Effect of annealing on conversion efficiency of nanostructured CdS/CuInSe2 heterojunction thin film solar cell prepared by chemical ion exchange route at room temperature

We report, the effect of air annealing on solar conversion efficiency of chemically grown nanostructured heterojunction thin films of CdS/CuInSe₂, such 100, 200 and 300 °C air annealed thin films characterized for physicochemical and optoelectronic properties. XRD pattern obtained from annealed thin films confirms tetragonal crystal geometry of CuInSe₂ and an increase in average crystallite size from 16 to 32 nm. An EDAX spectrum confirms expected and observed elemental composition in thin films. AFM represents high energy induced grain growth and agglomeration due to polygonization process. Increase in optical absorbance strength and decrease in energy band gap from 1.36 to 1.25 eV is observed. Increase in charge carrier concentration from 2 × 10¹⁶ to 8 × 10¹⁷ cm^?3 is observed as calculated from Hall effect measurements and an enhancement in solar conversion efficiency from 0.26 to 0.47% is observed upon annealing.     

Influence of thermal annealing on optical properties and surface morphology of NiOx thin films

NiO_x thin films were deposited by reactive DC-magnetron sputtering from a nickel metal target in Ar + O₂ with the relative O₂ content of 5%. Thermal annealing effects on optical properties and surface morphology of NiO_x films were investigated by X-ray photoelectron spectroscopy, thermogravimetric analysis, scanning electron microscope and optical measurement. The results showed that the changes in optical properties and surface morphology depended on the temperature. The surface morphology of the films changed obviously as the annealing temperature increased due to the reaction NiO_x → NiO + O₂ releasing O₂. The surface morphology change was responsible for the variation of the optical properties of the films. The optical contrast between the as-deposited films and 400 °C annealed films was about 52%. In addition, the relationship of the optical energy band gap with the variation of annealing temperature was studied.     

Synthesis and characterization of CuInSe2 nanoparticles via a solution method

Pure CuInSe₂ nanoparticles have been successfully synthesized via a solution method in the solvent of oleylamine. Anhydrous InCl₃, CuCl, and Se powder were used as the starting materials. The CuInSe₂ samples were characterized by XRD, TEM, and XPS techniques. It was found that tetragonal chalcopyrite structured CuInSe₂ nanoparticles were obtained with temperature above 230 °C. Sample prepared at 200 °C possesses triangular morphology and a minute amount of In₂Se₃ coexists as intermediate. CuInSe₂ nanoparticles with size of 20.2 ± 0.4 nm were prepared at 230 °C and the narrow size distribution was ascribed to the employment of hot injection, which was better for homogeneous nucleation. Stable “ink” can be formed when the as-synthesized CuInSe₂ nanoparticles were dispersed in organic solvents such as hexane and tolune, and such “ink” might have a practical application in CuInSe₂-based solar cells.     

Synthesis and characterization of thermally evaporated Cu2SnSe3 ternary semiconductor

Copper Tin Selenide (CuSnSe) powder was mechanically alloyed by high energy planetary ball milling, starting from elemental powders. Synthesis time and velocity have been optimized to produce Cu₂SnSe₃ materials. Thin films were prepared by thermal evaporation on Corning glass substrate at T_s = 300 °C. The structural, compositional, morphological and optical properties of the synthesized semiconductor have been analyzed by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM) and transmission electron microscopy. The analyzed powder exhibited a cubic crystal structure, with the presence of Cu₂Se as a secondary phase. On the other hand, the deposited films showed a cubic Cu₂SnSe₃ ternary phase and extra peaks belonging to some binary compounds. Furthermore, optical measurements showed that the deposited layers have a relatively high absorption coefficient of 10⁵ cm⁻¹ and present a band gap of 0.94 eV.     

Chemical bath deposition and characterization of electrochromic thin films of sodium vanadium bronzes

Thin yellow-orange films of sodium vanadium oxide bronzes have been prepared from a sodium–vanadium solution (1:1) at 75 °C and pH = 3. The composition, structure and morphology of the films have been studied by XRD, IR spectroscopy, TG and SEM–EDX analyses. It has been established that the prepared films are a phase mixture of hydrated NaV₆O₁₅ (predominant component) and Na_1.1V₃O_7.9 with total water content of 10.58%.The sodium vanadium bronze thin films exhibit two-step electrochromism followed by color change from yellow-orange to green, and then from green to blue. The cyclic voltammetry measurements on the as-deposited and annealed vanadium bronze films reveal the existence of different oxidation/reduction vanadium sites which make these films suitable for electrochromic devices. The annealing of the films at 400 °C changes the composition, optical and electrochemical properties     

Structural and optical properties of BaTi2O5 thin films prepared by pulsed laser deposition at different substrate temperatures

BaTi₂O₅ thin films were prepared on MgO (1 0 0) substrates by pulsed laser deposition. The effect of substrate temperature (T_sub) on the structural and optical properties of the films, such as crystal phase, preferred orientation, crystallinity, surface morphology, optical transmittance and bandgap energy, was investigated. The preferred orientation of the films changed form (7 1 0) to (0 2 0) depending on T_sub, and the b-axis oriented BaTi₂O₅ thin film could be obtained at T_sub = 973–1023 K. The surface morphology of the films was different with changing T_sub, which showed a dense surface with an elongated granular texture at T_sub = 973–1023 K. The crystallinity and surface roughness increased at the elevated substrate temperatures. The as-deposited BaTi₂O₅ thin films were highly transparent with an optical transmittance of ～70%. The bandgap energy was found to decrease with increasing substrate temperature, from 3.76 eV for T_sub = 923 K to 3.56 eV for T_sub = 1023 K.     

Xe irradiation-induced defects in CuInSe2 by phase resolved photoacoustic spectroscopy

We report a study on the optical properties of 40 keV Xe⁺ implants with a dose of 5 × 10¹⁶ ions/cm² into p-type conducting CuInSe₂ single crystals using the phase resolved method of the photoacoustic spectroscopy (PAS) technique. Photoacoustic spectra have been measured in the photon energy range 0.7 < hν < 1.4 eV prior and after implantation at various phase angles using a high resolution fully computerized spectrometer. Once the spectra separation is carried out, an analysis on the impact of Xe⁺ on the defect structure of CuInSe₂ is presented. The results obtained here are discussed in the light of current reported literature.     

Effects of the sulfidation temperature on the structure,composition and optical properties of ZnS films prepared by sulfurizing ZnO films

Nanocrystalline ZnS films have been prepared by sulfidation of the reactive magnetron sputtered ZnO films. The structure, composition and optical properties of the sulfurized ZnO films as a function of the sulfidation temperature (T_S) have been systematically studied. It is found that at T_S ⩾ 400 °C ZnO is completely converted to ZnS with the hexagonal structure. The ZnS films have a strongly (0 0 2) preferred orientation and an optical transparency of about 80% in the visible region. In addition, at T_S < 444.6 °C (boiling point of sulfur), some residual sulfur decomposed from H₂S gas can adhere to the sulfurized film surface while at T_S = 580 °C a S/Zn ratio much higher than the ideal stoichiometric proportion of ZnS is obtained for the ZnS films. ZnS films with a minimum XRD FWHM value of 0.165° and a good S/Zn ratio of 0.99 are obtained at a temperature of 500 °C indicating the ZnS films to be suitable for use in the thin film solar cells.     

Structural and optical properties of In doped Se–Te phase-change thin films: A material for optical data storage

Se_75−xTe₂₅In_x (x = 0, 3, 6, & 9) bulk glasses were obtained by melt quench technique. Thin films of thickness 400 nm were prepared by thermal evaporation technique at a base pressure of 10⁻⁶ Torr onto well cleaned glass substrate. a-Se_75−xTe₂₅In_x thin films were annealed at different temperatures for 2 h. As prepared and annealed films were characterized by X-ray diffraction and UV–Vis spectroscopy. The X-ray diffraction results show that the as-prepared films are of amorphous nature while it shows some poly-crystalline structure in amorphous phases after annealing. The optical absorption spectra of these films were measured in the wavelength range 400–1100 nm in order to derive the extinction and absorption coefficient of these films. It was found that the mechanism of optical absorption follows the rule of allowed non-direct transition. The optical band gap of as prepared and annealed films as a function of photon energy has been studied. The optical band gap is found to decrease with increase in annealing temperature in the present glassy system. It happens due to crystallization of amorphous films. The decrease in optical band gap due to annealing is an interesting behavior for a material to be used in optical storage. The optical band gap has been observed to decrease with the increase of In content in Se–Te glassy system.     

The role of various boron precursor on superconducting properties of MgB2/Fe

The superconducting properties of Fe sheathed MgB₂ wire has been studied as a function of precursor B powder particle size. The in situ processed MgB₂ samples were prepared by means of conventional solid state reaction method with magnesium powder (99.8%, 325 mesh) and three different types of amorphous boron powders (purity; 98.8%, >95% and 91.9%) from two sources, Pavezyum (Turkish supplier) and Sigma Aldrich. The particle sizes of Turkish boron precursor powder were selected between 300 and 800 nm. The structural and magnetic properties of the prepared samples were investigated by means of the X-ray powder diffraction (XRD) and ac susceptibility measurements. The XRD patterns showed that the diffraction peaks for our samples belong to the main phase of the MgB₂ diffraction patterns. The highest critical temperature, T_c = 38.4 K was measured for the MgB₂ sample which was fabricated by using the 98.8% B. The critical current density of this sample was extracted from the magnetization measurements and J_c = 5.4 × 10⁵ A cm⁻² at 5 K and B = 2 T. We found that the sample made by using the 98.8% boron showed almost 2 times higher J_c than that of obtained from 91.9% B powder.     

Spectroscopic ellipsometry and magneto-transport investigations of Mn-doped ZnO nanocrystalline films deposited by a non-vacuum sol–gel spin-coating method

Nanocrystalline Zn_1?xMn_xO films (x = 0, 0.05, 0.1, 0.15, and 0.2) were deposited onto corning glass substrates by a non-vacuum sol–gel spin coating method. All of the films were annealed at 450 °C for 2 h. The structural, optical and magneto-transport properties were investigated by X-ray diffraction, spectroscopic ellipsometry and a system for the measurement of the physical properties. X-ray diffraction analysis of the films reveals that the Mn-doped ZnO films crystallize in the form of a hexagonal wurtzite-type structure with a crystallite size decreases with an increase of the Mn concentration. It was also found that the microstrain increases with the increase of the Mn content. Evidence of nanocrystalline nature of the films was observed from the investigation of surface morphology using transmission, scanning electron microscopy and atomic force microscopy. The optical constants and film thicknesses of nanocrystalline Zn_1?xMn_xO films were obtained by fitting the spectroscopic ellipsometric data (ψ and Δ) using a three-layer model system in the wavelength range from 300 to 1200 nm. The refractive index was observed to increase with increasing Mn concentration. This increase in the refractive index with increasing Mn content may be attributed to the increase in the polarizability due to the large ionic radius of Mn²⁺ compared to the ionic radius of Zn²⁺. The optical band gap of the nanocrystalline Mn–ZnO films was determined by an analysis of the absorption coefficient. The direct transition of the series of films was observed to have energies increasing linearly from 3.17 eV (x = 0) to 3.55 eV (x = 0.2). Magnetoresistance (MR) was measured from 5 K to 300 K in a magnetic field of up to 6 T. Low-field positive MR and high-field negative MR were detected in Mn-doped ZnO at 5 K. Only negative MR was observed for temperatures above 200 K. The positive MR in Mn-doped ZnO films was observed to decrease drastically when the temperature increased from 5 K to 100 K. The isothermal MR of Zn_1?xMn_xO films with different Mn concentrations at 5 K reveals that the increase of the Mn content induces a giant positive MR above x = 0.05 and reaches up to 55% at an applied field of 30 kOe for x = 0.2.     

Structural and optical analyses of polycrystalline Zn1−xSbxSe thin films prepared by resistive heating technique

Here we report the influence of Sb doping on the structural and optical properties of Zn_1−xSb_xSe (0 ⩽ x ⩾ 0.15) thin films prepared by thermal evaporation technique on glass substrate. Various characterization techniques such as X-ray diffraction (XRD), EDS, Raman spectroscopy and spectroscopic ellipsometer are employed to assess the structural and optical properties of the deposited films. XRD analysis reveals the formation of polycrystalline cubic structure having preferred growth orientation along (1 1 1) plane without any evidence of secondary phases. Crystallographic parameters like grain size, micro strain, dislocation density, number of crystallites per unit area and texture coefficient point out the structural modification in ZnSe films with Sb inclusion. Raman analysis shows the existence of three 1LO, 2LO and 3LO phonon modes at 251, 511 and 745 cm⁻¹ in pure ZnSe while 3LO mode disappears by the incorporation of Sb atoms in ZnSe matrix. Increase in FWHM of Raman peaks with Sb concentration also indicates the change in crystalline quality of ZnSe films which is in accordance with our XRD results. Spectroscopic ellipsometry results demonstrate a decreasing trend for the optical band gap energy (from 2.61 eV to 1.81 eV) with increasing Sb content.     

FTIR and ellipsometry characterization of ultra-thin ALD TaN films

In this paper, Fourier-transform infrared (FTIR) spectroscopy and ellipsometric spectroscopy were used to characterize the optical properties of atomic layer-deposited (ALD) ultra-thin TaN films on a Si(1 0 0) single crystal. The analysis of FTIR spectra indicates that the incorporated impurities are in the form of radicals of NH_x, CH_x and OH_x. SiH_x is also detected due to interfacial reactions between NH_x and the Si substrate native oxide. These H-containing radicals can be removed by post-annealing the samples. The vibration of Ta–N bonding is at the wavenumber of 1190 cm⁻¹, which is independent of the film thickness and post-annealing temperature. The results of ellipsometric spectra show that the band gaps are 3.28 eV, 2.65 eV and 2.50 eV as the films thicknesses are 1 nm, 5 nm and 10 nm, respectively. A slight red-shift of the band gap takes place after annealing the ultra-thin films. The mechanisms of the film optical properties were analyzed in the paper.     

Enhanced photoluminescence and electrical properties of 0-3 type ZnO/Bi3.6Eu0.4Ti3O12 nanocomposite thin films

0-3 type ZnO/Bi_3.6Eu_0.4Ti₃O₁₂ (BEuT) nanocomposite films with ZnO nanopowders in BEuT host were prepared by chemical solution deposition. The effects of ZnO content on the structure, photoluminescence, and electrical properties of the films were investigated. The ZnO/BEuT molar ratio strongly affected the grain size and growth orientation of BEuT, dielectric and ferroelectric properties, as well as emission intensity. The nanocomposite films showed strong red emission peaks due to ⁵D₀ → ⁷F₁ and ⁵D₀ → ⁷F₂ transitions of Eu³⁺ ions. Good electrical properties with high dielectric constant of 480 (at 1 kHz) and large remanent polarization (2P_r) of 32 μC/cm² were obtained for the nanocomposite films having a ZnO/BEuT molar ratio of 1:2. The mechanisms for enhanced photoluminescence and electric properties were discussed. The results suggest that the nanocomposite thin films are promising candidate materials for multifunctional optoelectronic devices.     

Microwave synthesis of calcium bismuth niobate thin films obtained by the polymeric precursor method

The crystal structure, surface morphology and electrical properties of layered perovskite calcium bismuth niobate thin films (CaBi₂Nb₂O₉-CBN) deposited on platinum coated silicon substrates by the polymeric precursor method have been investigated. The films were crystallized in a domestic microwave and in a conventional furnace. X-ray diffraction and atomic force microscopy analysis confirms that the crystallinity and morphology of the films are affected by the different annealing routes. Ferroelectric properties of the films were determined with remanent polarization P_r and a drive voltage V_c of 4.2 μC/cm² and 1.7 V for the film annealed in the conventional furnace and 1.0 μC/cm² and 4.0 V for the film annealed in microwave furnace, respectively. A slight decay after 10⁸ polarization cycles was observed for the films annealed in the microwave furnace indicating a reduction of the domain wall mobility after interaction of the microwave energy with the bottom electrode.     

Antibacterial,cytotoxicity and physical properties of laser — Silver doped hydroxyapatite layers

Hydroxyapatite layers with silver doping from 0.06 at.% to 14 at.% were prepared by laser deposition. The films' physical properties such as morphology, composition, crystallinity, Young's modulus and microhardness were measured. Films were amorphous or polycrystalline in dependence on deposition temperature (from RT to 600 °C). Antibacterial properties were tested using Escherichia coli and Bacillus subtilis cells. The antibacterial efficacy changed with silver doping from 4% to 100%. Cytotoxicity was studied by a direct contact test. Depending on doping and crystallinity the films were either non-toxic or mildly toxic.     

Epitaxial growth of non-polar m-plane ZnO thin films by pulsed laser deposition

Non-polar ZnO thin films were deposited on m-plane sapphire substrates by pulsed laser deposition at various temperatures from 300 to 700 °C. The effects of growth temperature on surface morphology, structural, electrical, and optical properties of the films were investigated. All the films exhibited unique m-plane orientation indicated by X-ray diffraction and transmission electron microscopy. Based on the scanning electron microscopy and atomic force microscopy, the obtained films had smooth and highly anisotropic surface, and the root mean square roughness was less than 10 nm above 500 °C. The maximum electron mobility was ～18 cm²/V s, with resistivity of ～0.26 Ω cm for the film grown at 700 °C. Room temperature photoluminescence of the m-plane films was also investigated.     

Optical nonlinearities of BaTiO3 matrix-embedded Au nanoparticles

Composite thin films Au/BaTiO₃ comprising nanometer-sized gold particles embedded in BaTiO₃ matrices were synthesized on MgO(1 0 0) substrates by co-depositing Au and BaTiO₃ targets using pulsed laser deposition technique. The nanostructure of the films and the size distributions of the Au particles were analyzed by high-resolution transmission electron microscopy. Crystal lattice fringes from the Au nanocrystals and BaTiO₃ matrices were observed. The nonlinear optical properties of the Au/BaTiO₃ films were measured using z-scan method at the wavelength of 532 nm with a laser duration of 10 ns. The nonlinear refractive index n₂ and the nonlinear absorption coefficient β were determined to be 2.72 × 10⁻⁶ esu and −1.1 × l0⁻⁶ m/W, respectively.     

AlCu alloy films prepared by the thermal diffusion technique

100-nm thick films of Al_1 ? xCu_x alloys were prepared on glass substrates by thermal diffusion technique. The Cu atomic concentration was varied from 10% to 90%. Alloys were prepared at different temperatures into a vacuum oven with Argon atmosphere. Two thermal processes were used: i) heating the film at 400 °C in a single step, and ii) heating the films in sequential steps at 100, 200, 300 and 400 °C. Morphology, electrical resistivity, and crystalline orientation of the alloys were studied. The electrical resistivity and surface roughness of the alloys were found to depend strongly on the atomic composition and the diffusion temperature. However, we did not find differences between samples prepared under the two thermal processes. Alloys prepared with x = 0.6 and x = 0.1–0.3 as Cu at concentration exhibited values on electrical resistivity and surface roughness lower than pure Al. Different phases of the Al_1 ? xCu_x films were observed as a function of Cu concentration showing a good agreement with the AlCu phase diagram.     

Mechanical synthesis of high purity Cu–In–Se alloy nanopowder as precursor for printed CISe thin film solar cells

Mechanical alloying and ball milling are low cost, up-scalable techniques for the preparation of high purity chalcogenide nanopowders to be used as precursor material for printing thin film solar cells. In this study, high purity copper indium selenium (Cu–In–Se) alloy nanopowders with 20–200 nm particle size were synthesized from macroscopic elemental Cu, In and Se powders via mechanical alloying and planetary ball milling. The particle size distribution, morphology, composition, and purity level of the synthesized Cu–In–Se alloy nanopowders were investigated. Thin Cu–In–Se alloy nanopowder ink coatings, deposited on Mo-coated glass substrates by doctor blading, were converted into a CuInSe₂ semiconductor film by selenization heat treatment in Se vapor. The CuInSe₂ film showed semiconducting band gap around 1 eV measured by photoluminescence spectroscopy. CuInSe₂ absorber layer based thin film solar cell devices were fabricated to assess their performance. The solar cell device showed a total efficiency of 4.8%, as measured on 0.25 cm² area cell.