The Influence of the Precursor on the Formation of Bi2O3 Polymorphs in CSD‐Derived Thin Films

This work examines the synthesis and characterization of crack‐free, β‐Bi₂O₃ thin films prepared on Pt/TiO₂/SiO₂/Si or corundum substrates using the sol‐gel method. We observed that the Bi‐based precursor has a pronounced influence on the β‐Bi₂O₃ phase formation. Well‐crystallized, single β‐Bi₂O₃ thin films were obtained from Bi‐2ethylhexanoate at a temperature of 400°C. In contrast, thin films deposited from Bi‐nitrate and Bi‐acetate resulted in non‐single Bi₂O₃ phase formation. TEOS was used for the stabilization of the β‐Bi₂O₃ phase. The phase composition of the thin films was characterized by means of X‐ray diffraction (XRD), whereas the morphology and thickness of the thin films were studied using scanning electron microscopy (SEM). The β‐Bi₂O₃ films' dielectric properties were characterized utilizing microwave‐frequency measurement techniques: (1) the split‐post dielectric resonator method (15 GHz) and (2) the planar capacitor configuration (1–5 GHz). The dielectric constant and dielectric loss measured at 15 GHz were 257 and 7.5 × 10^?3, respectively.     

Sol–Gel Synthesis and Characterization of Na0.5Bi0.5TiO3–NaTaO3Thin Films

Thin films with the composition 70 mol% Na_0.5Bi_0.5TiO₃ + 30 mol% NaTaO₃ were prepared by sol–gel synthesis and spin coating. The influence of the annealing temperature on the microstructural development and its further influence on the dielectric properties in the low‐ (kHz–MHz) and microwave‐frequency (15 GHz) ranges were investigated. In the low‐frequency range we observed that with an increasing annealing temperature from 550°C to 650°C the average grain size increased from 90 to 170 nm, which led to an increase in the dielectric permittivity from 130 to 240. The temperature‐stable dielectric properties were measured for thin films annealed at 650°C in the temperature range between ?25°C and 150°C. The thin films deposited on corundum substrates had a lower average grain size than those on Si/SiO₂/TiO₂/Pt substrates. The highest average grain size of 130 nm was obtained for a thin film annealed at 600°C, which displayed a dielectric permittivity of 130, measured at 15 GHz.     

Preparation and electrical properties of Bi2Zn2/3Nb4/3O7 thin films deposited at room temperature for embedded capacitor applications

Bi₂Zn_2/3Nb_4/3O₇ thin films were deposited at room temperature on Pt/Ti/SiO₂/Si(1 0 0) and polymer-based copper clad laminate (CCL) substrates by pulsed laser deposition. Bi₂Zn_2/3Nb_4/3O₇ thin films were deposited in situ with no intentional heating under an oxygen pressure of 4 Pa and then post-annealed at 150 °C for 20 min. It was found that the films are still amorphous in nature, which was confirmed by the XRD analysis. It has been shown that the surface roughness of the substrates has a significant influence on the electrical properties of the dielectric films, especially on the leakage current. Bi₂Zn_2/3Nb_4/3O₇ thin films deposited on Pt/Ti/SiO₂/Si(1 0 0) substrates exhibit superior dielectric characteristics. The dielectric constant and loss tangent are 59.8 and 0.008 at 10 kHz, respectively. Leakage current density is 2.5 × 10^?7 A/cm² at an applied electric field of 400 kV/cm. Bi₂Zn_2/3Nb_4/3O₇ thin films deposited on CCL substrates exhibit the dielectric constant of 60 and loss tangent of 0.018, respectively. Leakage current density is less than 1 × 10^?6 A/cm² at 200 kV/cm.     

Microwave dielectric and nonlinear optical studies on radio‐frequency sputtered Dy2O3‐doped KNN thin films

We report the effect of oxygen mixing percentage (OMP) on structural, microstructural, dielectric, linear, and nonlinear optical properties of Dy₂O₃‐doped (K_0.5Na_0.5)NbO₃ thin films. The (K_0.5Na_0.5)NbO₃ + 0.5 wt%Dy₂O₃ (KNN05D) ferroelectric thin films were deposited on to quartz and Pt/Ti/SiO₂/Si substrates by RF magnetron sputtering. An increase in the refractive index from 2.08 to 2.21 and a decrease in the optical bandgap from 4.30 to 4.28 eV indicate the improvement in crystallinity, which is also confirmed from Raman studies. A high relative permittivity (ε_r=281‐332) and low loss tangent (tanδ=1.2%‐1.9%) were obtained for the films deposited in 100% OMP, measured at microwave frequencies (5‐15 GHz). The leakage current of the films found to be as low as 9.90×10^?9 A/cm² at 150 kV/cm and Poole‐Frenkel emission is the dominant conduction mechanism in the films. The third order nonlinear optical properties of the KNN05D films were investigated using modified single beam z‐scan method. The third order nonlinear susceptibility (?χ⁽³⁾?) values of KNN05D films increased from 0.69×10^?3 esu to 1.40×10^?3 esu with an increase in OMP. The larger and positive nonlinear refractive index n₂=7.04×10^?6 cm²/W, and nonlinear absorption coefficient β=1.70 cm/W were obtained for the 100% OMP film, indicating that KNN05D films are good candidates for the applications in nonlinear photonics and high‐frequency devices.     

Effect of excess Bi2O3 on structures and dielectric properties of Bi1.5Zn1.0Nb1.5O7 thin films deposited at room temperature by RF magnetron sputtering

To compensate for bismuth loss that occurred during the film deposition process, Bi_1.5Zn_1.0Nb_1.5O₇ (BZN) thin films were deposited at room temperature from the ceramic targets containing various excess amounts of bismuth (0–20 mol%) on Pt/TiO₂/SiO₂/Si substrates by using RF magnetron sputtering technique. The effect of bismuth excess content on the microstructure and electrical properties of BZN thin films was studied. The microstructure and chemical states of the thin films were studied by SEM and XPS. EPMA was employed to assess the film stoichiometry. The X-ray diffraction analysis reveals that the BZN thin films exhibit the amorphous structure in nature. An appropriate amount of excess bismuth improves the dielectric and electrical properties of BZN thin films, while too much excess bismuth leads to deterioration of the properties. BZN thin film with 5 mol% excess bismuth exhibits a dielectric constant of 61 with a loss of 0.4% at 10 kHz and leakage current of 7.26×10^?7 A/cm² at an electric field of 200 kV/cm.     

Sol‐gel derived TiNb2O7 dielectric thin films for transparent electronic applications

To reduce power consumption of transparent oxide‐semiconductor thin film transistors, a gate dielectric material with high dielectric constant and low leakage current density is favorable. According to previous study, the bulk TiNb₂O₇ with outstanding dielectric properties may have an interest in its thin‐film form. The optical, chemical states and surface morphology of sol‐gel derived TiNb₂O₇ (TNO) thin films are investigated the effect of postannealing temperature lower than 500°C, which is crucial to the glass transition temperature. All films possess a transmittance near 80% in the visible region. The existence of non‐lattice oxygen in the TNO film is proposed. The peak area ratio of non‐lattice oxygen plays an important role in the control of leakage current density of MIM capacitors. Also, the capacitance density and dissipation factor were affected by the indium tin oxide (ITO) sheet resistance at high frequencies. The sample after postannealing at 300°C and electrode‐annealing at 150°C possesses a high dielectric constant (>30 at 1 MHz) and a low leakage current density (<1 × 10^?6 A/cm² at 1 V), which makes it a very promising gate dielectric material for transparent oxide‐semiconductor thin film transistors.     

Enhanced dielectric and energy-storage properties in BiFeO3-modified Bi0.5(Na0.8K0.2)0.5TiO3 thin films

Lead free Bi_0.5(Na_0.8K_0.2)_0.5TiO₃ thin films doped with BiFeO₃ (abbreviated as BNKT-xBFO) (x = 0, 0.02, 0.04, 0.08, 0.10) were deposited on Pt(111)/Ti/SiO₂/Si substrates by sol-gel/spin coating technique and the effects of BiFeO₃ content on the crystal structure and electrical properties were investigated in detail. The results showed that all the BNKT-xBFO thin films exhibited a single perovskite phase structure and high-dense surface. Reduced leakage current density, enhanced dielectric and ferroelectric properties were achieved at the optimal composition of BNKT-0.10BFO thin films, with a leakage current density, dielectric constant, dielectric loss and maximum polarization of < 2 × 10⁻⁴ A/cm³, ~ 978^, ~ 0.028 and ~ 74.13 μC/cm² at room temperature, respectively. Moreover, the BNKT-0.10BFO thin films possessed superior energy storage properties due to their slim P-E loops and large maximum polarization, with an energy storage density of 22.12 J/cm³ and an energy conversion efficiency of 60.85% under a relatively low electric field of 1200 kV/cm. Furthermore, the first half period of the BNKT-0.10BFO thin film capacitor was about 0.15 μs, during which most charges and energy were released. The large recoverable energy density and the fast discharge process indicated the potential application of the BNKT-0.10BFO thin films in electrostatic capacitors and embedded devices.     

Structural,Electrical, and Ferroelectric Properties of Nb‐Doped Na0.5Bi4.5Ti4O15 Thin Films

Ferroelectric Na_0.5Bi_4.5Ti₄O₁₅ (NaBTi) and donor Nb‐doped Na_0.5Bi_4.5Ti_3.94Nb_0.06O₁₅ (NaBTiNb) thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates using a chemical solution deposition method. The doping with Nb⁵⁺‐ions leads to tremendous improvements in the ferroelectric properties of the NaBTiNb thin film. Room‐temperature ferroelectricity with a large remnant polarization (2P_r) of 64.1 μC/cm² and a low coercive field (2E_c) of 165 kV/cm at an applied electric field of 475 kV/cm was observed for the NaBTiNb thin film. The polarization fatigue study revealed that the NaBTiNb thin film exhibited good fatigue endurance compared with the NaBTi thin film. Furthermore, the NaBTiNb thin film showed a low leakage current density, which was 1.48 × 10^?6 A/cm² at an applied electric field of 100 kV/cm.     

Ultra‐Low Temperature Sintering and Dielectric Properties of SiO2‐Filled Glass Composites

Ultra low temperature co‐fired ceramics system based on zinc borate 3ZnO–2B₂O₃ (3Z2B) glass matrix and SiO₂ filler was investigated with regard to the phase composition, the microstructure and the dielectric properties as functions of the filler content and sintering temperature. The softening temperature of 554°C and the crystallization temperature of around 650°C for the glass were confirmed by Differential Thermal Analysis result. The X‐ray diffraction results show that all SiO₂‐filled samples were made up of SiO₂, α‐Zn(BO₂)₂, Zn₃B₂O₆ phases. And there was no chemical reaction between SiO₂ and the glass during densification. And then the dielectric constant decreased with the increasing content of SiO₂. At the level of 15 wt% SiO₂ addition, the composites can be densified at a sintering temperature of 650°C for 30 min, and showed the optimal dielectric properties at 1 MHz with the dielectric constant of 6.1 and the dielectric loss of 1.3 × 10^?3, which demonstrates a good potential for use in LTCC technology.     

Microstructures and Microwave Dielectric Properties of Bi2O3‐Deficient Bi12SiO20 Ceramics

The Microstructure and microwave dielectric properties of Bi₂O₃‐deficient Bi₁₂SiO₂₀ ceramics were investigated. A small amount of unreacted Bi₂O₃ phase melted during sintering at 825°C and assisted with densification and grain growth in all samples. The melted Bi₂O₃ reacted with remnant SiO₂ during cooling to form a Bi₄Si₃O₁₂ secondary phase. The nominal composition of Bi_11.8SiO_19.7 ceramics sintered at 825°C for 4 h had a high relative density of 97% of the theoretical density, and good microwave dielectric properties: ε_r = 39, Q × f = 74 000 GHz, and τ_f = ?14.1 ppm/°C. Moreover, this ceramic did not react with Ag at 825°C.     

Electrical properties of nanoporous F doped SiO2 low-k thin films prepared by sol-gel method with catalyst HF

Using hydrofluoric acid as acid catalyst, F doped nanoporous low-k SiO₂ thin films were prepared through sol-gel method. Compared with the hydrochloric acid catalyzed film, the films showed better micro structural and electrical properties. The capacitance-voltage and current-voltage characteristics of F doped SiO₂ thin films were then studied based on the structures of metal-SiO₂-semiconductor and metal-SiO₂-metal, respectively. The density of state (DOS) of samples deposited on metal is found to decrease to a level of 2 × 10¹⁷ eV^?1 cm^?3. The values of mobile ions, fix positive charges, trapped charges and the interface state density between the SiO₂/Si interfaces also decrease obviously, together with the reduction of the leakage current density and the dielectric constant, which imply the improvement of the electrical properties of thin films. After annealing at a temperature of 450^°C, the lower values of the leakage current density and dielectric constant could be obtained, i.e. 1.06 × 10^?9 A/cm² and 1.5, respectively.     

Thickness Dependence of Dielectric,Leakage, and Ferroelectric Properties of Bi6Fe2Ti3O18 Thin Films Derived by Chemical Solution Deposition

We prepared Bi₆Fe₂Ti₃O₁₈ thin films on Pt/Ti/SiO₂/Si substrates with thickness ranging from ～300 to ～900 nm by using a chemical solution deposition route and investigated the thickness effects on the microstructure, dielectric, leakage, and ferroelectric properties of Bi₆Fe₂Ti₃O₁₈ thin films. Increasing thickness improves the surface morphology, dielectric, and leakage properties of Bi₆Fe₂Ti₃O₁₈ thin films and a well‐defined ferroelectric hysteresis loops can form for the thin films with the thickness above 400 nm. Moreover, the thickness dependence of saturation polarization is insignificant, whereas the remnant polarization decreases slightly with increasing thickness and it possesses a maximal value of ～20 μC/cm² for the 500 nm‐thick thin films. The mechanisms of the thickness dependence of microstructure, dielectric, and ferroelectric properties are discussed in detail. The results will provide a guidance to optimize the ferroelectric properties in Bi₆Fe₂Ti₃O₁₈ thin films by chemical solution deposition, which is important to further explore single‐phase multiferroics in the n = 5 Aurivillius thin films.     

Dielectric properties of sol–gel derived CaCu3Ti4O12 thin films onto Pt/TiO2/Si(1 0 0) substrates

The ultrahigh relative dielectric constant (K′) values reported for the CaCu₃Ti₄O₁₂ bulk ceramics (10⁴ at RT) joined to their low thermal dependence, no phase transitions are expected between −173 and 330 °C, make this material very promising for capacitor applications and certainly for microelectronics. The interest in the preparation of this material in thin film form is twofold, the understanding of its physical properties and the integration of this high K′ oxide with the Si technology. In this work, the preparation of CCTO thin films onto Pt/TiO₂/SiO₂/Si(1 0 0) substrates is attempted using sol–gel processing and rapid thermal processing (RTP) at 650 °C. Structural, microstructural and dielectric characterization of the films is performed. The results are commented and discussed on the light of the grain boundary effect on the dielectric constant and the possibility of application of these thin films in microelectronic devices.     

Low Dielectric Loss and Good Dielectric Thermal Stability of xNd(Zn1/2Ti1/2)O3–(1−x)Ba0.6Sr0.4TiO3 Thin Films Fabricated by Sol–Gel Method

xNd(Zn_1/2Ti_1/2)O₃–(1?x)Ba_0.6Sr_0.4TiO₃ (xNZT–BST) thin films were fabricated on Pt/Ti/SiO₂/Si substrates by sol–gel method with x = 0, 3%, 6%, and 10%. The structures, surface morphology, dielectric and ferroelectric properties, and thermal stability of xNZT–BST thin films were investigated as a function of NZT content. It was observed that the introduction of NZT into BST decreased grain size, dielectric constant, ferroelectricity, tunability, and significantly improved dielectric loss and dielectric thermal stability. The corresponding reasons were discussed. The 10%NZT–BST thin film exhibited the least dielectric loss of 0.005 and the lowest temperature coefficient of permittivity (TCP) of 3.2 × 10^?3/°C. In addition, the figure of merit (FOM) of xNZT–BST (x = 3%, 6%, and 10%) films was higher than that of pure BST film. Our results showed that the introduction of appropriate NZT into BST could modify the dielectric quality of BST thin films with good thermal stability. Especially for the 3%NZT–BST thin film, it showed the highest FOM of 33.58 for its appropriate tunability of 32.87% and low dielectric loss of 0.0098.     

Green Up‐Conversion Photoluminescence and Dielectric Relaxation of Ho3+/Yb3+‐Codoped Bi2Ti2O7 Pyrochlore Thin Films

Ho³⁺/Yb³⁺‐codoped Bi₂Ti₂O₇ pyrochlore thin films were prepared by a chemical solution deposition method, and their visible up‐conversion (UC) photoluminescence and dielectric relaxation were studied. Ho and Yb can be doped into Bi₂Ti₂O₇ lattice and single pyrochlore phase is maintained. Intense visible UC photoluminescence can be observed under the excitation of a 980‐nm diode laser. Two UC emission bands centered at 551 nm and 665 nm in the spectra can be assigned to ⁵F₄, ⁵S₂→⁵I₈ and ⁵F₅→⁵I₈ transitions of Ho³⁺ ions, respectively. The dependence of their UC emission intensity on pumping power indicates that both the green and red emissions of the thin films are two‐photon process. In addition, a Stokes near‐infrared emission centered at 1200 nm can be detected, which is due to ⁵I₆→⁵I₈ transition of Ho³⁺ ions. The thin films prepared on indium tin oxide–coated glass substrates exhibit a relatively high dielectric constant and a low dielectric loss as well as a good bias voltage stability. The dielectric relaxation of the thin films was also analyzed based on the temperature‐ and frequency‐dependent dielectric properties. This study suggests that Ho³⁺/Yb³⁺‐codoped Bi₂Ti₂O₇ thin films are promising materials for developing multifunctional optoelectronic thin film devices.     

Annealing temperature-dependent structural and electrical properties of (Ta2O5)1-x - (TiO2)x thin films,x ≤ 0.11

(Ta₂O₅)_1-x- (TiO₂)_x (TTO_x) thin films, with x = 0, 0.03, 0.06, 0.08, and 0.11, were deposited using magnetron direct current (DC) sputtering method onto the P/boron-silicon (1 0 0) substrates by varying areas of Tantalum and Titanium metallic targets, in oxygen environment at ambient temperature. The as-deposited thin films were annealed at temperatures ranging from 500 to 800 °C. Generally, the formation of the Ta₂O₅ structure was observed from the X-ray diffraction measurements of the annealed films. The capacitance of prepared metal– oxide– semiconductor (MOS) structures of Ag/TTO_x/p-Si was measured at 1 MHz. The dielectric constant of the deposited films was observed altering with varying composition and annealing temperature, showing the highest value 71, at 1 MHz, for the TTO_x films, x = 0.06, annealed at 700 °C. With increasing annealing temperature, from 700 to 800 °C, the leakage current density was observed, generally decreasing, from 10^?5 to 10^?8 A cm^?2, for the prepared compositions. Among the prepared compositions, films with x = 0.06, annealed at 800 °C, having the observed value of dielectric constant 48, at 1 MHz; and the leakage current density 2.7 × 10^?8 A cm^?2, at the electric field of 3.5 × 10⁵ V cm^?1, show preferred potential as a dielectric for high-density silicon memory devices.     

Optical and Microwave Dielectric Properties of Phase Pure (K0.5Na0.5)NbO3 Thin Films Deposited by RF Magnetron Sputtering

(K_0.5Na_0.5)NbO₃ (KNN) thin films have been deposited onto Pt/Ti/SiO₂/Si and quartz substrates by RF magnetron sputtering. The films were deposited at 400°C with the variation in oxygen mixing percentage (OMP) ratio from 0% to 100% and annealed at 700°C in oxygen atmosphere. The crystallinity of the films is found to be increased with increased OMP. Dielectric properties of the films were examined over the frequency range from 1 kHz to 1 MHz and the temperature range of 30°C to 400°C. The Curie temperature of the films was found to be in the range 369°C–373°C. For the first time, the split postdielectric resonator (SPDR) method was used to measure the microwave (10–20 GHz) dielectric properties of KNN thin films. The optical properties of as‐deposited and annealed KNN thin films were investigated by means of transmittance spectra. The optical bandgap is calculated by using the Tauc relation, and found to be in the range 4.34–4.40 eV and 4.29–4.37 eV for the as‐deposited and annealed films, respectively. The refractive index (n_700nm) of the films found to be in the range 1.98–2.01 and 1.99–2.07 for as‐deposited and annealed films, respectively. The refractive index dispersion is analyzed by using Wemple–DiDomenico (W–D) single‐oscillator model. The effect of annealing and OMP on the refractive index, packing density and W–D parameters has been investigated. The average single oscillator energy (E_o) and dispersion energies (E_d) of the annealed KNN thin films are in the range of 6.17–7.16 eV and 18.77–22.19 eV, respectively. AC‐conductivity of the annealed films was analyzed by using double power law. Ag/KNN/Pt thin films followed the ohmic conduction (J ∝ E^α, where α ~1) and the low leakage current density obtained for the deposited at 100% O₂ is 3.14 × 10^?5 A/cm² at 50 kV/cm.     

Dielectric properties and electrical behaviors of tunable Bi1.5MgNb1.5O7 thin films

The Bi_1.5MgNb_1.5O₇ (BMN) thin films were prepared on Au-coated Si substrates by rf magnetron sputtering. We systematically investigated the structure, dielectric properties and voltage tunable property of the films with different annealing temperatures. The relationships of leakage current and breakdown bias field with annealing temperature were firstly studied and a possible explanation was proposed. The deposited BMN thin films had a cubic pyrochlore phase when annealed at 550 °C or higher. With the increasing of annealing temperature, the dielectric constant and tunability also went up. BMN thin films annealed at 750 °C exhibited moderate dielectric constant of 106 and low dielectric loss of 0.003–0.007 between 10 kHz and 10 MHz. The maximum tunability of 50% was achieved at a bias field of 2 MV/cm. However, thin films annealed at 750 °C had lower breakdown bias field and higher leakage current density than films annealed below 750 °C. The excellent physical and electrical properties make BMN thin films promising for potential tunable capacitor applications.     

CaCu3Ti4O12 ceramics from co-precipitation method: Dielectric properties of pellets and thick films

Dielectric properties of CaCu₃Ti₄O₁₂ (CCTO)-based ceramics and thick films (e ～50 μm) prepared from powders synthesized by a soft chemistry method (co-precipitation) are presented and discussed. The characteristics of pellets and thick films are compared.The pellets exhibit high values of the dielectric permittivity (?_r ～1.4 × 10⁵) and relatively small dielectric losses (tan δ ～0.16) at 1 kHz and room temperature. These properties are independent of the nature of the metallization of the electrodes. In addition, the dielectric permittivity decreases when the diameter of the electrodes of the pellets increases, while the losses remain constant. This result, which is strongly related to the nature of the dielectric material in between the electrodes, constitutes a strong indication that the high dielectric permittivity values observed in this material are not related to an interfacial (electrode material) related mechanism but is an internal barrier layer capacitor (IBLC) type.Very high values of the dielectric permittivity of CCTO thick films are measured (?_r ～5 × 10⁴). The differences in dielectric permittivity between thick films and dense pellets may be attributed to the difference in grain size due to different CuO contents, and to the different reactivity of the materials.     

Color‐Tunable Up‐Conversion Emission and Infrared Photoluminescence and Dielectric Relaxation of Er3+/Yb3+ Co‐Doped Bi2Ti2O7 Pyrochlore Thin Films

The color‐tunable up‐conversion (UC) emission and infrared photoluminescence and dielectric relaxation of Er³⁺/Yb³⁺ co‐doped Bi₂Ti₂O₇ pyrochlore thin films prepared by a chemical solution deposition method have been investigated. The pyrochlore phase structure of Bi₂Ti₂O₇ can be stabilized by Er³⁺/Yb³⁺ co‐doping. Intense color‐tunable UC emission and infrared photoluminescence can be detected on the thin films excited by a 980 nm diode laser. Two UC emission bands centered at 548 and 660 nm in the spectra can be assigned to ²H_11/2, ⁴S_3/2 → ⁴I_15/2 and ⁴F_9/2 → ⁴I_15/2 transitions of Er³⁺ ions, respectively. A Stokes infrared emission centered at 1530 nm is due to ⁴I_13/2 → ⁴I_15/2 transition of Er³⁺ ions. The dependence of UC emission intensity on pumping power indicates that the UC emission of the thin films is a two‐photon process. The thin films also exhibit a relatively high dielectric constant and a low dissipation factor as well as a good bias voltage stability. Temperature‐ and frequency‐dependent dielectric relaxation has been confirmed. This study suggests that Er³⁺/Yb³⁺ co‐doped Bi₂Ti₂O₇ thin films can be applied to new multifunctional photoluminescence dielectric thin‐film devices.