High-Temperature Failure Mechanisms of Hot-Pressed Si3N4 and Si3N4/Si3N4-Whisker-Reinforced Composites

The high-temperature flexural strength of hot-pressed silicon nitride (Si₃N₄) and Si₃N₄-whisker-reinforced Si₃N₄-matrix composites has been measured at a crosshead speed of 1.27 mm/min and temperatures up to 1400°C in a nitrogen atmosphere. Load–displacement curves for whisker-reinforced composites showed nonelastic fracture behavior at 1400°C. In contrast, such behavior was not observed for monolithic Si₃N₄. Microstructures of both materials have been examined by scanning and transmission electron microscopy. The results indicate that grain-boundary sliding could be responsible for strength degradation in both monolithic Si₃N₄ and its whisker composites. The origin of the nonelastic failure behavior of Si₃N₄-whisker composite at 1400°C was not positively identified but several possibilities are discussed.     

Comparison of the Reaction Systems ZrO2-Si3N4 and TiO2-Si3N4

Reaction mechanisms occurring in the systems ZrO2-Si₃N₄ and TiO2-Si₃N₄ have been compared. The thermodynamics of several overall reaction mechanisms have been analyzed, including the effects of the gas phase composition to determine the most energetically favorable course of each reaction .     

Reaction-Bonding Preparation of Si3N4/MoSi2 and Si3N4/WSi2 Composites from Elemental Powders

Si₃N₄/MoSi₂ and Si₃N₄/WSi₂ composites were prepared by reaction-bonding processes using as starting materials powder mixtures of Si-Mo and Si-W, respectively. A presintering step in an At-base atmosphere was used before nitriding for the formation of MoSi₂ and WSi₂; the nitridation in a N₂-base atmosphere was followed after presintering with the total stepwise cycle of 1350°C × 20 h +1400°C × 20 h +1450°C × 2 h. The final phases obtained in the two different composites were Si₃N₄ and MoSi₂ or WSi₂; no free elemental Si and Mo or W were detected by X-ray diffraction.     

Phase Equilibria in the System Si3N4-SiO2-BeO-Be3N2

The 1780°C isothermal section of the reciprocal quasiternary system Si₃N₄-SiO₂-BeO-Be₃N₂ was investigated by the X-ray analysis of hot-pressed samples. The equilibrium relations shown involve previously known compounds and 8 newly found compounds: Be₆Si³N₈, Be₁₁Si₅N₁₄, Be₅Si²N₆, Be₉Si₃N₁₀, Be₈SiO₄N₄, Be₆O₃N₂, Be₈O₅N₂, and Be₉O₆N₂. Large solid solubility occurs in β-Si₃N₄, BeSiN₂, Be₉Si₃N₁₀, Be₄SiN₄, and β-Be₃N₂. Solid solubility in β-Si₃N₄ extends toward Be₂SiO₄ and decreases with increasing temperature from 19 mol% at 1770°C to 11.5 mol% Be₂SiO₄ at 1880°C. A 4-phase isotherm, liquid +β-Si₃N₄ ( ss )Si₂ON₂+ BeO, exists at 1770°C.     

Hot Isostatic Pressing of Si3N4 Powder Compacts and Reaction-Bonded Si3N4

Hot isostatically pressed silicon nitride was produced by densifying Si₃N₄ powder compacts and reaction-bonded Si₃N₄ (RBSN) parts with yttria as a sintering additive. The microstructure was analyzed using scanning electron microscopy, X-ray diffraction, and density measurements. The influence of the microstructure on fracture strength, creep, and oxidation behavior was investigated. It is assumed that the higher amount of oxygen in the Si₃N₄ starting powder compared with the RBSN starting material leads to an increased amount of liquid phase during densification. This results in grain growth and in a larger amount of grain boundary phase in the hot isostatically pressed material. Compared with the hot isostatically pressed RBSN samples therefore, strength decreases whereas the creep rate and the weight gain during oxidation increase.     

Solubility of Si3N4 in Liquid SiO2

The nitrogen solubility in the SiO₂-rich liquid in the metastable binary SiO₂-Si₃N₄ system has been determined by analytical TEM to be 1%–4% of N/(O + N) at 1973–2223 K. Analysis of the near edge structure of the electron energy loss peak indicates that nitrogen is incorporated into the silicate network rather than being present as molecular N₂. A regular solution model with a positive enthalpy of mixing for the liquid was used to match the data for the metastable solubility of N in the presence of crystalline Si₃N₄ and to adjust the computed phase diagram. The solubility of Si₃N₄ in fused SiO₂ is far less than reported in liquid silicates also containing Al, Mg, and/or Y. Apparently, these cations act as modifiers that break anion bridges in the silicate network and, thereby, allow further incorporation of Si₃N₄ without prohibitive amounts of network cross-linking. Finally, indications emerged regarding the diffuse nature of the Si₃N₄-SiO₂ interface that leads to amorphous regions of higher N content.     

Effective Doping in Cubic Si3N4 and Ge3N4: A First-Principles Study

First-principles calculations have been conducted to investigate impurities in cubic Si₃N₄ and Ge₃N₄. Impurity species suitable for n - and p -type doping are suggested, in terms of the formation and ionization energies. The suggested species are P and O as n -type dopants and Al as a p -type dopant for c -Si₃N₄, and Sb and O as n -type dopants and Al as a p -type dopant for c -Ge₃N₄. The dependence of the formation energies on the chemical potentials indicates that a proper choice of growth conditions is mandatory for suppressing the incorporation of these impurities into anti and interstitial sites, where the impurities can be charged to compensate carriers.     

Densification of Si3N4 with LiYO2 Additive

This paper deals with the densification and phase transformation during pressureless sintering of Si₃N₄ with LiYO₂ as the sintering additive. The dilatometric shrinkage data show that the first Li₂O- rich liquid forms as low as 1250°C, resulting in a significant reduction of sintering temperature. On sintering at 1500°C the bulk density increases to more than 90% of the theoretical density with only minor phase transformation from α-Si₃N₄ to β-Si₃N₄ taking place. At 1600°C the secondary phase has been completely converted into a glassy phase and total conversion of α-Si₃N₄ to β-Si₃N₄ takes place. The grain growth is anisotropic, leading to a microstructure which has potential for enhanced fracture toughness. Li₂O evaporates during sintering. Thus, the liquid phase is transient and the final material might have promising mechanical properties as well as promising high-temperature properties despite the low sintering temperature. The results show that the Li₂O−Y₂O₃ system can provide very effective low-temperature sintering additives for silicon nitride.     

Properties of Si3N4 Produced by Nitriding Slip-Cast Si Containing Si3N4 Grog Additions

The properties of Si₃N₄ compositions produced by nitriding slip-cast Si bodies containing up to 16% Si₃N₄ grog were determined. The introduction of grog consistently lowered the densities, the room- and high-temperature strengths, and the resistance to oxidation. The open structure of the grog-containing mixes favored low-temperature gas-phase reactions leading to α-Si₃N₄ formation. In higher-density compositions containing predominantly Si, gas-liquid-solid reactions at higher temperatures produced a relatively greater content of the β phase.     

Comparison of Tribological Behavior Between α-Sialon/Si3N4 and Si3N4/Si3N4 Sliding Pairs in Water Lubrication

We report here the study on tribological behavior of α-Sialon in aqueous medium. The results derived from a wide range of test conditions are briefly discussed. A reduction in friction coefficient from 0.7 to 0.03 and a decrease in wear rate by two orders of magnitude were achieved under low load (9.8 N) and high speed (>0.54 m/s) conditions. The tribological behavior of α-Sialon/Si₃N₄ ceramics was then compared with Si₃N₄/Si₃N₄ tribopairs.     

Compressive Creep and Oxidation Resistance of an Si3N4 Material Fabricated in the System Si3N4-Si2N2O-Y2Si2O7

The compressive creep behavior and oxidation resistance of an Si₃N₄/Y₂Si₂O₇ material (0.85Si₃N₄+0.10SiO₂+0.05Y₂O₃) were determined at 1400°C. Creep re sistance was superior to that of other Si₃N₄ materials and was significantly in creased by a preoxidation treatment (1600°C /120 h). An apparent parabolic rate constant of 4.2 × 10⁻¹¹ kg²·m-⁴·s⁻¹ indicates excellent oxidation resistance.     

Hot-Pressing Behavior of Si3N4

The densification behavior of Si₃N₄ containing MgO was studied in detail. It was concluded that MgO forms a liquid phase (most likely a magnesium silicate). This liquid wets and allows atomic transfer of Si₃N₄. Evidence of a second-phase material between the Si₃N₄ grains was obtained through etching studies. Transformation of α- to β-Si₃N₄ during hot-pressing is not necessary for densification.     

Mineralizing Effect of Li2B4O7 and Na2B4O7 on Magnesium Aluminate Spinel Formation

Lithium borate (Li₂B₄O₇) and sodium borate (Na₂B₄O₇) mineralize spinel formation from stoichiometric MgO and Al₂O₃ between 1000° and 1100°C. Mineralization with both compounds is shown to be mediated by B-containing liquids which form glass on cooling. However, the liquid compositions depend on the type of mineralizer and temperature, suggesting that templated grain growth or dissolution–precipitation mechanisms are operating, one dominating over the other under certain conditions. Na₂B₄O₇-mineralized compositions show predominantly templated grain growth at 1000°C, which changes to dissolution–precipitation at 1100°C, whereas Li₂B₄O₇-mineralized compositions show dissolution–precipitation from 1000°C. Li₂B₄O₇ is a stronger mineralizer as spinel formation is complete with 3 wt% Li₂B₄O₇ at 1000°C and with ≥1.5 wt% addition at 1100°C, whereas Na₂B₄O₇-mineralized compositions are found to retain some unreacted corundum even at 1100°C.