Effects of low-energy ion beam glancing angle nitridation on nGaAs surface and Co-nGaAs Schottky contact properties

In this research, effects of low-energy nitrogen and argon ion beam irradiation at a glancing angle on chemical composition and morphology of the GaAs surface as well as electrical properties of Co-nGaAs Schottky contact are studied. Substantial reduction of the effective barrier height was observed. This reduction was explained by formation of the irradiation-induced thin n⁺ layer. This revealed that low effective barrier height and low noise Co-nGaAs Schottky contacts can be fabricated on GaAs by low-energy nitrogen ion beam irradiation of surface. On the other hand, GaAs surface irradiation by low-energy noble gas (argon) ion beam resulted in substantial increase of the low-frequency noise at liquid nitrogen temperature. Formation of a thin GaN layer as a result of the GaAs surface irradiation by low-energy nitrogen ion beam was observed by XPS. Experimentally registered decrease of the low-frequency noise (in the case of nitrogen irradiation) was explained in terms of the screening of irradiation-induced defects, passivation of dangling bonds at the GaAs surface nGaAs and increased surface and Schottky contact homogeneity due to the ion beam nitridation.     

Nanostructuring of InP surface by low-energy ion beam irradiation

The InP nanodots of size 55 to 100 nm and height 25 to 30 nm have been synthesized by low-energy Ar+-ion irradiation with different ion energies. Sizes and size distributions of the dots strongly depend on growth conditions. Rapid thermal annealed (RTA) of the patterned surface shows cluster formation for annealing temperature 400 degrees C and above. Raman investigations reveal optical phonon softening due to correlation length shortening and broadening of the optical modes from the patterned surface. The softening is due to confinement of phonons in embedded nanocrystallites within the patterned surface along with surface nanodots, and broadening is attributed to their size distributions, which increases with increase in ion energy. The lattice damage recovery is observed from the patterned surface subjected to RTA, which exhibits upward shift of the LO and TO phonons due to the presence of complex interfacial stress, associated with the removal of crystal defects with RTA.     

Damage buildup in semiconductors bombarded by low-energy ions

The damage buildup in Ge and GaAs bombarded at room and elevated temperatures by keV Ne⁺ and Ar⁺ ions has been studied. Results show that the accumulation of disorder can be considered as a planar growth of an amorphous layer proceeding from the surface. A retardation of amorphous layer growth is experimentally observed in Ge for low ion doses. Results (for the case of room temperature irradiation of GaAs and for all the cases of irradiation of Ge except for the case of irradiation by Ar⁺ ions with high ion flux density) are explained based on the diffusion of mobile point defects to the surface with a subsequent interface segregation process. Calculations based on this model are in good agreement with experimental data.     

Formation of atomically flat β-FeSi2/Si(100) interface using ion irradiated substrate

Thin uniform β-FeSi₂ films were fabricated on ion irradiated Si(100) substrates to achieve an atomically flat interface. Ion irradiation produces a surface with more defects than chemical etching; however, it is expected that the presence of defects can promote the formation of compound films such as β-FeSi₂ that require interdiffusion and reaction processes. However, excess defects can also result in random nucleation, poor crystallinity and a rough interface. Cross-sectional transmission electron microscopy was used to determine the optimum conditions for ion irradiation of the substrate to obtain a clear β-FeSi₂/Si interface.     

Surface features of Zr-based and Ti-based metallic glasses by ion irradiation

Due to a lack of crystalline structures and grain boundaries, metallic glasses exhibit extremely high strength and superior resistance to corrosion. They are also supposed to be resistant against displacive irradiation due to their inherent disordered structure, thereby are potential candidates for applications in irradiation environments. In this work, the irradiation effects of Zr- and Ti- based bulk metallic glasses (BMGs) under heavy ions irradiation were investigated. The results showed that the Zr-based BMG is more resistant to the Cl ion irradiation with no structural transition and distinct damage subjected to high irradiation fluence. In contrast, the Ti-based BMG exhibits unique damage morphology with respect to the Zr-based BMG and other reported metallic glasses material. Two kinds of damage pits in micrometer scale form on the irradiated surface, and distinct viscous flow takes place. The formation mechanism of the unique irradiation damage feature is discussed.     

Influence of ion radiation damage on surface reactivity

The role of ion irradiation on the reactivity of surfaces is reviewed with special attention to those experiments that make use of ultrahigh vacuum surface techniques. Ion irradiation effects on adsorption, incorporation and catalysis are discussed. The difficulties involved in directly probing surface defects are documented and a discussion of several techniques offering good prospects in this defect characterization is presented. Comparisons are made with related areas such as stepped sufaces and dislocation effects on reactivity but a review of the latter subjects is not attempted. Some examples of theoretical efforts in relation to the role of surface defects in gas-surface interactions are also included.     

强流脉冲离子束轰击对钛合金表面的损伤研究

为了研究强流脉冲离子束(IPIB)辐照在钛合金表面造成的损伤效应,利用IPIB在低、中、高三种能流密度下对钛合金表面进行了轰击。通过金相显微镜和扫描电子显微镜对离子束诱发的表面形貌进行了分析。结果表明,当能量密度为1.44 J/cm2时,5次脉冲轰击,靶材表面开始形成大量的熔坑。能量密度为4.5 J/cm2,10次脉冲辐照,表面出现大量较深的微裂纹,其形态分布与材料本身的缺陷密切相关。IPIB轰击能够诱发表层强烈的塑性变形;多次脉冲轰击,变形区域表面形成分布均匀,尺寸约为1μm的微孔洞形貌。微孔洞成分的线扫描结果显示,孔洞内部C,O和Si等杂质轻元素含量发生改变,β相稳定元素Mo含量基本保持不变。     

Swift heavy ion induced modifications in structural,optical & magnetic properties of pure and V doped ZnO films

The effect of swift heavy ion irradiation on structural, optical and magnetic properties of pure ZnO, Zn_0.95V_0.05O and Zn_0.90V_0.10O films prepared by RF sputtering are studied. X-ray diffraction (XRD) analysis reveals no significant change in the ZnO crystal structure except a small change in intensity and peak broadening on irradiation. Raman spectra reveal the degradation of crystalline quality upon ion irradiation. Atomic force microscopy (AFM) study shows the formation of smaller sized nanostructures on ion irradiation. Photoluminescence (PL) spectra of ZnO films reveal the increase of defects such as oxygen vacancy in the films upon ion irradiation. The irradiated V doped ZnO films exhibit room temperature ferromagnetic behaviour. An increase in oxygen vacancy on ion irradiation together with V ion concentration favours enhanced ferromagnetic behaviour in irradiated V doped ZnO films.     

Radiation damage induced by krypton ions in sintered alpha-Al2O3

Alpha-alumina is a useful thermoluminescence (TL) dosemeter. The knowledge of its behaviour under irradiation is thus of primary importance. The purpose of this paper is to characterise the radiation damage produced by swift krypton ions using various experimental methods, namely TL, optical absorption, fluorescence and electron paramagnetic resonance (EPR). After ion irradiation, the TL intensity is shown to decrease, whereas the optical absorption rises in the whole studied wavelength range. These two phenomena seem to be related to one another. Furthermore, optical absorption measurements highlight the appearance of new absorption bands probably owing to oxygen vacancies. Induced defects are also observed in the EPR spectra of irradiated pellets. They are likely related to electronic holes trapped on oxygen ions. The concentration of these defects increases with ion fluence and fluorescence measurements indicate that some pre-existing defects such as F2(2+) centres follow the same trend up to approximately 4.1 x 10(13) ions cm(-2).     

PTCDA molecules on an InSb(001) surface studied with atomic force microscopy

PTCDA (3,4,9,10-perylene-tetracarboxylic-dianhydride) molecular structures assembled on an InSb(001) c(8 × 2) reconstructed surface have been studied using frequency modulated atomic force microscopy. The high-resolution imaging of the structures is possible through repulsive interactions, using the constant height scanning mode. During initial stages of growth the [110] diffusion channel dominates as indicated by formation of long PTCDA molecular chains parallel to the [110] crystallographic direction on the InSb surface. For a single monolayer coverage a wetting layer of PTCDA is formed. Finally it is shown that the PTCDA/InSb is a promising system for building molecular nanostructures by manipulation of single molecules with the AFM tip.     

He+ 辐照对CLAM钢焊缝微观组织和性能的影响

在室温下用强度为70 keV的He⁺辐照CLAM钢焊缝,使用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和连续刚度纳米压痕技术(CSM)对其表征,研究了He⁺辐照对CLAM钢焊缝的微观组织和性能的影响。结果表明,随辐照剂量的增大焊缝表面黑色孔洞的尺寸增大、密度提高;辐照剂量为1×10¹⁷ ions·cm^-2时,在两种焊缝中形成的位错环的尺寸分别约为18.97 nm、15.73 nm,数密度分别约为2.24×10²¹ m^-3、1.78×10²¹ m^-3,氦泡引起的辐照肿胀率分别约为1.7%和0.4%;辐照缺陷(位错环、氦泡)导致的辐照硬化率分别为49.0%和29.9%。与焊态焊缝相比,调质处理态焊缝的辐照损伤较弱,在一定程度上表明经调质处理后焊缝的抗辐照性能有所提高。     

Characterisation of vacancy-like defects in III–V compound semiconductors using positron annihilation technique

Single crystals of GaP and InSb were irradiated by 3 MeV electrons at 20 K to a total dose of 4 × 10¹⁸ e ⁻/cm². Isochronal annealing in the temperature region 77–650 K followed the irradiation. In GaP, the positron lifetime measurement indicated the presence of irradiation-induced vacancies in the Ga-sublattice. The vacancies disappeared at two stages observed in temperature ranges 200–300 and 450–550 K. In InSb the positron lifetime was found to increase by 8 ps compared to that in as-grown crystals (i.e. 282±2 ps) after irradiation. The increase indicated the presence of irradiation-induced defects; the crystal was found to recover until 350 K with a sharp annealing stage at 250–350 K.     

Effect of ion irradiation in an Al90Fe2Ce8 metallic glass

Here the irradiation effect of an AlFeCe metallic glass under nitrogen ions was investigated. Ion irradiation induced crystallization can be observed in the studied metallic glass. The surface morphologies have been also examined by atomic force microscopy prior to and after ion irradiation. It is found that the surfaces have been smoothened after ion irradiation. The nanohardness and Young’s modulus of metallic glass increase after ion irradiation, which can be attributed to the formation of crystalline phases. The results obtained here clearly suggest that ion irradiation can be a useful method to tailor the microstructure and mechanical properties of metallic glasses.     

Titanium surface layers after irradiation with swift Kr and Xe ions

This paper presents the test results of the swift krypton (240 MeV) and xenon ion (130 MeV) irradiation influence on the titanium surface layer properties. These ions change the titanium surface topography in different ways. The irradiation contributes to the creation of a new phase in the surface layer. Radiation damage effects on the friction coefficient, wear, and microhardness of titanium after krypton and xenon ion irradiation were studied. Krypton irradiation does not influence the microhardness of the titanium. After xenon irradiation with a fluence of 1 × 10¹⁸ ion/m² the microhardness increases by 13%; further increases of the fluence gradually reduce the microhardness of the surface layer. Swift Kr and Xe ion irradiation does not influence the friction coefficient of the titanium surface.     

Etch damage characteristics of TiO2 thin films by capacitively coupled RF Ar plasmas

Etch damage of TiO₂ thin films with the anatase phase by capacitively coupled RF Ar plasmas has been investigated. The plasma etching causes a mixed phase of anatase and rutile or the rutile phase. The effect of Ar plasma etching damage on degenerating TiO₂ thin films is dependent on gas pressure and etching time. The physical etching effect at a low gas pressure (1.3 Pa) contributes to the degradation: the atomic O concentration at the thin film surface is strongly increased. At a high gas pressure (13-27 Pa) and long etching time (60 min), there are a variety of surface defects or pits, which seem to be similar to those for GaN resulting from synergy effect between particle and UV radiation from the plasmas. For the hydrophilicity, the thin film etched at the high gas pressure and a short etching time (5 min) seems to have no etch damage: its contact angle property is almost similar to that for the as-grown thin film, and is independent of the black light irradiation. This result would probably result from formation of donor-like surface defects such as oxygen vacancy.     

Solubility limits of manganese in InSb under equilibrium and nonequilibrium synthesis conditions

We demonstrate that, in the case of InSb〈Mn〉 synthesis through quenching from the liquid state, a second phase in InSb precipitates at higher manganese concentrations than in the case of Czochralski growth. The observed concentration delay of second-phase precipitation can be accounted for in terms of both the complex, multistep formation of Lomer–Cottrell sessile dislocations, accompanying the crystallization of III–V compound semiconductors, and diffusion hindrances to dopant motion to dislocations, associated with the high quenching rate and the presence of other lattice defects.     

Multiscale analysis of the laser-induced damage threshold in optical coatings

We have investigated the influence of laser beam size on laser-induced damage threshold (LIDT) in the case of single- and multiple-shot irradiation. The study was performed on hafnia thin films deposited with various technologies (evaporation, sputtering, with or without ion assistance). LIDT measurements were carried out at 1064 nm and 12 ns with a spot size ranging from a few tens to a few hundreds of micrometers, in 1-on-1 and R-on-1 modes. These measurements were compared with simulations obtained with the statistical theory of laser-induced damage caused by initiating inclusions. We show how to obtain information on the initiating defect properties and the related physical damage mechanisms with a multiscale study. Under certain conditions, it is possible with this method to discriminate different defects, estimate their densities, and follow the evolution of the defects under multiple irradiation. The different metrology implications of our approach, particularly for obtaining a functional LIDT of optical components are discussed.     

Thermal and photo-induced surface damage in paratellurite

Long-term operation of TeO2 acousto-optical device is limited by the formation of surface damage caused by the He–Cd laser irradiation. Similar surface damage occurs during the heat treatment of the TeO2 crystal at 350°C. In this study, TeO2 specimens after various surface treatments have been observed by electron microscopy and X-ray photoelectron spectroscopy. The variation of the transmittance for mechanically polished specimens has been measured in situ during heat treatments. It was found that the thermal surface damage at 350°C was formed in the surface layer damaged by mechanical polishing. The mechanically damaged layer was amorphous and deficient in oxygen in the as-polished state. The electron microscopic observation revealed that the surface damage layer induced by heat treatments or by the ultraviolet light irradiation contained tellurium particles (20–40 nm) in diameter dispersed in the TeO2 matrix. On annealing the TeO2 specimen at 500°C in air, however, the particles disappeared because of the melting, evaporation and oxidation of tellurium which restores the transmittance of the crystal. Based on the results, combined with the observation of surface damage induced by the visible light irradiation, a possible mechanism of the surface damage formation has been briefly discussed. This revised version was published online in November 2006 with corrections to the Cover Date.     

Ion beam modifications of defect sub-structure of calcite cleavages

Experimental investigations on the defect sub-structure and surface modifications, brought about by He⁺ ion-bombardment of calcite cleavages (100), have been carried out. Optical and scanning electron microscopic investigations revealed drastic modifications on the surface morphology, local symmetry and defect concentration. Additional structural defects on ion-bombardment of calcite surfaces also have been observed. Changes in shape and form of chemical etch pits are found to be a function of ion-beam energy, as studied by optical microscopy. Radiation damage in calcite has been attributed mainly due to desorption of CO₃⁻² ions from the calcite surfaces, on irradiation. Measurements of surface conductivity on irradiated calcite surfaces have been made employing a four-probe technique. Enhancement of surface conductivity has been considered to be due to an increase in concentration of CO₃⁻² ions formed, on ion irradiation and subsequent thermal stimulation. Planar plastic anisotropy has been studied on irradiated calcite cleavages by measurement of microhardness.