Manifestations of strain-relaxation in the structure of nano-sized Co-2 × 2 islands grown on Ag/Ge(111)-√3 × √3 surface

We have examined strain-relaxation of Co-2 × 2 islands grown on the Ag/Ge(111)-√3 × √3 surface by analyzing scanning tunneling microscopy images. We have found that the Co-2 × 2 islands commonly adopt a more compact arrangement as compared to that of the Ge(111) substrate, however they differ in a degree of an atomic compactness. We have not found a distinct relation between strain-relaxation and the island height. Three groups of islands have been identified upon analyzing a correspondence between strain-relaxation and the island size: (i) small islands (not bigger than 80 nm²) with a high atomic compactness, displaying fixed inter-row distances, (ii) small islands with unfixed distances between atomic rows, and (iii) big islands (bigger than 80 nm²) with fixed inter-row distances, but with a less compact atomic arrangement compared to that of the first two groups. We propose a model to account for the relation between the relaxation and the island size.     

Thermal evolution of the morphology of Ni/Ag/Si(111)-√3 × √3 surface

The temperature-driven changes in morphology of the interface formed by room temperature (RT) deposition of Ni atoms onto an Ag/Si(111)-√3 × √3 surface were investigated by scanning tunneling microscopy. Roughly 70% of Ni deposition diffused into bulk substrate within the temperature range between RT and 573 K. The images as obtained after annealing up to 670 K correspond to the formation of nano-sized islands of nickel silicides. Two types of islands, large triangular islands typical of the whole range of applied coverage, and smaller islands of different shapes, coexist at Ni coverage higher than 1 monolayer. Annealing above 870 K led to the formation of a 7 × 7 phase in coexistence with small 5 × 5 domains at the expense of a complete disappearance of the √3 × √3 phase. Also, formation of Ni,Si alloy was observed at the temperature, along with segregation of bulk-dissolved Ni species onto the surface.     

Electronic structure of Co islands grown on the √3 × √3-Ag/Ge(111) surface

By means of room temperature scanning tunneling spectroscopy (RT STS), we have studied the electronic structure of two different Ag/Ge(111) phases as well as Co islands grown on the √3 × √3-Ag/Ge (111) forming either √13 × √13 or 2 × 2 patterns. The spectrum obtained from 4 × 4-Ag/Ge(111) structure shows the existence of a shoulder at 0.7 V which is also present in the electronic structure of the Ge(111)-c2 × 8 and indicates donation of Ge electrons to electronic states of the Ag-driven phase. However, this fact is not supported by the electronic spectrum taken from the √3 × √3-Ag/Ge (111). The complexity of the Co-√13 × √13 islands bonding with the substrate is mirrored by a large number of peaks in their electronic spectra. The spectra obtained from the Co-2 × 2 islands which had grown on the step differ from those taken from Co-2 × 2 islands located along the edge of the terrace by a number of peaks at negative sample bias. This discrepancy is elucidated in terms of dissimilarities of Co-substrate interaction accompanying Co islands growth on different areas of the stepped surface.     

Growth process of CuO(1 1 1) and Cu2O(0 0 1) thin films on MgO(0 0 1) substrate under metal-mode condition by reactive dc-magnetron sputtering

The growth process of CuO and Cu₂O thin films on MgO(0 0 1) substrates by reactive dc-magnetron sputtering was studied by reflection high-energy electron diffraction (RHEED) and atomic-force microscopy (AFM). The RHEED pattern and AFM image showed that (1) three-dimensional Cu(0 0 1) islands grew on MgO under the nonreactive sputtering condition, (2) CuO(1 1 1) was deposited layer by layer on MgO at 400 °C under the reactive sputtering condition, and (3) the film deposited at 600 °C in the initial growth stage was composed of three-dimensional Cu islands because O₂ gas could not be incorporated into them due to the low sticking coefficient of O₂ on MgO under the reactive sputtering condition. The layer-by-layer CuO(1 1 1) thin-film growth process is discussed from the viewpoint that Cu and oxygen species are supplied in stoichiometry onto the MgO substrate to form CuO thin-film crystals while maintaining minimum interfacial energy between CuO and MgO.     

Structural properties and morphology of Zn(1 − x)CdxO solid solution grown on ZnO and C-plane sapphire substrate

Zn_(1 − x)Cd_xO solid solutions with a composition ranging from pure ZnO up to x = 0.062 have been grown on ZnO and c-plane sapphire substrates by using metal organic chemical vapor deposition. The optical transmission spectra were used to estimate the cadmium mole fraction of the solid solutions. The lattice deformation and morphology of these films were examined in detail using high resolution X-ray diffraction and atomic force microscopy as Cd incorporation and used substrate. Our study reveals significant lattice deformation from x ≥ 0.7%. The atomic force microscopy images show facetted grains for films grown on ZnO substrate but rather round for c-plane sapphire substrate. The grain shape is controlled by the presence of the ionic charges on the polar surface of ZnO which is disturbed by cadmium incorporation and also the employed substrate material.     

Surface phase transitions upon reduction of epitaxial WO3(1 0 0) thin films

The surface structure and morphology of WO₃(1 0 0) thin films were studied using scanning tunneling microscopy (STM) and low-energy electron diffraction. The films experienced a net-reducing environment when annealed in oxygen at 800 K leading to surface phase transitions from p(2×2) to p(4×2), and from p(4×2) to a mix p(4×2) and p(3×2). Increasing the annealing temperature to 830 K in ultra-high-vacuum (UHV) led to a fully p(3×2) reconstructed surface. Continued UHV annealing above 800 K caused (1×1) islands to appear on the p(3×2) surface and the film color to darken. Eventually, prolonged UHV annealing led to a (1×1)-terminated surface with straight steps oriented in [0 0 1] or [0 1 0] directions due to crystallographic shear planes. The randomly spaced steps on the (1×1) surface indicated variations in the local stoichiometry in the film. An added row model proposed for the p(4×2) structure is also shown to be consistent with the p(3×2) structure. The formation of the p(4×2) structure from the p(2×2) structure was attributed to W⁵⁺ migration into the bulk to form the troughs between the added rows. Reduction of the p(4×2) structure caused the troughs to narrow rather than deepen, suggesting that W⁵⁺ or added row surface diffusion competes with migration of reduced W ions into the bulk when the p(3×2) structure forms. The STM images also show evidence that the (1×1) structure forms through coalescence of the added rows.     

Ordered mixed surface structures formed by coadsorption of dissimilar metal atoms on Cu(0 0 1)

We have found that various ordered mixed surface structures are formed by coadsorption of two dissimilar metal atoms on Cu(0 0 1) at room tepmerature, using low-energy electron diffraction (LEED) I-V analysis. As coadsorbates, we employed Mg, Bi, Li and K, and surface structures formed by the coadsorption systems of (Mg, Li), (Mg, K) and (Mg, Bi) are presented. A tensor LEED analysis provided detailed geometries of the coadsorbates and the substrate surface. It was found that the surface structures in the above three coadsorption sytems exhibit the restructuring of the Cu(0 0 1) surface. The phase separation into individual adsorbates does not take place, implying that some additional stabilization arises. We demonstrate two origins for the stabilization of the ordered mixed surface structures on Cu(0 0 1). Structures and features formed by the individual adsorption of Mg, Bi, Li and K atoms on Cu(0 0 1) are described first, then those of (2√2×√2)R45°-Mg,Li, (√5×√5)R26.7°-Mg,K, c(2×2)-Mg,Bi, and c(6×4)-Mg,Bi structures formed by the coadsorption are presented. We consider on the basis of the determined structural parameters the question why ordered mixed surface structures are formed instead of the phase separation.     

From uniform Cu thin films to 〈1 1 0〉 and 〈1 1 1〉 columns

This paper reports the transition phenomenon from uniform Cu thin films to 〈1 1 0〉 and 〈1 1 1〉 columns. Using magnetron sputtering technique, we deposit a series of Cu films on an SiO₂/Si(1 1 1) substrate. Characterizations using the scanning electron microscopy (SEM), the transmission electron microscopy (TEM), and the X-ray diffraction (XRD) reveal the morphology, the crystal orientation and the internal strain of the Cu films and columns. The Cu films are always uniform and 〈1 1 1〉 textured during the early stage of deposition. For higher sputtering power and shorter target-substrate distance, the 〈1 1 1〉 uniform film yields to columns as deposition continues. This transition correlates with the internal strain in the uniform film. At moderate strain, the columns are of 〈1 1 0〉 orientation and they nucleate at the grain boundaries of the uniform film. At even higher strain, the columns are of 〈1 1 1〉 orientation and they form by the breakup of grains in the uniform film. Based on the strain characterization and the column formation mechanism, we suggest that strain energy is the driving force of the transitions from uniform films to columns.     

Structure of Pt3Co(1 1 0)c(2×4)-O surface studied by scanning tunneling microscopy

A Pt₃Co(1 1 0)c(2×4)-O surface has been investigated by scanning tunneling microscopy (STM), low-energy electron diffraction, and Auger electron spectroscopy. At a very initial oxidation stage exposed at 500°C, creation of missing and/or added row structures running to the [0 0 1] direction on clean Pt₃Co(1 1 0)2×1 surface was imaged from the steps. The surface is fully covered by a well-ordered c(2×4) structure at 2 L oxygen exposure. Atomic-resolution STM image shows the added row-type anti-phase Co-O zigzag chains along the [0 0 1] direction. Based on the images, the structure model for the c(2×4) surface was suggested as a first oxidized layer, which comes from the chemical reaction forming stoichiometric Co monoxide. Further oxygen exposure above 5 L, Co-O clusters imaged to large dots were formed on the surface with the size of about 5-7 Å.     

Microstructural properties of Co thin films grown on p-GaAs (1 0 0) Substrates

Microstructural properties of Co thin films grown on p-GaAs (1 0 0) substrates at room temperature by ion beam-assisted deposition were investigated. An atomic force microscopy image showed that the root mean square of the average surface roughness of the Co film was 32.2 Å, and X-ray diffraction and selected area diffraction pattern measurements showed that Co film layers grown on GaAs (1 0 0) substrates were polycrystalline. A bright-field transmission electron microscopy image showed that the Co/p-GaAs (1 0 0) heterointerface grown at room temperature was sudden. These results provide important information on the microstructural properties for Co thin films grown on p-GaAs (1 0 0) substrates at room temperature.     

Half wave rectification of inorganic/organic heterojunction diode at the frequency of 1 kHz

An inorganic/organic vertical heterojunction diode has been demonstrated with p-type Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) deposited by spin coating on n-type Ga-doped ZnO (GZO) thin films. Transparent conducting GZO thin films are deposited on glass substrate by rf-magnetron sputtering. Electrical properties of GZO thin films are investigated depending on the processing temperatures. The resistivity, mobility and carrier concentration of the GZO thin films deposited at processing temperatures of 500 °C are measured to be about 3.6 × 10⁻⁴ Ω cm, 23.8 cm²/Vs and 7.1 × 10²⁰ cm³, respectively. The root mean square surface roughness of the GZO thin films is calculated to be ~ 0.9 nm using atomic force microscopy. Current-voltage characteristics of the n-GZO/p-PEDOT:PSS heterojunction diode present rectifying operation. Half wave rectification is observed with the maximum output voltage of 1.85 V at 1 kHz. Low turn-on voltage of about 1.3 V is obtained and the ideality factor of the n-GZO/p-PEDOT:PSS diode is derived to be about 1.8.     

Simple method for coating Si (1 0 0) surfaces with ferritin monolayers—Iron oxide quantum dots

With the goal to develop iron oxide quantum dots we developed a simple method to spread horse spleen ferritin monolayers on a Si (1 0 0) surface. Application of atomic force microscopy and spectroscopic ellipsometry showed the existence of regions with dense ferritin monolayers. Application of transmission electron microscopy identified the core of the spread ferritin as FeO nanocrystals.     

Doping transition of doped ZnO nanorods measured by Kelvin probe force microscopy

We have investigated the doping transition of one-dimensional (1-D) doped-ZnO nanorods with Kelvin probe force microscopy (KPFM). Vertically aligned (undoped, As-doped, and undoped/As-doped homo-junction) ZnO nanorods were grown on Si (111) substrates without any catalyst by vapor phase transport. Individual ZnO nanorods are removed from the substrates and transferred onto thin Au films grown on Si substrates. The morphology and surface potentials of the nanorods were measured simultaneously by the KPFM. For the homo-junction nanorods with ~ 250 nm in diameter, the KPFM image shows localization of the doping transition along the nanorods. The measured Kelvin signal (surface potential) across the junction induces the work function difference between the undoped and the As-doped region of ~ 85 meV. Also, the work function of As-doped nanorods is ~ 95 meV higher than that of intrinsically undoped nanorods grown in similar conditions. These consistent results indicate that the KPFM is reliable to determine the localization of the doping transition in 1-D structures.     

Theoretical investigation of atomic structure and electronic properties of Ca/Si(110)-(2 × 1) reconstruction

We have presented first-principles total-energy calculations for the adsorption of Ca metals onto a Si(110) surface. The density functional method was employed within its local density approximation to study the atomic and electronic properties of the Ca/Si(110) structure. We considered the (1 × 1) and (2 × 1) structural models for Ca coverages of 0.5 monolayer (ML) and 0.25 ML, respectively. Our total-energy calculations indicate that the (1 × 1) phase is not expected to occur. It was found that Ca adatoms are adsorbed on top of the surface and form a bridge with the uppermost Si atoms. The Ca/Si(110)-(2 × 1) produces a semiconducting surface band structure with a direct band gap that is slightly smaller than that of the clean surface. One filled and two empty surface states were observed in the gap; these empty surface states originate from the uppermost Si dangling bond states and the Ca 4 s states. It is found that the Ca-Si bonds have an ionic nature and complete charge being transferred from Ca to the surface Si atoms. Finally, the key structural parameters of the equilibrium geometry are detailed and compared with the available results for metal-adsorbed Si(110) surface, Ca/Si(001), and Ca/Si(111) structures.     

Adsorption/desorption kinetics of Na atoms on reconstructed Si (111)-7 × 7 surface

Self-assembled nanostructures on a periodic template are fundamentally and technologically important as they put forward the possibility to fabricate and pattern micro/nano-electronics for sensors, ultra high-density memories and nanocatalysts. Alkali-metal (AM) nanostructure grown on a semiconductor surface has received considerable attention because of their simple hydrogen like electronic structure. However, little efforts have been made to understand the fundamental aspects of the growth mechanism of self-assembled nanostructures of AM on semiconductor surfaces. In this paper, we report organized investigation of kinetically controlled room-temperature (RT) adsorption/desorption of sodium (Na) metal atoms on clean reconstructed Si (111)-7 × 7 surface, by X-ray photoelectron spectroscopy (XPS). The RT uptake curve shows a layer-by-layer growth (Frank-vander Merve growth) mode of Na on Si (111)-7 × 7 surfaces and a shift is observed in the binding energy position of Na (1s) spectra. The thermal stability of the Na/Si (111) system was inspected by annealing the system to higher substrate temperatures. Within a temperature range from RT to 350 °C, the temperature induced mobility to the excess Na atoms sitting on top of the bilayer, allowing to arrange themselves. Na atoms desorbed over a wide temperature range of 370 °C, before depleting the Si (111) surface at temperature 720 °C. The acquired valence-band (VB) spectra during Na growth revealed the development of new electronic-states near the Fermi level and desorption leads the termination of these. For Na adsorption up to 2 monolayers, decrease in work function (−1.35 eV) was observed, whereas work function of the system monotonically increases with Na desorption from the Si surface as observed by other studies also. This kinetic and thermodynamic study of Na adsorbed Si (111)-7 × 7 system can be utilized in fabrication of sensors used in night vision devices.     

Antimony assisted low-temperature processing of CuIn1 − xGaxSe2 − ySy solar cells

Application of the Sb-doping method to low-temperature (≤ 400 °C) processing of CuIn_1 − xGa_xSe_2 − yS_y (CIGS) solar cells is explored, using a hydrazine-based approach to deposit the absorber films. Power conversion efficiencies of 10.5% and 8.4% have been achieved for CIGS devices (0.45 cm² device area) processed at 400 °C and 360 °C, respectively, with an Sb-incorporation level at 1.2 mol % (relative to the moles of CIGS). Significant Sb-induced grain size enhancement was confirmed for these low processing temperatures using cross-sectional scanning electron microscopy, and an average 2-3% absolute efficiency improvement was achieved in Sb-doped samples compared to their Sb-free sister samples. With Sb inclusion, the CIGS film grain growth temperature is lowered to well below 450 °C, a range compatible with flexible polymer substrate materials such as polyimide. This method opens up access to opportunities in low-temperature processing of CIGS solar cells, an area that is being actively pursued using both traditional vacuum-based as well as other solution-based deposition techniques.     

Preferentially oriented thin-film growth of CuO(1 1 1) and Cu2O(0 0 1) on MgO(0 0 1) substrate by reactive dc-magnetron sputtering

Copper oxide films deposited on MgO(0 0 1) substrates by reactive magnetron sputtering under the metal-mode condition were studied by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) analyses for structural analysis, and X-ray-excited Auger electron spectroscopy (XAES) for chemical bonding analysis. CuO(1 1 1) thin films grew from their initial growth stage maintaining the same crystallinity on MgO(0 0 1) substrates at 400°C. When the substrate temperature was increased to 600 °C, the as-sputtered films comprise Cu(0 0 1), amorphous Cu₂O phase, and Cu₂O(0 0 1) phase. The Cu(0 0 1) phase was observed at initial growth stage. This is probably because O₂ gas molecules could not sufficiently stick to the MgO substrate at 600 °C. Single phase of Cu₂O(0 0 1) was obtained by the cooling of the as-sputtered films in O₂ atmosphere. The growth of single phase Cu₂O(0 0 1) is considered as a solid-phase heteroepitaxial growth on MgO(0 0 1) surface, which was caused by incorporating O₂ gas into the as-sputtered films.     

Development of smooth CuInGa precursor films for CuIn1 − xGaxSe2 thin film solar cell applications

CuInGa precursor thin films were deposited using a CuGa (75-25 at.%) and an In 3″ diameter target material simultaneously by RF magnetron sputtering. The precursor films were deposited on Si and glass substrates at − 80 °C and room temperature, and characterized by Rutherford backscattering spectroscopy, Auger electron spectroscopy, scanning electron microscopy, atomic force microscopy and X-ray diffraction. The effects of gun power density and substrate temperatures on resulting precursor film properties were investigated. Precursor films deposited at − 80 °C have a smooth morphology with a 75% reduction in all roughness values and are more dense and homogeneous in structure compared to precursors deposited at room temperature. Therefore these precursors will result in better selenization process reproducibility.     

Surfactant-induced layered growth in homoepitaxy of Fe on Fe(100)-c(2 × 2)O reconstruction surface

In this study, the effects of several surfactants (Pb, Bi, and Ag) on the homoepitaxial growth of Fe(100) were studied and compared. The reflection high-energy electron diffraction measurements clearly reveal that these surfactants enhance the layer-by-layer growth of Fe on an Fe(100)-c(2 × 2)O reconstruction surface. The dependence of growth on the surfactant layer thickness suggests that there exists a suitable amount of surfactant layer that induces a smoother layer-by-layer growth. Comparisons between the atomic force microscopy images reveal that the root-mean-square surface roughness of Fe films mediated by Pb and Bi surfactants are considerably smaller than those of the films mediated by Ag surfactant. The Auger electron spectra show that Pb and Bi segregate at the top of the surface. It has been concluded that Pb and Bi are effective surfactants for enhancing layer-by-layer growth in Fe homoepitaxy. Ag has the same effect, but it is less efficient due to the weak surface segregation of Ag.     

Tl2Ba2CaCu2O8 thin films on 2 in. LaAlO3(0 0 1) substrates

High quality Tl₂Ba₂CaCu₂O₈ (Tl-2212) superconducting thin films are prepared on both sides of 2 in. LaAlO₃(0 0 1) substrates by off-axis magnetron sputtering and post-annealing process. XRD measurements show that these films possess pure Tl-2212 phase with C-axis perpendicular to the substrate surface. The thickness unhomogeneity of the whole film on the 2 in. wafer is less than 5%. The superconducting transition temperatures T_cs of the films are around 105 K. At zero applied magnetic field, the critical current densities J_cs of the films on both sides of the wafer were measured to be above 2 × 10⁶ A/cm² at 77 K. The microwave surface resistance R_s of film was as low as 350 μΩ at 10 GHz and 77 K. In order to test the suitability of Tl-2212 thin films for passive microwave devices, 3-pole bandpass filters have been fabricated from double-sided Tl-2212 films on LaAlO₃ substrates.