energy (SY) and Shenzhen Yinshengsheng Technology Co. Ltd. (YXS) were used as comparison samples in a further comparative study at different concentration ratios (200X–1000X). A detailed analysis on the factors that influence the electrical output characteristics of the InGaP/lnGaAs/Ge solar cell was conducted with a dish-style concentrating photovoltaic system. The results show that the short-circuit current (I_sc) and the open-circuit voltage (V_oc) of multi-junction solar cells increases with the increasing concentration ratio, while the cell efficiency (η_c) of the solar cells increases first and then decreases with increasing concentration ratio. With increasing solar cell temperature, I_sc increases, while V_oc and η_c decrease. A comparison of the experimental and simulation results indicate that the maximum root mean square error is less than 10%, which provides a certain theoretical basis for the study of the characteristics of triple-junction solar cell that can be applied in the analysis and discussion regarding the influence of the relevant parameters on the performance of high concentration photovoltaic systems.     

Evaluation of temperature characteristics of high-efficiency InGaP/InGaAs/Ge triple-junction solar cells under concentration

Temperature characteristics of the open-circuit voltage (V_oc) were investigated in the temperature range from 30°C to 240°C for the InGaP/InGaAs/Ge triple-junction cells. Also, single-junction cells that had the similar structure to the subcells in the triple-junction cells were studied. In the high-temperature range (from 170°C to 240°C), the temperature coefficients of V_oc of the InGaP/InGaAs/Ge triple-junction solar cell (dV_oc/dT) were different from those in the low-temperature range (from 30°C to 100°C). This is because photo-voltage from the Ge subcell becomes almost 0 V in the high-temperature range. It was found that the open-circuit voltage of a Ge single-junction cell reduced to almost 0 V temperatures over 120°C under 1 sun condition.     

Present status and future prospects of super high efficiency III–V compound solar cells

This paper presents recent development, cost analysis and possible applications of super high-efficiency III–V compound semiconductor solar cells. Japanese R&D programs of these solar cells in the New-Sunshine project of MITI (Ministry of International Trade and Industry) is briefly described. It also discusses future predictions for the super high-efficiency multi-junction solar cells.     

Uniqueness verification of direct solar spectral index for estimating outdoor performance of concentrator photovoltaic systems

To analyze the impact of a direct spectral distribution of the solar spectrum on the outdoor performance of concentrator photovoltaic (CPV) systems, an index for the direct spectral distribution is needed. Average photon energy (APE), the average energy of a photon in the direct solar spectrum, is one of these indexes. In this contribution, the uniqueness of APE to the direct solar spectral distribution is statistically analyzed to assure that an APE value uniquely yields the shape of a direct solar radiation spectrum. The results have exhibited the uniqueness of the direct normal solar spectrum with each APE value, in which the standard deviations are quite small. Short-circuit current density of the InGaP/InGaAs/Ge triple-junction solar cell in the CPV system is additionally calculated using the direct spectral irradiance with different APE values. It is revealed that APE is a useful index to describe the direct spectral distribution to evaluate the outdoor performance of the CPV systems.     

Present status and future of crystalline silicon solar cells in Japan

Crystalline silicon solar cells show promise for further improvement of cell efficiency and cost reduction by developing process technologies for large-area, thin and high-efficiency cells and manufacturing technologies for cells and modules with high yield and high productivity.In this paper, Japanese activities on crystalline Si wafers and solar cells are presented. Based on our research results from crystalline Si materials and solar cells, key issues for further development of crystalline Si materials and solar cells will be discussed together with recent progress in the field. According to the Japanese PV2030 road map, by the year 2030 we will have to realize efficiencies of 22% for module and 25% for cell technologies into industrial mass production, to reduce the wafer thickness to 50–100 μm, and to reduce electricity cost from 50 Japanese Yen/kWh to 7 Yen/kWh in order to increase the market size by another 100–1000 times.     

Flexible, long-lived, large-area, organic solar cells

We report herein large area (>10 cm²), interconnected organic solar cell modules both on glass substrates as well as on flexible ultra-high barrier foils, reaching 1.5% and 0.5% overall power conversion efficiency under AM1.5 conditions. Series connection is described, as these modules consist of up to three cells. Using our flexible barrier material, a shelf lifetime of polythiophene-based solar cells of 6000 h could be realized. Furthermore, we compare the photovoltaic performance of efficient conjugated polymer:fullerene solar cell modules with established technologies. Under typical indoor-office lighting, our modules are competitive with these systems.     

Radiation resistant AlGaAs/GaAs concentrator solar cells with internal Bragg reflector

The problem of increasing efficiency, reliability and radiation resistance of solar cells based on AlGaAs/GaAs heterostructures can be solved by using an internal Bragg reflector. The Bragg reflector as a back surface reflector and as a back surface potential barrier which allows to conserve the high photosensitivity in the long- and middle-wavelength parts of the spectrum after electron and proton irradiation. The effect of base doping and base thickness on the radiation resistance of AlGaAs/GaAs solar cells with the internal Bragg reflector has been investigated. Concentrator solar cells efficiency and related parameters before and after 3 MeV electron irradiation at the fluence up to 3×10¹⁵ cm⁻² are represented. A base doping level of 1×10¹⁵ cm⁻³ and base thickness in the range 1.1–1.6 μm give an EOL AM0 efficiency of 15.8% (BOL–22%) at 30 Suns concentration after exposure to 1×10¹⁵ cm⁻² electron fluence. This EOL efficiency is among the highest reported for GaAs single-junction concentrator cells under AM0 conditions. Making the base doping level lower and the base thinner allows retaining a j_EOL/j_BOL ratio of 0.96 upon exposure up to 3×10¹⁵e/cm² 3 MeV electron fluence. These results are additionally supported by the modeling calculations of the relative damage coefficient.     

High-efficiency CIGS solar cells with modified CIGS surface

CIGS films were treated in In–S aqueous solution for high-efficiency CIGS solar cells. The In–S aqueous solution contained InCl₃ and CH₃CSNH₂ (thioacetamide). The In–S treatment modified the CIGS surface favorably for high-efficiency CIGS solar cells as evidenced by the increase in V_oc, J_sc and FF. The In–S treatment formed thin CuInS₂ layer on the CIGS surface which contributes to the high efficiency and stable performance of the CIGS solar cell. The best cell showed an efficiency of 17.6% (V_oc=0.649 V, J_sc=36.1 mA/cm² and FF=75.1%) without any annealing and light soaking before I–V measurement.     

Radiation-resistant solar cells for space use

This paper reviews the present status of radiation-resistant solar cells made with Si, GaAs, InP and InGaP/GaAs for space use. At first, properties of radiation-induced defects in semiconductor materials and solar cells are described based on an anomalous degradation of Si space solar cells under high-energy, high-fluence electron and proton irradiations. Advantages of direct bandgap materials as radiation-resistant space cells are presented. Unique properties of InP as radiation-resistant cells have also been found. A world-record efficiency of 26.9% (AM0) has been obtained for an InGaP/GaAs tandem solar cell. Radiation-resistance of the InGaP/GaAs tandem cells is described.     

A simple method for quantifying spectral impacts on multi-junction solar cells

A method to quantify spectral effects on the electric parameters of multi-junction solar cells is presented. The method is based on measuring the short circuit current of at least two monitor cells. Ideally these monitor cells have the same spectral responses as the subcells in the investigated multi-junction solar cell. In contrast to the subcells, the current of the individual monitor cells can be measured separately. This allows conclusions to be drawn about the spectral impact on the current mismatch of the multi-junction solar cell. A spectrometric evaluation method is then applied.The method has been tested experimentally with three concentrator modules using III-V triple-junction solar cells. These modules were measured outdoors for several months under variable solar spectral conditions. In parallel, the IV curves of the modules and the current of two component cells were measured. A spectral parameter Z was derived from the monitor cell current signals, which was correlated to the short circuit current and the fill factor of the modules. A linear correlation was found between Z and the normalized short circuit current of the concentrator modules. Translation equations were derived from the linear correlation. These enable the calculation of a module’s short circuit current under any spectral conditions. In particular, the short circuit currents of the modules were derived for direct normal irradiance of 850 W/m² and spectral conditions corresponding to the AM1.5d low AOD spectrum. This is an important step towards comparing the performance of modules which show strong spectral sensitivity. Future rating methods can benefit from the presented simple method for quantifying spectral impacts on multi-junction solar cells. Furthermore, the method can be of interest for tuning the spectrum of pulsed solar simulators.     

High concentration photovoltaic systems applying III–V cells

High concentration systems make use of the direct solar beam and therefore are suitable for application in regions with high annual direct irradiation values. III–V PV cells with a nominal efficiency of up to 39% are readily available in today's market, with further efficiency improvements expected in the years ahead. The relatively high cost of III–V cells limits their terrestrial use to applications under high concentration, usually above 400 suns. In this way the relatively high cell cost is compensated through the low amount for cells needed per kW nominal system output.This paper presents a state of the art of high concentration photovoltaics using III–V cells. This PV field accounts already for more than 20 developed systems, which are commercially available or shortly before market introduction.     

Microcrystalline silicon thin film solar modules on glass

We developed microcrystalline silicon (μc-Si:H) thin film solar modules on textured ZnO-coated glass. The single junction (p–i–n) cell structure was prepared by plasma-enhanced chemical vapour deposition (PECVD) at substrate temperatures below 250 °C. Front ZnO and back contacts were prepared by sputtering. A process for the monolithic series connection of μc-Si:H cells by laser scribing was developed. These microcrystalline p–i–n modules showed aperture area efficiencies up to 8.3% and 7.3% on aperture areas of 64 and 676 cm², respectively. The temperature coefficient of the efficiency was −0.4%/K.