Mechanical properties and density of BC<Emphasis Type="Italic">x</Emphasis>N<Emphasis Type="Italic">y</Emphasis> films grown by low-pressure chemical vapor deposition from triethylamine borane

Boron carbonitride (BC _x N _y ) films of different compositions have been grown by low-pressure chemical vapor deposition using triethylamine borane as a single-source precursor and ammonia as an additional nitrogen source. Experiments were performed at various initial vapor compositions. The resultant films have been characterized by ellipsometry, IR spectroscopy, energy dispersive X-ray spectroscopy, scanning electron microscopy, nanoindentation, and surface acoustic wave spectroscopy. The mechanical properties of the films are shown to correlate with their density and chemical composition. With increasing initial ammonia partial pressure in the vapor phase, the elemental composition of the films moves away from boron carbide, approaching boron nitride, which is accompanied by a reduction in the Young’s modulus, hardness, and density of the films.     

立方氮化硅的冲击波合成实验研究

以α-Si₃N₄粉体作原材料, 采用炸药爆轰平面飞片加载 装置和样品回收技术进行了冲击波合成实验, 完整回收到合成样品, 经过酸处理, 对回收样品进行X射线衍射分析, 结果表明: 当加载压力超过50GPa而且冲击温度约3600～5000K时, α-Si₃N₄可以较完全地转化为γ-Si₃N₄. 本实验的研究结果建立了一种冲击压缩技术可单次合成克量级的立方氮化硅, 为进一步开展立方氮化硅的性能研究奠定了基础.     

Photoacoustic Studies of Cd<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript>Be<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se Mixed Crystals

This paper reports the results of photoacoustic measurements of Cd_1-xBe_xSe mixed crystals grown by the high pressure Bridgman method with varying concentrations of Be (0.1 < x < 0.2). For examining continuous wave photoacoustic spectra, a piezoelectric transducer (PZT) and an open cell were used. An increase of the energy gap with increasing x has been observed. The thermal diffusivity values were estimated using the dependence of the amplitude and phase of the PA signal on the light modulation frequency.Paper presented at the Fifteenth Symposium on Thermophysical Properties, June 22–27, 2003, Boulder, Colorado, U.S.A.     

Specific features of technology of electron irradiation of large-area <Emphasis Type="Italic">p</Emphasis>-<Emphasis Type="Italic">n</Emphasis> silicon structures

We have studied the influence of irradiation by 4-MeV electrons via flat metal screens on the main electrical characteristics of high-power silicon diodes intended to operate at currents up to 600 A. The electron irradiation was performed via metal masks, which led to the formation of enhanced recombination zones (ERZs) in the base region of p ⁺-n-n ⁺ silicon structures. It is shown that the local irradiation of a large-area diode structure improves (as compared to the total irradiation) the relationship been the reverse recovery time (t _rr ) and energy loss in the conducting state (U _f ), while decreasing the temperature sensitivity of the reverse current (I _R ). It is established that the relationships between t _rr , U _F , and I _R in locally irradiated structures depends on the experimental conditions (ERZ size).     

Thermodiffusion Coefficient Analysis of <Emphasis Type="Italic">n</Emphasis>-Dodecane /<Emphasis Type="Italic">n</Emphasis>-Hexane Mixture at Different Mass Fractions and Pressure Conditions

In this study, the thermodiffusion coefficient of n-dodecane/n-hexane binary mixture at 25 ^°C mean temperature was determined for several pressure conditions and mass fractions. The experimental technique used to determine the thermodiffusion coefficient was the thermograviational column of cylindrical configuration. In turn, thermophysical properties, such as density, thermal expansion, mass expansion and dynamic viscosity up to 10 MPa were also determined. The results obtained in this work showed a linear relation between the thermophysical properties and the pressure. Thermodiffusion coefficient values confirm a linear effect when the pressure increases. Additionally, a new correlation based on the thermodiffusion coefficient for n C₁₂/n C₆ binary mixture at 25 ^°C temperature for any mass fraction and pressures, which reproduces the data within the experimental error, was proposed.     

Speed of sound in <Emphasis Type="Italic">n</Emphasis>-hexane, <Emphasis Type="Italic">n</Emphasis>-octane, <Emphasis Type="Italic">n</Emphasis>-decane,and <Emphasis Type="Italic">n</Emphasis>-hexadecane in the liquid state

This paper describes an improved experimental facility for measuring the speed of sound in liquids with an accuracy of up to 0.1%. Measurements of the speed of sound in liquid n-hexane, n-octane, n-decane, and n-hexadecane at temperatures of 298–433 K and pressures of 0.1–100 MPa have been made. It has been shown that in the possible comparison range the obtained values of the speed of sound are in good agreement with the literature data. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 81, No. 4, pp. 732–736, July–August, 2008.     

Rate constant of <Emphasis Type="Italic">VT</Emphasis>/<Emphasis Type="Italic">VV</Emphasis> energy exchange in the collision of di- and polyatomic molecules within the SFO model

The numerical-analytical investigation of the shock forced oscillator (SFO) model is complete. Approaches for calculating the probabilities of quantum transitions from the initial to some final state with VV energy exchange of diatomic molecules and VV and VT energy exchange of polyatomic molecules are considered. Formulas for calculating the probabilities of the \({W_{{i_1},{i_2} \to {f_1},{f_2}}}\) transition for VV energy exchange in collision of molecules AB and CD within the harmonic approximation are represented (SFHO model). It is shown that the probabilities of a quantum transition in VV and VT energy exchange of polyatomic molecules can be calculated in terms of the quantum transition probability for VT energy exchange of diatomic molecules on the assumption of “frozen” quantum transitions of polyatomic molecules. The problem of determining the dissociation rate constant is considered by the example of a nitrogen molecule (N₂) in the N₂–N₂ system for the “improved” Lennard-Jones potential in VV energy exchange. The calculated dissociation rate constant is compared with the experimental data obtained for a shock tube.     

Improvement of <Emphasis Type="Italic">in vitro</Emphasis> behavior of an Mg alloy using a nanostructured composite bioceramic coating

Magnesium (Mg) alloys as a new group of biodegradable metal implants are being extensively investigated as a promising selection for biomaterials applications due to their apt mechanical and biological performance. However, as a foremost drawback of Mg alloys, the high degradation in body fluid prevents its clinical applications. In this work, a bioceramic composite coating is developed composed of diopside, bredigite, and fluoridated hydroxyapatite on the AZ91 Mg alloy in order to moderate the degradation rate, while improving its bioactivity, cell compatibility, and mechanical integrity. Microstructural studies were performed using a transmission electron microscope (TEM), scanning electron microscope (SEM), X-ray diffraction (XRD) analysis, and energy dispersive spectroscopy (EDS). The degradation properties of samples were carried out under two steps, including electrochemical corrosion test and immersion test in simulated body fluid (SBF). Additionally, compression test was performed to evaluate the mechanical integrity of the specimens. L-929 fibroblast cells were cultured on the samples to determine the cell compatibility of the samples, including the cell viability and attachment. The degradation results suggest that the composite coating decreases the degradation and improves the bioactivity of AZ91 Mg alloy substrate. No considerable deterioration in the compression strength was observed for the coated samples compared to the uncoated sample after 4 weeks immersion. Cytotoxicity test indicated that the coatings improve the cell compatibility of AZ91 alloy for L-929 cells.     

The Activation Energy <Emphasis Type="Italic">U</Emphasis>(<Emphasis Type="Italic">T</Emphasis>,<Emphasis Type="Italic">H</Emphasis>) in Y-based Superconductors

Based on the Arrhenius equation, a method to calculate the activation energy from the resistance transition is proposed for high temperature superconductors. This method is applied to the Y-based superconductors. The activation energy is found to be U(T,H)∼(1−T/T _c )^4.8(H/H ₀)^−3.8 of YBCO crystal, and U(T,H)∼(1−T/T _c )^3.3(H/H ₀)^−2.2 of Er doped MTG YBCO crystal, respectively. With the obtained activation energy U(T,H), the lower part of the experimental curve ρ(T,H) and its derivative can be reproduced.      

<Emphasis Type="Italic">Streptococcus sanguinis</Emphasis> adhesion on titanium rough surfaces: effect of shot-blasting particles

Dental implant failure is commonly associated to dental plaque formation. This problem starts with bacterial colonization on implant surface upon implantation. Early colonizers (such as Streptococcus sanguinis) play a key role on that process, because they attach directly to the surface and facilitate adhesion of later colonizers. Surface treatments have been focused to improve osseointegration, where shot-blasting is one of the most used. However the effects on bacterial adhesion on that sort of surfaces have not been elucidated at all. A methodological procedure to test bacterial adherence to titanium shot-blasted surfaces (alumina and silicon carbide) by quantifying bacterial detached cells per area unit, was performed. In parallel, the surface properties of samples (i.e., roughness and surface energy), were analyzed in order to assess the relationship between surface treatment and bacterial adhesion. Rather than roughness, surface energy correlated to physicochemical properties of shot-blasted particles appears as critical factors for S. sanguinis adherence to titanium surfaces.     

Binding energies of Si 2<Emphasis Type="Italic">p</Emphasis> and Co 3<Emphasis Type="Italic">p</Emphasis> electrons in cobalt silicides

The binding energies of Si 2p and Co 3p core-shell electrons in four stable cobalt silicides (Co₃Si, Co₂Si, CoSi, and CoSi₂) have been determined by high-resolution photoelectron spectroscopy using synchrotron radiation. The silicides were formed by solid-state epitaxy under identical conditions on Si(100), Si(110), and Si(111) faces of silicon single crystals.     

Optical,Structural, and Photocarrier Studies of Cu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>(CdTe)<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript>O<Subscript><Emphasis Type="Italic">z</Emphasis></Subscript> Thin Films

In this research quaternary alloy thin films made of Cu, CdTe, and O have been grown and characterized. The samples used in this investigation were grown simultaneously by reactive RF co-sputtering and by introducing oxygen and argon in the chamber during growth and changing the power in the Cu target from 10 W to 50 W. The carrier distribution as a function of the position was studied by using energy dispersive spectroscopy–scanning electronic microscopy (EDS–SEM), micro-Raman spectroscopy, and photocarrier images. Structural characterization was carried out by using X-ray diffraction. According to the results, a lateral carrier distribution was found in all samples and a new phase identified as Cu₂Te was revealed for samples grown at 50 W.     

Triangular Ising Ferromagnet with Mixed Spins (<Emphasis Type="Italic">A</Emphasis> = 1/2, <Emphasis Type="Italic">B</Emphasis> = 1/2, <Emphasis Type="Italic">C</Emphasis> = 1): Dynamic Magnetic Properties and Hysteresis Curves

The dynamic properties of the triangular Ising ferromagnet consisting of the mixed spins A = 1/2, B = 1/2, and C = 1 is studied by using the mean-field theory (MFT) as well as Glauber-type stochastic dynamics (GSD). The coupling equations to investigate dynamic behaviors of the system are calculated, and phase transitions, phase diagrams, and hysteresis curves are obtained. From these studies, first- and second-order transition lines, the dynamic phase diagrams (DPDs) in the (T,h ₀) and (T,d) planes, and single hysteresis curves are presented. In the DPDs, dynamic tricritical point due to the first- and second-order phase transitions are observed. It is found that the dynamic hysteresis properties of the triangular system strongly depend on the temperature and crystal field.     

Acoustic and thermodynamic properties of the binary liquid system <Emphasis Type="Italic">n</Emphasis>-dodecane+<Emphasis Type="Italic">n</Emphasis>-hexadecane

By the method of direct measurement of the pulse-passage time, the velocity of sound in a binary liquid mixture n-dodecane+n-hexadecane has been investigated in the temperature range 298–433 K and in the pressure range 0.1–100.1 MPa. The maximum measurement error is 0.1%. Experimental data on the velocity of sound for the investigated mixture have been obtained for the first time. On the basis of the data on the velocity of sound, we have determined the density, the isobaric expansion coefficient, the isobaric and isochoric heat capacities, and the isothermal compressibility coefficient of a mixture of three compositions in the 298–433 K temperature range and in the 0.1–100.1 MPa range of pressures. The coefficients of the Tate equations in the above range of parameters have been calculated. A table of thermodynamic properties of the mixture is presented.     

Electrical and photoelectric properties of electrodeposited <Emphasis Type="Italic">n</Emphasis>-Si/<Emphasis Type="Italic">n</Emphasis>-Cd<Subscript>1 - <Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>x</Subscript>S heterojunctions

n-Si/n-Cd_{1 - x} Zn_xS heterojunctions are produced by electrodepositing Cd_{1 - x} Zn_xS (0 x 0.6) films on silicon substrates, and their electrical and photoelectric properties are studied. The results demonstrate that the spectral response of the heterojunctions depends strongly on the film composition and heat-treatment conditions. The highest photosensitivity is achieved at x = 0.6 by heat treatment at 350°C for 7 min: V _OC = 0.5 V and I _SC = 3.8 mA/cm² under illumination of 1500 lx at 300 K.Translated from Neorganicheskie Materialy, Vol. 41, No. 3, 2005, pp. 276–280.Original Russian Text Copyright © 2005 by Mamedov, Gasanov, Amirova.This revised version was published online in April 2005 with a corrected cover date.This revised version was published online in April 2005 with a corrected cover date.     

Modification of radiation hardness of silicon <Emphasis Type="Italic">p</Emphasis>-<Emphasis Type="Italic">n</Emphasis> junction photodiodes by hydrogen plasma treatment

The influence of treatment by a low energy hydrogen ions on degradation of the spectral response, diffusion length of minority carriers (L_D) and efficiency (η) of silicon p-n junction photodiodes (solar cells without antireflective coatings) under the effect of electron irradiation has been investigated. Evaluation of the radiation hardness was made by subjecting the unhydrogenated and hydrogenated photodiodes to 1 MeV electron irradiation with doses of (0.1÷3) × 10¹⁵ cm^-2. The measurements have shown that pre-hydrogenation of the silicon p-n junction devices significantly decreases the degradation rate of L_D and η thereby improving their radiation hardness.     

Effect of a thin <Emphasis Type="Italic">a</Emphasis>-SiO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>: H film on plasmonic properties of gold nanoparticles

Data on the optical properties of a nanocomposite material constituted by gold nanoparticles covered with a thin film of amorphous hydrogenated silicon suboxide have been obtained for the first time. The thin film was deposited by gas-jet electron-beam plasma chemical-vapor deposition. As gold particles situated on the surface of quartz glass are covered with a thin a-SiO _x : H film, their plasmonic resonance peak is shifted to longer wavelengths. The calculations made in the study demonstrated a good agreement with the experiment.     

Thermodynamic modeling of BC<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>N<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> chemical vapor deposition from mixtures of <Emphasis Type="Italic">N</Emphasis>-trimethylborazine and nitrogen

Thermodynamic modeling of the chemical vapor deposition of boron-carbonitride-based films in the B-C-N-H-O system using mixtures of N-trimethylborazine and nitrogen is carried out for reduced pressures (13.3 and 1.33 Pa) and a wide temperature range (300–1300 K). The source of oxygen impurities in this system is a residual pressure of 0.40 Pa. The results indicate that films of various compositions can be grown. The conditions for the deposition of BC _x N _y films are identified.     

Nernst Signal in High-<Emphasis Type="Italic">T</Emphasis><Subscript><Emphasis Type="Italic">c</Emphasis></Subscript> Superconductors

The time-dependent Ginzburg–Landau equation with thermal noise is used to calculate the Nernst signal e _N , describing the Nernst effect, in type-II superconductor in the vortex-liquid regime. The Gaussian method used is an elaboration of the Hartree–Fock method. An additional assumption often made in analytical calculations that only the lowest Landau level significantly contributes to physical quantities of interest in the high-field limit is lifted by including all the Landau levels. The values of e _N are in good quantitative agreement with experimental data for temperature close to T _c on Bi₂Sr₂CaCu₂O_8+δ and Bi₂Sr₂Ca₂Cu₃O_10+δ .     

Effect of point defects on the recombination activity of copper precipitates in <Emphasis Type="Italic">p</Emphasis>-type Czochralski silicon

The effect of point defects on the recombination activity of copper (Cu) precipitates in p-type Czochralski (CZ) silicon has been investigated by means of microwave photoconductivity decay and electron beam induced current (EBIC). It was found that the value of the reciprocal of effective minority carrier lifetime and EBIC contrast of the samples with pre-annealing in Ar, without pre-annealing and with pre-annealing in O₂, related to the recombination activity of Cu precipitates, decreased in turn. It was considered that the highest recombination activity of Cu precipitates in the sample with pre-annealing in Ar was mainly attributed to the relative higher minority carrier capture cross section of Cu precipitates, which was affected by the induced vacancies. While the weakest recombination activity of Cu precipitates in the sample with pre-annealing in O₂ was ascribed to the relative lower density of Cu precipitates, which was influenced by the induced silicon interstitials.