Growth of polycrystalline and nanocrystalline diamond films on pure titanium by microwave plasma assisted CVD process

Well-faceted polycrystalline diamond (PCD) films were deposited along with nanocrystalline diamond (NCD) films on the pure titanium substrate by a microwave plasma assisted chemical vapor deposition (MWPCVD) system in the environment of CH₄ and H₂ gases at a moderate temperature. Diamond film deposition on pure titanium and Ti alloys is always extremely hard due to the high diffusion coefficient of carbon in Ti, the big mismatch in their thermal expansion coefficients, the complex nature of the interlayer formed during diamond deposition, and the difficulty of attaining very high nucleation density. A well-faceted PCD film and a smooth NCD film were successfully deposited on pure Ti substrate by using a simple two-step deposition technique. Both films adhered well. Detailed experimental results on the preparation, characterization and successful deposition of the diamond coatings on pure Ti are discussed. Lastly, it is shown that smooth NCD film can be deposited at moderate temperature with sufficient diamond quality for mechanical and tribological applications.     

Interfacial structure, residual stress and adhesion of diamond coatings deposited on titanium

The interfacial structures of diamond coatings deposited on pure titanium substrate were analyzed using scanning electron microscopy and grazing incidence X-ray diffraction. Results showed that beneath the diamond coating, there was one titanium carbide and hydride interlayer, followed by a heat-affected and carbon/hydrogen diffused Ti layer. Residual stress in the diamond coating and TiC interlayer under different process parameters were measured using Raman and X-ray diffraction (XRD) methods. Diamond coatings showed large compressive stress on the order of a few giga Pascal. XRD analysis also showed the presence of compressive stress in the TiC interlayer and tensile stress in the Ti substrate. With increasing deposition duration, or decreasing plasma power and concentration of CH₄ in gas mixture, the compressive residual stress in the diamond coating decreased. The large residual stress in the diamond coating resulted in poor adhesion of the coatings to substrate, but adhesion was also related to other factors, such as the thickness and nature of the TiC interlayer, etc. A graded interlayer design was proposed to lower the thermal stress, modify the interfacial structure and improve the adhesion strength.     

Two-step growth of high-quality nano-diamond films using CH4/H2 gas mixture

Diamond films with fine grain size and good quality were successfully deposited on pure titanium substrate using a novel two-step growth technique in microwave plasma-assisted chemical vapor deposition (MWPCVD) system. The films were grown with varying the methane (CH₄) concentration at the stage of bias-enhanced nucleation (BEN) and nano-diamond film deposition. It was found that nano-diamond nuclei were formed at a relatively high methane concentration, causing a secondary nucleation at the accompanying growth step. Nano-diamond film deposition on pure titanium was always very hard due to the high diffusion coefficient of carbon in Ti, the big difference between thermal expansion coefficients of diamond and Ti, the complex nature of the interlayer created during diamond deposition, and the difficulty in achieving very high nucleation density. A smooth and well-adhered nano-diamond film was successfully obtained on pure Ti substrate. Detailed experimental results on the synthesis, characterization and successful deposition of the nano-diamond film on pure Ti are discussed.     

CVD nanocrystalline diamond coatings on Ti alloy: A synchrotron-assisted interfacial investigation

Diamond coating on Ti-6Al-4V alloy was carried out using microwave plasma enhanced CVD with a super high CH₄ concentration, and at a moderate deposition temperature close to 500 °C. The nucleation, growth, adhesion behaviors of the diamond coating and the interfacial structures were investigated using Raman, XRD, SEM/TEM, synchrotron radiation and indentation test. Nanocrystalline diamond coatings have been produced and the nucleation density, nucleation rate and adhesion strength of diamond coatings on Ti alloy substrate are significantly enhanced. An intermediate layer of TiC is formed between the diamond coating and the alloy substrate, while diamond coating debonding occurs both at the diamond-TiC interface and TiC-substrate interface. The simultaneous hydrogenation and carburization also cause complex micro-structural and microhardness changes on the alloy substrates. The low deposition temperature and extremely high methane concentration demonstrate beneficial to enhance coating adhesion strength and reduce substrate damage.     

Synthesis and characterization of nano-crystalline CVD diamond film on pure titanium using Ar/CH4/H2 gas mixture

Titanium and Ti alloys have poor tribological properties and deposition of a well adherent diamond coating is a promising way to solve this problem. But diamond film deposition on pure titanium and Ti alloys is always difficult due to the high diffusion coefficient of carbon in Ti, the large mismatch in their thermal expansion coefficients, the complex nature of the interlayer formed during diamond deposition, and the difficulty of achieving very high nucleation density. A nano-crystalline diamond (NCD) film can resolve Ti and Ti alloys weak tribological performance due to its smooth surface. A well-adhered NCD film was successfully deposited on pure Ti substrate by using a microwave plasma assisted chemical vapor deposition (MWPCVD) system in the environment of Ar, CH₄ and H₂ gases at a moderate temperature. Detailed experimental results on the preparation, characterization and successful deposition of the NCD film on pure Ti are discussed.     

Effect of dilution gases in methane on the deposition of diamond-like carbon in a microwave discharge II: Effect of hydrogen

The effect of hydrogen as a dilution gas on the deposition of diamond-like carbon by the decomposition of methane in a microwave discharge was studied from surface analysis of the substrate and from plasma diagnostics. When carbon deposited from a CH₄-Ar plasma and consisting of large amounts of graphite and small amounts of diamond, was placed in the hydrogen plasma chemical sputtering of carbon to form hydrocarbons and adsorption of hydrogen on the carbon substrate were observed. The reaction occured only on graphite and not on diamond. The effects of hydrogen as a dilution gas on the deposition of diamond-like carbon from CH₄-H₂ plasma are to cause the formation of CH₃ radicals in the plasma, the removal of graphite from the deposit and the adsorption of atomic hydrogen on the deposit as an active participant in the diamond crystallization process.     

Improved flow conditions in diamond hot filament CVD—Promising deposition results and gas phase characterization by laser absorption spectroscopy

A hot filament plant for chemical vapor deposition of crystalline diamond featuring new operating stages has been built. It allows (i) a separate methane feed locally at substrate position and (ii) supplying a forced gas flow towards the substrate. To understand the effect of these two features on diamond growth, the results of systematic diamond growth experiments are discussed. To reveal the effects of these features on the gas phase, infrared tunable diode laser absorption spectroscopy (IR-TDLAS) was employed. Using a forced gas flow showed a remarkable increase in the diamond growth rate of a factor >6 compared to standard coating setups. By lowering the methane content in the forced flow diamond quality factors >95% were achieved. IR-TDLAS showed an increase of all measured carbon-containing species CH₄, C₂H₂, CH₃ and CO when applying the forced flow. The mass transport dominated by diffusion in the standard setup shifts to a convective gas transport in the forced flow setup. The induced laminar flow causes a more effective transport of the growth species to the substrate and leads to higher growth rates. Application of feeding methane locally at substrate position leads to exceptionally high growth rates (0.68 μm/h) at correspondingly high diamond quality (91%). For this, the methane content has to be lowered, though, which at the same time leads to a more homogenous deposition lateral on the surface. From the IR-TDLAS gas phase measurements, a more effective precursor dissociation, a higher CH₃ density and a rise in the CH₃?C₂H₂ ratio above the substrate surface can be derived.     

Laser chemical vapor deposition of TiC on tantalum

Laser chemical vapor deposition (LCVD) of titanium carbide (TiC) coatings onto tantalum substrates using hydrogen gas, titanium tetrachloride (TiCl₄) and either methane (CH₄) or acetylene (C₂H₂) source gasses was investigated. The influences of the molar ratio of the source gases and the deposition temperature on the phase assemblage, composition, and morphology of the coatings was examined. Using C₂H₂, nearly stoichiometric coatings were produced at 1000°C and at a TiCl₄/C₂H₂ ratio of 1/0.4. Stoichiometric coatings were also produced using CH₄ but the deposition temperature was 400°C higher and a much larger fraction of the carbon source was required compared to C₂H₂. Although deposition rates were much slower when using CH₄, the coatings exhibited a smoother surface finish and had a higher density compared to those produced using C₂H₂. The suitability of CH₄ and C₂H₂ as carbon sources for depositing stoichiometric, phase-pure coatings is discussed in light of these results.     

Nucleation behaviour of diamond particles on silicon substrates in a hot-filament chemical vapour deposition

Diamond films and particles have been deposited on a silicon substrate using a hot-filament chemical vapour deposition (CVD) method in order to study the effect of hydrogen on the behaviour of diamond nucleation. The nucleation density of diamond was affected by both hydrogen treatment prior to deposition and filament temperature,T _f. The nucleation density was decreased markedly with increasing hydrogen-treatment time. The nucleation density also changed with increasingT _f, which increased initially and then reached a maximum at 2100°C and decreased thereafter. Etching of the substrate surface was observed and enhanced with both increasing hydrogen-treatment time and increasingT _f. The changes in nucleation behaviour were related closely to the etching of substrate surface. These results are explained in terms of the etching of nucleation sites.     

Adherent diamond coating on copper using an interlayer

With a titanium interlayer, adherent diamond coating on copper is obtained. The diamond nucleation density is enhanced significantly by scratching the substrate with diamond powder and is influenced by the deposition conditions. It is found that the diamond growth rate increases with microwave power, gas pressure and methane concentration. However, a higher methane concentration results in increased growth defects and non-diamond phases. Under typical deposition conditions, the diamond crystals exhibit a (111) face dominating. The coating adhesion is accessed by pull-off tests and scratch tests. The former indicates that the coating adhesion is better than the strength of the adhesive, at ca 13 MPa. The latter shows a critical load about 8 N.     

Nanocrystalline diamond growth on different substrates

Nanocomposite films consisting of diamond nanoparticles of 3-5 nm diameter embedded in an amorphous carbon matrix have been deposited by means of microwave plasma chemical vapour deposition (MWCVD) from CH₄/N₂ gas mixtures. Si wafers, Si coated with TiN, polycrystalline diamond (PCD) and cubic boron nitride films, and Ti-6Al-4V alloy have been used as substrates. Some of the substrates have been pretreated ultrasonically with diamond powder in order to enhance the nucleation density n_nuc. It turned out that n_nuc depends critically on the chemical nature of the substrate, its smoothness and the pretreatment applied. No differences to the nucleation behaviour of CVD PCD films were observed. On the other hand, the growth process seems to be not affected by the substrate material. The crystallinity (studied by X-ray diffraction) and the bonding environment (investigated by Raman spectroscopy) show no significant differences for the various substrates. The mechanical and tribological properties, finally, reflect again the influence of the substrate material: on TiN, a lower hardness was measured as compared to Si, PCD and c-BN, whereas the adhesion of c-BN/nanocrystalline diamond (NCD) system was determined by that of the c-BN film on the underlying Si substrate.     

Deposition and microstructure of Ti-containing diamond-like carbon nanocomposite films

Ti-containing diamond-like carbon (DLC) films were deposited by plasma decomposition of CH₄/Ar gas mixtures with an introduction of tetrakis(dimethylamino)titanium (TDMAT, Ti[(CH₃)₂N]₄), which was used as a precursor of titanium. The films deposited were found to be nanocomposite coatings consisting of TiN nanocrystalline clusters and amorphous hydrocarbon (a-C:H), indicating that the nanocrystalline clusters were embedded in the DLC matrix. The crystallinity of TiN clusters, as well as the Ti atomic concentrations in the films, increased with an increase of substrate temperature. The substrate temperature applied to form a crystalline phase in the DLC matrix induced a graphitization of amorphous hydrocarbon matrix. The increase of volume fraction of TiN nanocrystalline clusters in the DLC matrix enhanced the mechanical properties of nanostructured coatings, although the graphite-like structural transition of DLC matrix happened due to the applied heating.     

Effects of enhanced nucleation on the growth and thermal performance of diamond films deposited on BeO by hot filament CVD technique

A method of controlling the feeding concentration of methane was applied in a hot-filament chemical vapor deposition (HFCVD) in order to improve the nucleation of diamond on the beryllium oxide substrates. The nucleation density and the morphologies of diamond were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM) while the thermal conductivities of substrates and the composites were detected by laser-diathermometer. The results show that the diamond thin film is in larger grain size with lower roughness when CH₄ and H₂ enter the chamber, respectively, rather than as a mixture, and the composites’ conductivity soared by 21%–31% compared with BeO substrates. At the conditions of separated gas entry, several projects with changes of the CH₄ flux during depositing were designed to discuss the influence of CH₄ concentration on diamond nucleation. The uniform and compact diamond thin films were acquired when the ratio of CH₄:H₂ at nucleation stage was in the range of 4%–8%.     

Characteristics of a well-adherent nanocrystalline diamond thin film grown on titanium in Ar/CH4 microwave CVD plasma

The fabrication of a well-adherent diamond film on titanium and its alloys is always problematical due to the different thermal expansion coefficients of the two materials, the complex nature of the interlayer formed during diamond deposition, and the difficulty in achieving very high nucleation density. In this work, well-adherent and smooth nanocrystalline diamond (NCD) thin film is successfully deposited on pure titanium substrate by microwave plasma-assisted chemical vapor deposition (MWPCVD) method in Ar/CH₄ environment. It is found that the average grain size is less than 20 nm with a surface roughness value as low as 12 nm. Morphology, surface roughness, diamond crystal orientation and quality are obtained by characterizing the sample with field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD) and Raman spectroscopy, respectively. Detailed experimental results and mechanisms for NCD film deposition are discussed.     

微波等离子体化学气相沉积法在硅片上同时生长碳化硅和金刚石

研究了衬底温度、核化密度、衬底表而预处理等工艺参数对微波等离子体化学气相沉积法在硅片上同时生长碳化硅和金刚石的影响.采用扫描电镜、X-射线衍射、喇曼光谱和红外光谱对样品进行了表征.结果表明:从高核化密度生长的金刚石膜中探测不到碳化硅;不论对硅衬底进行抛光预处理还是未抛光预处理,从低核化密度牛长的金刚石厚膜中总能探测到碳化硅.碳化硅生长在硅衬底上未被金刚石覆盖的地方,或者是在金刚石晶核之间的空洞处.碳化硅形成和金刚石生长是同时发生的两个竞争过程.此研究结果为制备金刚石和碳化砟复合材料提供了一种新的方法.     

Diamond deposition on copper: studies on nucleation, growth, and adhesion behaviours

This paper presents a systematic study on diamond growth on copper by microwave plasma chemical vapour deposition (MPCVD). It includes the following four main parts. 1. Effect of substrate pre-treatment on diamond nucleation. 2. Effect of deposition conditions on diamond nucleation and growth. 3.Preparation of free-standing diamond films using copper substrate. 4. Adherent diamond coating on copper using an interlayer. In the first part we show that diamond nucleation on copper is strongly affected by the substrate pre-treatment. The residues of abrasives left in the surface of the copper substrate play an important role in the diamond nucleation. In the second part we show that the diamond growth rate increases with microwave power and gas pressure. The effect of the microwave power is mainly an effect of substrate temperature. Increasing methane concentration results in a higher nucleation density and higher growth rate, but at the cost of a lower film quality. Gas flow rate has little influence on the diamond nucleation density and growth rate. In the third part we demonstrate the possibility of preparing large area free-standing diamond films using copper substrate, which has nearly no carbon affinity and usually leads to weak adhesion of the diamond films. The normally observed film cracking phenomenon is discussed and a two-step growth method is proposed for stress release. In the fourth part we show that adherent diamond coating on copper can be obtained using a titanium interlayer. Residual stress in the films is evaluated by Raman spectroscopy. It is found that with increase in the film thickness, the diamond Raman line shifts from higher wave numbers to lower, approaching 1332 cm–1. The stress variation along the depth of the film is also analysed using Airy stress theory.     

Diamond chemical vapour deposition on seeded cemented tungsten carbide substrates

Diamond particles were deposited onto seeded cemented tungsten carbide (WC-Co) substrates using conventional hot-filament chemical vapour deposition (HFCVD) and time-modulated CVD (TMCVD) processes. The substrates were pre-seeded ultrasonically with diamond particles of different grit sizes. In this investigation, we employ timed methane (CH₄) gas modulations, which are an integral part of our TMCVD process in order to enhance diamond nucleation density. During diamond deposition using the conventional HFCVD process, methane gas flow was maintained constant. The total hydrogen flow into the reactor during TMCVD process was higher than in the HFCVD process. Hydrogen etching can be expectedly more prominent in the TMCVD process than in HFCVD of diamond particles. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) results showed that a proper selection of the diamond grit size for seeding using ultrasounds can lead to enhancement in the nucleation density values of about two orders of magnitude (10⁷ to 10⁹ cm^− 2). The TMCVD process using the different seeded substrates can result in high nucleation density values of up to 10¹⁰ cm^− 2.     

Correlation between diamond grain size and hydrogen incorporation in nanocrystalline diamond thin films

Hydrogen-incorporated nanocrystalline diamond thin films have been deposited in microwave plasma enhanced chemical vapour deposition (CVD) system with various hydrogen concentrations in the Ar/CH₄ gas mixture. The bonding environment of carbon atoms was detected by Raman spectroscopy and the hydrogen concentration was determined by elastic recoil detection analysis. Incorporation of H₂ species into Ar-rich plasma was observed to markedly alter the microstructure of diamond films. Raman spectroscopy results showed that part of the hydrogen is bonded to carbon atoms. Raman spectra also indicated the increase of non-diamond phase with the decrease in crystallite size. The study addresses the effects of hydrogen trapping in the samples when hydrogen concentration in the plasma increased during diamond growth and its relation with defective grain boundary region.     

Nucleation control of diamond synthesized by microwave plasma CVD on cemented carbide substrate

Diamond was coated on to cemented carbide substrate by microwave plasma CVD, in which nucleation control of diamond crystals was investigated under constant deposition conditions; total pressure 30 torr, CH₄ flow rate 1 ml min^–1, H₂ flow rate 199 ml min^–1 and microwave power 550 W. Nucleation tends to occur selectively on the edge part of WC grains of the cemented carbide substrate with coarse WC grain size of about 1 m, where the nucleation density was 9×10⁶ cm^–2. The density increased to about 5×10⁷ cm^–2 when using a finegrained substrate (WC grain size 0.5 m). A considerably enhanced nucleation was observed by introducing a number of fine microflaws on to the substrate surface. Microflawing treatment with diamond fine powder (grain size 0–1/4 m) suspended in an ultrasonic cleaner bath was effective for increasing the diamond nucleation density up to 5×10⁸ cm^–2. The grain size of grown diamond crystals decreased with increasing microflawing time.     

Effect of the Surface Modification of Synthetic Diamond with Nickel or Tungsten on the Properties of Copper–Diamond Composites

Tungsten- and nickel-containing coatings have been produced on the surface of synthetic diamond crystals by rotary chemical vapor deposition (RCVD) using tungsten hexacarbonyl, W(CO)₆, and nickelocene, Ni(C₅H₅)₂, as gaseous precursors. The thickness, composition, and morphology of the coatings have been shown to depend on the RCVD process duration and reactant concentrations in the vapor phase. The synthetic diamond microcrystals with tungsten- and nickel-containing coatings have been used to produce copper–diamond heat-conducting composites. Powder mixtures containing 50 vol % diamond with a particle size of 50, 100, or 200 μm have been consolidated by spark plasma sintering or hot pressing. It has been shown that the highest relative density (97%) and thermal conductivity (340 W/(m K)) are offered by the composites produced by spark plasma sintering using tungsten carbide-coated 50-μm diamond crystals.