无线激光通信系统中DPIM技术研究

为了改善通信的带宽效率、功率需求,以及信道中信号传输的抗干扰性能,对应用于无线激光通信系统中的DPIM(数字脉冲间隔调制)方式进行了研究。通过仿真分析,比较了OOK(开关键控)、PPM(脉冲位置调制)、DPPM(差分脉冲位置调制)以及DPIM方式的功率、带宽、单位传信率和差错性能。根据DPIM的理论分析,设计了一种以FPGA(现场可编程门阵列)为核心的DPIM系统。结果表明,该调制系统性能稳定,可以达到较高的调制速率。     

紫外光通信调制方式的对比研究

紫外光非视距通信是一种新型的无线光通讯形式,近年来受到各军事强国越来越广泛的关注。详细分析了启闭键控调制(OOK)、脉冲位置调制(PPM)、差分脉冲位置调制(DPPM)和数字脉冲间隔调制(DPIM)的编码结构,然后从带宽需求、平均发射功率、传输容量和差错性能等方面对各种调制方式进行了仿真对比。结果表明,DPIM调制比PPM具有更高的传输容量和更少的带宽需求,并且解调对同步要求较低,实现更简易,并结合紫外LED阵列将作为今后实用化紫外光源的发展趋势,DPIM调制在未来紫外光通信系统的应用中将具有更大的优势。     

大气无线光通信系统中数字脉冲间隔调制研究

基于光强闪烁的大气无线光通信系统模型,研究了数字脉冲间隔调制(DPIM)方式的差错性能,分析了符号结构、发射功率、带宽需求等问题,并与 OOK(开关键控)和 PPM(脉冲位置调制)调制方式进行比较。理论和仿真研究结果表明,DPIM 调制方式较 PPM 方式有较高的功率效率和较少的带宽需求,特别是在系统实现上相对于 PPM 大大简化。因此 DPIM 应用于无线光通信系统具有一定优势。     

无线光DH-PIM与DPIM调制方式的性能研究

为了解决目前无线光通信采用的调制方式误包率大、传信率低等问题,研究了双头脉冲间隔调制(DH-PIM)和数字脉冲间隔调制(DPIM)的性能。分析了DPIM和DH-PIM两种调制方式的符号结构,比较了二者的传信率以及给定模型下的误包率。仿真与分析结果表明,DH-PIM的传信率较高,适合于实时性要求较高的传输系统,而DPIM的平均发射功率低,误包率较小,适合于要求低功率或高可靠性的系统。     

无线光通信中的定长双幅度脉冲间隔调制

在无线光通信中,为解决脉冲位置调制(PPM)需要符号同步和数字脉冲间隔调制(DPIM)符号长度不同定造成调制器等待或缓冲器溢出的问题,提出了一种新的调制方式--定长双幅度脉冲间隔凋制(FDAPIM),分析了它的符号结构、发射功率、带宽需求以及在高斯白噪声的差错性能,并和开关键控(OOK)、脉冲位置调制(PPM)、数字脉冲间隔调制(DPIM)、定长数字脉冲间隔调制(FDPIM)等调制方式进行了比较.理论分析与仿真结果表明,FDAPIM的误包率劣于PPM和DPIM,接近于FDPIM,但明显优于OOK.虽然FDAPIM的带宽要求较高,但其带宽效率和功率效率都优于FDPIM,且不需要符号同步,相对于PPM系统,实现的复杂性大大简化;相对于DPIM,其符号长度固定,不会引起调制器等待或缓冲器溢出.因此FDAPIM应用于无线光通信系统具有一定优势.     

一种新型的无线光通信调制方法

针对脉冲位置调制(PPM)和数字脉冲间隔调制(DPIM)等方法存在的问题,提出了一种新的双宽脉冲位置调制(DD-PPM)方式.在给出其符号结构的基础上,分析了带宽需求、传输容量和平均功率,推导出弱湍流信道下的误包率模型,并将其与开关键控调制(OOK),PPM和DPIM等典型调制方式进行了比较.理论分析和仿真结果表明,DD-PPM不仅比OOK具有更高的功率利用率和更好的差错性能,比PPM具有更高的带宽效率和传输容量,比DPIM具有相近甚至略好的差错性能,而且因符号长度固定,解调时不存在等待或缓存器溢出等问题,较DPIM更易工程实现.因而作为一种折中的调制方式,DD-PPM在无线光通信中有一定的应用场合.     

可见光通信调制方式及其性能研究

为了实现白光LED室内照明以及通信的双重功能,根据可见光通信的特点,在分析开关键控调制(OOK)、脉冲位置调制(PPM)、数字脉冲间隔调制(DPIM)以及双头脉冲间隔调制(DH-PIM)结构的基础上,提出一种新型反向双头脉冲间隔调制(RDH-PIM)方式。分析比较了各种调制方式的编码结构、带宽需求以及平均发射功率,推导了系统误时隙率表达式。仿真结果表明,OOK具有最小的带宽需求,RDH-PIM可以获得最大的平均发射功率,且带宽利用率明显优于PPM和DPIM。作为一种折中的调制方式,RDH-PIM在无线光通信中有一定的应用价值。     

基于FPGA平台紫外通信系统的调制技术研究

基于紫外通信系统平台对应用于移动通信和光移动通信的调制方式开关键控(OOK)、脉冲位置键控(PPM),以及新兴的差分脉冲位置键控(DPPM),数字脉冲间隔调制(DPIM)进行了性能仿真,以OOK为基准,比较了四种调制方式的平均发射功率和需求带宽参数;同时对OOK、PPM和DPPM的调制解调方式进行改进和实现,无需进行字...     

紫外光通信脉冲位置索引调制

在紫外光通信中,应当充分考虑带宽需求、差错性能的平衡问题。针对该问题,基于DPIM提出了一种脉冲位置索引调制(Pulse Position Index Modulation)方式,详细描述了调制结构,分析了带宽需求、传输容量和差错性能,并与其他几种调制方式进行了比较。理论分析和仿真结果表明:PPIM的差错性能比OOK、DAPIM、DAPPM、FDAPIM更优,仅劣于DPIM;但其带宽效率优于DPIM、DAPPM、FDAPIM,劣于DAPIM和OOK。PPIM能实现性能方面较好的平衡,在紫外光通信系统中具有一定的应用前景。     

CAP-DPIM可见光混合调制方案

针对可见光通信系统传输性能问题,文章提出了一种无载波幅度相位(CAP)调制与数字脉冲间隔调制(DPIM)结合的混合调制方案。该方案分别利用两者频谱效率和功率效率较高的特点,发送端在脉冲间隔调制的脉冲时隙加载直流偏置光CAP(DCO-CAP)信号,实现混合调制信号的并行生成,接收端通过门限检测和最大似然检测完成混合调制信号的串行解调。推导了室内可见光高斯信道下混合调制方案的误码率(BER)及误帧率(FER)解析表达式。此外,从频谱效率和FER两方面对比分析了该混合调制方案与传统DPIM及DCO-CAP方案的性能优劣。数值仿真结果表明:当频谱效率相同时,混合调制方案较单一调制有更高的可靠性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.