Atomic Structure and Electrical Activity of Grain Boundaries and Ruddlesden–Popper Faults in Cesium Lead Bromide Perovskite

To evaluate the role of planar defects in lead‐halide perovskites—cheap, versatile semiconducting materials—it is critical to examine their structure, including defects, at the atomic scale and develop a detailed understanding of their impact on electronic properties. In this study, postsynthesis nanocrystal fusion, aberration‐corrected scanning transmission electron microscopy, and first‐principles calculations are combined to study the nature of different planar defects formed in CsPbBr₃ nanocrystals. Two types of prevalent planar defects from atomic resolution imaging are observed: previously unreported Br‐rich [001](210)∑5 grain boundaries (GBs) and Ruddlesden–Popper (RP) planar faults. The first‐principles calculations reveal that neither of these planar faults induce deep defect levels, but their Br‐deficient counterparts do. It is found that the ∑5 GB repels electrons and attracts holes, similar to an n–p–n junction, and the RP planar defects repel both electrons and holes, similar to a semiconductor–insulator–semiconductor junction. Finally, the potential applications of these findings and their implications to understand the planar defects in organic–inorganic lead‐halide perovskites that have led to solar cells with extremely high photoconversion efficiencies are discussed.     

Stability of perovskite materials and devices

Due to the excellent optoelectronic properties, organic–inorganic perovskites have drawn much attention and have been applied in different electronics with remarkable performance. However, the poor stability creates a massive barrier for the commercialization of perovskite electronic devices. In this review, we discuss intrinsic and extrinsic factors causing instabilities of perovskites and perovskite devices such as solar cells, liquid crystal displays (LCDs), light emitting diodes (LEDs), ionizing radiation detectors, transistors, memristors and sensors. We further review the stabilization approaches, including composition engineering, adoption of lower dimensional compositions, quantum dots, interface engineering, defects engineering and so on.     

Formation Energy Profiles of Oxygen Vacancies at Grain Boundaries in Perovskite-Type Electroceramics

Oxygen vacancy formation energies play a major role in the electric field-assisted abnormal grain growth of technologically relevant polycrystalline perovskite phases. The underlying effect on the atomic scale is assumed to be a redistribution of cationic and anionic point defects between grain boundaries (GBs) and the bulk interior regions of the grains due to different defect formation energies in the structurally different regions, accompanied by the formation of space charge zones. Using atomistic calculations based on classical interatomic potentials, optimized structures of the symmetric tilt GBs Σ5(210)[001] and Σ5(310)[001], and of the asymmetric tilt GB (430)[001]||(100)[001] in the electroceramic perovskite materials SrTiO₃, BaTiO₃, and BaZrO₃, are derived and discussed. Profiles of oxygen vacancy formation energies across those GBs are presented and their dependence on composition and GB type is discussed.     

Realizing Reduced Imperfections via Quantum Dots Interdiffusion in High Efficiency Perovskite Solar Cells

Realization of reduced ionic (cationic and anionic) defects at the surface and grain boundaries (GBs) of perovskite films is vital to boost the power conversion efficiency of organic–inorganic halide perovskite (OIHP) solar cells. Although numerous strategies have been developed, effective passivation still remains a great challenge due to the complexity and diversity of these defects. Herein, a solid-state interdiffusion process using multi-cation hybrid halide perovskite quantum dots (QDs) is introduced as a strategy to heal the ionic defects at the surface and GBs. It is found that the solid-state interdiffusion process leads to a reduction in OIHP shallow defects. In addition, Cs⁺ distribution in QDs greatly influences the effectiveness of ionic defect passivation with significant enhancement to all photovoltaic performance characteristics observed on treating the solar cells with Cs_0.05(MA_0.17FA_0.83)_0.95PbBr₃ (abbreviated as QDs-Cs5). This enables power conversion efficiency (PCE) exceeding 21% to be achieved with more than 90% of its initial PCE retained on exposure to continuous illumination of more than 550 h.     

Strain-induced conductance modulation in graphene grain boundary

Grain boundaries (GBs) are ubiquitous in polycrystalline graphene materials obtained by various growth methods. It has been shown previously that considerable electrical transport gap can be opened by grain boundaries. On the other hand, polycrystalline graphene with GBs is an atomically thin membrane that can sustain extraordinary amount of strain. Here, by using atomistic quantum transport numerical simulations, we examine modulation of electrical transport properties of graphene GBs. The results indicate the modulation of transport gap and electrical conductance strongly depends on the topological structure of the GB. The transport gap of certain GBs can be significantly widened by strain, which is useful for improving the on-off ratio in potential transistor applications and for applications as monolayer strain sensors.     

Interface and Defect Engineering for Metal Halide Perovskite Optoelectronic Devices

Metal halide perovskites have been in the limelight in recent years due to their enormous potential for use in optoelectronic devices, owing to their unique combination of properties, such as high absorption coefficient, long charge‐carrier diffusion lengths, and high defect tolerance. Perovskite‐based solar cells and light‐emitting diodes (LEDs) have achieved remarkable breakthroughs in a comparatively short amount of time. As of writing, a certified power conversion efficiency of 22.7% and an external quantum efficiency of over 10% have been achieved for perovskite solar cells and LEDs, respectively. Interfaces and defects have a critical influence on the properties and operational stability of metal halide perovskite optoelectronic devices. Therefore, interface and defect engineering are crucial to control the behavior of the charge carriers and to grow high quality, defect‐free perovskite crystals. Herein, a comprehensive review of various strategies that attempt to modify the interfacial characteristics, control the crystal growth, and understand the defect physics in metal halide perovskites, for both solar cell and LED applications, is presented. Lastly, based on the latest advances and breakthroughs, perspectives and possible directions forward in a bid to transcend what has already been achieved in this vast field of metal halide perovskite optoelectronic devices are discussed.     

Local migration of grain boundaries in polycrystalline materials under plastic deformation conditions

We propose a theoretical model describing the local migration of grain boundaries (GBs) near triple junctions according to the new mechanism stimulated by the GB slip. Within the framework of this model, a driving force for the local migration is due to the interaction between sliding and structural GB dislocations responsible for the GB slip and misorientation, respectively.     

Coordinated grain boundary deformation governed nanograin annihilation in shear cycling

Grain growth and shrinkage are essential to the thermal and mechanical stability of nanocrystalline metals,which are assumed to be governed by the coordinated deformation between neighboring grain boundaries(GBs)in the nanosized grains.However,the dynamics of such coordination has rarely been reported,especially in experiments.In this work,we systematically investigate the atomistic mechanism of coordinated GB deformation during grain shrinkage in an Au nanocrystal film through combined state-of-the-art in situ shear testing and atomistic simulations.We demonstrate that an embedded nanograin experiences shrinkage and eventually annihilation during a typical shear loading cycle.The continu-ous grain shrinkage is accommodated by the coordinated evolution of the surrounding GB network via dislocation-mediated migration,while the final grain annihilation proceeds through the sequen-tial dislocation-annihilation-induced grain rotation and merging of opposite GBs.Both experiments and simulations show that stress distribution and GB structure play important roles in the coordinated defor-mation of different GBs and control the grain shrinkage/annihilation under shear loading.Our findings establish a mechanistic relation between coordinated GB deformation and grain shrinkage,which reveals a general deformation phenomenon in nanocrystalline metals and enriches our understanding on the atomistic origin of structural stability in nanocrystalline metals under mechanical loading.     

The nature of strength enhancement and weakening by pentagon-heptagon defects in graphene

The two-dimensional crystalline structures in graphene challenge the applicability of existing theories that have been used for characterizing its three-dimensional counterparts. It is crucial to establish reliable structure-property relationships in the important two-dimensional crystals to fully use their remarkable properties. With the success in synthesizing large-area polycrystalline graphene, understanding how grain boundaries (GBs) in graphene alter its physical properties is of both scientific and technological importance. A recent work showed that more GB defects could counter intuitively give rise to higher strength in tilt GBs (ref. 10). We show here that GB strength can either increase or decrease with the tilt, and the behaviour can be explained well by continuum mechanics. It is not just the density of defects that affects the mechanical properties, but the detailed arrangements of defects are also important. The strengths of tilt GBs increase as the square of the tilt angles if pentagon-heptagon defects are evenly spaced, and the trend breaks down in other cases. We find that mechanical failure always starts from the bond shared by hexagon-heptagon rings. Our present work provides fundamental guidance towards understanding how defects interact in two-dimensional crystals, which is important for using high-strength and stretchable graphene for biological and electronic applications.     

Wetting and premelting of triple junctions and grain boundaries in the Al–Zn alloys

Phase transitions in grain boundaries (GBs) and GB triple junctions (TJs) can change drastically the properties of polycrystals. The GB and TJ wetting phase transition can occur in the two-phase area of the bulk phase diagram where the liquid and solid phases are in equilibrium. The GB and TJ wetting tie-lines can continue in one-phase area of the bulk phase diagram as a GB or TJ solidus line. This line represents the GB or TJ premelting phase transition. The structure and composition of grain boundaries and GB triple junctions were studied by high-resolution electron microscopy and analytical transmission electron microscopy in the Al–5 at.% Zn polycrystals and by differential scanning calorimetry (DSC) in the Al–7.5 at.% Zn polycrystals. Between bulk solidus and GB or TJ solidus the metastable Zn-rich β_m-phase was observed in the GB triple junctions of quenched samples. This phase appears neither in the samples annealed above the bulk solidus nor in those annealed below the GB solidus. Zn-content in this β_m-phase corresponds to that of bulk liquidus. This is a structural indication that if the melt wets the GBs or TJs, the GB (or TJ) solidus line appears in the bulk phase diagram, and the liquid-like phase exists in GBs and TJs between bulk solidus and GB (or TJ) solidus lines. The structural observation of this phase is also supported by our data obtained by means of DSC.     

Stable High‐Performance Perovskite Solar Cells via Grain Boundary Passivation

The trap states at grain boundaries (GBs) within polycrystalline perovskite films deteriorate their optoelectronic properties, making GB engineering particularly important for stable high‐performance optoelectronic devices. It is demonstrated that trap states within bulk films can be effectively passivated by semiconducting molecules with Lewis acid or base functional groups. The perovskite crystallization kinetics are studied using in situ synchrotron‐based grazing‐incidence X‐ray scattering to explore the film formation mechanism. A model of the passivation mechanism is proposed to understand how the molecules simultaneously passivate the Pb–I antisite defects and vacancies created by under‐coordinated Pb atoms. In addition, it also explains how the energy offset between the semiconducting molecules and the perovskite influences trap states and intergrain carrier transport. The superior optoelectronic properties are attained by optimizing the molecular passivation treatments. These benefits are translated into significant enhancements of the power conversion efficiencies to 19.3%, as well as improved environmental and thermal stability of solar cells. The passivated devices without encapsulation degrade only by ≈13% after 40 d of exposure in 50% relative humidity at room temperature, and only ≈10% after 24 h at 80 °C in controlled environment.     

Grain‐Boundary “Patches” by In Situ Conversion to Enhance Perovskite Solar Cells Stability

The power conversion efficiency of organic–inorganic hybrid perovskite solar cells has increased rapidly, but the device stability remains a big challenge. Previous studies show the grain boundary (GB) can facilitate ion migration and initiate device degradation. Herein, methimazole (MMI) is employed for the first time to construct a surface “patch” by in situ converting residual PbI₂ at GBs. The resultant MMI–PbI₂ complex can effectively suppress ion migration and inhibit diffusion of the metal electrodes. The origin of the surface “patch” effect and their working mechanisms are investigated experimentally and theoretically at the microscopic level. It hence demonstrates a simple and effective method to prolong the device stability in the context of GB engineering, which could be extensively applied to perovskite‐based optoelectronics.     

Influence of grain boundary inclination on the grain boundary and triple junction motion in Zn

The experimental results of an investigation of the steady‐state motion of individual grain boundaries (GBs) of natural deformation twin and individual twin GBs in bicrystals and tricrystals with triple junction (TJ) are obtained. For experimental observation of GB mobility from the dependence on GB inclination the Zn specimens with individual GBs and TJs were produced. The mobility of natural deformation twin GBs and twin GBs in bicrystals and tricrystals are compared in connection with the GB inclination.     

2D Perovskites with Short Interlayer Distance for High‐Performance Solar Cell Application

2D perovskites have emerged as one of the most promising photovoltaic materials owing to their excellent stability compared with their 3D counterparts. However, in typical 2D perovskites, the highly conductive inorganic layers are isolated by large organic cations leading to quantum confinement and thus inferior electrical conductivity across layers. To address this issue, the large organic cations are replaced with small propane‐1,3‐diammonium (PDA) cations to reduce distance between the inorganic perovskite layers. As shown by optical characterizations, quantum confinement is no longer dominating in the PDA‐based 2D perovskites. This leads to considerable enhancement of charge transport as confirmed with electrochemical impedance spectroscopy, time‐resolved photoluminescence, and mobility measurements. The improved electric properties of the interlayer‐engineered 2D perovskites yield a power conversion efficiency of 13.0%. Furthermore, environmental stabilities of the PDA‐based 2D perovskites are improved. PDA‐based 2D perovskite solar cells (PSCs) with encapsulation can retain over 90% of their efficiency upon storage for over 1000 h, and PSCs without encapsulation can maintain their initial efficiency at 70 °C for over 100 h, which exhibit promising stabilities. These results reveal excellent optoelectronic properties and intrinsic stabilities of the layered perovskites with reduced interlayer distance.     

Inorganic and Layered Perovskites for Optoelectronic Devices

Organic–inorganic halide perovskites are making breakthroughs in a range of optoelectronic devices. Reports of >23% certified power conversion efficiency in photovoltaic devices, external quantum efficiency >21% in light‐emitting diodes (LEDs), continuous‐wave lasing and ultralow lasing thresholds in optically pumped lasers, and detectivity in photodetectors on a par with commercial GaAs rivals are being witnessed, making them the fastest ever emerging material technology. Still, questions on their toxicity and long‐term stability raise concerns toward their market entry. The intrinsic instability in these materials arises due to the organic cation, typically the volatile methylamine (MA), which contributes to hysteresis in the current–voltage characteristics and ion migration. Alternative inorganic substitutes to MA, such as cesium, and large organic cations that lead to a layered structure, enhance structural as well as device operational stability. These perovskites also provide a high exciton binding energy that is a prerequisite to enhance radiative emission yield in LEDs. The incorporation of inorganic and layered perovskites, in the form of polycrystalline films or as single‐crystalline nanostructure morphologies, is now leading to the demonstration of stable devices with excellent performance parameters. Herein, key developments made in various optoelectronic devices using these perovskites are summarized and an outlook toward stable yet efficient devices is presented.     

Multifunctional Charge Transporting Materials for Perovskite Light-Emitting Diodes

Despite their low exciton-binding energies, metal halide perovskites are extensively studied as light-emitting materials owing to narrow emission with high color purity, easy/wide color tunability, and high photoluminescence quantum yields. To improve the efficiency of perovskite light-emitting diodes (PeLEDs), much effort has been devoted to controlling the emitting layer morphologies to induce charge confinement and decrease the nonradiative recombination. The interfaces between the emitting layer and charge transporting layer (CTL) are vulnerable to various defects that deteriorate the efficiency and stability of the PeLEDs. Therefore, the establishment of multifunctional CTLs that can improve not only charge transport but also critical factors that influence device performance, such as defect passivation, morphology/phase control, ion migration suppression, and light outcoupling efficiency, are highly required. Herein, the fundamental limitations of perovskites as emitters (i.e., defects, morphological and phase instability, high refractive index with poor outcoupling) and the recent developments with regard to multifunctional CTLs to compensate such limitations are summarized, and their device applications are also reviewed. Finally, based on the importance of multifunctional CTLs, the outlook and research prospects of multifunctional CTLs for the further improvement of PeLEDs are discussed.     

Impurity and vacancy segregation at symmetric tilt grain boundaries in Y<Subscript>2</Subscript>O<Subscript>3</Subscript>-doped ZrO<Subscript>2</Subscript>

Segregation energies of impurity ions and oxygen vacancies at grain boundaries in Y₂O₃-doped ZrO₂ as calculated from atomistic simulations using energy minimization and Monte Carlo methods are reported. Based on these energies, local defect equilibrium concentrations have been estimated. It is found that it is more energetically favorable for an yttrium ion to be accompanied by an oxygen vacancy at grain boundaries, although decrease in energy when associated with an oxygen vacancy differs from boundary to boundary. The segregation energy for a neutral defect complex consisting of a two yttrium ions and an oxygen vacancy at infinitely dilute concentration is highly correlated with the coordination environment of each site in the vicinity of the grain boundary (GB), and, in turn, GB energy. Although the estimated local equilibrium concentrations of these defects are similar, detailed analysis of the atomic coordination and defect distributions in the vicinity of a GB reveal that defect distributions, especially of oxygen vacancies, are dependent on the characteristics of the particular GB and that segregation in effect reduces lattice strains at the GB. Equilibrium concentration distributions of yttrium at grain boundaries are also given as a function of spatial resolution, and are useful for interpretation of experimental results.     

Graded 2D/3D Perovskite Heterostructure for Efficient and Operationally Stable MA-Free Perovskite Solar Cells

Almost all highly efficient perovskite solar cells (PVSCs) with power conversion efficiencies (PCEs) of greater than 22% currently contain the thermally unstable methylammonium (MA) molecule. MA-free perovskites are an intrinsically more stable optoelectronic material for use in solar cells but compromise the performance of PVSCs with relatively large energy loss. Here, the open-circuit voltage (V_oc) deficit is circumvented by the incorporation of β-guanidinopropionic acid (β-GUA) molecules into an MA-free bulk perovskite, which facilitates the formation of quasi-2D structure with face-on orientation. The 2D/3D hybrid perovskites embed at the grain boundaries of the 3D bulk perovskites and are distributed through half the thickness of the film, which effectively passivates defects and minimizes energy loss of the PVSCs through reduced charge recombination rates and enhanced charge extraction efficiencies. A PCE of 22.2% (certified efficiency of 21.5%) is achieved and the operational stability of the MA-free PVSCs is improved.     

Structure and electronic properties of transition metal dichalcogenide MX2 (M = Mo,W, Nb; X = S,Se) monolayers with grain boundaries

Layered transition metal dichalcogenides with unique mechanical, electronic, optical, and chemical properties can be used for novel nanoelectronic and optoelectronic devices. Large-area monolayers synthesized using chemical vapor deposition are often polycrystals with many dislocations and grain boundaries (GBs). In the present paper, atomic structure and electronic properties of MX₂ (M = Mo, W, Nb; X = S, Se) with the GBs were investigated using first principles based on density functional theory. Simulation results revealed that the zigzag-oriented GBs (which consist of pentagon/heptagons (5-7) pairs) were more stable than the armchair-oriented GBs (which consist of pentagon/heptagons (5-7-5-7) pairs). The GBs induced defect levels are located within the band gap for the semiconductor materials of MX₂ (M = Mo, W; X = S, Se) monolayers, and the NbS₂ and NbSe₂ remained as metallic materials with GBs. Results provided a possible pathway to build these nano-layered materials into nanoelectronic devices.     

Phase transformations at interfaces: Observations from atomistic modeling

We review the recent progress in theoretical understanding and atomistic computer simulations of phase transformations in materials interfaces, focusing on grain boundaries (GBs) in metallic systems. Recently developed simulation approaches enable the search and structural characterization of GB phases in single-component metals and binary alloys, calculation of thermodynamic properties of individual GB phases, and modeling of the effect of the GB phase transformations on GB kinetics. Atomistic simulations demonstrate that the GB transformations can be induced by varying the temperature, loading the GB with point defects, or varying the amount of solute segregation. The atomic-level understanding obtained from such simulations can provide input for further development of thermodynamics theories and continuous models of interface phase transformations while simultaneously serving as a testing ground for validation of theories and models. They can also help interpret and guide experimental work in this field.