A servo-controlled capacitive pressure sensor using a capped-cylinder structure microfabricated by a three-mask process

A silicon-micromachined servo-controlled capacitive pressure sensor is described. The use of a capped-cylinder shape with pick-off electrodes external to a sealed cavity permits this device to be fabricated in only three masking steps. Device behavior is evaluated experimentally and by finite element analysis. A fabricated device with 2 mm diameter, 9.7 /spl mu/m structural thickness and 10 /spl mu/m cavity height provides a measured sensitivity of 0.516 V/kPa over a dynamic range of 20-100 kPa gauge pressure, with a nonlinearity of <3.22% of full scale. The open-loop sensitivity of this device averaged over a dynamic range of 0-250 kPa is -408 ppm/kPa. A voltage bias applied to the servo-electrode can be used to tune both the open-loop and servo-controlled sensitivity by more than 30%. An alternative design in which the Si electrode is segmented to relieve residual stress provides 10-20% more open-loop sensitivity with similar structural dimensions. Fabricated devices are sealed within a metal package filled with an inert dielectric liquid. This enhanced open-loop sensitivity by a factor of about 1.7, and in servo-controlled operation, reduced restoring voltage by a similar factor. Measurements and analysis of temperature responses of these devices are presented.     

An in-plane high-sensitivity, low-noise micro-g silicon accelerometer with CMOS readout circuitry

A high-sensitivity, low-noise in-plane (lateral) capacitive silicon microaccelerometer utilizing a combined surface and bulk micromachining technology is reported. The accelerometer utilizes a 0.5-mm-thick, 2.4/spl times/1.0 mm/sup 2/ proof-mass and high aspect-ratio vertical polysilicon sensing electrodes fabricated using a trench refill process. The electrodes are separated from the proof-mass by a 1.1-/spl mu/m sensing gap formed using a sacrificial oxide layer. The measured device sensitivity is 5.6 pF/g. A CMOS readout circuit utilizing a switched-capacitor front-end /spl Sigma/-/spl Delta/ modulator operating at 1 MHz with chopper stabilization and correlated double sampling technique, can resolve a capacitance of 10 aF over a dynamic range of 120 dB in a 1 Hz BW. The measured input referred noise floor of the accelerometer-CMOS interface circuit is 1.6/spl mu/g//spl radic/Hz in atmosphere.     

A high-sensitivity silicon accelerometer with a folded-electrode structure

A high-sensitivity capacitive silicon accelerometer with a new device structure is presented in this paper. The structure uses a fixed rigid electrode suspended between a proof mass and a stiff moving electrode to provide differential capacitance measurement and force rebalancing. High sensitivity is achieved by forming a thick silicon proof mass and a narrow uniform air gap over a large area. The mechanical noise floor is reduced by incorporating damping holes in the electrodes. The accelerometer structure is all silicon and is fabricated on a single silicon wafer. The measured sensitivity for a device with 2.6 mm /spl times/ 1 mm proof mass and 1.4 /spl mu/m air gap is /spl ap/11 pF/g per electrode. The calculated mechanical noise floor for the same device is 0.18 /spl mu/g//spl radic/Hz at atmosphere.     

A hybrid PZT-silicon microvalve

A low-voltage, low-power microvalve for compact battery-powered portable microfluidic platforms is designed, fabricated and experimentally characterized. The microvalve employs laser-machined piezoelectric unimorphs mechanically linked to surface micromachined nickel structures anchored on corrugated Si/sub x/N/sub y/-Parylene composite membrane tethers. The Parylene layer also serves as a compliant sealing layer on the valve seat for reducing the leakage in the off state. A mechanical linking process to connect the bulk piezoelectric unimorphs to micromachined diaphragms in a self-aligned manner has been developed. The design enables large strokes (2.45 /spl mu/m) at low-actuation voltages (10 V) consuming a comparatively low switching energy (678 nJ). The dependence of the measured flow rates on the modulated clearance over the orifice was found to be in good agreement with the theory of laminar flow in the low (1-100) Reynolds number regime. The microvalve was experimentally characterized for both gas and liquid flows. For example, at 10 V unimorph actuation, a gas flow rate of 420 /spl mu/L/min at a differential pressure of 9.66 kPa was measured. The off-state leakage rate for 0 V actuation is estimated to be 10-20 /spl mu/L/min. Typical flow rates with pulse width modulated (PWM) actuation with 50% duty cycle at 20 V/sub pp/ (1 kHz) were measured to be 770 /spl mu/L/min at 6.9 kPa for gases and 2.77 /spl mu/L/min at 4.71 kPa for liquids.     

A microfabricated wall shear-stress sensor with capacitative sensing

A silicon-based micromachined, floating-element sensor for low-magnitude wall shear-stress measurement has been developed. Sensors over a range of element sizes and sensitivities have been fabricated by thin-wafer bonding and deep-reactive ion-etching techniques. Detailed design, fabrication, and testing issues are described in this paper. Detection of the floating-element motion is accomplished using either direct or differential capacitance measurement. The design objective is to measure the shear-stress distribution at levels of O(0.10 Pa) with a spatial resolution of approximately O(100 /spl mu/m). It is assumed that the flow direction is known, permitting one to align the sensor appropriately so that a single component shear measurement is a good estimate of the prevalent shear. Using a differential capacitance detection scheme these goals have been achieved. We tested the sensor at shear levels ranging from 0 to 0.20 Pa and found that the lowest detectable shear-stress level that the sensor can measure is 0.04 Pa with an 8% uncertainty on a 200 /spl mu/m/spl times/500 /spl mu/m floating element plate.     

Capacitive flexible pressure sensor: microfabrication process and experimental characterization

Kapton-based flexible pressure sensor arrays are fabricated using a new technology of film transfer. The sensors are dedicated to the non-invasive measurement of pressure/force in robotic, sport and medical applications. The sensors are of a capacitive type, and composed of two millimetric copper electrodes, separated by a polydimethylsiloxane (PDMS) deformable dielectric layer. On the flexible arrays, a very small curvature radius is possible without any damage to the sensors. The realized sensors are characterized in terms of fabrication quality. The inhomogeneity of the load free capacitances obtained in the same array is ±7 %. The fabrication process, which requires 14 fabrication steps, is accurate and reproducible: a 100 % transfer yield was obtained for the fabrication of 5 wafers gathering 4 sensor arrays each (215 elementary sensors). In the preliminary electro-mechanical characterization, a sensor (with a PDMS dielectric layer of 660 μm thickness and a free load capacitance of 480 fF) undergoes a capacitance change of 17 % under a 300 kPa normal stress.     

Fabrication and measured performance of a first-generation microthermoelectric cooler

The measured performance of a column-type microthermoelectric cooler, fabricated using vapor-deposited thermoelectric films and patterned using photolithography processes, is reported. The columns, made of p-type Sb/sub 2/Te/sub 3/ and n-type Bi/sub 2/Te/sub 3/ with an average thickness of 4.5 /spl mu/m, are connected using Cr/Au/Ti/Pt layers at the hot junctions, and Cr/Au layers at the cold junctions. The measured Seebeck coefficient and electrical resistivity of the thermoelectric films, which were deposited with a substrate temperature of 130/spl deg/C, are -74 /spl mu/V/K and 3.6/spl times/10/sup -5/ /spl Omega/-m (n-type, power factor of 0.15 mW/K/sup 2/-m), and 97 /spl mu/V/K and 3.1/spl times/10/sup -5/ /spl Omega/-m (p-type, power factor of 0.30 mW/K/sup 2/-m). The cooling performance of devices with 60 thermoelectric pairs and a column width of 40 /spl mu/m is evaluated under a minimal cooling load (thermobuoyant surface convection and surface radiation). The average cooling achieved is about 1 K. Fabrication challenges include the reduction of the column width, implementation of higher substrate temperatures for optimum thermoelectric properties, and improvements of the top connector patterning and deposition.     

Polymer-based cantilevers with integrated electrodes

An innovative release method of polymer cantilevers with embedded integrated metal electrodes is presented. The fabrication is based on the lithographic patterning of the electrode layout on a wafer surface, covered by two layers of SU-8 polymer: a 10-/spl mu/m-thick photo-structured layer for the cantilever, and a 200-/spl mu/m-thick layer for the chip body. The releasing method is based on dry etching of a 2-/spl mu/m-thick sacrificial polysilicon layer. Devices with complex electrode layout embedded in free-standing 500-/spl mu/m-long and 100-/spl mu/m-wide SU-8 cantilever were fabricated and tested. We have optimized major fabrication steps such as the optimization of the SU-8 chip geometry for reduced residual stress and for enhanced underetching, and by defining multiple metal layers [titanium (Ti), aluminum (Al), bismuth (Bi)] for improved adhesion between metallic electrodes and polymer. The process was validated for a miniature 2/spl times/2 /spl mu/m/sup 2/ Hall-sensor integrated at the apex of a polymer microcantilever for scanning magnetic field sensing. The cantilever has a spring constant of /spl cong/1 N/m and a resonance frequency of /spl cong/17 kHz. Galvanometric characterization of the Hall sensor showed an input/output resistance of 200/spl Omega/, a device sensitivity of 0.05 V/AT and a minimum detectable magnetic flux density of 9 /spl mu/T/Hz/sup 1/2/ at frequencies above 1 kHz at room temperature. Quantitative magnetic field measurements of a microcoil were performed. The generic method allows for a stable integration of electrodes into polymers MEMS and it can readily be used for other types of microsensors where conducting metal electrodes are integrated in cantilevers for advanced scanning probe sensing applications.     

Design and fabrication of a micromachined planar patch-clamp substrate with integrated microfluidics for single-cell measurements

We have designed, fabricated, tested, and integrated microfabricated planar patch-clamp substrates and poly(dimethylsiloxane) (PDMS) microfluidic components. Substrates with cell-patch-site aperture diameters ranging from 300nm to 12 /spl mu/m were produced using standard MEMS-fabrication techniques. The resistance of the cell-patch sites and substrate capacitance were measured using impedance spectroscopy. The resistance of the microfabricated apertures ranged from 200 k/spl Omega/ to 47 M/spl Omega/ for apertures ranging from 12 /spl mu/m to 750 nm, respectively. The substrate capacitance was 17.2 pF per mm/sup 2/ of fluid contact area for substrates with a 2-/spl mu/m-thick layer of silicon dioxide. In addition, the ability of the planar patch-clamp substrates to form high-resistance seals in excess of 1 G/spl Omega/ has been confirmed using Chinese hamster ovary cells (CHO-K1). Testing shows that the microfluidic components are appropriate for driving human embryonic kidney cells (HEK 293) to patch apertures, for trapping cells on patch apertures, and for exchanging the extracellular fluid environment.     

A monolithic three-axis micro-g micromachined silicon capacitive accelerometer

A monolithic three-axis micro-g resolution silicon capacitive accelerometer system utilizing a combined surface and bulk micromachining technology is demonstrated. The accelerometer system consists of three individual single-axis accelerometers fabricated in a single substrate using a common fabrication process. All three devices have 475-/spl mu/m-thick silicon proof-mass, large area polysilicon sense/drive electrodes, and small sensing gap (<1.5 /spl mu/m) formed by a2004 sacrificial oxide layer. The fabricated accelerometer is 7/spl times/9 mm/sup 2/ in size, has 100 Hz bandwidth, >/spl sim/5 pF/g measured sensitivity and calculated sub-/spl mu/g//spl radic/Hz mechanical noise floor for all three axes. The total measured noise floor of the hybrid accelerometer assembled with a CMOS interface circuit is 1.60 /spl mu/g//spl radic/Hz (>1.5 kHz) and 1.08 /spl mu/g//spl radic/Hz (>600 Hz) for in-plane and out-of-plane devices, respectively.     

Meter-scale large-area capacitive pressure sensors with fabric with stripe electrodes of conductive polymer-coated fibers

We developed meter-scale large-area capacitive fabric pressure sensors for floor sensors to monitor human position. In the fabric pressure sensor, two fabrics with stripe electrodes of conductive polymer-coated fibers woven into them were stacked vertically, and the capacitance changes between the top and bottom stripe electrodes were measured when pressure was applied. By using the die-coating of a conductive polymer and weaving the resultant fibers with meter-scale automatic looming machines, the 1 m × 1 m area with stripe electrodes at a 20 cm pitch was constructed. The pressure sensitivity, which depends on the number of the sensor fibers forming the stripe electrodes, was characterized and optimized to increase output capacitance change. The stripe electrodes with five sensor fibers were found to exhibit a capacitance change of 1.37 pF when pushed with the average foot pressure (i.e., 2.6 N/cm²), which is large enough to detect with conventional capacitance measurement circuits. Finally, pressure sensing with our woven pressure sensor fabric is demonstrated. Our meter-scale pressure sensor fabric technology will be used for bed and floor sensors for monitoring old people in nursing homes and hospitals.     

High-performance temperature-programmed microfabricated gas chromatography columns

This paper reports the first development of high-performance, silicon-glass micro-gas chromatography (/spl mu/GC) columns having integrated heaters and temperature sensors for temperature programming, and integrated pressure sensors for flow control. These 3-m long, 150-/spl mu/m wide and 250-/spl mu/m deep columns, integrated on a 3.3 cm square die, were fabricated using a silicon-on-glass dissolved wafer process. Demonstrating the contributions to heat dissipation from conduction, convection, and radiation with and without packaging, it is shown that using a 7.5-mm high atmospheric pressure package reduces power consumption to about 650 mW at 100/spl deg/C, while vacuum packaging reduces the steady-state power requirements to less than 100 mW. Under vacuum conditions, 600 mW is needed for a temperature-programming rate of 40/spl deg/C/min. The 2300 ppm//spl deg/C TCR of the temperature sensors and the 50 fF/kPa sensitivity of the pressure sensors satisfy the requirements needed to achieve reproducible separations in a /spl mu/GC system. Using these columns, highly resolved 20-component separations were obtained with analysis times that are a factor of two faster than isothermal responses.     

High precision intelligent flexible grasping front-end with CMOS interface for robots application用于智能机器人精细抓握的高灵敏度柔性抓握前端

This paper presents a high-precision intelligent flexible robot grasping front-end with an integrated capacitive tactile sensor array and a conditioning chip. The capacitive tactile sensor is the primary part of the front-end, it determines the overall performance. The micro-needle array sandwich structure in the tactile sensor increases the repeatability and stability, and ensures the sensitivity. The assembled sensor exhibits a saturation at 10.53 N (421 kPa) with a sensitivity of 1.9%/kPa. Furthermore, a conditioning chip is utilized in a custom readout interface to achieve better performance by reducing signal attenuation, and to increase the compatibility of the front-end. The chip is optimized for the parasitic shunt capacitance in the capacitor array. A dual bidirectional charge-discharge conversion method and a two-port detection method are matched to achieve the goal of reducing the shunting influence, and attenuating the offset voltage or the noise input effects. A prototype of the interface has been fabricated using 180-nm CMOS technology. Sensor with the value of 0.5 pF shunted by capacitors of 47 pF has been detected with an error of 1% within 100 μs.     

Uncooled multimirror broad-band infrared microbolometers

A new generation of microbolometers were designed, fabricated and tested for the NASA CERES (Clouds and the Earth's Radiant Energy System) instrument to measure the radiation flux at the Earth's surface and the radiant energy now within the atmosphere. These detectors are designed to measure the earth radiances in three spectral channels consisting of a short wave channel of 0.3 to 5 /spl mu/m, a wide-band channel of 0.3 to 100 /spl mu/m and a window channel from 8 to 12 /spl mu/m each housing a 1.5 mm x 1.5 mm microbolometers or alternatively 400 /spl mu/m x 400 mm microbolometers in a 1 /spl times/ 4 array of detectors in each of the three wavelength bands, thus yielding a total of 12 channels. The microbolometers were fabricated by radio frequency (RF) magnetron sputtering at ambient temperature, using polyimide sacrificial layers and standard micromachining techniques. A semiconducting YBaCuO thermometer was employed. A double micromirror structure with multiple resonance cavities was designed to achieve a relatively uniform absorption from 0.3 to 100 /spl mu/m wavelength. Surface micromachining techniques in conjunction with a polyimide sacrificial layer were utilized to create a gap underneath the detector and the Si/sub 3/N/sub 4/ bridge layer. The temperature coefficient of resistance was measured to be -2.8%/K. The voltage responsivities were over 10/sup 3/ V/W, detectivities above 10/sup 8/ cm Hz/sup 1/2//W, noise equivalent power less than 4 /spl times/ 10/sup -10/W/Hz/sup 1/2/ and thermal time constant less than 15 ms.     

Two-axis single-crystal silicon micromirror arrays

This work presents the design, fabrication, and testing of a two-axis 320 pixel micromirror array. The mirror platform is constructed entirely of single-crystal silicon (SCS) minimizing residual and thermal stresses. The 14-/spl mu/m-thick rectangular (750/spl times/800 /spl mu/m/sup 2/) silicon platform is coated with a 0.1-/spl mu/m-thick metallic (Au) reflector. The mirrors are actuated electrostatically with shaped parallel plate electrodes with 86 /spl mu/m gaps. Large area 320-mirror arrays with fabrication yields of 90% per array have been fabricated using a combination of bulk micromachining of SOI wafers, anodic bonding, deep reactive ion etching, and surface micromachining. Several type of micromirror devices have been fabricated with rectangular and triangular electrodes. Triangular electrode devices displayed stable operation within a (/spl plusmn/5/spl deg/, /spl plusmn/5/spl deg/) (mechanical) angular range with voltage drives as low as 60 V.     

VHF single crystal silicon capacitive elliptic bulk-mode disk resonators-part II: implementation and characterization

This work, the second of two parts, reports on the implementation and characterization of high-quality factor (Q) side-supported single crystal silicon (SCS) disk resonators. The resonators are fabricated on SOI substrates using a HARPSS-based fabrication process and are 3 to 18 /spl mu/m thick. They consist of a single crystal silicon resonant disk structure and trench-refilled polysilicon drive and sense electrodes. The fabricated resonators have self-aligned, ultra-narrow capacitive gaps in the order of 100 nm. Quality factors of up to 46 000 in 100 mTorr vacuum and 26000 at atmospheric pressure are exhibited by 18 /spl mu/m thick SCS disk resonators of 30 /spl mu/m in diameter, operating in their elliptical bulk-mode at /spl sim/150 MHz. Motional resistance as low as 43.3 k/spl Omega/ was measured for an 18-/spl mu/m-thick resonator with 160 nm capacitive gaps at 149.3 MHz. The measured electrostatic frequency tuning of a 3-/spl mu/m-thick device with 120 nm capacitive gaps shows a tuning slope of -2.6 ppm/V. The temperature coefficient of frequency for this resonator is also measured to be -26 ppm//spl deg/C in the temperature range from 20 to 150/spl deg/C. The measurement results coincide with the electromechanical modeling presented in Part I.     

Microbridge testing on symmetrical trilayer films

In this paper, we extended the microbridge testing method to characterize the mechanical properties of symmetrical trilayer thin films. Theoretically, we analyzed the deformation of a trilayer microbridge sample with a deformable boundary condition and derived load-deflection formulas in closed-form. The slope of a load-deflection curve under small deformation gives the relationship between the bending stiffness and the residual force of a trilayer microbridge. Taking this relationship, we were able to assess simultaneously the Young's modulus of two kinds of materials composing the symmetrical trilayer film and the thickness-averaged residual stress of the film. Experimentally, we fabricated symmetrical trilayer microbridge samples of SiO/sub 2//Si/sub 3/N/sub 4//SiO/sub 2/ on 4-inch p-type (100) silicon wafers and conducted the microbridge tests with a load and displacement sensing nanoindenter system equipped with a microwedge indenter. The experimental results verified the proposed microbridge testing method. The thickness-averaged residual stress of the 1.1-/spl mu/m trilayer thin films was determined to be 8.8 MPa, while the Young's modulus of the 0.3-/spl mu/m silicon oxide layers and the Young's modulus of the 0.5-/spl mu/m silicon nitride layer were evaluated to be 31 GPa and 294 GPa, respectively.     

An integrated air-gap-capacitor pressure sensor and digital readoutwith sub-100 attofarad resolution

The fabrication and characterization of an integrated air-gap-capacitor pressure sensor are presented. The capacitor fabrication process uses standard IC processing to create NMOS circuits, and an added polysilicon layer to create poly-to-n⁺ capacitors with a 0.6-μm-thick dielectric using deposited oxide. Subsequent processing is used to produce deformable, parallel-plate, air-gap capacitors on the front side alongside MOS circuits. Sensor chips are fabricated using 100-μm×100-μm, 100-fF air-gap capacitors with on-chip circuitry. The sensor chip is a part of a capacitive measurement system that uses a charge-redistribution sense technique to achieve very high capacitance resolution. The behavior of the pressure sensor chips was studied as a function of applied pressure in the 0-240-kPa (0-35-psi) range. Measurements indicate a sensitivity of 0.93 mV/kPa (6.40 mV/psi) with a deflection of 10 nm/kPa (70 nm/psi) at 0-69 kPa (0-10 psi). Standard deviations indicate a static pressure resolution of 0.54 kPa (0.078 psi), which translates to 30 attofarads at a sampling frequency of 11 kHz     

Characterization of surface micromachined metallic microneedles

The purpose of the paper is to provide quantitative characterization of metallic microneedles. Mechanical and fluid flow experiments were performed to evaluate the buckling force, the penetration force, and the pressure versus flow rate characteristics of the microneedles. The microneedle design variations characterized included varying the shaft lengths, varying the tip taper angles/geometries, and the inclusion of micromechanical barbs. The penetration force was found to range from 7.8 gF for a microneedle of shaft length 500 /spl mu/m, to 9.4 gF for a length of 1500 /spl mu/m, both with a tip taper angle of 30/spl deg/. Microneedles with a linear tip taper angle of 30/spl deg/ penetrated 95 +% of the time without failure. The microneedles with a 15/spl deg/ and 20/spl deg/ linear tip taper penetrated 10% and 25% of the time, respectively. The buckling force was found to be 98.4 gF for a 500 /spl mu/m long microneedle shaft, 72.3 gF for a needle of shaft length 1000 /spl mu/m, and 51.6 gF for a 1500 /spl mu/m long shaft. The results demonstrate that the penetration force was 7.9% of the buckling force for 500 /spl mu/m long shafts, 11.6% for a 1000 /spl mu/m long shaft, and 18.2% for a 1500 /spl mu/m long microneedle shafts. The microneedle fluid flow characteristics were studied. An inlet pressure of 49.0 Pa was required for a flow rate of 1000 /spl mu/L/h and 243.0 Pa for a flow rate of 4000 /spl mu/L/h using air as the fluid medium. For water, an average pressure of 30.0 kPa was required for a flow rate of 1000 /spl mu/L/h and 106.0 kPa for a flow rate of 4000 /spl mu/L/h.     

Vertical comb array microactuators

A vertical actuator fabricated using a trench-refilled-with-polysilicon (TRiPs) process technology and employing an array of vertical oriented comb electrodes is presented. This actuator structure provides a linear drive to deflection characteristic and a large throw capability which are key features in many sensors, actuators and micromechanisms. The actuation principle and relevant theory is developed, including FastCap simulations for theoretical verification. Design simplifications have been suggested that enable one to use parallel plate analytical expressions which match simulation results with /spl sim/5.6% error. Several actuators were designed and fabricated using the 7-mask TRiPs technology with calculated drive voltages as low as 45 V producing 10 /spl mu/m of deflection. The actuators employed a mechanical structure that was 18 /spl mu/m tall using a polysilicon layer 1.5 /spl mu/m thick and occupying a total area of 750 /spl mu/m by 750 /spl mu/m. The actuators were successfully tested electrostatically and several microns of deflection were observed.