半导体激光器速率方程组小信号近似的补充说明

有两种不同的微小调制（增益调制和损耗调制）情况下，讨论了用小信号控心于速率方程组的可行性。结果表明，小信号近似这一处理方法的有效性因引起系统变化的原因不同而不同，仅用初始扰动量的相对大小作为判断能求全责备 小信号近似的依据是不够的。个体地说，在损耗调制的情况下，系统变化前后的阈值载流子密度不同，此时小信号的近似分析可能会失效，因而使用时需慎重。     

高阶色散下与扰动频率相关的调制不稳定性

对包含损耗、二至四阶色散下两光波扰动频率相等与不等的情况,分析了光纤不同色散区的交叉相位调制不稳定性条件和增益谱.结果表明:三阶色散对交叉相位调制不稳定条件和增益谱无影响,但对扰动的有效波数有贡献;四阶色散的存在,使得二、四阶色散皆同号时的不稳定性比只有二阶色散的情形多出了远离零点的额外谱区,随两扰动的频率大小关系不同,该额外谱区可能由紧挨的2个小谱区构成,也可能只是单一的谱区;增益谱两大区域的谱宽和峰值也会随两扰动频率的不同而发生变化;四阶色散的存在还使两光波的二阶色散异号时的不稳定性出现了远离零点的增益谱.     

基于光注入半导体激光器的超宽带信号产生

提出一种基于光脉冲注入条件下半导体激光器腔 内交叉增益调制(XGM)效应的超宽带(UWB)信号产生方案,通过一个增益开关激光器(ML)、 一个半导体激光器(SL)和一个光带通滤波器(OBPF),在平衡探 测器(BPD)端口直接检测输出重复频率为2.5GHz的UWB一阶微分(Mo nocycle)和二阶微分(Doublet)信号, 而且通过引入马赫-曾德尔调制器(MZM),还可对产生的UWB信号实现开关键控(OOK)。 对所提系统 进行了全面的系统仿真分析,并进行了实验验证,实现了上述各种条件的UWB信号产生,并 实现了UWB信 号的40km光纤传输实验。实验结果表明:该方案获得的UWB信号的频 谱与美国联邦通信委员会(FCC)定制的EIRP标准吻合,同时经过调制的 UWB信号的波形经40km光纤传输之后基本保持不变。为了证明本文方 法产生的UWB信号的重复变化特点,还产生了频率为3.75GHz的UWB信 号。     

基于半导体光放大器交叉增益调制效应的主动锁模光纤激光器

提出一种腔内损耗小的基于半导体光放大器(SOA)交叉增益调制效应(XGM)的主动锁模光纤激光器结构。使用光环行器成功减小了激光器的腔内损耗,提高了激光器的输出功率。从理论上对有理数谐波锁模过程中腔内脉冲复合的物理机制进行了详细分析。利用有理数谐波锁模技术,在调制频率为10 GHz下,得到了重复频率为30 GHz的皮秒级光脉冲序列输出,其峰值功率约0.5 mW。由于半导体光放大器的宽增益谱与滤波器的较大可调谐范围,使得激光器输出可以在较大的波长可调谐范围内保持较大功率输出。成功实现了调制频率为20 GHz的谐波锁模短光脉冲输出,可调谐范围达40 nm,峰值功率大于0.65 mW。半导体光放大器和激光器的短腔长保证了激光器的长期稳定性。     

色散缓变光纤中五阶非线性调制不稳定性

在三五阶非线性共存时,研究了有损耗单模光纤中基于两光波交叉相位调制的不稳定条件和增益谱.在色散缓变光纤正色散区,分析了五阶非线性系数、色散纵向变化参量以及两扰动的频率大小关系对交叉相位调制不稳定增益谱的影响.结果表明,在五阶非线性下,色散的纵向渐减仍有利于展宽调制不稳定增益谱;正五阶非线性可使增益谱的谱宽和谱峰值增大,并使谱峰位置远离主波频率,负五阶非线性的作用则相反;两扰动频率大小关系不同,色散纵向参量的变化对增益谱的谱峰大小和位置的影响也不同,五阶非线性对交叉相位调制不稳定性的加强或抑制程度也不同.     

三、五阶非线性光纤中的交叉相位调制非稳研究

从五阶感应电极化强度出发，导出了有损耗单模光纤中同偏振、不同波长的两光波交叉相位调制情况下的五阶非线性折射率；在同时考虑三、五阶非线性的情况下，推导了两光波的慢变振幅满足的耦合非线性薛定谔方程组，并进一步得出了线性化后微扰满足的方程组。分析了三、五阶非线性共存时的交叉相位调制不稳定条件和增益谱。结果表明，与只有三阶非线性的情形相比，在三、五阶非线性共存时，正五阶非线性加强调制不稳定性，使增益谱变宽，峰值变大，负五阶非线性则减弱调制不稳定性；和只有三阶非线性的情况类似，损耗也会使不稳定增益谱的谱宽变窄，谱峰减小；两光波扰动频率的大小关系会影响不稳定增益谱的谱宽、峰值和形状。     

宽发光截面半导体激光器的光束质量研究

本文通过二阶矩法,分析了二维增益调制对于宽发光截面半导体激光器(BAL)的光束质量改善效果。光束质量是激光器工业应用中需要考虑的重要因素。BAL可以提供更大的输出功率,但其光束质量较常规半导体激光器差。本文测量了经过二维增益调制后的BAL。结果与未经过调制的BAL进行了比较。结果表明,经过二维增益调制后的BAL具有较高的阈值和较低的斜率效率,光束质量提高了20%。     

谐波锁模SOA光纤环形激光器的改进方案及其数值研究

对谐波锁模半导体光放大器(SOA)光纤环形激光器的工作条件提出改进,并采用自再现理论对其进行了数值研究.数值结果表明:激光器在新的工作条件下,即调制SOA被高直流偏置,对自发辐射信号进行调制并提供锁模脉冲克服腔损耗所需的增益,而此时的增益SOA被低直流偏置充当增益补偿器,输出的锁模脉冲质量显著提高.     

单模半导体激光器的非线性失真特性的电路模拟

本文提出了一种基于小信号等效电路的半导体激光器非线性电路模型，该模型使激光顺的调制响应和非线性特性以及其它相关电子电路的非线性特性可统一地通过通用电路分析软件来分析和计算。运用此模型对一单模激光器的二阶谐波与三阶交调失真特性进行了分析，结果与已报道的理论和实验结果一致。     

增益非线性参数对半导体激光器调制特性的影响

本文用小信号分析法建立了半导体激光器调制的数学模拟，用这个模型研究了增益与载流子密度的非线性依赖关系对半导体激光器的功率调制、波长调制和ＣＰＲ值的影响。     

1047 nm laser diode master oscillator Nd:YLF power amplifier laser system

A master oscillator power amplifier (MOPA) laser transmitter system at 1047 nm wavelength using a semiconductor laser diode and a diode pumped solid state (Nd:YLF) laser (DPSSL) amplifier is described. A small signal gain of 23 dB, a near diffraction limited beam, l Gbit/s modulation rates and >0.6 W average power are achieved. This MOPA laser has the advantage of amplifying the modulation signal from the laser diode master oscillator (MO) with no signal degradation.<>     

Bandwidth-limited picosecond pulse generation by hybrid mode-locking in a ring cavity GaAlAs laser

Bandwidth-limited picosecond pulses have been obtained using hybrid active/passive mode-locking in an external cavity semiconductor diode ring laser. Active mode-locking by application of sinusoidal RF modulation at the cavity round-trip frequency to a diode laser providing gain is supplemented by passive mode-locking in a second laser which is biased to provide saturable loss. Simultaneous streak camera and scanning Fabry-Perot interferometer measurements show that bandwidth-limited pulses of 25 Ps duration are obtained. Operation is not limited to near laser threshold, and frequency detuning sensitivity is improved when compared to the case of purely active mode-locking.     

Tuning range and spectral selectivity of the distributed forwardcoupled (DFC) laser

The tuning performance and spectral filtering mechanism in the distributed forward-coupled (DFC) laser diode are investigated. This widely tunable device is based on codirectional mode coupling along the entire laser length by a gain/loss grating perturbation. Due to the transverse integration, even rather short (L≈300-600 μm) DFC lasers may achieve side-mode suppression superior to that of previous codirectionally coupled devices over similar tuning ranges. Model calculations yield a tuning range above 100 nm at 1.5-μm wavelength with a side-mode suppression ratio around 30 dB     

Finite element analysis for lossy optical waveguides by usingperturbation techniques

A finite element analysis, based on the variational procedure, is used to find the modal loss or gain for both the TE and TM modes with the application of the perturbation technique. Results for the modal gain for the buried heterostructure diode laser are presented, as well as the loss estimation for both the TE and TM modes for the asymmetrical multilayer metal-clad planar optical waveguides. The results obtained agree very well, for a wide range of loss/gain values, with the previously published work using alternative approaches     

Systematic Study of the Effects of Modulation p-Doping on 1.3-μm Quantum-Dot Lasers

The effects of modulation p-doping on 1.3-mum InGaAs-InAs quantum-dot (QD) lasers are systematically investigated using a series of wafers with doping levels from 0 to 18 acceptors per QD. Various characterization techniques for both laser diodes and surface-emitting light-emitting diode structures are employed. We report: 1) how the level of modulation p-doping alters the length dependant laser characteristics (in turn providing insight on various key parameters); 2) the effect of modulation p-doping on the temperature dependence of a number of factors and its role in obtaining an infinite T₀; 3) how increasing concentrations of modulation p-doping affects the saturated gain, differential gain, and gain profile of the lasers; and finally, 4) the effect modulation p-doping has on the small signal modulation properties of 1.3-mum QD lasers. In each of these areas, the role of modulation p-doping is established and critically discussed.     

The frequency chirp of current modulated semiconductor diode lasers

Wavelength modulation or frequency chirp accompanies the power modulation of current modulated semiconductor diode lasers. Standard diode laser theory predicts that the laser gain and wavelength are clamped for modulation frequencies well below the relaxation oscillation frequency (except at frequencies so low that temperature modulation in the laser induces wavelength modulation). The wavelength clamping is not observed in experiments. We show that straightforward analysis of the wave equation for the laser waveguide can re-solve this discrepancy.     

Sequential TE/TM polarization emission from a tunable externalcavity diode laser

A tunable external cavity diode laser that emits in a closely spaced sequence of alternating TE and TM wavelength intervals in the range between 1256 and 1282 nm is reported. In each interval, stable single longitudinal mode TE and then TM emission occurs that can be tuned in wavelength. Two consecutive intervals are separated by a wavelength region where emission instabilities are observed. The wavelength spacing between two successive intervals belonging to the same polarization state corresponds to the mode spacing of the solitary diode laser. As the laser is tuned beyond 1282 nm and up to 1316 nm, the emitted radiation is only TM polarized. The above-mentioned phenomena are based on the composite cavity gain modulation with the wavelength, and on the comparable losses of the system for the TE and TM polarization     

1.06μm注入锁定增益开关半导体激光器特性分析与功率放大研究

报道了1.06 m增益开关半导体激光器的详细特性分析和功率放大研究。用高频正弦信号调制中心波长1.06 m的F-P腔半导体激光器得到脉宽约为100 ps、平均功率约为20 mW,重频从500 MHz到2 GHz连续可调的稳定短脉冲激光输出。采用注入锁定改善增益开关半导体激光器的输出特性。研究和分析了调制信号的频率、功率和偏置电流的大小以及注入锁定的功率、温度对激光器输出特性的影响。将该激光器作为种子,用108 W的抽运光进行两级全光纤功率放大得到了82 W的高功率输出,光光转换效率达到76%。