Freestanding, Micromachined, Multimode Silicon Optical Waveguides at lambda = 1.3 mum for Microelectromechanical Systems Technology

Freestanding, multimode optical channel waveguides formed by micromachining silicon are demonstrated. Fabrication utilizes standard microelectromechanical systems (MEMS) technology. Losses in the 0.57-0.80-dB/cm range are measured for channel waveguides with an air-silicon-air structure, whereas losses in the 1.12-1.52-dB/cm range are measured for channel waveguides with a SiO(2)-silicon-SiO(2) structure. Freestanding channel waveguides, along with optical fibers and other MEMS structures, can readily be mounted on a silicon MEMS platform to provide optimal alignment for maximizing optical coupling, and they are thus expected to be useful in devices that involve light and MEMS structures.     

Photonic devices based on preferential etching

We introduce a design concept of optical waveguides characterized by a practical and reproducible process based on preferential etching of crystalline silicon substrates. Low-loss waveguides, spot-size converters, and power dividers have been obtained with polymers. We have also aligned liquid crystals in the waveguides and demonstrated guided propagation. Therefore this technology is a suitable platform for soft-matter photonics and heterogeneous integration.     

Low loss, low refractive index fluorinated self-crosslinking polymer waveguides for optical applications

Synthesis and optical applications of low loss methacrylate-based fluorinated polymers are described. The synthesis of well defined self-crosslinking fluorinated polymers has been carried out in order to tune refractive index in the range of 1.390 < n < 1.450. After thermal crosslinking, one single lithographic step followed by reactive ion etching is necessary to monomode optical waveguide fabrication on silicon substrates. Optical losses lower than 1 dB/cm at 1300 nm and 2 dB/cm at 1550 nm were measured for highly confined modes. Efficient chip coupling to lensed optical fibers was obtained. Using waveguides with an effective index close to that of bulk silica, a significant coupling interaction between the guided modes and the whispering gallery modes of a silica microsphere was evidenced thus opening the way for new device applications.     

Analysis of Scaling Strategies for Sub-30 nm Double-Gate SOI N-MOSFETs

State-of-the-art device simulation is applied to the analysis of possible scaling strategies for the future CMOS technology, adopting the ultrathin silicon body (UTB) double-gate (DG) MOSFET and considering the main figures of merit (FOM) for the high-performance N-MOS transistor. The results of our analysis confirm the potentials of UTB-DG MOSFETs. In particular, the possibility to control the short-channel effects by thinning the silicon layer is fully exploited allowing to adopt almost undoped silicon channel, leading to reduced transversal field. As a consequence, the impact of surface roughness at the Si-oxide interface and the gate tunneling leakage current are substantially reduced compared to the case of highly doped bulk MOSFETs. According to our results, thanks to the suppression of gate leakage current, scaling of the UTB-DG MOSFET down to the 32 nm technology node appears possible adopting -based gate dielectrics. In spite of the improved mobility at given inversion charge density, the simulated on-currents are substantially lower than those required by the 2005 ITRS for the 45 and 32 nm nodes . Nonetheless, thanks to relaxed scaling of the oxide thickness, hence to reduced gate capacitance, the requirements in terms of intrinsic delay and power-delay product can be satisfied. The issue of variability is analyzed by evaluating the dependence of the key FOM on the variation of critical dimensions such as the thickness of the gate oxide and of the silicon layer.     

Second-harmonic generation in silicon waveguides strained by silicon nitride

Silicon photonics meets the electronics requirement of increased speed and bandwidth with on-chip optical networks. All-optical data management requires nonlinear silicon photonics. In silicon only third-order optical nonlinearities are present owing to its crystalline inversion symmetry. Introducing a second-order nonlinearity into silicon photonics by proper material engineering would be highly desirable. It would enable devices for wideband wavelength conversion operating at relatively low optical powers. Here we show that a sizeable second-order nonlinearity at optical wavelengths is induced in a silicon waveguide by using a stressing silicon nitride overlayer. We carried out second-harmonic-generation experiments and first-principle calculations, which both yield large values of strain-induced bulk second-order nonlinear susceptibility, up to 40 pm V(-1) at 2,300 nm. We envisage that nonlinear strained silicon could provide a competing platform for a new class of integrated light sources spanning the near- to mid-infrared spectrum from 1.2 to 10 μm.     

Mid-infrared materials and devices on a Si platform for optical sensing

In this article, we review our recent work on mid-infrared (mid-IR) photonic materials and devices fabricated on silicon for on-chip sensing applications. Pedestal waveguides based on silicon are demonstrated as broadband mid-IR sensors. Our low-loss mid-IR directional couplers demonstrated in SiN_x waveguides are useful in differential sensing applications. Photonic crystal cavities and microdisk resonators based on chalcogenide glasses for high sensitivity are also demonstrated as effective mid-IR sensors. Polymer-based functionalization layers, to enhance the sensitivity and selectivity of our sensor devices, are also presented. We discuss the design of mid-IR chalcogenide waveguides integrated with polycrystalline PbTe detectors on a monolithic silicon platform for optical sensing, wherein the use of a low-index spacer layer enables the evanescent coupling of mid-IR light from the waveguides to the detector. Finally, we show the successful fabrication processing of our first prototype mid-IR waveguide-integrated detectors.     

Deposition and characterization of silica-based films by helicon-activated reactive evaporation applied to optical waveguide fabrication

Planar silicon dioxide optical waveguides were deposited by use of a plasma-activated reactive evaporation system, at a low deposition temperature and with reduced hydrogen contamination, on thermally oxidized silicon wafers. The deposited films show a refractive-index inhomogeneity of less than 0.1%, a thickness nonuniformity of less than 5%, and a material birefringence of approximately 5 x 10(-4). Rib-type channel waveguides were formed on the deposited films by means of hydrofluoric acid etching. The transmission loss of the rib waveguides is determined to be as low as 0.3 dB/cm at a wavelength of 1310 nm for TE polarization, after subtraction of the calculated leakage and scattering losses. Owing to the presence of the OH vibrational overtone band, an additional loss peak of 1 dB/cm is found near the 1385-nm wavelength. The experimental results of transmission loss at wavelengths of 1310 and 1550 nm are compared with analytic expressions for interface scattering and leakage loss.     

Optical gain and stimulated emission in periodic nanopatterned crystalline silicon

Persistent efforts have been made to achieve efficient light emission from silicon in the hope of extending the reach of silicon technology into fully integrated optoelectronic circuits, meeting the needs for high-bandwidth intrachip and interchip connects. Enhanced light emission from silicon is known to be theoretically possible, enabled mostly through quantum-confinement effects. Furthermore, Raman-laser conversion was demonstrated in silicon waveguides. Here we report on optical gain and stimulated emission in uniaxially nanopatterned silicon-on-insulator using a nanopore array as an etching mask. In edge-emission measurements, we observed threshold behaviour, optical gain, longitudinal cavity modes and linewidth narrowing, along with a collimated far-field pattern, all indicative of amplification and stimulated emission. The sub-bandgap 1,278 nm emission peak is attributed to A-centre mediated phononless direct recombination between trapped electrons and free holes. The controlled nanoscale silicon engineering, combined with the low material loss in this sub-bandgap spectral range and the long electron lifetime in such A-type trapping centres, gives rise to the measured optical gain and stimulated emission and provides a new pathway to enhance light emission from silicon.     

In-Plane Integration of Polymer Microfluidic Channels With Optical Waveguides– A Preliminary Investigation

The next major challenges for lab-on-a-chip (LoC) technology are 1) the integration of microfluidics with optical detection technologies and 2) the large-scale production of devices at a low cost. In this paper the fabrication and characterisation of a simple optical LoC platform comprising integrated multimode waveguides and microfluidic channels based on a photo-patternable acrylate based polymer is reported. The polymer can be patterned into both waveguides and microfluidic channels using photolithography. Devices are therefore both quick and cost-effective to fabricate, resulting in chips that are potentially disposable. The devices are designed to be highly sensitive, using an in-plane direct excitation configuration in which waveguides intersect the microfluidic channel orthogonally. The waveguides are used both to guide the excitation light and to collect the fluorescence signal from the analyte. The potential of the device to be used for fluorescence measurements is demonstrated using an aqueous solution of sodium fluorescein. A detection limit of 7 nM is achieved. The possibilities offered by such a device design, in providing a cost-effective and disposable measurement system based on the integration of optical waveguides with LoC technology is discussed.     

Microfabricated polymer analysis chip for optical detection

A coupling between multimode polymer waveguides and microfluidic channels on a polymethylmethacrylate (PMMA) capillary electrophoresis (CE)-chip for optical analytical applications has been successfully realised. This technology allows the integration of polymer optical waveguides together with hermetically sealed fluidic channels. The microchannels and waveguides are made in PMMA by the approved hot-embossing technology. The technology developed for the fabrication of polymer waveguides on the microfluidic chip offers the possibility of great flexibility in the choice of core materials, design and alignment of the polymer waveguides. The integration of polymer waveguides on an analysis chip enables highly spatially resolved optical detection without the large and expensive conventionally used apparatus. The optical properties of the analytical system developed are verified by transmission and propagation loss measurements. The results of measurements prove the suitability of the presented device for optical applications between 440 and 800 nm. This was shown with absorbance measurements of the dye Sulfanilazochromotrop (SPADNS) within 50 microm fluidic channels.     

Self-Aligned, Extremely High Frequency III-V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates

This paper reports the radio frequency (RF) performance of InAs nanomembrane transistors on both mechanically rigid and flexible substrates. We have employed a self-aligned device architecture by using a T-shaped gate structure to fabricate high performance InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with channel lengths down to 75 nm. RF measurements reveal that the InAs devices made on a silicon substrate exhibit a cutoff frequency (f(t)) of ～165 GHz, which is one of the best results achieved in III-V MOSFETs on silicon. Similarly, the devices fabricated on a bendable polyimide substrate provide a f(t) of ～105 GHz, representing the best performance achieved for transistors fabricated directly on mechanically flexible substrates. The results demonstrate the potential of III-V-on-insulator platform for extremely high-frequency (EHF) electronics on both conventional silicon and flexible substrates.     

Flexible Transient Optical Waveguides and Surface‐Wave Biosensors Constructed from Monocrystalline Silicon

Optical technologies offer important capabilities in both biological research and clinical care. Recent interest is in implantable devices that provide intimate optical coupling to biological tissues for a finite time period and then undergo full bioresorption into benign products, thereby serving as temporary implants for diagnosis and/or therapy. The results presented here establish a silicon‐based, bioresorbable photonic platform that relies on thin filaments of monocrystalline silicon encapsulated by polymers as flexible, transient optical waveguides for accurate light delivery and sensing at targeted sites in biological systems. Comprehensive studies of the mechanical and optical properties associated with bending and unfurling the waveguides from wafer‐scale sources of materials establish general guidelines in fabrication and design. Monitoring biochemical species such as glucose and tracking physiological parameters such as oxygen saturation using near‐infrared spectroscopic methods demonstrate modes of utility in biomedicine. These concepts provide versatile capabilities in biomedical diagnosis, therapy, deep‐tissue imaging, and surgery, and suggest a broad range of opportunities for silicon photonics in bioresorbable technologies.     

Analysis of optical sensing behavior of a novel optical bean-shaped resonator biosensor integrated with MZI configuration

A novel optical bean-shaped resonator (BR) biosensor integrated with Mach–Zehnder Interferometer structure based on a silicon-on-isolator platform has been proposed and investigated theoretically and numerically. By characterizing and optimizing the structure, our bean-shaped device exhibits a high extinction ratio over 50?dB and a high Q factor of about 5.46?×?10⁴ in a wide wavelength span. The quasi-free spectral range (FSR) is about 469?nm. The sensitivity of 688.6?nm/refractive index unit (RIU) is achieved for bulk changes of refractive index and the detection range varies from 10^?6 to 0.689 RIU. More complex bean-shaped structures can also be cascaded by adding more bending waveguides in BR to obtain wider quasi-FSR range.     

Sub-30 nm gate template fabrication for nanoimprint lithography using spacer patterning technology

In this study, we present a spacer patterning technology for sub-30 nm gate template which is used for nano-scale MOSFETs fabrication. A spacer patterning technology using a poly-silicon micro-feature and a chemical vapor deposition (CVD) SiO2 spacer has been developed, and the sub-30 nm structures by conventional dry etching and chemical mechanical polishing are demonstrated. The minimum-sized features are defined not by the photolithography but by the CVD film thickness. Therefore, this technology yields a large-area template with critical dimension of minimum-sized features much smaller than that achieved by optical lithography.     

Magneto-optical non-reciprocal devices in silicon photonics

Silicon waveguide optical non-reciprocal devices based on the magneto-optical effect are reviewed. The non-reciprocal phase shift caused by the first-order magneto-optical effect is effective in realizing optical non-reciprocal devices in silicon waveguide platforms. In a silicon-on-insulator waveguide, the low refractive index of the buried oxide layer enhances the magneto-optical phase shift, which reduces the device footprints. A surface activated direct bonding technique was developed to integrate a magneto-optical garnet crystal on the silicon waveguides. A silicon waveguide optical isolator based on the magneto-optical phase shift was demonstrated with an optical isolation of 30 dB and insertion loss of 13 dB at a wavelength of 1548 nm. Furthermore, a four port optical circulator was demonstrated with maximum isolations of 15.3 and 9.3 dB in cross and bar ports, respectively, at a wavelength of 1531 nm.     

Wavelength-selective filter based on a hollow optical waveguide

In this paper, we describe a theoretical and experimental study of a wavelength-selective filter derived from hollow optical waveguides composed of Bragg reflectors with defect layers on a silicon substrate. The defect states of the transmission filter at wavelengths of 1519 and 1571 nm were realized using one-dimensional photonic crystals (1D PCs) formed from a-Si and SiO(2). The transmission spectra of the filter waveguides and the band structure of the defect 1D PCs were calculated using the two-dimensional finite-difference time-domain and transfer matrix methods, respectively. The device exhibited the narrow bandwidths of 0.5 and 1.1 nm for wavelengths of 1571 and 1519 nm, respectively.     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

Narrowband Bragg reflectors in Ti:LiNbO3 optical waveguides

Bragg grating reflectors etched in amorphous silicon overlay films have been integrated with Ti:LiNbO3 optical waveguides to obtain a narrow (0.05 nm) reflectance spectrum with a > 20 dB dip in the transmittance spectrum. These results were realized at a wavelength of 1542.7 nm for TE polarization on an x-cut, y-propagating substrate with gratings etched to a depth of approximately 93 nm in a 105 nm thick silicon film over a length of 12.5 mm. The reflectance in the channel waveguides is found to be strongly dependent on the depth of the etched grating. The effect of the Bragg waveguide loss factor on the transmittance and reflectance spectra is investigated by using a model for contradirectional coupling that includes an attenuation coefficient. The values for coupling constants kappa and amplitude attenuation constants alpha of samples etched for different time durations to control the grating depths are obtained from the model through the use of the depth of the dips in the transmittance spectra and the spectral widths of the reflectance peaks. It is concluded that the corrugated Si overlay film increases the insertion loss by approximately 2.7 dB, and the loss is not significantly affected by the grating depth.     

III–Vs on Si for photonic applications—A monolithic approach

Epitaxial lateral overgrowth (ELOG) technology is demonstrated as a viable technology to realize monolithic integration of III-Vs on silicon. As an alternative to wafer-to-wafer bonding and die-to-wafer bonding, ELOG provides an attractive platform for fabricating discrete and integrated components in high volume at low cost. A possible route for monolithic integration of III–Vs on silicon for silicon photonics is exemplified by the case of a monolithic evanescently coupled silicon laser (MECSL) by combining InP on Si/SiO₂ through ELOG. Passive waveguide in MECSL also acts as the defect filtering mask in ELOG. The structural design of a monolithic evanescently coupled silicon laser (MECSL) and its thermal resistivity are established through simulations. Material studies to realize the above laser through ELOG are undertaken by studying appropriate ELOG pattern designs to achieve InP on narrow regions of silicon. We show that defect-free InP can be obtained on SiO₂ as the first step which paves the way for realizing active photonic devices on Si/SiO₂ waveguides, e.g. an MECSL.     

Planar antiresonant reflecting optical waveguides as integrated optical refractometer

This paper reports on an integrated refractometer sensor, useful for measuring chemical quantities, based on antiresonant reflecting optical waveguides (ARROWs). We show that, by a suitable design, the attenuation in ARROW waveguides can strongly depend on the refractive index of the superstrate layer. We use this property to design and realize an integrated refractometer. The proposed sensor structure is unique in that it consists in the ARROW waveguide itself acting like a vertical interferometer. The device is fabricated using standard silicon technology fully compatible with bipolar and CMOS integrated circuit process. The measurement results show a sensing resolution of /spl Delta/n = 6e - 4 when used in a solution with a refractive index of 1.4600.